Nanotechnology and Materials Technology

Conte nts

Int roduction

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Orga ni za tion of T his Brochure

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• Na not echnology P rogram Na not echnology Gl ass Project ················································································· 1 Na not echnology Metal Project

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Adva nced Na nocarbon Appl ication Project

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Na not echnology P art icle Project

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Na nostruct ure Coa ting Project

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Synt het ic Na nofunct ion Ma terials Project Na not echnology Material Metrology Project

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Project on Na nostruct ured P olymeri c Materials

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Adv anced N anofabrication Process Technology U sing Quantum Be ams Full color Rewr itabl e Paper U sing Functional Capsules Project Nanostructure Forming f or Cer amics Integration Project

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R&D of 3D NanoScal e Certified Reference Materia ls Project

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Adv anced Dia mond Dev ice Project ··········································································· 25 Carbon N anotube FED Project

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Hi ghly Funct ional Nanotechnology Gla ss Project for Photonic Devices Hi gh- St rength Nanotechnology Gla ss Project for D ispla ys

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• Innova tive Materials Devel opment Program Adva nced E valua tion Methods R esearch P roject for Na noscale S emiconduct ors ······················································································································· 33 • Program for F unda ment al Technologies Telecommunicat ions Equi pment and Devices Development of Phonic Network Technology

of

Adva nced

a nd

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Development of Hi ghly-C apacity Optical Storage Technology MEMS Project

Infor mation

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•Basic Technology Research Promotion Research on High-Resolution and High-Speed Composition Analysis of Nanometer-Thick Films Rugate Filters

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Development of Nanoparticle and Nano-Thin-Film Phosphors for FED Study of GaN on Si Power Devices

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Development of a Drug Delivery System Making Use of Biodegradable Nanocomposite Polymer Particles

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Development of Basic Technology for High Density Surface Mount Next-Generation Semiconductor Devices

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Advanced UV-B and C Optical Semiconductor Devices

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Development of Ultra-high-speed InP Epitaxial Crystal Manufacturing Technologies ······ 55 Functional Nanoprobes for Bioproperty Mapping

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Development of the World First Cathodluminescence and Raman Spectroscopic Systems Using a Near-field Spectroscopic Technique

Index of Key Words

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Introduction Nanotechnology is an advanced technology that has received a lot of attention for its ability to make use of the unique properties of nanosized materials. Nanotechnology is capable of manipulating and controlling material structures at the nano level (a nanometer is equal to one millionth of a millimeter) and offering unprecedented functions and excellent material properties. Nanotechnology consists of the “top-down approach” and the “bottom-up approach.” In the former approach, the sophistication of fine processing technologies, such as semiconductor manufacturing, can lead to the processing of nanosized fine structures. In the bottom-up approach, self-organization properties inherent in materials can be utilized to assemble nanosized fine structures from the atomic or moleculer levels. Nanotechnology, including nanostructured material metrology to accurately determine physical properties at the nanolevel, is considered a strategic technological area that goes beyond conventional technologies, potentially leading to a paradigm shift in new industrial technologies. The basic concept of nanotechnology first emerged half a century ago. Actual observation and manipulation of nanosized atoms became possible when scanning tunneling microscopes came into practical use in the first half of the 1980s. Since the United States launched its National Nanotechnology Initiative (NNI) in 2000 as a strategic governmental research program, global nanotechnology research and development investment has been on the rise. As stated in the “Science and Technology Basic Plan” (March 2001) and “Promotion Strategy of Prioritized Areas” (September 2001) of the Cabinet Office’s Council for Science and Technology Policy, Japan considers nanotechnology and nanomaterials to be key areas for the 21st century that will support a wide range of scientific and technological breakthroughs. Moreover, they are priority technologies essential to the sustainable development of economic society and enhancement of industrial competitiveness. Given their importance, the Japanese government has designated nanotechnology and materials as one of four priority areas for enhanced research and development over the next five years. NEDO, Japan's largest public R&D management organization for promoting advanced industrial technology development, has been carrying out various activities related to nanotechnology in recent years. Nanotechnology is indeed a key technology for innovative development in various industrial technologies, and it is expected to contribute to significant energy conservation and environmental burden reduction in the future. Because of this, NEDO allocated 16.3 billion yen to activities concerning nanotechnology and materials in its FY2005 R&D budget of 148.1 billion yen. This brochure describes NEDO’s research and development projects that involve the collaborative efforts of government, industry and academia in the area of nanotechnology as well as research and development support provided to private sector enterprises.

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Organization of This Brochure This brochure describes NEDO's projects in the area of research and development on nanotechnology. The projects are grouped into the four research and technology programs outlined below. Nanotechnology Program Controlling materials at the nano level can enhance material functions and characteristics, leading to considerable energy savings and environmental load reduction. Nanotechnology is a major advance capable of bringing extraordinary change to various industrial technologies, and thus the establishment of nanotechnology is vital. Knowledge gained from nanotechnology should be systematized to establish a technological base that can contribute to sustainable development of Japan's economy as a basic resource of industrial competitiveness. Innovative Materials Development Program The materials area is one of the strong points of Japanese industry. In this area, timely provision of solutions (commercialization of parts and products) can be achieved by manufacturing system technologies that shorten the lead time for production, and by technologies combining material development and fabrication technologies, making full use of material functions and properties. In this way, the program aims to establish high-value added material industries (a materials industry and a components industry) for creating new markets and jobs and to enhance the international competitiveness of Japanese industry. Program for Fundamental Technologies of Advanced Information and Telecommunications Equipment and Devices Research and development on information and telecommunication technologies will be conducted to develop information and telecommunications equipment and devices for constructing advanced communication networks. The program aims to create a more prosperous society while also considering environmental load reduction and standardization of technologies for promoting practical application and market dissemination.

Research and development program: A policy package of research and development projects that the Ministry of Economy, Trade and Industry considers essential to achieve strategic policy goals related to industrial technologies that are established by analyzing social needs, market trends and technology trends both in Japan and abroad.

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Research Phases Described in This Brochure

Applied Research

Development for Practical Application

Research and Development Projects Focus 21 projects* Basic Technology Research Promotion Activities (Solicitation of proposals for research themes)

*About “Focus 21” Some of the projects described in this brochure are “Focus 21” projects that emphasize development for practical application in order to stimulate the economy. Focus 21 projects must meet the following four conditions: 1. Technical innovation leading to enhanced competitiveness 2. Prospect of findings from research and development that will result in new products and/or services 3. Possibility of creating new markets in a relatively short period of time that will result in significant growth and economic ripple effects 4. Willingness and specific efforts by industry to provide funding for realizing commercial market introduction.

Basic Technology Research Promotion (Private Sector Basic Technology Research Promotion Activities) Unlike its research and development programs, NEDO’s basic technology research promotion activities involve the solicitation of proposals for research themes related to mining and manufacturing basic technology, and entrustment of actual research work to private sector enterprises that propose high risk but promising research themes. In Japan, private sector enterprises undertake most of the research and development activities. This brochure describes research themes related to nanotechnology that are representative of NEDO's basic technology research promotion.

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Commercialization

Basic Research

Nanotechnology Program

Nanotechnology Glass Project Keywords: Glass, Sub-wavelength structure, Telecommunications R&D Term: FY2001᳸FY2005ų

Budget of FY2005:410 million yen

Background ųThe Nanotechnology Glass Project is intended for the development of fundamental technologies for glasses with completely new functions by controlling structure on a nanometer scale. It is primarily known that glass is transparent, hard and stable thermally and chemically.

This project aims to further increase the levels of these advantages. Japanese industry will䇭 extensively utilize the outcome obtained from this project and will cultivate new leading markets in the fields of optical communication, energy and environment. It will also contribute to international society.

Organization Project Leader䇭 䇭Professor䇭K䋮HIRAO䇭Kyoto university Participating Organizations New Glass Forum National Institute of Advanced Industrial Science and Technology Prof .K. HIRAO

Contents Diffraction efficiency (-)

[Ძ] Telecommunications

Ყ Storage Ყųųųųųųųųųųųų Precise fabrication technology for wavelengthlevel periodic structures on a glass surface is being developed using semiconductor microfabrication technology, including lithography and dry etching. For example, the etching rate of the glass could be vertically controlled by doping several additives, realizing fabrication of a rectangular periodic structure with a 200-nm grove width and an aspect ratio of 6. Furthermore, resistance against mechanical shock was remarkably improved by overcladding on the periodic structure. It was demonstrated that this technology was applicable to an ultrasmall demultiplexer on a glass plate of 6 x 9 mm. This project aims to construct the basic technology to fabricate optical memory heads, which will provide high angular dispersion for a so-called “super prism”. Concave mirror Arrayed waveguide Buried output grating Arrayed waveguide input

2mm

1.0

0.8

TM

TE

0.9

TE

TM

30o

0.7 0.6 0.5 1.48

calculated by RCWA

5μm 1.52

1.56

Wavelength (μm)

1.60 1.48

1.52

1.56

1.60

Wavelength (μm)

Diffraction efficiencies and cross sectional SEM views of diffraction gratings before (left) and after (right) overcladding

Also, a high recording density DVD that can record high definition TV images for 24 hours has been developed in this project. This research was transferred to the Focus 21 Project in order to accelerate R&D for practical application. Ყ CommunicationsᲧų ųųųųųųų Optical fiber networks have begun to spread instead of metal networks due to increased Internet traffic. There is a strong requirement of small and low-cost optical devices, which can be used even in a harsh environment. This project is developing new glasses for low-loss optical waveguides, athermal optics and micro-lens arrays. Also,

Ultra-small 4-channel demultiplexer designed to operate at around 1550-nm wavelength

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phosphor has continued for more than a half year, and its intensity is three times as high as that of the phosphors currently used. In the future, nano particles in glass will be employed for the display and lighting using UV-LED as an exiting light source.

femtosecond laser irradiation is being used for fabrication of optical waveguides, gratings, diffraction lenses and three dimensional periodic structures inside glass, which are key elements for three-dimensional optical circuits. ŒO

[Წ] Energy

ŒO ŒO

Beam profile

PL of Ag grating

ųA method to modify the inner wall of numerous through pores of 4-nm diameter in a glass with conductive organic molecules has been developed. Conductive organic-inorganic hybrid material developed by this method exhibits a conductivity of 10-1 S/cm at 140°C. This material is expected to be utilized as the membrane for a direct methanol fuel cell, which is attracting attention as a clean energy source. The project will continue to study the increase in degree of orientation of conductive paths in order to improve the conductivity.

Pattern shape

Micro pattern formation

3D optical circuit

Ძ᳧᳧

Examples of micro optical elements

Ყ DisplaysᲧųųųųųųųųųųųųųųųų New technology to improve the strength of glass is being studied in order to contribute to weight savings of flat panel displays. Crack propagation was suppressed by the formation of a heterogeneous phase inside glass by irradiation with a focused femtosecond laser beam, resulting in an increase of mechanical strength by 1.8 times. Further increases in strength are now being attempted. This process can be applicable to the strengthening of thinner glass plate, and it has an advantage over traditional heat-treatment and ion-exchange methods in the aspect of energy consumption. Crack

Photograph of Fracture

2 inch Conductivity䇭(S/cm)

1 Nafion® (RH=90%) 0.1

0.01

0.001 30

Image of Fracture

Hybrid glass (RH=100%)

Hybrid glass (RH=90%)

50

Nafion® (RH=100%)

70 90 110 130 Temperature (oC)

150

Organic-inorganic hybrid membrane with high proton conductivity (left) and temperature dependencies of conductivities of membrane and Nafion (right)

Heterogeneous phase

[Ჭ] Environment ųSilica based “molecular sieving membranes” have been developed with 20% aligned pores, which could be fabricated by applying an electric field to SiO2-sol film dispersed with liquid crystal followed by the calcination of film to remove the organic components. These membranes can be used to separate CO2, which is a source of global warming, and H2 for next㵥generation fuel cells.

Crack propagation is suppressed by heterogeneous phase

Suppression of crack propagation by heterogeneous phase

Dispersion technology for size-controlled semiconductor nano particles in glass matrix has been developed without degradation of photoluminescence efficiency. An emission efficiency of more than 40% has already been achieved. At this time, the emission from this

Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44 - 520-5220 New Glass Forum Tel :+81-3 -3595-2775

http://www7.big.or.jp/~cgi19786/ngf/indexe.html

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Nanotechnology Program

Nanotechnology Metal Project Keywords:Metal, High purity, Structure R&D Team:FY2001᳸FY2006 Budget of FY2005:300million yen

Background The objective of this project is to achieve dramatic improvement in the mechanical and functional characteristics of metal materials by controlling their composition and structure to ultra-dense and ultra-fine levels.

Project research on ultra-high purity metallic materials is based on controlling impurity concentration at the nano order level and on controlling structure at the nano size level.

Organization Project Leader Professor㩷 A. INOUE Tohoku university ᫊ϙჇ

Participating Organizations㩷

                    ᲢȋȤȃᲣ

Osaka Science & Technology Center.

Japan Research and Development Center for Metals㩷, Hitachi Metals, Ltd. Prof. A.INOUE

Contents and plasticity. In the case of 50%Cr alloy, there is no sigma phase precipitation, with high temperature properties and corrosion resistance that far surpass conventional expectations. Anticipated applications include high temperature materials in thermal power plants and chemical plants.

[1] Ultra High Purity Metals — Heat and Corrosion Resistant Materials Developed Using Nano metallurgy — Ultra high purification of metals such as iron (including alloys) is revealing new properties heretofore unknown. For example, iron that has been ultra-purified to above 99.999% hardly reacts at all with hydrochloric acid at room temperature. And, while industrial grade 99.9% pure iron suffers brittle fracture when subjected to deformation in liquid nitrogen (77K), ultra high purity iron exhibits good plastic deformation at cryogenic temperatures. For most metals, surprising properties become apparent when ultra-purified to a level of within 100ng of impurities per gram of metal. Laboratory research on ultra high purity metals has opened up the field of Nano metallurgy, underpinning the development of innovative new metallic materials that will be indispensable in the 21st century. Ultra high purity Cr-Fe alloys are an example of the results of research on Nano metallurgy. Although the corrosion resistance and strength of Cr-Fe alloys are increased with higher amounts of Cr, severe work-hardening and brittleness have imposed a practical limit of 30%Cr. In the case of ultra-purified 35%Cr alloy, however, absorption energy and strength are so high as to stop a hammer on a test piece during Charpy impact testing. This material also demonstrates extremely low susceptibility to stress corrosion cracking, as well as excellent corrosion resistance

(a)

Ultra high purity Fe-30Cr alloy

(b) SUS316

Stress corrosion fracture susceptibility test (U bend) (Test conditions: 300˚C, 8.7MPa, 10%NaOH bath x 100h)

Thermal power plants

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Chemical plants

[4] Nano Multistructure

㪜㫃㩷㩿㩼㪀

[2] High Strength Steel Using Cu Nano precipitation The aim of this fundamental research is to investigate leading principles for realizing high strength steel with excellent ductility. Improvement of mechanical properties of steel with precipitated Cu clusters of nanometer size is being investigated. With studies on thermomechanical treatment of Cu containing martensite steel supported by computing science, an excellent level of the strength/ductility balance index, TSxEl, as high as 17000 MPa᳽% has been realized. 㪈㪍 㪈㪌 㪈㪋 㪈㪊 Aged at 450㷄 㪈㪉 㪈㪈 㪈㪇 㪐 0%Cu Steel 㪏 JIS13B, 2.7䌾3mmt 㪎 (12.5mm w x 50mm G.L.) 㪍 㪏㪇㪇 㪈㪇㪇㪇

To promote efficiency in time and money consuming material development, the goal of this research is to establish a technique for controlling structure with nano clusters and to provide nano structure simulation software to researchers. Thus far, an analysis of the nuclear creation phenomena of early stage alloy structure creation and the composition analysis of material properties have been made. A simulation of the width of a precipitation free zone has also been undertake.

Aged at 450㷄 TS x El

17000

4%Cu Steel Aged at 250䌾350㷄

15000 13000 11000

Aged at 250䌾350㷄

㪈㪉㪇㪇

㪈㪋㪇㪇

㪫 㪪 㩷㩿㪤 㪧㪸㪀

[5] Ultra Tool Steels Tool steels are important materials for the automobile industry and the information technology industry to produce various parts. In particular, excellent properties that the conventional steels cannot achieve have been required for the hot working tool steels, as the hot working techniques progress.  The objective of this research is to achieve dramatic improvement in the mechanical characteristics of metal materials by controlling their composition and structure to ultra-dense and ultra-fine levels without using large amounts of expensive alloying elements. (Fig.1) Tool steels will be applied to a wide diversity of uses, for example, hot working dies with high strength and softening resistance, cutting tool materials, high strength cold working dies, and hot forging dies with excellent heatresistance, etc. Elevated temperature strength High

[3] Copper Alloys for Electrical and Electronics Devices In line with the downsizing of IT devices, higher reliability of conductive material is required. Moreover, 65 nm and smaller technology nodes are expected for semiconductor manufacturing. Controlling the nano structure of materials, the goal is establishment of a technique to make high strength copper alloy without sacrificing electroconductivity, and reduction of the critical width of copper wiring. Up to now, TS 900MPa and 50%IACS have almost been achieved.



High speed Matrix steel high speed SKH51 steel

ŔŌŅĹ

Objective of this research

Fig.1 Notional illustration of the objective of this research

ŔŌŅĸ ŔŌŅķIJ Hot working tool steels (JIS grade)

Toughness

ŔŌŕĵ High

 Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel: +81-44-520-5220 Osaka Science and Technology Center Tel: +81-6-6443-5326 http://www.ostec.or.jp Japan Research and Development Center for Metals Tel: +81-3-3592-1284 http://www.jrcm.or.jp Hitachi Metals,Ltd. Tel: +81-854-22-1919 http://www.hitachi-metals.co.jp

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Nanotechnology Program

Advanced Nanocarbon Application Project KeywordsᲴNanotube, Fuel cell, LSI wiring R&D TermᲴFY2002᳸FY2005 Budget of FY2005Ჴ1.0 billion yen

Background and Industry) to stimulate the Japanese economy. In the project , two R&D themes are emphasized in particular. The first is to establish electrode material technology for carbon nanohorn on which catalyst is effectively embedded in order to help development of fuel cells used for mobile IT devices such as mobile phones and PCs. The second is to develop application technologies for LSI wiring by applying excellent electric conductivity and mechanical strength inherent to the carbon nanotubes. It is intended to actively apply whatever results gained in this project to various industrial sectors such as the energy sector, IT sector and chemical and environmental sector to advance use of nanocarbon material.

