Àíãë³éñüêî-óêðà¿íñüêèé ñëîâíèê ç ì³êðîåëåêòðîí³êè òà ì³êðîñèñòåìíî¿ òåõí³êè Óêëàäà÷³: Âàðöàá’þê Àíäð³é Ðîìàíîâè÷ Êîãóò ²...
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Àíãë³éñüêî-óêðà¿íñüêèé ñëîâíèê ç ì³êðîåëåêòðîí³êè òà ì³êðîñèñòåìíî¿ òåõí³êè Óêëàäà÷³: Âàðöàá’þê Àíäð³é Ðîìàíîâè÷ Êîãóò ²ãîð Òèìîô³éîâè÷
Çà çàãàëüíîþ ðåäàêö³ºþ Âàðöàá’þêà Àíäð³ÿ
Âàðöàá’þê À. Ð., Êîãóò ². Ò. Àíãë³éñüêî-óêðà¿íñüêèé ñëîâíèê ç ì³êðîåëåêòðîí³êè òà ì³êðîñèñòåìíî¿ òåõí³êè Ñëîâíèê ì³ñòèòü áëèçüêî 24 òèñ. ñòàòåé ç òåõíîëîã³é âèãîòîâëåííÿ òà êîíñòðóêö³¿ íàï³âïðîâ³äíèêîâèõ ³íòåãðàëüíèõ ñõåì, òîíêîïë³âêîâèõ ã³áðèäíèõ ³íòåãðàëüíèõ ñõåì, ç òåõíîëîã³÷íîãî óñòàòêóâàííÿ äëÿ ì³êðîåëåêòðîí³êè, ç îñíîâ ïðîåêòóâàííÿ òà êîíñòðóþâàííÿ ²Ñ, ì³êðîìåõàí³÷íèõ ïðèñòðî¿â, ç âèïðîáóâàííÿ òà êîíòðîëþ ²Ñ. Ïðèçíà÷åíèé äëÿ ïåðåêëàäà÷³â, ³íæåíåðíî-òåõí³÷íèõ ïðàö³âíèê³â, ñòóäåíò³â, àñï³ðàíò³â òà âèêëàäà÷³â.
ÏÐÎ ÊÎÐÈÑÒÓÂÀÍÍß ÑËÎÂÍÈÊÎÌ Ó ñëîâíèêó ïðèéíÿòà àëôàâ³òíà ãí³çäîâà ñèñòåìà. Çàãîëîâí³ ñëîâà ðîçòàøîâàí³ â àëôàâ³òíîìó ïîðÿäêó. Ñêëàäåí³ òåðì³íè, ùî ñêëàäàþòüñÿ ç çàãîëîâíîãî ñëîâà ³ âèçíà÷óâàíèõ êîìïîíåíò³â, ñë³ä øóêàòè ïî çàãîëîâíîìó (âåäó÷îìó) ñëîâó. Íàïðèêëàä, òåðì³í band edge ñë³ä øóêàòè â ãí³çä³ edge. Âåäó÷èé òåðì³í â ãí³çä³ çàì³íþºòüñÿ òèëüäîþ (~). Ñò³éê³ òåðì³íîëîã³÷í³ ñëîâîñïîëó÷åííÿ äàþòüñÿ â ï³äá³ð äî âåäó÷îãî òåðì³íà ³ â³ää³ëÿþòüñÿ çíàêîì ◊). Íàïðèêëàä chip ◊ ~-on-tape êðèñòàë, çìîíòîâàíèé íà ñòð³÷êîâîìó íîñ³¿. ðîìáà (◊  óêðà¿íñüêîìó ïåðåêëàä³ ð³çí³ ÷àñòèíè ìîâè ç îäíàêîâèì ñåìàíòè÷íèì çì³ñòîì ðîçä³ëåí³ ïàðàëåëüíèìè ë³í³ÿìè (|). Íàïðèêëàä check ïåðåâ³ðêà, êîíòðîëü | ïåðåâ³ðÿòè, êîíòðîëþâàòè. Ïîÿñíåííÿ äî óêðà¿íñüêèõ òåðì³í³â íàáðàí³ êóðñèâîì ³ ïîì³ùåí³ â êðóãë³ äóæêè. Íàïðèêëàä, floating gate ïëàâàþ÷èé çàòâîð (ÌÎÍ-ñòðóêòóðè). Ôàêóëüòàòèâíà ÷àñòèíà ÿê àíãë³éñüêîãî òåðì³íó, òàê ³ óêðà¿íñüêîãî åêâ³âàëåíòà äàºòüñÿ â êðóãëèõ äóæêàõ. Íàïðèêëàä, emitter-coupled (logic) gate åëåìåíò ÅÇË. Òåðì³í ñë³ä ÷èòàòè emitter-coupled logic gate; emitter-coupled gate constant ïîñò³éíà (âåëè÷èíà). Óêðà¿íñüêèé åêâ³âàëåíò ñë³ä ÷èòàòè ïîñò³éíà âåëè÷èíà, ñòàëà. Ñèíîí³ì³÷í³ âàð³àíòè ÿê àíãë³éñüêèõ òåðì³í³â, òàê ³ óêðà¿íñüêèõ åêâ³âàëåíò³â, äàí³ â êâàäðàòíèõ äóæêàõ ([ ]). Íàïðèêëàä ion [ion-beam] milling ³îííå ôðåçåðóâàííÿ. Òåðì³í ñë³ä ÷èòàòè ion milling, ion-beam milling ³îííå ôðåçåðóâàííÿ, multilayer metallization áàãàòîð³âíåâà [áàãàòîøàðîâà] ìåòàë³çàö³ÿ. Óêðà¿íñüêèé åêâ³âàëåíò ñë³ä ÷èòàòè áàãàòîð³âíåâà ìåòàë³çàö³ÿ, áàãàòîøàðîâà ìåòàë³çàö³ÿ. Ó ïåðåêëàäàõ ïðèéíÿòà íàñòóïíà ñèñòåìà ðîçä³ëîâèõ çíàê³â: áëèçüê³ ïî çíà÷åííþ åêâ³âàëåíòè â³äîêðåìëåí³ êîìîþ, äàëüø³ — êðàïêîþ ç êîìîþ, ð³çí³ çíà÷åííÿ — öèôðàìè.
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ÑÏÈÑÎÊ ÏÎÇÍÀ×ÅÍÜ ÒÀ ÓÌÎÂÍÈÕ ÑÊÎÐÎ×ÅÍÜ Â²Ñ âåëèêà ³íòåãðàëüíà ñõåìà ÁÌÊ áàçîâèé ìàòðè÷íèé êðèñòàë Ã²Ñ ã³áðèäíà ³íòåãðàëüíà ñõåìà ÄÒË ä³îäíî-òðàíçèñòîðíà ëîã³êà ÇÏ çàïàì’ÿòîâóþ÷èé ïðèñòð³é ²2Ë ³íòåãðàëüíà ³íæåêö³éíà ëîã³êà ÈÑ ³íòåãðàëüíà ñõåìà ÊÌÎÍ ñòðóêòóðà ìåòàë—îêñèä—íàï³âïðîâ³äíèê ÊÍÄ ñòðóêòóðà òèïó «êðåìí³é íà ä³åëåêòðèêó» ÊÍÑ ñòðóêòóðà òèïó «êðåìí³é íà ñàïô³ð³» ËÏÄ ëàâèííî-ïðîë³òíèé ä³îä ÌÄÍ ñòðóêòóðà ìåòàë—ä³åëåêòðèê—íàï³âïðîâ³äíèê Ì²Ñ ì³ëüéîí ³íñòðóêö³é â ñåêóíäó ÌÍÎÍ ñòðóêòóðà ìåòàë—í³òðèä—îêñèä—íàï³âïðîâ³äíèê ÌÎÍ ñòðóêòóðà ìåòàë—îêñèä—íàï³âïðîâ³äíèê ÏÀÕ ïîâåðõíåâ³ àêóñòè÷í³ õâèë³ ÏÇÇ ïðèëàä ³ç çàðÿäîâèì çâ’ÿçêîì ÏËÌ ïðîãðàìîâàíà ëîã³÷íà ìàòðèöÿ ÏÏÇ ïðèëàä ç ïåðåíåñåííÿì çàðÿäó ïðîô. ïðîôåñ³éíèé æàðãîí ÏÑË ëîã³êà íà ïåðåìèêà÷àõ ñòðóìó ð³äê. ð³äêî ÐÒË ðåçèñòîðíî-òðàíçèñòîðíà ëîã³êà ÍÂ²Ñ íàäâåëèêà ³íòåãðàëüíà ñõåìà ÍØ²Ñ íàäøâèäê³ñíà [íàäøâèäêîä³þ÷à] ³íòåãðàëüíà ñõåìà ÒÊÅ òåìïåðàòóðíèé êîåô³ö³ºíò ºìíîñò³ ÒÊÐ òåìïåðàòóðíèé êîåô³ö³ºíò ðîçøèðåííÿ ÒÊÎ òåìïåðàòóðíèé êîåô³ö³ºíò îïîðó ÒËÁÇ òðàíçèñòîðíà ëîã³êà ç áåçïîñåðåäí³ìè çâ’ÿçêàìè ÒÒË òðàíçèñòîðíî-òðàíçèñòîðíà ëîã³êà ÒÒËIII òðàíçèñòîðíî-òðàíçèñòîðíà ëîã³êà ç ä³îäàìè Øîòê³ ô³ðì. ô³ðìîâà íàçâà ÖÌÄ öèë³íäðè÷íèé ìàãí³òíèé äîìåí ÅÏÒ åëåêòðîííî-ïðîìåíåâà òðóáêà ÅÏË ëîã³êà íà åì³òåðíèõ ïîâòîðþâà÷àõ ÅÇË åì³òåðíî-çâ’ÿçàíà ëîã³êà VMOÍ ñòðóêòóðà ìåòàë—îêñèä—íàï³âïðîâ³äíèê ç V-ïîä³áíèìè êàíàâêàìè
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acu A
accessor/y: production ~ies òåõíîëîã³÷íå îñíàùåííÿ vacuum ~ies îñíàùåííÿ [ïðèñòîñóâàííÿ] äëÿ âàêóóìíèõ ñèñòåì accumulation: charge ~ íàêîïè÷åííÿ çàðÿäó accumulator íàêîïè÷óþ÷èé ðåã³ñòð; íàêîïè÷óþ÷èé ñóìàòîð product ~ íàêîïè÷óþ÷èé ñóìàòîð äîáóòê³â (â ñïåö³àë³çîâàíèõ ²Ñ) round-off ~ íàêîïè÷óþ÷èé ñóìàòîð ç îêðóãëåííÿì (â ïðîöåñîðíèõ ѲÑ) accuracy òî÷í³ñòü alignment ~ òî÷í³ñòü ñóì³ùåííÿ instrument ~ òî÷í³ñòü âèì³ðþâàëüíîãî ïðèëàäó positioning ~ òî÷í³ñòü ïîçèö³îíóâàííÿ repeatable ~ ñòóï³íü â³äòâîðíîñò³; ñòóï³íü ïîâòîðþâàíîñò³ trimmed ~ òî÷í³ñòü (íîì³íàë³â) ï³ñëÿ ï³äãîíêè trimming ~ òî÷í³ñòü ï³äãîíêè (íîì³íàë³â) untrimmed ~ òî÷í³ñòü (íîì³íàë³â) áåç ï³äãîíêè actigram ä³àãðàìà ä³é (âèêîðèñòîâóºòüñÿ â òåõí³ö³ ïî䳺âîãî ìîäåëþâàííÿ ³ ïîáóäîâè) action 1. ä³ÿ; âïëèâ 2. ðåæèì (ðîáîòè) 3. ïðèíöèï 䳿; ìåõàí³çì ðîáîòè avalanche ~ ëàâèííèé ïðîöåñ buffer ~ ïðèð³âíÿëüíà ä³ÿ (ïðè óçãîäæåíí³ ñõåì) compensating ~ ñèãíàë êîìïåíñàö³¿ continuous-wave ~ áåçïåðåðâíèé ðåæèì diode ~ ìåõàí³çì ðîáîòè ä³îäà parasitic ~ 1. ïàðàçèòíèé åôåêò 2. ïàðàçèòíå ñïðàöþâàííÿ pulsed ~ ³ìïóëüñíèé ðåæèì punch-through ~ ïðîêîë áàçè, ñòóëåííÿ pyrolytic ~ ï³ðîë³ç transistor ~ ìåõàí³çì ðîáîòè òðàíçèñòîðà trigger ~ ñïðàöþâàííÿ òðèãåðà activation àêòèâàö³ÿ, àêòèâóâàííÿ; çáóäæåííÿ annealing ~ àêòèâàö³ÿ â³äïàëîì dopant [impurity] ~ àêòèâàö³ÿ [³îí³çàö³ÿ] ëåãóþ÷î¿ äîì³øêè light ~ àêòèâàö³ÿ ñâ³òëîì activity 1. àêòèâí³ñòü Â²Ñ (â³äíîøåííÿ ÷èñëà àêòèâíèõ êîìïîíåíò³â äî çàãàëüíîãî ÷èñëà êîìïîíåíò³â) 2. ðåàêö³ÿ ñõåìè acuity:
abacus êîîðäèíàòíà ñ³òêà (ó âèðîáíèöòâ³ ²Ñ) ability: adhesive ~ àäãåç³éíà çäàòí³ñòü; êëåéê³ñòü resolving ~ ðîçä³ëüíà çäàòí³ñòü, äîçâ³ë wetting ~ çìî÷óþ÷à çäàòí³ñòü, ã³äðîô³ëüí³ñòü ablation: laser ~ âèäàëåííÿ 䳺þ ëàçåðíîãî âèïðîì³íþâàííÿ abradability ñòèðàí³ñòü abrasion: wafer ~ àáðàçèâíà îáðîáêà íàï³âïðîâ³äíèêîâèõ ïëàñòèí abrasive àáðàçèâ, àáðàçèâíèé ìàòåð³àë absorber àáñîðáåð (â ðåíòãåí³âñüê³é ë³òîãðàô³÷í³é, óñòàíîâö³) absorption ïîãëèíàííÿ, àáñîðáö³ÿ band-to-band ~ ì³æçîííå ïîãëèíàííÿ characteristic ~ âëàñíå [ôóíäàìåíòàëüíå] ïîãëèíàííÿ Compton ~ êîìïòîí³âñüêå ïîãëèíàííÿ extrinsic ~ äîì³øêîâå ïîãëèíàííÿ free-carrier ~ ïîãëèíàííÿ â³ëüíèìè íîñ³ÿìè fundamental ~ âëàñíå [ôóíäàìåíòàëüíå] ïîãëèíàííÿ impurity ~ äîì³øêîâå ïîãëèíàííÿ interband ~ ì³æçîííå ïîãëèíàííÿ intraband ~ âíóòð³øíüîçîííå ïîãëèíàííÿ intrinsic ~ âëàñíå [ôóíäàìåíòàëüíå] ïîãëèíàííÿ laser radiation ~ ïîãëèíàííÿ ëàçåðíîãî âèïðîì³íþâàííÿ lattice ~ ãðàòêîâå ïîãëèíàííÿ surface-state ~ ïîãëèíàííÿ ïîâåðõíåâèìè ñòàíàìè accelerator ïðèñêîðþâà÷ (â ì³êðîïðîöåñîðíèõ ²Ñ) floating-point ~ ïðèñêîðþâà÷ àðèôìåòè÷íèõ îïåðàö³é ç ïëàâàþ÷îþ êîìîþ hardware ~ àïàðàòíèé ïðèñêîðþâà÷ acceptor àêöåïòîð, àêöåïòîðíà äîì³øêà deep ~ ãëèáîêèé àêöåïòîð shallow ~ äð³áíèé (íåãëèáîêèé) àêöåïòîð accessibility and dissemination data çàáåçïå÷åííÿ äîñòóïó ³ ðîçïîâñþäæåííÿ äàíèõ (ó çàñòîñóâàíí³ äî òðàíñï’þòåð³â)
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alg edge ~ ð³çê³ñòü êðàþ (íàïð. ôîòîðåçèñòà) adatom àäñîðáîâàíèé àòîì, àäàòîì additive 1. äîì³øêà; ïðèñàäêà; äîáàâêà 2. àääèòèâíèé dope ~ ëåãóþ÷à äîì³øêà add-on 1. pl êîìïîíåíòè (²Ñ) 2. íàâ³ñíèé adherence 1. ç÷åïëåííÿ; ïðèëèïàííÿ 2. áåçë³÷ ³çîëüîâàíèõ òî÷îê (ïðè ïðîåêòóâàíí³ Â²Ñ) die ~ ç÷åïëåííÿ êðèñòàëà (ç ï³äêëàäêîþ) adhesion àäãåç³ÿ; ïðèëèïàííÿ photoresist ~ àäãåç³ÿ ôîòîðåçèñòà adhesive 1. êëåé, àäãåçèâ 2. êëåéêèé electrically conductive ~ åëåêòðîïðîâ³äíèé êëåé emulsion ~ åìóëüñèâíèé êëåé åðîõó ~ åïîêñèäíèé êëåé filled ~ êëåé ç íàïîâíþâà÷åì polymer ~ ïîë³ìåðíèé êëåé thixotropic ~ òèêñîòðîïíèé êëåé unfilled ~ êëåé áåç íàïîâíþâà÷à adhesiveness àäãåç³éíà çäàòí³ñòü; êëåéê³ñòü adion àäñîðáîâàíèé ³îí adjoint of a matrix (åðì³òîâî) çâ’ÿçàíà ìàòðèöÿ adjustment ðåãóëþâàííÿ; ï³äãîíêà functional ~ ôóíêö³îíàëüíà ï³äãîíêà adlayer àäñîðáîâàíèé øàð administration: ~ tests àòåñòàö³ÿ òåñò³â test pattern ~ àòåñòàö³ÿ òåñòîâî¿ ïîñë³äîâíîñò³ advice 1. ñòèê 2. ñòèêóâàëüíà òî÷êà ïåðåðèâàííÿ (ïðîãðàìè) algorithm: A ~ A-àëãîðèòì (àëãîðèòì ñèíòåçó òåêñò³â, áëèçüêèé äî D-àëãîðèòìó) aim ~ àëãîðèòì ïîøóêó ìåòè automatic placement and routing ~ àëãîðèòì àâòîìàòè÷íîãî ðîçì³ùåííÿ ³ òðàñóâàííÿ backward error recovery ~ àëãîðèòì â³äíîâëåííÿ ïðè ïîÿâ³ ïîìèëêè ç âèêîðèñòàííÿì òî÷îê ïîâåðíåííÿ (ïðè ðîçðîáö³ ÑÀÏР²Ñ) best path ~ àëãîðèòì ïîøóêó îïòèìàëüíîãî øëÿõó bit-map oriented spatial processing ~ àëãîðèòì ïðîñòîðîâî¿ îáðîáêè á³òîâèõ ìàñèâ³â
block-oriented ~ áëîêîâî-îð³ºíòîâàíèé àëãîðèòì branch and bound ~ àëãîðèòì ìåòîäó ã³ëîê ³ ìåæ (äëÿ ñèíòåçó ëîã³÷íèõ ³ ïðèíöèïîâèõ ñõåì ²Ñ) channel ~ àëãîðèòì êàíàëüíîãî òðàñóâàííÿ D ~ D-àëãîðèòì (àëãîðèòì ïîøóêó íåñïðàâíîñòåé íàïðàâëåíîãî òèïó) deductive ~ äåäóêòèâíèé àëãîðèòì (ìîäåëþâàííÿ ñïðàâíèõ ³ íåñïðàâíèõ ²Ñ) discard ~ àëãîðèòì âèêëþ÷åííÿ (íàïð. êîìïîíåíò³â â ðåãóëÿðíèõ ²Ñ) exact embedding ~ àëãîðèòì äî òðàñóâàííÿ (òî÷íå âèçíà÷åííÿ êîîðäèíàò òðàñ) expansion ~ õâèëüîâèé àëãîðèòì fast-Fourier-transform ~ àëãîðèòì øâèäêîãî ïåðåòâîðåííÿ Ôóðüå graph-based ~ àëãîðèòì, çàñíîâàíèé íà òåî𳿠ãðàô³â, ãðàôîîð³åíòîâàíèé àëãîðèòì Gummel’s ~ àëãîðèòì Ãóììåëÿ hidden-line ~ àëãîðèòì íåâèäèìèõ ë³í³é (âèêîðèñòîâóºòüñÿ â ãðàô³÷íèõ ïðèñòðîÿõ) image processing ~ àëãîðèòì îáðîáêè çîáðàæåíü iterative ~ ³òåðàö³éíèé àëãîðèòì Lee ~ Ëè àëãîðèòì, õâèëüîâèé àëãîðèòì ïîáóäîâè òîïîëî㳿 min-cut ~ àëãîðèòì ðîçáèòòÿ modified Lee ~ Ëè (ð³çíîâèä õâèëüîâîãî àëãîðèòìó ïîáóäîâè òîïîëî㳿), ìîäèô³êîâàíèé àëãîðèòì N-step ~ N-êðîêîâèé àëãîðèòì one-direction ~ îäíîíàïðàâëåíèé àëãîðèòì pessimistic simulation ~ ïåñèì³ñòè÷íèé àëãîðèòì ìîäåëþâàííÿ (ùî çíàõîäèòü ðàçîì ç ðåàëüíèìè íåñïðàâíîñòÿìè ³ íå³ñíóþ÷³ íåñïðàâíîñò³, çìàãàííÿ ñèãíàë³â ³ ò.ä.) random-search ~ àëãîðèòì âèïàäêîâîãî ïîøóêó repair-most ~ àëãîðèòì óñóíåííÿ ìàêñèìóìó íåñïðàâíîñòåé Roth’s D ~ D-àëãîðèòì Ðîòà routing ~ àëãîðèòì òðàñóâàííÿ Schonhage ~ àëãîðèòì Øîíãåéäæà (äëÿ ïðèñêîðåíîãî ïåðåìíîæóâàííÿ âåëèêèõ ÷èñåë) selective-trace ~ àëãîðèòì âèáîðó òðàñ (â ïðîåêòóâàíí³ òîïîëî㳿 ²Ñ)
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all sequential ~ ïîñë³äîâíèé àëãîðèòì submicron (mask) ~ óñòàíîâêà ñóì³ùåííÿ stable sorting ~ àëãîðèòì ñîðòóâàííÿ ³ (³ åêñïîíóâàííÿ) ç ñóáì³êðîííîþ çáåðåæåííÿ ðîçä³ëüíîþ çäàòí³ñòþ star ~ çîðÿíèé àëãîðèòì (îäèí ³ç wafer ~ óñòàíîâêà ë³òîãðàô³¿ ïî âñ³é ñòðóêòóðíèõ àëãîðèòì³â ñèíòåçó òåêñò³â) ïîâåðõí³ ïëàñòèíè table-driven ~ àëãîðèòì òàáëè÷íîãî ïîøóêó wafer-stepping ~ óñòàíîâêà ë³òîãðàô³¿ ç 9-value D- ~ äåâ’ÿòèçíà÷íèé D-àëãîðèòì ïîñë³äîâíèì êðîêîâèì åêñïîíóâàííÿì wiring ~ àëãîðèòì òðàñóâàííÿ X-ray ~ óñòàíîâêà ðåíòãåí³âñüêî¿ ë³òîãðàô³¿ aliasing ïåðåñòðîþâàííÿ áëîê³â ÍÂ²Ñ (çã³äíî alignment ñóì³ùåííÿ; îð³ºíòàö³ÿ ïåâíèì óìîâàì ïðè îïåðàö³¿ ðîçì³ùåííÿ coarse ~ ãðóáå ñóì³ùåííÿ; ãðóáà îð³ºíòàö³ÿ ôðàãìåíò³â íà êðèñòàë³) die-by-die ~ ïîñë³äîâíå ñóì³ùåííÿ â³ä aligner óñòàíîâêà ñóì³ùåííÿ (³ êðèñòàëà äî êðèñòàëà åêñïîíóâàííÿ); óñòàíîâêà ë³òîãðàô³¿ diffraction grating ~ ñóì³ùåííÿ ç âèêîðèñòàííÿì äèôðàêö³éíèõ ãðàòîê auto(mask)~ àâòîìàòèçîâàíà óñòàíîâêà double-diffraction ~ ñóì³ùåííÿ ç ñóì³ùåííÿ (³ åêñïîíóâàííÿ) âèêîðèñòàííÿì ïîäâ³éíî¿ äèôðàêö³¿ contact ~ óñòàíîâêà êîíòàêòíî¿ ë³òîãðàô³¿ epitaxial ~ åï³òàêñ³àëüíà îð³ºíòàö³ÿ deep-UV projection ~ óñòàíîâêà fine ~ òî÷íå ñóì³ùåííÿ; òî÷íà îð³ºíòàö³ÿ ïðîåêö³éíî¿ ôîòîë³òîãðàô³¿ ç äæåðåëîì Fresnel-zone ~ ñóì³ùåííÿ ç âèêîðèñòàííÿì äàëüíüîãî ALI óëüòðàô³îëåòîâîãî çîí Ôðåíåëÿ [äàëüíüîãî ÓÔ-] âèïðîì³íþâàííÿ full-wafer [global wafer] ~ ñóì³ùåííÿ ïî diffusion tube ~ ïðèñòð³é äëÿ îð³ºíòàö³¿ âñüîìó ïîëþ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè òðóáè äèôóç³éíî¿ ïå÷³ laser interferometric ~ ñóì³ùåííÿ çà direct step-onto-wafer ~ óñòàíîâêà ïðÿìîãî äîïîìîãîþ ëàçåðíîãî ³íòåðôåðîìåòðà ïîñë³äîâíîãî êðîêîâîãî åêñïîíóâàííÿ (áåç laser scanning ~ ëàçåðíå ñóì³ùåííÿ çàñòîñóâàííÿ øàáëîí³â) level-to-level ~ ïîøàðîâå ñóì³ùåííÿ, electron-beam ~ óñòàíîâêà åëåêòðîííîñóì³ùåííÿ øàð³â ïðîìåíåâî¿ ë³òîãðàô³¿ mask-to-wafer ~ ñóì³ùåííÿ ôîòîøàáëîíó ç full-field (mask) ~ óñòàíîâêà ñóì³ùåííÿ (³ íàï³âïðîâ³äíèêîâîþ ïëàñòèíîþ åêñïîíóâàííÿ) ïî âñüîìó ïîëþ multiple-mask ~ ñóì³ùåííÿ ì³æ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè ôîòîøàáëîíàìè hard-contact ~ óñòàíîâêà ë³òîãðàô³¿ ç off-àõis ~ ñóì³ùåííÿ ïî ïåðèôåð³éíèõ îñÿõ ù³ëüíèì êîíòàêòîì projection (mask) ~ ñóì³ùåííÿ mask ~ óñòàíîâêà ñóì³ùåííÿ (³ ôîòîøàáëîíó ïðè ïðîåêö³éí³é åêñïîíóâàííÿ); óñòàíîâêà ë³òîãðàô³¿ ôîòîë³òîãðàô³¿ projection ~ óñòàíîâêà ïðîåêö³éíî¿ ë³òîãðàô³¿ proximity (mask) ~ ñóì³ùåííÿ ôîòîøàáëîíó proximity ~ óñòàíîâêà ë³òîãðàô³¿ ç (ì³êðî) ïðè ôîòîë³òîãðàô³¿ ç (ì³êðî) çàçîðîì çàçîðîì reticle ~ ñóì³ùåííÿ ïðîì³æíîãî reduction projection ~ óñòàíîâêà ôîòîøàáëîíó; ñóì³ùåííÿ ôîòîîðèã³íàëó ïðîåêö³éíî¿ ë³òîãðàô³¿ ³ç çìåíøåííÿì site-by-site ~ ïîñë³äîâíå ñóì³ùåííÿ â³ä çîáðàæåííÿ ä³ëÿíêè äî ä³ëÿíêè (â óñòàíîâö³ ë³òîãðàô³¿ site ~ óñòàíîâêà ë³òîãðàô³¿ ç ïîñë³äîâíèì ç ïîñë³äîâíèì êðîêîâèì åêñïîíóâàííÿì) êðîêîâèì åêñïîíóâàííÿì spaced ~ ñóì³ùåííÿ â ë³òîãðàô³¿ ç (ì³êðî) soft-contact ~ óñòàíîâêà ë³òîãðàô³¿ ç ì’ÿêèì çàçîðîì êîíòàêòîì target ~ ñóì³ùåííÿ çà äîïîìîãîþ step-and-repeat [step-by-step, stepper] ~ ïåðåõðåñòÿ ì³êðîñêîïà óñòàíîâêà ë³òîãðàô³¿ ç ïîñë³äîâíèì theta ~ êóòîâå ñóì³ùåííÿ êðîêîâèì åêñïîíóâàííÿì allocation: shadow (projection) mask ~ óñòàíîâêà connections ~ ðîçïîä³ë ç’ºäíàíü (ïî ë³òîãðàô³¿ ç (ì³êðî) çàçîðîì êàíàëàõ)
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ana allocator: high-output current operational ~ control ~ ïðîãðàìà ðîçïîä³ëó ôóíêö³é îïåðàö³éíèé ï³äñèëþâà÷ ç âèñîêèì óïðàâë³ííÿ âèõ³äíèì ñòðóìîì data/memory ~ ïðîãðàìà ðîçïîä³ëó äàíèõ high-stew rate operational ~ îïåðàö³éíèé ïî åëåìåíòàõ ïàì’ÿò³ ï³äñèëþâà÷ ç âèñîêîþ øâèäê³ñòþ alloy ñïëàâ | ñïëàâëÿòè íàðîñòàííÿ âèõ³äíî¿ íàïðóãè mercury-cadmium-telluride ç’ºäíàííÿ high-speed operational ~ øâèäêîä³éíèé êàäì³é — ðòóòü — òåëóð, ç’ºäíàííÿ ÊÐÒ îïåðàö³éíèé ï³äñèëþâà÷ III-V ~ ñïëàâ åëåìåíò³â ²²² ³ V ãðóïè high-voltage operational ~ âèñîêîâîëüòíèé alloying: îïåðàö³éíèé ï³äñèëþâà÷ interface ~ ñïëàâ ïîâåðõîíü ðîçä³ëó hybrid ~ ã³áðèäíèé ï³äñèëþâà÷, Ã²Ñ alpha 1. àëüôà (êîåô³ö³ºíò ïåðåäà÷³ ï³äñèëþâà÷à åì³òåðíîãî ñòðóìó òðàíçèñòîðà â ñõåì³ ³ç IC ~ ³íòåãðàëüíèé ï³äñèëþâà÷, ²Ñ çàãàëüíîþ áàçîþ 2. àëüôà-÷àñòêà ï³äñèëþâà÷à alumina îêñèä àëþì³í³þ, Àl2Î3 logarithmic ~ ëîãàðèôì³÷íèé ï³äñèëþâà÷ glazed ~ ãëàçóðîâàíà ï³äêëàäêà ç îêñèäó low-drift operational ~ îïåðàö³éíèé àëþì³í³þ ï³äñèëþâà÷ ç ìàëèì äðåéôîì aluminizing ìåòàë³çàö³ÿ àëþì³í³ºì mixed-process ~ ï³äñèëþâà÷, ï³äãîòîâëåíèé çà êîìá³íîâàíîþ òåõíîëî㳺þ aluminum àëþì³í³é, Àl monolithic ~ ìîíîë³òíèé ï³äñèëþâà÷; glass-coated ~ àëþì³í³ºâà ï³äêëàäêà ç íàï³âïðîâ³äíèêîâà ²Ñ ï³äñèëþâà÷à ñêëÿíèì ïîêðèòòÿì off-chip ~ íàâ³ñíèé [çîâí³øí³é] ï³äñèëþâà÷ ambient: one-chip ~ îäíîêðèñòàëüíèé ï³äñèëþâà÷ annealing ~ ñåðåäîâèùå äëÿ ïðîâåäåííÿ on-chip ~ ï³äñèëþâà÷ íà îäíîìó êðèñòàë³ ç â³äïàëó ³íøîþ ñõåìîþ dry oxygen ~ àòìîñôåðà ñóõîãî êèñíþ operational ~ îïåðàö³éíèé ï³äñèëþâà÷ oxidizing ~ îêèñëþâàëüíå ñåðåäîâèùå; optical isolation ~ ï³äñèëþâà÷ ç îïòè÷íîþ îêèñëþâàëüíà àòìîñôåðà ðîçâ’ÿçêîþ reducing ~ â³äíîâíå ñåðåäîâèùå; â³äíîâíà àòìîñôåðà optically-coupled ~ ï³äñèëþâà÷ ç îïòè÷íèì amorphization àìîðô³çàö³ÿ (ïåðåâ³ä àáî çâ’ÿçêîì ïåðåõ³ä ìàòåð³àëó â àìîðôíèé ñòàí) sample-and-hold ~ ï³äñèëþâà÷ âèá³ðêè ³ amplification 1. ï³äñèëåííÿ 2. êîåô³ö³ºíò çáåð³ãàííÿ ï³äñèëåííÿ semiconductor ~ íàï³âïðîâ³äíèêîâà ²Ñ small-signal ~ 1. ï³äñèëåííÿ ïðè ìàëîìó ï³äñèëþâà÷à ð³âí³ ñèãíàëó 2. êîåô³ö³ºíò ï³äñèëåííÿ ïðè S/H ~ äèâ. sample-and-hold amplifier ìàëîìó ð³âí³ ñèãíàëó small-signal ~ áàãàòîêàíàëüíèé ï³äñèëþâà÷ amplifier ï³äñèëþâà÷ thick-film ~ òîâñòîïë³âêîâà Ã²Ñ antilog(arithmic) ~ àíòèëîãàðèôì³÷íèé ï³äñèëþâà÷à ï³äñèëþâà÷ thin-film ~ òîíêîïë³âêîâà Ã²Ñ ï³äñèëþâà÷à bi-FET ~ ²Ñ ï³äñèëþâà÷à íà á³ïîëÿðíèõ ³ analysis à ïîëüîâèõ òðàíçèñòîðàõ ~ synthesis àíàë³ç ÷åðåç ñèíòåç bulk-effect ~ ï³äñèëþâà÷ íà îá’ºìíèõ ~ variance äèñïåðñ³éíèé àíàë³ç õâèëÿõ block-level ~ àíàë³ç íà ð³âí³ áëîê³â charge-transfer ~ ï³äñèëþâà÷ íà ïðèëàäàõ charged particle àñtivation ~ àêòèâàö³éíèé àíàë³ç çàðÿäæåíèõ ÷àñòèíîê ç ïåðåíåñåííÿì çàðÿäó circuit ~ 1. àíàë³ç ñõåìîòåõí³êè 2. àíàë³ç íà Darlington ~ ï³äñèëþâà÷ íà ïàð³ Äàðë³íãòîíà åëåêòðè÷íîìó ð³âí³ computer circuit ~ àâòîìàòèçîâàíèé àíàë³ç differential ~ äèôåðåíö³àëüíèé ï³äñèëþâà÷ ñõåì drift-stabilized operational ~ îïåðàö³éíèé ï³äñèëþâà÷ ³ç ñòàá³ë³çàö³ºþ äðåéôó
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ann design ~ 1. àíàë³ç ïðîåêòó 2. àíàë³ç ìåòîä³â, ï³äõîä³â ³ ìàðøðóò³â ïðîåêòóâàííÿ EAPFS ~ àíàë³ç ïðîñòîðîâîãî ðîçïîä³ëó ïîòåíö³àëó òîíêî¿ ñòðóêòóðè effect-cause ~ àíàë³ç ìåòîäîì «íàñë³äîêïðè÷èíà» electron microprobe ~ àíàë³ç ìåòîäîì åëåêòðîííîãî ì³êðîçîíäà failure (-mode) ~ àíàë³ç â³äìîâ; àíàë³ç íåñïðàâíîñòåé gate-level ~ àíàë³ç ëîã³÷íèõ åëåìåíò³â hazard ~ àíàë³ç ðèçèê³â çáîþ incremental circuit ~ ³íêðåìåíòíèé àíàë³ç ñõåìîòåõí³êè liquid-crystal failure ~ àíàë³ç â³äìîâ ç âèêîðèñòàííÿì ð³äêîêðèñòàë³÷íèõ ³íäèêàòîð³â means/ends ~ àíàë³ç çàñîá³â ³ ðåçóëüòàò³â (çàñòîñîâóºòüñÿ â ñèñòåìàõ ç øòó÷íèì ³íòåëåêòîì) mixed-level ~ áàãàòîð³âíåâèé àíàë³ç mixed-mode ~ çì³øàíèé àíàë³ç modified mesh ~ ìîäèô³êîâàíèé ìåðåæíèé (ñ³òêîâèé) àíàë³ç modified nodal ~ àíàë³ç ê³ë íà îñíîâ³ ìîäèô³êîâàíîãî ìåòîäó âóçëîâèõ ïîòåíö³àë³â multilevel ~ áàãàòîð³âíåâèé àíàë³ç neutron àñtivation ~ íåéòðîííîàêòèâàö³éíèé àíàë³ç nuclear reactions ~ àíàë³ç ìåòîäîì ÿäåðíèõ ðåàêö³é on-line circuit ~ àíàë³ç â ðåàëüíîìó ÷àñ³ ³ áåçïîñåðåäíüîìó â³äîáðàæåíí³ ðåçóëüòàò³â àíàë³çó post-fault ~ àïîñòåð³îðíèé àíàë³ç íåñïðàâíîñòåé race ~ àíàë³ç ñòàí³â ñèãíàëó (â ëîã³÷í³é ²Ñ) reject ~ àíàë³ç áðàêîâàíî¿ ïðîäóêö³¿ residual gas ~ àíàë³ç çàëèøêîâèõ ãàç³â signature ~ ñèãíàòóðíèé àíàë³ç sparse tableau ~ òàáëè÷íèé ìåòîä àíàë³çó spike ~ àíàë³ç ðèçèêó çáîþ (àíàë³ç ²Ñ íà ëîã³÷íîìó ð³âí³ ç óðàõóâàííÿì òèì÷àñîâèõ çàòðèìîê) static timing ~ àíàë³ç ñòàòè÷íèõ ðèçèê³â çáîþ steady-state ~ àíàë³ç ñòàòè÷íîãî ðåæèìó surface elemental ~ àíàë³ç ñë³ä³â (äîì³øêîâèõ) åëåìåíò³â íà ïîâåðõí³
thermogravimetric ~ òåðìîãðàâ³ìåòðè÷íèé àíàë³ç (íàïð. ï³ä ÷àñ ï³ðîëèçó) timing ~ ÷àñîâèé àíàë³ç (äîçâîëÿº âèÿâèòè äèíàì³÷í³ ðèçèêè çáîþ ²Ñ ³ ãîíêè ñèãíàë³â â ëîã³÷íèõ ²Ñ) transient ~ àíàë³ç ïåðåõ³äíèõ ïðîöåñ³â “what-if” ~ àíàë³ç ìåòîäîì «ùî-ÿêùî» worst-case ~ àíàë³ç íà ÿêíàéã³ðøèé âèïàäîê X-photoemission spectroscopy ~ àíàë³ç ìåòîäîì ðåíòãåí³âñüêî¿ ôîòîåì³ñ³éíî¿ ñïåêòðîñêîﳿ analyzer àíàë³çàòîð (1. ïðèñòð³é 2. ïðîãðàìà) basic ~ îñíîâíà ïðîãðàìà àíàë³çàòîðà logic ~ ëîã³÷íèé àíàë³çàòîð, àíàë³çàòîð ëîã³÷íèõ ñòàí³â multichannel ~ áàãàòîêàíàëüíèé àíàë³çàòîð optical ~ îïòè÷íèé àíàë³çàòîð path ~ ïðîõ³äíèé àíàë³çàòîð, àíàë³çàòîð øëÿõ³â (â àñèíõðîííèõ êîëàõ) semiconductor impurity ~ ïðèëàä äëÿ âèçíà÷åííÿ ñêëàäó äîì³øîê â íàï³âïðîâ³äíèêàõ spreadsheet ~ àíàë³çàòîð ðîçïîä³ëó çàòðèìîê (â ëîã³÷íèõ êîëàõ) AND: dot [implied, wired] ~ ìîíòàæíå ² angle: sidewall ~ 1. êóò òðàâëåííÿ (îêñèäíîãî øàðó) 2. êóò ïðîÿâëåííÿ (ôîòîðåçèñòà) 3. êóò íàõèëó á³÷íî¿ ñò³íêè (íàïð. êàíàâêè) anhydride: boric ~ áîðíèé àíã³äðèä, îêñèä áîðó, Â2Î3 phosphoric ~ ôîñôîðíèé àíã³äðèä, ï’ÿòèîêñèä ôîñôîðó, Ð2Î5 phosphorous ~ ôîñôîðíèé àíã³äðèä, òðèîêñèä ôîñôîðó, P2O3 anisotropy àí³çîòðîï³ÿ etching ~ àí³çîòðîï³ÿ òðàâëåííÿ anneal â³äïàë | â³äïàëþâàòè high-temperature ~ âèñîêîòåìïåðàòóðíèé â³äïàë annealer óñòàíîâêà äëÿ â³äïàëó electron-beam ~ óñòàíîâêà åëåêòðîííîïðîìåíåâîãî â³äïàëó annealing â³äïàë bulk ~ îá’ºìíèé â³äïàë capless ~ â³äïàë áåç çàõèñíîãî ïîêðèòòÿ capping ~ â³äïàë ³ç çàõèñíèì ïîêðèòòÿì contact ~ â³äïàë çà ðàõóíîê êîíòàêòíîãî íàãð³âó (â³ä ãàðÿ÷î¿ ïîâåðõí³)
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app diffusion ~ ï³ñëÿäèôóç³éíèé â³äïàë hydrogen ~ â³äïàë â àòìîñôåð³ âîäíþ implant(ation)~ ï³ñëÿ³ìïëàíòàö³éíèé â³äïàë ion-beam ~ ³îííî-ïðîìåíåâèé â³äïàë lamp ~ ëàìïîâèé â³äïàë laser(-beam)~ ëàçåðíèé â³äïàë light ~ ðàä³àö³éíèé â³äïàë microwave ~ ÍÂ×-â³äïàë plasma ~ ïëàçìîâèé â³äïàë, â³äïàë â ïëàçìîâ³é óñòàíîâö³ pulse ~ ³ìïóëüñíèé â³äïàë rapid ~ øâèäêèé â³äïàë superficial ~ â³äïàë ïîâåðõí³ thermal ~ òåðì³÷íèé [òåïëîâèé] â³äïàë, òåðìîâ³äïàë anodization àíîäóâàííÿ electrolytic ~ åëåêòðîë³òè÷íå àíîäóâàííÿ plasma ~ ïëàçìîâå àíîäóâàííÿ antifuse àíòèïåðåìè÷êà (íåïðîâ³äíà ïåðåìè÷êà, ùî ïåðåâîäèòüñÿ â åëåêòðîïðîâ³äíèé ñòàí) antimonide àíòèìîí³ä (ñïëàâ ñóðìè ç ìåòàëîì) aluminum ~ àíòèìîí³ä àëþì³í³þ, AlSb gallium ~ àíòèìîí³ä ãàë³þ, GaSb indium ~ àíòèìîí³ä ³íä³þ, InSb antistat àíòèñòàòèê anodization àïîäèçàö³ÿ (çì³íà ðîçïîä³ëó ³íòåíñèâíîñòåé àêóñòè÷íèõ õâèëü â ñòðóêòóðàõ íà ÏÀÂ) apparatus óñòàíîâêà; ïðèñòð³é cluster ion-beam ~ óñòàíîâêà îñàäæåííÿ (ïë³âîê) ç ïîòîêó ³îí³çîâàíèõ ìîëåêóë double-crucible crystal-growing ~ äâîõòèãåëüíà óñòàíîâêà äëÿ âèðîùóâàííÿ êðèñòàë³â float-zone ~ óñòàíîâêà î÷èùåííÿ ìåòîäîì ïëàâàþ÷î¿ çîíè vapor-growth ~ óñòàíîâêà äëÿ âèðîùóâàííÿ ïë³âîê ç ïàðîâî¿ ôàçè apparel: clean-room ~ (òåõíîëîã³÷íà) îäÿã äëÿ ÷èñòèõ âèðîáíè÷èõ ïðèì³ùåíü applicator: glue ~ (äîçóþ÷èé) ïðèñòð³é äëÿ íàíåñåííÿ êëåþ approach ìåòîä; ï³äõ³ä (äèâ. òàêîæ method, mode, technique)
basic ~ áàçîâèé êîíñòðóêòèâíîòåõíîëîã³÷íèé ìåòîä bipolar ~ ìåòîä (âèãîòîâëåííÿ) á³ïîëÿðíèõ ²Ñ bottom-up ~ ìåòîäîëîã³ÿ âèñõ³äíîãî ïðîåêòóâàííÿ Bristle Blocks ~ ìåòîä çâ’ÿçàíèõ áëîê³â building-block ~ ìåòîä ñòàíäàðòíèõ áëîê³â cassette-to-cassette ~ ìåòîä ì³æîïåðàö³éíîãî òðàíñïîðòóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí ç êàñåòè â êàñåòó cellular ~ ìåòîä ïðîåêòóâàííÿ çà äîïîìîãîþ á³áë³îòåêè áàçîâèõ ëîã³÷íèõ åëåìåíò³â cermet ~ êåðìåòíà òåõíîëîã³ÿ chip-and-wire ~ ìåòîä äðîòÿíîãî ìîíòàæó êðèñòàë³â circuit motivated ~ ñõåìíî-îð³ºíòîâàíèé ï³äõ³ä custom [customized] ~ ìåòîä (âèãîòîâëåííÿ) çàìîâëåíèõ ²Ñ «divide and conquer» ~ ìåòîä ïðîåêòóâàííÿ «ðîçä³ëÿé ³ âîëîäàðþé», ìåòîä ðîç’ºäíóâàííÿ (ïðè ïðîåêòóâàíí³ Â²Ñ çâåðõó âíèç) edge-based ~ ìåòîä êîíòóðíèõ ë³í³é (äëÿ àíàë³çó îðèã³íàë³â) epic ~ ÅϲÊ-ïðîöåñ, ÅϲÊ-òåõíîëîã³ÿ figure-based ~ ìåòîä ìàëþíê³â (äëÿ àíàë³çó îðèã³íàë³â) fixed-interconnection pattern ~ ìåòîä ô³êñîâàíèõ ì³æç’ºäíàíü flat ~ çàãàëüíèé (ñï³ëüíèé) ï³äõ³ä (äî ïðîåêòóâàííÿ ²Ñ) flip-chip ~ ìåòîä ïåðåâåðíåíîãî êðèñòàëà gate-array ~ ìåòîä áàçîâîãî ìàòðè÷íîãî êðèñòàëà, ìåòîä ïðîåêòóâàííÿ ²Ñ íà îñíîâ³ ëîã³÷íèõ ìàòðèöü hierarchical ~ ³ºðàðõ³÷íèé ï³äõ³ä hierarchical nesting ~ ìåòîä ³ºðàðõ³÷íîãî ðîçì³ùåííÿ åëåìåíò³â ³ ôðàãìåíò³â Â²Ñ hundred ðår ñånt yield ~ ìåòîä âèãîòîâëåííÿ Â²Ñ ç 100%-âèì âèõîäîì ïðèäàòíèõ êîì³ðîê hybrid ~ ã³áðèäíà òåõíîëîã³ÿ incremental ~ ³íêðåìåíòíèé ï³äõ³ä in-line ~ ìåòîä ïîòîêîâî¿ òåõíîëîã³÷íî¿ îáðîáêè (íàïð. íàï³âïðîâ³äíèêîâèõ ïëàñòèí)
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are iterative-ñåll ~ ìåòîä áàçîâèõ êîì³ðîê, ùî channelless ~ áåçêàíàëüíà àðõ³òåêòóðà (â ïîâòîðþþòüñÿ áàçîâîìó ìàòðè÷íîìó êðèñòàë³) Macrocell ~ ìåòîä ïðîåêòóâàííÿ ²Ñ íà fault-tolerant ~ â³äìîâîñò³éêà àðõ³òåêòóðà îñíîâ³ ìàêðîêîì³ðîê area 1. îáëàñòü, çîíà; ä³ëÿíêà (äèâ. òàêîæ master MOS ~ ìåòîä áàçîâîãî ìàòðè÷íîãî region, zone) 2. ïëîùà êðèñòàëà ç ÌÎÍ-êîì³ðêàìè base ~ 1. áàçîâà îáëàñòü, áàçà 2. ïëîùà áàçè master-slice ~ ìåòîä áàçîâîãî ìàòðè÷íîãî bond (ing) ~ êîíòàêòíèé ìàéäàí÷èê êðèñòàëà chip-mount(ing) ~ ìàéäàí÷èê äëÿ ìîíòàæó mesa-epitaxial fabrication ~ êðèñòàëà ìåçàåï³òàêñ³àëüíà òåõíîëîã³ÿ clean ~ ÷èñòå âèðîáíè÷å ïðèì³ùåííÿ, ×ÂÏ, modular ~ ìîäóëüíèé ï³äõ³ä ÷èñòà ê³ìíàòà monolithic ~ ìåòîä (ñòâîðåííÿ) ìîíîë³òíèõ collector ~ 1. îáëàñòü êîëåêòîðà, êîëåêòîð ²Ñ 2. ïëîùà êîëåêòîðà path-oriented ~ ï³äõ³ä, çàñíîâàíèé íà connector ~ êðàéîâèé êîíòàêòíèé àíàë³ç³ øëÿõ³â (â ²Ñ) ìàéäàí÷èê planar (processing) ~ ïëàíàðíà òåõíîëîã³ÿ contact ~ 1. êîíòàêòíèé ìàéäàí÷èê 2. ïëîùà polycell (layout) ~ ìåòîä (ïðîåêòóâàííÿ) êîíòàêòó ìàòðè÷íèõ ²Ñ ç êîì³ðêàìè ð³çíèõ òèï³â diffused ~ äèôóç³éíà îáëàñòü (íàïð. ÒÒË ³ ÅÑË) drain ~ 1. ñò³÷íà îáëàñòü, îáëàñòü ñòîêó sea gates ~ ìåòîä (âèãîòîâëåííÿ) áàçîâîãî (ïîëüîâîãî òðàíçèñòîðà) 2. ïëîùà ñòîêó ìàòðè÷íîãî êðèñòàëà òèïó «ìîðå âåíòèë³â» dust-controlled ~ (âèðîáíè÷å) ïðèì³ùåííÿ selective field-îõide ~ ìåòîä âèáîð÷îãî ç êîíòðîëüîâàíîþ çàïîðîøåíîþ ïîâ³òðÿ ôîðìóâàííÿ çàõèñíîãî øàðó îêñèäó edge-contact ~ êðàéîâèé êîíòàêòíèé shaped-beam ~ ìåòîä ïðÿìîêóòíîãî çîíäà ìàéäàí÷èê SOS ~ ÊͲ-òåõíîëîã³ÿ emitter ~ 1. åì³òåðíà îáëàñòü, åì³òåð 2. standard ñåll(-based)~ ìåòîä ñòàíäàðòíèõ ïëîùà åì³òåðà êîì³ðîê ion-damaged ~ îáëàñòü, ïîðóøåíà ³îííîþ structured ~ ìåòîä ñòðóêòóðíîãî ³ìïëàíòàö³ºþ ïðîåêòóâàííÿ land ~ êîíòàêòíèé ìàéäàí÷èê top-down ~ ìåòîäîëîã³ÿ íèçõ³äíîãî masked ~ ìàñêîâàíà îáëàñòü; ìàñêîâàíà ïðîåêòóâàííÿ ä³ëÿíêà twin-tub ~ ìåòîä äâîõ êèøåíü (äëÿ metallized ~ ìåòàë³çîâàíèé ìàéäàí÷èê âèãîòîâëåííÿ ÊÌÎÍ ²Ñ) îõide-free ~ ä³ëÿíêà ïîâåðõí³ áåç îêñèäíîãî two-polysilicon ~ ìåòîä âèãîòîâëåííÿ ²Ñ ç øàðó äâîìà ð³âíÿìè ïîë³êðèñòàë³÷íîãî êðåìí³þ placement ~ îáëàñòü êðèñòàëà, ïðèçíà÷åíà waveform ~ õâèëüîâèé ìåòîä ìîäåëþâàííÿ äëÿ ðîçì³ùåííÿ åëåìåíò³â àáî êîìïîíåíò³â ²Ñ plate loading ~ ðîáî÷å ì³ñöå çàâàíòàæåííÿ approval: ïëàñòèí possible trouble ~ îáëàñòü êðèñòàëà ç design ~ ï³äòâåðäæåííÿ äîñòîâ³ðíîñò³ ìàêñèìàëüíîþ â³ðîã³äí³ñòþ âì³ñòó äåôåêò³â ïðîåêòó raised-contact ~ ñòîâï÷èêîâèé âèñíîâîê, specification ~ ï³äòâåðäæåííÿ äîñòîâ³ðíîñò³ êîíòàêòíèé ñòîâï÷èê ñïåöèô³êàö³¿ raised-metallized ~ âèñòóïàþ÷èé approximation: ìåòàë³çîâàíèé êîíòàêòíèé ìàéäàí÷èê; FB [flat-band] ~ íàáëèæåííÿ ïëîñêèõ çîí ñòîâï÷èêîâèé âèâ³ä, êîíòàêòíèé ñòîâï÷èê linear piecewise ~ êóñêîâî-ë³í³éíà routable ~ îáëàñòü êðèñòàëà, äîçâîëåíà äëÿ àïðîêñèìàö³ÿ (õàðàêòåðèñòèê ïðîâåäåííÿ ì³æç’ºäíàíü íàï³âïðîâ³äíèêîâèõ ïðèëàä³â) safe operating ~ îáëàñòü íàä³éíî¿ ðîáîòè (íà architecture 1. àðõ³òåêòóðà; îðãàí³çàö³ÿ; õàðàêòåðèñòè÷í³é êðèâ³é) êîìïîíóâàííÿ 2. êîíñòðóêö³ÿ bit-slice ~ ñåêö³îíîâàíà àðõ³òåêòóðà