The objective of this project is to develop fundamental technologies for nanocarbon materials such as a single wall carbon nanotube and nanohorn. It is intended to develop mass-production technology by properly controlling specific nano-structure, to develop basic technology to satisfy desired physical and chemical characteristics by way of reprocessing and modification of the produced nanocarbon materials, and to apply IT devices by growing nanocarbon on the substrate under proper control of material properties and orientation. It is also intended to develop nanostructure characterization technologies, which are vital to develop the above fundamental technologies. This project is one of the Focus 21 Projects launched by METI (Ministry of Economy, Trade

Organization Project Leader Dr.S. IIJIMA National Institute of Advanced Industrial Science and Technology Participating Organizations  Japan Fine Ceramic Center National Institute of Advanced Industrial Science and Technology.

Dr. S. IIJIMA

Contents [ Ძ ] Structural Control and Mass Production Technology Mass production and application technology for a multi-wall nanotube is at the stage of commercial consideration. For the single wall nanotube, it is still at the stage of basic research. In this project, we targeted the development of structural control technology and mass production technology in the latter aspect, namely a single wall nanotube and nanohorn as well. By simultaneously developing various technologies such as the fluidized bed method and floating catalyst method to synthesize a single wall nanotube by applying catalyst on hydrocarbon, and the laser ablation method to produce nanohorn without catalyst, it is intended to establish optimum mass production technology as soon as possible and to boost and accelerate development of other application technologies. Through successful establishment of catalyst technology for a fluid bed reactor, we developed synthesizing technology for a single wall nanotube. In the floating catalyst method, we developed technology to continuously synthesize

single wall nanotubes. In addition, we improved recovery efficiency and synthesizing efficiency in nanohorn production.

Single wall nanotube after refine

Equipment to Synthesize Single Wall Nanotube by Floating Catalyst Method

[Წ] Electrode Material Technology for Fuel Cells The capacity of current secondary lithium batteries used for mobile devices has reached the limit. Thus, new next-generation batteries need to be developed. Once nano-carbon material is applied, continuous operation of a note book PC

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expected that technology can be developed for a new transistor made of nanotubes. In this R&D, emphasis is placed on the development of LSI wiring that is expected to be complete at a rather early stage. So far, we succeeded in the development of technology to have nanotubes grow at a selected orientation in via holes by means of the chemical vapor deposition (CVD) method.

can be made possible as long as hydrogen or alcohol is supplied because the energy density of fuel cell is about 10 times greater than that of a lithium secondary batteries. For actual realization of this new battery, we need to clear the hurdle of development of an improved nanocarbon electrode embedded with catalyst. It is nothing more than the development of improved technology in the process of nanodispersion of platinum catalyst and the cost performance. At this point it is known that carbon nanohorn can yield a better result in this respect compared to conventional carbon black materials. It is promising to make a big step toward successful utilization of a nanocarbon battery with increased power output once carbon nanohorn is applied to the electrode of fuel cells in place of conventional carbon black material. We succeeded in prototype production of a fuel cell with compact but higher power capacity used for mobile electronics devices, and proved that such a fuel cell could be practically applied to mobile phones and mobile PCs. Carbo n nanohorn aggregate

Pt catalysts (dark spots) supported on carbon nanohorns

Pt catalysts

Fuel CH3OH

O2

H+

Air

e

Electrode

e

H2O Electrode

e

Proton Exchange Membrane

e

CO2

50nm

㪌㪇㩷㫅㫄㩷 Fuel cartridge (Methanol inlet)

e

e

Schematic drawing of direct methanol fuel cell Internal fuel cell

Prototype of portable notebook PC  with an internal direct methanol fuel cell

 [3] LSI Wiring Technology Carbon nanotubes allow the passage of a huge current density that is about three orders of magnitude more than that of conventional wiring copper metal. This implies that a high performance and highly reliable LSI can be developed if it is applied to wiring material for multi-level interconnections. Further, it is



Cross-sectional Structure of Via Interconnection and  MOSFE

[4] Nanostructure Characterization Technology The ultimate characteristics of the carbon nanotube will be clarified through removal, replacement and addition of certain atoms, and the affected characteristics of nanotubes will be clarified by nanostructure changes will be clarified. Also planned is to analyze and identify the atoms in the structure of nanocarbon material to enable application to devices with higher reliability. It is intended to study nanostructure, tube diameter, length, chirality, shape and behavior of catalyst as well as growth direction and density of nanocarbon materials. It is also intended to disclose useful information such as the difference in chemical bonds before and after gas absorption and the structure and distribution mode of catalyst used for fuel cell application. Further, it is intended to observe the specific interface between nanocarbon material and electrodes and to measure in-situ electric characteristics of a specific nanocarbon material.

 Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 National Institute of Advanced Industrial Science and Technology Tel +81-29-861-9417

http://www.aist.go.jp/index_en.html

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Nanotechnology Program

Nanotechnology Particle Project Keywords: Nanoparticles, Functional devices, Electronics & Information. R&D Term: FY2001᳸FY2005

Budget of FY2005:520 million yen

Background Nanoparticles are of interest because their chemical and physical behavior are unprecede nted and different from those in bulk form.  Nanoparticles have great potential for use in electronic, photonic, chemical and mechanical industry and other application.

This project aims at establishing a platform for developing synthesis and functionalization technologies for nanoparticles, which are imp ortant for producing nanostructures and exhibi ting nano-functions.

Organization Project Leader Hiroshima university

Professor K. OKUYAMA Participating Organization

Japan Chemical Innovation Institute

Prof. K. OKUYAMA

Contents such as oxide, magnetic, semiconductor, phosphor and metallic nanoparticles, as basic technology to scale up to industrial production process. A typical example of the quantum size effect is when luminescent spectra from luminescent semiconductor nanoparticles, which can be controlled from the range of blue to red depending on particle size.

[1] Synthesis of Nanoparticles  To establish technology for synthesizing nanoparticles adaptable to the various fields of electronic information, photo-functions and composite materials, we intend to develop the most suitable synthetic method. The techniques used for synthesizing nanoparticles and related targets are summarized in the figures shown below. We will establish synthesis of nanometer sized, uniform and stable particles,

Gas-Phase Synthesis CVD Method Reactive Monomer Chemical Reaction

Liquid-Phase Synthesis Spray Pyrolysis

Micellar Method

Reactive Monomer

Sprayed Droplets

Chemical Reaction

Evaporation

Coagulation

Solidification Monomer Condensation

Monomer Condensation

Clusters

Sol-Gel Method

Targets

Decomposition

Homogeneous Nucleation Dried Particles

Micellar Chemical Reaction

Particle Size :

1䌾10 nm

Distribution With coefficient variation of㩷 10% or less Particle Shape :

With aspect ratio of 10% or less

Sintering Cryst allization

Clusters Chemical Reaction

Nanoparticles

Homogeneous Nucleation

Agglomeration

Micelle

Nanoparticles

Nanoparticles

Nanoparticles

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Production 100 g/h Rate :

or more

[3] Composite of Nanoparticles and Polymer  It is very difficult to mix nanoparticles with resin mechanically and to obtain uniform dispersion of nanoparticles in composites. We intend to develop technology to obtain a uniform dispersion of nanoparticles in the resin by (1) loosening the agglomeration of nanoparticles, and (2) treatment of nanoparticles with organic compounds, etc. Since the size of nanoparticles in the resin is smaller than the wavelength of visible light, the composites or films are transparent in the visible region in the figure shown below. Through the expression of function/properties of nanoparticles and the application of basic technologies, it is possible to create composite materials, that can be used in a wide range of application fields having excellent thermal, electric, mechanical and photo-functional properties.

Photoluminescence of CdSe nanoparticles having different sizes : 2.0nm (blue), 3.5nm (green) and 4.5nm (red). [2] Organization of Nanoparticles We intend to develop technology to fabricate thin film of ordered nanoparticles by arrangement and deposition on substrate. We also intend to develop novel process for arrangement of nanoparticles in the gas phase using the attractive force between charged nanoparticles and counter-charged patterns on the substrate. We aim to achieve high performance nanoparticles for use in different kinds of devices.

200nm 70nm Nanoparticle

70nm Nanoparticle

Line Arrangement

Dot Arrangement

200nm (TEM photograph) (Appearance) (Top) Conventional method (Bottom) Transparent nanocomposite film

Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 Japan Chemical Innovation Institute Tel:+81-3-5283-3260

http://www.jcii.or.jp/

8

Nanotechnology Program

Nanostructure Coating Project Keywords:Coating, Microstructure, Energy Budget of FY2005: 310 million yen

R&D Term:FY2001᳸FY2006

Background nano-level, will be developed based on efficient processing techniques, theoretical methods, and rapid and detailed evaluation technology. In addition, the project aims to systemize this technology and establish coating engineering as a field in its own right.

The Nanocoating Project’s aim is to establish technology for coating ceramics onto metallic substrates to act as thermal and environmental barriers, thereby reducing a device’s energy demands and environmental burden. Nanocoatings, i.e., coatings containing particles, pores and interfaces precisely controlled at the

Organization Project Leader Professor T. YOSHIDA University of Tokyo Participating Organizations Japan Fine Ceramic Center National Institute of Advanced Industrial Science and Technology .

Prof. T. YOSHIDA

Contents Ĭ Processing Technology Technology is needed for rapidly producing nanocoatings with nano-level precision. Processing methods in use include Thermal Plasma Spraying (TPS), Physical Vapor Deposition (PV D) and Chemical Vapor Deposition (CVD). TPS enables coatings to be produced rapidly, but controlling the structure at the nano-level is difficult. In contrast, PVD and CVD provide good control over formation of nano-level struc tures, but the deposition rate is low. In this project, TPS methods that allow better nano- level control will be developed alongside high deposition rate PVD and CVD methods. These will form the basic processing technologies for rapid production of nanostructured coatings.

Twin Hybrid Plasma Spraying System

ĭ Technology for the Design and Control of Nanocoating Structures and Properties Materials for thermal barrier and corrosion resistant coatings need to be thermally insulating, possess high thermal stability and be resistant to spalling and oxidation. Currently used coating materials do not possess these characteristics because they consist of coarse, micron-size grains and pores. Consequently, their use in gas turbines is limited to turbine inlet temperatures below 1200㷄.

Electron Beam (EB)-PVD Equipment

9

In order to radically improve the above-mentioned properties, each component of the coating system (top coat, bond coat and substrate) and the interfaces between them need to be contr olled via:

techniques spanning nano- to macro-scales are not yet available. Furthermore,with regards to lifetime prediction, property evaluation and non-destructive testing techniques, most methods are at least partly empirical, and quantitative evaluation and analysis techniques under precise experimental conditions currently do not exist. In this project, therefore, non-destructive techniques based on comprehensive performance analysis and multi-scale computer simulations spanning the nano- to macro-levels are being developed for evaluating dynamic interface properties and predicting the life-time and reliability of nanocoatings.

ȷDesign of optimized structures on the nanometer scale using computer simulation ȷPrecision fabrication of coating structures using the techniques developed in Ĭ above ȷAccurate analysis and evaluation of nanocoating properties This will result in the development of novel coating materials with superior thermal insulation behavior, thermal stability and interface properties (including reduced sintering rates, greater oxidation and spallation resistance, and higher phase stability).

į Systematization of Materials Nanotechnology Based on Interfaces between Different Materials In order to systemize the study of nanotechnology based on the nature of interfaces between different materials, the new field of “coating engineering” will be established, and a coating materials database for use in real applications will be created.

Į Performance Analysis and Evaluation Technology In order to develop nanocoating technology, it is important to know how each component of the coating performs under service conditions. The calculation methods currently available are limited in scale; multi-scale simulation

Development of an EB-PVD Technique for

Microstructure of New TBC System

Coating Functional Perovskite Oxides

Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220

Japan Fine Ceramics Center Tel:+81-52-871-3500 http://www.jfcc.or.jp/

10

Nanotechnology Program

Synthetic Nanofunction Materials Project    Keywords:Nano-simulation, Molecular-sensor, Spin-electronics, Nanofabrication R&D Term : FY2001᳸FY2005 Budget of FY2005:230 million yen

Background of

design, novel structure-function relationships on the

theoretically-designed nanostructures, and its ultimate

nanometer scale are being explored. Their validity in

goal is the technical establishment of creation of

the frontier fields of spin-electronics and molecular

artificial materials

nanotechnology are also being demonstrated.

This

project

aims

at

the

providing

fabrication

extremely

high

performance. On the basis of a computational material

Organization Project Leader Dr.H. YOKOYAMA National Institute of Advanced Industrial Science and Technology Participating Organizations National Institute of Advanced Industrial Science and Technology SII Nanotechnology Inc. TOHOKU university.

FUJITSU Limited.

SUMITOMO CHEMICAL

OOSAKA university

Dr. H. YOKOYAMA

Current Results [1] SimulationᲠ Molecular Sensor

-Development of nanosimulation technologies-

metal surface to elucidate a mechanism for molecular

On the basis of theoretical modeling and simulation,

self assembly, nanostructure formation in polymer thin

the aim is to predict various novel functions of 10

films, and investigation of an adhesion mechanism

nm-scale

for a peptide molecule on origo ethylene glycol

materials

with

special

emphasis

on

controlling various molecular properties as shown in

self-assembly monolayers,

Figure 1.

subjects in applications of nanotechnology. (Fig. 2)

which are important

(1) A high speed mesh Evald method was developed as an order N method with coulomb interaction for a three-dimensional structure with a two dimensional periodical boundary condition like molecular film on the surface of metal plate. (2) An efficient computational algorithm of molecular dynamics was developed for structural change of a nanomolecule system composed of a partial rigid body with a long relaxation time over several tens of nano

Figure 1. Multi-time step integrator for a semi-flexible

seconds.

model Target molecule

(3) A coarse-grained particle model and dissipative

e-

particle dynamics method was developed to calculate molecular interaction of nanostructures.

S

S

-Application research on nanostructuresThe above nanosimulation methods were applied to

Figure 2.Molecular sensor bridged between electrodes

structure the prediction of monomolecular layers on a

placed at nanoscale distance

11

[2] Spin Electronics

compared to conventional lithography methods. This

Hard disk drive (HDD) capacity has remarkably

technique can push the limit of miniaturization. The

increased using a giant magneto-resistance effect used

final goal of this project is fabrication of patterns

spin polarized current in which polarized current plays

consisting of 10 nm wide lines within a 10 mm area

the crucial role. Thus, electron spin has the potential

with an accuracy of 1 nm. (Fig. 4)

of opening the door to new devices not previously possible, and semiconductor spin is a hot topic in the spintronics (spin electronics) field. In this research, new nanostructures that exhibit the world largest magneto-resistance effect at room temperature have been successfully fabricated. (Fig.3) The material in the nature of 100 % spin polarized at the Fermi level is called as a half metallic ferromagnet. If it becomes possible to use such material for a Figure 4. AFM image of an oxide lattice on Si surface

magnetic sensor and magnetic random access memory ( MRAM )

with

magnetic

tunnel

( line width of 15 nm and spacing of 100 nm)

junctions,

performance will be remarkably improved. Theoretical predictions of half-metallic material were

In order to evaluate the relationship between function

made using ab-initio calculations, and attempts were

and structure of nanostructured material, a “laser

made to synthesize the predicted materials using

nano-prototyping” process was developed (Fig. 5).

molecular-beam epitaxy.

Monodispersed magnetic core-shell nanoparticles are synthesized by laser ablation and a size classification technique aimed at magnetic nanoparticles is expected to be used for ultra-high-density magnetic recording media.

Figure 3. Magnetic resistance switch device

 [3] Nanomanufacturing Technology

Figure 5. Laser nanoprototyping technology

Anodic oxidation using a scanning probe microscope offers convenient and on-demand nanofabrication

Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 National Institute of Advanced Industrial Science and Technology

Tel. +81-29-861-9417 http://www.aist.go.jp/

12

Nanotechnology Program

Nanotechnology Material Metrology Project Keywords: Nanoparticle, Nanopore, Surface, Thin film, Thermophysical property, Reference material R&D Term: FY2001㨪FY2007 Budget of FY2005: 210 million yen

Background range for various measurements commonly used across different technical fields and for facilitating the dissemination of the results of nano R&D to the manufacturing sector.

The Nanotechnology Material Metrology Project will provide a definite solution, by developing the nanoscopic measurement standards, to assure any results of measurement in the nanoscopic

Organization Project Leader Dr.M. TANAKA National Institute of Advanced Industrial Science and Technology Participating Organizations National Institute of Advanced Industrial Science and Technology Japan Fine Ceramic Center Dr. M. TANAKA

Contents Fine particles There is a need to accurately evaluate nanoparticles as a building block of nano structure, as well as fine particles, for the purpose of quality management of semiconductors, environmental control of exhaust gases and so on. One of the key technologies to attain this objective is to supply accurate reference material for particle diameter. AIST has been supplying the world’s most precise standards for a particle diameter of 100 nm and is currently striving to develop nanoparticle reference material for a range of even smaller diameter. In this project, practical application of a new technique for measuring the mass of fine particles is being pursued using the equilibrium between centrifugal force and electrostatic force both working in on particles. In the field of polymer materials, the diffusion coefficient of polymers and nanoparticles in solution is measured with precision using dynamic light scattering and nuclear magnetic resonance, and the average particle diameter is determined. Furthermore, scattering pattern measurement is being conducted on samples separated by size exclusion using multiangle laser light scattering (MALLS), leading to the establishment of a technique to accurately measure particle distribution.

Principle of a Method for Aerosol Particle Mass Analysis Nanopores Porous materials with nanopores of a few nanometer diameter are attracting attention as low-k dielectrics for the wiring system of next generation semiconductor devices. In order to measure such nanopores, the development of a positron annihilation method will provide information regarding both the average size and size distribution of nanopores by calculating positron lifetime based on the energy distribution of gamma rays generated by position annihilated in the samples, which is found in nanopores having sub-nm to 10 nm material scale. There is also a need to measure the period of gamma ray emission.

13

In this collaboration project with the Photonics Research Institute, a popular-type compact-size positron lifetime spectrometer that utilizes a positron beam obtainable from a radioisotope is being developed.

X-ray

e-

A thin film sample on the holder Thermophysical Properties Thermophysical properties of thin films such as thermal diffusivity, specific heat capacity, thermal conductivity and thermal expansion coefficient are indispensable in terms of thermal and structural designing. In this project, the thermal change on the reverse side of thin film is being observed referring to the change of reflectance to a laser beam, by heating the film surface using a pico-second laser (the pico-second thermoreflectance technique). Measurement technology will thus be created for the thermal diffusivity of thin films and the coating material, boundary thermal resistance between thin films, and boundary thermal resistance between the coating and the base material. By means of a laser interferometer, technology to accurately measure the coefficient of thermal expansion of solid materials will be established.