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arr shaded ~ mask íåïðîçîðà ä³ëÿíêà ôîòîøàáëîíó source ~ 1. îáëàñòü âèòîêó (ïîëüîâîãî òðàíçèñòîðà) 2. ïëîùà âèòîêó stage working ~ ðîáî÷å ïîëå êîîðäèíàòíîãî ñòîëó terminal ~ êîíòàêòíèé ìàéäàí÷èê wiring ~ îáëàñòü êðèñòàëà, äîçâîëåíà äëÿ ïðîâåäåííÿ ì³æç’ºäíàíü arm: SMIF ~ ìàí³ïóëÿòîð (äëÿ âèâàíòàæåííÿ êàñåò ç íàï³âïðîâ³äíèêîâèìè ïëàñòèíàìè ç êîíòåéíåðà) ç âèêîðèñòàííÿì ñòàíäàðòíîãî ìåõàí³÷íîãî ³íòåðôåéñó transfer ~ ìåõàí³÷íà ðóêà, ìàí³ïóëÿòîð arrangement 1. ðîçì³ùåííÿ; ðîçòàøóâàííÿ 2. ñòðóêòóðà 3. ïðèñòð³é basic-circuit ~ ïðèíöèïîâà ñõåìà diode ~ 1. ä³îäíà ñòðóêòóðà 2. ä³îäíà ìàòðèöÿ; ä³îäíà çá³ðêà gate ~ 1. ñòðóêòóðà ëîã³÷íîãî åëåìåíòó 2. êîíô³ãóðàö³ÿ çàòâîðà (ïîëüîâîãî òðàíçèñòîðà) heat-sinking ~ òåïëîâ³äâ³ä matrix ~ ìàòðè÷íà ñòðóêòóðà mounting ~ ìîíòàæíî-ñêëàäàëüíå ïðèñòîñóâàííÿ ordered ~ âïîðÿäêîâàíà ñòðóêòóðà stacked ~ áàãàòîð³âíåâà ñòðóêòóðà array 1. ìàòðèöÿ; ìàòðè÷íà ²Ñ 2. ñòðóêòóðà 3. ìàñèâ 4. òàáëèöÿ 5. âåêòîð bipolar ~ ìàòðèöÿ á³ïîëÿðíèõ òðàíçèñòîð³â bulk CMOS ~ 1. ìàòðè÷íà ÊÌÎÍ ²Ñ ç ñóö³ëüíîþ íàï³âïðîâ³äíèêîâîþ ï³äêëàäêîþ 2. ÊÌÎÍ-áàçîâèé ìàòðè÷íèé êðèñòàë ç ñóö³ëüíîþ íàï³âïðîâ³äíèêîâîþ ï³äêëàäêîþ cell ~ 1. ìàòðèöÿ êîì³ðîê (íàïð. â áàçîâîìó ìàòðè÷íîìó êðèñòàë³) 2. ìàòðèöÿ ëîã³÷íèõ åëåìåíò³â, ëîã³÷íà [âåíòèëüíà] ìàòðèöÿ channel-free [channelless] gate ~ áåçêàíàëüíèé áàçîâèé ìàòðè÷íèé êðèñòàë charge-coupled(-device)~ ìàòðèöÿ ÏÇÑ circuit ~ 1. ñõåìíà ìàòðèöÿ 2. ìàòðè÷íà ñõåìà coupled quantum box ~ ìàòðèöÿ çâ’ÿçàíèõ êâàíòîâèõ ÿùèê³â customizable ~ ñïåö³àë³çîâàíà ìàòðèöÿ data ~ ìàñèâ äàíèõ diode ~ with self-scanning ä³îäíà ìàòðèöÿ ç ñàìîñêàíóâàííÿì
drop-in test ~ òåñòîâà ñòðóêòóðà íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ FET ~ 1. ìàòðèöÿ ïîëüîâèõ òðàíçèñòîð³â 2. ñòðóêòóðà íà ïîëüîâèõ òðàíçèñòîðàõ field-programmable gate ~ ëîã³÷íà ìàòðèöÿ, ïðîãðàìîâàíà êîðèñòóâà÷åì fuse-link [fuse-programmable] ëîã³÷íà ìàòðèöÿ ç ïëàâêèìè ïåðåìè÷êàìè gate ~ ìàòðèöÿ ëîã³÷íèõ åëåìåíò³â, ëîã³÷íà [âåíòèëüíà] ìàòðèöÿ ²C ~ ³íòåãðàëüíà ìàòðèöÿ; ìàòðè÷íà ²Ñ image ~ 1. ìàòðèöÿ çîáðàæåíü ñòðóêòóð (íà ôîòîøàáëîí³) 2. ìàòðè÷íèé ôîðìóâà÷ â³äåîñèãíàë³â large-scale ~ âåëèêà ìàòðèöÿ; ìàòðè÷íà Â²Ñ laser-scanning ~ ìàòðèöÿ, ñêàíîâàíà ëàçåðíèì ïðîìåíåì lateral ~ ãîðèçîíòàëüíà ñòðóêòóðà linear ~ ìàòðèöÿ àíàëîãîâèõ åëåìåíò³â (òèï áàçîâîãî ìàòðè÷íîãî êðèñòàëà); ë³í³éíà ìàòðè÷íà ²Ñ logic ~ ëîã³÷íà [âåíòèëüíà] ìàòðèöÿ, ìàòðèöÿ ëîã³÷íèõ åëåìåíò³â; ëîã³÷íà ìàòðè÷íà ²Ñ Macrocell ~ ìàòðèöÿ ìàêðîêîì³ðîê (áàçîâèé êðèñòàë ç âåëèêèìè êîì³ðîê) mask-programmable ~ 1. ìàòðè÷íà ²Ñ, ïðîãðàìîâàíà øàáëîíîì 2. áàçîâèé ìàòðè÷íèé êðèñòàë, ïðîãðàìîâàíèé øàáëîíîì master slice ~ 1. ìàòðè÷íà ²Ñ íà îñíîâ³ áàçîâîãî ìàòðè÷íîãî êðèñòàëà 2. áàçîâèé ìàòðè÷íèé êðèñòàë, ÁÌÊ master-slice gate [master-slice logic] ~ ìàòðèöÿ ëîã³÷íèõ åëåìåíò³â, ëîã³÷íà [âåíòèëüíà] ìàòðèöÿ memory ~ 1. ìàòðèöÿ ïàì’ÿò³ 2. ìàñèâ ïàì’ÿò³ mesa p-n diode ~ ä³îäíà ìàòðèöÿ ç ìåçàñòðóêòóðîþ microcell ~ ìàòðèöÿ ì³êðîêîì³ðîê monolithic ~ ìîíîë³òíà ìàòðèöÿ; ìîíîë³òíà ìàòðè÷íà ²Ñ multichip ~ áàãàòîêðèñòàëüíà Ã²Ñ multistrip ~ áàãàòîñìóãîâà ñòðóêòóðà n-channel [negative] MOS ~ 1. n-êàíàëüíà ÌÎÍ-ìàòðèöÿ; ìàòðè÷íà n-êàíàëüíàÿ ÌÎÍ ²Ñ 2. n-êàíàëüíà ÌÎÍ-ñòðóêòóðà
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ass nonoverlapping redundant ~ ìàòðèöÿ ç íàäì³ðíèì ÷èñëîì åëåìåíò³â, ùî íå ïåðåêðèâàþòüñÿ original image data ~ ìàñèâ äàíèõ äèñêðåòèçîâàíîãî ïî÷àòêîâîãî çîáðàæåííÿ original subimage data ~ ìàñèâ äàíèõ äèñêðåòèçîâàíîãî ôðàãìåíòà ïî÷àòêîâîãî çîáðàæåííÿ pattern ~ ìàòðèöÿ çîáðàæåíü ñòðóêòóð (íà ôîòîøàáëîí³) p-channel MOS ~ 1. ð-êàíàëüíà ÌÎÍìàòðèöÿ; ð-êàíàëüíà ÌÎÍ ²Ñ 2. ð-êàíàëüíà ÌÎÍ-ñòðóêòóðà pin-grid ~ 1. ìàòðèöÿ øòûðüêîâûõ âèâîä³â 2. ïëîñêèé êîðïóñ ç ìàòðè÷íèì ðîçòàøóâàííÿì øòûðüêîâûõ âèâîä³â polycell ~ ìàòðèöÿ, ùî ñêëàäàºòüñÿ ç êîì³ðîê ð³çíèõ òèï³â (íàïð. ÒÒË- ³ ÅÇË-êîì³ðîê) processing ~ ìàòðè÷íèé ïðîöåñîð programmable gate ~ ìàòðèöÿ ëîã³÷íèõ åëåìåíò³â, ëîã³÷íà [âåíòèëüíà] ìàòðèöÿ programmable logic ~ ïðîãðàìîâàíà ëîã³÷íà ìàòðèöÿ, ÏËÌ register ~ ðåã³ñòðîâà ìàòðèöÿ semiconductor ~ ìàòðèöÿ íàï³âïðîâ³äíèêîâèõ ïðèëàä³â semicustom ~ íàï³âçàìîâëåíà ìàòðèöÿ Schottky(-cell)~ ìàòðèöÿ êîì³ðîê ÒÒË ç ä³îäàìè Øîòêè Schottky TTL gate ~ ìàòðèöÿ åëåìåíò³â ÒÒË ç ä³îäàìè Øîòêè, ìàòðèöÿ ÒÒËØ-åëåìåíò³â single-layer metal ~ ìàòðèöÿ ç îäíîøàðîâîþ ìåòàë³çàö³ºþ; ìàòðè÷íà ²Ñ ç îäíîøàðîâîþ ìåòàë³çàö³ºþ SOS ~ ìàòðèöÿ ç ÊͲ-ñòðóêòó-ð³é; ìàòðè÷íà ²Ñ ç ÊͲ-ñòðóêòóðîþ standardized ~ ñòàíäàðòíà ìàòðèöÿ; ñòàíäàðòíà ìàòðè÷íà ²Ñ storage logic ~ ëîã³÷íà ìàòðèöÿ, ùî çàïàì’ÿòîâóº structured ~ ñòðóêòóðîâàíà ìàòðèöÿ (òèï áàçîâîãî ìàòðè÷íîãî êðèñòàëà) systolic ~ ìàòðèöÿ ñèñòîë³÷íà (ÏÇÑ) tile(d)~ ìàòðèöÿ áëîê³â (â ïðîãðàìîâàíîìó ëîã³÷íîìó ïðèëàä³) uncommitted logic ~ íåñêîìóòîâàíà ëîã³÷íà ìàòðèöÿ universal ~ óí³âåðñàëüíà ìàòðèöÿ (äëÿ àíàëîãîâèõ ³ öèôðîâèõ ôóíêö³é)
wafer-scale ~ ìàòðèöÿ íà ö³ë³é íàï³âïðîâ³äíèêîâ³é ïëàñòèí³; ìàòðè÷íà ²Ñ íà ö³ë³é íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ x-y ~ ìàòðèöÿ ç ðîçì³ùåííÿì åëåìåíò³â ðÿäêàìè ³ ñòîâïöÿìè 2D quantum box ~ ìàòðèöÿ äâîâèì³ðíèõ êâàíòîâèõ òî÷îê arsenide àðñåí³ä (ç’ºäíàííÿ (ñïëàâ) ìèø’ÿêó ç ìåòàëîì) aluminum ~ àðñåí³ä àëþì³í³þ, AlAs cadmium ~ àðñåí³ä êàäì³þ, CdAs gallium ~ àðñåí³ä ãàë³þ, GaAs indium ~ àðñåí³ä ³íä³þ, InAs arsine àðñèí, ìèø’ÿêîâèñòèé âîäåíü, AsH3 artwork îðèã³íàë (ôîòîøàáëîíó); ôîòîîðèã³íàë; ôîòîòðàôàðåò (äëÿ òîâñòîïë³âêîâèõ òÑ) computer-generated ~ îðèã³íàë, ñïðîåêòîâàíèé çà äîïîìîãîþ ÅÎÌ mask ~ îðèã³íàë; ôîòîîðèã³íàë negative ~ íåãàòèâíå çîáðàæåííÿ [íåãàòèâ] îðèã³íàëó photo ~ ôîòîîðèã³íàë positive ~ ïîçèòèâíå çîáðàæåííÿ [ïîçèòèâ] îðèã³íàëó rubylith ~ ðóáèë³òîâèé îðèã³íàë asher: plasma ~ óñòàíîâêà äëÿ âèäàëåííÿ ôîòîðåçèñòó â (êèñíåâî¿) ïëàçì³ ashing: plasma ~ ïëàçìîâå âèäàëåííÿ (íàïð. çàëèøê³â ôîòîðåçèñòó) ASIC ñïåö³àë³çîâàíà ²Ñ array-based ~ ìàòðè÷íà ñïåö³àë³çîâàíà ²Ñ (íàïð. íà áàçîâîìó ìàòðè÷íîìó êðèñòàë³) standard-ñåll based ~ ñïåö³àë³çîâàíà ²Ñ íà á³áë³îòå÷íèõ åëåìåíòàõ asperity íåð³âí³ñòü (ïîâåðõí³); âèñòóï aspirator: chip ~ âàêóóìíèé ñõâàò äëÿ êðèñòàë³â assay: gravimetric ~ ãðàâ³ìåòðè÷íèé àíàë³ç potentiometric ~ àíàë³ç ïîòåíö³îìåòðà assemblage 1. çá³ðêà; ìîíòàæ 2. çá³ðêà; âóçîë assembler 1. ñêëàäàëüíî-ìîíòàæíà óñòàíîâêà 2. ñêëàäàëüíèê; ìîíòàæíèê chip ~ 1. óñòàíîâêà äëÿ ñêëàäàííÿ (ìîíòàæó) êðèñòàë³â (â êîðïóñè); óñòàíîâêà äëÿ ìîíòàæó êðèñòàë³â (íà ïëàò³) 2. ïðîãðàìà
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att àðõ³òåêòóðíîãî ïðîåêòóâàííÿ [ñêëàäàëüíèê] êðèñòàëà flat-ðàñê ~ 1. óñòàíîâêà äëÿ ñêëàäàííÿ (ìîíòàæó) êðèñòàë³â â ïëîñê³ êîðïóñè 2. óñòàíîâêà äëÿ ìîíòàæó ïëîñêèõ êîðïóñ³â (íà ïëàò³) hybrid ~ óñòàíîâêà äëÿ ñêëàäàííÿ (ìîíòàæó)] Ã²Ñ software ~ ñêëàäàëüíèê ïðîãðàì, ïðîãðàìíèé àñåìáëåð surface-mount ~ óñòàíîâêà ïîâåðõíåâîãî ìîíòàæó assembly 1. çá³ðêà; ìîíòàæ 2. çá³ðêà; âóçîë beam-lead ~ áëîê íà êîìïîíåíòàõ ç áàëî÷íèìè âèâîäàìè beam tape-automated ~ àâòîìàòèçîâàíà çá³ðêà ²Ñ íà ñòð³÷êîâîìó íîñ³¿ ç áàëî÷íèìè âèâîäàìè charge-shift ~ ïðèëàä ç ïåðåíåñåííÿì çàðÿäó, ÏÏÇ chip ~ 1. çá³ðêà êðèñòàë³â (â êîðïóñè); ìîíòàæ êðèñòàë³â (íà ïëàò³) 2. (ã³áðèäíà ì³êðîçá³ðêà) chip-and-substrate ~ ìîíòàæ êðèñòàë³â íà ï³äêëàäö³ chip-carrier ~ ìîíòàæ êðèñòàë³â íà êðèñòàëîíîñ³¿ chip-on-board ~ (äðîòÿíèé) ìîíòàæ êðèñòàë³â íà äðóêàðñüê³é ïëàò³ “cut and paste” ~ çá³ðêà ìåòîäîì «ðîçð³çàé ³ ñêëåþé» (äëÿ âèçíà÷åííÿ àðõ³òåêòóðè ²Ñ) flip-chip ~ ìîíòàæ ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà header ~ ìîíòàæ íà ï³äñòàâ³ êîðïóñó hybrid ~ 1. çá³ðêà Ã²Ñ 2. ã³áðèäíà ì³êðîçá³ðêà microelectronic modular ~ ì³êðîìîäóëü molded ~ âóçîë, ùî ãåðìåòèçóºòüñÿ (ïåðåâàæíî ïëàñòìàñîþ) multichip ~ 1. áàãàòîêðèñòàëüíèé ìîíòàæ 2. áàãàòîêðèñòàëüíà ì³êðîçá³ðêà operating ~ ôóíêö³îíàëüíèé áëîê semiconductor ~ 1. çá³ðêà íàï³âïðîâ³äíèêîâèõ ïðèëàä³â 2. íàï³âïðîâ³äíèêîâà ì³êðîçá³ðêà step-by-step ~ ïîñë³äîâíèé ìîíòàæ surface-mounted ~ 1. ïîâåðõíåâèé ìîíòàæ 2. çá³ðêà íà êîìïîíåíòàõ ïîâåðõíåâîãî ìîíòàæó assertion:
timing ~ òèì÷àñîâå òâåðäæåííÿ (âèçíà÷åííÿ ïîñë³äîâíîñò³ çì³íè òàêòîâèõ, óïðàâëÿþ÷èõ ³ ³íôîðìàö³éíèõ ñèãíàë³â) assignment: column ~ ðîçïîä³ë êîëîíîê (ìàòðèö³) gate ~ ðîçïîä³ë ëîã³÷íèõ åëåìåíò³â (ïðèçíà÷åííÿ ëîã³÷íèì åëåìåíòàì ô³çè÷íî ðåàë³çîâóâàíèõ òðàíçèñòîðíèõ ñòðóêòóð) pin ~ ðîçïîä³ë êîíòàêòíèõ ìàéäàí÷èê³â row ~ ðîçïîä³ë ðÿäê³â (ìàòðèö³) Association: Electronic Industries ~ Àñîö³àö³ÿ åëåêòðîííî¿ ïðîìèñëîâîñò³ (ÑØÀ) Semiconductor Industry ~ Àñîö³àö³ÿ íàï³âïðîâ³äíèêîâî¿ ïðîìèñëîâîñò³ (ÑØÀ) assumption: single-stuck fault [SSF] ~ ïðèïóùåííÿ ïðî ³ñíóâàííÿ îäèíî÷íèõ êîíñòàíòíèõ íåñïðàâíîñòåé assurance: CAD system sofware quality ~ çàáåçïå÷åííÿ [ãàðàíòóâàííÿ] ÿêîñò³ ïðîãðàìíîãî çàáåçïå÷åííÿ ÑÀÏÐ neutron-hardness ~ çàáåçïå÷åííÿ ðàä³àö³éíî¿ ñò³éêîñò³ äî ïîòîêó íåéòðîí³â atmosphere: humid-hydrogen ~ àòìîñôåðà âîëîãîãî âîäíþ inert ~ àòìîñôåðà ³íåðòíîãî ãàçó oxidation [oxidizing] ~ îêèñëþâàëüíà àòìîñôåðà; îêèñëþâàëüíå ñåðåäîâèùå reducing ~ â³äíîâíà àòìîñôåðà; â³äíîâíå ñåðåäîâèùå atom: acceptor ~ àêöåïòîðíèé àòîì diffusing ~ äèôóíäóþ÷èé àòîì donor ~ äîíîðíèé àòîì dopant ~ àòîì ëåãóþ÷î¿ äîì³øêè foreign ~ äîì³øêîâèé àòîì (íåáàæàíî¿ äîì³øêè) impurity ~ äîì³øêîâèé àòîì interstitial ~ ì³æâóçëîâèé àòîì, âïðîâàäæåíèé àòîì n-type dopant ~ äîíîðíèé àòîì photo-generated ~s àòîìè, íàðîäæåí³ ôîòîäèñîö³àö³ºþ p-type dopant ~ àêöåïòîðíèé àòîì substitution ~ àòîì çàì³ùåííÿ attachability:
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ban die ~ àäãåç³éíà çäàòí³ñòü êðèñòàëà (ïî â³äíîøåííþ äî ï³äêëàäêè) attacher: frame ~ óñòàíîâêà äëÿ ïðèêð³ïëåííÿ âèâ³äíî¿ ðàìêè (íàïð. äî îñíîâè êîðïóñó) attachment 1. (ïðè) ºäíàííÿ; (ïðè) êð³ïëåííÿ 2. ïðèñòîñóâàííÿ; ïðèíàëåæí³ñòü die ~ ïðèêð³ïëåííÿ [ïðèºäíàííÿ, ïîñàäêà] êðèñòàëà (íàïð. íà êðèñòàëîíîñ³¿) åðîõó die ~ ïðèêð³ïëåííÿ êðèñòàëà åïîêñèäíîþ ñìîëîþ eutectic die ~ ïðèêð³ïëåííÿ êðèñòàëà åâòåêòè÷íèì ïðèïîºì flip-chip ~ ìîíòàæ ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà flywire ~ ïðèºäíàííÿ òîíêèõ äðîòÿíèõ âèâîä³â lead-frame ~ ïðèêð³ïëåííÿ âèâ³äíî¿ ðàìêè (íàïð. äî îñíîâè êîðïóñó) reflow ~ ïðèêð³ïëåííÿ (íàïð. êðèñòàëà) îïëàâëåííÿì ïðèïîþ solder die ~ ïðèêð³ïëåííÿ êðèñòàëà ïðèïîºì audit: conformance ~ êîíòðîëü íà â³äïîâ³äí³ñòü (íàïð. ñòàíäàðòàì) quality ~ êîíòðîëü ÿêîñò³ spec. ~ êîíòðîëü íà â³äïîâ³äí³ñòü òåõí³÷íèì óìîâàì autodope ïðîâîäèòè àâòîëåãóâàííÿ, àâòîëåãóâàòè automation: design ~ àâòîìàòèçàö³ÿ ïðîåêòóâàííÿ flexible ~ ãíó÷êà àâòîìàòèçàö³ÿ front-end ~ àâòîìàòèçàö³ÿ ïî÷àòêîâîãî åòàïó âèðîáíèöòâà layout ~ àâòîìàòèçàö³ÿ ðîçðîáêè òîïîëî㳿 autoregistration ñàìîñóì³ùåííÿ avalanche ëàâèíà, ëàâèííèé ïðîöåñ electron ~ åëåêòðîííà ëàâèíà electron-hole ~ åëåêòðîííî-ä³ðêîâà ëàâèíà axis: crystal ~ êðèñòàëîãðàô³÷íà â³ñü twin(ning)~ äâ³éíèêîâà â³ñü
B backfill: V-groove isolation polycrystal ~ çàïîâíåííÿ V-ïîä³áíèõ ³çîëþþ÷èõ êàíàâîê ïîë³êðèñòàë³÷íèì êðåìí³ºì
backing ï³äøàð; ï³äêëàäêà backlap ïîë³ðîâêà íèæíüî¿ ïîâåðõí³ (ï³äêëàäêè) backscattering çâîðîòíå ðîçñ³þâàííÿ Rutherford ~ çâîðîòíå ðåçåðôîðäîâñüêå ðîçñ³þâàííÿ backstreaming: oil ~ íàò³êàííÿ ïàðè ìàñëà (ó âàêóóìíèé îá’ºì) ultra-low ~ íàäíèçüêå íàò³êàííÿ (ó âàêóóìíèé îá’ºì) backplane îá’ºäíóâàëüíà ïëàòà; îñíîâíà ïëàòà; ñêëàäàëüíà ïëàòà backup 1. ðåçåðâíèé ïðèñòð³é ðåçåðâóþ÷èé ïðèñòð³é 2. ðåçåðâóâàííÿ bag: antistatic ~ àíòèñòàòè÷íèé ïàêåò bake 1. â³äïàë, îáïàë, òåðìîîáðîáêà 2. ñóøêà (íàïð. ó ôîòîë³òîãðàô³¿) hard ~ 1. òåðìîîáðîáêà ïðè ï³äâèùåí³é òåìïåðàòóð³ 2. äðóãà ñóøêà (ôîòîðåçèñòà) post ~ 1. òåðìîîáðîáêà ï³ñëÿ òåõíîëîã³÷íî¿ îïåðàö³¿ 2. ñóøêà ïðîÿâëåíîãî ôîòîðåçèñòà postdevelopment [postexposure] ~ ñóøêà ïðîÿâëåíîãî ôîòîðåçèñòà soft ~ 1. òåðìîîáðîáêà ïðè íåâèñîê³é òåìïåðàòóð³ 2. äðóãà ñóøêà (ôîòîðåçèñòà) bakeout â³äïàë; îáïàë, òåðìîîáðîáêà (äèâ. òæ bake) ball êóëüêîâèé âèâ³ä, êóëüêà tinned ~ ëóäæåíèé êóëüêîâèé âèâ³ä solder ~ êóëüêîâèé âèâ³ä ç ïðèïîþ ballast: resist ~ áàëàñòíèé ðåçèñòîð band 1. (åíåðãåòè÷íà) çîíà 2. ä³àïàçîí (÷àñòîò); ñìóãà (÷àñòîò) allowed ~ äîçâîëåíà çîíà empty ~ â³ëüíà çîíà energy ~ åíåðãåòè÷íà çîíà filled ~ çàïîâíåíà çîíà flat ~ ïëîñêà çîíà forbidden ~ çàáîðîíåíà çîíà impurity ~ äîì³øêîâà çîíà îñcupied ~ çàïîâíåíà çîíà ðårmitted ~ äîçâîëåíà çîíà speed-power ~ ä³àïàçîí äîáóòê³â øâèäêî䳿 íà ïîòóæí³ñòü ðîçñ³þâàííÿ (äëÿ ëîã³÷íèõ ²Ñ) unoccupied ~ â³ëüíà çîíà valence ~ âàëåíòíà çîíà
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bea bandgap çàáîðîíåíà (åíåðãåòè÷íà) çîíà; øèðèíà çàáîðîíåíî¿ (åíåðãåòè÷íî¿) çîíè (äèâ. ò-æ gap) banding óòâîðåííÿ ñìóã (íà íàï³âïðîâ³äíèêîâèõ çëèòêàõ) impurity ~ íåîäíîð³äíèé ðîçïîä³ë äîì³øêè (ó âèãëÿä³ ñìóã) ïðè âèðîùóâàíí³ çëèòê³â bandwidth 1. øèðèíà (åíåðãåòè÷íî¿) çîíè 2. øèðèíà ñìóãè (÷àñòîò) forbidden ~ øèðèíà çàáîðîíåíî¿ çîíè bank ãðóïà; íàá³ð; áëîê | ãðóïóâàòè; îá’ºäíóâàòè bar (íàï³âïðîâ³äíèêîâèé) çëèòîê; áðóñîê heating ~ íàãð³âàëüíèé ñòðèæåíü (ïå÷³) n-type ~ çëèòîê (ç åëåêòðîïðîâ³äí³ñòþ) nòèïó zone-levelled ~ çëèòîê, îäåðæàíèé ìåòîäîì çîííîãî âèð³âíþâàííÿ barrier 1. ïîòåíö³éíèé áàð’ºð 2. ïåðåõ³ä (äèâ. ò-æ junction) 3. çàáîðîíåíà îáëàñòü (â îäíîìó àáî äåê³ëüêîõ øàðàõ ìåòàë³çàö³¿ ²Ñ) diffusion ~ äèôóç³éíèé áàð’ºð, áàð’ºð äëÿ äèôó糿 isolation ~ ³çîëþþ÷èé áàð’ºð Josephson ~ ïåðåõ³ä Äæîçåôñîíà, äæîçåôñîíîâñüêèé ïåðåõ³ä metal-semiconductor ~ ïåðåõ³ä ìåòàë– íàï³âïðîâ³äíèê; áàð’ºð Øîòê³ organic-on-organic contact ~ áàð’ºð Øîòê³ íà îñíîâ³ îðãàí³÷íèõ ïë³âîê oxidation ~ øàð, ïåðåøêîäæàþ÷èé îêñèäóâàííþ (íàïð. ìàñêóþ÷èé øàð) p-n ~ p–n-ïåðåõ³ä potential ~ ïîòåíö³éíèé áàð’ºð quasi-Schottky ~ êâàç³áàð’ºð Øîòê³ resonant tunneling ~ áàð’ºð â ñòðóêòóð³ ç ðåçîíàíñíèì òóíåëþâàííÿì (åëåêòðîí³â) Schottky ~ áàð’ºð Øîòê³ short period superlattice [sps] ~ áàð’ºð ó âèãëÿä³ íàäãðàòêè ç êîðîòêèì ïåð³îäîì unmasked ~ íåìàñêîâàíèé ïåðåõ³ä base 1. áàçà, áàçîâà îáëàñòü 2. îñíîâà; ï³äêëàäêà boron ~ áàçà, ëåãîâàíà áîðîì diffused ~ äèôóç³éíà áàçà extrinsic ~ ïàñèâíà áàçà insulating ~ ä³åëåêòðè÷íà [åëåêòðî³çîëÿö³éíà] ï³äêëàäêà intrinsic ~ àêòèâíà áàçà
metal ~ 1. ìåòàëåâà áàçà (òðàíçèñòîðà ç ìåòàëåâîþ áàçîþ) 2. ìåòàëåâà îñíîâà (ïëàòà) oxide-walled ~ áàçîâà îáëàñòü, îáìåæåíà ç á³÷íèõ ñòîð³í øàðîì îêñèäó package ~ îñíîâà êîðïóñó permeable ~ ïðîíèêíà [ñ³òêîâà] áàçà (òðàíçèñòîðà ç ïðîíèêíîþ áàçîþ) base-insert ïîãëèáëåíà (äîïîì³æíà) áàçîâà îáëàñòü basis: link-by-link ~ ëàíêà çà ëàíêîþ (íàçâà ìåòîäîëî㳿 ïðîåêòóâàííÿ Á²Ñ) basket: wafer ~ êàñåòà äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí batch ãðóïà; ïàðò³ÿ, ãðóïóâàòè batch-fabricated, batch-produced âèãîòîâëåíèé çà ãðóïîâîþ òåõíîëî㳺þ bath âàííà electrolythic [electroplating] ~ åëåêòðîë³òè÷íà âàííà, åëåêòðîë³çåð etch ~ òðàâèëüíà âàííà plating ~ åëåêòðîë³òè÷íà âàííà, åëåêòðîë³çåð bay: diffusion ~ áàãàòîòðóáíà äèôóç³éíà ñèñòåìà bead: photoresist edge ~ íàò³êàííÿ ôîòîðåçèñòà íà êðà¿ êðåìí³ºâî¿ ïëàñòèíè beak: bird’s ~ 1. äåôåêò òèïó «ïòàøèíèé äçüîá» (ïðè á³÷íîìó ðîçòðàâëåíí³ îêñèäó â ²Ñ ç á³÷íîþ ä³åëåêòðè÷íîþ ³çîëÿö³ºþ) 2. òî÷êîâèé ïðîêîë (â îêñèäíîìó øàð³) 3. ³íñòðóìåíò ó âèãëÿä³ «ïòàøèíîãî äçüîáà» (äëÿ òåðìîêîìïðåñ³éíî¿ çâàðêè) beam ïðîì³íü; ïó÷îê electron-compensated ~ ion êîìïåíñîâàíèé (åëåêòðîíàìè) ³îííèé ïó÷îê excimer ~ ïðîì³íü åêñèìåðíîãî ëàçåðà Gaussian ~ ïó÷îê ç ³íòåíñèâí³ñòþ, ðîçïîä³ëåíîþ ïî ïåðåòèíó çà çàêîíîì Ãàóñà impurity-ion ~ ïó÷îê ³îí³â äîì³øêè Kauffman ion ~ ïó÷îê ³îí³â ç äæåðåëà Êàóôìàíà microfocused ion ~ ãîñòðîñôîêóñîâàíèé ³îííèé ïðîì³íü, ³îííèé ì³êðîçîíä molecular ~ ìîëåêóëÿðíèé ïó÷îê îõygen plasma ~ ïó÷îê êèñíþ ç ïëàçìè
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bla plasma ~ ïëàçìîâèé ïó÷îê reactive-ion ~ ïó÷îê õ³ì³÷íî àêòèâíèõ ³îí³â shaped ~ ïðîì³íü ïðÿìîêóòíîãî ïåðåòèíó beam-leaded ç áàëî÷íèìè âèâîäàìè beamwriter ë³òîãðàô³ÿ ñêàíóâàííÿ ïðîìåíÿ bed nails ïëàòà ç øòûðüêàìè òèïó «ëîæå ç öâÿõàìè» (äëÿ òåñòóâàííÿ çìîíòîâàíî¿ äðóêàðñüêî¿ ïëàòè) behavior 1. ïîâåä³íêà (²Ñ) 2. ïîâåä³íêîâèé îïèñ (ïðîåêòó ñèñòåìè â ³íòåãðàëüíîìó âèêîíàíí³ â òåðì³íàõ ôóíêö³îíàëüíèõ ³ òèì÷àñîâèõ çâ’ÿçê³â ì³æ âõîäàìè ³ âèõîäàìè ñèñòåìè) 3. ðåæèì (ðîáîòè) 4. õàðàêòåðèñòèêà, âëàñòèâ³ñòü ~ circuit design ïîâåä³íêà íà åòàï³ åëåêòðè÷íîãî ðîçðàõóíêó external ~ çîâí³øíÿ ïîâåä³íêà, ïîâåä³íêà ïî âõîäó-âèõîäó functional ~ ôóíêö³îíàëüíà ïîâåä³íêà, ïîâåä³íêà íà ôóíêö³îíàëüíîìó ð³âí³ output ~ ïîâåä³íêà ïî âèõîäó semiconductor ~ 1. ðåæèì ðîáîòè íàï³âïðîâ³äíèêîâîãî ïðèëàäó 2. õàðàêòåðèñòèêà [âëàñòèâ³ñòü] íàï³âïðîâ³äíèêà steady-state ~ ñòàòè÷íèé ðåæèì timewise ~ ïîâåä³íêà â ÷àñ³ transient ~ ïåðåõ³äíèé ðåæèì worst-case timing ~ ïîâåä³íêà, ïðè ÿêíàéã³ðøèõ òèì÷àñîâèõ ïàðàìåòðàõ bench 1. ìîíòàæíèé ñò³ë 2. ñòåíä clean ~ ðîáî÷å ì³ñöå (ìîíòàæíèêà) â ÷èñò³é ê³ìíàò³ clean air ~ ðîáî÷å ì³ñöå ç î÷èùåíèì ïîâ³òðÿì (â ñêàôàíäð³ çíåïèëþâàííÿ) laminar flow ~ ìîíòàæíèé ñò³ë ç ëàì³íàðíèì ïîòîêîì (î÷èùåíîãî) ïîâ³òðÿ test ~ âèïðîáóâàëüíèé ñòåíä bender âåðñòàò äëÿ ãíóòòÿ lead ~ âåðñòàò äëÿ ãíóòòÿ äëÿ ôîðìóâàííÿ âèâîä³â (êîìïîíåíò³â) bending: band ~ âèãèí [âèêðèâëåííÿ] ìåæ (åíåðãåòè÷íî¿) çîíè beryllia îêñèä áåðèë³þ, ÂåÎ glazed ~ ãëàçóðîâàíà ï³äêëàäêà ç îêñèäó áåðèë³ÿ beta 1. áåòà, â (êîåô³ö³ºíò ï³äñèëåííÿ òðàíçèñòîðà ïî ñòðóìó â ñõåì³ ³ç çàãàëüíèì åì³òåðîì) 2. áåòà-âèïðîì³íþâàííÿ
direct-current ~ êîåô³ö³ºíò ï³äñèëåííÿ ïî ïîñò³éíîìó ñòðóìó â ñõåì³ ³ç çàãàëüíèì åì³òåðîì inverse ~ ³íâåðñíèé êîåô³ö³ºíò ï³äñèëåííÿ ïî ñòðóìó â ñõåì³ ³ç çàãàëüíèì åì³òåðîì bewildering 1. â³äõèëåííÿ 2. íåâ’ÿçêà (íàáëèæåíîãî ð³øåííÿ) bias 1. çì³ùåííÿ; â³äõèëåííÿ | çì³ùóâàòè; â³äõèëÿòè 2. íàïðóãà çì³ùåííÿ, (åëåêòðè÷íå) çì³ùåííÿ | ïîäàâàòè íàïðóãó çì³ùåííÿ, ïîäàâàòè çì³ùåííÿ automatic ~ àâòîìàòè÷íå çì³ùåííÿ back ~ íàïðóãà çâîðîòíîãî çì³ùåííÿ, çâîðîòíº çì³ùåííÿ cutoff ~ çàìèêàþ÷à íàïðóãó çì³ùåííÿ etching ~ êëèí òðàâëåííÿ forward ~ íàïðóãà ïðÿìîãî çì³ùåííÿ, ïðÿìå çì³ùåííÿ gate ~ 1. çì³ùåííÿ çàòâîðà 2. íàïðóãà çì³ùåííÿ íà çàòâîð³ reverse ~ íàïðóãà çâîðîòíîãî çì³ùåííÿ, çâîðîòíº çì³ùåííÿ billet çàãîòîâêà; (íàï³âïðîâ³äíèêîâèé) çëèòîê semiconductor ~ íàï³âïðîâ³äíèêîâèé çëèòîê bin áóíêåð, ìàãàçèí (äëÿ êîìïîíåíò³â) binder çâ’ÿçóþ÷å (ðå÷îâèíà) glass [vitreous] ~ ñêëÿíå çâ’ÿçóþ÷å binding: immutable ~ ïîñò³éíèé çâ’ÿçîê; ïîñò³éíå ç’ºäíàííÿ module ~ çá³ðêà ìîäóë³â signal ~ çá³ðêà ñèãíàëüíèõ øèí biochip á³î÷³ï, á³îêðèñòàë (ôóíêö³îíàëüíèé åëåêòðîííèé ïðèñòð³é, ñôîðìîâàíèé â îðãàí³÷íîìó ìàòåð³àë³) bipolar 1. á³ïîëÿðíèé òðàíçèñòîð; á³ïîëÿðíà ²Ñ, ²Ñ íà á³ïîëÿðíèõ òðàíçèñòîðàõ 2. á³ïîëÿðíèé TTL-compatible ~ á³ïîëÿðíà ²Ñ, ñóì³ñíà ç ÒÒË ²Ñ bite: “mouse ~s” íåð³âí³ êðà¿ ìåòàë³çàö³¿ (äåôåêò ï³ñëÿ òðàâëåííÿ) bit-slice ñåêö³îíîâàíèé ì³êðîïðîöåñîð blade 1. äèñê; ïîëîòíî (óñòàíîâêè äëÿ ð³çàííÿ) 2. óñòàíîâêà äëÿ ð³çàííÿ annular ~ äèñê ç âíóòð³øíüîþ ð³æó÷îþ êðîìêîþ
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boa diamond (impregnated) ~ äèñê ç àëìàçíîþ ð³æó÷îþ êðîìêîþ doctor ~ ðàêåëü, í³æ ðàêåëÿ electrodeposited diamond ~ äèñê ç àëìàçíîþ ð³æó÷îþ êðîìêîþ, îäåðæàíîþ ìåòîäîì åëåêòðîë³òè÷íîãî îñàäæåííÿ multiple ~s íàá³ð ð³æó÷èõ äèñê³â (äëÿ ï³äâèùåííÿ ïðîäóêòèâíîñò³ ð³çàííÿ) peripheral ~ äèñê ³ç çîâí³øíüîþ ð³æó÷îþ êðîìêîþ saw ~ ð³æó÷èé äèñê; ð³æó÷å ïîëîòíî sintered-diamond ~ äèñê ç àëìàçíîþ ð³æó÷îþ êðîìêîþ, ñôîðìîâàíî¿ ñï³êàííÿì blank 1. íåîáðîáëåíà ï³äêëàäêà; íåçìîíòîâàíà ï³äêëàäêà 2. çàãîòîâêà (íàïð. äëÿ äðóêàðñüêî¿ ïëàòè, ôîòîøàáëîíó) antistatic mask ~ àíòèñòàòè÷íà ïëàñòèíà äëÿ ôîòîøàáëîíó screened ñåramic ~ êåðàì³÷íà ï³äêëàäêà ç íàäðóêîâàíèì ìàëþíêîì ULA ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç íåñêîìóòîâàíèìè ëîã³÷íèìè ìàòðèöÿìè blanket: inert-gas ~ ñåðåäîâèùå ³íåðòíîãî ãàçó bleeding ðîçìèò³ñòü (íàïð. çîáðàæåííÿ) bleed-out ñïîâçàííÿ (íàïð. øàðó êëåþ) blemish ïîâåðõíåâèé äåôåêò; ïëÿìà (íàïð. íà ïîêðèòò³) blister çäóòòÿ; ñïó÷óâàííÿ (íàïð. øàðóþ÷è ôîòîðåçèñòà) bloating íàáóõàííÿ; çäóòòÿ (íàïð. øàðóþ÷è ôîòîðåçèñòà) block áëîê; âóçîë; ãðóïà à ~ with à repetitive structure áëîê ³ç ñòðóêòóðîþ, ùî ïîâòîðþºòüñÿ (íàïð. ÏËÌ, ÏÇÏ, ÇÓÏÂ, ÀËÓ àáî ñòåêîâèé ðåã³ñòð) basic ~ ñòàíäàðòíèé áëîê building ~ ñòàíäàðòíèé áëîê; êîíñòðóêòèâíèé áëîê contact ~ 1. áëîê (òåñòîâîãî êðèñòàëà) äëÿ êîíòðîëþ ÿêîñò³ ³ îïîðó êîíòàêò³â 2. ãðóïà êîíòàêò³â contact leakage ~ ãðóïà êîíòàêò³â äëÿ ïåðåâ³ðêè ñòðóì³â âèòîêó (â òåñòîâîìó êðèñòàë³) diffused-resistor ~ ãðóïà åëåìåíò³â (òåñòîâîãî êðèñòàëà) äëÿ êîíòðîëþ äèôóç³éíèõ ðåçèñòîð³â fault-tolerant building ~ â³äìîâîñò³éêèé êîíñòðóêòèâíèé áëîê
fine dimensional ~ ìàëîãàáàðèòíèé áëîê functional ~ ôóíêö³îíàëüíèé áëîê large dimensional ~ âåëèêîãàáàðèòíèé áëîê logic ~ ëîã³÷íèé áëîê (÷àñòî ì³ñòèòü äåê³ëüêà äåñÿòê³â ëîã³÷íèõ åëåìåíò³â) metal quality ~ ãðóïà åëåìåíò³â (òåñòîâîãî êðèñòàëà) äëÿ êîíòðîëþ ìåòàë³çàö³¿ pad ~ ãðóïà êîíòàêòíèõ ìàéäàí÷èê³â parametrizable ~ ïàðàìåòðèçîâàíèé áëîê regular ~ áëîê ç ðåãóëÿðíîþ ñòðóêòóðîþ test ~ òåñòîâèé áëîê, ãðóïà òåñòîâèõ ñòðóêòóð blockage çàáîðîíà (ïðè òðàñóâàíí³ â ÑÀÏÐ) blower: destaticizing ~ âåíòèëÿòîð äëÿ íåéòðàë³çàö³¿ åëåêòðîñòàòè÷íèõ çàðÿä³â blurring: image ~ ðîçìèòòÿ çîáðàæåííÿ pattern ~ ðîçìèòòÿ ìàëþíêà penumbral ~ íàï³âò³íüîâå ðîçìèòòÿ board ïëàòà; äðóêàðñüêà ïëàòà (äèâ. ò-æ card) bare ~ íåçìîíòîâàíà ïëàòà ceramic tape multilayer ~ áàãàòîøàðîâà äðóêàðñüêà ïëàòà íà «ñòð³÷êîâ³é» êåðàì³÷í³é ï³äêëàäö³ chip ~ ïëàòà äëÿ ìîíòàæó êðèñòàë³â composite ~ áàãàòîøàðîâà äðóêîâàíà ïëàòà daughter ~ äðóêàðñüêà ïëàòà ïåðøîãî ð³âíÿ DIP ~ ïëàòà äëÿ ìîíòàæó ²Ñ â DIP-êîðïóñàõ edge ~ êðàéîâà ïëàòà fine-like ~ ïðåöèç³éíà ïëàòà (íàïð. ç âèñîêîþ ãóñòèíîþ ðîçì³ùåííÿ ç’ºäíàíü) high-density ~ äðóêîâàíà ïëàòà ç âèñîêîþ ãóñòèíîþ ìîíòàæó hybrid-circuit ~ ïëàòà äëÿ (ìîíòàæó) Ã²Ñ known-good ~ åòàëîííà ïëàòà loaded ~ çìîíòîâàíà ïëàòà mother ~ îá’ºäíóâàëüíà ïëàòà, äðóêîâàíà ïëàòà äðóãîãî ð³âíÿ; îñíîâíà ïëàòà multiwire ~ ïëàòà äëÿ áàãàòîïðîâ³äíîãî ìîíòàæó populated ~ çìîíòîâàíà ïëàòà printed circuit ~ äðóêàðñüêà ïëàòà programmable silicon circuit ~ ïðîãðàìîâàíà êðåìí³ºâà ïëàòà äëÿ ìîíòàæó surface-mounted ~ ïëàòà äëÿ ïîâåðõíåâîãî ìîíòàæó unloaded [unpopulated] ~ íåçìîíòîâàíà ïëàòà
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bon wire-wrap ~ ïëàòà äëÿ ìîíòàæó ìåòîäîì face ~ ç’ºäíàííÿ, îäåðæàíå ìåòîäîì íàêðóòêè ïåðåâåðíåíîãî êðèñòàëà boat 1. ÷îâíèê 2. êàñåòà glass ~ ñêëÿíå ç’ºäíàííÿ; ñêëÿíèé ñïàé cleaning ~ êàñåòà äëÿ î÷èùåííÿ nail-head ~ ç’ºäíàííÿ, îäåðæàíå ìåòîäîì íàï³âïðîâ³äíèêîâèõ ïëàñòèí êóëüêîâî¿ òåðìîêîìïðåñ³¿ CVD ~ êàñåòà äëÿ õ³ì³÷íîãî îñàäæåííÿ ç solder ~ ïàÿíå ç’ºäíàííÿ ïàðîâî¿ ôàçè solderless ~ áåçñïàéíå [íåïàÿíå] ç’ºäíàííÿ diffusion ~ ÷îâíèê äëÿ äèôóç³éíî¿ ïå÷³ sound ~ ì³öíå ç’ºäíàííÿ furnace ~ ÷îâíèê äëÿ òåðì³÷íî¿ îáðîáêè â stitch ~ ç’ºäíàííÿ, îäåðæàíå ìåòîäîì ïå÷³ òåðìîêîìïðåñ³éíî¿ çâàðêè «çøèâàííÿì», growth ~ ÷îâíèê äëÿ âèðîùóâàííÿ ñòåæêîâîå ç’ºäíàííÿ êðèñòàë³â thermal-pulse ~ ç’ºäíàííÿ, îäåðæàíå polysilicon ~ ÷îâíèê ç ïîë³êðèñòàë³÷íîãî ìåòîäîì òåðìî³ìïóëüñíî¿ çâàðêè êðåìí³þ thermocompression ~ òåðìîêîìïðåñ³éíå body 1. ï³äêëàäêà 2. ò³ëî êðèñòàëà ç’ºäíàííÿ carrier ~ íåñó÷à ï³äêëàäêà ultrasonic ~ ç’ºäíàííÿ, îäåðæàíå ìåòîäîì compound-semiconductor ~ ï³äêëàäêà ç óëüòðàçâóêîâî¿ çâàðêè íàï³âïðîâ³äíèêîâîãî ñïëàâó (ñïîëóêè) wire ~ ç’ºäíàííÿ äðîòÿíèõ âèâîä³â, äðîòÿíå epitaxial ~ ï³äêëàäêà ç åï³òàêñ³àëüíèì ç’ºäíàííÿ øàðîì bondability çä³áí³ñòü äî çâàðêè, ñâàðþâàí³ñòü intrinsic ~ íàï³âïðîâ³äíèêîâà ï³äêëàäêà thermocompression ~ çä³áí³ñòü äî âëàñíî¿ åëåêòðîïðîâ³äíîñò³ òåðìîêîìïðåñ³éíî¿ çâàðêè package ~ îñíîâà êîðïóñó wire ~ ñâàðþâàí³ñòü äðîòó resistor ~ ò³ëî ðåçèñòîðà unitary ~ ñóö³ëüíà bonder 1. óñòàíîâêà òåðìîêîìïðåñ³éíî¿ [ìîíîë³òíà] ï³äêëàäêà çâàðêè 2. óñòàíîâêà äëÿ ìîíòàæó (íàïð. bomb: êðèñòàë³â íà êðèñòàëîíîñ³¿) freon ~ ôðåîíîâà áîìáà ball ~ óñòàíîâêà êóëüêîâî¿ bombardment: òåðìîêîìïðåñ³éíî¿ çâàðêè alpha-particle ~ áîìáàðäóâàííÿ àëüôàbeam tape-automated (bonding) ~ ÷àñòêàìè àâòîìàòèçîâàíà óñòàíîâêà äëÿ ïðèºäíàííÿ energetic ion ~ áîìáàðäóâàííÿ êðèñòàë³â äî áàëî÷íèõ âèâîä³â íà åíåðãåòè÷íèìè ³îíàìè (>100 åÂ) ñòð³÷êîâîìó íîñ³¿ (ç âèâ³äíèìè ðàìêàìè) ion ~ ³îííå áîìáàðäóâàííÿ BTAB ~ äèâ. beam tape-automated (bondbond òåðìîêîìïðåñ³éíå ç’ºäíàííÿ; çâàðíå ing) ç’ºäíàííÿ; ç’ºäíàííÿ | çâàðþâàòè; bonder die ~ óñòàíîâêà äëÿ ìîíòàæó ñïîëó÷àòè, ïðèºäíóâàòè êðèñòàë³â aluminum-wire ~ òåðìîêîìïðåñ³éíå flip-chip aligner ~ óñòàíîâêà ñóì³ùåííÿ ³ ç’ºäíàííÿ àëþì³í³ºâîãî äðîòó (íàïð. ç ìîíòàæó ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà êîíòàêòíèì ìàéäàí÷èêîì) hot gas ~ óñòàíîâêà ïàÿííÿ ñòðóìåíåì Au-Al ~ òåðìîêîìïðåñ³éíå ç’ºäíàííÿ ãàðÿ÷îãî ãàçó (äëÿ îïëàâëåííÿ ïðèïîºì) çîëîòîãî äðîòó ç àëþì³í³ºâèì êîíòàêòíèì hot-tip ~ óñòàíîâêà òåðìîêîìïðåñ³éíî¿ ìàéäàí÷èêîì çâàðêè ball ~ ç’ºäíàííÿ, îäåðæàíå ìåòîäîì hybrid (die) ~ óñòàíîâêà äëÿ ìîíòàæó òÑ, êóëüêîâî¿ òåðìîêîìïðåñ³¿ óñòàíîâêà äëÿ ìîíòàæó êðèñòàë³â íà ïëàò³ die ~ ç’ºäíàííÿ êðèñòàëà (ç ïëàòîþ) Ã²Ñ epoxy ~ ç’ºäíàííÿ (íàïð. êðèñòàëà ç ïëàòîþ) inner-lead ~ óñòàíîâêà äëÿ ïðèºäíàííÿ åïîêñèäíèì êëåºì âíóòð³øí³õ ê³íö³â âèâîä³â (âèâ³äíî¿ ðàìêè) eutectic ~ ç’ºäíàííÿ (íàïð. êðèñòàëà ç äî êîíòàêòíèõ ìàéäàí÷èê³â êðèñòàëà ïëàòîþ) åâòåêòè÷íèì ïàÿííÿì