Compact-size Positron Lifetime Spectrometer Surface Structure X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) are widely used as the means of characterization of surface composition, electronic state, etc. of materials that have functional surfaces, such as thin films, catalysts, sensing devices and so on. The target of the project is development of tunable photoelectron spectroscopy technology with synchrotron orbit radiation as an excitation source. Also, the objective is the establishment of quantitative reliability of conventional XPS and AES excited by KD-ray of Mg and Al. In addition, a database for surface analysis is to be constructed based on the collection of a standard spectrum of samples whose physical and chemical change is kept to the minimum. A technique to eliminate background distortion of spectrum causes by inelastic scattering of photoelectrons is also a subject of the study.

Illustration of the Picosecond Thermoreflectance Measurement System

Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 National Institute of Advanced Industrial Science and Technology Tel +81-29-861-4394 http://www.aist.go.jp/index_en.html

14

Nanotechnology Program

Project on Nanostructured Polymeric Materials Keywords: Polymer, Nano-scaled interface structure control R&D Term: FY2001᳸FY2007 Budget of FY2005: 630 million yen

Introduction This research project aims at achieving a

higher-order structures of polymers. Ultimately,

“quantum leap” in the attainment of high

the objective is to contribute to the establishment

functional

polymer

of new materials and a technology system capable

materials and of environmental compatibility,

of supporting a wide range of application fields in

and its purpose is to establish a technological

the field of energy conservation.

performance

of

organic

basis for precise control of the primary and

Organization Project Leader  Dr.S NAKAHAMA National Institute of Advanced Industrial Science and Technology Participating Organizations Japan Chemical Innovation Institute.

Polymatech co,. LTD. ULVAC, Inc.

National Institute of Advanced Industrial Science and Technology Dr. S. NAKAHAMA

Contents [1] Packaging Materials

[2] Nano-Composite Materials

 High performance ultra-thin diebond films for a

A novel polyphenylene ether/ poly(ethylene-co-

semiconductor package are being developed to

glycidylmethacrylate) (PPE/EGMA) nano alloy

meet demand

for packaging materials having

higher reliability for downsizing of electronics devices. 㪪㫀㫃㫀㪺㫆㫅㩷㪻㫀㪼㩷

㪛㫀㪼㪹㫆㫅㪻㩷㪽㫀㫃㫄㩷

㪪㫋㫉㫌㪺㫋㫌㫉㪼㩷㫆㪽㩷㫊㪼㫄㫀㪺㫆㫅㪻㫌㪺㫋㫆㫉㩷㫇㪸㪺㫂㪸㪾㪼㩷

 Acrylic rubber/epoxy resin alloy film with a 20nm periodic distance was successfully obtained by curing with an imidazole compound to fix spinodal decomposition at the early stage. This film showed higher tensile strength and lower was obtained by reactive blending with a long

thermal expansion than conventional film at 1μm,

(L/D=100) twin screw extruder. This nano alloy

which suggests the possibility of its application

has excellent processability and properties such

for packaging material.

as strength, heat resistance and insulation performance. This material was observed using the 3D-TEM under development in this project to visualize its stereoscopic morphology.

15

㪫㪜㪤㩷㫀㫄㪸㪾㪼㩷㫆㪽㩷㪧㪧㪜㩷㫅㪸㫅㫆㩷 㩷 㪸㫃㫃㫆㫐㩷

㪊㪛㪄㪫㪜㪤㩷 㫀㫄㪸㪾㪼㩷 㫆㪽㩷 㪼㫋㪿㫐㫃㪼㫅㪼㪄 㪼㫇㫆㫏㫐㩷 㪺㫆㫇㫆㫃㫐㫄㪼㫉㩷 㪻㫆㫄㪸㫀㫅㩷 㫀㫅 㪧㪧㪜㩷㫅㪸㫅㫆㩷㪸㫃㫃㫆㫐㩷

[3] Halogen-Free Materials  A halogen-free flame retardant material with high flexibility, high strength and recyclability was

successfully

vulcanization rubber

of

developed an

by

dynamic

ethylene-propylene-diene

(EPDM)/polyethylene

[5] Nanostructure Analysis Technology

(PE)/Mg(OH)2

ternary system as shown below. This material can

 Scanning viscoelasticity microscopy (SVM) was

be used for insulation or the sheath of power

developed to precisely evaluate surface nano

supply cables, replacing PVC.

mechanical properties. Quantitative evaluation of surface elastic properties for glassy polymers was achieved to estimate surface glass transition temperature (Tg) at surface, 40é lower than the Tg of bulk as shown below.

[4] High-Strength Fibers  Melt spinning with laser irradiation was found to be effective in controling the structure of polymer chain entanglement, and followed by drawing and annealing of as-spun fibers, the strength of PET fibers successfully achieved

[6] Shared Technology Platform

1.4GPa. Such high-strength fibers are expected to

 Review articles concerning research subjects,

be applied for tire cord.

including some R&D achievements of this project, were

published

“Nanostructured

as

a

Polymeric

book

entitled

Materials

and

Technologies” in order to promote a wide range of knowledge concerning polymer nanotechnology.

Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220

Japan Chemical Innovation Institute. Tel: +81-3-5283-3260 http://www.jcii.or.jp/

16

Nanotechnology Program

Advanced Nanofabrication Process Technology Using Quantum Beams Keywords: Cluster ionŴNo-damage nano-processing, High-speed and precise nanoprocessing            R&D TermᲴFY2002᳸FY2006 Budget of FY2005Ჴ260million yen

Background Advanced quantum beam process technology, which employs gas cluster ion beams and high-brightness synchrotron radiation, has considerable potential for material processing and analysis in nanotechnology. Especially, the cluster ion beam process, which uses irradiation of energetic aggregates of atomic or molecular gas, has opened a new field in material processing. Cluster ion beam technology originated in Japan from extensions of ion beam technology developed over the last 100 years. In advanced quantum beam process technology, low-energy irradiation and lateral sputtering effects are applied towards a ‘no-damage nanofabrication’ process. Also, enhanced chemical reactions due to dense energy deposition by cluster ion beam irradiation are employed to develop high-speed

and precise nanoprocessing technology. In this project, nanoprocessing techniques for various semiconductor, magnetic and compound materials are being developed with advanced quantum beam technology.

Organization Project Leader Professor I. YAMADA Kyoto university Participating Organization Osaka Science & Technology Center

Prof. I. YAMADA

Contents Basic Technologies It is important to optimize the cluster species, cluster size or the ion energy of cluster ion beams for industrial applications of advanced quantum beams. In the basic technology development program, high size-controlled cluster ion beams were formed and reactive cluster ions having high-energy were irradiated to obtain fundamental characteristics. To analyze interactions between cluster ions and target atoms, large-scale molecular dynamics simulations and Monte Carlo simulations were performed. Also, high-brightness synchrotron radiation facilities such as SPring-8 were used to study ion induced damage at the nanometer level.

 Cluster size control and   Harima Science Garden City irradiation system        SPring-8

17

No-damage Nanoprocessing Technology Magnetic devices are constructed using ultra-thin films, and technology that realizes nanometer order processing is required. In pacticular, surface damage and roughness are crucial factors that dominate device characteristics. In this project, the goal is development of nanoprocessing technology for magnetic materials. Therefore, a practical no-damage, ultra-smooth nanoprocessing method aiming at both surface roughness and sub-surface damage depth below 1nm will be developed. Also, because of the high sensitivity of materials to radiation damage, development of large area processing of compound semiconductor wafers is needed. In this research project, 6 inch or large SiC wafers are being processed with advanced quantum beams, a task that is difficult to achieve with

 No-damage Nanoprocessing Technology

  Magnetic devices

 SiC wafers

conventional processing. High-speed and Precise Nanoprocessing Technology High-speed etching of semiconductors is needed to obtain photonic crystals and large area thin film devices. In this research project, reactive and high-energy cluster ions are employed for the surface processing of polycrystalline Si with surface roughness below 2nm for high-speed thin film display devices. In addition, high-speed etching of Si for photonic applications is being developed. This technology will have an etching rate higher than 10Œm/min for patterns below 100nm

 High-speed and Precise Nanoprocessing Technology

 Photonic Crystal

dimension and an aspect ratio between 1 to 20.

Contact Information New Energy and Industrial Technology Development Organization Machinery System Technology Development Department Tel: +81-44-520-5241 Osaka Science & Technology Center

Tel: +81-6-6443-5322 http://www.ostec.or.jp/

18



Next-generation FPD

Nanotechnology Program

Full Color Rewritable Paper Using Functional Capsules Project

Keyword: Electrophoresis, Capsule, Rewritable paper Budget of FY2005: 360 million yen

R&D Term: FY2002᳸FY2005

Background information

The goal of this project is to develop new

media

such

as

newspapers,

display material for an electrophoretic display

magazines, books, posters etc. can be used

that enables control of electrically charged colored

repeatedly. It will also be possible to access

nanoparticles dispersed in solvent. The paper-like

information without feeling uncomfortable as a

reflective design is the remarkable characteristic

paper culture has existed for over 5000 years. By

of this display compared to emissive displays such

of

paper

becomes

results

of

this

project,

proposed and new markets for content can be

Not to use a light source becomes energy saving. substitution

the

protection of finite forest resources can be

as cathode-ray tube,EL and plasma displays. If

applying

developed in the future.

possible,

Organization Project Leader Professor T. KITAMURA.

Chiba University

Participating Organization Japan Chemical Innovation Institute

Prof. T. KITAMURA

Contents Basic technology for full color rewritable paper roughly consists of the following. [1] Encapsulation Technology Capsule technology derived from non-carbon paper has many applications, such as wrapping technology for food, medical supplies, chemicals, liquids, powders and gases. Based on such materials, encapsulation types, capsule materials and capsule structure have been examined.

emulsifying method, etc. have been examined,

In this project, with the purpose of making a

and a capsule of 10-60 micrometer average

capsule that includes dispersion liquid, various

particle diameter with 10% or less of CV values

techniques

separation,

was successfully manufactured. Furthermore, by

coacervation,

means of capsule design, wall thickness control

interfacial

related

to

phase

polymerization,

solvent-extraction,

phase

inversion

and

and

interfacial radical polymerization have been

formulation

technology

development,

practical capsule design was attained.

examined. Moreover, in order to obtain a monodispersed capsule, the IJ method, SPG film

19

a

[2] Nano Functional Particle Surface Physical

[3] Development of Picture Display Material and

Property Control Technology

Functional

Technology to disperse and electrically charge

and

a

particles as the display material, an electrode for

To create coloring particles, various techniques solvent

polymerization,

Using

To use a capsule that includes nanofunctional

been developed. as

Technology

Capsule

nano-sized colored particles in organic solvent has

such

Evaluation

evaporation,

emulsification

suspension

control and arrangement of capsules is necessary.

dispersion

Moreover, to make a flexible display device model,

polymerization

the electrode and transistor for control must be

polymerization

are

being

flexible, and organic semiconductor material is a promising possibility.

examined. Key points to achieve This technology are

As preparation for realizing flexible rewritable

controlling morphology, diameter and distribution,

paper

electric charge († potential), dispersion stability,

electrodepattering

material design and formulation of material.

semiconductor forming is being carried out.

Investigation

of

technology

wet and

process organic

Technology for two-dimensional arrangement is being investigated using a method to transfer, print and electrodeposit materials in order to achieve color display.

㪮㪼㫋㩷 㫇㫉㫆㪺㪼㫊㫊㩷 㫇㪸㫋㫋㪼㫉㫅㫀㫅㪾㩷 㩷

Particle Model and Created Particles

㪼㫃㪼㪺㫋㫉㫆㪻㪼㩷

Transparent

䋱㱘䌭

Colored

㪤㫆㫅㫆㪻㫀㫊㫇㪼㫉㫊㪼㪻㩷㪧㪸㫉㫋㫀㪺㫃㪼㫊㩷㪬㫊㫀㫅㪾㩷㪤㪸㪺㫉㫆㫄㫆㫅㫆㫄㪼㫉㫊㩷

Furthermore, to control the interaction of

㪰㪤㪚㩷㪺㫆㫃㫆㫉㫀㫅㪾㩷㫌㫊㫀㫅㪾㩷㪜㪚㩷㫄㪸㫋㪼㫉㫀㪸㫃㫊

nanoparticles and capsule walls, analysis of

Moreover, for color expression, examinations of

particles and polymer film is being conducted.

electrochromic

111

[-] [-]

0.6 0.6

⚥ⓍಽᏓ ⚥ⓍಽᏓ

0.4 0.4

Retrace key ke

00

20 20

40 40 40

well

as

the

Recently, a reflective type display has gradually

0.2 0.2

00

as

electrophoresis method are being conducted.

Surface treatment weakens adhesion force

0.8 0.8

material

60 60 60

80 80 80

Additive conc. additi e Without ith t Dispersant Dispersant coCoupling pling agent

been

Colloid probe

proven

to

be

practical,

and

an

electrophoretic display is one of the most

[mg/m22 ] [ ---/ ] 18.9 0.500 0.379 agent

paper-like methods. Research to establish basic technology,

especially

for

whiteness

background, high resolution to satisfy

-3

-3 -3 100x10 100x10 100x10

of the

complicated character expression of Japanese and

ઃ⌕ജ [nN/nm] ઃ⌕ജ [nN/nm]

generating color, etc. is being conducted in this

Change of Adhesion Force between Particle and Film



area.

Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 Japan Chemical Innovation Institute Tel +81-3-5283-3260 http://www.jcii.or.jp/

20

Nanotechnology Program

Nanostructure Forming for Ceramics Integration Project  Keywords: Ceramics, Nano crystal, Iinformation and telecommunications R&D Term:FY2002㨪FY2006 Budget of FY2005:250 million yen

Background This project, pursuing the unique aerosol deposition method (AD method) originally developed in Japan as a core technology, has aims at a significant reduction in the process temperature, miniaturization and high densification of materials. From the viewpoint of manufacturing technology, combining metals, glasses and plastics at the nanoscale permits integration at the component level. An innovative low temperature integration technology for advanced ceramic materials has been developed

to significantly improve the function of finished components. The purpose of this project is through the exercise of attained achievements, ro enable Japan’s ceramics industry to create advanced products that will lead the world markets in the fields of information, communication, energy and environment technologies, resulting in enhanced international competitiveness as well as contributing to society through new market developments.

Organization Project Leader Dr.J AKEDO. National Institute of Advanced Industrial Science and Technology Participating Organizations National Institute of Advanced Industrial Science and Technology Manufacturing Science and Technology Center Brother Industries, Ltd. TOTO LTD. FUJITSU Limited. NEC Corporation Sony Corporation. NEC TOKIN Corporation

Dr. J. AKEDO

Contents [1] Process Research and Development ɔ Compaction of nano-sized ceramics at room temperature ɔ The AD method is a film deposition technology where the impact of solid state particles can create a strongly adherent, high-density nano crystalline ceramic film by gas blasting nano sized ceramic particles onto a surface. The deposition rate is 30 times faster than that obtained with conventional thin film technology and the ceramic thin film can be deposited at room temperature. Initially, a new ceramics film creation mechanism “rroom-temperature-shock- compaction-phenomenon” was investigated. It was discovered that the material particles were fractured and deformed into nano crystallite-sized particles of 10 to 30 nm and formed dense nano crystal structures on impact with the substrate, with the activation of the newly formed surfaces on collision of particles dominating the inter-particle bonding. Based on the above deposition model, the optimum deposition condition was calibrated, and ǂ-Al2O3 nano particles were successfully compacted at room temperature a world first, achieving electromechanical properties equal to those of sintered ceramics. Furthermore, the dielectric breakdown strength of this ceramic thick film was a single digit greater (150 – 300 kV/mm) than in sintered ceramics. It was also confirmed that the plasma corrosion resistance and uniformity were superior to sintered ceramics due to the absence of pores. Uniform deposition was achieved over a 200 mm square area. This process represents a technological breakthrough,

21

Wide area 㱍-Al2O3 layer deposited on metal substrate at room temperature using “roomᏱ᷷ⴣ᠄࿕ൻ⃻⽎䭡೑↪䬦䬮㊄ዻၮ᧼਄䭇䬽 ᄢ㕙Ⓧ䕙䯹䰍䰸䎕䰛䎖⤑䬽ቶ᷷ᒻᚑ temperature-shock-compaction-phenomenon”

䮑䮕⚿᥏⚵❱structure Nanocrystal

㪋㪇㫅㫄

in as much as wide ranging applications are anticipated, such as the use of moderately priced raw material particles, currently used for ceramic processing, to form nano structured ceramic films, although the conventional sintering process of over 1000 oC is not required while achieving the hardness and density equal to ceramics sintered in bulk at high temperatures. ɔ Upgrading process technology ɔ Whereas ceramic films possessing the hardness and density equal to sintered ceramics can be deposited at room temperature using the AD method, the electrical properties, including ferroelectric and ferromagnetic, essential to their application to electronic devices, are inadequate due to their sensitivity to the nano structure of the films. Improvement in the properties of the primary particles has been achieved with the assistance of different energy sources, including laser, plasma and high-energy beams as well as modifications to the primary particles themselves. [2] Application Development of Devices

been fabricated by depositing BaTiO3 ferroelectric materials onto a Cu substrate using the AD method. A capacitance of more than 3 nF/mm2 was achieved, far greater than the competitive technology of ceramics/polymer composite, films. This technology has yielded the worlds highest performance for a capacitor fabricated at process temperatures of less than 300 oC. Additionally, electro magnetic interference (EMI) wave absorbers and millimeter-wave imaging sensors are currently under development.

ɔ Piezoelectric devices ɔ Using piezoelectric materials, applications to microdevices such as MEMS optical scanners, ink jet heads and microgyroscopes have all been discussed. In this project, an optical micro scanner having high-speed performance with a resonance frequency of over 30 kHz in atmospheric ambient was successfully fabricated by depositing piezoelectric materials at a high rate onto the scanner structure, fabricated by Si-micromachining via the AD method. This type of high-speed scanning optical scanner is as anticipated to be a key component for use in various types of sensors or next-generation display devices.