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bon microprocessor-controlled ~ óñòàíîâêà òåðìîêîìïðåñ³éíî¿ çâàðêè ç ì³êðîïðîöåñîðíèì óïðàâë³ííÿì nonflame spot ~ óñòàíîâêà òî÷êîâîãî ïàÿííÿ áåç ïîëóì’ÿ (íàïð. ñòðóìåíåì ãàðÿ÷îãî ãàçó) outer-lead ~ óñòàíîâêà äëÿ ïðèºäíàííÿ çîâí³øí³õ ê³íö³â âèâîä³â (âèâ³äíî¿ ðàìêè) äî øòûðüêàì êîðïóñè pulsed-heat ~ óñòàíîâêà òåðìî³ìïóëüñíî¿ çâàðêè spot ~ óñòàíîâêà òî÷êîâîãî ïàÿííÿ; óñòàíîâêà òî÷êîâî¿ çâàðêè TAB ~ äèâ. tape-automated (bonding) bonder tape-automated (bonding) ~ àâòîìàòèçîâàíà óñòàíîâêà äëÿ ïðèºäíàííÿ êðèñòàë³â äî âèâîä³â íà ñòð³÷êîâîìó íîñ³¿ (ç âèâ³äíèìè ðàìêàìè) thermocompression ~ óñòàíîâêà òåðìîêîìïðåñ³éíî¿ çâàðêè thermosonic ~ óñòàíîâêà òåðìîóëüòðàçâóêîâî¿ çâàðêè ultrasonic ~ óñòàíîâêà óëüòðàçâóêîâî¿ çâàðêè wedge ~ óñòàíîâêà òåðìîêîìïðåñ³éíî¿ çâàðêè êëèíîïîä³áíèì ïóàíñîíîì wire ~ óñòàíîâêà äðîòÿíî¿ òåðìîêîìïðåñ³éíî¿ çâàðêè bonding òåðìîêîìïðåñ³éíà çâàðêà; òåðìîêîìïðåñ³ÿ; çâàðêà; ç’ºäíàííÿ, ïðèêð³ïëåííÿ (äèâ. ò-æ bond, weld, welding) aluminum ~ òåðìîêîìïðåñ³éíà çâàðêà àëþì³í³ºâîãî äðîòó automated tape-carrier ~ àâòîìàòèçîâàíå ïðèºäíàííÿ êðèñòàë³â äî âèâîä³â íà ñòð³÷êîâîìó íîñ³¿ (ç âèâ³äíèìè ðàìêàìè) back ~ ìîíòàæ ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà ball ~ òåðìîêîìïðåñ³éíà çâàðêà êóëüêîþ, êóëüêîâà òåðìîêîìïðåñ³ÿ batch ~ ãðóïîâà çâàðêà beam-lead ~ ïðèºäíàííÿ áàëêîâèõ âèâîä³â êðèñòàëà beam tape-automated ~ àâòîìàòèçîâàíå ïðèºäíàííÿ áàëî÷íèõ âèâîä³â íà ñòð³÷êîâîìó íîñ³¿ (ç âèâ³äíèìè ðàìêàìè) bird’s-beak ~ òåðìîêîìïðåñ³éíà çâàðêà ³íñòðóìåíòîì ó âèãëÿä³ «ïòàøèíîãî äçüîáà» blind ~ àâòîìàòè÷íà òåðìîêîìïðåñ³éíà çâàðêà
bumped tape-automated ~ àâòîìàòèçîâàíå ïðèºäíàííÿ êðèñòàë³â äî ñòîâï÷èêîâèõ âèâîä³â íà ñòð³÷êîâîìó íîñ³¿ (ç âèâ³äíèìè ðàìêàìè) cement ~ êëåéîâå ç’ºäíàííÿ (íàïð. êðèñòàëà ç ï³äêëàäêîþ) chip ~ ïðèºäíàííÿ [ïîñàäêà] êðèñòàëà chisel ~ òåðìîêîìïðåñ³éíà çâàðêà âíàõëåñòêó (â íàêëàäêó) compliant ~ òåðìîêîìïðåñ³éíà çâàðêà âèâîä³â íà ñòð³÷êîâîìó íîñ³¿ diffused [diffusion] ~ äèôóç³éíà çâàðêà electron-beam ~ åëåêòðîííî-ïðîìåíåâà çâàðêà energy-pulse ~ (êîíòàêòíà) ³ìïóëüñíà çâàðêà face (-down) ~ ìîíòàæ ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà field-assisted ~ ç’ºäíàííÿ (äâîõ íàï³âïðîâ³äíèêîâèõ ïëàñòèí ó âàêóóì³), ñòèìóëüîâàíå åëåêòðè÷íèì ïîëåì flip-chip ~ ìîíòàæ ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà flux-free [fluxless] ~ ïðèºäíàííÿ áåçôëþñîâèì ïàÿííÿì fusion ~ ïðèºäíàííÿ ìåòîäîì ñïëàâëåííÿ gang (-lead) ~ ãðóïîâå ïðèºäíàííÿ âèâîä³â gold ball ~ êóëüêîâà òåðìîêîìïðåñ³éíà çâàðêà çîëîòîãî äðîòó inboard ~ ìîíòàæ ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà interconnection ~ ïðèºäíàííÿ âèâîä³â laser ~ ëàçåðíà çâàðêà lead ~ ïðèºäíàííÿ âèâîä³â nail-head ~ êóëüêîâà òåðìîêîìïðåñ³éíà çâàðêà, êóëüêîâà òåðìîêîìïðåñ³ÿ spider ~ ïðèºäíàííÿ êðèñòàë³â äî ïàó÷êîâûì âèâîä³â íà ñòð³÷êîâîìó íîñ³¿ (ç âèâ³äíèìè ðàìêàìè) stitch ~ òåðìîêîìïðåñ³éíà çâàðêà «çøèâàííÿì», ñòåæêîâàÿ òåðìîêîìïðåñ³éíà çâàðêà TC ~ òåðìîêîìïðåñ³éíà çâàðêà, òåðìîêîìïðåñ³ÿ thermal-pulse ~ òåðìîèìïóëüñíàÿ çâàðêà thermocompression ~ òåðìîêîìïðåñ³éíà çâàðêà, òåðìîêîìïðåñ³ÿ thermosonic ~ òåðìîóëüòðàçâóêîâà çâàðêà wedge ~ òåðìîêîìïðåñ³éíà çâàðêà êëèíîïîä³áíèì ïóàíñîíîì
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bri wire ~ 1. ïðèºäíàííÿ äðîòÿíèõ âèâîä³â; äðîòÿíèé ìîíòàæ 2. äðîòÿíà òåðìîêîìïðåñ³éíà çâàðêà wobble ~ ðîëèêîâà òåðìîêîìïðåñ³éíà çâàðêà booth: laminar-flow ~ áîêñ [ñêàôàíäð] ç ëàì³íàðíèì ïîòîêîì (íàïð. î÷èùåíîãî ïîâ³òðÿ) boron á³ð,  boron-diffused ñôîðìîâàíèé äèôó糺þ áîðó borosilicate áîðîñèë³êàò lead ~ áîðîñèë³êàò ñâèíöþ (ä³åëåêòðèê äëÿ ïë³âêîâèõ êîíäåíñàòîð³â) Borsenic òåõíîëîã³ÿ «Áîðñåíèê» (òåõíîëîã³ÿ âèãîòîâëåííÿ ²Ñ ç âèêîðèñòàííÿì äèôó糿 äîì³øêè ç Â2Î3 ³ As2O3) bottle: source ~ ñóäèíà äæåðåëà (ïàðè) bottleneck in design «âóçüêå ì³ñöå» â ïðîåêò³ bottom äíî; íèæíÿ ñòîðîíà; íèæíÿ ïîâåðõíÿ boule (íàï³âïðîâ³äíèêîâèé) çëèòîê; áóëÿ boundar/y ìåæà; ïîâåðõíÿ ðîçä³ëó antiphase ~ ì³æôàçíà [àíòèôàçíà] ìåæà crystal ~ 1. ïîâåðõíÿ ðîçä³ëó êðèñòàëà 2. ì³æçåðíîâà ìåæà, ìåæà ì³æ çåðíàìè domain ~ äîìåííà ìåæà, äîìåííà ñò³íêà grain ~ ì³æçåðíîâà ìåæà, ìåæà ì³æ çåðíàìè small-angle ~ies ìåæ³ ï³ä ìàëèì êóòîì, ìàëîêóòîâ³ ìåæ³ twin ~ ìåæà äâ³éíèêóâàííÿ, äâ³éíèêîâà ìåæà twist grain ~ ì³æçåðíîâà ìåæà êðó÷åííÿ bowing ïðîãèíàííÿ (íàïð. ñò³íêè ïðîô³ëþ òðàâëåííÿ) bowl: “fish” ~ ñêëÿíà ì³ñòê³ñòü (ºìí³ñòü) äëÿ õ³ì³÷íî¿ îáðîáêè äåòàëåé vibratory ~ â³áðàö³éíèé áóíêåð (äëÿ ïîäà÷³ êîìïîíåíò³â) box áîêñ; ñêàôàíäð (íàïð. äëÿ çá³ðêè ²Ñ) controlled nitrogen ~ áîêñ ³ç çàõèñíîþ àòìîñôåðîþ àçîòó dry ~ áîêñ ç îñóøåíîþ ³ î÷èùåíîþ àòìîñôåðîþ dust-proof ~ ïèëåíåïðîíèêíèé áîêñ glove ~ ñêàôàíäð ç ðóêàâè÷êàìè quantum ~ êâàíòîâèé ÿùèê wafer shipping ~ òàðà äëÿ òðàíñïîðòóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí bracelet:
grounding ~ çàçåìëåíèé áðàñëåò (çàõèñò â³ä ñòàòè÷íî¿ åëåêòðèêè) branch: delayed ~ â³äñòðî÷åíèé óìîâíèé ïåðåõ³ä (â ñèñòåìàõ êîìàíä ïðîöåñîðíî¿ Á²Ñ) fanout ~es ã³ëêè åëåìåíò³â íàâàíòàæåíü ïî âèõîäó brazing ïàÿííÿ òóãîïëàâêèì ïðèïîºì (ç òåìïåðàòóðîþ ïëàâëåííÿ âèùå 500 Ñ) eutectic vibration ~ â³áðàö³éíå ïàÿííÿ åâòåêòè÷íèì ïðèïîºì breadboard ìàêåò | ìàêåòóâàòè master slice ~ ìàêåò ²Ñ íà îñíîâ³ áàçîâîãî ìàòðè÷íîãî êðèñòàëà silicon ~ êðåìí³ºâèé ìàêåòíèé êðèñòàë software ~ ìàêåò ïðîãðàìíîãî çàáåçïå÷åííÿ solderless ~ ïëàòà äëÿ áåçïàÿíîãî ìàêåòóâàííÿ (áåç ïàÿííÿ) breakage: slice ~ ðîçëàìóâàííÿ [ëàìàííÿ] íàï³âïðîâ³äíèêîâèõ ïëàñòèí breakdown ïðîá³é avalanche ~ ëàâèííèé ïðîá³é high-temperature ~ òåïëîâèé ïðîá³é oxide ~ ïðîá³é îêñèäíîãî øàðó; ïðîá³é îêñèäíî¿ ³çîëÿö³¿ (çàòâîðà ÌÎÍòðàíçèñòîðà) punch-through ~ ïðîêîë áàçè, ñòóëåííÿ tunnel ~ òóíåëüíèé ïðîá³é breaking 1. ðîçëàìóâàííÿ, ëàìàííÿ 2. ðîçìèêàííÿ; ðîçðèâ, îáðèâ (åëåêòðè÷íîãî ëàíöþãà (êîëà)) chocolate ~ ðîçëàìóâàííÿ [ëàìàííÿ] (ñêðàéáîâàíî¿ ïëàñòèíè) ïî ðèñêàõ àíàëîã³÷íî ïëèòö³ øîêîëàäó breakpoint òî÷êà ïåðåðèâàííÿ (ïðîãðàìè) assertion-driven ~ òî÷êà ïåðåðèâàííÿ, êåðîâàíà ëîã³÷íèì âèðàçîì data ~ ³íôîðìàö³éíà òî÷êà ïåðåðèâàííÿ (ïîâ’ÿçàíà ç äîñòóïîì äàíèõ â áàç³ äàíèõ ÑÀÏÐ) global ~ ãëîáàëüíà òî÷êà ïåðåðèâàííÿ postamble ~ êðàéîâà òî÷êà ïåðåðèâàííÿ preamble ~ ïî÷àòêîâà òî÷êà ïåðåðèâàííÿ programmable ~ ïðîãðàìîâàíà òî÷êà ïåðåðèâàííÿ bridge ïåðåìè÷êà; ì³ñòîê; øóíò, óòâîðþâàòè ïåðåìè÷êó; óòâîðþâàòè êàíàë (íàïð. ì³æ ç’ºäíàííÿìè); øóíòóâàòè
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cam air ~ ïîâ³òðÿí³ êàíàâêè (íà êðåìí³ºâ³é ï³äêëàäö³) bridging ~ óòâîðåííÿ (çàêîðî÷óþ÷èõ) ïåðåìè÷îê (ç ïðèïîþ) electrical ~ 1. óòâîðåííÿ ïåðåìè÷îê; óòâîðåííÿ êàíàë³â (íàïð. ì³æ ç’ºäíàííÿìè) 2. øóíòóâàííÿ bubble 1. öèë³íäðîâèé ìàãí³òíèé äîìåí, ÖÌÄ 2. ïðèñòð³é íà ÖÌÄ 3. ïóõèðåöü (íàïð. ðåçèñòíîãî øàðó) cylindrical magnetic ~ öèë³íäðîâèé ìàãí³òíèé äîìåí, ÖÌÄ light ~ ñâ³òëîâèé äîìåí (íàïð. â òîíêèõ ïë³âêàõ ZnS) magnetic ~ 1. öèë³íäðîâèé ìàãí³òíèé äîìåí, ÖÌÄ 2. ïðèñòð³é íà ÖÌÄ seed ~ çàðîäêîâèé ÖÌÄ single-chip ~ îäíîêðèñòàëüíèé ïðèñòð³é íà ÖÌÄ bubbler. vapor ~ (âàêóóìíèé) âèïàðíèê (ìåòàëåâèõ íàâ³øóâàíü) bucket: charge depletion ~ ïîòåíö³éíà ÿìà áåç íîñ³¿â çàðÿäó (â ÏÇÇ); ëîêàëüíèé îá’ºì, çá³äíåíèé íîñ³ÿìè çàðÿäó, çá³äíåíà ä³ëÿíêà (íàïð. â ÏÇÇ) bucket-brigade 1. ïðèëàä òèïó «ïîæåæíèé ëàíöþæîê» 2. «ïîæåæíèé ëàíöþæîê» (ñïîñ³á ôîðìóâàííÿ ë³í³éêè ÌÎÍòðàíçèñòîð³â ³ êîíäåíñàòîð³â) buffer 1. áóôåðíà ñõåìà; áóôåðíèé êàñêàä 2. áóôåð, áóôåðíèé ÇÏ 3. áóôåðíèé ðåã³ñòð bug: dead ~ êîðïóñ (íàïð. DIP-êîð-ïóñ), çìîíòîâàíèé âèâîäàìè âãîðó build-up ïîòîâùåííÿ, íàðîùóâàííÿ charge ~ íàêîïè÷åííÿ íîñ³¿â çàðÿäó emulsion ~ ïîòîâùåííÿ åìóëüñèâíîãî øàðó (íàïð. íà ôîòîøàáëîí³) photoresist edge ~ ïîòîâùåííÿ ôîòîðåçèñòà íà êðàÿõ êðåìí³ºâî¿ ïëàñòèíè bulk ï³äêëàäêà; îá’ºì (íàï³âïðîâ³äíèêà) bump ñòîâï÷èêîâèé âèâ³ä, êîíòàêòíèé ñòîâï÷èê evaporated ~ ñòîâï÷èêîâèé âèâ³ä, ñôîðìîâàíèé ìåòîäîì (òåðìîâàêóóìíîãî) íàïèëåííÿ external ~ çîâí³øí³é ñòîâï÷èêîâèé âèâ³ä (êîðïóñè)
flip-chip ~ ñòîâï÷èêîâèé âèâ³ä ïåðåâåðíåíîãî êðèñòàëà gang-bonding ~ ñòîâï÷èêîâèé âèâ³ä äëÿ ãðóïîâîãî ïàÿííÿ àáî çâàðêè plated ~ ñòîâï÷èêîâèé âèâ³ä, ñôîðìîâàíèé ìåòîäîì åëåêòðîë³òè÷íîãî îñàäæåííÿ solder ~ ñòîâï÷èêîâèé âèâ³ä ç ïðèïîþ sputtered gold ~ ñòîâï÷èêîâèé âèâ³ä ç ïîâåðõíåâèì øàðîì çîëîòà, íàíåñåíèì ìåòîäîì ðîçïèëþâàííÿ bumping âèãîòîâëåííÿ ñòîâï÷èêîâèõ âèâîä³â tape ~ âèãîòîâëåííÿ ñòîâï÷èêîâèõ âèâîä³â íà ñòð³÷êîâîìó íîñ³¿ wafer ~ âèãîòîâëåííÿ ñòîâï÷èêîâèõ âèâîä³â íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ burn-in 1. òåðìîòðåíóâàííÿ; òåðìîâèòðèìêà 2. â³äïàë; òåðìîîáðîáêà burn-off ïåðåïàë (ïåðåìè÷îê); âèïàëþâàííÿ (íàïð. çâ’ÿçóþ÷î¿ ðå÷îâèíè, ôîòîðåçèñòà) burn-out âèãîðÿííÿ; âèïàëþâàííÿ (íàïð. íàïîâíþâà÷à ïàñò) bus (åëåêòðè÷íà) øèíà address ~ àäðåñíà øèíà backplane ~ îá’ºäíóþ÷à øèíà data ~ ³íôîðìàö³éíà øèíà polysilicon ~ øèíà ç ïîë³êðèñòàë³÷íîãî êðåìí³þ stacking ~ ïàêåòóþ÷à øèíà wired-logic ~ øèíà ç «ìîíòàæíîþ» ëîã³êîþ (â ïðîöåñîðíèõ Á²Ñ) busbar (åëåêòðè÷íà) øèíà (äèâ. òæ bus) busket: washing ~ ïðîìèâàëüíà êîðçèíà (äëÿ äðóêàðñüêî¿ ïëàòè); ïðîìèâàëüíà êàñåòà (äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí) bypass ïåðåìè÷êà; øóíò | óòâîðþâàòè ïåðåìè÷êó; øóíòóâàòè
C cabinet: environment ~ êàìåðà äëÿ êë³ìàòè÷íèõ âèïðîáóâàíü calculation: DD [drift-diffusion] ~ ðîçðàõóíîê ïî äðåéôîâî-äèôóç³éí³é ìîäåë³ calculus: D- ~ D-îá÷èñëåííÿ, îá÷èñëåííÿ D-êóá³â (â çàäà÷àõ ãåíåðàö³¿ òåñò³â ²Ñ) camera:
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cap multiple-lens step-and-repeat ~ chip ~ áåçêîðïóñíèé êîíäåíñàòîð áàãàòîë³íçîâèé ôîòîïîâòîðþâà÷ coupling ~ 1. êîíäåíñàòîð çâ’ÿçêó 2. optical step-and-repeat ~ ôîòîïîâòîðþâà÷, ðîçä³ëþâàëüíèé êîíäåíñàòîð ôîòîøòàìï decoupling ~ ðîçâ’ÿçóþ÷èé êîíäåíñàòîð reduction ~ ðåäóêö³éíà ôîòîêàìåðà diffused(-junction)~ äèôóç³éíèé can (ìåòàëåâèé) êîðïóñ êîíäåíñàòîð transistor-outline ~ êîðïóñ òðàíçèñòîðíîãî fixed ~ êîíäåíñàòîð ïîñò³éíî¿ ºìíîñò³ òèïó, êîðïóñ òèïó ÒÎ floating ~ ïëàâàþ÷èé êîíäåíñàòîð (â cap êðèøêà (êîðïóñà); êîâïà÷îê åêâ³âàëåíòí³é ñõåì³) annealing ~ (çàõèñíå) ïîêðèòòÿ äëÿ â³äïàëó flying ~ íàâ³ñíèé êîíäåíñàòîð antireflection ~ àíòèâ³äáèâíå ïîêðèòòÿ groove ~ ù³ëèííèé êîíäåíñàòîð glazed-ñåramic ~ êðèøêà ç ãëàçóðîâàíî¿ (ñôîðìîâàíèé â êàíàâö³) êåðàì³êè IC ~ ³íòåãðàëüíèé êîíäåíñàòîð oxide ~ (çàõèñíå) îêñèäíå ïîêðèòòÿ (íà isolation-merged ~ êîíäåíñàòîð, êðèñòàë³) ôóíêö³îíàëüíî ñóì³ùåíèé ç ³çîëþþ÷îþ capabilit/y: îáëàñòþ bearer ~ ïðîïóñêíà ñïðîìîæí³ñòü junction ~ êîíäåíñàòîð íà îäíîíàïðàâëåíîãî êàíàëó (â ïðîöåñîðíèõ îáåðíåíîçì³ùåíîìó ïåðåõîä³ Â²Ñ) memory ~ çàïàì’ÿòîâóþ÷èé êîíäåíñàòîð; current(-handling) ~ äîïóñòèìå íàêîïè÷óâàëüíèé êîíäåíñàòîð íàâàíòàæåííÿ ïî ñòðóìó MOS ~ ÌÎÍ-êîíäåíñàòîð fan-out ~ íàâàíòàæóâàëüíà çäàòí³ñòü (ïî nitride ~ êîíäåíñàòîð ç ä³åëåêòðèêîì ç âèõîäó); êîåô³ö³ºíò ðîçãàëóæåííÿ ïî âèõîäó í³òðèäó êðåìí³þ functional ~ies ôóíêö³îíàëüí³ ìîæëèâîñò³ stacked ~ áàãàòîøàðîâèé êîíäåíñàòîð load-driving ~ íàâàíòàæóâàëüíà çäàòí³ñòü trench ~ ù³ëèííèé êîíäåíñàòîð logic ~ íàâàíòàæóâàëüíà çäàòí³ñòü ëîã³÷íî¿ (ñôîðìîâàíèé â êàíàâö³) ñõåìè; ôóíêö³îíàëüíà çäàòí³ñòü ëîã³÷íî¿ variable ~ êîíäåíñàòîð çì³ííî¿ ºìíîñò³ ñõåìè wafer ~ áåçêîðïóñíèé êîíäåíñàòîð output ~ íàâàíòàæóâàëüíà çäàòí³ñòü capacity 1. (åëåêòðè÷íà) ºìí³ñòü (äèâ. ò-æ photoresist imaging ~ ðîçä³ëüíà çäàòí³ñòü capacitance) 2. çäàòí³ñòü ôîòîðåçèñòà current-carrying ~ äîïóñòèìå repair ~ ðåìîíòîñïðîìîæí³ñòü; íàâàíòàæåííÿ ïî ñòðóìó ðåìîíòîïðèãîäí³ñòü gate ~ 1. ôóíêö³îíàëüíà çäàòí³ñòü ëîã³÷íîãî resolution ~ ðîçä³ëüíà çäàòí³ñòü, åëåìåíòó 2. ºìí³ñòü çàòâîðà ðîçøèðåííÿ microprocessor-kit ~ ñêëàä êîìïëåêòó speed ~ øâèäêîä³ÿ [íàáîðó] äëÿ ì³êðîïðîöåñîð³â technological ~ òåõíîëîã³÷íà ìîæëèâ³ñòü MOS ~ 1. ºìí³ñòü ÌÎÍ-ñòðóêòóðè 2. capacitance (åëåêòðè÷íà) ºìí³ñòü (äèâ. ò-æ ôóíêö³îíàëüíà çäàòí³ñòü ÌÎÍ-ñòðóêòóðè capacity) output ~ 1. íàâàíòàæóâàëüíà çäàòí³ñòü 2. barrier-layer ~ áàð’ºðíà ºìí³ñòü âèõ³äíà ºìí³ñòü charge ~ çàðÿäíà ºìí³ñòü placement ~ ïðîäóêòèâí³ñòü ìîíòàæó depletion(-layer) ~ áàð’ºðíà ºìí³ñòü power(-handling)~ äîïóñòèìà ïîòóæí³ñòü inversion ~ ºìí³ñòü ³íâåðñ³éíîãî øàðó resolving ~ ðîçä³ëüíà çäàòí³ñòü, ðîçøèðåííÿ node ~ âóçëîâà ºìí³ñòü wafer ~ 1. ê³ëüê³ñòü êðèñòàë³â íà node-node ~ ì³æâóçëîâà ºìí³ñòü íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ 2. ðîçì³ð stray ~ ïàðàçèòíà ºìí³ñòü ïàðò³¿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí, ÿêà transfer ~ ïðîõ³äíà ºìí³ñòü çàâàíòàæóºòüñÿ â óñòàíîâêó (íàïð. ó capacitor êîíäåíñàòîð âàêóóìíó êàìåðó) charge-storage ~ íàêîïè÷óâàëüíèé “capillaries” óñòàíîâêà êóëüêîâî¿ êîíäåíñàòîð; çàïàì’ÿòîâóþ÷èé êîíäåíñàòîð òåðìîêîìïðåñ³¿
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cat capillary: bonder ~ êàï³ëÿðíèé ïóàíñîí, êàï³ëÿð (â óñòàíîâö³ êóëüêîâî¿ òåðìîêîìïðåñ³¿) capping ìîíòàæ êðèøêè êîðïóñó, ãåðìåòèçàö³ÿ êîðïóñó êðèøêîþ post-implantation ~ íàíåñåííÿ çàõèñíîãî øàðó ï³ñëÿ ³îííî¿ ³ìïëàíòàö³¿ capsulation ãåðìåòèçàö³ÿ glass ~ ãåðìåòèçàö³ÿ ñêëîì capsule: quartz ~ êâàðöîâà àìïóëà (íàïð. äëÿ ïðîâåäåííÿ äèôó糿 äîì³øêè) capture çàõîïëåííÿ | çàõîïëþâàòè carrier ~ çàõîïëåííÿ íîñ³¿â çàðÿäó card ïëàòà; äðóêîâàíà ïëàòà (äèâ. ò-æ board) chip ~ 1. ïëàòà êðèñòàëà 2. ïëàí êðèñòàëà IC ~ ïëàòà äëÿ ìîíòàæó ²Ñ logic ~ ïëàòà ç ëîã³÷íèìè ²Ñ probe ~ çîíäîâà ïëàòà (áàãàòîçîíäîâî¿ âèïðîáóâàëüíî¿ óñòàíîâêè) carousel: component ~ êàðóñåëüíèé ëîòîê äëÿ êîìïîíåíò³â (â ìîíòàæíîìó ñòîë³) carrier 1. íîñ³é (çàðÿäó) 2. íîñ³é; óòðèìóâà÷ 3. êàñåòà 4. êðåìí³ºâà ï³äêëàäêà; êåðàì³÷íà ï³äêëàäêà; äðóêîâàíà ïëàòà bumped chip ~ êðèñòàëîíîñ³é ³ç ñòîâï÷èêîâèìè âèâîäàìè ceramic ~ 1. êåðàì³÷íèé êðèñòàëîíîñ³é 2. êåðàì³÷íà ï³äêëàäêà charge ~ íîñ³é çàðÿäó chip ~ êðèñòàëîíîñ³é, êðèñòàëîòðèìà÷ conductive ~ 1. åëåêòðîïðîâ³äíà êàñåòà 2. åëåêòðîïðîâ³äíèé íîñ³é (íàïð. ïë³âêîâèé íîñ³é) current ~ íîñ³é çàðÿäó diffusion (-step) ~ êàñåòà äëÿ îáðîáêè íàï³âïðîâ³äíèêîâèõ ïëàñòèí â äèôóç³éí³é ïå÷³ extrinsic ~ íåâëàñíèé íîñ³é çàðÿäó flip-chip ~ êðèñòàëîíîñ³é äëÿ ìîíòàæó ²Ñ ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà furnace (slice) ~ êàñåòà äëÿ îáðîáêè íàï³âïðîâ³äíèêîâèõ ïëàñòèí â ïå÷³ hybrid ~ áåçâèâ³äíèé êîðïóñ äëÿ Ã²Ñ inert ~ ³íåðòíèé ãàç-íîñ³é injected ~ ³íæåêòîâàíèé íîñ³é çàðÿäó intrinsic ~ âëàñíèé íîñ³é çàðÿäó leaded chip ~ êðèñòàëîíîñ³é ç âèâîäàìè leadless chip ~ áåçâèâ³äíèé êðèñòàëîíîñ³é
majority ~ îñíîâíèé íîñ³é çàðÿäó mask ~ 1. óòðèìóâà÷ ôîòîøàáëîíó 2. ìàñêîòðèìà÷, óòðèìóâà÷ ìàñêè microcircuit ~ 1. ïëàòà äëÿ Ã²Ñ 2. êðèñòàëîíîñ³é, êðèñòàëîòðèìà÷ minor [minority] ~ íåîñíîâíèé íîñ³é çàðÿäó multichip ~ 1. ïëàòà áàãàòîêðèñòàëüíî¿ ²Ñ 2. êðèñòàëîíîñ³é äëÿ äåê³ëüêîõ êðèñòàë³â multilayer chip ~ êðèñòàëîíîñ³é ç áàãàòîð³âíåâèìè ç’ºäíàííÿìè photogenerated charge ~ íîñ³é çàðÿäó, ùî ãåíåðóºòüñÿ ñâ³òëîì polyimide ~ ïîë³àì³äíèé (ñòð³÷êîâèé) íîñ³é post molded chip ~ êðèñòàëîíîñ³é (ç êðèñòàëîì), ùî ãåðìåòèçîâàíèé ï³ñëÿ ìîíòàæó íà ïëàò³ premolded chip ~ ïðåñîâàíèé êðèñòàëîíîñ³é ring ~ ê³ëüöåâèé óòðèìóâà÷ (íàï³âïðîâ³äíèêîâèõ ïëàñòèí) single-layer chip ~ êðèñòàëîíîñ³é ç îäíèì ð³âíåì ç’ºäíàíü substrate ~ óòðèìóâà÷ ï³äêëàäîê, ï³äêëàäêîòðèìà÷ (ó âàêóóìí³é êàìåð³) tape chip ~ ñòð³÷êîâèé íîñ³é êðèñòàë³â wafer ~ êàñåòà äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí case êîðïóñ | ìîíòîâóâàòè â êîðïóñ³ molded ~ ïðåñîâàíèé êîðïóñ; ïëàñòìàñîâèé êîðïóñ transit ~ òàðà äëÿ òðàíñïîðòóâàííÿ (íàïð. ²Ñ) cassette êàñåòà accept ~ ïðèéìàëüíà êàñåòà reject ~ êàñåòà äëÿ áðàêîâàíèõ íàï³âïðîâ³äíèêîâèõ ïëàñòèí send ~ ïîäàþ÷à êàñåòà rework ~ êàñåòà äëÿ ðåãåíåðàö³¿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí SMIF ~ êàñåòà äëÿ ñòàíäàðòíîãî ìåõàí³÷íîãî ³íòåðôåéñó wafer ~ êàñåòà äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí cathode: hollow ~ ïîðîæíèñòèé êàòîä multifacet ~ êàòîä ó ôîðì³ áàãàòîãðàííèêà (â ïëàçìîâîìó ðåàêòîð³) wafer cooled ~ âîäîîõîëîäæóâàíèé êàòîä (â ïëàçìîâîìó ðåàêòîð³) cathodoluminescence êàòîäîëþì³í³ñöåíö³ÿ
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cel cave: bat ~ çàòðóþâàííÿ êðåìí³þ ï³ä ä³îêñèäîì êðåìí³þ cavity: chip ~ ïîãëèáëåííÿ äëÿ êðèñòàëà (â îñíîâ³ êîðïóñó) mesa ~ ìåçà-êàíàâêà; ìåçà-çàãëèáëåííÿ CCD ïðèëàä ³ç çàðÿäîâèì çâ’ÿçêîì, ÏÇÇ barrier-type ~ ÏÇÇ áàð’ºðíîãî òèïó bulk-channel ~ ÏÇÇ ç îá’ºìíèì êàíàëîì buried-channel ~ ÏÇÇ ç ïðèõîâàíèì êàíàëîì deep-depletion ~ ÏÇÇ ç ãëèáîêîçá³äíåíèì øàðîì junction ~ ÏÇÇ íà ïîëüîâèõ òðàíçèñòîðàõ ç êåðóþ÷èì ð-n-ïåðåõîäîì overlapping-gate ~ ÏÇÇ ³ç çàòâîðàìè, ùî ïåðåêðèâàþòüñÿ parallel-transfer ~ ÏÇÇ ç ïàðàëåëüíèì ïåðåíåñåííÿì peristaltic ~ ïåðèñòàëüòè÷íèé ÏÇÇ polysilicon-gate ~ ÏÇÇ ç ïîë³êðåìí³ºâèìè çàòâîðàìè recirculatlng ~ ÏÇÇ ç ðåöèðêóëÿö³ºþ çàðÿäó self-aligned ~ ÏÇÇ ç ñàìîñóì³ùåíèìè îáëàñòÿìè short-gate ~ ÏÇÇ ç êîðîòêèìè çàòâîðàìè staggered-îõide ~ ÏÇÇ ç ñõ³ä÷àñòèì ïðîô³ëåì îêñèäó stepped-îõide ~ ÏÇÇ ç ñõ³ä÷àñòèì ïðîô³ëåì îêñèäó surface-channel ~ ÏÇÇ ç ïîâåðõíåâèì êàíàëîì two-phase ~ äâîôàçíèé ÏÇÇ cell 1. åëåìåíò; êîì³ðêà 2. êîì³ðêà Â²Ñ (ÿêà âêëþ÷ຠåëåêòðè÷í³ ³ ãåîìåòðè÷í³ ïàðàìåòðè); ôðàãìåíò Â²Ñ 3. ñòàíäàðòíå ì³ñöå (äëÿ ðåàë³çàö³¿ ôóíêö³îíàëüíîãî åëåìåíòó ïðè ïðîåêòóâàíí³) 4. åëåìåíò ïàì’ÿò³ basic ~ áàçîâà êîì³ðêà bipolar ~ á³ïîëÿðíà êîì³ðêà charge-coupled ~ åëåìåíò íà ÏÇÇ; êîì³ðêà ÏÇÇ charge-storage ~ åëåìåíò ïàì’ÿò³; çàïàì’ÿòîâóþ÷èé åëåìåíò CML memory ~ åëåìåíò ïàì’ÿò³ íà ïåðåìèêà÷àõ ñòðóìó coupled [coupling] ~ çâ’ÿçàíèé [ñïàðåíèé] åëåìåíò ïàì’ÿò³ ÇÓÏ (ñòàí ÿêî¿ ìîæå
çì³íþâàòèñÿ ïðè çàïèñ³ â ³íøèé êîì³ðêà óíàñë³äîê äåôåêòó ÇÓÏ òèïó “ç÷åïëåííÿ») cross ~s êîì³ðêè ì³æêàíàëüíèõ çâ’ÿçê³â effusion ~ åôóç³éíà êîì³ðêà IC memory ~ åëåìåíò íàï³âïðîâ³äíèêîâî¿ ïàì’ÿò³ interface ~ åëåìåíò ³íòåðôåéñíî¿ ²Ñ; êîì³ðêà ³íòåðôåéñíî¿ ²Ñ iterative master ~s áàçîâ³ êîì³ðêè, ùî ïîâòîðþþòüñÿ jumbo ~ âåëèêà êîì³ðêà logic ~ 1. ëîã³÷íèé åëåìåíò (äèâ. ò-æ gate) 2. ëîã³÷íà êîì³ðêà manufacturing ~ ãíó÷êèé âèðîáíè÷èé ìîäóëü, ÃÂÌ master ~ áàçîâà êîì³ðêà memory ~ åëåìåíò ïàì’ÿò³ monolithic ~ ìîíîë³òíèé åëåìåíò; êîì³ðêà íàï³âïðîâ³äíèêîâî¿ ²Ñ MOS memory ~ åëåìåíò ïàì’ÿò³ íà ÌÎÍòðàíçèñòîðàõ multigate ~ 1. åëåìåíò áàãàòîçàòâîðà 2. êîì³ðêà ç äåê³ëüêîõ ëîã³÷íèõ åëåìåíò³â one-device [one-T] ~ îäíîòðàíçèñòîðíà êîì³ðêà; îäíîòðàíçèñòîðíèé åëåìåíò polysilicon-load ~ åëåìåíò ç ïîë³êðåìí³ºâèìè ðåçèñòîðàìè íàâàíòàæåííÿ prediffused ~ êîì³ðêà áåç ñïîëó÷íî¿ ìåòàë³çàö³¿ (íàïð. â áàçîâîìó ìàòðè÷íîìó êðèñòàë³) standard ~ ñòàíäàðòíà (á³áë³îòå÷íà) êîì³ðêà; ñòàíäàðòíèé (á³áë³îòå÷íèé) åëåìåíò super ~ íàäâåëèêà êîì³ðêà taper isolated ~ åëåìåíò ç êîíóñíèìè ³çîëþþ÷èìè îêñèäíèìè îáëàñòÿìè uncommitted transistor ~ íåñêîìóòîâàíà òðàíçèñòîðíà êîì³ðêà (íàïð. â áàçîâîìó ìàòðè÷íîìó êðèñòàë³) unit ~ 1. îäèíè÷íèé åëåìåíò, îäèíè÷íà êîì³ðêà (íàïð. íà ôîòîøàáëîí³) 2. åëåìåíòàðíà êîì³ðêà (êðèñòàë³÷íèõ ãðàòîêîê) cement êëåé | ïðèêëåþâàòè; ñêëåþâàòè center 1. öåíòð 2. òî÷êîâèé äåôåêò acceptor ~ àêöåïòîðíèé öåíòð charge recombination ~ öåíòð ðåêîìá³íàö³¿ íîñ³¿â çàðÿäó deep ~ ãëèáîêèé äîì³øêîâèé öåíòð
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cha deep-level trapping ~ ãëèáîêèé öåíòð çàõîïëåííÿ defect ~ äîì³øêîâèé öåíòð donor ~ äîíîðíèé öåíòð generation ~ ãåíåðàö³éíèé öåíòð impurity ~ äîì³øêîâèé öåíòð killer ~ öåíòð ïðèäóøåííÿ (íàïð. ðåêîìá³íàö³¿) negatively charged ~ íåãàòèâíî çàðÿäæåíèé öåíòð (ðåêîìá³íàö³¿ íîñ³¿â) negative U- ~ ãëèáîêèé öåíòð ç íåãàòèâíîþ åíåð㳺þ Õàááàðäà neutral trapping ~ íåéòðàëüíèé öåíòð çàõîïëåííÿ nonradiative ~ öåíòð áåçâèïðîì³íþâàëüíî¿ ðåêîìá³íàö³¿ NU- ~ äèâ. negative U-center nucleation ~ öåíòð çàðîäêîóòâîðåííÿ, çàðîäîê positively charged ~ ïîçèòèâíî çàðÿäæåíèé öåíòð (ðåêîìá³íàö³¿ íîñ³¿â) radiative recombination ~ öåíòð âèïðîì³íþâàëüíî¿ ðåêîìá³íàö³¿ street ~ öåíòð ë³í³¿ ñêðàéáóâàííÿ trapping ~ öåíòð çàõîïëåííÿ, ïàñòêà centering: technological ~ òåõíîëîã³÷íå öåíòðóâàííÿ (íàçâà ìåòîäó îïòèì³çàö³¿ âèõîäó ãîäíèõ ѲÑ) centrifuge öåíòðèôóãà | öåíòðèôóãóâàòè centroid: charge ~ öåíòðî¿äà çàðÿäó ceramic êåðàì³êà | êåðàì³÷íèé ceramics êåðàì³êà aluminum(-oxide) ~ êåðàì³êà íà îñíîâ³ îêñèäó àëþì³í³þ, àëþìîîêñèäíà êåðàì³êà beryllium (-oxide) ~ êåðàì³êà íà îñíîâ³ îêñèäó áåðèë³ÿ, áåðè볺âà êåðàì³êà camber-free - êåðàì³÷íà ïëàòà ç âèñîêîþ ãóñòèíîþ glazed ~ ãëàçóðîâàíà êåðàì³êà metal ~ êåðìåò, ìåòàëîêåðàì³êà multilayer ~ áàãàòîøàðîâà êåðàì³êà piezoelectric ~ ï’åçîêåðàì³êà PZT ~ êåðàì³êà íà îñíîâ³ òèòàíàòó ³ öèðêîíàòó ñâèíöþ superconducting [superconductor] ~ íàäïðîâ³äíà êåðàì³êà Cerdip ô³ðì. ñêëîêåðàì³÷íèé ïëîñêèé êîðïóñ ç äâîðÿäíèì ðîçòàøóâàííÿì âèâîä³â,
ñêëîêåðàì³÷íèé ïëîñêèé DIÐ-êîðïóñ cermet êåðìåò, ìåòàëîêåðàì³êà base-metal ~ êåðìåò íà îñíîâ³ íåáëàãîðîäíèõ ìåòàë³â noble-metal ~ êåðìåò íà îñíîâ³ áëàãîðîäíèõ ìåòàë³â certification: process ~ àòåñòàö³ÿ òåõíîëîã³÷íîãî ïðîöåñó chaining: command ~ ñêð³ïëåííÿ êîìàíä (â êàíàëüíèõ ïðîãðàìàõ) chamber. coating ~ (âàêóóìíà) êàìåðà] äëÿ íàïèëåííÿ òîíêèõ ïë³âîê, íàïèëþâàëüíà êàìåðà CO 2 /LN 2 ~ êàìåðà äëÿ êë³ìàòè÷íèõ âèïðîáóâàíü ç âèêîðèñòàííÿì ð³äêîãî àçîòó ³ ñóõîãî ëüîäó deposition ~ (âàêóóìíà) êàìåðà äëÿ îñàäæåííÿ òîíêèõ ïë³âîê environment ~ êàìåðà äëÿ êë³ìàòè÷íèõ âèïðîáóâàíü evacuated growth ~ âàêóóìíà êàìåðà äëÿ âèðîùóâàííÿ ïë³âîê evaporation ~ (âàêóóìíà) êàìåðà äëÿ íàïèëåííÿ òîíêèõ ïë³âîê, íàïèëþâàëüíà êàìåðà high-low [humidity] ~ êàìåðà äëÿ êë³ìàòè÷íèõ âèïðîáóâàíü inserting ~ çàâàíòàæóâàëüíà êàìåðà internal ~ âíóòð³øí³é îá’ºì (íàïð. êîðïóñó) low-vacuum ~ íèçüêîâàêóóìíà êàìåðà plasma-etching ~ êàìåðà äëÿ ïëàçìîâîãî òðàâëåííÿ processing ~ êàìåðà äëÿ òåõíîëîã³÷íî¿ îáðîáêè reaction ~ ðåàêö³éíà êàìåðà sealed ~ ãåðìåòè÷íà êàìåðà sputtering ~ êàìåðà äëÿ ðîçïèëþâàííÿ supervacuum ~ íàäâèñîêîâàêóóìíà êàìåðà taking-out ~ ðîçâàíòàæóâàëüíà êàìåðà ultrahigh-vacuum ~ íàäâèñîêîâàêóóìíà êàìåðà work (piece) ~ ðîáî÷à êàìåðà change: compositional ~ çì³íà ñêëàäó phase ~ ôàçîâèé ïåðåõ³ä channel 1. (ñòðóìîïðîâ³äíèé) êàíàë 2. êàíàëüíà îáëàñòü, êàíàë 3. êàíàë (ãðóïà áëèçüêî ðîçòàøîâàíèõ ç’ºäíàíü â áàçîâîìó ìàòðè÷íîìó êðèñòàë³) 4. êàíàâêà 5. êàíàë
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cha çâ’ÿçêó bearer ~ îäíîíàïðàâëåíèé êàíàë çâ’ÿçêó buried ~ ïðèõîâàíèé êàíàë charge-tranfer ~ êàíàë äëÿ ïåðåíåñåííÿ íîñ³¿â çàðÿäó cleavage ~ ë³í³ÿ ðîçëàìóâàííÿ (íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) data ~ êàíàë ïåðåäà÷³ äàíèõ depletion ~ çá³äíåíèé êàíàë electron ~ êàíàë n-òèïó enchancement ~çáàãà÷åíèé êàíàë FET ~ êàíàë [êàíàëüíà îáëàñòü] ïîëüîâîãî òðàíçèñòîðà Gaussian-doped ~ êàíàë ç ãàóñ³âñüêèì ðîçïîä³ëîì ëåãóþ÷î¿ äîì³øêè implanted ~ ³îííî-³ìïëàíòîâàíèé êàíàë induced ~ ³íäóêîâàíèé êàíàë internal ~ âáóäîâàíèé êàíàë (ïîëüîâîãî òðàíçèñòîðà) inversion [inverted] ~ ³íâåðñ³éíèé êàíàë isolation ~ ³çîëþþ÷à êàíàâêà; ðîçä³ëþâàëüíà êàíàâêà metal ~ ìåòàë³çîâàíå ì³æç’ºäíàííÿ metallized ñåramic ~ ìåòàë³çîâàíà êàíàâêà â êåðàì³ö³ (íàïð. äëÿ êðèñòàëà) return ~ çâîðîòíèé êàíàë (â ì³êðîïðîöåñîðíèõ ²Ñ) scribe ~ ë³í³ÿ ñêðàéáóâàííÿ standard ~s ñòàíäàðòí³ êàíàëè (íàïð. äëÿ ç’ºäíàííÿ ëîã³÷íèõ åëåìåíò³â) surface ~ ïîâåðõíåâèé êàíàë channeling: ion ~ êàíàë³çàö³ÿ ³îí³â planar ~ ôîðìóâàííÿ ïðîâ³äíîãî êàíàëó â ïëîñê³é ïîâåðõí³ êðèñòàëà chan-stop îáìåæóâà÷ êàíàëó, êàíàëîîáìåæóâàëüíà îáëàñòü characteristic õàðàêòåðèñòèêà base ~ áàçîâà [âõ³äíà] õàðàêòåðèñòèêà (òðàíçèñòîðà) capacitor-voltage ~ âîëüò-ôàðàäíà õàðàêòåðèñòèêà collector ~ õàðàêòåðèñòèêà êîëåêòîðà [âèõ³äíà] (òðàíçèñòîðà) current-stable ~ õàðàêòåðèñòèêà S-òèïó current-voltage ~ âîëüò-àìïåðíà õàðàêòåðèñòèêà, ÂÀÕ emitter ~ åì³òåðíà [âõ³äíà] õàðàêòåðèñòèêà (òðàíçèñòîðà)
epi(taxial) -layer ~ õàðàêòåðèñòèêà åï³òàêñ³àëüíîãî øàðó forward ~ õàðàêòåðèñòèêà ïðè ïðÿìîìó çì³ùåíí³ frequency(-response)~ àìïë³òóäíî-÷àñòîòíà õàðàêòåðèñòèêà, À×Õ guaranteed ðårformance ~ íîì³íàëüíà ðîáî÷à õàðàêòåðèñòèêà interfacial ~ õàðàêòåðèñòèêà ïîâåðõí³ ðîçä³ëó load ~ 1. õàðàêòåðèñòèêà íàâàíòàæåííÿ 2. äèíàì³÷íà õàðàêòåðèñòèêà negative-resistance ~ õàðàêòåðèñòèêà ç íåãàòèâíèì îïîðîì nonsaturation current-voltage ~ âîëüòàìïåðíà õàðàêòåðèñòèêà áåç ä³ëÿíêè íàñè÷åííÿ N-type ~ õàðàêòåðèñòèêà N-òèïó performance ~ ðîáî÷à õàðàêòåðèñòèêà reverse ~ õàðàêòåðèñòèêà ïðè çâîðîòíîìó çì³ùåíí³ saturation ~ õàðàêòåðèñòèêà íà ä³ëÿíö³ íàñè÷åííÿ speed ~ øâèäêîä³ÿ static ~ ñòàòè÷íà õàðàêòåðèñòèêà steady-state ~ ñòàòè÷íà õàðàêòåðèñòèêà (ïðèëàäó) â ñòàí³ ð³âíîâàãè S-type ~ õàðàêòåðèñòèêà S-òèïà subthreshold ~ ï³äïîðîãîâà õàðàêòåðèñòèêà terminal ~s device çîâí³øí³ õàðàêòåðèñòèêè ïðèëàäó transfer ~ 1. ïåðåäàâàëüíà õàðàêòåðèñòèêà 2. ñòîêîçàòâîðíà õàðàêòåðèñòèêà (ïîëüîâîãî òðàíçèñòîðà) voltage-capacitance ~ âîëüò-ôàðàäíà õàðàêòåðèñòèêà voltage-current ~ âîëüò-àìïåðíà õàðàêòåðèñòèêà, ÂÀÕ voltage-stable ~ õàðàêòåðèñòèêà N-òèïà characterization: ellipsometric ~ åë³ïñîìåòðè÷íå âèì³ðþâàííÿ LSI ~ 1. âèì³ðþâàííÿ õàðàêòåðèñòèê Â²Ñ 2. õàðàêòåðèñòèêè Â²Ñ MOS-process ~ 1. âèçíà÷åííÿ ïàðàìåòð³â ÌÎÍ-òåõíîëî㳿 2. ïàðàìåòðè [õàðàêòåðèñòèêè] ÌÎÍ-òåõíîëî㳿 properties ~ 1. âèçíà÷åííÿ âëàñòèâîñòåé; âèçíà÷åííÿ õàðàêòåðèñòèê (íàïð.