LLSI⚛ሶ S I

Capacitor 䉨䊞䊌䉲䉺 䊐䉞䊦䉺 Filter 䉣䉝䊨䉹䊦 䊂䊘䉳䉲䊢䊮⤑

Piezo-driven M O SLM 䎤䎧ᴺ䭡↪䬓䬮࿶㔚㚟േ䎰䎲䎶䎯䎰 ADᴺ䉕೑↪䈚䈢࿶㔚㚟േဳMOSLM form ed by AD m ethod

࿶㔚㚟േ䎰䎨䎰䎶శ䮀䭴䮪䮑䯃 optical micro Package of optical micro scannerscanner

䊒䊥䊮䊃ၮ᧼䋨㪝㪩㪋䋩਄䈮㪘㪛ᴺ Endiveted capacitor formed on 㪝㪩㪋਄䈮ᒻᚑ䈚䈢䉨䊞䊌䉲䉺 circuit 䈪ᒻᚑ䈚䈢䉨䊞䊌䉲䉺 board (FR4) by AD method

㪫㪼㪺㪿㫅㫀㪺㪸㫃㩷㫇㫆㫀㫅㫋㩷㪑 ᛛⴚ䈱䊘䉟䊮䊃䋺 㪟㫀㪾㪿㩷㫊㫇㪼㪼㪻㩷 ᓥ᧪䉋䉍ෘ䈇䌓䌩 ᭴ㅧ䋬䌐䌚䌔⤑䈪 㫊㪺㪸㫅㫅㫀㫅㪾㩷㫉㪼㪸㫃㫀㫑㪼㪻㩷 㜞೰ᕈ䊶㜞ㅦᔕ 㪹㫐㩷㫋㪿㫀㪺㫂㩷㪪㫀 㪸㫅㪻㩷 ╵䉕ታ⃻ 㪧㪱㪫㩷㫊㫋㫉㫌㪺㫋㫌㫉㪼

㔚࿶ශട೨

Initial

Upper electrode

ɔ Optical devices ɔ With the anticipated requirement of ultra-high speed integrated optical circuits to cope with the need for high-capacity information processes, the development of an ultra-high speed optical modulator has been studied. Using the AD method, PLZT electrooptic materials have been successfully deposited onto a glass substrate at a process temperature 100oC lower than conventional processing temperature. A transparent film with an electrooptical constant (rc) of 102 pm/V was successfully obtained, being twice the generally accepted value and five or six times larger than that of single crystal LiNBO3, again denoting the world’s highest performance. A Fabry-Perot type of optical modulator using this film is also being produced.

㔚࿶ශടᓟ

Applied voltage

v-MOSLM䈱ᢿ㕙࿑

Reflection mirror

Magnet-optical layer ⏛᳇శቇጀ

࿶㔚⤑

H PZT cantilever

SGGGၮ᧼

P Z T la y e r

Heff

㔚࿶ශട Cross section of v-MOSLM ೋᦼ⁁ᘒ

Furthermore, processing has continued, aiming at realization of 3D-projector and holographic memories, the development of fast response spatial light modulators, in place of liquid crystal. Capitalizing on the advantages of the AD method, such as a lower process temperature and a high deposition rate, PZT-MOSLM ާPZT-Magneto-Optic Spatial Light Modulators) have also been prototyped, integrating the smart structure, incorporating a piezoelectric thick film with magneto-optic materials. Successful pixel switching at 20 MHz has already been achieved with an 8V drive voltage.

E O -th in film w ith

EO-modulator 䌅䌏ᄌ⺞⚛ሶ

ㅘ᣿䎳䎽䎷⤑ Transparent PZT layer

p e rfo rm a n c e in th e w o rld ਎⇇ᦨ㜞ᕈ⢻䈱䌅䌏⭯⤑ ਎⇇ᦨ㜞ᕈ⢻䈱䌅䌏⭯⤑ 㱐䂦䌮 Relative Change of Refractive Index 㱐䂦䌮 Relative Change of Refractive Index

High speed piezoelectoric

Antenna 䉝䊮䊁䊅

2<6ኒ#&ᐏ PZT(60/40) PZT AD 䎳䎽䎷♽ layer PZT(60/40) r (pm/V) r (pm/V) c

㪇㪅㪇㪇㪊 㪇㪅㪇㪇㪊

c

102102

EOEO Effect Effect 㬍6㬍6

㪇㪅㪇㪇㪉 㪇㪅㪇㪇㪉 㪇㪅㪇㪇㪈 㪇㪅㪇㪇㪈 㪇

17 17

㪇

㪄㪈㪇

㪄㪈㪇

㪇

㪇

㪈㪇

㪈㪇

㪉㪇

㪉㪇

㪊㪇

㪊㪇

㪄㪇㪅㪇㪇㪈

ɔ High frequency devices ɔ With increasing CPU speed and higher communication frequencies, surface mounting technology has reached its limit in the development of the high-frequency devices in the GHz band. In order to address this problem, highly accurate fine-scale integration of the dielectric, magnetic and metallic materials is required and further miniaturization and high-performance devices having reduced weight are needed. In this research, an embedded capacitor structure has

㪄㪇㪅㪇㪇㪈 Electric Field 㪜䇭㩿㫂㪭㪆㪺㫄㪀 LiNbO3 Electric Field 㪜䇭㩿㫂㪭㪆㪺㫄㪀

LiNbO3 (conventional) (conventional)

In the future, it is planned to develop a high-speed optical modulator with a low driving voltage using a ceramic film and to use it in a wide variety of areas such as realization of miniaturization of network equipment and high-speed computer data transfer.

Contact Information New Energy and Industrial Technology Development Organization Machinery System Technology Development Department Tel: +81-44-520-5241 National Institute of Advanced Industrial Science and Technology Tel: +81-29-861-9417 http://www.aist.go.jp/

22

Nanotechnology Program

R&D of 3D NanoScale Certified Reference Materials Project Keywords: Nanoscale, Reference materials R&D Term:FY2002᳸FY2006 Budget of FY2005: 310 million yen    

Background quantitativity is not sufficient. The lack of accuracy is a najor impediment to R&D of nanotechnology. To solve this problem, this project has focused on the development of Nanoscale rulers that will serve as the world's smallest national measurement standard.

Nanotechnology, one of the most promising tool in this century for various fields of industry, is based on controlling nanometer-scale fine structures and their arrangement. Recent progress in observation techniques has made it possible to see structures relatively easily, however their

Organization Project Leader  Dr.I KOJIMA. National Institute of Advanced Industrial Science and Technology Participating Organizations National Institute of Advanced Industrial Science and Technology Dr. I. KOJIMA

Contents Since a nanoscale has a very fine pitch, structural evaluation should be performed using a method having atomic level resolution. The most probable candidate is application of the atomic force microscope (AFM). In order to establish traceability of the nanoscale’s pitch size to the national length standard, special AFM and traceable-AFM is now under development. The figure below is a schematic representation of the traceable-AFM, which is atomic force microscope equipped with laser interferometers for X,Y, Z axes. The resolution of the laser interferometers is 40 pm, which is the size of one-fifth of an atom. In order to achieve certainty

Since nanostructures can have three-dimensional shapes, nanoscales for lateral direction and depth direction are being developed. =?.CVGTCN0CPQUECNG In this research, several 1D-grating-shaped nanoscales are under development. The pitches of nanoscales will be determined within the range of 25 – 100 nm. Since the quality of the nanoscales should be as high as possible, the best fabrication technique will be selected. At present, an electron beam lithography technique and an application of a super lattice cross section, both of which are already established in the semiconductor industry, are applied to fabricate nanoscales.

U ltra -h ig h re so lu tio n la se r in te rfe rom e te r

P re cision X YZ s ca n nin g s ta ge

B e a t㩷 sig na l

W ide ba n d 䌚 AFM head

L e n g th 㩷 s ta n da rd Io d ine sta bilize d H e -N e lase r O ff-s e t lock

䌘

M e tro lo g ic al fram e w ith lo w e xpa n s ion m a te ria l

H ig h ly s ta b ilize d la se rs

Tra ce a ble A F M 23

depth is focused on GaAs/AlAs and SiO2/Si systems. In the case of the GaAs/AlAs system, a sharp interface can be achieved by the epitaxial growth process. On the other hand, the existence of a structural transition layer at the interface of thermally oxidized SiO2/Si is well known. In order to fabricate SiO2/Si with a sharp interface, an original technique using an ultra-high concentration ozone has been employed. A thickness calibration method, including an evaluation of film and surface/interface quality, is also under development. Certified thickness of the nanoscale will be calibrated by using traceable-XRR (X-ray reflectometer: see below). In order to maintain traceability, an ultra-high precision goniometer for traceable XRR will be calibrated using the national angle standard. The x-ray reflectivity profile will be analyzed with a sample shape to reduce uncertainty. A high quality nanoscale will be available in 2009

of 0.1 nm, a higher precision X,Y, Z stage having angular movement along with laser axes smaller than 10 nanoradian are being developed. Traceability to the national length standard will be maintained by using an iodine stabilized He-Ne offset locked laser. A high quality lateral nanoscale with a pitch of 25 nm calibrated by traceable-AFM will be available in 2009. =? Nanoscale Depth Regarding nanoscale depth, thin film reference materials are under development. According to the IRTS roadmap, the depth of the source to the drain extension (SDE depth) of the MOS transistor will shrink to the 10 nm level by 2010. Therefore, the thickness of nanoscales is targeted at 3 – 10 nm. Since the nanoscale depth will be used to calibrate elemental depth profiling data, a nanoscale should have the following features: higher uniformity of density and stoichiometry in depth and lateral direction, and a sharp interface of the layers. Because sputtering rate varies with the material, the same material standard is necessary for accurate calibration. Based on the market size and needs, development of nanoscale

High power X-ray source

Wide range X-ray detector Higher precision goniometer calibrated by angle standard X-ray Shield

X-ray and noise shield Traceable-XRR

 Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 National Institute of Advanced Industrial Science and Technology Tel +81-29-861-4880 http://www.aist.go.jp/index_en.html

24

Nanotechnology Program

Advanced Diamond Device Project Keywords: Diamond, Electron emitter, Semiconductor devices R&D Term:FY2003㨪FY2005 Budget of FY 2005:660 million yen

Background techniques will be established at an early stage. Development of electron emission devices has also been undertaken to solve technical problems concerning practical use. The success of the ADD project is ensured by collaboration of top-level laboratories, universities and companies, and new diamond products are expected to develop into a large commercial market.

This project focuses on electron emission devices such as a diamond discharge lamp cathode, a diamond electron emitter and high frequency diamond transistors since these devices are expected to achieve practical uses soon using negative electron affinity inhering in only diamonds. Fundamental technologies, doping techniques and surface and interface control

Organization Project Leader Dr.N FUJIMORI National Institute of Advanced Industrial Science and Technology Participating Organizations Japan Fine Ceramics research Association National Institute of Advanced Industrial Science and Technology TOSHIBA Corporation. Sumitomo Electric Industries, Ltd. KOBE STEEL, LTD. Dr. N. FUJIMORI

Contents Surface termination techniques such as a remote plasma technique with less surface damages will be developed. Surface characterization techniques to obtain information about the relationship between electron affinity and surface nanostructure will be used for development of surface termination techniques for electron emission devices. To control interface states with metal or insulators, ion implantation techniques will also be developed.

[1] Control of Diamond Electrical Properties a) Development of doping technology For development of diamond electronic devices, it is necessary to improve transport properties operating at room temperature. For this, efficiency and activation efficiency are key issues by means of introduction of doping atoms providing free electrons and holes into a high-quality diamond network with a fewer number of defects and undesirable impurities. In this project, based on the above concept, the following research is being conducted: 1) Growth of high-quality diamond; 2) Doping techniques of gas phase and ion implantation with undesirable impurities; and 3) Improvement of characterization techniques of diamond crystalline structure and electrical properties.

Microwave Plasma CVD System

b) Surface & interface control for diamond electronic devices Another important issue concerning diamond electronic device application is control of the surface and interface with metal and insulators.

Fig. View of System

25

[2] Diamond Discharge Lamp Cathode

developed. A cathode has been separated by 36 electrodes using this technique. By making a smaller device and controlling the current at separate electrodes, a large current density of 12mA/mm2 has been obtained. In addition, n-type semiconductor emitters have been fabricated by phosphorous doping. These emitters exhibit a very low threshold voltage. A very high performance emitter source will be established by optimizing a combination of nanofabrication, separate electrodes and n-type doping.

A highly efficient and ecological diamond discharge cathode for cold cathode fluorescent lamp (CCFL) is under development. Recently, the amount of CCFL production has abruptly increased for backlighting of LCD-TVs. To improve CCFL light emitting efficiency, cathode voltage drop Vc should be reduced. For this purpose, development of a diamond cold cathode has been started. Up to now, one or two orders of C. B.

Substrate

V. B.

Diamond

Discharge gas

䷿䷣ 丣両丱丈 Poly diamo ndጀfilm

Vac. level

Electron affinity㻡 䋰 㸢 higher㱏

Experimental Experimental 㱏 㱏 value value of of 1-2 1-2 decade decade higher higher than than that that of of conventional conventional cathode cathode metal. metal.

[4] High-Frequency Diamond Transistors  One of the advantages of diamond electronic

Electron Ar + ion

devices is that they have such a high thermal conductivity (20 W/cm.K) and a high band gap (5.47 eV), so only a simple cooling system would be sufficient for diamond devices. Diamond also has a high breakdown field (1u 107 V/cm) and a low dielectric constant (5.7), which are ideal for high power-high frequency transistors. However, p-type diamond has a deep acceptor level (0.37 eV) and hence it is not possible to achieve a high current density. In this project, we were able to solve this issue by using two new device structures for high frequency transistors: (1) a p-i-p structure using hole injection into the channel layer, and (2) a new device structure using the surface conducting layer due to hydrogen termination. Since diamond has far better electronic properties than other semiconductors, its characteristics will be fully utilized toward the fabrication of high-frequency diamond transistors with GHz-range operation frequencies. Furthermore, high-quality heteroepitaxial diamond films have also been developed to reduce production cost of transistors and diamond transistors have been fabricated on such films to demonstrate their high performance.

Discharge gas

Energy diagram of diamo nd/discharge gas

large secondary electron emission efficiency (J) values were confirmed from poly diamond film. Based on these results, development for actual reduce of Vc is now in progress.

[3] Diamond Electron Emitters Using a new nanofabrication technique, nanoscale emitters have been fabricated at a uniformity of less than 8% and a high density of 25 tips/Pm2. It is expected that this will dramatically increase emission current density and total emission current. e e Gatee Insulator

Emitter device

500nm 㪝㪜㩷㪚㫌㫉㫉㪼㫅㫋 㩿㪘㪀

High density and uniform nano-fabrication

㪈㪇 㪄㪉

㪧㪄㪻㫆㫇㪼㪻 㪼㫄㫀㫋㫋㪼㫉

㪈㪇 㪄㪋 㪈㪇 㪄㪌

Vth= 550V

㪈㪇 㪄㪍 㪈㪇 㪄㪎

Emitter device with separate gate-electrode

㪻㫀㫊㫋㪸㫅㪺㪼䋺㪈㪇㪇㱘㫄㩷

㪈㪇 㪄㪊

㪇

Vth= 1500V

㪙㪄㪻㫆㫇㪼㪻 㪼㫄㫀㫋㫋㪼㫉

㪇㪅㪌 㪈㪅㪇 㪈㪅㪌 㪉㪅㪇 㪉㪅㪌 㪊㪅㪇

㪘㫇㫇㫃㫀㪼㪻㩷㪭㫆㫃㫋㪸㪾㪼 䋨㪭㪀

p-i-p Structure of Diamond Transistor

FE properties from P-doped emitter

In an attempt at a separate electrode, a lift-off technique for cathode-stacking electrodes has been

Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 Japan Fine Ceramics research Association Tel +81-3-3519-5715

26

Nanotechnology Program

Carbon Nanotube FED Project

Keywords: Carbon nanotube, Field emission displays R&DTerm:FY2003᳸FY2005 Budget of FY2005:800million yen

Background develop glass-bulb technologies for vacuum sealing, and display technologies for driving the panel by circuit electronics and for evaluating picture quality by measurement. By achieving these technologies, an FED compatible with conventional cathode ray tubes (CRT) will be realized.

This project is developing a high image quality and low power consumption field emission display (FED) by applying carbon nanotubes (CNT) to the electron source. A uniform electron source with flat-film CNT and fine structure triodes for suppressing the deviation of emission is required. For realizing an FED panel, it is also necessary to

Implementation Project Leader Dr.S OKUDA. Mitsubishi Electric Corporation Participating Organizations Japan Fine Ceramics research Association    

Dr. S. OKUDA

Contents 

 Small Investment: Since a FED does not require expensive manufacturing facilities, the amount of investment would be small compared with other devices.

[1]of FED Features The FED  is the most promising flat panel display device because it has the following features: (1) Image Quality: Since the display prince ple is the same with CRTs, FEDs have just the same picture quality as CRTs. FEDs c an present true-color and high- contrast nat ural images over a wide dynamic range as well as quickly moving pictures without blur at a wide viewing-angle. A conceptual figu re of high image-quality is shown below:

  

Phosphor

    

Electrons CNTs Cross Section and Principle of FED Panel

   [2] Carbon Nanotube Electron Source Carbon nanotubes are the most promising ma terial for realizing a large area electron source for a FED because CNT is a natural sharp p in enabling electron emission with a low electr ic field. It is physically and chemically stable enough for limiting the damage from the env ironments. Good quality CNT can be supplied at reasonable cost due to previous preceding Japanese national projects on advanced carbon materials.

Concept of High Image Quality FED

 Low Power: Since a FED has high lum inance efficiency (7 lumens per watt), it can operate at half the power consumption of o ther display devices.

27

An activation technology for CNT surface treatment is another key issue in developing a CNT electron source. This project includes research on the laser irradiation method. The f ollowing figure illustrates the effect of activating a CNT surface by laser:

[3] Issues and Solutions The issues of this project are (1) development of a uniform electron source, and (2) development of panel technologies and evaluating the display quality technologies.

 Development of a Uniform Electron Source The most important problem for developing a CNT-FED is the deviation of pixel luminance caused by deviation of emission properties among cathodes. In order to solve this problem, this project is concentrating on the development of flat CNT films, fine structure triodes, and activation technologies by surface treatment. An example of fabrication of fine triodes using a silicone-ladder polymer is shown in the following figure:

    Without Irradiation With Irradiation   Effect of Activating CNT Surface by Laser 

 Development of Panel Technologies and

Evaluating the Display Quality Technolo

Gate

gies The other issue for developing the FED is panel technologies for vacuum bulbs. This project is focusing on the development of a low cost glass bulb without spacers and low temperature sealing techniques. A novel glass structure for the bulb has been investigated for coping with atmospheric pressure loaded on the front and rear glass panels when they are evacuated without a spacers. A new sealing process below 400 degrees for avoiding the thermal stress caused by the conventional 450 degrees sealing process is also being studied.

Insulator CNT

Glass

Fine Triodes Using Silicone-Ladder Insulator  For developing a uniform electron source by suppressing deviations, increasing the number of emission sites is an effective solution. A fine structure triode is essential for increasing the number of emission sites.

Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 Fine Ceramics Research Association Tel: +81-3-3519-5715

28

Nanotechnology Program

Highly Functional Nanotechnology Glass Project for Photonic Devices Key words: DVD, AWG, Grating

Project Term: from FY2003 to FY2005 Budget of FY2005:220 million yen

Background polarization-dependent loss. As a result, energy savings can be expected for devices used for data storage, optical communication, optical measurement and analytical instruments. In addition, high performance glass products are expected from a pan’s glass industry by applying the results of the Nanotechnology Glass Projec t R&D in the following three areas: data storage, optical measurement and analytical instruments. The final goal of the Nanotechnology Glass Project for Electron Devices is to make the Japanese glass industry more competitive and to create a new markets to benefit humankind in the future.