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chi íàï³âïðîâ³äíèêà) 2. âëàñòèâîñò³ (íàïð. íàï³âïðîâ³äíèêà) charge 1. (åëåêòðè÷íèé) çàðÿä 2. çàâàíòàæåííÿ, çàâàíòàæóâàòè background ~ ôîíîâèé çàðÿä bound ~ çâ’ÿçàíèé çàðÿä bulk ~ îá’ºìíèé çàðÿä electron ~ çàðÿä, çàðÿä åëåêòðîíà electrostatic ~ åëåêòðîñòàòè÷íèé çàðÿä elementary ~ åëåìåíòàðíèé çàðÿä, çàðÿä åëåêòðîíà evaporation ~ íàâ³øóâàííÿ äëÿ (òåðìîâàêóóìíîãî) íàïèëåííÿ excess ~ íàäì³ðíèé çàðÿä immobile ~ íåðóõîìèé çàðÿä induced ~ íàâåäåíèé [³íäóêîâàíèé] çàðÿä point ~ òî÷êîâèé çàðÿä space ~ ïðîñòîðîâèé çàðÿä; îá’ºìíèé çàðÿä specific ~ ïèòîìèé çàðÿä static ~ åëåêòðîñòàòè÷íèé çàðÿä stored ~ íàêîïè÷åíèé çàðÿä trapped ~ çàõîïëåíèé çàðÿä volume ~ îá’ºìíèé çàðÿä; ïðîñòîðîâèé çàðÿä chart 1. ãðàô³ê; êðåñëåííÿ; ä³àãðàìà 2. ñõåìà flow ~ 1. ñõåìà òåõíîëîã³÷íîãî ïðîöåñó; òåõíîëîã³÷íà êàðòà 2. áëîê-ñõåìà layout ~ òîïîëîã³÷íå êðåñëåííÿ logic ~ ëîã³÷íà áëîê-ñõåìà process ~ ñõåìà òåõíîëîã³÷íîãî ïðîöåñó; òåõíîëîã³÷íà êàðòà chase ðàìêà (äëÿ òðàôàðåòó) chatter 1. ïèëêîïîä³áíèé êðàé çð³çó (íàïð. ïðè âèð³çóâàíí³ îðèã³íàëó ôîòîøàáëîíó) 2. òðåìò³ííÿ; â³áðàö³ÿ | òðåìò³òè; â³áðóâàòè check ïåðåâ³ðêà; êîíòðîëü | ïåðåâ³ðÿòè; êîíòðîëþâàòè built-in ~ âáóäîâàíèé êîíòðîëü dimension ~ êîíòðîëü [ïåðåâ³ðêà] ðîçì³ð³â electrical rule ~ ïåðåâ³ðêà ïðàâèëüíîñò³ ïîáóäîâè åëåêòðè÷íî¿ ñõåìè, âåðèô³êàö³ÿ íà åëåêòðè÷íîìó ð³âí³ etch ~ (â³çóàëüíèé) êîíòðîëü (ïðîöåñó) òðàâëåííÿ functional ~ ôóíêö³îíàëüíèé êîíòðîëü; ïåðåâ³ðêà ôóíêö³îíóâàííÿ nondestructive ~ íåðóéí³âíèé êîíòðîëü checkability êîíòðîëåïðèäàòí³ñòü checker 1. ïåðåâ³ðî÷íèé ïðèñòð³é; çàñ³á êîíòðîëþ 2. ïðîãðàìà ïåðåâ³ðêè; ïðîãðàìà
êîíòðîëþ connectivity ~ ïðîãðàìà êîíòðîëþ çâ’ÿçíîñò³ crystal ~ ïðèëàä äëÿ ïåðåâ³ðêè êðèñòàë³â design rule ~ ïðîãðàìà ïåðåâ³ðêè ïðîåêòíèõ íîðì electrical performance ~ ïðîãðàìà êîíòðîëþ åëåêòðè÷íèõ õàðàêòåðèñòèê Â²Ñ flatness ~ ïðèëàä äëÿ êîíòðîëþ ïëîùèííî¿ (íàïð. íàï³âïðîâ³äíèêîâèõ ïëàñòèí) layout ~ ïðîãðàìà êîíòðîëþ òîïîëî㳿 checking ïåðåâ³ðêà; êîíòðîëü (äèâ. ò-æ check) control state ~ ïåðåâ³ðêà ñòàíó óïðàâë³ííÿ design rule ~ ïåðåâ³ðêà (äîòðèìàííÿ) ïðîåêòíèõ íîðì marginal ~ ãðàíè÷í³ âèïðîáóâàííÿ rule ~ ïåðåâ³ðêà (äîòðèìàííÿ) ïðîåêòíèõ íîðì self-checking ~ ñõåìà âáóäîâàíîãî êîíòðîëþ, ùî ñàìîïåðåðåâ³ðÿºòüñÿ checkout 1. ïåðåâ³ðêà 2. â³äëàäêà; íàëàäêà automatic ~ àâòîìàòè÷íà ïåðåâ³ðêà operational ~ ôóíêö³îíàëüíà ïåðåâ³ðêà chemical õ³ì³÷íèé ðåàêòèâ electronic-grade ~ õ³ì³÷íèé ðåàêòèâ äëÿ åëåêòðîííî¿ ïðîìèñëîâîñò³ etching ~ òðàâíèê fine ~ õ³ì³÷íî ÷èñòèé ðåàêòèâ wet ~ ð³äêèé õ³ì³÷íèé ðåàêòèâ chemisorption õåì³ñîðáö³ÿ chemistry: dry ~ ñóõà õ³ì³÷íà îáðîáêà (íàïð. ãàçîâå òðàâëåííÿ) ion-beam induced surface ~ õ³ì³ÿ ðåàêö³é íà ïîâåðõí³, ùî ñòèìóëþþòüñÿ ³îííèì ïó÷êîì plasma etch ~ ïëàçìîõ³ì³÷íå òðàâëåííÿ selective laser-induced heterogeneous ~ ñåëåêòèâíà õ³ì³ÿ ãåòåðîãåííèõ ëàçåðíîñòèìóëþþ÷èõ ðåàêö³é surface ~ õ³ì³ÿ ïîâåðõí³ wet ~ ð³äèííà õ³ì³÷íà îáðîáêà chemotronics õåìîòðîí³êà chiller: cold trap ~ êð³îãåííà ïàñòêà (âàêóóìíî¿ ñèñòåìè) chip 1. êðèñòàë (íàïð. ²Ñ) 2. ³íòåãðàëüíà ñõåìà, ²Ñ; ì³êðîñõåìà (äèâ. ò-æ circuit, integration) 3. îáêîëþâàòè (íàïð. êðèñòàë) <> ~-on-tape êðèñòàë, çìîíòîâàíèé íà
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chi ñòð³÷êîâîìó íîñ³¿ array ~ 1. êðèñòàë ìàòðè÷íî¿ ²Ñ 2. ìàòðè÷íà ²Ñ 3. áàçîâèé ìàòðè÷íèé êðèñòàë, ÁÌÊ backbonded ~ 1. ïåðåâåðíåíèé êðèñòàë 2. ²Ñ, çìîíòîâàíà ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà balls-down ~ ïåðåâåðíåíèé êðèñòàë ç êóëüêîâèìè âèâîäàìè bare ~ 1. êðèñòàë áåç ãåðìåòèçóþ÷îãî ïîêðèòòÿ 2. áåçêîðïóñíà ²Ñ beam-lead(ed)~ 1. êðèñòàë ç áàëêîâèìè âèâîäàìè 2. ²Ñ ç áàëêîâèìè âèâîäàìè bubble-domain [bubble-memory] ~ 1. êðèñòàë ïàì’ÿò³ íà ÖÌÄ 2. ²Ñ ïàì’ÿò³ íà ÖÌÄ bumped ~ êðèñòàë ³ç ñòîâï÷èêîâèìè âèâîäàìè committed ~ 1. êðèñòàë ñïåö³àë³çîâàíî¿ ²Ñ 2. ñïåö³àë³çîâàíà ²Ñ component ~ áåçêîðïóñíèé êîìïîíåíò contiguous-disk (bubble) ~ ²Ñ ïàì’ÿò³ íà ÖÌÄ ó âèãëÿä³ äîòè÷íèõ äèñê³â custom (-built) ~ çàìîâëåíà ²Ñ customizable ~ áàçîâèé ìàòðè÷íèé êðèñòàë, ÁÌÊ dense ~ êðèñòàë ç ù³ëüíîþ óïàêîâêîþ discrete-device ~ áåçêîðïóñíèé äèñêðåòíèé êîìïîíåíò electronic ~ 1. êðèñòàë íà ²Ñ 2. ³íòåãðàëüíà ñõåìà, ²Ñ; ì³êðîñõåìà face-down ~ ïåðåâåðíåíèé êðèñòàë factory-programmable ~ êðèñòàë, ïðîãðàìîâàíèé êîðèñòóâà÷åì fast ~ øâèäêîä³éíà ²Ñ fault-free [fault-tolerant] ~ â³äìîâîñò³éêà ²Ñ flip ~ ïåðåâåðíåíèé êðèñòàë full-wafer ~ ²Ñ íà ö³ë³é íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ fuse-programmable ~ ²Ñ, ïðîãðàìîâàíà ïëàâêèìè ïåðåìè÷êàìè gate-array ~ áàçîâèé êðèñòàë òèïó ìàòðèö³ ëîã³÷íèõ åëåìåíò³â glue ~ çâ’ÿçóþ÷à ²Ñ heterogeneous ~ êðèñòàë, ùî ñêëàäàºòüñÿ ç äâîõ àáî á³ëüøå íàï³âïðîâ³äíèêîâèõ ìàòåð³àë³â highly-ðàñked ~ 1. êðèñòàë ç âèñîêîþ ãóñòèíîþ óïàêîâêè 2. ²Ñ ç âèñîêîþ ãóñòèíîþ óïàêîâêè
hybrid ~ 1. êðèñòàë äëÿ Ã²Ñ 2. ã³áðèäíà ²Ñ, Ã²Ñ hyper ~ ²Ñ ³ç ñòóïåíåì ³íòåãðàö³¿ âèùå íàäâèñîêîþ, óëüòðàâåëèêà ²Ñ, ÓÂ²Ñ IC ~ êðèñòàë ²Ñ individual circuit ~ êðèñòàë ²Ñ ç ìàëèì ñòóïåíåì ³íòåãðàö³¿ integrated-microcircuit ~ êðèñòàë ²Ñ mask-programmable ~ áàçîâèé ìàòðè÷íèé êðèñòàë ç ìàñêîâèì ïðîãðàìóâàííÿì master(-slice)~ áàçîâèé ìàòðè÷íèé êðèñòàë, ÁÌÊ master-slice logic ~ ëîã³÷íà ²Ñ íà îñíîâ³ áàçîâîãî ìàòðè÷íîãî êðèñòàëà memory ~ 1. êðèñòàë ïàì’ÿò³ 2. ²Ñ ïàì’ÿò³ micro ~ Â²Ñ ì³êðîïðîöåñîðà, ì³êðîïðîöåñîðíà Â²Ñ microcircuit ~ 1. êðèñòàë ²Ñ 2. ³íòåãðàëüíà ñõåìà, ²Ñ microprocessor ~ Â²Ñ ì³êðîïðîöåñîðà, ì³êðîïðîöåñîðíà Â²Ñ monolithic ~ 1. êðèñòàë ìîíîë³òíî¿ ²Ñ 2. ìîíîë³òíà ²Ñ multilead ~ 1. êðèñòàë áàãàòîâèâ³äíèé ²Ñ 2. áàãàòîâèâ³äíà ²Ñ naked ~ 1. êðèñòàë áåç ãåðìåòèçóþ÷îãî ïîêðèòòÿ 2. áåçêîðïóñíà ²Ñ nongold backed ~ ïåðåâåðíåíèé êðèñòàë, çìîíòîâàíèé çà äîïîìîãîþ êîìïîçèö³¿, ùî íå ì³ñòèòü çîëîòî opto ~ 1. êðèñòàë îïòîåëåêòðîííî¿ ²Ñ 2. îïòîåëåêòðîííà ²Ñ packaged ~ ²Ñ â êîðïóñ³ pedestal ~ êðèñòàë ³ç ñòîâï÷èêîâèìè âèâîäàìè peripheral ~ ïåðèôåð³éíà ²Ñ pipelined ~ êîíâåéºðíèé ì³êðîïðîöåñîð planar passivated ~ ïàñèâîâàíèé êðèñòàë, âèãîòîâëåíèé çà ïëàíàðíîþ òåõíîëî㳺þ Poly Use ~ áàçîâèé ìàòðè÷íèé êðèñòàë, ÁÌÊ process-development ~ òåñòîâèé êðèñòàë äëÿ ðîçðîáêè òåõíîëîã³÷íîãî ïðîöåñó process-validation ~ òåñòîâèé êðèñòàë äëÿ êîíòðîëþ òåõíîëîã³÷íîãî ïðîöåñó resistor ~ áåçêîðïóñíèé ðåçèñòîð semiconductor ~ 1. êðèñòàë íàï³âïðîâ³äíèêîâî¿ ²Ñ 2. íàï³âïðîâ³äíèêîâà ²Ñ
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cir SLS ~ ²Ñ íà íàäãðàòîêö³ ç íàïðóæåíèìè circuit ñõåìà; êîëî; êîíòóð (äèâ. ò-æ chip, øàðàìè integration) solder ~ êðèñòàë ç êîíòàêòíèìè active ~ ñõåìà íà àêòèâíèõ êîìïîíåíòàõ ìàéäàí÷èêàìè, ïîêðèòèé ïðèïîºì air-isolation integrated ~ ²Ñ ç ïîâ³òðÿíîþ super ~ ²Ñ ³ç ñòóïåíåì ³íòåãðàö³¿ âèùå ³çîëÿö³ºþ íàäâèñîêîþ, óëüòðàâåëèêà ²Ñ, ÓÂ²Ñ all-diffused ~ ²Ñ ç äèôóç³éíèìè îáëàñòÿìè support ~ ïåðèôåð³éíà ²Ñ aluminum-gate (MOS) ~ ÌÎÍ ²Ñ ç TAB ~ êðèñòàë íà ñòð³÷êîâîìó íîñ³¿ äëÿ àëþì³í³ºâèìè çàòâîðàìè àâòîìàòèçîâàíîãî ìîíòàæó amplifier integrated ~ ³íòåãðàëüíèé test ~ òåñòîâèé êðèñòàë ï³äñèëþâà÷, ²Ñ ï³äñèëþâà÷à thick-film ~ êðèñòàë äëÿ òîâñòîïë³âêîâèé analog integrated ~ àíàëîãîâà ²Ñ Ã²Ñ AND ~ ëîã³÷íà ñõåìà ² thin-film ~ êðèñòàë äëÿ òîíêîïë³âêîâèé Ã²Ñ AND-OR ~ ëîã³÷íà ñõåìà ²–ÀÁÎ tolerant ~ â³äìîâîñò³éêà ²Ñ application specific integrated ~ ultra ~ ²Ñ ³ç ñòóïåíåì ³íòåãðàö³¿ âèùå ñïåö³àë³çîâàíà ²Ñ íàäâèñîêîþ, óëüòðàâåëèêà ²Ñ, ÓÂ²Ñ array integrated ~ ìàòðè÷íà ²Ñ uncommitted ~ íåñêîìóòîâàíèé êðèñòàë asymmetric-chevron (bubble) ~ ñõåìà (íàïð. áàçîâèé ìàòðè÷íèé êðèñòàë) ïðîñóâàííÿ ÖÌÄ íà àñèìåòðè÷íèõ unpackaged ~ 1. êðèñòàë áåç øåâðîíàõ ãåðìåòèçóþ÷îãî ïîêðèòòÿ 2. áåçêîðïóñíà ²Ñ basic ~ ïðèíöèïîâà ñõåìà wire-bonded ~ êðèñòàë ç äðîòÿíèì beam-lead(ed) integrated ~ ²Ñ ç áàëêîâèìè ìîíòàæåì âèâîäàìè XR ~ áàçîâèé ìàòðè÷íèé êðèñòàë ô³ðìè bipolar ~ ²Ñ íà á³ïîëÿðíèõ òðàíçèñòîðàõ, «Åñüêàð» (ÑØÀ) á³ïîëÿðíà ²Ñ X-ray made ~ ²Ñ, âèãîòîâëåíà ³ç bipolar-FET integrated ~ ²Ñ íà á³ïîëÿðíèõ çàñòîñóâàííÿì ðåíòãåí³âñüêî¿ ë³òîãðàô³¿ ³ ïîëüîâèõ òðàíçèñòîðàõ III-V ~ ²Ñ íà îñíîâ³ íàï³âïðîâ³äíèêîâîãî breadboard ~ ìàêåò ñõåìè ç’ºäíàííÿ òèïó AIII BIV built-in self-checking monitoring ~ ñõåìà ç chip-carrier êðèñòàëîíîñ³é, êðèñòàëîòðèìà÷ âáóäîâàíèì êîíòðîëåì ³ ñàìîïåðåâ³ðêîþ (äèâ. ò-æ carrier) bulk-effect integrated ~ ²Ñ íà ïðèëàäàõ ç “chip-cuts” äåôåêòí³ êðèñòàëè (²Ñ) îá’ºìíèì åôåêòîì chip-on-board ïåðåâåðíåíèé êðèñòàë íà ïëàò³ catalogue integrated ~ ñòàíäàðòíà ²Ñ (íàçâà ìîíòàæó ìåòîäîì ïåðåâåðíåíîãî ceramic-encapsulated integrated ~ ²Ñ â êðèñòàëà) êåðàì³÷íîìó êîðïóñ³ “chipper”: charge-coupled (device) ~ ²Ñ íà ÏÇÇ single ~ îäíîêðèñòàëüíèé ì³êðîïðîöåñîð; charge-domain integrated ~ ²Ñ íà ïðèëàäàõ îäíîêðèñòàëüíà ì³êðîÅÎÌ ³ç çàðÿäíèìè äîìåíàìè chipping: charge pumping ~ ñõåìà ç ï³äêà÷êîþ çàðÿäó peripheral ~ îáêîëþâàííÿ êðà¿â (íàïð. charge-transfer (device) ~ ²Ñ íà ÏÏÇ êðèñòàëà) chip integrated ~ áåçêîðïóñíà ²Ñ chipstrate ï³äêëàäêà ç áàãàòîð³âíåâèìè CMOS ~ êîìïëåìåíòàðíà ÌÎÍ ²Ñ, ÊÌÎÍ ç’ºäíàííÿìè (äëÿ òÑ) ²Ñ chuck: commodity integrated ~ ²Ñ øèðîêîãî electrostatic wafer ~ åëåêòðîñòàòè÷íèé çàñòîñóâàííÿ óòðèìóâà÷ íàï³âïðîâ³äíèêîâèõ ïëàñòèí common-base ~ ñõåìà ³ç çàãàëüíîþ áàçîþ vacuum ~ âàêóóìíå ñõîïëåííÿ; âàêóóìíèé common-collector ~ ñõåìà ³ç çàãàëüíèì óòðèìóâà÷ êîëåêòîðîì circle: common-emitter ~ ñõåìà ³ç çàãàëüíèì Hamilton ~ êðóã Ãàì³ëüòîíà (â ïðîåêòóâàíí³ åì³òåðîì ²Ñ) compatible integrated ~ ñóì³ùåíà ²Ñ
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cir complementary integrated ~ ²Ñ íà êîìïëåìåíòàðíèõ òðàíçèñòîðàõ complex integrated ~ ²Ñ ç ñêëàäíîþ ôóíêö³ºþ control integrated ~ óïðàâëÿþ÷à ²Ñ crosspoint integrated ~ êîìóòàö³éíà ²Ñ, ²Ñ êîîðäèíàòíîãî ïåðåìèêà÷à current mirror integrated ~ ²Ñ ³ç ñòðóìîâèì äçåðêàëîì custom [customized] integrated ~ çàìîâëåíà ²Ñ custom-wired integrated ~ ²Ñ ³ç çàìîâëåíîþ ðîçâîäêîþ Darlington(-type)~ ñõåìà íà ïàð³ Äàðë³íãòîíà dead-on-arrival integrated ~ äåôåêòíà ²Ñ dedicated (-design) ~ ñïåö³àë³çîâàíà ²Ñ depletion-mode integrated ~ ²Ñ íà ïðèëàäàõ, ùî ïðàöþþòü â ðåæèì³ çá³äíåííÿ die integrated ~ áåçêîðïóñíà ²Ñ dielectrically-isolated integrated ~ ²Ñ ç ä³åëåêòðè÷íîþ ³çîëÿö³ºþ digital integrated ~ öèôðîâà ²Ñ digital sequential ~ öèôðîâà ïîñë³äîâí³ñíà ñõåìà diode-array integrated ~ ²Ñ ä³îäíî¿ ìàòðèö³ discrete-chip integrated ~ ã³áðèäíà ³íòåãðàëüíà ñõåìà, Ã²Ñ discrete-component ~ ñõåìà íà äèñêðåòíèõ êîìïîíåíòàõ discrete Fourier transform integrated ~ ²Ñ äèñêðåòíîãî ïåðåòâîðåííÿ Ôóðüå discrete integrated ~ ²Ñ ç ìàëèì ñòóïåíåì ³íòåãðàö³¿ distributed-element equivalent ~ åêâ³âàëåíòíà ñõåìà ç ðîçïîä³ëåíèìè ïàðàìåòðàìè domain-originated integrated ~ ²Ñ ç ãåíåðàö³ºþ ÖÌÄ dry-processed integrated ~ ²Ñ, âèãîòîâëåíà çà ñóõîþ òåõíîëî㳺þ (áåç ð³äêèõ ðåàêòèâ³â) dual in-line integrated ~ ²Ñ â DIP-êîðïóñ³ ECL ~ åì³òåðíî-çâ’ÿçàíà ëîã³÷íà ²Ñ, ²Ñ íà ÅÇË, ÅÇË ²Ñ EFL integrated ~ ëîã³÷íà ²Ñ íà åì³òåðíèõ ïîâòîðþâà÷àõ, ²Ñ íà ÅÏË, ÅÏË ²Ñ elevated-electrode integrated ~ ²Ñ ç âèñòóïàþ÷èìè åëåêòðîäàìè encapsulated integrated ~ 1. ãåðìåòèçîâàíà ²Ñ 2 ²Ñ â ïëàñòìàñîâîìó êîðïóñ³
enchancement-mode integrated ~ ²Ñ íà ïðèëàäàõ, ùî ïðàöþþòü â ðåæèì³ çáàãà÷åííÿ epitaxial integrated ~ ²Ñ, âèãîòîâëåíà ç âèêîðèñòàííÿì åï³òàêñ³àëüíî¿ òåõíîëî㳿 epitaxial passivated integrated ~ ²Ñ, âèãîòîâëåíà ïî ÝÏÈÊ-òåõíîëî㳿 equivalent ~ åêâ³âàëåíòíà ñõåìà face-down integrated ~ ²Ñ, çìîíòîâàíà ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà fanout-free ~ ñõåìà áåç ðîçãàëóæåíü fault-free [fault-tolerant] ~ â³äìîâîñò³éêà ñõåìà faulty ~ äåôåêòíà ñõåìà field-effect (transistor) integrated ~ ²Ñ íà ïîëüîâèõ òðàíçèñòîðàõ field-programmable logic integrated ~ ëîã³÷íà ²Ñ, ïðîãðàìîâàíà êîðèñòóâà÷åì film-mounted integrated ~ ²Ñ íà ñòð³÷êîâîìó íîñ³¿ fine-line [fine-pattern] integrated ~ ²Ñ ç åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â flat-pack integrated ~ ²Ñ â ïëîñêîìó êîðïóñ³ ç ïëåíàðíèìè âèâîäàìè flip-chip integrated ~ ²Ñ, çìîíòîâàíà ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà flip-flop ~ ñõåìà òðèãåðà; òðèãåð front-end ~ ñõåìà âõ³äíîãî êàñêàäó full-custom integrated ~ ïîâí³ñòþ çàìîâëåíà ²Ñ functional integrated ~ ôóíêö³îíàëüíà ²Ñ gang-bonding integrated ~ ²Ñ, çìîíòîâàíà ìåòîäîì ãðóïîâî¿ çâàðêè gate-equivalent ~ ñõåìà, åêâ³âàëåíòíà ëîã³÷íîìó åëåìåíòó (óìîâíà îäèíèöÿ âèì³ðþâàííÿ ñòóïåíÿ ôóíêö³îíàëüíî¿ ³íòåãðàö³¿ öèôðîâèõ Â²Ñ ³ ѲÑ) governor integrated ~ êåðóþ÷à ²Ñ guard-ring isolated integrated ~ ²Ñ ç ³çîëþþ÷èìè îõîðîííèìè ê³ëüöÿìè Gunn-effect integrated ~ ²Ñ íà ïðèëàäàõ Ãàííà heterointegrated ~ ²Ñ ç ãåòåðîïåðåõîäàìè high-density integrated ~ ²Ñ ç âèñîêîþ ãóñòèíîþ óïàêîâêè highly integrated ~ ²Ñ ç âèñîêèì ñòóïåíåì ³íòåãðàö³¿, âåëèêà ²Ñ, Â²Ñ high-ðårformance ~ âèñîêîÿê³ñíà ñõåìà high-speed integrated ~ øâèäêîä³éíà ²Ñ
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cir high-technology integrated ~ ²Ñ, âèãîòîâëåíà çà ïåðåäîâîþ òåõíîëî㳺þ high-threshold logic ~ ëîã³÷íà ñõåìà ç âèñîêîþ ïîðîãîâîþ íàïðóãîþ high-volume ~ âåëèêîñåð³éíà ²Ñ home-grown integrated ~ ²Ñ âëàñíî¿ ðîçðîáêè homointegrated ~ ²Ñ ç ãîìîïåðåõîäàìè hybrid ~ ã³áðèäíà ²Ñ, Ã²Ñ hybrid dielectric integrated ~ Ã²Ñ íà ä³åëåêòðè÷í³é ï³äêëàäö³ hybrid film [hybrid-type] ~ ã³áðèäíà ²Ñ, Ã²Ñ (äèâ. ò-æ hybrid) I2L ~ ëîã³÷íà ²Ñ ç ³íæåêö³éíèì æèâëåííÿì, ²Ñ íà È2Ë infra-red integrated ~ (îïòîåëåêòðîííà) ²Ñ, ÷óòëèâà äî ²×-âèïðîì³íþâàííÿ insulated-substrate integrated ~ ²Ñ íà ä³åëåêòðè÷í³é ï³äêëàäö³, ²Ñ ç ÊÍÄñòðóêòóðîþ integrated ~ ³íòåãðàëüíà ñõåìà, ²Ñ (äèâ. òæ chip, integration) interface ~ ³íòåðôåéñíà ñõåìà isoplanar-based integrated ~ÈÑ, âèãîòîâëåíà çà ³çîïëàíàðíîþ òåõíîëî㳺þ Josephson(-junction)~ ²Ñ íà ïðèëàäàõ ç ïåðåõîäàìè Äæîçåôñîíà ion-implanted integrated ~ ³îííî³ìïëàíòîâàíà ²Ñ junction isolated integrated ~ ²Ñ ç ³çîëÿö³ºþ ð–n-ïåðåõîäàìè known-good ~ ïîâí³ñòþ ïàðàìåòðèçîâàíà ñõåìà ladder(-like) ~ áàãàòîëàíêîâà ñõåìà ñõ³ä÷àñòîãî òèïó laminated integrated ~ áàãàòîøàðîâà ²Ñ large-scale integrated ~ ²Ñ ç âèñîêèì ñòóïåíåì ³íòåãðàö³¿, âåëèêà ²Ñ, Â²Ñ leading-edge integrated ~ ²Ñ, âèãîòîâëåíà çà ïðîãðåñèâíîþ òåõíîëî㳺þ; ²Ñ âèñîêîãî òåõí³÷íîãî ð³âíÿ linear integrated ~ ë³í³éíà ²Ñ LOCOS integrated ~ ô³ðì. ²Ñ ç òîâñòèì ëîêàëüíèì îêñèäíèì øàðîì ³ á³÷íîþ ä³åëåêòðè÷íîþ ³çîëÿö³ºþ logic integrated ~ ëîã³÷íà ²Ñ low-noise ~ ìàëîøóìëÿ÷à ñõåìà low-profile integrated ~ ²Ñ â ìàëîãàáàðèòíîìó êîðïóñ³
LSI ~ ²Ñ ç âèñîêèì ñòóïåíåì ³íòåãðàö³¿, âåëèêà ²Ñ, Â²Ñ lumped-element equivalent ~ åêâ³âàëåíòíà ñõåìà ³ç çîñåðåäæåíèìè ïàðàìåòðàìè made-to-order integrated ~ çàìîâëåíà ²Ñ master-slice integrated ~ ²Ñ íà îñíîâ³ áàçîâîãî ìàòðè÷íîãî êðèñòàëà matrix integrated ~ ìàòðè÷íà ²Ñ megascale integrated ~ ²Ñ ³ç ñòóïåíåì ³íòåãðàö³¿ 106 åëåìåíò³â íà êðèñòàë³ ³ âèùå MOSBIP integrated ~ ²Ñ, ÿêà ñóì³ùຠÌÎͳ á³ïîëÿðí³ òðàíçèñòîðè ç ïîòóæíèì âèõîäîì memory ~ ²Ñ ïàì’ÿò³ merchant integrated ~ êîìåðö³éíà ²Ñ merged integrated ~ ëîã³÷íà ²Ñ ç ³íæåêö³éíèì æèâëåííÿì, ²Ñ íà È2Ë microelectronic ~ ³íòåãðàëüíà ñõåìà, ²Ñ (äèâ. ò-æ integration) Micronor integrated ~ ô³ðì. ëîã³÷íà ²Ñ ñå𳿠«Ìàéêðîíîð» micron-scale integrated ~ ²Ñ ç åëåìåíòàìè ì³êðîííèõ ðîçì³ð³â microprocessor integrated ~ ²Ñ ì³êðîïðîöåñîðà, ì³êðîïðîöåñîðíà Â²Ñ molecular integrated ~ ìîëåêóëÿðíà ²Ñ monobrid ~ òÑ, ùî ñêëàäàºòüñÿ ç äåê³ëüêîõ êðèñòàë³â ²Ñ monolithic ~ ìîíîë³òíà ²Ñ; íàï³âïðîâ³äíèêîâà ²Ñ MOS(-transistor) ~ ²Ñ íà ÌÎÍòðàíçèñòîðàõ, ÌÎÍ ²Ñ MSI ~ ²Ñ ç ñåðåäí³ì ñòóïåíåì ³íòåãðàö³¿, ñåðåäíÿ ²Ñ, Ñ²Ñ multichip ~ áàãàòîêðèñòàëüíà ²Ñ multilayer [multilevel] integrated ~ áàãàòîð³âíåâà ²Ñ multiple-chip ~ áàãàòîêðèñòàëüíà ²Ñ naked integrated ~ áåçêîðïóñíà ²Ñ NAND ~ ëîã³÷íà ñõåìà ²–ÍÅ noise-immunity integrated ~ ïåðåøêîäîñò³éêà ²Ñ nonredundant integrated ~ ²Ñ áåç ðåçåðâóâàííÿ NOR ~ ëîã³÷íà ñõåìà ÈËÈ—ÍÅ off-the-shelf integrated ~ ñòàíäàðòíà ²Ñ one-chip integrated ~ îäíîêðèñòàëüíà ²Ñ one-mask integrated ~ ²Ñ ç îäíîìàñêîâèì ïðîãðàìóâàííÿì
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cir open-collector integrated ~ ²Ñ íà òðàíçèñòîðàõ ç â³äêðèòèì êîëåêòîðîì optical integrated ~ îïòè÷íà ²Ñ; îïòîåëåêòðîííà ²Ñ optoelectronic integrated ~ îïòîåëåêòðîííà ²Ñ OR ~ ëîã³÷íà ñõåìà ÀÁÎ oxide-isolated integrated ~ ²Ñ ç îêñèäíîþ ³çîëÿö³ºþ partially self-checking ~ ñõåìà âáóäîâàíîãî êîíòðîëþ äëÿ çàáåçïå÷åííÿ ÷àñòêîâî¿ ñàìîïåðåâ³ðêè photo-integrated ~ ôîòîïðèéîìíà ²Ñ, ²Ñ ç îïòè÷íèì âõîäîì (êîìá³íàö³ÿ ôîòîäåòåêòîð³â ³ ²Ñ â îäíîìó ïðîçîðîìó êîðïóñ³) photonic integrated ~ ôîòîííà ²Ñ planar integrated ~ ²Ñ, âèãîòîâëåíà çà ïëåíàðíîþ òåõíîëî㳺þ planar-mounted integrated ~ ²Ñ â ïëîñêîìó êîðïóñ³ ç ïëàíàðíèìè âèâîäàìè plastic (encapsulated) integrated ~ 1. ²Ñ, ùî ãåðìåòèçóºòüñÿ ïëàñòìàñîþ 2. ²Ñ â ïëàñòìàñîâîìó êîðïóñ³ p-n junction isolated integrated ~ ²Ñ ç ³çîëÿö³ºþ ð-n-ïåðåõîäàìè polymer thick-film ~ Ã²Ñ íà ïîë³ìåðíèõ òîâñòèõ ïë³âêàõ prediffused integrated ~ ²Ñ íà îñíîâ³ áàçîâîãî ìàòðè÷íîãî êðèñòàëà programmable integrated ~ ïðîãðàìîâàíà ²Ñ proprietary integrated ~ ²Ñ âëàñíî¿ ðîçðîáêè quick Fourier transform ~ ñõåìà øâèäêîãî ïåðåòâîðåííÿ Ôóðüå race-free ~ ñõåìà, â³ëüíà â³ä çìàãàíü ñèãíàë³â radiation-hardened integrated ~ ðàä³àö³éíîñò³éêà ²Ñ RÑ ~ ðåçèñòèâíî-ºìí³ñíå êîëî, RC-êîëî redundant integrated ~ ²Ñ ç ðåçåðâóâàííÿì refresh (ing) ~ ñõåìà ðåãåíåðàö³¿, ñõåìà â³äíîâëåííÿ sample-hold ~ ñõåìà âèá³ðêè ³ çáåð³ãàííÿ scaled integrated ~ ìàñøòàáîâàíà ²Ñ scan design ~ ñõåìà, ðîçðîáëåíà ïî îäíîìó ç ìåòîä³â ñòðóêòóðíîãî ïðîåêòóâàííÿ êîíòðîëåïðèäàòíèõ ïðèñòðî¿â schematic ~ ïðèíöèïîâà ñõåìà
Schottky TTL (integrated) ~ ÒÒË ²Ñ ç ä³îäàìè Øîòê³, ÒÒËØ ²Ñ screen-printed integrated ~ òîâñòîïë³âêîâà Ã²Ñ sealed-junction integrated ~ ²Ñ ç ïåðåõîäàìè, ùî ãåðìåòèçóþòüñÿ (â ²Ñ ç áàëêîâèìè âèâîäàìè) self-aligned integrated ~ ñàìîñóì³ùåíà ²Ñ, ²Ñ ç ñàìîñóì³ùåíèìè îáëàñòÿìè self-cased LSI ~ Â²Ñ ç ãåðìåòèçóþ÷èì çàõèñíèì ïîêðèòòÿì self-checking [self-testing] integrated ~ ²Ñ ç ñàìîïåðåâ³ðêîþ semiconductor ~ 1. íàï³âïðîâ³äíèêîâà ²Ñ 2. ñõåìà íà íàï³âïðîâ³äíèêîâèõ ïðèëàäàõ semicustom [semicustomized] integrated ~ íàï³âçàìîâëåíà ²Ñ S/H ~ äèâ. sample-hold circuit single(-chip)~ îäíîêðèñòàëüíà ²Ñ skimming-and-reset ~ ñõåìà ïðî÷èòóâàííÿ ñèãíàë³â ³ â³äíîâëåííÿ ïî÷àòêîâîãî ð³âíÿ slice ~ ñõåìà ñåêö³îíîâàíîãî ì³êðîïðîöåñîðà small-integration ~ ²Ñ ç ìàëèì ñòóïåíåì ³íòåãðàö³¿ smart-power integrated ~ ²Ñ âåëèêî¿ ïîòóæíîñò³ (çàçâè÷àé ç ä³åëåêòðè÷íîþ ³çîëÿö³ºþ ³ âèãîòîâëåíà çà êîìá³íîâàíîþ òåõíîëî㳺þ) SOI integrated ~ ²Ñ íà ñòðóêòóð³ òèïó «êðåìí³é íà ä³åëåêòðèóêó», ²Ñ íà ÊÍÄñòðóêòóð³ solid(-state) integrated ~ òâåðäîò³ëüíà ñõåìà; íàï³âïðîâ³äíèêîâà ²Ñ SOS integrated ~ ²Ñ íà ñòðóêòóð³ òèïó «êðåìí³é íà ñàïô³ð³», ²Ñ íà ÊÍÑ-ñòðóêòóð³ stacked ~ áàãàòîð³âíåâà ²Ñ standard ñåll-based semicustom integrated ~ íàï³âçàìîâëåíà ²Ñ ç àðõ³òåêòóðîþ íà îñíîâ³ ñòàíäàðòíèõ êîì³ðîê Strassen algorithm LSI ~ ²Ñ, ðåàë³çîâóþ÷à àëãîðèòì Ñòðàññåíà (äëÿ ïåðåìíîæóâàííÿ âåëèêèõ ÷èñåë) stripline integrated ~ ñìóæêîâà ²Ñ submicron integrated ~ ²Ñ ç ñóáì³êðîííèìè åëåìåíòàìè subnanosecond integrated ~ ²Ñ ç ñóáíàíîñåêóíäíîþ øâèäêî䳺þ superconducting [superconductor] integrated ~ íàäïðîâ³äíèêîâà ²Ñ
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clu surface-mounted integrated ~ ²Ñ äëÿ ïîâåðõíåâîãî ìîíòàæó test-manufactured integrated ~ äîñë³äíà ²Ñ thick-film (hybrid) integrated ~ òîâñòîïë³âêîâà Ã²Ñ thin-film (hybrid) integrated ~ òîíêîïë³âêîâà Ã²Ñ three-diffusion integrated òðüîõäèôóç³éíà ²Ñ three-dimensional integrated ~ òðèâèì³ðíà ²Ñ transistor ~ òðàíçèñòîðíà ñõåìà, ñõåìà íà òðàíçèñòîðàõ tri-mask integrated ~ ²Ñ, âèãîòîâëåíà ç âèêîðèñòàííÿì òðüîõ ôîòîøàáëîí³â UHSI ~ óëüòðàøâèäêîä³þ÷à ²Ñ uncommitted integrated ~ íåñêîìóòîâàíà ²Ñ unipolar integrated ~ ²Ñ íà ïîëüîâèõ òðàíçèñòîðàõ user specified integrated ~ ²C, ïðîãðàìîâàíà êîðèñòóâà÷åì vacuum integrated ~ (åëåêòðî) âàêóóìíà ²Ñ VHSI ~ íàäøâèäêîä³þ÷à [íàäøâèäê³ñíà] ²Ñ, ÍÑ²Ñ VLSI ~ íàäâåëèêà ²Ñ, ÍÂ²Ñ wafer-scale integrated ~ ²Ñ íà ö³ë³é íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ wired OR ~ ëîã³÷íà ñõåìà «ìîíòàæíå ÀÁλ 3D integrated ~ òðèâèì³ðíà ²Ñ circuitry ñõåìè (äèâ. ò-æ chip, circuit, integration) chip-temperature-sensing ~ òåðìî÷óòëèâ³ ³íòåãðàëüí³ ñõåìè ECL ~ ëîã³÷í³ ñõåìè ç åì³òåðíèìè çâ’ÿçêàìè, åì³òåðíî-çâ’ÿçàíà ëîã³êà; ÝÑËñõåìè hardware ~ àïàðàòíà ëîã³êà level-shifting ~ ñõåìè çì³ùåííÿ (ëîã³÷íîãî) ð³âíÿ clamp: Schottky ~ ô³êñóþ÷èé [äåìïôóþ÷èé] ä³îä Øîòê³ class: placement ~ êëàñ ïðèëàä³â (íàïð. êîìïîíåíòè ñõåìè), çãðóïîâàí³ ïî áëèçüêîñò³ ô³çè÷íèõ õàðàêòåðèñòèê classification: automatic ~ àâòîìàòè÷íå ñîðòóâàííÿ dust ~ ðîçïîä³ë ÷àñòèíîê ïèëó (â³äïîâ³äíî äî êëàñ³â ÷èñòèõ âèðîáíè÷èõ ïðèì³ùåíü)
classifier 1. êëàñèô³êàòîð (íàïð íàï³âïðîâ³äíèêîâèõ ïëàñòèí) 2. ñîðòóþ÷èé ïðèñòð³é, ñîðòóâàëüíèê cleaner óñòàíîâêà î÷èùåííÿ (íàïð. íàï³âïðîâ³äíèêîâèõ ïëàñòèí) aqueous ~ óñòàíîâêà î÷èùåííÿ ó âîäíèõ ðîç÷èíàõ; óñòàíîâêà â³äìèâàííÿ â äå³îí³çîâàí³é âîä³ PCB ~ óñòàíîâêà äëÿ î÷èùåííÿ äðóêîâàíî¿ ïëàòè vapor ~ óñòàíîâêà î÷èùåííÿ â ïàðàõ ðîç÷èííèê³â cleaning: glow-discharge ~ î÷èùåííÿ â òë³þ÷îìó ðîçðÿä³ heat ~ òåðì³÷íå î÷èùåííÿ ion-beam ~ ³îííå î÷èùåííÿ organic ~ î÷èùåííÿ â îðãàí³÷íèõ ðîç÷èííèêàõ plasma etch ~ î÷èùåííÿ ïëàçìîâèì òðàâëåííÿ solvent ~ î÷èùåííÿ â ðîç÷èííèêàõ sputter ~ î÷èùåííÿ ðîçïèëþâàííÿì ultrasonic ~ óëüòðàçâóêîâå î÷èùåííÿ ultraviolet/ozone ~ î÷èùåííÿ ñï³ëüíîþ 䳺þ óëüòðàô³îëåòîâîãî [ÓÔ-] âèïðîì³íþâàííÿ òà îçîíó cleanout: development ~ âèäàëåííÿ ôîòîðåçèñòó ï³ñëÿ ïðîÿâëåííÿ cleanup î÷èùåííÿ clearing îñâ³òëþâàííÿ; î÷èùåííÿ cleavage 1. ðîçëàìóâàííÿ, ëàìàííÿ (íàïð. íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) 2. ñïàéí³ñòü climb: dislocation ~ ïåðåì³ùåííÿ äèñëîêàö³é clock 1. ñèíõðîí³çóþ÷³ ³ìïóëüñè; òàêòîâ³ ³ìïóëüñè | ñèíõðîí³çóâàòè; òàêòóâàòè 2. ãåíåðàòîð ñèíõðîí³çóþ÷èõ ³ìïóëüñ³â; ãåíåðàòîð òàêòîâèõ ³ìïóëüñ³â clocking: two-phase ~ äâîôàçíå óïðàâë³ííÿ (â ÏÇÇ) clogging: capillary ~ çàñì³÷åííÿ êàï³ëÿðà (íàïð. â óñòàíîâö³ êóëüêîâî¿ òåðìîêîìïðåñ³¿) close-up çá³ëüøåíå çîáðàæåííÿ; ïåðåäí³é ïëàí closure: package ~ ãåðìåòèçàö³ÿ êîðïóñó cluster:
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cod defect ~ ñêóï÷åííÿ äåôåêò³â lamination ~ íàíåñåííÿ áàãàòîøàðîâèõ ion ~ ³îííèé çãóñòîê ïîêðèòò³â CMOS êîìïëåìåíòàðíà ÌÎÍ-ñòðóêòóðà, multilayer ~ áàãàòîøàðîâå ïîêðèòòÿ ÊÌÎÍ-ñòðóêòóðà oxidation ~ 1. îêñèäíà ïë³âêà;îêñèäíîå bulk ~ ÌÎÍ-ñòðóêòóðà íà ñóö³ëüí³é ïîêðèòòÿ 2. íàíåñåííÿ ïîêðèòòÿ ìåòîäîì (íàï³âïðîâ³äíèêîâ³é) ï³äêëàäö³ (áåç îêñèäóâàííÿ åï³òàêñ³àëüíîãî øàðó) passivaling [passivation] ~ ïàñèâóþ÷å junction-isolated ~ ÊÌÎÍ-ñòðóêòóðà ç ïîêðèòòÿ ³çîëþþ÷èìè ð-n-ïåðåõîäàìè photoresist ~ 1. øàð ôîòîðåçèñòó 2. latch-up immune ~ ÊÌÎÍ-ñòðóêòóðà áåç íàíåñåííÿ ôîòîðåçèñòó åôåêòó çàùèïóâàííÿ polyimide die ~ ïîë³àì³äíå ïîêðèòòÿ íà overlaid ~ ÊÌÎÍ-ñòðóêòóðà ç êðèñòàë³ áàãàòîøàðîâîþ ìåòàë³çàö³ºþ sandwich ~ òðèøàðîâå ïîêðèòòÿ oxde-isolated ~ ÊÌÎÍ-ñòðóêòóðà ç screened [silk-screened] ~ ïîêðèòòÿ, îêñèäíîþ ³çîëÿö³ºþ íàíåñåíå òðàôàðåòíèì äðóêîì stacked ~ áàãàòîð³âíåâà ÊÌÎÍ-ñòðóêòóðà solderablc ~ ïîêðèòòÿ, ÿêå çìî÷óºòüñÿ super ~ ñóïåðÊÌÎÍ-ñòðóêòóðà (ô³ðìîâà ïðèïîºì íàçâà ÊÌÎÍ Â²Ñ) spin-on ~ íàíåñåííÿ ïîêðèòòÿ coalescence çðîùåííÿ, êîàëåñöåíö³ÿ öåíòðèôóãóâàííÿì (çàðîäê³â) striation-free ~ ïîêðèòòÿ (ç ôîòîðåçèñòó) áåç coat ïîêðèòòÿ; øàð | íàíîñèòè ïîêðèòòÿ ñìóæîê ³ áîðîçåíîê coater óñòàíîâêà äëÿ íàíåñåííÿ ïîêðèòò³â vapor-îõidation [vapox] ~ ïë³âêà ä³îêñèäó cassette-to-cassette ~ óñòàíîâêà äëÿ êðåìí³þ, ñôîðìîâàíà îêñèäóâàííÿì â ïàðàõ íàíåñåííÿ ïîêðèòò³â ç êàñåòíèì âîäè çàâàíòàæåííÿì ³ âèâàíòàæåííÿì ï³äêëàäîê codomain çâ’ÿçàíà îáëàñòü (íà êðèñòàë³) photoresist ~ óñòàíîâêà äëÿ íàíåñåííÿ coefficient: ôîòîðåçèñòó dielectric ~ ä³åëåêòðè÷íà ïðîíèêí³ñòü solder ~ óñòàíîâêà äëÿ íàíåñåííÿ ïðèïîþ diffusion ~ êîåô³ö³ºíò äèôó糿 spin-on dopant ~ óñòàíîâêà äëÿ íàíåñåííÿ distribution ~ êîåô³ö³ºíò ðîçïîä³ëó ëåãóþ÷î¿ äîì³øêè íà ïîâåðõíþ Ettingshausen-Nernst ~ êîåô³ö³ºíò íàï³âïðîâ³äíèêà Íåðíñòà–Ýòòèíñãàóçåíà vacuum ~ âàêóóìíà óñòàíîâêà äëÿ expansion ~ òåìïåðàòóðíèé êîåô³ö³ºíò íàíåñåííÿ ïîêðèòò³â ðîçøèðåííÿ, ÒÊÐ coating 1. ïîêðèòòÿ; øàð 2. íàíåñåííÿ Hall ~ êîåô³ö³ºíò [ïîñò³éíà] Õîëëà ïîêðèòòÿ negative temperature ~ íåãàòèâíèé adhesive ~ êëåéêå ïîêðèòòÿ; øàð êëåþ òåìïåðàòóðíèé êîåô³ö³ºíò anodic ~ àíîäóâàííÿ Peltier ~ êîåô³ö³ºíò Ïåëüò’º blanket ~ ñóö³ëüíå ïîêðèòòÿ positive temperature ~ ïîçèòèâíèé composite ~ áàãàòîøàðîâå ïîêðèòòÿ; òåìïåðàòóðíèé êîåô³ö³ºíò êîìïîçèö³éíå ïîêðèòòÿ recombination ~ êîåô³ö³ºíò ðåêîìá³íàö³¿ conformal ~ êîíôîðìíå ïîêðèòòÿ Seeback ~ êîåô³ö³ºíò òåðìîÅÐÑ (ïîâòîðþþ÷å ðåëüºô ïîâåðõí³ ï³äêëàäêè) sticking ~ êîåô³ö³ºíò ïðèëèïàííÿ (äëÿ dip ~ íàíåñåííÿ ïîêðèòòÿ ìåòîäîì çàëèøêîâèõ ãàç³â) çàíóðåííÿ temperature capacitance ~ òåìïåðàòóðíèé epoxy ~ åïîêñèäíå ïîêðèòòÿ êîåô³ö³ºíò åìíîñò³, Òʪ evaporation ~ ïîêðèòòÿ, íàíåñåíå temperature frequency ~ òåìïåðàòóðíèé (òåðìîâàêóóìíèì) íàïèëåííÿì êîåô³ö³ºíò ÷àñòîòè, ÒÊ× fluidized-bed ~ íàíå ñåííÿ ïîêðèòòÿ temperature resistance ~ òåìïåðàòóðíèé ìåòîäîì ïñåâäîçð³äæåíîãî øàðó êîåô³ö³ºíò îïîðó, ÒÊÎ junction ~ çâ’ÿçóþ÷èé ï³äøàð
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com thermal expansion ~ òåìïåðàòóðíèé êîåô³ö³ºíò ðîçøèðåííÿ, ÒÊÐ Thomson ~ êîåô³ö³ºíò Òîìñîíà co-evaporation: thermal ~ òåðì³÷íå ñï³ââèïàðîâóâàííÿ, ñï³ëüíå âèïàðîâóâàííÿ “coffin” òàðà äëÿ òðàíñïîðòóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí; êàñåòà cofi ²Ñ êîäåêà ³ ô³ëüòðó íà îäíîìó êðèñòàë³ co-fire ñï³ëüíå âèïàëåííÿ (ï³äêëàäêè ³ ñõåìè) | ï³ääàâàòè ñï³ëüíîìó âèïàëåííþ (ï³äêëàäêó ³ ñõåìó) coil êîòóøêà ³íäóêòèâíîñò³ inductance ~ êîòóøêà ³íäóêòèâíîñò³ stripline ~ ñìóæêîâà êîòóøêà ³íäóêòèâíîñò³ co-implantation: P/Be ~ ñï³ëüíà ³ìïëàíòàö³ÿ ³îí³â ñâèíöþ ³ áåðèë³ÿ collapsing: dominance fault ~ ñêîðî÷åííÿ ñïèñêó íåñïðàâíîñòåé íà îñíîâ³ â³äíîøåííÿ äîì³íóâàííÿ equivalence fault ~ ñêîðî÷åííÿ ñïèñêó íåñïðàâíîñòåé íà îñíîâ³ â³äíîøåííÿ åêâ³âàëåíòíîñò³ fault ~ ñêîðî÷åííÿ äåôåêò³â collection modules íàá³ð ìîäóë³â collector êîëåêòîð, îáëàñòü êîëåêòîðà buried ~ êîëåêòîð ç ïðèõîâàíèì øàðîì diffusion ~ äèôóç³éíèé êîëåêòîð epitaxial ~ åï³òàêñ³àëüíèé êîëåêòîð, êîëåêòîð, ñôîðìîâàíèé â åï³òàêñ³àëüíîìó øàð³ Schottky(-barrier)~ êîëåêòîð ó âèãëÿä³ áàð’ºðó Øîòê³ collimation: ion ~ êîë³ìàö³ÿ ³îí³â collision: elastic ~ ïðóæíå ç³òêíåííÿ inelastic ~ íåïðóæíå ç³òêíåííÿ column: electron-optical ~ åëåêòðîííî-ïðîìåíåâà êîëîíà (óñòàíîâêè ë³òîãðàô³¿) combination: bipolar logic/complementary MOS ~ êîìá³íàö³ÿ [îá’ºäíàííÿ) á³ïîëÿðíèõ ëîã³÷íèõ ²Ñ ³ ÊÌÎÍ ²Ñ íà îäíîìó êðèñòàë³ contact ~ ñèñòåìà êîíòàêò³â combo ²Ñ êîäåêà ³ ô³ëüòðó íà îäíîìó êðèñòàë³ commission äîâåäåííÿ; â³äëàäêà
communication: both-way ~s äâîíàïðàâëåí³ çâ’ÿçêè peer-to-peer ~ çâ’ÿçîê ì³æ ìîäóëÿìè çà ïðèíöèïîì «ð³âíèé ç ð³âíèì» compactness: functional ~ ôóíêö³îíàëüíà ãóñòèíà compactor êîìïàêòîð, óù³ëüíþâà÷ (òîïîëîã³÷íèõ ñõåì) comparator êîìïàðàòîð IC ~ ²Ñ êîìïàðàòîðà mask (overlay) ~ îïòè÷íèé êîìïàðàòîð äëÿ ïåðåâ³ðêè ÿêîñò³ ³ ñóì³ùåííÿ ôîòîøàáëîí³â operational-amplifier ~ êîìïàðàòîð íà îïåðàö³éíîìó ï³äñèëþâà÷³ compatibility ñóì³ñí³ñòü equipment ~ àïàðàòóðíà ñóì³ñí³ñòü hardware ~ àïàðàòíà ñóì³ñí³ñòü pin ~ ñóì³ñí³ñòü (êîðïóñ³â) ïî êðîêó âèâîä³â process (ing) ~ òåõíîëîã³÷íà ñóì³ñí³ñòü compensation êîìïåíñàö³ÿ charge ~ êîìïåíñàö³ÿ çàðÿä³â doping ~ êîìïåíñàö³ÿ ëåãóþ÷îþ äîì³øêîþ temperature ~ òåìïåðàòóðíà êîìïåíñàö³ÿ compilation: hardware silicon ~ àïàðàòíà êðåìí³ºâà êîìï³ëÿö³ÿ (â êðåìí³ºâèõ êîìï³ëÿòîðàõ ²Ñ) compiler: behavioral ~ êîìï³ëÿòîð ïîâåä³íêîâîãî òèïó block ~ áëîêîâèé êîìï³ëÿòîð cell ~ ìîäóëüíèé êîìï³ëÿòîð chip ~ êîìï³ëÿòîð, ùî ïðîåêòóº íà ïëàñòèí³ circuit ~ êîìï³ëÿòîð ñõåìè diagnostic ~ ä³àãíîñòè÷íèé êîìï³ëÿòîð (÷àñòèíà êðåìí³ºâîãî êîìï³ëÿòîðà, ùî çàáåçïå÷óº âèÿâëåííÿ ïîìèëîê íà ñòà䳿 êîìï³ëÿö³¿ ïðîåêòó ²Ñ) layout ~ êîìï³ëÿòîð òîïîëî㳿 silicon ~ êðåìí³ºâèé êîìï³ëÿòîð completeness test ïîâíîòà òåñòó (â³äñîòîê íåñïðàâíîñòåé, ùî ïåðåâ³ðÿþòüñÿ äàíèì òåñòîì) complex êîìïëåêñ; êîìïëåêñíå ç’ºäíàííÿ impurity-vacancy ~ êîìïëåêñ àòîì äîì³øêè–âàêàíñ³ÿ vacancy-îõygen ~ êîìïëåêñ àòîì êèñíþ– âàêàíñ³ÿ complexity ñòóï³íü ³íòåãðàö³¿; ñêëàäí³ñòü chip (level) ~ ñòóï³íü ³íòåãðàö³¿ êðèñòàëà circuit ~ ñòóï³íü ³íòåãðàö³¿ ²Ñ flip-flîð level ~ ñòóï³íü ³íòåãðàö³¿ â òðèãåðàõ
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com functional ~ ñòóï³íü ôóíêö³îíàëüíî¿ off-the-shelf ~ ñòàíäàðòíèé êîìïîíåíò; ñêëàäíîñò³, ôóíêö³îíàëüíà ñêëàäí³ñòü ñòàíäàðòíèé åëåìåíò gate ~ 1. ñòóï³íü ³íòåãðàö³¿ â åêâ³âàëåíòíèõ out-of-tolerance ~ êîìïîíåíò ç ëîã³÷íèõ åëåìåíòàõ 2. ñòóï³íü ³íòåãðàö³¿ ïàðàìåòðàìè, ùî âèõîäÿòü çà ìåæ³ äîïóñêó ëîã³÷íîãî åëåìåíòó packaged ~ êîìïîíåíò â êîðïóñ³ logic ~ ñòóï³íü ³íòåãðàö³¿ ëîã³÷íî¿ ²Ñ, passive ~ ïàñèâíèé êîìïîíåíò; ïàñèâíèé ëîã³÷íà ñêëàäí³ñòü åëåìåíò space ~ ïðîñòîðîâà ñêëàäí³ñòü (²Ñ) potted ~ êîìïîíåíò, ùî ãåðìåòèçóºòüñÿ wafer ~ ñêëàäí³ñòü íàï³âïðîâ³äíèêîâî¿ printed ~ äðóêîâàíèé êîìïîíåíò; ïëàñòèíè (âèçíà÷àºòüñÿ ê³ëüê³ñòþ êîìïîíåíò, âèãîòîâëåíèé ìåòîäîì ñôîðìîâàíèõ íà ïëàñòèí³ ñòðóêòóð ²Ñ) òðàôàðåòíîãî äðóêó wiring ~ ãóñòèíà ðîçì³ùåííÿ ç’ºäíàíü programmable system ~ áàçîâèé ìàòðè÷íèé component êîìïîíåíò; åëåìåíò (äèâ. ò-æ êðèñòàë, ÁÌÊ element) reeled ~s êîìïîíåíòè, âêëåºí³ â ñòð³÷êó; acoustic-surface-wave ~ êîìïîíåíò íà ÏÀ êîìïîíåíòè â ñòð³÷êîâîìó íîñ³¿ (íà êîòóøö³) added [add-on] ~ íàâ³ñíèé êîìïîíåíò screened ~ êîìïîíåíò, âèãîòîâëåíèé axial-lead ~ êîìïîíåíò ç îñüîâèìè ìåòîäîì òðàôàðåòíîãî äðóêó [àêñ³àëüíèìè] âèâîäàìè single ~ äèñêðåòíèé êîìïîíåíò bubble ~ åëåìåíò ïðèñòðîþ íà ÖÌÄ; solid-state ~ òâåðäîò³ëüíèé êîìïîíåíò; ïðèñòð³é íà ÖÌÄ íàï³âïðîâ³äíèêîâèé êîìïîíåíò bumped ~ êîìïîíåíò ³ç ñòîâï÷èêîâèìè system ~ 1. ñèñòåìíèé êîìïîíåíò 2. âèâîäàìè íàäâåëèêà ²Ñ, ÑÂ²Ñ chip ~ áåçêîðïóñíèé êîìïîíåíò tape (-mounted) ~s 1. êîìïîíåíòè, âêëåºí³ conventional ~ ñòàíäàðòíèé êîìïîíåíò â ñòð³÷êó (äëÿ àâòîìàòèçîâàíîãî ìîíòàæó íà dedicated ~ ñïåö³àë³çîâàíèé êîìïîíåíò äðóêîâàí³é ïëàò³) 2. ²Ñ íà ñòð³÷êîâîìó íîñ³¿ diffused ~ äèôóç³éíèé êîìïîíåíò uncased ~ áåçêîðïóñíèé êîìïîíåíò discrete ~ äèñêðåòíèé êîìïîíåíò uncommitted ~ íåñêîìóòîâàíèé êîìïîíåíò electrooptical ~ îïòîåëåêòðîííèé (íàïð. áàçîâèé ìàòðè÷íèé êðèñòàë) êîìïîíåíò componentry: encapsulated ~ êîìïîíåíò, ùî distributed ~ êîìïîíåíòè ç ðîçïîä³ëåíèìè ãåðìåòèçóºòüñÿ; êîìïîíåíò â ïëàñòìàñîâîìó ïàðàìåòðàìè êîðïóñ³ lumped ~ êîìïîíåíòè ³ç çîñåðåäæåíèìè external ~ íàâ³ñíèé êîìïîíåíò ïàðàìåòðàìè functional ~ ôóíêö³îíàëüíèé åëåìåíò composite 1. êîìïîçèö³éíèé ìàòåð³àë, hybrid ~ êîìïîíåíò Ã²Ñ êîìïîçèò 2. ñòðóêòóðà integrated (-circuit) ~ 1. êîìïîíåíò ²Ñ, planar ~ ïëàíàðíà áàãàòîøàðîâà ñòðóêòóðà ³íòåãðàëüíèé êîìïîíåíò 2. ³íòåãðàëüíà silicon-on-sapphire ~ ñòðóêòóðà òèïó ñõåìà, ²Ñ «êðåìí³é íà ñàïô³ð³», ÊÍÑ-ñòðóêòóðà known-good ~ ïîâí³ñòþ ïàðàìåòðèçîâàíèé êîìïîíåíò superconducting ~ íàäïðîâ³äíèé large-scale integration ~ 1. êîìïîíåíò Â²Ñ êîìïîçèö³éíèé ìàòåð³àë 2. âåëèêà ³íòåãðàëüíà ñõåìà, Â²Ñ composition 1. ñêëàä 2. êîìïîçèö³ÿ, ñòðóêòóðà; lateral etch ~ ãîðèçîíòàëüíà ñêëàäîâà ñóì³ø òðàâëåííÿ coating ~ 1. ñêëàä ïîêðèòòÿ 2. êîìïîçèö³ÿ molded ~ êîìïîíåíò â ïëàñòìàñîâîìó äëÿ íàíåñåííÿ ïîêðèòòÿ êîðïóñ³ deposition ~ 1. ñêëàä îñàäæåíîãî øàðó 2. monolithic ~ 1. ìîíîë³òíèé êîìïîíåíò 2. êîìïîçèö³ÿ äëÿ îñàäæåíîãî øàðó íàï³âïðîâ³äíèêîâà ²Ñ dielectric ~ 1. ñêëàä ä³åëåêòðèêà 2. naked ~ áåçêîðïóñíèé êîìïîíåíò ä³åëåêòðè÷íà êîìïîçèö³ÿ
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con gas-phase ~ 1. ñêëàä ãàçîâî¿ ôàçè 2. ãàçîïîä³áíà êîìïîçèö³ÿ multilayer ~ áàãàòîøàðîâà êîìïîçèö³ÿ plasma’s chemical ~ õ³ì³÷íèé ñêëàä ïëàçìè screenable ~ êîìïîçèö³ÿ [ñêëàä] ïàñòè äëÿ òðàôàðåòíîãî äðóêó thick-film dielectric ~ òîâñòîïë³âêîâà ä³åëåêòðè÷íà êîìïîçèö³ÿ compound 1. (õ³ì³÷íå) ç’ºäíàííÿ; ñóì³ø 2. êîìïàóíä 3. çì³øóâàòè; (õ³ì³÷íî) ñïîëó÷àòè binary semiconductor ~ á³íàðíèé íàï³âïðîâ³äíèê, á³íàðíå íàï³âïðîâ³äíèêîâå ç’ºäíàííÿ bismuth-based ~ íàäïðîâ³äíå ç’ºäíàííÿ íà îñíîâ³ â³ñìóòó bulk-molding ~ êîìïàóíä äëÿ îá’ºìíîãî ïðåñóâàííÿ element ~ õ³ì³÷íå ç’ºäíàííÿ íà îñíîâ³ ïðîñòèõ åëåìåíò³â, ïðîñòå õ³ì³÷íå ç’ºäíàííÿ heat-sink ~ êîìïàóíä äëÿ òåïëîâ³äâîä³â hygroscopic ~ ã³ãðîñêîï³÷íå ç’ºäíàííÿ lapping ~ øë³ôóâàëüíèé ñêëàä LSCO ~ íàäïðîâ³äíèêîâå ç’ºäíàííÿ òèïà La-Sr-Cu-O metal heterocyclic ~ ìåòàë-ãåòåðîöèêë³÷íå ç’ºäíàííÿ organometallic ~ ìåòàëîîðãàí³÷íà ñïîëóêà potting ~ ãåðìåòèçóþ÷èé êîìïàóíä pseudobinary ~ ïñåâäîïîäâ³éíå ç’ºäíàííÿ pseudoternary ~ ïñåâäîïîòð³éíå ç’ºäíàííÿ sealing ~ ãåðìåòèçóþ÷èé êîìïàóíä semiconducting [semiconductor] ~ íàï³âïðîâ³äíèêîâå ç’ºäíàííÿ thermosetting ~ òåðìîðåàêòèâíèé êîìïàóíä wide-gap ~ ì³êðîçîííå (íàï³âïðîâ³äíèêîâå) ç’ºäíàííÿ III-V ~ ç’ºäíàííÿ òèïó AIIIBV 1-2-3 ~ íàäïðîâ³äíèêîâå ç’ºäíàííÿ Y1Ba2Cu3O7-x compression: response ~ ñòèñíåííÿ òåñòó thermal ~ òåðìîêîìïðåñ³éíà çâàðêà, òåðìîêîìïðåñ³ÿ computer åëåêòðîííà îá÷èñëþâàëüíà ìàøèíà, ÅÎÌ all-applications digital ~ óí³âåðñàëüíà ÅÎÌ back-end ~ êðàéîâà ÅÎÌ (ðîáî÷à ñòàíö³ÿ äëÿ ïðîåêòóâàííÿ ²Ñ)
divide-and-conquer ~ ÅÎÌ, ùî çä³éñíþº îá÷èñëåííÿ ç ðîçä³ëåííÿì çàäà÷ íà ï³äçàäà÷³ front-end ~ ÅÎÌ ïîïåðåäíüî¿ îáðîáêè äàíèõ LSI ~ ÅÎÌ íà Â²Ñ mainframe ~ 1. óí³âåðñàëüíà ÅÎÌ 2. âåëèêà ÅÎÌ microelectronic ~ ÅÎÌ íà ²Ñ microprocessor-array ~ ÅÎÌ íà áàç³ ìàòðèö³ ì³êðîïðîöåñîð³â molecular ~ ìîëåêóëÿðíà ÅÎÌ multifunctional processing ~ áàãàòîôóíêö³îíàëüíà ÅÎÌ äëÿ îáðîáêè äàíèõ single-chip ~ îäíîêðèñòàëüíà ÅÎÌ computer-aided, computer-assisted âèêîíàíèé çà äîïîìîãîþ ÅÎÌ; àâòîìàòèçîâàíèé computer-controlled êåðîâàíèé ÅÎÌ concentration êîíöåíòðàö³ÿ acceptor ~ êîíöåíòðàö³ÿ àêöåïòîð³â background (impurity) ~ ôîíîâà êîíöåíòðàö³ÿ äîì³øêè (íàïð. â íàï³âïðîâ³äíèêîâ³é ïëàñòèí³) bulk impurity ~ îá’ºìíà êîíöåíòðàö³ÿ äîì³øêè defect ~ êîíöåíòðàö³ÿ äåôåêò³â; ãóñòèíà äåôåêò³â dopant [doping] ~ êîíöåíòðàö³ÿ (ëåãóþ÷î¿) äîì³øêè dosage ~ êîíöåíòðàö³ÿ ³ìïëàíòîâàíèõ ³îí³â äîì³øêè emitter impurity ~ êîíöåíòðàö³ÿ (ëåãóþ÷î¿) äîì³øêè åì³òåðíî¿ îáëàñò³ graded impurity ~ ïëàâíî çì³ííà êîíöåíòðàö³ÿ äîì³øêè intrinsic ~ âëàñíà êîíöåíòðàö³ÿ ionized-impurity ~ êîíöåíòðàö³ÿ ³îí³çîâàíèõ àòîì³â äîì³øêè per-unit-area ~ ïîâåðõíåâà êîíöåíòðàö³ÿ per-unit-volume ~ îá’ºìíà êîíöåíòðàö³ÿ recombination-ñånter ~ êîíöåíòðàö³ÿ öåíòð³â ðåêîìá³íàö³¿ surface-state ~ êîíöåíòðàö³ÿ ïîâåðõíåâèõ ñòàí³â vacancy ~ êîíöåíòðàö³ÿ âàêàíñ³é concept: building-block ~ áëîêîâèé ïðèíöèï êîíñòðóþâàííÿ design ~ ïðèíöèï ïðîåêòóâàííÿ
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con device ~ ìåõàí³çì ðîáîòè ïðèëàäó defect ~ åëåêòðîïðîâ³äí³ñòü, îáóìîâëåíà microprocessor ~ ïðèíöèï ðåàë³çàö³¿ äåôåêòàìè êðèñòàë³÷íèõ ãðàòîê öèôðîâèõ ñèñòåì íà ì³êðîïðîöåñîðàõ, electrical ~ åëåêòðîïðîâ³äí³ñòü, ì³êðîïðîöåñîðíà êîíöåïö³ÿ (åëåêòðè÷íà) ïðîâ³äí³ñòü whole-wafer ~ ïðèíöèï ðåàë³çàö³¿ Â²Ñ àáî electron ~ åëåêòðîííà åëåêòðîïðîâ³äí³ñòü, ÑÂ²Ñ íà ö³ë³é íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ åëåêòðîïðîâ³äí³ñòü n-òèïó condensation: extrinsic ~ äîì³øêîâà åëåêòðîïðîâ³äí³ñòü laser induced ~ ëàçåðíî-ñòèìóëþþ÷à forward-bias ~ ïðîâ³äí³ñòü ïðè ïðÿìîìó êîíäåíñàö³ÿ çì³ùåíí³ condition 1. ñòàí 2. ðl ðåæèì (ðîáîòè) heat ~ òåïëîïðîâ³äí³ñòü binary valued ~ óìîâà ç äâîìà ðåçóëüòàòàìè hole ~ ä³ðêîâà åëåêòðîïðîâ³äí³ñòü, boundary ~s ãðàíè÷í³ óìîâè åëåêòðîïðîâ³äí³ñòü ð-òèïó degeneracy [degenerate] ~ âèðîäæåíèé ñòàí hopping ~ ñòðèáêîâà åëåêòðîïðîâ³äí³ñòü diffusion ~ óìîâà ïðîâåäåííÿ ïðîöåñó impurity ~ äîì³øêîâà åëåêòðîïðîâ³äí³ñòü äèôó糿 intrinsic ~ âëàñíà åëåêòðîïðîâ³äí³ñòü Dirichlet boundary ~ ãðàíè÷íà óìîâà n-type ~ åëåêòðîííà åëåêòðîïðîâ³äí³ñòü, ijð³õëå åëåêòðîïðîâ³äí³ñòü n-òèïó forward-bias ~s ðåæèì ïðÿìîãî çì³ùåííÿ p-type ~ ä³ðêîâà åëåêòðîïðîâ³äí³ñòü, hazard ~ óìîâà ïîÿâè ðèçèêó çáîþ åëåêòðîïðîâ³äí³ñòü ð-òèïó limit ~s ãðàíè÷íèé ðåæèì thermal ~ òåïëîïðîâ³äí³ñòü off ~ ñòàí «âèìêíåíî»; çàêðèòèé ñòàí conductivity 1. ïèòîìà (åëåêòðè÷íà) on ~ ñòàí «âêëþ÷åíî»; â³äêðèòèé ñòàí ïðîâ³äí³ñòü 2. ïðîâ³äí³ñòü (äèâ. ò-æ operating [operation] ~s ðåæèì ðîáîòè conductance, conduction) race ~ óìîâà âèíèêíåííÿ çìàãàíü ñèãíàë³â electron ~ åëåêòðîííà ïèòîìà ïðîâ³äí³ñòü, reverse-bias ~s ðåæèì çâîðîòíîãî çì³ùåííÿ ïèòîìà ïðîâ³äí³ñòü n-òèïó self-explanatory ~ î÷åâèäíà óìîâà electron-beam induced - ïèòîìà sensitizing ~s óìîâè àêòèâ³çàö³¿ øëÿõó (íàïð. ïðîâ³äí³ñòü, ³íäóêîâàíà åëåêòðîííèì ïðîõîäæåííÿ ñèãíàëó) ïðîìåíåì worst-case ~s óìîâè ÿêíàéã³ðøîãî âèïàäêó extrinsic ~ äîì³øêîâà ïèòîìà ïðîâ³äí³ñòü conductance 1. (àêòèâíà) ïðîâ³äí³ñòü 2. hole ~ ä³ðêîâà ïèòîìà ïðîâ³äí³ñòü, ïèòîìà òåïëîïðîâ³äí³ñòü ïðîâ³äí³ñòü ð-òèïó backward ~ ïðîâ³äí³ñòü ó çâîðîòíîìó impurity ~ äîì³øêîâà ïèòîìà ïðîâ³äí³ñòü íàïðÿì³ intrinsic ~ âëàñíà ïèòîìà ïðîâ³äí³ñòü electrical ~ àêòèâíà ïðîâ³äí³ñòü; n-type ~ åëåêòðîííà ïèòîìà ïðîâ³äí³ñòü, åëåêòðîïðîâ³äí³ñòü, (åëåêòðè÷íà) ïèòîìà ïðîâ³äí³ñòü n-òèïó ïðîâ³äí³ñòü photo-induced ~ ôîòî³íäóêîâàíà forward-transfer ~ ïðîâ³äí³ñòü â ïðÿìîìó ïðîâ³äí³ñòü íàïðÿì³ p-type ~ ä³ðêîâà ïèòîìà ïðîâ³äí³ñòü, ïèòîìà junction ~ ïðîâ³äí³ñòü ð–n-ïåðåõîäó ïðîâ³äí³ñòü ð-òèïó mutual ~ êðóòèçíà small-signal ~ ïèòîìà ïðîâ³äí³ñòü â ðåæèì³ negative differential ~ íåãàòèâíà ìàëîãî ñèãíàëó äèôåðåíö³àëüíà ïðîâ³äí³ñòü thermal ~ ïèòîìà òåïëîïðîâ³äí³ñòü quantized ~ êâàíòîâàíà ïðîâ³äí³ñòü reverse ~ ïðîâ³äí³ñòü ó çâîðîòíîìó íàïðÿì³ conductor 1. ïðîâ³äíèê (ìàòåð³àë) 2. ïðîâ³äíèê; ì³æç’ºäíàííÿ 3. ïðîâ³äíà specific ~ ïèòîìà åëåêòðîïðîâ³äí³ñòü îáëàñòü (íà äðóêîâàí³é ïëàò³ àáî â êðèñòàë³ conduction åëåêòðîïðîâ³äí³ñòü, (åëåêòðè÷íà) íàï³âïðîâ³äíèêà) ïðîâ³äí³ñòü base-metal ~ ïðîâ³äíèê ç íåáëàãîðîäíèõ avalanche ~ åëåêòðîïðîâ³äí³ñòü â ðåæèì³ ìåòàë³â ëàâèííîãî ïðîáîþ bulk ~ îá’ºìíà åëåêòðîïðîâ³äí³ñòü
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con bonding ~ äðîòÿíèé âèâ³ä, ïðèºäíàíèé MOS aluminum-gate ~ ÌÎÍ-ñòðóêòóðà ç ìåòîäîì òåðìîêîìïðåñ³¿ àëþì³í³ºâèì çàòâîðîì cermet ~ ìåòàëîêåðàì³÷íèé [êåðìåòíèé] pinout ~ ôîðìà âèâîä³â êîðïóñó; ïðîâ³äíèê ðîçòàøóâàííÿ âèâîä³â êîðïóñó channel-stop ~ ïðîâ³äíèê — îáìåæóâà÷ sandwich-type ~ òðèøàðîâà ñòðóêòóðà, êàíàëó ñòðóêòóðà òèïó «ñàíäâ³÷» cryogenic ~ íàäïðîâ³äíèê schematic ~ 1. ïðèíöèïîâà ñõåìà 2. gold ~ ïðîâ³äíèê ç ïðîâ³äíî¿ ïàñòè íà îñíîâ³ ñòðóêòóðà ñõåìîòåõí³êè çîëîòà sensitized ~ àêòèâ³çóþ÷èé íàá³ð (íàïð. ohmic ~ îì³÷íèé [íåâèïðÿìëÿþ÷èé] ñèãíàë³â, òåñò³â) êîíòàêò strip-like ~ ñìóæêîâà êîíô³ãóðàö³ÿ polysilicon line ~ ïðîâ³äíèê ç transistor ~ 1. êîíô³ãóðàö³ÿ òðàíçèñòîðà 2. ïîë³êðèñòàë³÷íîãî êðåìí³þ òðàíçèñòîðíà ñòðóêòóðà screened ~ ì³æç’ºäíàííÿ, âèãîòîâëåíå transistor-outline ~ êîíô³ãóðàö³ÿ êîðïóñó ìåòîäîì òðàôàðåòíîãî äðóêó òðàíçèñòîðíîãî òèïó, êîíô³ãóðàö³ÿ êîðïóñó self-aligned ~s ñàìîñóì³ùåí³ ì³æç’ºäíàííÿ ÒÎ conduit: wire ~ êîíô³ãóðàö³ÿ òðàñè heavily-doped silicon ~ ïåðåìè÷êà ç confinement: ñèëüíîëåãîâàíîãî êðåìí³þ, íèçüêîîìíà current ~ îáìåæåííÿ ñòðóìó (ìåæàìè êðåìí³ºâà ïåðåìè÷êà ïåâíî¿ îáëàñò³.) interconnection ~ ñïîëó÷íà ïåðåìè÷êà congestion: configuration 1. êîíô³ãóðàö³ÿ; ãåîìåòð³ÿ 2. wiring ~ (ù³ëüíå) ðîçì³ùåííÿ ì³æç’ºäíàíü ñòðóêòóðà 3. êîìïîíóâàííÿ; òîïîëîã³ÿ; (íà êðåìí³ºâ³é ï³äêëàäö³) (ïðèíöèïîâà) ñõåìà connection 1. ç’ºäíàííÿ; âêëþ÷åííÿ 2. âèâ³ä; bipolar ~ 1. á³ïîëÿðíà ñòðóêòóðà 2. ç’ºäíàííÿ (äèâ. ò-æ interconnection) êîíô³ãóðàö³ÿ á³ïîëÿðíîãî òðàíçèñòîðà bypass ~ îáõ³äíå ç’ºäíàííÿ circuit ~ 1. êîíô³ãóðàö³ÿ ñõåìè 2. ñòðóêòóðà chip ~ ç’ºäíàííÿ êðèñòàëà (íàïð. ç ïëàòîþ ñõåìîòåõí³êè 3. òîïîëîã³ÿ ñõåìè òÑ) closed-geometry ~ 1. êîíô³ãóðàö³ÿ ³ç common-base ~ âêëþ÷åííÿ òðàíçèñòîðà ïî çàìêíóòîþ ãåîìåòð³ºþ 2. ñòðóêòóðà ³ç ñõåì³ ³ç çàãàëüíîþ áàçîþ çàìêíóòîþ ãåîìåòð³ºþ common-collector ~ âêëþ÷åííÿ òðàíçèñòîðà common-base ~ ñõåìà (âêëþ÷åííÿ ïî ñõåì³ ³ç çàãàëüíèì êîëåêòîðîì òðàíçèñòîðà) ³ç çàãàëüíîþ áàçîþ common-emitter ~ âêëþ÷åííÿ òðàíçèñòîðà common-collector ~ ñõåìà (âêëþ÷åííÿ ïî ñõåì³ ³ç çàãàëüíèì åì³òåðîì òðàíçèñòîðà) ³ç çàãàëüíèì êîëåêòîðîì crossover ~ ïåðåòèí ç’ºäíàíü common-emitter ~ ñõåìà (âêëþ÷åííÿ grounding ~ ç’ºäíàííÿ ³ç çåìëåþ, òðàíçèñòîðà) ³ç çàãàëüíèì åì³òåðîì çàçåìëåííÿ Darlington ~ ñõåìà ïàðè Äàðë³íãòîíà intercell ~ ç’ºäíàííÿ ì³æ îñåðåäêàìè diode ~ 1. êîíô³ãóðàö³ÿ ä³îäà 2. ä³îäíà interface ~ ì³æøàðîâå ç’ºäíàííÿ (â ñòðóêòóðà äðóêîâàí³é ïëàò³ àáî ²Ñ) epoxy ~ lead frame ôîðìà ìàéäàí÷èêà íà intracell ~ ì³æåëåìåíòíå ç’ºäíàííÿ â âèâ³äí³é ðàìö³ äëÿ ïðèêð³ïëåííÿ êðèñòàëà êîì³ðêàõ åïîêñèäíèì êëåºì overflow ~s ïëàâàþ÷³ ç’ºäíàííÿ flip-chip ~ ñòðóêòóðà, çìîíòîâàíà ìåòîäîì power ~ 1. ç’ºäíàííÿ äî äæåðåëà æèâëåííÿ ïåðåâåðíåíîãî êðèñòàëà 2. øèíà æèâëåííÿ high-resolution ~ ñòðóêòóðà ç âèñîêèì screen-on ~ ç’ºäíàííÿ, âèãîòîâëåíå ìåòîäîì äîçâîëîì òðàôàðåòíîãî äðóêó meander ~ çèãçàãîïîä³áíà êîíô³ãóðàö³ÿ self-registrated ~s ñàìîñóì³ùåí³ ç’ºäíàííÿ mesa ~ ìåçàñòðóêòóðà signal ~ 1. ñèãíàëüíå ç’ºäíàííÿ 2. ñèãíàëüíà øèíà
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con terminating [termination] ~ âèâ³ä; çîâí³øíº ç’ºäíàííÿ via ~ ì³æøàðîâå ç’ºäíàííÿ (â äðóêîâàí³é ïëàò³ ²Ñ) wire ~ äðîòÿíå ç’ºäíàííÿ; äðîòÿíèé âèâ³ä wired-logic ~ ìîíòàæíå ç’ºäíàííÿ wire-wrapped ~ ç’ºäíàííÿ íàêðóòêîþ connectivity: electrical ~ åëåêòðè÷íà ñóì³ñí³ñòü interlevel ~ ïåðåìè÷êà ì³æ øàðàìè ç’ºäíàíü (â áàãàòîð³âíåâèõ ç’ºäíàííÿõ) connector 1. (åëåêòðè÷íèé) ç’ºäíóâà÷ 2. âèâ³ä; ç’ºäíàííÿ (äèâ. ò-æ conductor, connection) constant êîíñòàíòà, ïîñò³éíà (âåëè÷èíà) absorption ~ êîåô³ö³ºíò ïîãëèíàííÿ Boltzmann’s ~ ïîñò³éíà Áîëüöìàíà collector-base time ~ ïîñò³éíà ÷àñó ëàíöþãà êîëåêòîðà dielectric ~ ä³åëåêòðè÷íà ïðîíèêí³ñòü electron diffusion ~ êîåô³ö³ºíò äèôó糿 åëåêòðîí³â grating ~ ïîñò³éíà äèôðàêö³éíèõ ãðàòîêîê Hall ~ êîåô³ö³ºíò [ïîñò³éíà] Õîëëà hole diffusion ~ êîåô³ö³ºíò äèôó糿 ä³ðîê lattice ~ ïîñò³éíà [ïàðàìåòð] êðèñòàë³÷íèõ ãðàòîê long-time ~ âåëèêà ïîñò³éíà ÷àñó Plank ~ ïîñò³éíà Ïëàíêà time ~ ïîñò³éíà ÷àñó constraints: placement ~s îáìåæåííÿ íà ðîçì³ùåííÿ (íàïð. åëåìåíò³â íà êðèñòàë³) timing ~s òèì÷àñîâ³ îáìåæåííÿ construction 1. êîíñòðóêö³ÿ; ñòðóêòóðà 2. êîíñòðóþâàííÿ; âèãîòîâëåííÿ block ~ áëîêîâà êîíñòðóêö³ÿ chip-and-wire ~ êîíñòðóêö³ÿ (òÑ) ç äðîòÿíèì ìîíòàæåì êðèñòàë³â lateral p-n-p ~ ñòðóêòóðà ãîðèçîíòàëüíîãî ð–n–ð-òðàíçèñòîðà modular ~ ìîäóëüíà êîíñòðóêö³ÿ monolithic ~ ìîíîë³òíà ñòðóêòóðà multichip ~ áàãàòîêðèñòàëüíà êîíñòðóêö³ÿ n-channel MOS ~ n-êàíàëüíà ÌÎÍñòðóêòóðà p-channel MOS ~ ð-êàíàëüíà ÌÎÍñòðóêòóðà thick-film ~ 1. òîâñòîïë³âêîâà ñòðóêòóðà 2. âèãîòîâëåííÿ çà òîâñòîïë³âêîâîþ òåõíîëî㳺þ
thin-film ~ 1. òîíêîïë³âêîâà ñòðóêòóðà 2. âèãîòîâëåííÿ çà òîâñòîïë³âêîâîþ òåõíîëî㳺þ vertical p-n-p ~ ñòðóêòóðà âåðòèêàëüíîãî pn-p -òðàíçèñòîðà consumption: power ~ ñïîæèâàíà ïîòóæí³ñòü contact 1. êîíòàêò | êîíòàêòóâàòè 2. åëåêòðîä; âèâ³ä (äèâ. ò-æ electrode) alloyed ~ ñïëàâíèé [âïëàâíèé] êîíòàêò base ~ 1. áàçîâèé êîíòàêò 2. áàçîâèé åëåêòðîä, åëåêòðîä áàçè beam-lead ~ áàëêîâèé âèâ³ä bifurcated ~ ðîçäâîºíèé êîíòàêò blocking ~ çàìèêàþ÷èé êîíòàêò bonded ~ çâàðíèé êîíòàêò bump ~ ñòîâï÷èêîâèé âèâ³ä, êîíòàêòíèé ñòîâï÷èê buried ~ ïðèõîâàíèé [ïîãëèáëåíèé] êîíòàêò crimp ~ êîíòàêò áåç ñïàþ edge-board ~ êîíòàêòíà îáëàñòü, ïðèçíà÷åíà äëÿ âñòàíîâëåííÿ ðîç’ºìó (íà äðóêîâàí³é ïëàò³) excimer-laser mixed ~ êîíòàêò, ñôîðìîâàíèé ïåðåì³ùåííÿì çà äîïîìîãîþ âèïðîì³íþâàííÿ åêñèìåðíîãî ëàçåðà hard ~ ù³ëüíèé êîíòàêò (ïðè ôîòîë³òîãðàô³¿) injection ~ ³íæåêòóþ÷èé êîíòàêò ion-implanted ~ êîíòàêò, âèãîòîâëåíèé ìåòîäîì ³îííî¿ ³ìïëàíòàö³¿ low-resistance ~ íèçüêîîìíèé êîíòàêò metallization ~ 1. ìåòàë³çîâàíèé êîíòàêò 2. êîíòàêò äî ñïîëó÷íî¿ ìåòàë³çàö³¿ metal-semiconductor ~ ïåðåõ³ä ìåòàë — íàï³âïðîâ³äíèê MIS ~ êîíòàêò ç ÌÄÏ-ñòðóêòóðîþ nonohmic ~ íåîì³÷íèé [âèïðÿìëÿþ÷èé] êîíòàêò nonrectifying [ohmic] - îì³÷íèé [íåâèïðÿìëÿþ÷èé] êîíòàêò point ~ òî÷êîâèé êîíòàêò polysilicon-to-diffusion ~ êîíòàêò ì³æ ïîë³êðåìí³ºâèì øàðîì ³ äèôóç³éíîþ îáëàñòþ protruding ~ ñòîâï÷èêîâèé âèâ³ä, êîíòàêòíèé ñòîâï÷èê rectifying ~ íåîì³÷íèé [âèïðÿìëÿþ÷èé] êîíòàêò