Technologies which are competitive and will lead the industry have been selected for the Nanotechnology Glass Project for Electron Devices, from the basic technologies developed in the Nanotechnology Glass Project up to Fy2002. This project is being executed as part of the nanotechnology Program of ETI. In this project, the following three devices are being researched and developed : Ĭ a device for optical recording (DVD) what can greatly improve the recording density and transfer rate; ĭ an optical multi-waveguide device that is greatly miniaturized and is highly integrated compared to current products; and Į a device for diffraction grating with high efficiency and low

Organization Project Leader Associate Professor A.MURAKAMI. Tohoku university Participating Organizations Hitachi, Ltd. Hitachi Cable, Ltd. Nippon Sheet Glass Co., Ltd. New Glass Forum

Associate Prof. A. MURAKAMI

Contents In this project, the three technologies invented during the Nanotechnology Glass Project up to Fy2002 are being developed. The goal is to commercialize products by Fy2007. Recording

Ĭ Development of Nanotechnology Glass Thin Films with a Super Resolution Effect for a High Density DVD

Mark

Bluish-violet laser Super resolution f ilm (O=405nm)

(Nanoglass thin film) Recording layer

Higher recording density in optical recording media has continuously been required due to a rapid increase in digital information. A new type of DVD with ultra-high recording density as well as high reliability and low electrical power consumption is being developed using nanotechnology glass thin films with a super resolution effect (shown above right).

Protection layer Substrate

Reflection layer Cross sectional view of Developed Optical Disk Amorphous Grain Boundary (width䋼1nm)

Transmission Eelectron Micrograph of New Nnoglass Thin Film (Co3O4).

Dispersed Grain

10nm

thickness䋺70nm

29

ĭ Development of Nanotchnology Glass for an

Į Development of Nanotechnology Glass for a

Optical Waveguide Device

Large Wavelength Dispersion Device

Optical networks in metropolitan areas and access areas will become very important in the near future. Optical waveguide devices with a wide wavelength range, high functionality, low loss and low cost are greatly needed for net works. For this rason, glass film deposition fabrication technology and optical circuit technology to meet this need are being developed. Cyclic-AWG (arrayed waveguide grating) with low loss and low polarization dependent loss that can be used in the wavelength range of 1.3mm band is expected to be realized (shown below).

 Requirements for spectroscopy are increasing regarding wavelength-divided multiplexing communication and spectrum analyzers, and in the bio- and medical industries. For such applications, mechanical grating is one of the most promising devices. Therefore, deep-grooved diffraction gratings that disperse light with small wavelength differences for large separation angles have been developed. Deep -grooved diffraction grating is a key to realize very compact wavelength demultiplexer devices with high efficiency, low PDL, a wide wavelength range and high reliability. In addition, as fundamental technology to improve nanotechnology demultiplexer performance, glass evaporation, fabrication and evaluation technologies are being investigatedᲢshown belowᲣ.

 Long Haul 1.5Pm

 





Metro 1.5Pm

Central Office

 



Node

  㱗1

㩷

㱗8

Access 1.3Pm

㱗2 㱗3





  

Cyclic-AWG

 



Input slab waveguide

Arrayed waveguide



5m

Diffractive light

!!! Output slab waveguide

Input Signal 㧔1.260Pm 㨪1.360Pm㧕

  

Input waveguide (32ch)

Output waveguide (32ch)

  



 Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 New Glass Forum TEL:+81-3-3595-2775 http://www7.big.or.jp/~cgi19786/ngf/indexe.html

30

+ 0.1~1mm

5~

 

Grating

0.



 

Incident light 1㱘m  3㱘m 

Phase control layer

Microlens array

+

Nanotechnology Program

High-Strength Nanotechnology Glass Project for Displays Keywords: Strengthening, Microstructure, Display Budget of FY2005:210 million yen

R&D Term: FY2003᳸FY2005

Background without decreasing their strength. A new glass strengthening technique with low energy consumption therefore needs to be developed.

A flat display panel has received attention as a wall-hung television for home use and panel size has gradually become larger. According to the technology road map tabletop TVs and wall-hung TVs, an 80-inch plasma display panel (PDP) will be commercialized by 2007. The weight of an 80-inch PDP will be about 60 kg. The weight of glass substrates is about 50 kg, which accounts for most of the total weight of the PDP. Therefore, it will be difficult to use a large and heavy PDP as a wall-hung TV or portable TV in a typical house. In order to reduce the weight of a large size PDP, it is important to make glass substrates thin

Organization Project Leader Dr.K TSUTSUMI Central Glass CO., LTD Participating Organization  Central Glass CO., LTD

᫊ϙჇ 2.Ჴ‫ ء‬ঙ‫ٽ‬ ᢹ

Dr.K TSUTSUMI

Contents – Optimization of heterogeneous phase – A region with different physical properties from its surroundings is considered to be in a “heterogeneous phase”. The heterogeneous phase works as an effective point to stop crack evolution or to change the direction of crack propagation and contribute to glass strengthening. In order to improve bending strength, irradiation conditions were optimized with a femtosecond laser to form a heterogeneous phase.

In order to reduce the weight of glass substrates in various displays, a new practical technique that can strengthen glass substrates at room temperature was developed using a femtosecond pulse laser to form a heterogeneous phase into glass.

Femtosecond pulse laser

Force

Glass surface

Crack

Heterogeneous phase An edge-processing technique was also developed to improve the edge strength of glass substrates. If the practical strength of glass substrates increases 4 times as untreated ones, the thickness of substrates will be half of current glass substrates.

Image of fracture Especially, the femtosecond laser has an advantage to form the heterogeneous phase without damage to glass because of a very short pulse that can ignore an influence of heat diffusion. High-strain point glass, which is used

31

– Processing technique for large substrates – To improve the strength of practical large glass substrates for PDPS (e.g. 32 inch size), techniques to form heterogeneous phase and to carry out edge treatment with the realized processing method should be established. For formation of the heterogeneous phase, effective methods are (1) wide irradiation by interference, (2) multipoint irradiation by splitting a laser beam and (3) high repetition irradiation. The possibility of each method was examined and an appropriate practical technique will be developed. For edge treatment, the effectiveness of the above-mentioned three methods will be examined for practical application.

as a substrate in PDP, was irradiated to form the heterogeneous phase with a femtosecond laser. The average bending strength of irradiated glass increased 2.2 times over non-irradiated glass. The irradiation conditions will be further optimized, and efforts to increase the bending strength of irradiated glass to 4 times as non-irradiated glass will be made.

Heterogeneous phase of different irradiation conditions (Top view)

Heterogeneous phase

–O Optimization of edge-processing conditions – Glass substrate can break due to mechanical damage or thermal shock during the panel manufacturing process, and break points of substrates frequently exist at glass edges. In order to improve the practical strength of substrates, an appropriate edge processing technique is important. Effective methods to improve the edge strength of substrates include (1) grinding and polishing, (2) laser processing to give edges a fire-polished shape and (3) forming of the heterogeneous phase near edges. The practical effectiveness of each technique was examined and edge processing conditions were optimized to improve the practical strength of glass substrates.

Large size glass substrate

Edge treatment     

Processing of large glass substrates



Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 Central Glass Co., Ltd. Tel +81-598-53-3170 http://www.cgco.co.jp/english/index.html

32

Innovative Materials Development Program

Advanced Evaluation Methods Research Project for Nanoscale Semiconductors Keywords: Semiconductor, Evaluation, TEG Budget for FY 2005: 1.8 billion yen

Implementation Term: FY2003 - FY2005ų

Background Japan’s semiconductor materials manufacturers play a major role in the world market, and they will try to continue offering high quality and advanced semiconductor materials. However, they now face difficulties in overcoming methodology limitations to research on individual materials to improve the performance of a comprehensive group of materials due to rapid progress in the creation of nanometer-scale devices and the emergence of complex process. Development of “integrated component development aid tools” is becoming indispensable not only for the comprehensive evaluation of

Semiconductor device electrical characteristics but also to establish the level of device reliability. Such tools can also be used to evaluate the mutual influence between materials as well as materials and processes. The semiconductor materials industry must propose highly reliable components (in terms of both materials and processes) that are suitable for multi-layer circuits for next-generation semiconductors in order for materials suppliers to dramatically the sufficiency ( reduction in the amount of time to market) of developing a number of next-generation semiconductor materials.

Organization Participating Organization䇭 ‫ޓ‬Consortium for Advanced Semiconductor Materials and Related Technologies

䃂Position of CASMAT䇭(A Mutually Complementary Relationship with Other Consortiums)

33

䇭Contents CASMAT is currently working toward the implementation of material evaluation systems through an integrated backend process by introducing adovanced process equipment and evaluation equipment designed for a 300 mm wafer process and a 65 nm nord in its dedicated clean-room. The entire process module utilizes various evaluation equipment in order to provide output feedback to member companies for further development of semiconductor materials.

CASMAT clean-room in operation (approx. 1300 䋛)

TASK 㸇 Development systems that performance consideration materials

and optimization of evaluation can precisely evaluate material at the nanometer level in of the mutual influence between

and between the materials and manufacturing processes which are to be applied to nextgeneration LSI.

TASK 㸈 Tools (called “integrated component development aid tools” or a “High Performance Test Element Group”) will be developed that can assist in the comprehensive evaluation of not only the electrical characteristics of semiconductor but also their reliability.

Such tools will also be used to evaluate the mutual influence between as well as between materials and processes.

TASK 㸉 Proposals for highly reliable components (in terms of both materials and processes) that are suitable for multilayer circuits for nextgeneration semiconductors will be considered based on the technical expertise acquired through the use of

the aforementioned evaluation technologies䇭and development aid tools. Also, putting materials to industrial use through the technical expertise acquired in the course of carrying out this project will be studied.

Multi-layer circuit TEG (300 mm diameter wafer)

Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44- 520-5220 Consortium for Advanced Semiconductor Materials and Related Technologies Tel:+81-42 - 327-8090 http://www.casmat.or.jp/

34

Program for Fundamental Technologies of Advanced Information and Telecommunications Equipment and Devices

Development of Phonic Network Technology Keywords: Photonic network, WDM, Quantum dot, Photonic crystal transration R&D Term: FY2001~FY2006 Budget for FY2005: 840million yen

Background and to establish new technologies as seeds for new industries up to FY2006. It is especially important to develop photonic network technology and optical switching systems that will play an important role for advancing networks. As research and development of a low energy node system includes core technology to realize photonic network systems, devices that will be needed in 5 to 7 years will be developed to establish ultra-high speed and large capacity electronic control optical switching systems. Furthermore, research and develop ment of many core technologies needed for optical control optical switching will be carried out, therebr improving transmission efficiency in the next ten years.

Information and communication technology has been rapidly developing, and network systems are xpected to spread widely in the near future. The establishment of an IT infrastructure by which we can create, communicate and share important information and knowledge without restriction of location and time is learly now in the future. For this reason, further development of ultra-high-speed network technology is indispensable to achieve an IT environment as fundamental technology to create high-speed, high-reliability and high-performance IT systems. This project is part of the information communication foundation advanced program Chaking Eng. tmslation, now. aiming to achieve breakthroughs for next-generation technology

Optical Switching Node

㪩㫆㫌㫋㪼㫉㩷㪫㫉㪸㫅㫊㪸㪺㫋㫀㫆㫅㩷㪪㫇㪼㪼㪻 㪈㪧㪹㪆㫊 㪈㪇㪇㪫㪹㪆㫊

Optical AMP

Optical Switching

Optical Router

WDM demux

Optical Level Controler Optical AMP Array

㪈㪇㪫㪹㪆㫊 Electronic Limit

㪈㪫㪹㪆㫊

䌊䌵䌮䌩䌰䌥䌲 㪤㪈㪍㪇

㪈㪇㪇㪞㪹㪆㫊 㪈㪇㪞㪹㪆㫊

WDM MUX

Electronic Router

㪚㫀㫊㪺㫆 㪈㪉㪇㪈㪉

䌊䌵䌮䌩䌰䌥䌲 䌔㪍㪋㪇 㪚㫀㫊㪺㫆 㪈㪉㪋㪈㪍 㪦㫍㪼㫉㩷㪉㩷㫋㫀㫄㪼㫊㩷㪆㩷㫐㪼㪸㫉

㪚㫀㫊㪺㫆 㪎㪌㪈㪊 Traphic change of 䌊䌐䌉䌘䋨1998-2003䋩

㪈㪞㪹㪆㫊

Optical SW

㪈㪇㪇㪤㪹㪆㫊 㪈㪇㪤㪹㪆㫊 㪈㪐㪐㪉

㪈㪐㪐㪋

㪈㪐㪐㪍

㪈㪐㪐㪏

㪉㪇㪇㪇

㪉㪇㪇㪉

㪉㪇㪇㪋

㪉㪇㪇㪍

㪉㪇㪇㪏

㪉㪇㪈㪇

Tunable LD Multi-㱗Source

㫐㪼㪸㫉 Wavelength Converter

Organization Project Leader Professor Y. NAKANO and Y. ARAKAWA University of Tokyo, Participating Organization Optoelectronic Industry and Technology Development Association Prof. Y. NAKANO

Prof. Y. ARAKAWA

Contents communications. Since further demand for the

[1] Development of Ultra-high-speed and Large Capacity Electronic Control Wavelength Multiple Optical Switching Node Device Wavelength division multiplexingȪWDMȫhas developed along with the increase of network

scale of communications systems is expected, further technical innovation of switching for wavelength and routing lines at the node of core networks is necessary.

35

field, it is planned to challenge not only ongoing practical uses, but also innovative development that could provide a breakthrough beyond existing technologies.

In this project, therefore, innovative optical devices such as optical switches, optical wavelength converters, optical demultiplexers, wavelength tunable light sources, multiple light sources and optical amplifiers will by developed. These devices are indispensable for realization of a node switching time of 1 msec or less and 100 Tbps of throughput for an ultra-high -speed and large capacity electronic control optical switching node. The focus will be research and development of nanoscale, energy saving, integrated and large-scale parallel systems, and low cost to altcw mass production, reliabit, and multiple layer Connectivity will be established, considering that a node system consists of a large set of devices. Then, an attempt will be nade to interconnect optical devices and demonstrate subsystems. Since much research has been conducted on various ways according to today’s study of this Current

Quantum Dot Device Realization of highperformance optical amplifier and semiconductor LD including nanoQuantum Dot structure QD in active 䋭 Quantum Dot Laser䋭 bed

Photonic Crystal Device

䋭 2䌸 2 Optical SW䋭

p

IN

Optical Switch OUT

Realization of High-speed Optical SW by EO effect

Drive Volt. Operation

Burst Optical Signal

n S W Element

Quantum Dot

㪠㩷㪥

䋭 Quantum Dot Amplifier䋭

Wavelength Tunable 䋯Multiple Wavelength Light Source

Optical Field

Control elecnode Optical out

Realization of Micro-photonic circuit by 2D slab and Dispersioncompensating devices

[2] Next-generation Optical Switch Node Development R&D on next-generation systems to be used ten years in the future are indispensable, especially in this field where technologies develop so fast. For this reason, integration technology that enables advanced semiconductor structures like photonic crystal and quantum dot to realize next generation optical switch node. Besides, an innovative elemental technology is also developed to switch the routes of ultra-high -speed optical signal of 100 Gbps as the unit of a packet.

High-efficiency distributed control by photonic crystal couple defective waveguide

Realization of wide-band power Wavelength Tunable/Multiple Wavelength Light Source

䋭 Dispersion Dispersion--compensating device䋭

Contact Infomation New Energy and Industrial Technology Development Organization Electronic and Intormation Technology Development Dept. Tel:+81-44-520-5210 Optoelectronic Industry and Technology Development Association Tel:+81-3-5225-6431 http://www.oitda.or.jp

36

C-band

λ 1λ 2 …λ m…λ n wavelength

䋭 Optical Switch䋭

㪦㪬㪫

Generation of optical comb Tunable LD䋨 active) Super continuum Wavelength Moniter (passive) 㪣㫀㪾㪿㫋 㪪㫆㫌㫉㪺㪼

λ1… λn High-Accuracy Broad Band

䋭 Wavelength Tunable 䋭 Multiple Wavelength Light Source䋭 Light Source䋭

λ1 λ2 λ3 λn

time

Program for Fundamental Technologies of Advanced Information and Telecommunications Equipment and Devices

 Development of Highly-Capacity Optical Storage Technology Keywords: Storage, Disc, Media, Optical near field, Nanopatterned media R&D Term: FY2001᳸FY2006 Budget for FY2005: 570million yen

Background As

the

speed

and

capacity

of

network

optical near fields and related technologies. Basic

communication systems increases, so too does the

devices for generating and detecting optical near

amount of information that Needs to be processed.

fields, storage media and suitable read/write

Large capacity storage systems are indispensable

devices will be developed by the end of FY2006 to

for effective data transmission and recieval To

achieve systems with storage densities of 1

realize such storage systems, this project is

terabit/inch2.

developing storage techniques utilizing advanced

㪈㪇㪇㪇

Recording (Gbpsi) 㪩㪼㪺㫉㪻㫀㫅㪾 Density 㪛㪼㫅㫊㫀㫋㫐䋨㪞㪹㫇㫊㫀䋩

䋱㫋㪼㫉㪸㪹㫀㫋㪆㫀㫅㪺㪿㪉

OPTICAL AND MAGNETIC HYBRID RECORDING

㫇㫉㫆㪹㪼㩷㪿㪼㪸㪻

DVD

㫉㪼㪺㫆㫉㪻㪼㪻㩷 㫇㫀㫋㫊

optical diffraction limit

㫆㫇㫋㫀㪺㪸㫃㩷㫅㪼㪸㫉㪄㪽㫀㪼㫃㪻

RAM䋨Removable䋩

MO

㪈 㪈㪐㪐㪇

㪈㪐㪐㪌

㫄㫆㪻㫌㫃㪸㫋㫆㫉

䇭䇭 multi-value/multi-layer

HD-DVD

HDD GMR

㫇㫉㫀㫊㫄㩷㪹㪼㪸㫄㩷㫊㫇㫃㫀㫋㫋㪼㫉 㫊㫌㫊㫇㪼㫅㫊㫀㫆㫅

hologram

UD-DVD

㪈㪇

㫇㪿㫆㫋㫆㪄㪻㪼㫋㪼㪺㫋㫆㫉

䇭OPTICAL NEAR FIELD

para magnetic limit

㪈㪇㪇

㪻㫀㫆㪻㪼㩷㪣㪸㫊㪼㫉

䋨quantum optical memory䋩

㪻㫀㫊㫂 㫄㫆㫋㫀㫆㫅 㫄㪼㪻㫀㫌㫄

㪉㪇㪇㪇

㪉㪇㪇㪌

㪉㪇㪈㪇

㪉㪇㪈㪌

㪉㪇㪉㪇

㪰㪼㪸㫉

High Density Storage System

㪇㪅㪈

Roadmap for Optical Memory

Organization Project Leader Professor M. Ohtsu University of Tokyo, Participating Organizations Optoelectronic Industry and Technology Development Association National Institute of Advanced Industrial Science and Technology Prof. M. OHTSU

Contents [Ძ] Near-field Basic Technology Development In order to realize ultra-high density optical storage, it is important to develop techniques for designing near-field recording/reading heads and media, nanofabrication techniques, and nanopattern measurement techniques. In this project, accordingly, simulation techniques are being developed considering the interactions between optical near fields and nanoscale materials. Such techniques will be used as a design tool to develop near-field

high-speed reading heads. Nanoscale threedimensional fabrication techniques with high reproducibility are also being developed In addition high sensitivity reading heads utilizing polarization for nanopattern measurement, will be developed, as will detection techniques for a small optical signal that comes from the interaction between light and nanoscale material with high resolution, high speed, and high sensitivity.

37

㪦㫇㫋㫀㪺㪸㫃㩷㫅㪼㪸㫉㩷㪽㫀㪼㫃㪻 㫇㫃㪸㫊㫄㫆㫅 㪪㫀

smaller in diameter, and tracking of the head

㪤㪼㫋㪸㫃

㪦㫇㫋㫀㪺㪸㫃㩷㫅㪼㪸㫉㪄㪽㫀㪼㫃㪻

cannot be precisely controlled by the mechanical

㪥㪼㪸㫉㪄㪽㫀㪼㫃㪻㩷㫆㫇㫋㫀㪺㪸㫃㩷㫇㫉㫆㪹㪼

head accuracy of conventional media. To overcome

㪤㪼㫋㪸㫃

㫄㫀㫉㫉㫆㫉

these problems, nanopatterned media are being

㪪㫀

㪦㫇㫋㫀㪺㪸㫃㩷㫎㪸㫍㪼㪾㫌㫀㪻㪼

developed. Nanopatterned media have memory

㪥㪸㫅㫆㪄㪽㪸㪹㫉㫀㪺㪸㫋㫀㫆㫅

㪪㫀㫄㫌㫃㪸㫋㫀㫆㫅

cells that are uniform in thems of size and are 㪤㫀㪺㫉㫆㫃㪼㫅㫊

㪦㫇㪸㫈㫌㪼㩷㪽㫀㫃㫄 㪘㫇㪼㫉㫋㫌㫉㪼

divided by non-recordable material and have

㪦㫇㫋㫀㪺㪸㫃㩷㫅㪼㪸㫉㪄㪽㫀㪼㫃㪻

㪥㪸㫅㫆㪄㫇㪸㫋㫋㪼㫉㫅 㫄㪼㪸㫊㫌㫉㪼㫄㪼㫅㫋

position information. To achieve high density, for

Near-field Basic Technology Development

example, new recording material for optical and

[㧞] Near-field Storage Media Development One

terabit/inch2

magnetic hybrid recording using optical near fields for recording and a high sensitivity

storage media needs altered

magnetic sensor for reading will be investigated.

characteristics for optical near fields of 30nm or [Ჭ] Near-field Read/Write Technology One

terabit/inch2-class

optical

near-field

reproducing

method

will

be

developed.

recording requires a device that can generate an

Head-to-disk interface technology for a low

optical spot having a diameter of several tens of

flying-height slider and a system that can detect

nanometer or smaller with high-efficiency. Hybrid

subtle

recording technologies that combine a recording

positioning will also be developed.

tracking

displacement

for

precision

method using this device and an appropriate 㪟㫐㪹㫉㫀㪻㩷㫉㪼㪺㫆㫉㪻㫀㫅㪾㩷㫊㫐㫊㫋㪼㫄 㪩㪼㪺㫆㫉㪻㫀㫅㪾㩷㫊㫀㪾㫅㪸㫃

㪩㪼㫇㫉㫆㪻㫌㪺㪼㪻㩷㫊㫀㪾㫅㪸㫃

㪜㫃㪼㪺㫋㫉㫆㫅㪄㪹㪼㪸㫄㩷㫄㪸㫊㫋㪼㫉㫀㫅㪾 㪛㫀㫆㪻㪼㩷㫃㪸㫊㪼㫉

㪦㫇㫋㫀㪺㪸㫃㩷㫅㪼㪸㫉㪄㪽㫀㪼㫃㪻

㪦㫇㫋㫀㪺㪸㫃㩷㫅㪼㪸㫉㪄㪽㫀㪼㫃㪻㩷㪾㪼㫅㪼㫉㪸㫋㫀㫅㪾㩷㪻㪼㫍㫀㪺㪼

㪦㫇㫋㫀㪺㪸㫃㩷㪸㫅㪻㩷㫄㪸㪾㫅㪼㫋㫀㪺㩷㪿㫐㪹㫉㫀㪻㩷㫉㪼㪺㫆㫉㪻㫀㫅㪾㩷㪺㪼㫃㫃

㪩㪼㫇㫉㫆㪻㫌㪺㫀㫅㪾㩷㪻㪼㫍㫀㪺㪼

㪥㪸㫅㫆㪄㫀㫄㫇㫉㫀㫅㫋

㪩㪼㪺㫆㫉㪻㫀㫅㪾㩷㫄㪼㪻㫀㫌㫄

㪤㪸㫊㫋㪼㫉㩷㪻㫀㫊㫂

㪧㫆㫊㫀㫋㫀㫆㫅㫆㫉 㪩㪼㪺㫆㫉㪻㫀㫅㪾㩷㫄㪼㪻㫀㫌㫄 㪪㫃㫀㪻㪼㫉

㪥㪸㫅㫆㪄㫇㪸㫋㫋㪼㫉㫅㪼㪻 㫄㪼㪻㫀㪸

Near-field Optical Media Technology Development

Near-field Optical Read/write Technology Development

Contact Information New Energy and Industrial Technology Development Organization Electronic and Intormation Technology Development Dept. Tel:+81-44-520-5210 Optoelectronic Industry and Technology Development Association Tel:+81-3-5225-6431 http://www.oitda.or.jp National Institute of Advanced Industrial Science and Technology Tel:+81-29-861-9000 http://www.aist.go.jp/ 

38

Program for Fundamental Technologies of Advanced Information and Telecommunications Equipment and Devices

MEMS Project Keywords: MEMS, RF, Optical, Sensor R&D Term: FY2003㨪FY2005 Budget for FY2005: 830 million yen

Background MEMS (Micro-Electro-Mechanical-Systems) technology makes the manufacture of high value-added components, which are excellent in terms of smallness, advanced functions and energy saving, possible. Therefore, expectations regarding its use as a new basis technology for supporting manufacturing in Japan are rising. MEMS is used for part of the acceleration sensor in automobiles, the heads of ink-jet printers, etc. at present. Moreover, it is considered that 3-dimentsional MEMS having superior performance and a complex structure will be applied to optical communication and high speed radio communication and so on in the future.

This project is being implemented as part of the Focus 21 program, and it aims at developing the manufacturing technology necessary for a RF (radio frequency) MEMS switch, a 3-dimensional optical cross connect MEMS SW and an ultra-small MEMS sensor (acceleration sensors and so on), such products are expected to represent large markets in the near future at the stage of practical use. Moreover, this project aims at building an environment for the development and production of new MEMS products utilizing the technologies developed in this project for foundry service.

Organization Participating Organizations OMRON Corporation Olympus Corporation Matsushita Electric Works, Ltd.

Contents (3) Low loss package technology

1. Development of RF MEMS Switch Manufacturing Technology An RF MEMS switch (Fig.1) requires a higher level of accuracy and greater reliability. To achieve this goal , this research has three R&D themes. (1) High precision process technology In order to stabilize the resistance variation at contact points, deposition will be reduced and etching rate variation and dimensional accuracy will be kept under 1%. (2) Anti-sticking technology at contact points RF MEMS switches will require a long contact life of more than 109 cycles compared to 109 cycles for conventional switches, so tough contacts are indispensable in terms of physical and electrical impacts. It is important for assuring reliability to improve the process to form contacts with the material that fulfills certain conditions (hardness, resistance, etc).

Illogical packages at the RF band deteriorates the high-frequency property of devices. The chip-size package method solves this problem and makes devices with a yield loss of under 0.1dB @10GHz. possible.

㪤㫆㫍㪸㪹㫃㪼㩷㪼㫃㪼㪺㫋㫉㫆㪻㪼 㪩㪼㫃㪼㪸㫊㪼㩷㫊㫇㫉㫀㫅㪾 㪚㫆㫅㫋㪸㪺㫋㩷㫊㫇㫉㫀㫅㪾 㪇㪭 㪚㫆㫅㫋㪸㪺㫋 㪪㫎㫀㫋㪺㪿㫀㫅㪾㩷 㪺㫐㪺㫃㪼㫊 㪕䋱䋰䋹

㪝㫀㫏㪼㪻㩷㪼㫃㪼㪺㫋㫉㫆㪻㪼 㪉㪋㪭

Fig. 1 Cross Section View of RF MEMS Switch

39

㪚㫆㫅㫋㫉㫆㫃㫃㪸㪹㫀㫃㫀㫋㫐㩷㫆㪽 㩷㫄㫀㫉㫉㫆㫉㩷㪸㫅㪾㫃㪼㪑㩷㪓㪉㩷㫄㪻㪼㪾㪅 䊚䊤䊷䈱ⷺᐲ೙ᓮᕈ䋺 䋼

3. Development of Manufacturing Technology for Ultra-small Sensors Wafer-level packaging of MEMS for ultra-small sensors (Fig.3), is being developed as follows. (1) Low-temperature wafer bonding technology Wafer bonding technology that enables bonding of a sensor fabricated wafer to a package wafer at room temperature with high alignment accuracy of r 2Ǵm is being developed.. (2) High aspect ratio through hole DRIE and electroplating technology High aspect ratio (50: diameter of 10Ǵm, depth of 500Ǵm) through hole DRIE technology and electroplating technology to fill packaging wafer holes is being developed.. (3) Integration of sensor and electric circuits Assembling technology that integrates packaged sensors and electric circuits (ICs and passive components) for signal processing is being developed. In order to realize such integration, low temperature bump bonding is very important. (4) Construction of a consistent process By developing the above described technologies, a consistent process for MEMS wafer-level packaging will be constructed. As a result, ultra-small sensors with a package volume of less than one-tenth and a cost of less than one-half of conventional sensors packaged in resin or ceramics will be developed.

㪝㫃㪸㫋㫅㪼㫊㫊㩷㫆㪽㩷㩷㫄㫀㫉㫉㫆㫉㪑㩷㪓㪌㪇㫅㫄 䊚䊤䊷㕙䈱ᐔမ ᕈ䋺 䋼㪌㪇㫅㫄 㪤㫀㫉㫉㫆㫉 㫊㫀㫀㫑㪼 㪑㩷㪈 㪇㪇 㱘㫄 㩷㫀㫅 㩷㪻㫀㪸㪅 㪫㫆㫉㫊㫀㫆㫅㪄㪹㪸㫉

Fig. 2 Schematic Diagram of 3-dimenstional Optical    Cross-Connect MEMS SW 2. Development of Manufacturing Technology for a 3-Dimenstional Optical Cross-Connect MEMS SW Three dimensional MEMS process technology is being developed for a practical 3-dimenstional optical crossconnect MEMS SW (Fig. 2) .as follows. (1) High precision and three-Dimensional MEMS fabrication technology Precise fabrication technologies are being developed in order to achieve an optical insertion loss of less than 3 dB and mirror flatness of less than 50nm across 100 Œ᳧ square. (2) High precision control technology A control technique for mirror movement with an accuracy of less than 2m degrees in angle has been developed. Simulation technology that can handle the dynamic motion of the mirror and integration technology for an MEMS mirror with a mirror displacement sensor and IC for feedback control were critical key factors. (3) Measurement and evaluation technologies for reliability Evaluation and measurement technologies have been developed in order to achieve a mirror with a reliability of more than 109 times rotations at room temperature. Analyses of temporal change of the mechanical and optical characteristics in the MEMS mirror array were key factors.

㪫㪿㫉㫆㫌㪾㪿㩷㪿㫆㫃㪼㩷 㪼㫃㪼㪺㫋㫉㫆㫇㫃㪸㫋㫀㫅㪾 䇭䇭䇭㪛㫀㪸㫄㪼㫋㪼㫉䋺㪈㪇㱘㫄 䇭䇭䇭㪛㪼㫇㫋㪿䋺䋼㪌㪇㪇㱘㫄

㪩㫆㫆㫄㩷㫋㪼㫄㫇㪼㫉㪸㫋㫌㫉㪼 㪹㫆㫅㪻㫀㫅㪾㩷 㪘㫃㫀㪾㫅㫄㪼㫅㫋㩷㩷㩷 㪸㪺㪺㫌㫉㪸㪺㫐䋺㪉㱘㫄 㪧㪸㪺㫂㪸㪾㪼㩷㫎㪸㪽㪼㫉 㪪㪼㫅㫊㫆㫉㩷㪺㪿㫀㫇 㪧㪸㪺㫂㪸㪾㪼㩷㫎㪸㪽㪼㫉 㪠㪚㩷㪺㪿㫀㫇

Fig. 3 Schematic Diagram of Wafer-level Packaging

Contact Information New Energy and Industrial Technology Development Organization Machinery System Technology Development Dept Tel:+81-44-520-5240 OMRON Corporation  Tel:+81-77-474-2972Ტhttp://www.omron.co.jp/index2.Უ Olympus Corporation Tel:+81-26-641-4179 Ტhttp://www.olympus.co.jp/jp/Უ Matsushita Electric Works, Ltd. Tel+81-6-6908-0527Ტhttp://www.mew.co.jp/Უ

40

Basic Technology Research Promotion

Research on High-Resolution and High-Speed Composition Analysis of Nanometer-Thick Films Keywords: Thin film, Surface analysis, RBS R&D Term: Fy2001 ~ Fy2005 Budget of Fy2005: 60million yen

Background gnetic heads with high depth resolution, high-speed measuring, and non-destructiveness without standard reference materials. It is expected that this technique will contribute to significantly strengthening the process control technology of the semiconductor and related industries in Japan.

A high-resolution and high-speed composition analysis technique and system for ultra-thin films based on RBS (Rutherford Backscattering Spectrometry) is currently being developed. The system makes it possible to analyze the composition of nanometer-thick thin films such as high-k gate dielectric films and thin film ma

Organization Project Leader Dr.A KOBAYASHI KOBE STEEL, LTD. Participating Organization KOBE STEEL, LTD. Dr.A. KOBAYASHI

Contents In this system, a cryogen-free superconducting magnet is used to create a high magnetic field, which makes it possible to collect all ions scattered to any azimuthal angles, and to achieve a high depth resolution and high-speed measurement. Fig. 2 shows a schematic view of the system. It consists of an accelerator to generate an ion beam, a spectrometer using the superconducting magnetic, a signal processing controller, and a PC. Control, measurement, and data analysis software have also been developed.

[1] Introduction

accelerator part

-PrincipleRBS is based on collisions between atomic nuclei of projectile ions and atoms in films, and occurs when high-energy ions are incident onto incident ion scattered ion E0, M1 a specimen (Fig.1). 䇭 E1 scattered ion 䇭 E2 The atomic mass of α β the incident ions should be small, such M2 as helium, so that z the specimen is hardly damaged by M2 ion irradiation. Some Fig 1. Principle of RBS incident ions are elastically scattered by target atoms, and the energies of the scattered ions depend on the atomic mass of the target materials. Moreover, the ions lose their energies when they pass through the specimen. The amount of energy loss depends on the penetration depth of the ions below the surface. Thus, the distribution of scattered ion energies has information on the composition and the depth profile of the constituent atoms in the specimen. Measuring scattered ion energies with high resolution makes possible a film analysis with a monolayer depth resolution. RBS is a reliable and quantitative technique for composition analysis because the collisions strictly obey a well-known physical formula that is referred to as Coulomb scattering. -Configuration-

ion source high voltage generator control and signal processing part beam transfer

Superconducting magnetic spectrometer part

ion detector superconducting magnet

scattered ions specimen

controlling and measuring PC

Fig. 2. Schematic View of System. [2] Equipment -AcceleratorThe accelerator mainly consists of an ion source, which ionizes helium gas, a high-voltage generator (HVG; max 500 kV), and an acceleration tube. A highly stable and compact HVG of the Cockroft-Walton type, has been newly

41

developed to achieve a high resolution RBS measurement and to make the system compact enough to install in a laboratory. This vertical style HVG is 30 % smaller in volume than that of a conventional one, and its stability is less than r5.0 × 10-4 at the setting value. This type of accelerator has already been installed in a new model high-resolution RBS system produced by Kobe Steel, Ltd. -Superconducting magnet spectrometerA cryogen-free superconducting magnet with ferromagnetic pole pieces is used to generate a vertical uniform magnetic field up to 2 Tesla in a vacuum chamber of φ 340 mm × 600 mm. The magnetic field distribution was designed using both a 3D magnetic field and an ion trajectory simulator. The magnetic field uniformity is sufficient to converge the scattered ions efficiently.

Fig. 4. Photograph of System under Development. This part contains a sample transfer system, a nonmagnetic sample stage and an ion detector, and it is presently under development.

incident ion 㪉㪅㪇㪇㪊

㪌㪇㪇

㪉㪅㪇㪇㪎 㪉㪅㪇㪈㪈 㪉㪅㪇㪈㪌

㪋㪇㪇

㫑㩷㩿㫄㫄㪀

[3] Software development It is necessary to develop a new algorithm to analyze positional spectra and calculate the film, because the optics under development, where a specimen and a detector are in the same magnetic field, is unprecedented. The algorithms for positional spectra and the composition analysis are being developed in cooperation with Kyoto University.