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con resistance ~ îì³÷íèé [íåâèïðÿìëÿþ÷èé] lateral ~ êîíòðîëü ãîðèçîíòàëüíèõ ðîçì³ð³â êîíòàêò linewidth ~ êîíòðîëü ì³í³ìàëüíèõ ðîçì³ð³â Schottky(-barrier)~ êîíòàêò ç áàð’ºðîì åëåìåíò³â ²Ñ; âèì³ðþâàííÿ ì³í³ìàëüíèõ Øîòê³ ðîçì³ð³â åëåìåíò³â (øèðèíè ë³í³¿ àáî Schottky base ~ áàçîâèé êîíòàêò ó âèãëÿä³ ïðîì³æêó ì³æ ë³í³ÿìè) áàð’ºðó Øîòê³ link status ~ óïðàâë³ííÿ ñòàíîì êàíàëó soft ~ ì’ÿêèé êîíòàêò (ïðè ôîòîë³òîãðàô³¿) ïåðåäà÷³ äàíèõ soldered ~ ïàÿíèé êîíòàêò microprocessor ~ ì³êðîïðîöåñîðíå substrate ~ êîíòàêò äî ï³äêëàäêè óïðàâë³ííÿ, óïðàâë³ííÿ çà äîïîìîãîþ vacuum ~ âàêóóìíèé êîíòàêò (ïðè ì³êðîïðîöåñîðà ôîòîë³òîãðàô³¿) model reference adaptive ~ àäàïòèâíå welded ~ çâàðíèé êîíòàêò óïðàâë³ííÿ ïî åòàëîíí³é ìîäåë³ container: oscillation ~ óïðàâë³ííÿ ãåíåðàö³ºþ wafer-processing ~ òàðà äëÿ (òåõíîëîã³÷íî¿) ïàðàçèòíîãî ñèãíàëó îáðîáêè íàï³âïðîâ³äíèêîâèõ ïëàñòèí; particle ~ êîíòðîëü çàïîðîøåíî¿ êàñåòà äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí (âèðîáíè÷èõ ïðèì³ùåíü) contaminant çàáðóäíåííÿ, (íåáàæàíà) position (ing) ~ êîíòðîëü ïîçèö³îíóâàííÿ äîì³øêà profile ~ êîíòðîëü ïðîô³ëþ (íàïð. ðîçïîä³ëè contamination 1. çàáðóäíåííÿ, (íåáàæàíà) äîì³øêè) äîì³øêà 2. çàáðóäíåííÿ program analysis adaptable ~ àäàïòèâíå gross ~ ñèëüíå çàáðóäíåííÿ óïðàâë³ííÿ àíàë³çîì ïðîãðàì metal ~ ìåòàëåâà äîì³øêà reliability ~ êîíòðîëü íàä³éíîñò³ paniculate ~ (äð³áíî) äèñïåðñíå resistivity ~ âèì³ðþâàííÿ ïèòîìîãî îïîðó çàáðóäíåííÿ shutterable ~ êîíòðîëü äæåðåë çà contaminometer ïðèëàä äëÿ âèçíà÷åííÿ äîïîìîãîþ çàñë³íîê ³îííèõ çàáðóäíåíü stitching ~ óïðàâë³ííÿ ïðîöåñîì contour: òåðìîêîìïðåñ³éíî¿ çâàðêè «çøèâàííÿì» edge ~ êîíòóð [êîíòóð] êðà¿â (íàïð. system-level ~ óïðàâë³ííÿ íà ñèñòåìíîìó êðåìí³ºâî¿ ïëàñòèíè) ð³âí³ peripheral ~ ïåðèôåð³éíà îáëàñòü Z-axis ~ ðåãóëþâàííÿ ïî îñ³ Z, ðåãóëþâàííÿ contrast: ïî âåðòèêàëüí³é îñ³ resist ~ êîíòðàñòí³ñòü ðåçèñòó controllability êîíòðîëåïðèäàòí³ñòü; stroboscopic voltage ~ ñòðîáîñêîï³÷íèé êåðîâàí³ñòü ïîòåíö³éíèé êîíòðàñò combinational ~ êîìá³íàö³éíà voltage ~ ïîòåíö³éíèé êîíòðàñò êîíòðîëåïðèäàòí³ñòü; êîìá³íàö³éíà control 1. êîíòðîëü; ïåðåâ³ðêà | êîíòðîëþâàòè; êåðîâàí³ñòü ïåðåâ³ðÿòè 2. óïðàâë³ííÿ; ðåãóëþâàííÿ | sequential 0 ~ ~ ïîñë³äîâí³ñíà êåðîâàí³ñòü óïðàâëÿòè; ðåãóëþâàòè â «0» contamination ~ êîíòðîëü çà ð³âíåì sequential 1 ~ ïîñë³äîâí³ñíà êåðîâàí³ñòü â çàáðóäíåííÿ «1» data ~ óïðàâë³ííÿ äàíèìè controller êîíòðîëëåð data link ~ óïðàâë³ííÿ êàíàëîì ïåðåäà÷³ bus interface ~ êîíòðîëëåð ³íòåðôåéñó øèíè äàíèõ (â ïðîöåñîðíèõ ²Ñ) depth ~ êîíòðîëü ãëèáèíè (íàïð. ðîçïîä³ëè furnace ~ ðåãóëÿòîð ðîáîòè (äèôóç³éíî¿) äîì³øêè); âèì³ðþâàííÿ ãëèáèíè çàëÿãàííÿ ïå÷³ (íàïð. ð–n-ïåðåõîäó) graphic options ~ êîíòðîëëåð ç ãðàô³÷íèì dust ~ êîíòðîëü çàïîðîøåíî¿ (âèðîáíè÷èõ óñòàòêóâàííÿì ïðèì³ùåíü) hybrid microelectronic ~ Ã²Ñ êîíòðîëëåðà impurity ~ êîíòðîëü çà ðîçïîä³ëîì äîì³øêè memory ~ êîíòðîëëåð ïàì’ÿò³ (â íàï³âïðîâ³äíèêó)
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cra microprocessor ~ ì³êðîïðîöåñîðíèé êîíòðîëëåð microprogrammed ~ êîíòðîëëåð ç ì³êðîïðîãðàìíèì óïðàâë³ííÿì multiprotocol communications ~ çâ’ÿçêîâèé êîíòðîëëåð, ùî ïðàöþº ç äåê³ëüêîìà ïðîòîêîëàìè programmable ~ ïðîãðàìîâàíèé êîíòðîëëåð stage ~ êîíòðîëëåð êîîðäèíàòíîãî ñòîëó vacuum-deposition ~ êîíòðîëëåð äëÿ óïðàâë³ííÿ ïðîöåñîì âàêóóìíîãî îñàäæåííÿ conversion ïåðåòâîðåííÿ; ïåðåòâîðåííÿ conductivity-type ~ çì³íà [ïåðåòâîðåííÿ] òèïó ïèòîìî¿ ïðîâ³äíîñò³ ïðîâ³äíèêà converter ïåðåòâîðþâà÷ image ~ ôîðìóâà÷ â³äåîñèãíàë³â, ôîðìóâà÷ (ñèãíàë³â) çîáðàæåííÿ solid-state image ~ òâåðäîò³ëüíèé ôîðìóâà÷ â³äåîñèãíàë³â SO-to-DIP ~ ïåðåõ³äíèé ïðèñòð³é â³ä êîðïóñó òèïà SO äî êîðïóñó òèïà DIP conveyor: band [belt] ~ ñòð³÷êîâèé êîíâåéºð convolver êîíâîëüâåð mesa p-n diode-array àñoustic-surface-wave ~ êîíâîëüâåð, ìຠä³îäíó ìàòðèöþ ç ìåçàñòðóêòóðîþ ³ ë³í³þ çàòðèìêè íà ÏÀ cooker: pressure ~ òåðìîáàðîêàìåðà coolant õîëîäèëüíèé àãåíò, õîëîäîàãåíò cooler: metal-semiconductor thermoelectric ~ òåðìîåëåêòðè÷íèé îõîëîäæóâà÷ ³ç ñòðóêòóðîþ ìåòàë–íàï³âïðîâ³äíèê Peltier(-åffect)~ òåðìîåëåêòðè÷íèé îõîëîäæóâà÷ íà îñíîâ³ åôåêòó Ïåëüò’º cooling: convective ~ êîíâåêòèâíå îõîëîäæóâàííÿ forced ~ ïðèìóñîâå îõîëîäæóâàííÿ coordinatograph êîîðäèíàòîãðàô Coplamos ô³ðì. òåõíîëîã³ÿ «Êîïëàìîñ» (äëÿ âèãîòîâëåííÿ n-êàíàëüíèõ ÌÎÍ Â²Ñ) copy: photomask ~ êîï³ÿ åòàëîííîãî ôîòîøàáëîíó; ðîáî÷èé ôîòîøàáëîí working ~ ðîáî÷èé ôîòîøàáëîí coring óòâîðåííÿ ôàñåò³â, ôàñåòèðóâàííÿ (ïðè âèðîùóâàíí³, ìîíîêðèñòàë³÷íèõ
çëèòê³â) correction: forward error ~ ïðÿìå âèïðàâëåííÿ ïîìèëîê (áåç ïîâòîðíî¿ ïåðåäà÷³) mask-proximity ~ êîðåêö³ÿ [êîìïåíñàö³ÿ] åôåêòó áëèçüêîñò³ ó ôîòîë³òîãðàô³¿ (äëÿ ï³äâèùåííÿ ðîçä³ëüíî¿ çäàòíîñò³) correctness: ~ designed circuits ïðàâèëüí³ñòü ïðîåêòîâàíèõ ñõåì functional ~ ôóíêö³îíàëüíà êîðåêòí³ñòü counter: alpha-scintillation ~ ñöèíòèëÿö³éíèé ë³÷èëüíèê á-÷àñòèíîê block-àñknowledged ~ ë³÷èëüíèê ï³äòâåðäæåíèõ áëîê³â (ïðè ïðîåêòóâàíí³ ïðîöåñîðíèõ ²Ñ) block-completed ~ ë³÷èëüíèê çàâåðøåíèõ áëîê³â (â êðåìí³ºâèõ êîìï³ëÿòîðàõ ²Ñ) laser aerosol ~ ëàçåðíèé ë³÷èëüíèê àåðîçîëüíèõ ÷àñòèíîê counterdoped ëåãîâàíèé äî ïðîòèëåæíîãî òèïó åëåêòðîïðîâ³äíîñò³, ëåãîâàíèé êîìïåíñóþ÷îþ äîì³øêîþ counterdoping êîìïåíñóþ÷å ëåãóâàííÿ counterpart: bipolar ~ á³ïîëÿðíèé àíàëîã, á³ïîëÿðíà ²Ñ ç àíàëîã³÷íîþ ôóíêö³ºþ (íàïð. ïî â³äíîøåííþ äî ïåâíî¿ ÌÎÍ ²Ñ) discrete ~ àíàëîã íà äèñêðåòíèõ êîìïîíåíòàõ (íàïð. ïî â³äíîøåííþ äî ÌÎÍ ²Ñ) coupler: optical [opto] ~ îïòðîí, îïòîïàðà coupling: infused emitter ~ ñòðóêòóðíà åì³òåðíèé çâ’ÿçîê interline ~ çâ’ÿçîê ºìíîñò³ ì³æ ç’ºäíàííÿìè opto [photo] ~ îïòðîíèé çâ’ÿçîê cover ïîêðèòòÿ | íàíîñèòè ïîêðèòòÿ coverage 1. ïîêðèòòÿ 2 ïîêðèòòÿ (ïðè ãåíåðàö³¿ òåñòó) eutectic ~ ïîêðèòòÿ ç åâòåêòè÷íîãî ñïëàâó fault ~ ïîêðèòòÿ íåñïðàâíîñòåé metal(lization) -step ~ ïë³âêà ìåòàëó íà (îêñèäíî¿) ñõîäèíö³ step ~ ïîêðèòòÿ íà (îêñèäíî¿) ñõîäèíö³; çãëàäæóâàííÿ ñõîäèíêè cracking ðîçòð³ñêóâàííÿ, óòâîðåííÿ òð³ùèí; ðîçëàìóâàííÿ, ëàìàííÿ (íàï³âïðîâ³äíèêîâî¿
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cry ïëàñòèíè ï³ñëÿ ñêðàéáóâàííÿ) stress ~ lines ðîçðèâ ç’ºäíàíü çà ðàõóíîê ìåõàí³÷íèõ íàïðóã cralering: silicon ~ óòâîðåííÿ êðàòåð³â [âîðîíîê] â êðåìí³¿ craze ì³êðîòð³ùèíà | ðîçòð³ñêóâàòèñÿ cream: solder ~ ïàñòà ïðèïîþ creepage âèò³ê ïî ïîâåðõí³ ä³åëåêòðèêà crimper: terminal ~ ïðèñòð³é äëÿ ç’ºäíàííÿ âèâîä³â îáòèñêîì criticality êðèòè÷íå çíà÷åííÿ (õàðàêòåðèñòèêà âõ³äíî¿ ë³í³¿ åëåìåíòó ²Ñ, çì³íà ñèãíàëó íà êîíòðîë³ ïðèâîäèòü äî çì³íè ñèãíàëó íà âèõîä³) cross: greek ~ òåñòîâà ñòðóêòóðà ó âèãëÿä³ õðåñòà (äëÿ ïåðåâ³ðêè ðåçèñòîð³â íà êðèñòàë³) crossbar ïåðåìè÷êà (â íàäïðîâ³äíèêîâîìó åëåìåíò³ Êðîó) crossover ïåðåòèí, òî÷êà ïåðåòèíó air-gap ~ ïåðåòèí ç ïîâ³òðÿíèì çàçîðîì ì³æ ïðîâ³äíèêàìè air-insulated beam-lead ~ ïåðåòèí áëîêîâèõ âèâîä³â ç ïîâ³òðÿíîþ ³çîëÿö³ºþ conductive [conductor] ~ ïåðåòèí ïðîâ³äíèê³â interconnecting [interconnection] ~ ïåðåòèí ì³æç’ºäíàíü ²Ñ crosspoint êîîðäèíàòíèé ïåðåìèêà÷ CMOS ~ ÊÌÎÍ ²Ñ êîîðäèíàòíîãî ïåðåìèêà÷à monolithic two-by-two íàï³âïðîâ³äíèêîâèé ìàòðè÷íèé êîîðäèíàòíèé ïåðåìèêà÷ 2x2 optoelectronic ~ êîîðäèíàòíèé ïåðåìèêà÷ ç îïòðîíèì çâ’ÿçêîì cross-referencer ïðîãðàìà-ôîðìóâà÷ ïåðåõðåñíèõ ïîñèëàíü (â ÑÀÏР²Ñ) crossunder ïåðåòèí ì³æç’ºäíàíü ²Ñ (ç âèêîðèñòàííÿì íèçüêîîìíî¿ ïåðåìè÷êè ç êðåìí³þ) crosswire ïåðåõðåñòÿ (â îïòè÷íîìó ïðèëàä³) crowding: current ~ ñòèñíåííÿ ñòðóìó (ï³äâèùåííÿ ãóñòèíè ñòðóìó íà êðàéîâèõ ä³ëÿíêàõ åì³òåðà) emitter ~ âèò³ñíåííÿ åì³òåðà
pulse ~ íàá³ãàííÿ ³ìïóëüñ³â (â ²Ñ) crown: epitaxial-edge ~ ïîòîâùåííÿ åï³òàêñ³àëüíîãî øàðó íà êðàÿõ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè crow’s-foot ì³êðîòð³ùèíà crucible òèãåëü floating ~ ïëàâàþ÷èé òèãåëü fused silica ~ òèãåëü ç ïëàâëåíîãî êâàðöó single-hearth ~ îäíîñåêö³éíèé òèãåëü two-hearth ~ äâîõñåêö³éíèé òèãåëü «crudule» äð³áí³ äèñïåðñí³ çàáðóäíåííÿ (â íàï³âïðîâ³äíèêîâîìó ïðèëàä³) crust: oxide ~ îêñèäíå ïîêðèòòÿ cryoelectronics êð³îåëåêòðîí³êà cryologic 1. êð³îãåííà ëîã³êà, êð³îëîã³êà 2. êð³îãåííà ëîã³÷íà ²Ñ cryopanel: liquid nitrogen ~ àçîòíà êð³îïàíåëü cryopump êð³îãåííèé íàñîñ cryotron êð³îòðîí tunneling ~ òóíåëüíèé êð³îòðîí, êð³îñàð crystal êðèñòàë acicular ~ ãîë÷àòèé êðèñòàë cleavage ~ êðèñòàë ç îãðàíîâóâàííÿì ïî ïëîùèíàõ ñïàéíîñò³ Czochralsky-grown ~ êðèñòàë, âèðîùåíèé ìåòîäîì ×îõðàëüñüêîãî defect-free ~ áåçäåôåêòíèé êðèñòàë dendritic ~ äåíäðèòíèé êðèñòàë float-zone ~ êðèñòàë, îäåðæàíèé ìåòîäîì çîííî¿ ïëàâêè grown ~ âèðîùåíèé êðèñòàë imperfect ~ íåäîñêîíàëèé êðèñòàë LEG ~ ìîíîêðèñòàë, îäåðæàíèé ìåòîäîì ×îõðàëüñüêîãî ç îáâîë³êàííÿì ðîçïëàâó ³íåðòíîþ ð³äèíîþ liquid ~ ð³äêèé êðèñòàë nematic ~ íåìàòè÷íèé êðèñòàë pipe-shaped ~ êðèñòàë òðóá÷àñòî¿ ôîðìè pulled ~ êðèñòàë, âèðîùåíèé ìåòîäîì âèòÿãàííÿ ribbon ~ ñòð³÷êîâèé êðèñòàë seed ~ ïðèìàíêà; êðèñòàë ïðèìàíêè semiconducting [semiconduc-îr] íàï³âïðîâ³äíèêîâèé êðèñòàë single ~ ìîíîêðèñòàë win ~ äâ³éíèêîâèé êðèñòàë, äâ³éíèê two-valley ~ äâîõäîëèííèé êðèñòàë
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cur vacuum float-zone ~ êðèñòàë, îäåðæàíèé ìåòîäîì çîííî¿ ïëàâêè ó âàêóóì³ II-VI ~ êðèñòàë ñïîëóêè òèïó A²²BVI crystallite êðèñòàë³ò crystallization êðèñòàë³çàö³ÿ explosive ~ âèáóõîâà êðèñòàë³çàö³ÿ laser (beam) ~ ëàçåðíà êðèñòàë³çàö³ÿ liquid-phase ~ êðèñòàë³çàö³ÿ ç ð³äêî¿ ôàçè cube: C– ~ Ñ-êóá; ïðîñòèé [âèðîäæåíèé] êóá (ïðè ãåíåðàö³¿ òåñò³â) D– ~ Ä-êóá (ïðè ãåíåðàö³¿ òåñò³â) primitive ~ ïðîñòèé êóá (â îá÷èñëåíí³ Äêóá³â) propagation D- ~ Ä-êóá ïðîñóâàííÿ (â Äàëãîðèòì³) cup: Faraday ~ öèë³íäð Ôàðàäåÿ cure îòâåðä³âàííÿ | îòâåðä³âàòè epoxy ~ îòâåðä³âàííÿ åïîêñèäíî¿ ñìîëè infrared ~ îòâåðä³âàííÿ ²×âèïðîì³íþâàííÿì ultraviolet ~ îòâåðä³âàííÿ ÓÔâèïðîì³íþâàííÿì current (åëåêòðè÷íèé) ñòðóì avalanche ~ ëàâèííèé ñòðóì back ~ çâîðîòíèé ñòðóì base ~ ñòðóì áàçè, áàçîâèé ñòðóì bias ~ ñòðóì çì³ùåííÿ branch ~ ñòðóì ã³ëêè breakdown ~ ñòðóì ïðîáîþ channel ~ ñòðóì êàíàëó (ïîëüîâîãî òðàíçèñòîðà) critical ~ êðèòè÷íèé ñòðóì (â íàäïðîâ³äíèêàõ) cutoff ~ ñòðóì â³äñ³÷åííÿ dark ~ òåìíîâèé ñòðóì diffusion ~ äèôóç³éíèé ñòðóì drain ~ ñòðóì ñòîêó (ïîëüîâîãî òðàíçèñòîðà) drift ~ äðåéôîâèé ñòðóì electron ~ åëåêòðîííèé ñòðóì electron-beam induced ~ ñòðóì, íàâåäåíèé åëåêòðîííèì ïó÷êîì forward ~ ïðÿìèé ñòðóì forward-biased ~ ñòðóì ïðè ïðÿìîìó çì³ùåíí³ Fowler-Nordheim tunneling ~ òóíåëüíèé ñòðóì Ôîóëåðà–Íîðäõåéìà
gate ~ ñòðóì çàòâîðà (ïîëüîâîãî òðàíçèñòîðà) Hall ~ ñòðóì Õîëëà hole ~ ä³ð÷àñòèé ñòðóì injection ~ ³íæåêö³éíèé ñòðóì Josephson tunnel ~ äæîçåôñîíîâñüêèé òóíåëüíèé ñòðóì laser-beam induced ~ ñòðóì, íàâåäåíèé ëàçåðíèì âèïðîì³íþâàííÿì leakage ~ ñòðóì âèòîêó light ~ ôîòîñòðóì majority(-carrier)~ ñòðóì îñíîâíèõ íîñ³¿â minority(-carrier) ~ ñòðóì íåîñíîâíèõ íîñ³¿â noise ~ øóìîâèé ñòðóì peak ~ ï³êîâèé ñòðóì; ìàêñèìàëüíèé ñòðóì pinch-off ~ ñòðóì â³äñ³÷åííÿ quiescent ~ 1. ñòðóì ñïîêîþ 2. ñòðóì â ðîáî÷³é òî÷ö³ (âîëüò-àìïåðíî¿ õàðàêòåðèñòèêè) recombination ~ ñòðóì ðåêîìá³íàö³¿ reverse ~ çâîðîòíèé ñòðóì reverse-biased ~ ñòðóì ïðè çâîðîòíîìó çì³ùåíí³ saturation ~ ñòðóì íàñè÷åííÿ SCL [space-charge limited] ~ ñòðóì, îáìåæåíèé îá’ºìíèì çàðÿäîì stray ~ 1. ñòðóì âèòîêó 2. ïàðàçèòíèé ñòðóì superconduction ~ ñòðóì íàäïðîâ³äíîñò³ threshold ~ ïîðîãîâèé ñòðóì tunnel (ing) ~ òóíåëüíèé ñòðóì valley ~ ñòðóì äîëèíè Zener ~ òóíåëüíèé [çåíåðîâñüêèé] ñòðóì curvature: band-edge ~ âèãèí êðàþ (åíåðãåòè÷íî¿) çîíè curve 1. êðèâà 2. õàðàêòåðèñòèêà current-voltage ~ âîëüò-àìïåðíà õàðàêòåðèñòèêà, ÂÀÕ frequency-response ~ àìïë³òóäíî-÷àñòîòíà õàðàêòåðèñòèêà, ÀÕ× life ~ êðèâà íàä³éíîñò³ load ~ õàðàêòåðèñòèêà íàâàíòàæåííÿ pumpdown ~ õàðàêòåðèñòèêà â³äêà÷óâàííÿ saturation ~ êðèâà íàñè÷åííÿ speed-power ~ êðèâà çàëåæíîñò³ øâèäêî䳿 â³ä ïîòóæíîñò³ ðîçñ³ÿííÿ (äëÿ ëîã³÷íèõ ²Ñ) transient ~ õàðàêòåðèñòèêà ïåðåõ³äíîãî ïðîöåñó yield ~ êðèâà âèõîäó ãîäíèõ
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cyc custom 1. çàìîâëåíà ²Ñ 2. çàìîâëåíèé; electron ñóclotron resonance ~ îñàäæåííÿ ç ñïåö³àë³çîâàíèé ïàðîãàçîâî¿ ñóì³ø³ ç âèêîðèñòàííÿì ÍÂ×full ~ ïîâí³ñòþ çàìîâëåíà ²Ñ ïëàçìè â óìîâàõ åëåêòðîííîãî semi ~ íàï³âçàìîâëåíà ²Ñ (íà îñíîâ³ öèêëîòðîííîãî ðåçîíàíñó áàçîâîãî ìàòðè÷íîãî êðèñòàëà) epitaxial ~ õ³ì³÷íå îñàäæåííÿ custom-build âèãîòîâëÿòè [ïðîâîäèòè] çà åï³òàêñ³àëüíîãî øàðó ç ïàðîâî¿ ôàçè çàìîâëåííÿì excimer-laser-induced - õ³ì³÷íå îñàäæåííÿ custom-design ïðîåêòóâàííÿ [ðîçðîáêà] çà ç ïàðîâî¿ ôàçè, ùî ñòèìóëþº çàìîâëåííÿì | ïðîåêòóâàòè [ðîçðîáëÿòè] çà âèïðîì³íþâàííÿì åêñèìåðíîãî ëàçåðà çàìîâëåííÿì gradient field plasma ~ ïëàçìîõ³ì³÷íå customer: îñàäæåííÿ ç ïàðîâî¿ ôàçè â åëåêòðè÷íîìó foundry ~ çàìîâíèê ñïåö³àë³çîâàíèõ ²Ñ ïîë³ ³ç çì³ííèì ãðà䳺íòîì semiconductor ~ çàìîâíèê homogeneous ~ ãîìîãåííå õ³ì³÷íå íàï³âïðîâ³äíèêîâèõ ²Ñ îñàäæåííÿ ç ïàðîâî¿ ôàçè specific ~ çàìîâíèê ñïåö³àë³çîâàíèõ ²Ñ laser-induced ~ ëàçåðíî-ñòèìóëüîâàíå customization ðåàë³çàö³ÿ ²Ñ ó âèãëÿä³ õ³ì³÷íå îñàäæåííÿ ç ïàðîâî¿ ôàçè çàìîâëåíèõ ïðèëàä³â; ñïåö³àë³çàö³ÿ ²Ñ liquefaction ~ õ³ì³÷íå îñàäæåííÿ ç ïàðîâî¿ customized çàìîâëåíèé; ñïåö³àë³çîâàíèé ôàçè ç ïðîì³æíèì óòâîðåííÿì ð³äêî¿ ôàçè custom-made çàìîâëåíèé, âèãîòîâëåíèé çà low-pressure ~ õ³ì³÷íå îñàäæåííÿ ç ïàðîâî¿ çàìîâëåííÿì ôàçè ïðè íèçüêîìó òèñêó cut: low-temperature ~ íèçüêîòåìïåðàòóðíå crystal ~ çð³ç êðèñòàëà õ³ì³÷íå îñàäæåííÿ ç ïàðîâî¿ ôàçè laser ~ âèð³ç, ñôîðìîâàíèé ëàçåðíèì optical [photo] ~ ôîòîõ³ì³÷íå îñàäæåííÿ ç ïðîìåíåì, ëàçåðíèé âèð³ç ïàðîâî¿ ôàçè oxide ~ êàíàâêà â îêñèäíîìó øàð³ plasma-enchanced ~ ïëàçìîõ³ì³÷íå scribe ~ ë³í³ÿ ñêðàéáóâàííÿ [ïëàçìîñòèìóëüîâàíå õ³ì³÷íå] îñàäæåííÿ ç cutoff: ïàðîâî¿ ôàçè channel ~ â³äñ³÷åííÿ êàíàëó (ïîëüîâîãî thermal ~ òåðìîõ³ì³÷íå îñàäæåííÿ ç ïàðîâî¿ òðàíçèñòîðà) ôàçè current ~ â³äñ³÷åííÿ ñòðóìó ultrahigh vacuum ~ õ³ì³÷íå îñàäæåííÿ ç diffusion ~ çàâåðøåííÿ ïðîöåñó äèôó糿 ïàðîâî¿ ôàçè â íàäâèñîêîìó âàêóóì³ cutting ð³çàííÿ, ð³çêà very low-pressure ~ õ³ì³÷íå îñàäæåííÿ ç annular ~ ð³çêà äèñêîì ç âíóòð³øíüîþ ïàðîâî¿ ôàçè ïðè äóæå íèçüêîìó òèñêó ð³æó÷îþ êðîìêîþ cyclability çäàòí³ñòü âèòðèìóâàòè 䳿, ùî laser-beam ~ ëàçåðíå ð³çàííÿ ïåð³îäè÷íî ïîâòîðþþòüñÿ (íàïð. peripheral ~ ð³çêà äèñêîì ³ç çîâí³øíüîþ ïåðåìèêàííÿ) ð³æó÷îþ êðîìêîþ cycle öèêë; ïåð³îä | ïåð³îäè÷íî wafer ~ ðîçð³çàííÿ (ìîíîêðèñòàë³÷íîãî) ïîâòîðþâàòèñÿ çëèòêà íà íàï³âïðîâ³äíèêîâ³ ïëàñòèíè bounding ~ öèêë [òðèâàë³ñòü] îïåðàö³¿ CVD õ³ì³÷íå îñàäæåííÿ ç ïàðîâî¿ ôàçè òåðìîêîìïðåñ³¿ atmospheric pressure ~ õ³ì³÷íå îñàäæåííÿ design ~ 1. ìàðøðóò ïðîåêòóâàííÿ ç ïàðîâî¿ ôàçè ïðè àòìîñôåðíîìó òèñêó (âêëþ÷àþ÷î¿ îòðèìàííÿ òåõí³÷íîãî catalytic ~ êàòàë³òè÷íå õ³ì³÷íå îñàäæåííÿ çàâäàííÿ ³ âèäà÷ó òåõí³÷íî¿ äîêóìåíòàö³¿ íà ç ïàðîâî¿ ôàçè âèãîòîâëåííÿ) 2. öèêë ïðîåêòóâàííÿ cryogenic ~ õ³ì³÷íå îñàäæåííÿ ç ïàðîâî¿ drive-in ~ öèêë ðîçãîíó äîì³øêè ôàçè íà îõîëîäæåíó äî íåãàòèâíèõ duty ~ ðîáî÷èé öèêë òåìïåðàòóð ï³äêëàäêó fabrication ~ òåõíîëîã³÷íèé öèêë double-excitation photo ~ ôîòîõ³ì³÷íå heat-treatment ~ öèêë òåðì³÷íî¿ îáðîáêè îñàäæåííÿ ç ïàðîâî¿ ôàçè ç ïîäâ³éíèì memory ~ öèêë ðîáîòè ïàì’ÿò³ ôîòîçáóäíèêîì
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def read-and-regenerate ~ öèêë ïðî÷èòóâàííÿ ç ðåãåíåðàö³ºþ read-modify-write ~ öèêë ïðî÷èòóâàííÿ, ìîäèô³êàö³¿ ³ çàïèñè read-restore ~ öèêë ïðî÷èòóâàííÿ ç ðåãåíåðàö³ºþ cycling: temperature ~ öèêë³÷íà çì³íà òåìïåðàòóðè
relational ~ ðåëÿö³éíà áàçà äàíèõ VLSI design ~ áàçà äàíèõ äëÿ ïðîåêòóâàííÿ ÑÂ²Ñ data-slice ñåêö³îíîâàíèé ì³êðîïðîöåñîð death: slow ~ äåãðàäàö³ÿ ïàðàìåòð³â òðàíçèñòîðà (íàïð. ïîâ’ÿçàíà ³ç çàáðóäíåííÿì ïîâåðõí³, íàï³âïðîâ³äíèêà) debleeding çíÿòòÿ îáëîþ, âèäàëåííÿ çàâóñåíö³â D deburring çíÿòòÿ îáëîþ, âèäàëåííÿ çàâóñåíö³â damage 1. ïîøêîäæåííÿ; ðóéíóâàííÿ | decapsulation ðîçêðèòòÿ [äåìîíòàæ] êîðïóñó âèêëèêàòè ïîøêîäæåííÿ; ðóéíóâàòè 2. äåôåêò (ðåçóëüòàò ïîøêîäæåííÿ) (äèâ. ò-æ decay ñïàä (ëîã³÷íîãî ð³âíÿ â öèôðîâ³é ²Ñ) decision: defect) go/no go ~ ð³øåííÿ ïðî ïðèäàòí³ñòü crystal ~s ïîðóøåííÿ êðèñòàë³÷íèõ ãðàòîê ïðèëàä³â (ïðè â³äáðàêîâî÷íèõ handling ~ ïîøêîäæåííÿ (íàïð. âèïðîáóâàííÿõ) íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) ïðè pass/fail ~ ð³øåííÿ ïðî ïðèäàòí³ñòü òðàíñïîðòóâàíí³ àáî íàâàíòàæóâàëüíîïðèëàä³â (ïðè â³äáðàêîâî÷íèõ ðîçâàíòàæóâàëüíèõ îïåðàö³ÿõ âèïðîáóâàííÿõ) implant(ation)~ äåôåêò ³ìïëàíòàö³¿, äåôåêò, decoder: âèêëèêàíèé ³îííîþ ³ìïëàíòàö³ºþ FPLA ~ ²Ñ äåêîäåðà íà îñíîâ³ ìàòðèö³ ion-beam ~ äåôåêò, âèêëèêàíèé ³îííèì ëîã³÷íèõ åëåìåíò³â, ïðîãðàìîâàíî¿ îïðîì³íþâàííÿì êîðèñòóâà÷åì ion-bombardment ~ äåôåêò, âèêëèêàíèé one-chip ~ îäíîêðèñòàëüíà ²Ñ äåêîäåðà ³îííèì áîìáàðäóâàííÿì Viterbi ~ äåêîäåð ³òåðá³ ionization ~ äåôåêò, âèêëèêàíèé ³îííèì decomposition 1. (õ³ì³÷íå) ðîçêëàäàííÿ; îïðîì³íþâàííÿì ðîçïàä 2. äåêîìïîçèö³ÿ, ðîçáèòòÿ (íàïð. laser-induced ~ ïîøêîäæåííÿ ëàçåðíèì ñèñòåìè) ïðîìåíåì glow-discharge ~ ðîçêëàäàííÿ â òë³þ÷îìó near-surface ~s ïîøêîäæåííÿ [ïîðóøåííÿ] ðîçðÿä³ â ïðèïîâåðõíåâîìó øàð³ pyrolythic [thermal] ~ ï³ðîë³ç radiation ~s ðàä³àö³éí³ ïîøêîäæåííÿ decoration ôàðáóâàííÿ (íàïð. äëÿ âèÿâëåííÿ residual ~ çàëèøêîâèé äåôåêò (íàïð. ï³ñëÿ äåôåêò³â) ïðîâåäåííÿ òåõíîëîã³÷íî¿ îïåðàö³¿) dedicated (âóçüêî) ñïåö³àë³çîâàíèé static electricity ~ ïîøêîäæåííÿ çàðÿäàìè defect äåôåêò ñòàòè÷íî¿ åëåêòðèêè antisite ~ àíòèâóçëîâèé äåôåêò (íàïð. äëÿ substrate ~s ïîøêîäæåííÿ [ïîðóøåííÿ] ãåòåðóâàííÿ) ïðèïîâåðõíåâîãî øàðó ï³äêëàäêè (íàïð. bird’s beak ~ 1. äåôåêò òèïó «ïòàøèíèé êðèñòàë³÷í³ äåôåêòè ³ óïðîâàäæåí³ àòîìè) äçüîá» (ïðè á³÷íîìó ï³äòðàâëåíí³ îêñèäó â Darlington ïàðà Äàðë³íãòîíà ²Ñ ç á³÷íîþ ä³åëåêòðè÷íîþ ³çîëÿö³ºþ) 2. data: òî÷êîâèé ïðîêîë (â îêñèäíîìó øàð³) design ~ ïðîåêòí³ äàí³; êîíñòðóêòèâí³ äàí³ boundary ~ äåôåêò íà ìåæ³ ðîçä³ëó layout ~ òîïîëîã³÷í³ äàí³ clustered ~s çãðóïîâàí³ äåôåêòè database: crystal ~ ñòðóêòóðíèé äåôåêò êðèñòàë³÷íèõ distributed ~ ðîçïîä³ëåíà áàçà äàíèõ ãðàòîê hierarchical ~ ³ºðàðõ³÷íà áàçà äàíèõ dislocation ~ äèñëîêàö³ÿ integrated ~ ³íòåãðîâàíà áàçà äàíèõ extended ~ ïðîòÿæíèé äåôåêò network structured ~ áàçà äàíèõ ç Frenkel ~ äåôåêò ïî Ôðåíêåëþ ìåðåæíîþ ñòðóêòóðîþ
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del hot spot ~ äåôåêò ó âèãëÿä³ ïåðåãð³òî¿ ä³ëÿíêè impurity ~ äîì³øêîâèé äåôåêò interstitial ~ äåôåêò óïðîâàäæåííÿ lattice ~ äåôåêò êðèñòàë³÷íèõ ãðàòîê line ~ ë³í³éíà äèñëîêàö³ÿ loose ~ íåçâ’ÿçàíèé äåôåêò (â ²Ñ) native ~ âëàñíèé äåôåêò opaque ~ íåïðîçîðèé äåôåêò (íà ôîòîøàáëîí³) oxide ~ äåôåêò îêñèäíîãî øàðó pholo(masking)-induced ~ äåôåêò, âèêëèêàíèé ôîòîë³òîãðàô³ºþ pinhole ~ òî÷êîâèé ïðîêîë (â îêñèäíîìó øàð³) point ~ òî÷êîâèé äåôåêò radiation(-induced) ~ ðàä³àö³éíèé äåôåêò Schottky ~ äåôåêò ïî Øîòê³ substitutional ~ äåôåêò çàì³ùåííÿ vacancy ~ âàêàíñ³ÿ visual ~ âèäèìèé äåôåêò definition 1. âèçíà÷åííÿ; îïèñ 2. ôîðìóâàííÿ ìàëþíêà 3. ÷³òê³ñòü, ð³çê³ñòü (çîáðàæåííÿ) behavioral ~ ïîâåä³íêîâèé îïèñ carrier ~ âèçíà÷åííÿ [îïèñ] ï³äêëàäêè ïåðåä âèãîòîâëåííÿì ñõåìè (âêëþ÷ຠîïèñ ðîçòàøóâàííÿ ïåðèôåð³éíî¿ ÷àñòèíè, åëåìåíò³â íà êðèñòàë³, ì³ñöÿ òðàñóâàííÿ, òîìîãðàô³þ ðîçïîä³ëó ïîòóæíîñòåé ³ ³íø³ îñîáëèâîñò³) channel ~ òðàñóâàííÿ ç’ºäíàíü edge ~ ÷³òê³ñòü [ð³çê³ñòü] êðàþ fine-line ~ ôîðìóâàííÿ ìàëþíêà ç åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â, ôîðìóâàííÿ ìàëþíêà ç âèñîêèì äîçâîëîì (ðîçøèðåííÿì) mask ~ ôîðìóâàííÿ ìàëþíêà íà ôîòîøàáëîí³ mask-level ~ âèçíà÷åííÿ ðîçòàøóâàííÿ áëîê³â ïî ôîòîøàáëîíàõ metal ~ ôîðìóâàííÿ ìàëþíêà â øàð³ ìåòàë³çàö³¿ pattern ~ ôîðìóâàííÿ ìàëþíêà product ~ ñïåöèô³êàö³ÿ [ôîðìóâàííÿ òåõí³÷íèõ âèìîã] ïðîåêòó âèðîáó resist ~ ôîðìóâàííÿ ìàëþíêà â øàð³ ðåçèñòó scribeline ~ ôîðìóâàííÿ ë³í³é ñêðàéáóâàííÿ silicon-island ~ ôîðìóâàííÿ ìàëþíêà êðåìí³ºâîãî îñòð³âöÿ system ~ îïèñ ñèñòåìè
technology ~ âèçíà÷åííÿ âèìîã äî òåõíîëî㳿 thin-film ~ ôîðìóâàííÿ òîíêîïë³âêîâîãî ìàëþíêà trench mask ~ ôîðìóâàííÿ ìàëþíêà íà ôîòîøàáëîí³ äëÿ âèòðàâëÿííÿ êàíàâîê deflash âèäàëÿòè çàâóñåíö³, çí³ìàòè îáëîé; ãàëòóâàòè deflasher óñòàíîâêà äëÿ âèäàëåííÿ çàâóñåíö³â àáî çíÿòòÿ îáëîþ; óñòàíîâêà äëÿ ãàëòóâàííÿ deflux âèäàëÿòè ôëþñ defluxer óñòàíîâêà äëÿ âèäàëåííÿ ôëþñó deformation äåôîðìàö³ÿ; ñïîòâîðåííÿ image ~ ñïîòâîðåííÿ çîáðàæåííÿ degas(ing): high-vacuum ~ çíåãàæóâàííÿ ó âèñîêîìó âàêóóì³ degeneracy âèðîäæåííÿ; ñòóï³íü âèðîäæåííÿ à doped into ~ ëåãîâàíèé äî ñòàíó âèðîäæåííÿ degradation äåãðàäàö³ÿ, (ïîñòóïîâå) ïîã³ðøåííÿ (íàïð. õàðàêòåðèñòèê) beta ~ çìåíøåííÿ êîåô³ö³ºíòà ï³äñèëåííÿ ïî ñòðóìó â ñõåì³ ³ç çàãàëüíèì åì³òåðîì, çìåíøåííÿ áåòà, çìåíøåííÿ b(áåòà) mobility ~ çìåíøåííÿ ðóõëèâîñò³ íîñ³¿â çàðÿäó photomask ~ äåãðàäàö³ÿ ôîòîøàáëîíó total dose ~ äåãðàäàö³ÿ (ïðèëàäó) ï³ä âïëèâîì ñóìàðíî¿ äîçè ðàä³àö³¿ UV ~ äåãðàäàö³ÿ (ïðèëàäó) ï³ä âïëèâîì ÓÔâèïðîì³íþâàííÿ degreaser óñòàíîâêà äëÿ çíåæèðåííÿ immersion-vapor ~ óñòàíîâêà äëÿ çíåæèðåííÿ ³ç çàíóðåííÿì â ð³äêèé ðîç÷èííèê ³ â ïàð³ ðîç÷èííèêà ultrasonic vapor ~ óñòàíîâêà äëÿ çíåæèðåííÿ degree confidence ì³ðà äîñòîâ³ðíîñò³ (ïðè òåñòóâàíí³ Â²Ñ) dehydrator: centrifugal ~ â³äöåíòðîâèé äåã³äðàòàòîð, óñòàíîâêà äëÿ â³äöåíòðîâîãî îáåçâîäíåííÿ ³ ñóøêè (íàïð. íàï³âïðîâ³äíèêîâèõ ïëàñòèí) deionizer 1. ³îíîîáì³ííà óñòàíîâêà 2. óñòàíîâêà äå³îíèçàö³¿ delay 1. çàòðèìêà; çàï³çíåííÿ | çàòðèìóâàòè; çàï³çíþâàòèñÿ 2. ÷àñ çàòðèìêè adjustable ~ ðåãóëüîâàíà çàòðèìêà ambiguity ~ íåîäíîçíà÷íà çàòðèìêà
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den asymmetric ~ çàòðèìêà, ùî wire [wiring] ~s âèìîãè äî òðàñóâàííÿ âèêîðèñòîâóºòüñÿ äëÿ âåðèô³êàö³¿ ²Ñ ç demineralization î÷èùåííÿ âîäè çà óðàõóâàííÿì ð³çíèö³ òðèâàëîñòåé ³ìïóëüñ³â äîïîìîãîþ ³îíîîáì³ííèõ óñòàíîâîê carrier-storage ~ ÷àñ çàòðèìêè, demineralizer ³îíîîáì³ííà óñòàíîâêà îáóìîâëåíèé íàêîïè÷åííÿì ³ mixed-bed ~ ³îíîîáì³ííà óñòàíîâêà, ðîçñìîêòóâàííÿì íîñ³¿â çàïîâíåíà àí³îíîîáì³ííîþ ³ extreme ~ ãðàíè÷íà çàòðèìêà; êðèòè÷íà êàò³îíîîáì³ííîþ ñìîëàìè çàòðèìêà dendrite äåíäðèò fall ~ çàòðèìêà ïåðåìèêàííÿ ëîã³÷íî¿ ñõåìè metallic ~ ìåòàëåâèé äåíäðèò ç ñòàí «1» â ñòàí «0» dendrogram äåíäðîãðàììà fanout-dependent ~ çàòðèìêà, ÿêà çàëåæèòü (âèêîðèñòîâóºòüñÿ â êëàñòåðíîìó àíàë³ç³) â³ä íàâàíòàæåííÿ densely-ðàñked ç âèñîêîþ ãóñòèíîþ gate ~ ÷àñ çàòðèìêè ðîçïîâñþäæåííÿ óïàêîâêè; ç âèñîêîþ ãóñòèíîþ ðîçì³ùåííÿ ñèãíàëó íà ëîã³÷íèé åëåìåíò åëåìåíò³â; ç ù³ëüíèì êîìïîíóâàííÿì interchip ~ ÷àñ çàòðèìêè ðîçïîâñþäæåííÿ density 1. ãóñòèíà; êîíöåíòðàö³ÿ 2. ñèãíàëó íà ç’ºäíàííÿõ ì³æ êðèñòàëàìè íàïðóæåí³ñòü ïîëÿ interconnection ~ ÷àñ çàòðèìêè ïîøèðåííÿ acceptor ~ êîíöåíòðàö³ÿ àêöåïòîð³â ñèãíàëó, îáóìîâëåíèé ì³æç’ºäíàííÿìè cell ~ ãóñòèíà óïàêîâêè, ÿêà âèì³ðþºòüñÿ internal gate ~ ÷àñ çàòðèìêè ïîøèðåííÿ ê³ëüê³ñòþ åëåìåíò³â (íàïð. â ÇÓ) ñèãíàëó íà ëîã³÷íèé åëåìåíò channel ~ ãóñòèíà (ðîçì³ùåííÿ) ç’ºäíàíü â mean logistic ~ ñåðåäí³é ÷àñ çàòðèìêè â êàíàë³ ëîã³÷íèõ ñõåìàõ charge-packet ~ ãóñòèíà ïàêåò³â çàðÿä³â path ~ çàòðèìêà ñèãíàëó ïî øëÿõó chip ~ 1. ãóñòèíà óïàêîâêè â êðèñòàë³ ²Ñ 2. ïðîõîäæåííÿ; çàòðèìêà ïîøèðåííÿ ñèãíàëó ñòóï³íü ³íòåãðàö³¿ ²Ñ rise ~ çàòðèìêà ïåðåìèêàííÿ ëîã³÷íî¿ ñõåìè circuit ~ ãóñòèíà óïàêîâêè ²Ñ ç ñòàí «0» â ñòàí «1» component ~ ãóñòèíà óïàêîâêè åëåìåíò³â stage ~ ÷àñ çàòðèìêè ïîøèðåííÿ ñèãíàëó íà (²Ñ) êàñêàä detect ~ ãóñòèíà äåôåêò³â; êîíöåíòðàö³ÿ stray ~ ïàðàçèòíà çàòðèìêà äåôåêò³â switching ~ ÷àñ çàòðèìêè ïîøèðåííÿ device ~ ãóñòèíà óïàêîâêè ïðèëàä³â ñèãíàëó ïðè ïåðåìèêàíí³ dislocation ~ êîíöåíòðàö³ÿ äèñëîêàö³é time ~ 1. òèì÷àñîâà çàòðèìêà 2. ÷àñ donor ~ êîíöåíòðàö³ÿ äîíîð³â çàòðèìêè DX-center-limited electric ~ ãóñòèíà turn-off ~ ÷àñ çàòðèìêè ïîøèðåííÿ ñèãíàëó åëåêòðîí³â, îáìåæåíà ÄÕ-öåíòðàìè ïðè âèêëþ÷åíí³ electron ~ êîíöåíòðàö³ÿ åëåêòðîí³â turn-on ~ ÷àñ çàòðèìêè ïîøèðåííÿ ñèãíàëó element ~ ãóñòèíà óïàêîâêè åëåìåíò³â (²Ñ) ïðè âêëþ÷åíí³ energy-level ~ ãóñòèíà (åíåðãåòè÷íèõ) unit ~ îäèíè÷íà çàòðèìêà ñòàí³â wiring ~ ÷àñ çàòðèìêè ïîøèðåííÿ ñèãíàëó, equilibrium ~ ïðÿìîâèñíà êîíöåíòðàö³ÿ îáóìîâëåíèé ç’ºäíàííÿìè etch pit ~ ãóñòèíà (ðîçòàøóâàííÿ) ÿìîê worst-case ~ çàòðèìêà íà ÿêíàéã³ðøèé òðàâëåííÿ âèïàäîê function(al) ~ ôóíêö³îíàëüíà ãóñòèíà delid ðîçêðèâàòè [äåìîíòóâàòè] êîðïóñ gate ~ ãóñòèíà óïàêîâêè ²Ñ â åêâ³âàëåíòíèõ delineation ôîðìóâàííÿ ìàëþíêà; ëîã³÷íèõ åëåìåíòàõ ôîðìóâàííÿ ðåëüºôó (äèâ. ò-æ definition) hole ~ êîíöåíòðàö³ÿ ä³ðîê photolithographic ~ ôîðìóâàííÿ ìàëþíêà integrated-circuit [integrated-microcircuit ìåòîäîì ôîòîë³òîãðàô³¿ ðàñkaging, integration] ~ 1. ãóñòèíà photoresist pattern ~ ôîðìóâàííÿ ìàëþíêà óïàêîâêè ²Ñ 2. ñòóï³íü ³íòåãðàö³¿ ²Ñ â øàð³ ôîòîðåçèñòó interconnection ~ ãóñòèíà (ðîçì³ùåííÿ) demand: ì³æç’ºäíàíü