㪉㪅㪇㪈㪐

ion detector aperture

㪊㪇㪇

㪉㪅㪇㪉㪊 㪉㪅㪇㪉㪎 㪉㪅㪇㪊㪈 㪉㪅㪇㪊㪌 㪉㪅㪇㪊㪐

㪉㪇㪇 scattered ion trajectory

㪈㪇㪇

㪉㪅㪇㪋㪊 㪉㪅㪇㪋㪎 㪉㪅㪇㪌㪈

specimen

㪉㪅㪇㪌㪌 㪉㪅㪇㪌㪐

㩷

㪇

5

㪇

㪋㪇

㪏㪇

㪈㪉㪇

2.5x10

㪈㪍㪇

+

400 keV He ψ HfO2 (3nm) / Si

㪩㩷㩿㫄㫄㪀

5

counts / mm

Scattered Ion Trajectory (calculated)

Hf

B = 2T L = 200 mm l = 100 mm

2.0x10

Fig. 3. Magnetic Field Distribution (measured) and

5

1.5x10

5

1.0x10

4

5.0x10

O Si

0.0 100

120

140

ρd (mm)

160

180

Fig. 5. Simulated Positional Spectrum of a HfO2 Film on Si Substrate

Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 KOBE STEEL, LTD. Tel +81-78-992-5613 http://www.kobelco.co.jp/p047/p047e.htm

42

Basic Technology Research Promotion

Rugate Filters

Keywords: Filter, Reflection, Transmission R&D Term: FY2001᳸FY2005 Budget of FY2005: 10million yen

Background The design and manufacturing of rugate filters (refractive index of the filters periodically change into the direction of the film thickness) are being researched and developed. This project will make it possible to manufacture ideal characteristic optical filters without restriction conditions in the filter design.

By applying the results of this project, new world class fluorescent analysis products used for gene analysis will be created. By pioneering a new market for fluorescent analysis, the international competitiveness of Japanese industry will be improved and a social contribution will be made.

Organization Project Leader Mr.K KAWAMATA Olympus Corporation Participating Organization Olympus Corporation

Mr.K. KAWAMATA

Contents ᲧUsesᲧ Optical filters are applied for various uses, for example, cameras, microscopes, displays and telecommunications. Optical filters are key devices, and the performance of filters should be made higher to improve picture quality or transmission efficiency. This project aims to improve optical filter performance, especially for fluorescent analysis in gene analysis. The bio industry market is about 1,300 billion yen, and will expand to 25,000 billion yen in 2010. The market related to genome gene analysis will also grow to 6,000 billion yen in 2010, and will expand further to 26,000 billion yen by 2020. Fluorescent analysis is widely used in gene analysis, and improvement of optical filter performance for fluorescent analysis connects directly with speeding up fluorescent analysis and improving performance.

[1] Optical Filters ᲧConventional technologiesᲧ Optical filters are used when the light of a specific wavelength is selectively transmitted or reflected. The actual filters are designed based on unique refractive indices of film materials. Two materials for high and low refractive indices are usually used, and only the thickness of layers is optimized. The filter for a needed performance may not be able to be designed. Several theories for optimizing thickness of layers have been published, and commercialize software for the design of optical filters has already been realized. The technology for optimizing the thickness of layers has advanced enough and cannot be expected to advance much further in the future, that is, the performance of optical filters cannot be expected to advance largely by using conventional technologies.

43

Example of fluorescent

=?Rugate Filters

developed. The performance of developed filters with step-like index layers is almost equal to that of rugate filters. As refractive indices of layers need not be varied continuously, it will be possible to manufacture ideal characteristic filters in large quantities at low cost. A technique for manufacturing filters has also been developed. In place of unique refractive index layers of film materials, arbitrary refractive index layers are used for developed filters. A precise control technique for film thickness is also used for manufacturing these filters.



analysis

ᲧIndex profileᲧ Rugate filters are ideal optical filters that have been mathematically obtained. The refractive indices of rugate filters change in the direction of the film thickness periodically and continuously. There is no ripple of a reflection or transmission spectrum of the filter. By using rugate filters, 100% of demanded wavelength light can be detected without other wavelength light.

=Ჭ?+nnovation and Effect ᲧEffect of rugate filterᲧ The rugate filer is a basic technology for Japanese industry. It will be used not only for biological analysis but also for various optical instruments, displays, and telecommunications. Improvement of performance will have a great impact on the expansion of the market demand in these areas. ᲧEffect of arbitrary refractive indexᲧ Conventional optical filters are designed onl y by optimizing the thickness of layers. After arbitrary refractive index layers are available, optical filters will be designed free from the restriction of index. Arbitrary refractive index layers will also be used for anti-reflection coatings and other optical coatings. Improvement of performance of optical coatings or reducing the number of layers may become possible. Optical filters will become more and more important in the future. The results of this project will have an effect on all fields where optical thin film is used. This project will be extremely effective for basic technological strength reinforcement of private organizations. 

Index profile

Reflectance

 ᲧTechnologyᲧ Because it is too difficult to continuously vary the refractive indices of layers, rugate filters have not been used in the industrial world. In this project, a technique for filter design has been

 Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 Olympus Corporation Tel +81-426-91-7210㩷 㩷 http://www.olympus.co.jp/

44

Basic Technology Research Promotion

Development of Nanoparticle and Nano-Thin-Film Phosphors for FED KeywordᲴnano-particle, nano-thin-film, phosphor R&D TermᲴFY2001᳸FY2005

Budget for FY2005Ჴ20 million yen

Background phosphor with a low refractive film. It is possible to raise the integrity of FED using this result. This research will contribute to increased competitiveness in the creation of new display products, a field in which Japanese industry leads the world.

In this project, the goal is to produce phosphors for field emission displays (FED) as the nextgeneration display by making phosphors using nanostructuring. A low-accelerating phosphor is produced by adding conductivity to a nanoparticle phosphor and combining the nano-thin-film

Organization Project Leader Dr.H Murakami ULVAC, Inc. Participating Organization ULVAC, Inc. 

Dr. H. MURAKAMI

Content [1] Nanoparticle Phosphor The need for a nanoparticle 

FED have required operation low-voltage.

Combustionᴺ

Problems of low-voltage drive with current phosphors

are

particle

surface

generated

in the milling process and charge up

by a alowly

accelerating

for

these

solving

Y(NO3)3 or Gd(NO3)3 +Eu(NO3)3 + Zn(NO3)2 in water

roughening

electron. A method

problems

is

to

mixture

produce

at 100㫦C in air

nanoparticles with good crystallinity. The

Electroconductive

addition

glutamic acid as gelling agent

at 100㫦C in air

nanoparticle

࠽ࡁ☸ሶⰯశ૕ߩSEM౮⌀

phosphor

Nanoparticle

 A nanoparticle phosphor was produced by a solution method using metal salt and organic acid. The

1500

2500 Y2O3Eu

phosphor became useless during milling and it Luminance (cd/m2)

was easy to passed an electron. Electroconductive addition was advanced in order

to

improve

nanoparticle

Y2O3Tb 2000

Y2O3EuZn

Luminance (cd/m2)

The size of the nanoparticle is about 50nm.

Gd2O3Eu

1000

Gd2O3EuZn

500

phosphor.

Y2O3TbZn Gd2O3Tb

1500

Gd2O3TbZn

1000

500

performance The luminance of red phosphor

0

0 0.0

0.5

Y2O3:Eu and green phosphor Y2O3:Tb increased

1.0

1.5

2.0

2.5

3.0

voltage (kV)

two-fold.

Light

emission

0.0

0.5

1.0

1.5

2.0

2.5

3.0

voltage (kV)

and

chromaticity

of

a

nanoparticle phosphor are in the range that can be used for a display. 

45

Y2O3(622)

Y2O3(440)

Y2O3(431)

Y2O3(400)

Y2O3(332)

Y2O3(222)



Y2O3(411)

Y2O3(211)



ၮ᧼ടᾲ 500͠

---ၮ᧼ടᾲήߒ 䎃䎱䏒䎃䎶䏘䏅䏖䏗䏕䏄䏗䏈䎃䎫䏈䏄䏗䏌䏑䏊 䎃䎶䏘䏅䏖䏗䏕䏄䏗䏈䎃䎫䏈䏄䏗䏌䏑䏊䎃䎘䎓䎓䛐 ---ၮ᧼ടᾲ 500͠

ၮ᧼ടᾲήߒ

䎋䎃䏆䏓䏖䎃䎌

䎋䎃䏆䏓䏖䎃䎌

 

䎕䎛

   

䎖䎓

䎗䎓

⊒శノᐲ䇭㩿 㪺㪻㪆㫄㪉㪀

䎕䎓

䎕䎜

䎖䎓

䎖䎔 䎕T

䎖䎕

䎖䎖

䎖䎗

㪌㪇㫅㫄㩷ၮ᧼ടᾲ㪌㪇㪇㷄 䎚䎓 䎛䎓 㪈㪍㪇㫅㫄㩷ၮ᧼ടᾲ㪌㪇㪇㷄 㪈㪍㪇㫅㫄㩷ၮ᧼ടᾲή䈚

㪏㪇㪇 䎘䎓

䎙䎓

䎕T

㪍㪇㪇 㪋㪇㪇 㪉㪇㪇 㪇



㪇

㪇㪅㪌

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㪉㪅㪌

㪊

 

Improvement of light emission efficiency

[2] Nano-Thin-Film Phosphor

By forming low refractive film on glass substrate,

The necessity of nano-thin-film

light emission efficiency from the phosphor is

The excitation efficiency of light emission

improved. The leak from the substrate edge

worsens due to charge up of phosphor when film

decreases using refraction of the light. A porous

thickness is thick in order to drive the low-voltage

silica solution (ISM-2) is used for the low

needed for FED. The phosphor must be thinned

refractive material. The manufacturing method

for the passage of a slowly accelerating electron

for a low refractive film is very simple. Only by

and the sufficient light emission.

spinning and firing the solution, the thin film of



low refractive can be formed. It is useful for a



light emission luminance increase.

















Nano-thin-film for cathodeluminescence (R,G,B)



material



simultaneously using the sputtering method and



EB method. In time, the crystallinity of the



phosphor improves by substrate heating, and



body

and

activation

Fire



Nano-thin-film phosphor can be produced by depositing

φSpin and

light emission luminance also increases.

Light Emission Efficiency In the future, a material search for further

The cathodeluminescence of nano-thin-film

improvement of light emission luminance and

phosphor was confirmed using Y2O3:Eu (R),

color purity and lower in the drive voltage will be

Y2O3:Tb (G) and Y2O3:Tm (B).

carried out, and nanostructure phosphor for FED will be developed.

 Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 ULVAC, Inc. Tel:+81-298-47-8781 http://www.ulvac.co.jp/

46

Basic Technology Research Promotion

Study of GaN on Si Power Devices Keywords: MOVPE, Epitaxialgrowth, GaN, HEFT, SBD R&D Term: FY2001᳸2004

Background From the viewpoint of environmental preservation, saving energy is one of the most important issues in industry. However, energy saving for power supplies, by lowering operating power consumption for example, has developed slowly because of insufficient Si device properties and an overflow to the market of low efficiency but low-cost power supplies. GaN and SiᲽ are excellent candidates for next-generation device materials because of their superior properties (i.e. a high breakdown electric field and high electron

mobility) compared to that of Si. Though a high level of device performance using these materials has been reported, there has been no method for low cost device fabrication that replaces Si devices. In this research, we will develop growth technology for group III nitrides on Si and fabricate low loss GaN on Si electric devices. The second target is growth on a large-diameter wafer (>5” Φ) that enables realization of low cost devices identical to those of Si.

Organization Project Leader Mr.K Ohtsuka SANKEN ELECTRIC CO., LTD Participating Organization SANKEN ELECTRIC CO., LTD

Mr. K. OHTSUKA

Contents than 1μm even on a 5” Φ Si wafer (Fig. 1). To date, a GaN epitaxial layer with a dislocation density less than 5×109cm-2 and electron mobility higher than 1600 cm2/Vs has been developed. Further, wafer bending of a 2.5μm-thick GaN layer on a 5”Φ Si wafer is less than 40μm and the value is small enough for the wafer process.

The R&D strategy for this project is divided into three themes as follows: ȷ Study of epitaxial growth ȷ Study of device process technology ȷ Study of an electric circuit system In the epitaxial growth study, the goal is establishment of GaN on a large-diameter Si wafer (> 5”Φ) using growth technology with high crystalline quality as well as that of GaN on a sapphire wafer. In the study of device process technology, development of HFET and SBD devices for power supply use is progressing. A breakdown voltage (BV) of 300V and 0.2ƺmm2 of on-resistance (Ron) are the target for HFET, and 600V of breakdown voltage is the target for SBD development. In the study of an electric circuit system, the goal is establishment of circuit system technology that substitutes a GaN device for a Si device. [1] Study of Epitaxial Growth In the case of GaN growth on a Si wafer, GaN/Si intermixing and crack generation, originating from large lattice mismatch and/or differences in the coefficient of linear expansion, are serious problems. H-termination of Si wafer surface and AlN/GaN multi-interlayer insertion makes it possible to grow a crack-free GaN layer thicker

Fig. 1 GaN Layer Growth on Si Wafer [2] Study of device process technology HFET and SBD device process technology for Ron reduction and increased BV has been developed. The BV of the HFET device (structure:

47

efficiency (91%) that is higher than that of a Si FRD. Further, the surge ripple that is always seen on a Si FRD has not been observed.For a rectifier diode in a PFC circuit, GaN SBD is favorable because of its high cost performance.

25nm-thick Al0.25GaN/ 2μm-thick GaN/ interlayer/Si wafer) is higher than 1000V. Fig. 2 shows the transition of BV and Ron of GaN on Si HFET devices. A level of 1/25th of the Ron compared with that of the Si theoretical value has already been obtained for the small size chip.

Fig. 3 GaN and SiC SBD Properties 



Fig. 2 Transition of HFET BV and Ron

Ü Conclusion Ყ GaN on a Si device showed higher performance than a Si device, and therefore, expectations regarding device application have become higher. However, there are problems such as current collapse, large leakage current and poor reliability. We are planning to accelerate R&D of GaN on a Si device toward target manufacturing as well as NEDO's.

  [3] Study of an electric circuit system A normally-on mode GaN HFET device is different from the normally-off mode Si-MOS FET device now widely used. Consequently, it is necessary to establish circuit technology for normally-on mode devices. Fig. 3 compares the operation properties of the developed GaN SBD and a commercial SiC SBD mounted on a PFC circuit. Both SBDs show almost the same

 Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 Sanken Electric Co.,Ltd. Tel +81-48-487-6135

http://www.sanken-ele.co.jp/

48

Basic Technology Research Promotion

Development of a Drug Delivery System Making Use of Biodegradable Nanocomposite Polymer Particles Keywords: DDSŴNanocompositeŴInhalation R&D term: FY2001᳸2004

Background In this project, particle design and preparation of drugs having higher performance in terms of absorbility, release control and stabilization than conventional methods will be realized by granulation of nanocomposite particles consisting of drug-encapsulated biodegradable polymer nanospheres. This technology is expected to be very useful for developing inhalation

drugs in place of conventional injection, advanced transdermal drugs and functional cosmetics with controlled release, etc. Applying the results of this project, it is attempted to contribute to the welfare of the human beings by developing the new markets on a worldwide scale

Organization  Project Leader Dr. YOKOYAMA HOSOKAWA POWDER TECHNOLOGY RESEARCH INSTITUE Participating Organization HOSOKAWA POWDER TECHNOLOGY RESEARCH INSTITUTE

Dr. T. YOKOYAMA

Contents Water soluble provitamin

[1] DDS with Nanocomposite Particles DDS (Drug Delivery System) is a method to deliver a certain amount of a suitable drug directly to the right place at a desired speed and enables efficient administration of drugs minimizing side effects. As a method for DDS, the encapsulation of drugs in nano sized particles of biodegradable polymer PLGA (lactide-glicolide co-polymer) has considerable potential for the development of new high-performance drugs with as described below. 1) Improvement of absorbility  Nanosized particles generally have much higher absorbility than micron sized ones and greater specific surface area which enables better control of particle surface properties like affinity and adhesiveness to human organs and residence time in the body. 2) Control release Since biodegradable drug-encapsulated nanospheres are gradually hydrolyzed in the body and the speed is controllable, long working hours can be obtained with a single dose dissolving drug at a constant reduced rate. 3) Improvement of stability By means of encapsulation, an environmentally sensitive drug can be protected from outside factors and used under various conditions.

Drug-encapsulated polymer nanocomposite

ⶄวൻ

3-5Ǵ㨙

ࠗࡦࠬ

200nm Fig. 1 Structure and Photograph of Nanocomposite Particles㩷

[2] Dry Powder Inhalation

㩷 Fig.2Fig. 2 Inhalation Device and DPI Nanocomposite particles can be applied to DPI substituting for injection. However, nanoparticles

49

with high cohesiveness and low flowability tend to stick to an inhalation device or are captured in the mouth or bronchi making agglomerates and hardly reach the depth of lung as they are. Therefore, it is important to make good-flowing carrier-type or agglomerate-type granules by dry or wet particle composition methods. It is also necessary that granules be dispersed to fine particles having a diameter of 1-7 microns to reach lung depth and then to be dispersed to nanospheres. As a result of study of nanocomposites and inhalation devices, the respirable fraction reaching the lung has increased from less than 10% to more than 40%.

[3] Application to Nanocosmetics  Additionally, this technology was found to be applicable to intradermal administration. Recently, nanocosmetic material for whitening and beautifying the skin has been successfully developed using nanocomposite particles introducing provitamin C into PLGA. Sample : 35-year-old female side skin㩷 (Picture taken by Prof. Miwa, Hiroshima Prefecture.University)

As shown in Fig. 3, inhalation of nanocomposite particles with insulin has been proved to have Nanocomposite㧔inhalataion㧕

䌡䋩䋨Conventional Technology䋩

Insulin soln (hypodermic)

Vitamin C solution

140

䌢䋩䋨New Technology 䋩 PLGA nanocomposite encapsulating vitamin C

120 100

 It has been confirmed that these nanocomposite

80

particles have much higher absorbility than a

60 40

Fig. 3 Reduction of blood

solution of vitamin C as seen in Fig. 4. Its effect

glucose level by insulin

also lasts longer by controlled release in the

20

dermis, which leads a to an increase in the

0 -4

Dermis

Fig. 4 Comparison of Absorbility

Insulin soln (intravenous)

㪙㫃㫆㫆㪻㪾㫃㫌㪺㫆㫊㪼㩷㫃㪼㫍㪼㫃䋨䋦䋩

Pore

2mm

Insulin soln (inhalation)

160

Emidermis

4hrs

0

4

8

12 16 20 24 28

amount of reductionto ascorbic acid.

32 36 40 44 48

㪫㫀㫄㪼㩷 㩷 㩿㪿㫉㪀㩷

[4] Other Applications Nanocomposite technology using biodegradable polymer can also be applied to oral administration of peptide drugs or testing reagents, including marking substances, and as matrix materials for advanced particle preparation for drugs and cosmetics.

greater and longer effectiveness in reduction of blood glucose level than other methods.

Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 Hosokawa Powder Technology Research Institute Tel:+81-72-855-2234 http://www.hosokawamicron.co.jp

50

Basic Technology Research Promotion

Development of Basic Technology for High Density Surface Mount Next-Generation Semiconductor Devices Keywords: SiP, High speed propagation R&D Term: Fy2001~2005 Budget of Fy2005: 350 million yen

Background The Technology Research Association for Adva nced Jisso Functional Material (JFMAT) was f ounded for the purpose of developing new basi c technologies for materials, processes, composi

tes and the evaluation of mutual compatibility for System in Package㧔SiP㧕that will realize surface mount of high speed propagation semi conductors onto printed circuit boards.

Organization Project Leader Mr.A NAKASO Hitachi Chemical Company, Ltd. Participating Organization Technology Research Association for Advanced Jisso Functional Materials

Mr. A. NAKASO

Contents 

-Markets -

-Target Five leading companies in the IC surface mount field are focusing on innovative basic technologies to completely verify mutual interface reliability and to propose new ultimate materials, processes and composites for wide range of next- generation SiP markets.

The outcome of this research project will contribute to wide range of next-generation information devices in addition to SiP applications. 



51

-Research ThemesSumitomo Bakelite Co., Ltd. is developing low dielectric constant thin layer organic insulation materials using nano composite technology.

Toray Industries Inc. is developing high dielectric constant inter-layer organic insulation material for decoupling capacitors that supplies stabilized power to chips

Hitachi Chemical Co., Ltd. is developing fine pitch  wiring formation technology and high adhesion technology for organic insulation materials with low dielectric constant in order to realize high speed signal transmission systems.

Shinko Electric Industries, Inc. is developing embedded passive structure and interconnection technology for high speed propagation.

Toray

㪺 All five participating companies will jointly execute evaluation of the mutual interface of SiP and evaluation as complete SiP system.

The Toray Research Center, is developing new techniques to evaluate mechanical and thermal properties for SiP.

        



Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 Technology Research Association for Advanced Jisso Functional Materials Tel:+81-35-715-2437 http://www.jfmat.com/

 52

Basic Technology Research Promotion

Advanced UV-B and C Optical Semiconductor Devices Key words : AlGaN, Short wavelength, Ultraviolet, Optical semiconductor R&D Term: FY2002᳸FY2005 Budget of FY2005: 70 million yen

Background The invention of the blue light emitting diode (LED) and the blue laser diode (LD) has led to the development of shorter wavelength optical semiconductors. Nowadays, due to technology limitations, the shortest wavelength level is around 360 nm. This research program targets surpassing this limit and developing optical semiconductors for a lower wavelength range: UV-B and C (ultraviolet wavelength from 315nm to 200nm). Target industrial devices include sensors for flame detection and environmental analysis, and LEDs for bill verification, genetic research, sterilization and so on. Furthermore, the technology developed in this research program is expected to be useful for the development of advanced LDs used for high-density optical storage.

Organization Project Leader Dr.M AIGA Kyosemi Corporation Participating Organizations Kyosemite Corporation Osaka Gas Co., Ltd.

Dr. M. AIGA

Contents used as the active layer, it will be in the domain of UV-B. Moreover, it was determined that a n-type or p-type could be obtained when doping this semiconductor. A semiconductor was also developed using such crystal growth technology.

CL Intensity

(1) Study of the Main Technical Element For blue LEDs based on InGaN, 360nm is the lower wavelength limit. To overcome this limit, research based on an AlGaN semiconductor was carried out. For AlGaN, the three main limitations are: p-type formation is difficult, fabrication of high quality electrodes is difficult, and crystal has a high defect density. - Development of semiconductors - AlGaN is a ternary semiconductor. By changing the AlN mole fraction from 0 to 1, the luminescence wavelength can be changed from 365nm (GaN) to 200nm (AlN). However, when increasing the AlN mole fraction, the crystal quality deteriorates and the resistivity of the crystal itself becomes large. It is then difficult to make practical devices. In order to solve this problem, super-lattice (SL) structures were fabricated. SL consists of multistacking two different crystal layers of a few nm. on top of each other By changing the thickness of each layer, it is possible to modify the SL property. By doing so, a luminescence peak wavelength of 315nm figure above right was obtained. If this semiconductor is

㪉㪍㪇

㪉㪏㪇

㪊㪇㪇

㪊㪉㪇

㪊㪋㪇

㪊㪍㪇

Wavelength [nm]

Spectrum of AlGaN crystal (cathodo-luminescence) - Development of electrodes - Compared to GaN, it is difficult to produce an efficient electrode on AlGaN. When using AlGaN for the electrodes of blue LEDs, good device performance could not be obtained. Therefore, development of electrodes for AlGaN was conducted. Also, there was an investigation on different substrates other than sapphire, which is currently used. If available, conductive substrates can be used as electrodes.

53

Flame

200

250

300 350 Wavelength [nm]

400

Flame Spectrum

Intensity

R2

Intensity

- Study of high quality crystal In order to produce highly sensitive photodetectors and high bright light sources, it is necessary to improve crystal quality. For this purpose, rather than conventional source materials, development of new sources with low impurity is being conducted. By using these sources, high crystal quality is being fabricated. To produce AlGaN, organometallic materials are used. Among them, trimethyl aluminum (TMA) is widely used. In order to produce high quality AlGaN, new materials to replace the conventional TMA are being developed. Already new materials sources have been obtained and growth of AlGaN crystal is being attempted.

Solar light

R1

R3

Incandescent lamp L

AlH3

㪉㪇㪇

R7

R4 R5

㪊㪇㪇

㪋㪇㪇

㪌㪇㪇

㪍㪇㪇

㪎㪇㪇

Wavelength [nm]

R6

㪪㫆㫃㪸㫉㩷㪸㫅㪻㩷㪠㫅㪺㪸㫅㪻㪼㫊㪺㪼㫅㫋㩷㪣㪸㫄㫇㩷㪪㫇㪼㪺㫋㫉㫌㫄 Solar and Incandescent lamp spectrum

New Al Organometallic Sources

- Development of light sources - Nowadays, mercury lamps and Xenon lamps are the common ultraviolet light sources. They are widely used for exposure machines and other equipment in the semiconductor industry, for hardening UV sensitive resin, for sterilization, etc. In comparison to UV lamps, it can be expected that UV-B LEDs based on AlGaN will have a longer lifetime and lower cost. Moreover, if LDs can be realized, applications to high-density optical storage and various analysis apparatus can be expected.

2) Study of Devices - Development of photo detectors - For ultraviolet photodetectors, applications such as flame sensors are expected. If a photodetector is fabricated using AlGaN, highly sensitive detectors with a selective responsivity to UV-C (200-280nm) can be achieved. A flame spectrum shows some signal around 250nm (first figure above). However, there is no signal below 280nm for sun radiation and electric light (secoice figure above). Therefore, by selectively detecting the 250-280nm wavelengths range, sensors which are only sensitive to flame radiation can be realized.

 Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220

Kyosemi Corporation Tel: +81-75-605-7311 http://www.kyosemi.co.jp/eghome.html

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Basic Technology Research Promotion

Development of Ultra-high-speed InP Epitaxial Crystal Manufacturing Technologies Keywords: Epitaxial crystal, Ultra-high-speed

R&D Term: FY2002᳸FY2007

Budget : 120 million yen

Background chipsets with uniform element characteristics and circuit properties will require high levels of uniformity in composition, film thickness, and impurity content rate in each epitaxial layer to improve the quality of the heterojunction interfaces, as well as growth techniques for ensuring their reproducibility. Development of mass-production technologies of metal organic chemical vapor deposition (MOCVD) for achieving these goals is the topic of the research described herein.

InP semiconductors have higher electron mobility than GaAs and SiGe semiconductors. For ultra-high-speed circuits of the over 100-Gbit/s class, InP semiconductors are indispensable for meeting speed requirements. Among various types of electronic devices, research and development is currently active in the commercialization of heterojunction bipolar transistors (HBT) and high electron mobility transistors (HEMT). The basic characteristics of elements such as InP HBT and HEMT depend largely on epitaxial layer materials and structures. Ensuring a stable supply of low-cost

Organization Project Leader  Dr.G ARAKI NTT Advanced Technology Corporation Participating Organization NTT Advanced Technology Corporation

Dr. G. ARAKI

Contents Communication systems From the end of the 1990’s, a sharp increase in the volume of communications traffic on the Internet and in traffic associated with cellular phones has resulted in pressing demand for communication systems capable of providing ultra-high-speed, large-capacity signal processing capacity. Although GaAs and SiGe semiconductors are used for commercially available transfer speeds of up to 10 Gbits/s, many observers believe the performance ceiling of these materials will limit maximum transfer rates to a little over 40 Gbits/s. For ultra-high-speed circuits of the over 40-Gbit/s class and ultra-high-speed analog and digital mixed circuits, anticipation is currently running high for devices incorporating faster InP semiconductors that will meet speed requirements with sufficient operating margins.

Ultra-high-speed circuit Among various types of high speed electronic devices with compound semiconductors, research and development is currently active in the commercialization of HBT and HEMT. The typical design of HBT devices uses a transistor movement perpendicular to wafers. On the other hand, HEMT devices are horizontal. Epitaxial crystals are basic materials for both transistors. Since InP semiconductors are capable of higher average carrier throughput than ordinary saturation velocity, they offer significant advantages in terms of current gain cut-off frequency (fT), an important characteristic parameter of transistors. The basic characteristics of elements such as InP HBT and HEMT depend largely on epitaxial layer materials and structures. In this research on InP HBT epitaxial crystal growth technology, the great influence of HBT device electrical characteristics on the development of new technology carbon-doped

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During study of InP HEMT epitaxial crystal growth, the key point in ultra-high-speed HEMT device electrical characteristics was the high electron mobility channel InGaAs layer. Generally, MOCVD uses metal organic materials, so it is difficult to remove the carbon concentration in epitaxial crystal. For this reason, new InGaAs growth material and techniques were examined aiming at pure epitaxial crystal without carbon.

InGaAs growth without hydrogen was studied. To assess carbon-doped InGaAs growth, current growth techniques and a dehydrogeneration annealing method were used. On discovering that heat treatment significantly degraded HBT characteristics and after determining the need for new materials, dopant and InGaAs growth materials were examined.

Base layer (without hydrogen)

Typical structure of HBT Reactor of new MOCVD system

New metalorganic compounds will be effective for solving HBT and HEMT technical problems. However, it is impossible to use current growth techniques with new materials because they react with each other before epitaxial growth. To address this problem, a new MOCVD system was developed in 2002 to facilitate the reaction of metalorganic compounds. More recently, HBT and HEMT structure epitaxial crystal was developed using the new MOCVD system, and a considerable amount of important basic data was collected.

Channel layer High electron mobility

Typical structure of HEMT

Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220

NTT Advanced Technology Corporation Tel:+81-46-250-3344 http://www.ntt-at.co.jp/

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Basic Technology Research Promotion

Functional Nanoprobes for Bio-Property Mapping Keywords: SPM, Biomaterials, Probe in Liquid R&D Term: FY2003-FY2006 Budget of FY2005: 80million yen

Backgrounds New technologies and instruments achieved in this project to measure interaction among molecules and their applications for biology will lead worldwide nanosciences and technologies in the field of measurement. This will produce great developments in existing industries by contributing to progress in life science, medical science, clinical testing and diagnosis, new medicine, artificial biomaterials, and so on.

The aim of this project is to develop a scanning probe microscope (SPM) with molecular scale resolution into a bio-property mapping system utilizing functional nanoprobes that can operate stably in liquid and can measure weak inter-molecular force and characteristics of biomolecules in a nanoscale area. This project will realize innovative technologies that can handle the real properties of biomaterials in their native states.

Organization Project Leader Mr.A INOUE Seiko Instruments lnc. Participating Organization Seiko Instruments lnc.

Mr. A. INOUE

Contents A SPM system for bio-property mapping equipped with functional nanoprobes for use in liquid and with bio-chamber, a special chamber for in liquid analysis, is the main goal in the first step of this project. The system will make it possible to obtain the property maps of biological samples in high resolution and high sensitivity, which will contribute to research on new functions and their characteristics.

SPM system overview

Functional nanoprobes Use in liquid

[1] Observe Phenomena of Life In order to analyze phenomena of life, it is necessary to observe cells and biomolecules such as proteins in their living environment, i.e. in liquid. The high resolution SPM for biological samples in the project is a good solution for this purpose.

Bio-chamber SPM System

This system enhances application of conventional SPM to the biological field, with its capability of high-resolution observation using a small

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technologies will contribute to research on the function and structure of proteins in basic life science. They also will realize a biomolecular analysis system with high-throughput that can be applied for surveys of functional natural substances and proteins with special functions. Further R&D has been conducted on electrical probes to measure the responses of cells to various stimuli and tests of cell activity utilizing the probes. These devices will lead to new research methods in life science to analyze responses of cells to dosage.

Probe

Characterization 〒㔌䋯ᝄ᏷ᷫ⴮₸ 㪈㪅㪈

ᝄ᏷ᷫዋ₸

㪈 㪇㪅㪐

ᮡḰຠ 㪜㪙㪄㪫㫀㫇 వ┵䍔䍍䍢 䈒䉍ᛮ䈐

㪇㪅㪏 㪇㪅㪎 㪇㪅㪍 㪇㪅㪌 㪇

㪉㪇㪇㪇㪇

㪋㪇㪇㪇㪇

㪍㪇㪇㪇㪇

㪏㪇㪇㪇㪇

㪈㪇㪇㪇㪇㪇

㪈㪉㪇㪇㪇㪇

䍸䍨䍼䍎䊶⹜ᢱ㑆〒㔌

Development of functional nano-probes using in

[3] Show the Function of Life

liquid

quantity of materials. For example, real time pathological diagnosis will be made possible by inspecting cells in a much shorter time. This system can also be applied to bacteria distinction to prevent contamination.

Cell

Chromosome Protein Measurement and Mapping

Various sensors and channels on the surface of a cell have functions to support life activities. This means that controlling stimuli to them can make it possible to control functions of life such as proliferation and differentiation, and to understand the mechanism of them. To do this, mapping the location of sensors and channels on the surface and showing reaction properties of them is necessary. A SPM with functional nanoprobes in liquid can catch the signals of life functions and visualize them through mapping. Through functional nanoprobes, SPM technologies will create a new generation of applications and thus contribute to the development of new industries.

SPM System and its Observation

[2] Measure the Activity of Life Expression and maintenance of the activity of life are the results of interaction among enormous numbers of biomolecules. Therefore, in order to approach the essence of life, it is necessary to efficiently measure a very small force among biomolecules and the very light weight of them. A sensing device that can measure a very small interaction force utilizing functional multi nanoprobes in liquid and a balancing device that can sense very light weights is believed to be the best solution for the above needs. These

Contact Information New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 Seiko Instruments Inc. Tel:+81-47-392-7862

http://www.sii.co.jp 

58

Basic Technology Research Promotion

Development of the World First Cathodluminescence and Raman Spectroscopic Systems Using a Near-field Spectroscopic Technique Key words: Nanotechnology, CL, Raman, Near-field R&D Term: FY2003-FY2007, Budget of FY2005: 70million

Outline CL and Raman spectroscopic systems that will be developd. If materials and devices can be analyzed at the nanometer level, this will contribute not only to improveing the yield and productivity of nanodevices and nanomaterials but also to accelerate the speed of their development by feeding back analytical results to the production process. The global competitive strength of Japan in the nanotechnology field is expected to be enhanced further compared to that of Europe and America A new analytical market and a contributon to society is expected through this project.

The purpose of this project is to design a scanning electron microscope (SEM) with a high spatial resolution and to develop the world’s first cathodluminescence(CL)and Raman spectroscopic systems, which can characterize the strain, defect, composition and electronic state of next-generation semiconductors such as Si and GaN as well as optoelectronic nanodevices composed of Si and GaN at the nanometer level, using a near-field spectroscopic technique. Furthermore, research will be conductd on electronic states in the near-infrared region of carbon nanotubes, which is expected to be applied to nanodevices, by using the

Organization Project Leader Dr.M YOSHIKAWA  Toray Research Center Participating Organizations Toray Research Center Hitachi high-technologies Corporation FHOTON Design Corporation

Dr.M. YOSHIKAWA

Content aims at the development of the world’s first CL and Raman spectroscopic systems, which can characterize the strain, defect, composition, and electronic state of next-generation semiconductors such as Si and GaN and optoelectronic devices composed of Si and GaN at the nanometer level by using SEM in place of an optical microscope.

Figure 1 shows a schematic diagram of the spectroscopic system to be developed. First, a new scanning electron microscope (SEM) Will be developed using a Schottky emission gun, which makes probe current ten times higher than that of the previous cold field emission gun. This SEM will also employ a new electron optical system with ExB (E cross B; crossing electrostatic and magnetic fields) signal detection technology patented by Hitachi, Ltd., and a new type objective lens which realizes a short focal length by producing a magnetic field for focusing the electron beam below the objective lens. Next, a highly sensitive spectroscopic systems for CL and Raman measurements at the nanometer level using a near-field probe. Furthermore, the project

59

development of the new spectroscopic systems, the strain, defect, composition, and electronic state of Si and GaN in Si electronic devices and opt-devices such as a blue laser diode (LD) and blue light emitting diode (LED) used for DVD-RAM, etc will be characterized. A study of the electronic state and crystallinity of carbon nanotubes at the nanometer level will also be condudted.

SEM SEM䇭Chamber䌲 䌓䌅䌍 Objective Lens

Optical Fiber

-e䇭䇭beam Z

Cryostat

Band Pass Filter X-Y CCD PM Spectrometer

Piezo Scanner AFM Stage SEM X-Y Stage Monitor

Cathodluminescence Raman Signal

Electronic Devices (GaN, Si etc.) Transistor

PC

Communication Satellite

Fig. 1 Spectroscopic System to Be Developed

(MESFET, HEMT,HBT)Car Navigation

PDA LCD, Fuel Cell

At present, for a commercially available near-field Raman microscope, it is difficult to characterize the strain, defect, composition and electronic state of materials and devices at the nanometer level, because of linitedl sensitivity. For this purpose, a new near-field probe more transparent than conventional optical fiber consisting of SiO2. will be developed In addition, a new cryostat with a high cooling ability to achieve 15K for two hours as a final goal will be designed. Fig. 2 shows a schematic diagram of the expected analytical market. After the

Flash Memory Cellular phone MESFET HEMT,HBT

Society Optical Fiber

Electronic Devices(GaN, Si etc.) Digital Still Camera CCD, Fuel Cell Flash memory IC IC card

Satellite Broadcast

Digital TV Personal Computer Personal Computer TV DVD-RAM Blue -LD and -LED

Electronic and Optical Devices (GaN, Si, Carbon Nanotube, etc.)

Fig. 2 Expected Analytical Market

Information Desk New Energy and Industrial Technology Development Organization Nanotechnology and Materials Technology Development Dept. Tel:+81-44-520-5220 Toray Research Center Tel:+81-77-533-8608 http://www.toray-research.co.jp/

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Fuel Cell䋺 Carbon Nanotube