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dep inversion ~ ãóñòèíà íîñ³¿â â ³íâåðñ³éí³é îáëàñò³ ion flux ~ ïîò³ê ³îí³â irradiation current ~ ãóñòèíà ñòðóìó çàðÿäæåíèõ ÷àñòèíîê lateral packing ~ ãîðèçîíòàëüíà ãóñòèíà óïàêîâêè memory ~ ãóñòèíà (ðîçì³ùåííÿ) åëåìåíò³â ïàì’ÿò³ net doping ~ ïîâíà êîíöåíòðàö³ÿ (ëåãóþ÷î¿) äîì³øêè neutral flux ~ ïîò³ê íåéòðàëüíèõ ÷àñòèíîê occupation ~ ãóñòèíà çàïîâíåííÿ (åíåðãåòè÷íèõ ð³âí³â) optical ~ îïòè÷íà ãóñòèíà packaging [ðàñking] ~ ãóñòèíà óïàêîâêè; ãóñòèíà êîìïîíóâàííÿ parts ~ ãóñòèíà ìîíòàæó åëåêòðîííèõ êîìïîíåíò³â pin ~ 1. ãóñòèíà (ðîçòàøóâàííÿ) âèâîä³â (íà äðóêîâàí³é ïëàò³) 2. â³äñòàíü ì³æ âèâîäàìè êîðïóñó IC space-charge ~ ãóñòèíà îá’ºìíîãî çàðÿäó surface ~ ïîâåðõíåâà ãóñòèíà; ïîâåðõíåâà êîíöåíòðàö³ÿ surface-state ~ ãóñòèíà ïîâåðõíåâèõ ñòàí³â wire [wiring] ~ ãóñòèíà (ðîçì³ùåííÿ) ç’ºäíàíü denuding: surface ~ î÷èùåííÿ ïîâåðõí³ (íàïð. ï³äêëàäêè); ðîçêðèòòÿ ïîâåðõí³ dependability íàä³éí³ñòü dependence: orientation ~ on crystal growth çàëåæí³ñòü øâèäêîñò³ ðîñòó êðèñòàëà â³ä íàïðÿìó êðèñòàëîãðàô³÷íèõ îñåé deplete îá³äíÿòè; âèñíàæóâàòè depletion çá³äíåííÿ; âèñíàæåííÿ deep ~ ãëèáîêå çá³äíåííÿ depletion-type ïðàöþþ÷èé â ðåæèì³ çá³äíåííÿ depopulation ñïóñòîøåííÿ, çìåíøåííÿ çàñåëåíî¿ (åíåðãåòè÷íîãî ð³âíÿ) deposit îáëîæåíèé øàð | îáëÿãàòè(öÿ) deposition îñàäæåííÿ amorphous like ~ îñàäæåííÿ àìîðôíî¿ ïë³âêè blanket ~ îñàäæåííÿ ïîêðèòòÿ íà âñþ ïîâåðõíþ chemical ~ õ³ì³÷íå îñàäæåííÿ
chemical vapor ~ õ³ì³÷íå îñàäæåííÿ ç ïàðîâî¿ ôàçè (äèâ. ò-æ CVD) diffusional ~ äèôóç³éíå îñàäæåííÿ dynamic ~ îñàäæåííÿ íà ðóõîìó ïîâåðõíþ (íàïð. íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) electrochemical ~ åëåêòðîõ³ì³÷íå îñàäæåííÿ electroless ~ îñàäæåííÿ ìåòîäîì õ³ì³÷íîãî â³äíîâëåííÿ electrolythic ~ åëåêòðîë³òè÷íå îñàäæåííÿ, åëåêòðîîñàäæåííÿ electron-beam ~ åëåêòðîííî-ïðîìåíåâå îñàäæåííÿ epitaxial ~ îñàäæåííÿ åï³òàêñ³àëüíîãî øàðó evaporation [evaporative] ~ îñàäæåííÿ ç ïàðîâî¿ ôàçè excimer-induced ~ îñàäæåííÿ, ùî ñòèìóëþº âèïðîì³íþâàííÿì åêñèìåðíîãî ëàçåðà film ~ îñàäæåííÿ ïë³âêè gas ~ îñàäæåííÿ ç ãàçîâî¿ ôàçè glow-discharge ~ îñàäæåííÿ â òë³þ÷îìó ðîçðÿä³ high-rate ~ âèñîêîïðîäóêòèâíèé ïðîöåñ îñàäæåííÿ ion-beam (induced) ~ ³îííî-ïó÷êîâå îñàäæåííÿ ionized-cluster beam ~ íàïðàâëåíå îñàäæåííÿ ³îí³çîâàíèõ ìîëåêóë ðå÷îâèíè laser gold ~ ëàçåðíå îñàäæåííÿ çîëîòà laser-induced ~ ëàçåðíî-ñòèìóëüîâàíå îñàäæåííÿ laser photo-assisted ~ ëàçåðíå ôîòîñòèìóëüîâàíå îñàäæåííÿ laser photochemical ~ ëàçåðíå ôîòîõ³ì³÷íå îñàäæåííÿ low-temperature vapor ~ íèçüêîòåìïåðàòóðíå îñàäæåííÿ ç ïàðîâî¿ ôàçè metal ~ îñàäæåííÿ (øàðó) ìåòàëó; ìåòàë³çàö³ÿ metall-organic ~ îñàäæåííÿ (ïë³âîê) ìåòîäîì ðîçêëàäàííÿ ìåòàëîîðãàí³÷íî¿ ñïîëóêè microcrystalline like ~ îñàäæåííÿ ïë³âîê ç ì³êðîêðèñòàë³÷íîþ ñòðóêòóðîþ microwave plasma reactive vapor ~ ðåàêòèâíå îñàäæåííÿ ç ïàðîâî¿ ôàçè, ùî ñòèìóëþº ÑÂ×-ïëàçìîþ molecular-beam ~ ìîëåêóëÿðíîïó÷êîâå îñàäæåííÿ
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des multiple-stage ~ áàãàòîñòóï³í÷àòå process ~ äåñêðèïòîð ïðîöåñó îñàäæåííÿ descumming âèäàëåííÿ íåïðîÿâëåíîãî oblique ~ îñàäæåííÿ ï³ä ãîñòðèì êóòîì äî ôîòîðåçèñòó ïîâåðõí³ desiccant îñóøóâà÷ open-tube ~ îñàäæåííÿ ñïîñîáîì â³äêðèòî¿ design 1. ïðîåêòóâàííÿ; ðîçðîáêà; òðóáè êîíñòðóþâàííÿ | ïðîåêòóâàòè; ðîçðîáëÿòè; photochemical ~ ôîòîõ³ì³÷íå îñàäæåííÿ êîíñòðóþâàòè 2. ïðîåêò; ðîçðîáêà; photo-initiated ~ ôîòîñòèìóëüîâàíå êîíñòðóêö³ÿ; ñõåìà îñàäæåííÿ artwork ~ ðîçðîáêà îðèã³íàëó photolytic ~ ôîòîë³òè÷íå îñàäæåííÿ (ôîòîøàáëîíà) photon-controlled ~ îïòè÷íî êîíòðîëüîâàíå automated ~ àâòîìàòèçîâàíå ïðîåêòóâàííÿ îñàäæåííÿ automatic ~ àâòîìàòè÷íå ïðîåêòóâàííÿ physical vapor ~ òåðìîâàêóóìíå îñàäæåííÿ bipolar ~ ðîçðîáêà á³ïîëÿðíèõ ²Ñ ç ïàðîâî¿ ôàçè block ~ 1. áëîêîâå [ôðàãìåíòàðíå] plasma-assisted laser ~ ïëàçìîñòèìóëüîâàíå ïðîåêòóâàííÿ 2. áëîêîâà êîíñòðóêö³ÿ ëàçåðíå îñàäæåííÿ bottom-up ~ âèñõ³äíå ïðîåêòóâàííÿ pyrolytic ~ ï³ðîë³òè÷íå îñàäæåííÿ bottom-up building-block ~ âèñõ³äíå serigraphic ~ òðàôàðåòíèé äðóê, ñ³òêîãðàô³ÿ ïðîåêòóâàííÿ íà îñíîâ³ ñòàíäàðòíèõ áëîê³â sputter ~ îñàäæåííÿ ìåòîäîì ðîçïèëþâàííÿ built-in-test ~ ïðîåêòóâàííÿ ç âáóäîâàíîþ òåñòîâîþ ä³àãíîñòèêîþ static ~ îñàäæåííÿ íà íåðóõîìó ïîâåðõíþ chip ~ 1. ïðîåêòóâàííÿ êðèñòàëà (²Ñ) 2. (íàïð. íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) ñòðóêòóðà êðèñòàëà (²Ñ) thin-film ~ îñàäæåííÿ òîíêèõ ïë³âîê circuit ~ 1. ïðîåêòóâàííÿ ñõåìîòåõí³êè 2. vacuum vapor ~ âàêóóìíå îñàäæåííÿ ç êîíñòðóêö³ÿ ñõåìè 3. ñõåìîòåõí³êà ïàðîâî¿ ôàçè computer-aided [computer-assisted] ~ vapor(-phase)~ îñàäæåííÿ ç ïàðîâî¿ ôàçè àâòîìàòèçîâàíå ïðîåêòóâàííÿ depth ãëèáèíà; òîâùèíà custom ~ 1. ðîçðîáêà çàìîâëåíèõ ïðèëàä³â diffusion ~ ãëèáèíà äèôó糿; ãëèáèíà 2. êîíñòðóêö³ÿ çàìîâëåíèõ ïðèëàä³â çàëÿãàííÿ äèôóç³éíî¿ îáëàñò³ damage-tolerant ~ â³äìîâîñò³éêà doping ~ ãëèáèíà ëåãóâàííÿ êîíñòðóêö³ÿ etch ~ ãëèáèíà òðàâëåííÿ detailed ~ 1. äåòàëüíå ïðîåêòóâàííÿ 2. junction ~ ãëèáèíà çàëÿãàííÿ ð-n-ïåðåõîäó ðîáî÷èé ïðîåêò kerf ~ ãëèáèíà ë³í³¿ ñêðàéáóâàííÿ device ~ ïðîåêòóâàííÿ êîìïîíåíò³â ²Ñ penetration ~ ãëèáèíà ïðîíèêíåííÿ discrete-circuit ~ ïðîåêòóâàííÿ ñõåìè íà derating: äèñêðåòíèõ êîìïîíåíòàõ component ~ ïîã³ðøåííÿ õàðàêòåðèñòèê dynamic ~ ïðîåêòóâàííÿ ñõåìè ç êîìïîíåíòó óðàõóâàííÿì ïåðåõ³äíèõ ïðîöåñ³â description: engineering ~ òåõí³÷íèé ïðîåêò behavioral ~ ïîâåä³íêîâèé îïèñ fault-tolerant ~ â³äìîâîñò³éêà êîíñòðóêö³ÿ design ~ ïðîåêòíèé îïèñ; îïèñ ïðîöåñó flat ~ çàãàëüíå ïðîåêòóâàííÿ ïðîåêòóâàííÿ flat logic ~ ÷èñòå ëîã³÷íå ïðîåêòóâàííÿ flat ~ áëîêîâèé îïèñ åëåìåíò³â íà ïëîùèí³, foundry ~ ïðîåêòóâàííÿ â êðåìí³ºâ³é ³ºðàðõ³÷íèé îïèñ ìàéñòåðí³ functional ~ ôóíêö³îíàëüíèé îïèñ front-end ~ 1. ðîçðîáêà âõ³äíèõ êàñêàä³â 2. hardware ~ îïèñ àïàðàòíèõ çàñîá³â êîíñòðóêö³ÿ âõ³äíîãî êàñêàäó hierarchical ~ ³ºðàðõ³÷íèé îïèñ functional ~ 1. ôóíêö³îíàëüíå ïðîåêòóâàííÿ high-level ~ âèñîêîð³âíåâèé îïèñ 2. ðîçðîáêà ôóíêö³îíàëüíî¿ ñõåìè logistical ~ ëîã³÷íèé îïèñ geometry ~ 1. ïðîåêòóâàííÿ ãåîìåò𳿠procedural ~ ïðîöåäóðíèé îïèñ; êîìàíäíèé ïðèëàä³â 2. òîïîëîã³÷íå ïðîåêòóâàííÿ îïèñ hierarchical ~ ³ºðàðõ³÷íå ïðîåêòóâàííÿ descriptor:
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dev high-level ~ ïðîåêòóâàííÿ (íà ð³âí³) àðõ³òåêòóðè, ïðîåêòóâàííÿ âåðõíüîãî ð³âíÿ (íàïð. ôóíêö³îíàëüíå ïðîåêòóâàííÿ ²Ñ) high-performance ~ êîíñòðóêö³ÿ âèñîêîÿê³ñíî¿ ²Ñ IC ~ 1. ïðîåêòóâàííÿ ²Ñ 2. êîíñòðóêö³ÿ ²Ñ in-house custom ~ 1. âëàñíà ðîçðîáêà ñïåö³àë³çîâàíèõ ²Ñ 2. âëàñíà êîíñòðóêö³ÿ ñïåö³àë³çîâàíèõ ²Ñ level-sensitive scan ~ ïðîåêòóâàííÿ ²Ñ ç âèêîðèñòàííÿì ïîñë³äîâíèõ ðåã³ñòðîâèõ ïåðåäà÷ logic ~ ëîã³÷íå ïðîåêòóâàííÿ, ïðîåêòóâàííÿ íà ð³âí³ ëîã³÷íèõ ñõåì manual ~ ðó÷íå ïðîåêòóâàííÿ mask ~ ðîçðîáêà ôîòîøàáëîíó modular ~ ìîäóëüíà êîíñòðóêö³ÿ multichip [multiple-chip] ~ 1. ïðîåêòóâàííÿ áàãàòîêðèñòàëüíèõ ²Ñ 2. áàãàòîêðèñòàëüíà êîíñòðóêö³ÿ; êîíñòðóêö³ÿ áàãàòîêðèñòàëüíèõ ²Ñ on-line ~ 1. áåçïîñåðåäíº ïðîåêòóâàííÿ 2. îïåðàòèâíå ïðîåêòóâàííÿ operational ~ ïðîåêòóâàííÿ íà ð³âí³ îïåðàö³¿; ôóíêö³îíàëüíà ðîçðîáêà option ~ ïðîåêòóâàííÿ ç âèáîðîì âàð³àíò³â package ~ êîíñòðóêö³ÿ êîðïóñó PC board ~ 1. ïðîåêòóâàííÿ äðóêîâàíî¿ ïëàòè 2. êîíñòðóêö³ÿ äðóêîâàíî¿ ïëàòè physical ~ ôèçèêî-òîïîëîã³÷íå ïðîåêòóâàííÿ, ïðîåêòóâàííÿ (äèôóç³éíîãî) ïðîô³ëþ (íàï³âïðîâ³äíèêîâî¿ ñòðóêòóðè) process ~ ïðîåêòóâàííÿ òåõíîëî㳿 âèãîòîâëåííÿ ïðèëàä³â random-logic ~ ïðîåêòóâàííÿ ç âèêîðèñòàííÿì äîâ³ëüíî¿ ëîã³êè regular-logic ~ ïðîåêòóâàííÿ ç âèêîðèñòàííÿì ðåãóëÿðíî¿ ëîã³êè scan path ~ ïðîåêòóâàííÿ ñêàíóâàííÿì øëÿõ³â (ïðè ïðîåêòóâàíí³ òîïîëî㳿) standard-cell ~ 1. ïðîåêòóâàííÿ ç âèêîðèñòàííÿì ñòàíäàðòíèõ åëåìåíò³â 2. êîíñòðóêö³ÿ íà îñíîâ³ ñòàíäàðòíèõ êîì³ðîê structured ~ ñòðóêòóðíå ïðîåêòóâàííÿ substrate ~ ñòðóêòóðà ï³äêëàäêè system-level ~ ïðîåêòóâàííÿ íà ñèñòåìíîìó ð³âí³ target ~ ö³ëüîâèé ïðîåêò
testing ~ ðîçðîáêà òåñòó (âêëþ÷àþ÷à ðîçðîáêó ïðîãðàì òåñòóâàííÿ, ãåíåðàö³þ â³äáðàêîâî÷íèõ ³ ä³àãíîñòè÷íèõ òåñò³â) top-down ~ íèçõ³äíå ïðîåêòóâàííÿ topological layout ~ òîïîëîã³÷íå ïðîåêòóâàííÿ (âêëþ÷àþ÷å ðîçì³ùåííÿ åëåìåíò³â íà êðèñòàë³ ³ ïðîâåäåííÿ ì³æç’ºäíàíü) transistor ~ ïðîåêòóâàííÿ íà ð³âí³ òðàíçèñòîð³â trial and error ~ ïðîåêòóâàííÿ ìåòîäîì ïðîá ³ ïîìèëîê worst-case ~ ïðîåêòóâàííÿ ïî ÿêíàéã³ðøîìó âàð³àíòó designer ïðîåêòóâàëüíèê; êîíñòðóêòîð; ðîçðîáíèê circuit ~ ñõåìîòåõí³ê system ~ ñèñòåìîòåõí³êà designics ïðîåêòîí³êà (ôîðìàëüíà òåîð³ÿ ïðîåêòóâàííÿ ²Ñ) desmearing î÷èùåííÿ (íàïð. âèäàëåííÿ ïàòüîê³â ñìîëè ï³ñëÿ ñâåðäëåííÿ îòâîð³â â äðóêîâàí³é ïëàò³) plasma ~ ïëàçìîâå î÷èùåííÿ desolder äåìîíòóâàòè; âèäàëÿòè ïðèï³é destaticization àíòèñòàòè÷íà îáðîáêà detail: circuit ~ ñõåìíèé åëåìåíò; ñõåìíèé êîìïîíåíò detection: crack ~ äåôåêòîñêîï³ÿ òð³ùèí defect ~ äåôåêòîñêîï³ÿ end-point ~ âèçíà÷åííÿ ê³íöÿ ïðîöåñó (íàïð. òðàâëåííÿ) fault ~ âèÿâëåííÿ íåñïðàâíîñòåé detector äåòåêòîð image ~ ôîðìóâà÷ â³äåîñèãíàë³â; äåòåêòîð çîáðàæåíü Josephson-effect [Josephson-junction] ~ äåòåêòîð íà åôåêò³ Äæîçåôñîíà leak ~ òå÷åèñêàòåëü, øóêà÷ âòðàò detrapping ãåíåðàö³ÿ ç ïàñòêè developer 1. ïðîÿâíèê (ôîòîðåçèñòó) 2. óñòàíîâêà äëÿ ïðîÿâëåííÿ aqueous ~ 1. âîäíî-ëóæíèé ïðîÿâíèê 2. óñòàíîâêà äëÿ ïðîÿâëåííÿ ó âîäíî-ëóæíîìó ïðîÿâíèêó photoresist ~ 1. ïðîÿâíèê ôîòîðåçèñòó 2. óñòàíîâêà äëÿ ïðîÿâó ôîòîðåçèñòó solvent ~ ïðîÿâíèê
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dev spray ~ óñòàíîâêà ñòðóìåíåâîãî ïðîÿâëåííÿ, óñòàíîâêà äëÿ ïðîÿâëåííÿ ìåòîäîì ðîçáðèçêóâàííÿ wafer ~ óñòàíîâêà äëÿ ïðîÿâëåííÿ ôîòîðåçèñòà íà íàï³âïðîâ³äíèêîâèõ ïëàñòèíàõ development 1. ðîçðîáêà; ïðîåêòóâàííÿ (äèâ. ò-æ design) 2. ïðîÿâëåííÿ (ôîòîðåçèñòà) bubble (-memory) ~ ðîçðîáêà ïàì’ÿò³ íà ÖÌÄ custom ~ ðîçðîáêà çàìîâëåíèõ ïðèëàä³â dry ~ ñóõå ïðîÿâëåííÿ immersion ~ ïðîÿâëåííÿ ìåòîäîì çàíóðåííÿ â ð³äêèé ïðîÿâíèê in-house CAD system ~ ðîçðîáêà ³íäèâ³äóàëüíî¿ [ñïåö³àë³çîâàíî¿ äëÿ äàíîãî ï³äïðèºìñòâà] ñèñòåìè àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ spray ~ ñòðóìåíåâèé ïðîÿâëåííÿ, ïðîÿâëåííÿ ìåòîäîì ðîçáðèçêóâàííÿ static-charge ~ âèíèêíåííÿ åëåêòðîñòàòè÷íèõ çàðÿä³â wet ~ ïðîÿâëåííÿ ð³äêèìè õ³ì³÷íèìè ðåàêòèâàìè device 1. ïðèëàä (íàïð. ²Ñ, òðàíçèñòîð, ä³îä); êîìïîíåíò; åëåìåíò 2. ïðèñòð³é acoustic-wave ~ ïðèëàä íà àêóñòè÷íèõ õâèëÿõ active ~ àêòèâíèé ïðèëàä; àêòèâíèé êîìïîíåíò add-on ~ íàâ³ñíèé êîìïîíåíò analog ~ àíàëîãîâà ²Ñ array ~ ìàòðè÷íà ²Ñ attached ~ íàâ³ñíèé êîìïîíåíò backup ~ ðåçåðâíèé ïðèñòð³é beam-lead(ed)~ ïðèëàä ç áàëêîâèìè âèâîäàìè bipolar ~ á³ïîëÿðíèé ïðèëàä bipolar-MOS ~ ²Ñ íà á³ïîëÿðíèõ ³ ÌÎÍòðàíçèñòîðàõ blown-fuse ~ ²Ñ ç ïëàâêèìè ïåðåìè÷êàìè (íàïð. ÏËÌ) bubble-(domain) ~ ïðèñòð³é íà ÖÌÄ bucket-brigade ~ ïðèëàä òèïó «ïîæåæíèé ëàíöþæîê» bulk àñoustic-wave ~ ïðèëàä íà îá’ºìíèõ àêóñòè÷íèõ õâèëÿõ bulk-channel carrier-transfer ~ ÏÏÇ ç îá’ºìíèì êàíàëîì bulk-effect ~ ïðèëàä íà îá’ºìíîìó åôåêò³
carrier-transfer ~ ïðèëàä ç ïåðåíåñåííÿì çàðÿäó, ÏÏÇ charge-coupled ~ ïðèëàä ³ç çàðÿäíèì çâ’ÿçêîì, ÏÇÇ (äèâ. ò-æ. CCD) charge-domain ~ ïðèëàä ³ç çàðÿäíèìè äîìåíàìè (òèï ÏÇÇ) charge-injection ~ ïðèëàä ç ³íæåêö³ºþ çàðÿäó, ÏDz charge-priming ~ ïðèëàä ç ï³äêà÷êîþ çàðÿäó charge-transfer ~ ïðèëàä ç ïåðåíåñåííÿì çàðÿäó, ÏÏÇ chip-and-wire ~ ïðèëàä ç äðîòÿíèì ìîíòàæåì CMOS ~ 1. ²Ñ íà êîìïëåìåíòàðíèõ ÌÎÍòðàíçèñòîðàõ, ÊÌÎÍ ²Ñ 2. êîìïëåìåíòàðíèé ÌÎÍ-òðàíçèñòîð, ÊÌÎÍ-òðàíçèñòîð CMOS/SOS ~ 1. ²Ñ íà êîìïëåìåíòàðíèõ ÌÎÍ-òðàíçèñòîðàõ ç ÊÍÑ-ñòðóêòóðîþ, ÊÌÎÍ ²Ñ ç ÊÍÑ-ñòðóêòóðîþ 2. ÊÌÎÍòðàíçèñòîð ç ÊÍÑ-ñòðóêòóðîþ compound-semiconductor ~ ïðèëàä íà îñíîâ³ íàï³âïðîâ³äíèêîâî¿ ñïîëóêè contiguous-disk ~ ïðèñòð³é íà ÖÌÄ ç ñõåìîþ ïðîñóâàííÿ íà äîòè÷íèõ äèñêàõ controlled surface ~ (íàï³âïðîâ³äíèêîâèé) ïðèëàä ç êåðîâàíèìè ïîâåðõíåâèìè âëàñòèâîñòÿìè custom(-designed) ~ çàìîâëåíèé ïðèëàä dense ~ ²Ñ ç âèñîêîþ ãóñòèíîþ óïàêîâêè depletion(-mode)~ ïðèëàä, ùî ïðàöþº â ðåæèì³ çá³äíåííÿ dielectric isolation ~ ²Ñ ç ä³åëåêòðè÷íîþ ³çîëÿö³ºþ diffused ~ äèôóç³éíèé êîìïîíåíò discrete ~ äèñêðåòíèé êîìïîíåíò double-diffused MOS ~ ÌÎÍ ²Ñ, âèãîòîâëåíà ïîäâ³éíîþ äèôó糺þ elastic-surface-wave ~ ïðèëàä íà ïðóæíèõ [àêóñòè÷íèõ] ïîâåðõíåâèõ õâèëÿõ electrooptic ~ åëåêòðîîïòè÷íèé ïðèëàä elementary ~ äèñêðåòíèé êîìïîíåíò enchancement(-mode) ~ ïðèëàä, ùî ïðàöþº â ðåæèì³ çáàãà÷åííÿ end-use ~ êðàéîâèé ïðèñòð³é epiplanar ~ ïëàíàðíî-åï³òàêñ³àëüíèé ïðèëàä epitaxial ~ åï³òàêñ³àëüíèé ïðèëàä FAMOS ~ ëàâèííî-³íæåêö³éíèé ÌÎÍïðèëàä ç ïëàâàþ÷èì çàòâîðîì
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dev field-effect ~ 1. ²Ñ íà ïîëüîâèõ òðàíçèñòîðàõ 2. ïîëüîâèé òðàíçèñòîð (äèâ. ò-æ FET) field-programmable ~ ²Ñ, ïðîãðàìîâàíà êîðèñòóâà÷åì FIMOS ~ ³îí³çàö³éíî-³íæåêö³éíèé ÌÎÍïðèëàä ç ïëàâàþ÷èì çàòâîðîì functional ~ ôóíêö³îíàëüíèé ïðèñòð³é graded-gap (semiconductor) ~ íàï³âïðîâ³äíèêîâèé ïðèëàä ç ïëàâíîçì³ííîþ øèðèíîþ çàáîðîíåíî¿ çîíè Gurm(-effect) ~ ïðèëàä (íà åôåêò³) Ãàííà Hall(-effect)~ ïðèëàä (íà åôåêò³) Õîëëà hard(ened)~ ðàä³àö³éíîñò³éêèé ïðèëàä heteroepitaxial ~ ãåòåðîåï³òàêñ³àëüíèé ïðèëàä heterojunction ~ íàï³âïðîâ³äíèêîâèé ïðèëàä íà ãåòåðîïåðåõîäàõ, ãåòåðîïåðåõ³äíèé ïðèëàä high-gain ~ ïðèëàä ç âèñîêèì êîåô³ö³ºíòîì ï³äñèëåííÿ high-immunity noise ~ ïåðåøêîäîñò³éêèé ïðèëàä high-technology ~ ïðèëàä, âèãîòîâëåíèé çà ïðîãðåñèâíîþ òåõíîëî㳺þ high-threshold ~ ïðèëàä ç âèñîêîþ ïîðîãîâîþ íàïðóãîþ homojunction ~ íàï³âïðîâ³äíèêîâèé ïðèëàä íà ãîìîïåðåõîäàõ, ãîìîïåðåõ³äíèé ïðèëàä hybrid high-power ~ ìîãóòíÿ Ã²Ñ identification ~ ïðèñòð³é äëÿ ïðî÷èòóâàííÿ ìàðê³ðîâêè I2L ~ ëîã³÷íà ²Ñ ç èíæåêö³éíèì æèâëåííÿì, ²Ñ íà È2Ë image [imaging] ~ ôîðìóâà÷ â³äåîñèãíàë³â, ôîðìóâà÷ (ñèãíàë³â) çîáðàæåíü IMPATT ~ ëàâèííî-ïðîë³òíèé ïðèëàä implanted ~ ³îííî-³ìïëàíòîâàíèé ïðèëàä integrated-optic ~ ïðèñòð³é ³íòåãðàëüíî¿ îïòèêè integrated semiconductor ~ 1. íàï³âïðîâ³äíèêîâà ²Ñ 2. ³íòåãðàëüíèé íàï³âïðîâ³äíèêîâèé êîìïîíåíò integration ~ ³íòåãðàëüíà ñõåìà, ²Ñ (äèâ. òæ chip, circuit, integration) interdigitated ~ ïðèëàä ³ç çóñòð³÷íîãðåá³í÷àñòîþ ñòðóêòóðîþ interface ~ 1. ïðèñòð³é ñïðÿæåííÿ, ³íòåðôåéñ 2. ³íòåðôåéñíà ²Ñ Josephson(-junction)~ ïðèëàä íà ïåðåõîäàõ Äæîçåôñîíà
Josephson logic ~ ëîã³÷íà ²Ñ íà ïåðåõîäàõ Äæîçåôñîíà junction-isolated ~ ²Ñ ç ³çîëÿö³ºþ ð-nïåðåõîäàìè large-scale integrated [large-scale integration] ~ ²Ñ ç âèñîêèì ñòóïåíåì ³íòåãðàö³¿, âåëèêà ²Ñ, Â²Ñ (äèâ. ò-æ chip, circuit, integration) latch-up free CMOS ~ ÊÌÎÍ ²Ñ áåç (åôåêòó) çàùèïóâàííÿ leaded ~ ïðèëàä ç (ãíó÷êèìè) âèâîäàìè leadless inverted ~ ²Ñ â áåçâèâ³äíîìó êðèñòàëîíîñ³¿ light-wave ~ îïòîåëåêòðîííèé ïðèëàä locked-in ~ ñèíõðîí³çîâàíèé ïðèñòð³é logic array ~ ëîã³÷íà ìàòðè÷íà ²Ñ low-power Schottky ~ ìàëîïîòóæíà ²Ñ íà ÒÒË ç ä³îäàìè Øîòê³ magnetostatic-wave ~ ïðèëàä íà ìàãí³òîñòàòè÷íèõ õâèëÿõ majority-carrier ~ (íàï³âïðîâ³äíèêîâèé) ïðèëàä íà îñíîâíèõ íîñ³ÿõ çàðÿäó mask-programmable ~ ²Ñ ç ìàñêîâèì ïðîãðàìóâàííÿì metal-masked ~ ²Ñ, âèãîòîâëåíà ³ç çàñòîñóâàííÿì ìåòàë³çîâàíèõ ôîòîøàáëîí³â metal-semiconductor ~ ïðèëàä ç ïåðåõîäîì ìåòàë–íàï³âïðîâ³äíèê microdiscrete ~ äèñêðåòíèé ì³êðîêîìïîíåíò microelectronic ~ ì³êðîåëåêòðîííèé ïðèñòð³é minority-carrier ~ (íàï³âïðîâ³äíèêîâèé) ïðèëàä íà íåîñíîâíèõ íîñ³ÿõ MIS(-type) ~ 1. ²Ñ íà ÌÄÏ-òðàíçèñòîðàõ 2. ÌÄÏ-òðàíç³-ñòîð mixed(-process) ~ (ë³í³éíà) ²Ñ, âèãîòîâëåíà çà êîìá³íîâàíîþ òåõíîëî㳺þ (òàêà, ùî ì³ñòèòü á³ïîëÿðí³ ³ ïîëüîâ³ òðàíçèñòîðè) molecular-beam epitaxy-based ~ ïðèëàä, âèãîòîâëåíèé ìåòîäîì ìîëåêóëÿðíîïó÷êîâî¿ åï³òàêñ³¿ monolithic ~ ìîíîë³òíà ²Ñ; íàï³âïðîâ³äíèêîâà ²Ñ MOS ~ 1. ²Ñ íà ÌÎÍ-òðàíçèñòîðàõ, ÌÎÍ ²Ñ 2. ÌÎÍ-òðàíçèñòîð MTL ~ ëîã³÷íà ²Ñ ç ³íæåêö³éíèì æèâëåííÿì, ²Ñ íà òðàíçèñòîðàõ ç ñóì³ùåíèìè îáëàñòÿìè, ²Ñ íà È2Ë
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dev multilayered [multilevel] ~ ²Ñ ç áàãàòîð³âíåâîþ [áàãàòîøàðîâî¿] ìåòàë³çàö³ºþ n-channel (MOS) ~ n-êàíàëüíèé ÌÎÍïðèëàä negative-resistance ~ ïðèëàä ç íåãàòèâíèì îïîðîì non-CPU ~ ïåðèôåð³éíèé ìîäóëü â ì³êðîïðîöåñîðí³é Â²Ñ n–p–n ~ n–p–n-òðàíçèñòîð off-chip ~ íàâ³ñíèé ïðèëàä on-chip ~ ïðèëàä, ðîçì³ùåíèé íà îäíîìó êðèñòàë³ ç ì³êðîïðîöåñîðîì optocoupler semiconductor ~ íàï³âïðîâ³äíèêîâèé ïðèëàä ç îïòðîííèì çâ’ÿçêîì optocoupling ~ îïòðîí, îïòîïàðà passive ~ ïàñèâíèé ïðèëàä; ïàñèâíèé êîìïîíåíò p-channel (MOS) ~ ð-êàíàëüíèé ÌÎÍïðèëàä peripheral ~ 1. ïåðèôåð³éíèé ïðèñòð³é 2. ïåðèôåð³éíà ²Ñ permalloy bubble ~ ïðèñòð³é íà ÖÌÄ ç ñõåìîþ ïðîñóâàííÿ íà ïåðìàëîºâèõ àïë³êàö³ÿõ permalloy T-bar ~ ïðèñòð³é íà ÖÌÄ ç ñõåìîþ ïðîñóâàííÿ íà ïåðìàëîºâèõ Òïîä³áíèõ àïë³êàö³ÿõ photo-coupled semiconductor ~ íàï³âïðîâ³äíèêîâèé ïðèëàä ç îïòðîííèì çâ’ÿçêîì photosensitive ~ ôîòî÷óòëèâèé [ñâ³òëî÷óòëèâèé] ïðèëàä piezoelectric ~ ï’ºçîåëåêòðè÷íèé ïðèëàä piggyback ~ ²Ñ, çìîíòîâàíà íà ³íøîìó ïðèëàä³ (äëÿ åêîíî쳿 ïëîù³ äðóêîâàíî¿ ïëàò³) planar ~ ïðèëàä, âèãîòîâëåíèé çà ïëàíàðíîþ òåõíîëî㳺þ plotting ~ ãðàô³÷íèé ïðèñòð³é; êîîðäèíàòîãðàô plug-in ~ ïðèëàä ç øòèðüêîâûìè âèâîäàìè p-n-p ~ p–n–p-òðàíçèñòîð positioning ~ ïîçèö³îíóþ÷èé ïðèñòð³é printing ~ óñòàíîâêà ë³òîãðàô³¿; óñòàíîâêà òðàôàðåòíîãî äðóêó programmable (logic-array) ~ 1. ïðîãðàìîâàíà ëîã³÷íà ìàòðèöÿ, ÏËÌ 2. ²Ñ íà îñíîâ³ ÏËÌ
quantum ~ êâàíòîâèé ïðèëàä, ïðèëàä íà îñíîâ³ êâàíòîâèõ åôåêò³â quantum-well ~ íàï³âïðîâ³äíèêîâèé ïðèëàä ç ïîòåíö³àëüéíèìè ÿìàìè redundancy ~ ïðèëàä ç ðåçåðâóâàííÿì resin-molded ~ ïðèëàä â ïëàñòìàñîâîìó êîðïóñ³ SAW ~ ïðèëàä íà ïîâåðõíåâèõ àêóñòè÷íèõ õâèëÿõ, ïðèëàä íà ÏÀÕ SAW delay ~ ë³í³ÿ çàòðèìêè íà ÏÀÕ scaled(-down)~ 1. ìàñøòàáîâàíà ²Ñ 2. ïðîïîðö³éíî çìåíøåíèé òðàíçèñòîð Schottky(-barrier)~ ïðèëàä ç áàð’ºðîì Øîòê³ (íàïð. ä³îä Øoòê³) second-source ~ ïðèëàä, âèïóùåíèé ï³äïðèºìñòâîì çà ë³öåí糺þ; ïðèëàä ³íøîãî ïîñòà÷àëüíèêà self-aligned semiconductor ~ íàï³âïðîâ³äíèêîâèé ïðèëàä ç ñàìîñóì³ùåíèìè îáëàñòÿìè semiconductor-on-sapphire ïðèëàä ³ç ñòðóêòóðîþ òèïó «íàï³âïðîâ³äíèê íà ñàïô³ð³» silicon-on-dielectric [silicon-on-insulator] ~ ïðèëàä ³ç ñòðóêòóðîþ òèïó «êðåìí³é íà ä³åëåêòðèö³» silicon-on-sapphire ~ ïðèëàä ³ç ñòðóêòóðîþ òèïó «êðåìí³é íà ñàïô³ð³» single ~ äèñêðåòíèé êîìïîíåíò single-crystal ~ ïðèëàä íà îñíîâ³ ìîíîêðèñòàë³÷íîãî íàï³âïðîâ³äíèêà slow ~ ïðèëàä ç íèçüêîþ øâèäêî䳺þ SLS ~ ïðèëàä íà îñíîâ³ íàäãðàòêè ç íàïðóæåíèìè øàðàìè small-geometry ~ ïðèëàä ç åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â solder-evacuator ~ ïðèñòð³é äëÿ â³äñìîêòóâàííÿ ïðèïîþ SOS/MOS ~ 1. ²Ñ íà ÌÎÍ-òðàíçèñòîðàõ ç ÊÍÑ-ñòðóêòóðîþ, ÌÎÍ ²Ñ ç ÊÍÑñòðóêòóðîþ 2. ÌÎÍ-òðàíçèñòîð ç ÊÍÑñòðóêòóðîþ stacked semiconductor ~ áàãàòîð³âíåâèé íàï³âïðîâ³äíèêîâèé ïðèëàä static-sensitive ~ (íàï³âïðîâ³äíèêîâèé) ïðèëàä, ÷óòëèâèé äî ñòàòè÷íî¿ åëåêòðèêè stripeline ~ ñìóæêîâèé ïðèëàä, ïðèëàä ç ñìóæêîâîþ ñòðóêòóðîþ submicron-scale MOS ~ ÌÎÍ-òðàíçèñòîð ç ñóáì³êðîííèìè ðîçì³ðàìè
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dia superconducting Josephson-junction ~ ïðèñòð³é íà ïåðåõîäàõ Äæîçåôñîíà superconducting quantum interference ~ íàäïðîâ³äíèé êâàíòîâèé ³íòåðôåðåíö³éíèé äàò÷èê, ÍÊÂ²Ä superconductive quantum interferometric ~ íàäïðîâ³äíèé êâàíòîâèé ³íòåðôåðîìåòð super-lattice functional ~ ôóíêö³îíàëüíèé ïðèëàä íà îñíîâ³ íàäãðàòêè superstructure ~ ñóïåðñòðóêòóðíèé ïðèëàä, ïðèëàä íà îñíîâ³ íàäãðàòêè surface-acoustic-wave ~ ïðèëàä íà ÏÀÕ surface charge-transfer ~ ÏÏÇ ç ïîâåðõíåâîþ ñòðóêòóðîþ surface-mounted ~ ïðèëàä äëÿ ïîâåðõíåâîãî ìîíòàæó switching ~ ïåðåìèêàþ÷èé [ïåðåìèêà÷] åëåìåíò TAB ~ ²Ñ, âèãîòîâëåíà ìåòîäîì àâòîìàòèçîâàíîãî ìîíòàæó êðèñòàë³â íà ñòð³÷êîâîìó íîñ³¿ thermocompression bonded ~ ïðèëàä ç òåðìîêîìïðåñ³éíèìè äðîòÿíèìè âèâîäàìè thick-film ~ òîâñòîïë³âêîâèé êîìïîíåíò thin-film ~ òîíêîïë³âêîâèé êîìïîíåíò transcalent ~ íàï³âïðîâ³äíèêîâèé ïðèëàä ç òåïëîâèìè òðóáêàìè transferred-electron ~ ïðèëàä ç ïåðåíåñåííÿì åëåêòðîí³â; ïðèëàä (íà åôåêò³) Ãàííà transil-time-negative-resistance ~ ëàâèííîïðîë³òíèé ïðèëàä ç íåãàòèâíèì îïîðîì trench isolated ~ ²Ñ ç ³çîëþþ÷èìè êàíàâêàìè tunnel (-åffect) ~ òóíåëüíèé ïðèëàä two-level polysilicon MOS ~ ÌÎÍ ²Ñ ç äâîìà øàðàìè ïîë³êðèñòàë³÷íîãî êðåìí³þ ULA ~ íåñêîìóòîâàíà ëîã³÷íà ìàòðèöÿ ultrafine-scale ~ ïðèëàä ç ñóáì³êðîííèìè ðîçì³ðàìè ultra-large-scale integrated ~ ²Ñ ³ç ñòóïåíåì ³íòåãðàö³¿ âèùå íàäâèñîêîþ, óëüòðàâåëèêà ²Ñ, ÓÂ²Ñ ultra-submicron ~ óëüòðàñóá-ì³êðîííèé ïðèëàä (ç ì³í³ìàëüíèìè ðîçì³ðàìè ìåíøå 0,1—0,2 ìêì) uncased ~ áåçêîðïóñíèé ïðèëàä vertical-junction ~ ïðèëàä ç âåðòèêàëüíèìè ïåðåõîäàìè
very large-scale integrated-circuit [very large-scale integration] ~ íàäâåëèêà ²Ñ, ÍÂ²Ñ V-groove (MOS) ~ ÌÎÍ-òðàíçèñòîð ç Vïîä³áíèìè êàíàâêàìè wafer-printing ~ óñòàíîâêà ë³òîãðàô³¿ devitrification ðîçñêëóâàííÿ; êðèñòàë³çàö³ÿ ñêëà dewetting óòâîðåííÿ íåçìî÷óâàíèõ (ïðèïîºì) ä³ëÿíîê diagnosis: multifault ~ ä³àãíîñòèêà êðàòíèõ íåñïðàâíîñòåé post-test ~ àïîñòåð³îðíà ä³àãíîñòèêà diagnostics: contactless ~ áåçêîíòàêòíà [íåðóéí³âíà] ä³àãíîñòèêà laser ~ ëàçåðíà ä³àãíîñòèêà light-scattering ~ ä³àãíîñòèêà ðîçñ³ÿíèì ñâ³òëîì Raman ~ ä³àãíîñòèêà ìåòîäîì ðàìàíîâñüêèõ ñïåêòð³â diagram ä³àãðàìà; ñõåìà; ãðàô³ê binary decision ~ äâ³éêîâà ä³àãðàìà ð³øåíü (ðîçâ’ÿçê³â); á³íàðíå äåðåâî ð³øåíü (ðîçâ’ÿçê³â) block ~ áëîê-ñõåìà; ñòðóêòóðíà ñõåìà block integration ~ ä³àãðàìà âçàºìî䳿 áëîê³â (ïðè ïðîåêòóâàíí³ çàìîâëåíèõ ²Ñ) circuit ~ ïðèíöèïîâà (åëåêòðè÷íà) ñõåìà connection ~ ñõåìà åëåêòðè÷íèõ ç’ºäíàíü current-voltage ~ âîëüò-àìïåðíà õàðàêòåðèñòèêà, ÂÀÕ flow ~ ñõåìà òåõíîëîã³÷íîãî ïðîöåñó functional ~ ôóíêö³îíàëüíà ñõåìà interconnection ~ ñõåìà ì³æç’ºäíàíü logic ~ ëîã³÷íà ñõåìà operational sequence ~ ä³àãðàìà ïîñë³äîâíîñò³ îïåðàö³é phase ~ ôàçîâà ä³àãðàìà, ä³àãðàìà ñòàí³â schematic (circuit) ~ ïðèíöèïîâà ñõåìà; ñõåìàòè÷íå ïðåäñòàâëåííÿ state ~ ä³àãðàìà ñòàí³â, ôàçîâà ä³àãðàìà stick ~ ñòåêîâà ä³àãðàìà timing ~ òèì÷àñîâà ä³àãðàìà truth ~ òàáëèöÿ ³ñòèííîñò³ (äëÿ ëîã³÷íèõ ñõåì) wiring ~ 1. ìîíòàæíà ñõåìà; ñõåìà ì³æç’ºäíàíü 2. ïðèíöèïîâà (åëåêòðè÷íà) ñõåìà
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dif diaphragm: äîì³øêà prestretched ~ íàòÿãíóòà ä³àôðàãìà fast ~ äèôóçàíò ç âèñîêèì êîåô³ö³ºíòîì resilient ~ ãíó÷êà ä³àôðàãìà äèôó糿 dice 1. êðèñòàëè (²Ñ) 2. ðîçä³ëÿòè low ~ äèôóçàíò ç íèçüêèì êîåô³ö³ºíòîì íàï³âïðîâ³äíèêîâó ïëàñòèíó íà êðèñòàëè äèôó糿 dicer óñòàíîâêà äëÿ ðîçä³ëåííÿ diffusion 1. äèôóç³ÿ 2. ð³äê. äèôóç³éíà îáëàñòü íàï³âïðîâ³äíèêîâèõ ïëàñòèí íà êðèñòàëè; à ~ from an infinite source äèôóç³ÿ ç óñòàíîâêà äëÿ ðîçð³çàííÿ êåðàì³÷íî¿ ïëàò³ íåñê³í÷åííîãî [íåîáìåæåíîãî] äæåðåëà; ~ íà îêðåì³ ï³äêëàäêè (íàïð. äëÿ òÑ) from à planar source äèôóç³ÿ ç îáìåæåíîãî dicing: äæåðåëà laser ~ ëàçåðíå ð³çàííÿ ampoule ~ äèôóç³ÿ ñïîñîáîì çàêðèòî¿ òðóáè dictionary: back ~ çâîðîòíà äèôóç³ÿ, äèôóç³ÿ ç îá’ºìó detection ~ ñëîâíèê âèÿâëåííÿ (ï³äêëàäêè) íåñïðàâíîñòåé Â²Ñ base ~ áàçîâà äèôóç³ÿ, äèôóç³ÿ äëÿ location ~ ñëîâíèê ïîøóêó íåñïðàâíîñòåé ôîðìóâàííÿ áàçè (â ²Ñ), ä³àãíîñòè÷íèé ñëîâíèê base-and-resistor ~ äèôóç³ÿ äëÿ ôîðìóâàííÿ die êðèñòàë (²Ñ) à ~on-tape êðèñòàë ²Ñ, áàçè ³ ðåçèñòîðà çìîíòîâàíèé íà ñòð³÷êîâîìó íîñ³¿ blanket ~ ñóö³ëüíà äèôóç³ÿ uncommitted ~ íåñêîìóòîâàíèé êðèñòàë; box ~ äèôóç³ÿ ç îáìåæåíîãî îá’ºìó áàçîâèé ìàòðè÷íèé êðèñòàë, ÁÌÊ (ï³äêëàäêè) dielectric ä³åëåêòðèê B&R ~ äèâ. base-and-resistor diffusion gate ~ ä³åëåêòðèê ï³äçàòâîðà channel ~ äèôóç³ÿ äëÿ ôîðìóâàííÿ êàíàëó high-integrity ~ ä³åëåêòðèê âèñîêî¿ ì³öíîñò³ (ïîëüîâîãî òðàíçèñòîðà) interlayer ~ ä³åëåêòðèê äëÿ âíóòð³øí³õ closed-tube ~ äèôóç³ÿ ñïîñîáîì çàêðèòî¿ ³çîëþþ÷èõ øàð³â (íàïð. â áàãàòîøàðîâ³é òðóáè äðóêîâàí³é ïëàò³) collector reach-through ~ äèôóç³ÿ äëÿ layered ~ øàðóâàòèé [áàãàòîøàðîâèé] ôîðìóâàííÿ ñóö³ëüíî¿ îáëàñò³ êîëåêòîðà ä³åëåêòðèê contact ~ äèôóç³ÿ äëÿ ôîðìóâàííÿ êîíòàêò³â thick-film ~ ä³åëåêòðèê äëÿ òîâñòîïë³âêîâèõ cross ~ ñòð³÷íà äèôóç³ÿ ñòðóêòóð doped-polysilicon ~ äèôóç³ÿ ç ëåãîâàíîãî diffraction: ïîë³êðèñòàë³÷íîãî êðåìí³þ convergent beam-electron äèôðàêö³ÿ double ~ ïîäâ³éíà [äâîêðàòíà] äèôóç³ÿ åëåêòðîííîãî ïó÷êà, ùî ñõîäèòüñÿ drain and source ~ äèôóç³ÿ äëÿ ôîðìóâàííÿ electron ~ äèôðàêö³ÿ åëåêòðîí³â ñòîêó ³ âèòîêó (ïîëüîâîãî òðàíçèñòîðà) Frensel ~ äèôðàêö³ÿ Ôðåíåëÿ, ôðåíåë³âñüêà drive-in ~ ðîçã³í äîì³øêè (äðóãà ñòàä³ÿ äèôðàêö³ÿ äâîõñòàä³éíî¿ äèôó糿) low-energy electron ~ äèôðàêö³ÿ ïîâ³ëüíèõ enhanced ~ ïðèñêîðåíà [ñòèìóëþþ÷à] åëåêòðîí³â, äèôðàêö³ÿ åëåêòðîí³â íèçüêî¿ äèôóç³ÿ åíåð㳿 error-function ~ äèôóç³ÿ â³äïîâ³äíî äî reflection high-energy electron ~ äèôðàêö³ÿ ôóíêö³¿ äîïîâíåííÿ ³íòåãðàëà ïîìèëîê äî â³äîáðàæåíèõ øâèäêèõ åëåêòðîí³â, 1 äèôðàêö³ÿ â³äîáðàæåíèõ åëåêòðîí³â âèñîêî¿ floating ~ ïëàâàþ÷à äèôóç³éíà îáëàñòü åíåð㳿 gaseous [gas-phase, gas-source] ~ äèôóç³ÿ ç ãàçîâî¿ ôàçè X-ray ~ ðåíòãåí³âñüêà äèôðàêö³ÿ guarding ~ äèôóç³ÿ äëÿ ôîðìóâàííÿ X-ray total reflective Bragg ~ áðåã³âñüêà îõîðîííèõ ê³ëåöü, îõîðîííà äèôóç³ÿ äèôðàêö³ÿ ðåíòãåí³âñüêîãî ïðîì³ííÿ ïðè in ~ ïðÿìà äèôóç³ÿ, äèôóç³ÿ âñåðåäèíó ïîâíîìó â³äáèòò³ îá’ºìó (ï³äêëàäêè) diffractometer: inlerfacial ~ äèôóç³ÿ ÷åðåç ìåæó ðîçä³ëó X-ray ~ ðåíòãåí³âñüêèé äèôðàêòîìåòð diffusant, diffuser äèôóçàíò, äèôóíäóþ÷à
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dio interstitial ~ äèôóç³ÿ ïî ì³æâóçëàõ, dilution ðîçáàâëåííÿ; ðîçð³äæåííÿ ì³æâóçëîâà äèôóç³ÿ dimension ðîçì³ð laser-assisted [laser-enhanced] ~ ëàçåðíîcritical ~ êðèòè÷íèé ðîçì³ð (íàïð. ñòèìóëþþ÷à äèôóç³ÿ ì³í³ìàëüíèé ðîçì³ð åëåìåíòó) lateral ~ á³÷íà [ãîðèçîíòàëüíà] äèôóç³ÿ depth ~s âåðòèêàëüí³ ðîçì³ðè liquid-phase ~ äèôóç³ÿ ç ð³äêî¿ ôàçè lateral ~s ãîðèçîíòàëüí³ ðîçì³ðè masked ~ äèôóç³ÿ ç âèêîðèñòàííÿì ìàñêè overall ~s ãàáàðèòí³ ðîçì³ðè multiple ~ áàãàòîêðàòíà äèôóç³ÿ submicrometer ~ ñóáì³êðîííèé ðîçì³ð n-type ~ 1. äèôóç³ÿ äîíîðíî¿ äîì³øêè 2. diode ä³îä äèôóç³éíà îáëàñòü n-òèïó abrupt-junction ~ ä³îä ç ð³çêèì ïåðåõîäîì one-step ~ îäíîñòàä³éíà äèôóç³ÿ avalanche ~ 1. ëàâèííèé ä³îä 2. ëàâèííîopen-tube ~ äèôóç³ÿ ñïîñîáîì â³äêðèòî¿ ïðîë³òíèé ä³îä, ËÏÄ òðóáè avalanche-injection ~ ä³îä ç ëàâèííîþ out ~ çâîðîòíà äèôóç³ÿ, äèôóç³ÿ ç îá’ºìó ³íæåêö³ºþ, ëàâèííî-³íæåêö³éíèé ä³îä (ï³äêëàäêè) avalanche-transit-time ~ ëàâèííîoxidation-enhanced ~ äèôóç³ÿ, ïðèñêîðåíà ïðîë³òíèé ä³îä, ËÏÄ îêñèäóâàííÿì êðåìí³þ back-biased ~ îáåðíåíî-çì³ùåíèé ä³îä oxide-masked ~ äèôóç³ÿ ç âèêîðèñòàííÿì BARITT [barrier-injection and transitîêñèäíî¿ ìàñêè time] ~ ³íæåêö³éíî-ïðîë³òíèé ä³îä pipe ~ äèôóç³ÿ óçäîâæ ë³í³é äèñëîêàö³é base-emitter ~ (³íòåãðàëüíèé) ä³îä íà îñíîâ³ planar ~ äèôóç³ÿ äëÿ ôîðìóâàííÿ åì³òåðíîãî ïåðåõîäó ïëàíàðíîãî íàï³âïðîâ³äíèêîâîãî ïðèëàäó buried Zener ~ ñòàá³ë³òðîí ç ïîãëèáëåíèì predeposition ~ çàãàíÿííÿ äîì³øêè (ïåðøà ïåðåõîäîì ñòàä³ÿ äâîõñòàä³éíî¿ äèôó糿) CATT ~ äèâ. controlled avalanche-transitproton-enhanced ~ äèôóç³ÿ, ïðèñêîðåíà time diode ïðîòîíàìè charge-storage ~ ä³îä ç íàêîïè÷åííÿì p-type ~ 1. äèôóç³ÿ àêöåïòîðíî¿ äîì³øêè 2. çàðÿäó, ÄÍÇ äèôóç³éíà îáëàñòü ð-òèïó chip ~ áåçêîðïóñíèé ä³îä selective ~ âèáîð÷à äèôóç³ÿ clamp(ing) ~ ô³êñóþ÷èé [äåìïôóþ÷èé] ä³îä separation ~ ðîçä³ëîâà [³çîëþþ÷à] äèôóç³ÿ collector-base ~ (³íòåãðàëüíèé) ä³îä íà shallow ~ 1. ì³ëêà [íåãëèáîêà] äèôóç³ÿ 2. îñíîâ³ ïåðåõîäó êîëåêòîðà ì³ëêà äèôóç³éíà îáëàñòü controlled avalanche-transit-time ~ sideways ~ á³÷íà [ãîðèçîíòàëüíà] äèôóç³ÿ êåðîâàíèé ëàâèííî-ïðîë³òíèé ä³îä single ~ îäíîêðàòíà äèôóç³ÿ deep ~ ãëèáîêèé ä³îä (ñôîðìîâàíèé solid(-state) ~ äèôóç³ÿ ç òâåðäîãî ò³ëà ìåòîäîì çîííî¿ ïëàâêè ç òåìïåðàòóðíèì substitutional ~ äèôóç³ÿ ïî âàêàíòíèõ ãðà䳺íòîì) âóçëàõ, äèôóç³ÿ ïî âàêàíñ³ÿõ double-diffused ~ äâîõäèôóç³éíèé ä³îä emitter-base ~ (³íòåãðàëüíèé) ä³îä íà îñíîâ³ substrate ~ äèôóç³ÿ (äîì³øêè) â ï³äêëàäêó ïåðåõîäó åì³òåð — áàçà tail ~ õâ³ñò äèôó糿 emitting ~ ñâ³òëîä³îä, vapor(-phase)~ äèôóç³ÿ ç ïàðîâî¿ ôàçè ñâ³òëîâèïðîì³íþþ÷èé ä³îä, ÑÂÄ diffusivity êîåô³ö³ºíò äèôó糿 Esaki ~ òóíåëüíèé ä³îä digitize âèçíà÷àòè êîîðäèíàòè òî÷îê íà gold-barrier Schottky ~ ä³îä Øîòê³ ç òîïîëî㳿 ìàñîê ïåðåõîäîì çîëîòî–íàï³âïðîâ³äíèê digitizer êîäóâàëüíèê ãðàô³÷íî¿ ³íôîðìàö³¿ graded-junction ~ ä³îä ç ïëàâíèì ïåðåõîäîì digitizing manually prepared layouts Gunn(-åffect)~ ä³îä Ãàííà îöèôðóâàííÿ [ïåðåòâîðåííÿ â öèôðîâó heterojunction ~ ä³îä íà ãåòåðîïåðåõîä³ ôîðìó ãðàô³÷íèõ äàíèõ ] ï³äãîòîâëåíèõ hot-carrier ~ ä³îä íà ãàðÿ÷èõ íîñ³ÿõ âðó÷íó òîïîëîã³÷íèõ åñê³ç³â impact-avalanche and transit-time diluent ðîçáàâíèê; ðîç÷èííèê [IMPATT] ~ ëàâèííî-ïðîë³òíèé ä³îä, ËÏÄ N2 ~ àçîò ÿê ãàç-íîñ³é
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dis intrinsic-barrier ~ ð–i–n-ä³îä isolation ~ ³çîëþþ÷èé ä³îä laser ~ ëàçåðíèé ä³îä, ³íæåêö³éíèé ëàçåð light-emitting ~ ñâ³òëîä³îä, ñâ³òëîâèïðîì³íþþ÷èé ä³îä, ÑÂÄ MBE ~ ä³îä, âèãîòîâëåíèé ³ç çàñòîñóâàííÿì ìîëåêóëÿðíî-ïó÷êîâî¿ åï³òàêñ³¿ mercury-probe-silicon ~ ð–n-ïåðåõ³ä ì³æ êðåìí³ºì ³ ðòóòíèì çîíäîì mesa (-type) ~ ìåçàä³îä, ä³îä ç ìåçàñòðóêòóðîþ negative(-resistance) ~ ä³îä ç íåãàòèâíèì îïîðîì organic-on-GaAs ~ ä³îä ³ç ñòðóêòóðîþ òèïó «îðãàí³÷íà ñïîëóêà íà àðñåí³ä³ ãàë³þ» pin ~ p–i–n-ä³îä planar epitaxial ~ ïëàíàðíî-åï³òàêñ³àëüíèé ä³îä punch-through ~ ä³îä íà åôåêò³ ïðîêîëó áàçè (òðàíçèñòîðà) Read ~ ä³îä гäà reference ~ îïîðíèé ä³îä reverse-biased ~ çâîðîòíî-çì³ùåíèé ä³îä Schottky(-barrier)~ ä³îä Øîòê³ shallow ~ ä³îä ç äð³áíîþ ñòðóêòóðîþ (ä³îä, ñôîðìîâàíèé â òîíêîìó ïîâåðõíåâîìó øàð³ íàï³âïðîâ³äíèêà) source-drain ~ (çàõèñíèé) ä³îä ì³æ ñòîêîì ³ âèòîêîì (â ÌÎÍ-òðàíçèñòîð³ ç V-ïîä³áíîþ êàíàâêîþ) temperature-compensated ~ ä³îä ç òåìïåðàòóðíîþ êîìïåíñàö³ºþ TRAPATT [trapped plasma avalanche transit-time] ~ ëàâèííî-êëþ÷îâèé ä³îä variable-capacitance ~ âàð³êàï; âàðàêòîð variable-reactance ~ âàðàêòîð VC ~ CM. variable-capacitance diode voltage-reference [voltage-regulator, Zener] ~ ñòàá³ë³òðîí dioxide 1. ä³îêñèä 2. ä³îêñèä êðåìí³þ, SiO2 native-grown silicon ~ âëàñíèé ä³îêñèä êðåìí³þ recessed silicon ~ ä³îêñèä êðåìí³þ, ñôîðìîâàíèé â êàíàâêàõ silicon ~ ä³îêñèä êðåìí³þ, SiO2 titanium ~ ä³îêñèä òèòàíà, ÒiO2 tungsten ~ ä³îêñèä âîëüôðàìó, WO2 DIP ïëîñêèé êîðïóñ ç äâîðÿäíèì ðîçòàøóâàííÿì øòèðüêîâèõ âèâîä³â, êîðïóñ òèïó DIP, DIP-êîðïóñ
lead cavity ~ DIP-êîðïóñ ç ìàðê³ðóþ÷èì ïîãëèáëåííÿì íà ïåðøîìó âèâîä³ shrink ~ ìàëîãàáàðèòíèé DIP-êîðïóñ (ç êðîêîì âèâîä³â 1,75 ìì) single-layer alumina metallized ~ DIPêîðïóñ ç îäíîð³âíåâîþ ìåòàë³çàö³ºþ êåðàì³÷íî¿ (àëóíäîâî¿) îñíîâè skinny ~ ìàëîãàáàðèòíèé DIP-êîðïóñ (ç â³äñòàííþ ì³æ ðÿäàìè âèâîä³â 1,75 ìì) SLAM ~ äèâ. single-layer alumina metallized DIP standard ~ ñòàíäàðòíèé DIP-êîðïóñ (ç êðîêîì âèâîä³â 2,5 ìì) dip: emitter ~ çàãëèáëåííÿ åì³òåðà dipping ïîãðóæåííÿ; çàíóðåííÿ solder ~ çàíóðåííÿ â (ðîçïëàâëåíèé) ïðèï³é direction: crystal(lographic)~ êðèñòàëîãðàô³÷íèé íàïðÿì preferred ~ ïð³îðèòåòíèé íàïðÿì (ïîøèðåííÿ ïðîì³ííÿ) discard-at-failure ñêèäàííÿ ïðè çáî¿ (íåñïðàâíîñò³ ²Ñ) discharge 1. ðîçðÿä 2. ðîçñìîêòóâàííÿ (çàðÿäó) ~ holes ðîçñìîêòóâàííÿ ä³ð÷àñòèõ çàðÿä³â glow ~ òë³þ÷èé ðîçðÿä Townsend ~ òàóíäñåíäîâñüêèé ðîçðÿä discipline: design ~ 1. ïðîåêòóâàííÿ (ÿê äèñöèïë³íà) 2. ³íæåíåð³ÿ ïðîåêòóâàííÿ (âêëþ÷àþ÷à êîìïëåêñ ïðîöåäóð ³ ìåòîä³â, ùî ãàðàíòóþòü ðîçðîáêó âèñîêîÿê³ñíîãî ïðîåêòó ²Ñ) discontinuity ðîçðèâ; ïîðóøåííÿ áåçïåðåðâíîñò³ band ~ ðîçðèâ çîííî¿ ñòðóêòóðè heterojunction ~ åíåðãåòè÷íèé ñòðèáîê íà ãåòåðîïåðåõîä³ dislocation äèñëîêàö³ÿ edge ~ êðàéîâà äèñëîêàö³ÿ Frank partial ~ ÷àñòêîâà äèñëîêàö³ÿ imperfect [misfit] ~ äèñëîêàö³ÿ íåâ³äïîâ³äíîñò³ perfect ~ ïîâíà äèñëîêàö³ÿ screw ~ ãâèíòîâà äèñëîêàö³ÿ Shockley partial ~ ÷àñòêîâà äèñëîêàö³ÿ ïî Øîêë³ slip ~ äèñëîêàö³ÿ êîâçàííÿ
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dom dismear(ing) âèäàëåííÿ ïîâåðõíåâèõ çàáðóäíåíü; çíåæèðåííÿ disorder (ñòðóêòóðíå) ðîçóïîðÿäêóâàííÿ (êðèñòàë³÷íèõ ãðàòîê) compositional ~ ïîðóøåííÿ ñêëàäó; íåîäíîð³äí³ñòü ñêëàäó (íàïð. íàï³âïðîâ³äíèêîâîãî ç’ºäíàííÿ), êîìïîçèö³éíå ðàç-âïîðÿäêóâàííÿ lattice ~ ïîðóøåííÿ ïîðÿäêó (ðîçóïîðÿäêóâàííÿ) êðèñòàë³÷íèõ ãðàòîê dispenser äîçóþ÷èé ïðèñòð³é; ïîäàþ÷èé ïðèñòð³é (äëÿ ð³äêèõ ìàòåð³àë³â) dispensing: syringe ~ äîçóâàííÿ (íàïð. ïàÿëüíî¿ ïàñòè) øïðèöîì display: character ~ 1. áóêâåíî-öèôðîâèé äèñïëåé 2. â³äîáðàæåííÿ áóêâåíî-öèôðîâî¿ ³íôîðìàö³¿ graphic ~ 1. ãðàô³÷íèé äèñïëåé 2. â³äîáðàæåííÿ ãðàô³÷íî¿ ³íôîðìàö³¿; âèâ³ä ãðàô³÷íî¿ ³íôîðìàö³¿ lead status ~ ïðèñòð³é â³äîáðàæåííÿ ñòàíó êàíàë³â óâåäåííÿ-âèâåäåííÿ motion-picture ~ â³äîáðàæåííÿ äèíàì³÷íèõ çîáðàæåíü; â³äîáðàæåííÿ òðàñóâàííÿ çì³ííèõ network status ~ 1. â³äîáðàæåííÿ ñòàíó ìåðåæ³ 2. ïðèñòð³é â³äîáðàæåííÿ ñòàíó ìåðåæ³ dissipation: power ~ ðîçñ³ÿííÿ ïîòóæíîñò³ dissipator òåïëîâ³äâ³ä; ðàä³àòîð (äèâ. ò-æ sink) dissociation: IB multiple-proton ~ ³íôðà÷åðâîíà áàãàòîïðîòîííà äèñîö³àö³ÿ single-photon ~ îäíîôîòîííà äèñîö³àö³ÿ distance: interatomic ~ ïåð³îä êðèñòàë³÷íèõ ãðàòîê lattice ~ ïîñò³éíà [ïàðàìåòð] êðèñòàë³÷íèõ ãðàòîê distortion: ~ energy bands âèêðèâëåííÿ åíåðãåòè÷íèõ çîí lattice ~ ñïîòâîðåííÿ êðèñòàë³÷íèõ ãðàòîê mask ~ 1. âèêðèâëåííÿ ìàñêè 2. âèêðèâëåííÿ [âèãèí] ôîòîøàáëîíó out-of-plane ~ ïîçàïëîùèííà äåôîðìàö³ÿ pattern ~ ñïîòâîðåííÿ ìàëþíêà
wafer ~ äåôîðìàö³ÿ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè X-ray ~ äèñòîðñ³ÿ ðåíòãåí³âñüêîãî ïðîì³ííÿ distribution: Boltzman ~ ðîçïîä³ë Áîëüöìàíà charge ~ ðîçïîä³ë çàðÿäó congestion ~ (ù³ëüíå) ðîçïîä³ë ì³æç’ºäíàíü (íà êðåìí³ºâ³é ï³äêëàäö³) cumulative service time ~ êóìóëÿòèâíèé ðîçïîä³ë ÷àñó îáñëóãîâóâàííÿ (â ìåðåæ³) defect-density ~ ðîçïîä³ë äåôåêò³â ïî ãóñòèí³ degenerate ~ âèðîäæåíèé ðîçïîä³ë depth ~ ðîçïîä³ë (äîì³øêè) ïî ãëèáèí³ dopant [doping] ~ ðîçïîä³ë (ëåãóþ÷î¿) äîì³øêè electron energy ~ ðîçïîä³ë åëåêòðîí³â ïî åíåðã³ÿõ error-function ~ ðîçïîä³ë â³äïîâ³äíî äî ôóíêö³¿ äîïîâíåííÿ ïîìèëîê äî 1 Fermi ~ ðîçïîä³ë Ôåð쳖ijðàêà field ~ ðîçïîä³ë íàïðóæåíîñò³ åëåêòðè÷íîãî ïîëÿ (íàïð. â åï³òàêñ³àëüíîìó øàð³) Gaussian ~ ãàóññ³âñüêèé [íîðìàëüíå] ðîçïîä³ë impurity ~ ðîçïîä³ë (ëåãóþ÷î¿) äîì³øêè nondegenerate ~ íåâèðîäæåíèé ðîçïîä³ë Maxwell ~ ðîçïîä³ë Ìàêñâåëëà power ~ ðîçâîäêà æèâëåííÿ (äëÿ ñòàíäàðòíèõ êîì³ðîê) space [spatial] ~ ïðîñòîðîâèé ðîçïîä³ë velocity ~ ðîçïîä³ë ïî øâèäêîñòÿõ 3-D ~ òðèâèì³ðíèé ðîçïîä³ë (íàïð. äåôåêò³â â êðèñòàë³÷íèõ ãðàòîêàõ) distributor ðîçïîä³ëüíèé ïðèñòð³é disturbance: lattice ~ ïîðóøåííÿ ñòðóêòóðè êðèñòàë³÷íèõ ãðàòîê ditch êàíàâêà; ïîãëèáëåííÿ Dolby ²Ñ øóìîçàãëóøåííÿ, ²Ñ Äîëá³ domain 1. äîìåí 2. îáëàñòü antiphase ~ àíòèôàçíèé äîìåí bubble [ñólindrical magnetic] ~ öèë³íäðîâèé ìàãí³òíèé äîìåí, ÖÌÄ fault ~ ñóêóïí³ñòü äàíèõ íåñïðàâíîñòåé ferroelectric ~ ñåãíåòîåëåêòðè÷íèé äîìåí ferromagnetic ~ ôåðîìàãí³òíèé äîìåí magnetic bubble ~ öèë³íäðîâèé ìàãí³òíèé äîìåí, ÖÌÄ space ~ ïðîñòîðîâà îáëàñòü
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dos time ~ òèì÷àñîâà îáëàñòü implant(ation)~ ³îííå ëåãóâàííÿ, ³îííà dongle øèôðàòîð ³ìïëàíòàö³ÿ donor 1. äîíîð, äîíîðíà äîì³øêà 2. äîíîðíèé injection ~ ³íæåêö³éíå ëåãóâàííÿ (äîì³øêîþ ð³âåíü â ãàçîâîìó ïîòîö³) deep ~ ãëèáîêèé äîíîð interstitial ~ ëåãóâàííÿ ç óòâîðåííÿì shallow ~ ì³ëêèé äîíîð äåôåêò³â óïðîâàäæåííÿ dopant (ëåãóþ÷à) äîì³øêà ion-implant(ation)~ ³îííå ëåãóâàííÿ, ³îííà acceptor ~ àêöåïòîðíà äîì³øêà ³ìïëàíòàö³ÿ arsenic ~ ëåãóþ÷èé ìèø’ÿê ion-shower ~ çëèâîâå ³îííå ëåãóâàííÿ buried-collector ~ äîì³øêà äëÿ (ñóö³ëüíèì ïîòîêîì ³îí³â) (ôîðìóâàííÿ) ïðèõîâàíîãî øàðó êîëåêòîðà laser ~ ëàçåðíå [ëàçåðíî-ñòèìóëþþ÷å] conductivity-type determining ~ äîì³øêà, ëåãóâàííÿ ùî âèçíà÷ຠòèï ïèòîìî¿ ïðîâ³äíîñò³ lifetime-killer ~ ëåãóâàííÿ äîì³øêîþ, ùî íàï³âïðîâ³äíèêà çìåíøóº ÷àñ æèòòÿ íåîñíîâíèõ íîñ³¿â donor ~ äîíîðíà äîì³øêà çàðÿäó ion-implanted ~ ³îííî-³ìïëàíòîâàíà localized ~ ëîêàëüíå ëåãóâàííÿ äîì³øêà low(-concentration) ~ ñëàáêå ëåãóâàííÿ isolation ~ äîì³øêà äëÿ ôîðìóâàííÿ modulation ~ íåîäíîð³äíå [ìîäóëüîâàíå] ³çîëþþ÷î¿ îáëàñò³ (²Ñ) ëåãóâàííÿ n-type ~ äîíîðíà äîì³øêà neutron(-transmutation)~ ëåãóâàííÿ p-type ~ àêöåïòîðíà äîì³øêà íåéòðîííî-òðàíñìóòàö³¿ silicon ~ äîì³øêà äëÿ êðåìí³þ photochemical ~ ôîòîõ³ì³÷íå ëåãóâàííÿ spin-on ~ äîì³øêà, ùî íàíîñèòüñÿ íà plasma ~ ïëàçìîâå (äèôóç³éíå) ëåãóâàííÿ ïîâåðõíþ íàï³âïðîâ³äíèêà post-îõidation ~ ëåãóâàííÿ ï³ñëÿ spun-on ~ äîì³øêà, íàíåñåíà íà ïîâåðõíþ îêñèäóâàííÿ íàï³âïðîâ³äíèêà preferential ~ âèáîð÷å ëåãóâàííÿ dope (ëåãóþ÷à) äîì³øêà | ëåãóâàòè (äèâ. ò-æ proximity ~ êîíòàêòíå ëåãóâàííÿ (çà dopant) ðàõóíîê ïåðåì³ùåííÿ íîñ³¿â ç ìàòåð³àëó ç doped ëåãîâàíèé øèðîêîþ çàáîðîíåíîþ çîíîþ â ìàòåð³àë ç degenerately ~ ëåãîâàíèé äî ñòàí âóçüêîþ çàáîðîíåíîþ çîíîþ) âèðîäæåííÿ sheet ~ ïîøàðîâå ëåãóâàííÿ heavily [highly] ~ ñèëüíîëåãîâàíèé shower ~ çëèâîâå ³îííå ëåãóâàííÿ lightly ~ ñëàáîëåãèðîâàííûé (ñóö³ëüíèì ïîòîêîì ³îí³â) doper óñòàíîâêà äëÿ ëåãóâàííÿ solute ~ ëåãóâàííÿ äîì³øêîþ ç ðîç÷èíó doping ëåãóâàííÿ substitutional ~ ëåãóâàííÿ ç óòâîðåííÿì arsenic ~ ëåãóâàííÿ ìèø’ÿêîì äåôåêò³â çàì³ùåííÿ atomic layer ~ ëåãóâàííÿ â îäíîìó àòîìíîìó transmutation ~ íåéòðîííî-òðàíñìóòàö³éíå ìîíîøàð³ ëåãóâàííÿ background ~ ôîíîâå ëåãóâàííÿ dosage 1. äîçà 2. äîçóâàííÿ control ~ êåðîâàíå ëåãóâàííÿ ion-implantation ~ äîçà ³îí³â äîì³øêè, ùî counter ~ êîìïåíñóþ÷å ëåãóâàííÿ ³ìïëàíòóþòüñÿ (äîì³øêîþ ïðîòèëåæíîãî òèïó) dose äîçà | äîçóâàòè double ~ ïîäâ³éíå [äâîêðàòíå] ëåãóâàííÿ electron ~ äîçà îïðîì³íþâàííÿ droplet-migration ~ ëåãóâàííÿ ìåòîäîì åëåêòðîíàìè, åëåêòðîííà äîçà ì³ãðàö³¿ êðàïåëü ðîçïëàâó, ùî ì³ñòèòü exposure ~ åêñïîçèö³éíà äîçà äîì³øêó heavy ~ âåëèêà äîçà erratic ~ íåêåðîâàíå ëåãóâàííÿ light ~ ìàëà äîçà field îõide ~ ëåãóâàííÿ ï³ä çàõèñíèì øàðîì radiation tolerance ~ äîïóñòèìà äîçà îêñèäó ðàä³àö³¿ (íàïð. äëÿ ðàä³àö³éíî-ñò³éêî¿ ²Ñ) heavy [high] ~ ñèëüíå ëåãóâàííÿ doser äîçàòîð, äîçóþ÷å ïðèñòð³é
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dro dot: ink ~ êðàïëÿ ôàðáíèêà (äëÿ â³äì³òêè äåôåêòíèõ êðèñòàë³â) quantum ~ òî÷êîâèé êâàíòîâèé (íàï³âïðîâ³äíèêîâèé) ïðèëàä dotting: gold ~ íàíåñåííÿ (íàïð. íà îñíîâó êîðïóñó) òî÷îê ïàñòè íà îñíîâ³ çîëîòà down(ward) -scaling ìàñøòàáóâàííÿ, ïðîïîðö³éíå çìåíøåííÿ ðîçì³ð³â (åëåìåíò³â ²Ñ) (äèâ. ò-æ scaling) active ~ àêòèâíå ìàñøòàáóâàííÿ (çìåíøåííÿ âåðòèêàëüíèõ ðîçì³ð³â åëåìåíò³â ²Ñ) draft êðåñëåííÿ; åñê³ç | âèêðåñëþâàòè; ðîáèòè åñê³ç drafter 1. êîîðäèíàòîãðàô; ãðàô³÷íèé ïðèñòð³é 2. êðåñëÿð; òîïîëîã; ôîòîøàáëîííèê drafting: computer(-aided)~ âèãîòîâëåííÿ êðåñëåíü çà äîïîìîãîþ ÅÎÌ coordinate ~ âèêðåñëþâàííÿ íà êîîðäèíàòîãðàô³ drain 1. ñò³ê, ñò³÷íà îáëàñòü (ïîëüîâîãî òðàíçèñòîðà) 1. ñïîæèâàííÿ ñòðóìó diffused ~ äèôóç³éíèé ñò³ê ion-implanted ~ ³îííî-³ìïëàíòîâàíèé ñò³ê lightly-doped ~ ñëàáîëåãîâàíèé ñò³ê majority-carrier ~ â³äâåäåííÿ îñíîâíèõ íîñ³¿â çàðÿäó n-doped ~ ñò³ê n-òèïó drawing 1. êðåñëåííÿ; ìàëþíîê; ñõåìà (äèâ. ò-æ layout) 2. âèêðåñëþâàííÿ 3. âèòÿãàííÿ (íàïð. êðèñòàëà) assembly ~ ñêëàäàëüíå êðåñëåííÿ computer-aided ~ âèãîòîâëåííÿ êðåñëåíü çà äîïîìîãîþ ÅÎÌ layout ~ 1. òîïîëîã³÷íå êðåñëåííÿ 2. âèêðåñëþâàííÿ òîïîëî㳿 master ~ 1. åòàëîííå êðåñëåííÿ 2. îðèã³íàë (ôîòîøàáëîíà) photomask ~ êðåñëåííÿ ôîòîøàáëîíà scale ~ êðåñëåííÿ, âèêîíàíå â ìàñøòàá³ scaled-up ~ êðåñëåííÿ â çá³ëüøåíîìó ìàñøòàá³ drier äèâ. dryer drift äðåéô; â³äõ³ä; çì³ùåííÿ | äðåéôóâàòè; çì³ùóâàòèñÿ carrier ~ äðåéô íîñ³¿â çàðÿäó
electron ~ äðåéô åëåêòðîí³â gain ~ çì³íà êîåô³ö³ºíòà ï³äñèëåííÿ long-term ~ äîâãîòðèâàëèé äðåéô offset-voltage ~ â³äõ³ä íàïðóãè çì³ùåííÿ short-term ~ êîðîòêî÷àñíèé äðåéô temperature ~ â³äõ³ä ïàðàìåòð³â ï³ä âïëèâîì òåìïåðàòóðè drive 1. çàïóñê; çáóäæåííÿ | çàïóñêàòè; ïîðóøóâàòè 2. óïðàâëÿòè 3. ðîç³ãíàòè äîì³øêó 4. ïðèâ³ä backward [C-] ~ çâîðîòíèé ïðîõ³ä, Ñ-ðóõ (â D-àëãîðèò-ìå ãåíåðàö³¿ òåñòó äëÿ ïîøóêó íåñïðàâíîñòåé) D- ~ D-ïðîõ³ä, D-ðóõ (åòàï àêòèâàö³¿ øëÿõó â D-àëãîðèòì³ ïîáóäîâè òåñòó ²Ñ) forward ~ ïðÿìå ïðîñóâàííÿ (â àëãîðèòì³ ãåíåðàö³¿ òåñòó äëÿ ïîøóêó íåñïðàâíîñòåé) multiple-vector D- ~ áàãàòîâåêòîðíèé Dïðîõ³ä single-vector D- ~ îäíîâåêòîðíèé D-ïðîõ³ä drive-in ðîçã³í äîì³øêè (äðóãà ñòàä³ÿ äâîõñòàä³éíî¿ äèôó糿) | ðîç³ãíàòè äîì³øêó base ~ ðîçã³í äîì³øêè äëÿ ôîðìóâàííÿ áàçîâî¿ îáëàñò³ diffusion ~ ðîçã³í äîì³øêè driver 1. çáóäíèê; çàäàþ÷èé ïðèñòð³é 2. ôîðìóâà÷ access ~ ôîðìóâà÷ ñèãíàë³â âèá³ðêè bipolar ~ á³ïîëÿðíà ²Ñ ôîðìóâà÷à bus ~ øèííèé çáóäíèê clock-pulse ~ ôîðìóâà÷ òàêòîâèõ ³ìïóëüñ³â; ôîðìóâà÷ ñèíõðîí³çóþ÷èõ ³ìïóëüñ³â coil ~ çáóäíèê îðòîãîíàëüíèõ îáìîòîê (â ÇÏ íà ÖÌÄ) current ~ ôîðìóâà÷ ñòðóìó depletion-mode ~ ôîðìóâà÷ íà ïîëüîâèõ òðàíçèñòîðàõ, ùî ïðàöþþòü â ðåæèì³ çá³äíåííÿ enhancement-mode ~ ôîðìóâà÷ íà ïîëüîâèõ òðàíçèñòîðàõ, ùî ïðàöþþòü â ðåæèì³ çáàãà÷åííÿ integrated ~ ²Ñ ôîðìóâà÷à memory ~ ôîðìóâà÷ (ñòðóìó âèá³ðêè) ÇÓ peripheral ~ ïåðèôåð³éíà ²Ñ ôîðìóâà÷à read ~ ôîðìóâà÷ ñèãíàë³â ïðî÷èòóâàííÿ write ~ ôîðìóâà÷ ñèãíàë³â çàïèñó; ï³äñèëþâà÷ çàïèñó drop: contact ~ êîíòàêòíà ð³çíèöÿ ïîòåíö³àë³â IR ~ ïàä³ííÿ íàïðóãè íà (àêòèâíîìó) îïîð³
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eff pressure ~ ïåðåïàä òèñêó temperature ~ ïîíèæåííÿ òåìïåðàòóðè voltage ~ ïàä³ííÿ íàïðóãè drop-in 1. ââåäåííÿ òåñòîâî¿ ñòðóêòóðè 2. òåñòîâà ñòðóêòóðà; òåñòîâèé êðèñòàë (â íàï³âïðîâ³äíèêîâ³é ïëàñòèí³) dropouts çíàêè [ô³ãóðè] ïîºäíàííÿ (íà ôîòîøàáëîí³) dropper: eye ~ êðàïåëüíèöÿ (äëÿ íàíåñåííÿ êðàïë³ ôîòîðåçèñòó íà ïëàñòèíó) dross øëàê (íàïð. íà ïîâåðõí³ ðîçïëàâëåíîãî ïðèïîþ) | óòâîðþâàòè øëàê dry ñóøêà | ñóøèòè flash ~ øâèäêà ñóøêà oven ~ ñóøêà â ïå÷³ spin ~ â³äöåíòðîâà ñóøêà dryer ïåêòè äëÿ ñóøêè, ñóøèëüíà ï³÷ cabinet ~ ñóøèëüíà øàôà conveyor ~ êîíâåéºðíà ï³÷ äëÿ ñóøêè infrared ~ óñòàíîâêà äëÿ ³íôðà÷åðâîíî¿ ñóøêè, ðàä³àöè³éíà ï³÷ äëÿ ñóøêè solvent ~ óñòàíîâêà äëÿ ñóøêè ðîç÷èííèê³â spin rinse ~ óñòàíîâêà äëÿ â³äöåíòðîâî¿ ñóøêè ï³ñëÿ â³äìèâàííÿ tunnel ~ òóíåëüíà ï³÷ äëÿ ñóøêè vacuum ~ âàêóóìíà ï³÷ äëÿ ñóøêè drying ñóøêà (äèâ. ò-æ dry) air ~ ñóøêà íà ïîâ³òð³; ñóøêà ïîâ³òðÿì cold ~ ñóøêà ñóáë³ìàö³ºþ HF ~ âèñîêî÷àñòîòíà ñóøêà vacuum ~ ñóøêà ó âàêóóì³ dummy ìàêåò duplicate äóáë³êàò; êîï³ÿ | êîï³þâàòè; ìóëüòèïë³êóâàòè, ðîçìíîæóâàòè (íàïð. ñòðóêòóðè ôîòîøàáëîíó) duplication êîï³þâàííÿ; ìóëüòèïë³êóº, ðîçìíîæåííÿ (íàïð. ñòðóêòóð ôîòîøàáëîíó) duplicator êîï³þâàëüíèé àïàðàò; óñòàíîâêà äëÿ ìóëüòèïë³êàö³¿ (íàïð. ñòðóêòóð ôîòîøàáëîíó) durability 1. ì³öí³ñòü; ñò³éê³ñòü 2. äîâãîâ³÷í³ñòü; òåðì³í ñëóæáè acid ~ êèñëîòîñò³éê³ñòü chemical ~ õ³ìîñò³éê³ñòü, õ³ì³÷íà ñò³éê³ñòü etching ~ ñò³éê³ñòü äî òðàâíèêà humidity ~ âîëîãîñò³éê³ñòü photoresist ~ ñò³éê³ñòü ôîòîðåçèñò³â duration òðèâàë³ñòü, òðèâàë³ñòü life ~ äîâãîâ³÷í³ñòü, òåðì³í ñëóæáè
duroid äþðî¿ä (ïîë³ìåðíèé ìàòåð³àë äëÿ ï³äêëàäîê íàäâèñîêî÷àñòîòíèõ òÑ) dust 1. ïîðîøîê 2. ïèë | âèäàëÿòè ïèë abrasive ~ àáðàçèâíèé ïîðîøîê active ~ á³îëîã³÷íî àêòèâíèé ïèë diamond ~ àëìàçíèé ïîðîøîê grinding ~ ïîðîøîê äëÿ øë³ôóâàííÿ dusting: nitrogen ~ îáäóâøè àçîòîì (íàïð. äëÿ î÷èùåííÿ ïîâåðõí³) duty 1. åêñïëóàòàö³ÿ (ïðèëàäó); íàâàíòàæåííÿ 2. ðåæèì (ðîáîòè) continuous ~ òðèâàëà åêñïëóàòàö³ÿ critical ~ êðèòè÷íèé ðåæèì heavy ~ âàæêèé ðåæèì operating ~ ðîáî÷èé ðåæèì dye ôàðáíèê | îôàðáëþâàòè dye-sensitized ñåíñ³á³ë³çîâàíèé ôàðáíèêîì dynamics: lattice ~ äèíàì³êà êðèñòàë³÷íèõ ãðàòîê
E edge 1. êðàé (íàïð. ôîòîðåçèñòà) 2. ðåáðî (êðèñòàëà) 3. pl ìåæ³ êîíòóð³â, êîíòóðí³ ë³í³¿ ~ board êðîìêà äðóêîâàíî¿ ïëàòè band ~ êðàé (åíåðãåòè÷íî¿) çîíè chip ~ êðàé êðèñòàëà (²Ñ); äîâæèíà ñòîðîíè êðèñòàëà (²Ñ) crystal ~ ðåáðî êðèñòàëà diffusion ~ ìåæà äèôóç³éíî¿ îáëàñò³ exposed ~ â³äêðèòèé êðàé (êðèñòàëà) knife ~ ãîñòðèé êðàé sharp ~ ð³çêèé [÷³òêèé] êðàé (íàïð. øàðó ôîòîðåçèñòà) valence-band ~ êðàé âàëåíòíî¿ çîíè effect 1. åôåêò; ÿâèùå 2. âïëèâ; ä³ÿ acoustoelectric ~ àêóñòîåëåêòðè÷íèé åôåêò avalanche ~ 1. ëàâèííà ³îí³çàö³ÿ 2. ëàâèííå ìíîæåííÿ band-folding ~ åôåêò çãîðòàííÿ çîíè (â íàäãðàòêàõ) barrier ~ áàð’ºðíèé åôåêò birefringent ~ ïîäâ³éíå ïðîìåíåçàëîìëåííÿ, äâî(ïðîìåíå) çàëîìëåííÿ body ~ åôåêò ï³äêëàäêè (÷óòëèâ³ñòü ïîðîãîâî¿ íàïðóãè äî ïîòåíö³àëó ï³äêëàäêè) bulk ~ îá’ºìíèé åôåêò channel ~ êàíàëüíèé åôåêò
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ele charge-volume ~ åôåêò îá’ºìíîãî çàðÿäó Dember ~ åôåêò Äåìáåðà domain ~ âïëèâ äîìåí³â Early ~ åôåêò Åðë³, åôåêò ìîäóëÿö³¿ áàçè edge ~ êðàéîâèé åôåêò electrooptical ~ åëåêòðîîïòè÷íèé åôåêò end ~ êðàéîâèé åôåêò Esaki ~ òóíåëüíèé åôåêò Ettingshausen ~ åôåêò Åòò³íñãàóçåíà field ~ åôåêò ïîëÿ, ïîëüîâèé åôåêò flux-creep ~ êðèï-åôåêò ïîòîêó (ëàâèíîïîä³áíèé çðèâ, ñïîâçàííÿ âèõîð³â) Gunn ~ åôåêò Ãàííà Hall ~ åôåêò Õîëëà hot-carrier ~ åôåêò ãàðÿ÷èõ íîñ³¿â hot-electron ~ åôåêò ãàðÿ÷èõ åëåêòðîí³â inter-proximity ~ ì³æåëåìåíòíèé åôåêò áëèçüêîñò³ intra-proximity ~ âíóòð³øíüîåëåìåíòíèé [âíóòð³øí³é] åôåêò áëèçüêîñò³ Josephson ~ åôåêò Äæîçåôñîíà Kerr (magnelooptical) ~ ìàãí³òîîïòè÷íèé åôåêò Êåððà magnetostrictive ~ åôåêò ìàãí³òîñòðèêö³¿ manhatten ~ åôåêò çäèáëþâàííÿ êîðïóñ³â ïðè ïàÿíí³ (â ìåòîä³ ïîâåðõíåâîãî ìîíòàæó) moir ~ ìóàðîâèé åôåêò Nernst ~ åôåêò Íåðíñòà, ïîçäîâæí³é ãàëüâàíîòåðìîìàãí³òíèé åôåêò Nernst-Ettingshausen ~ åôåêò Íåðíñòà– Åòò³íñãàóçåíà, òåðìîãàëüâàíîìàãí³òíèé åôåêò nonparabolicity ~ åôåêò íåïàðàáîë³÷íîñò³ (åíåðãåòè÷íî¿ çîíè) Ovshinsky ~ åôåêò Îâøèíñüêîãî pairing ~ åôåêò ñïàðîâóâàííÿ åëåêòðîí³â Peltier ~ (åëåêòðîòåðì³÷íèé) åôåêò Ïåëüò’º photodiffusion ~ åôåêò Äåìáåðà photovoltaic ~ ôîòîãàëüâàí³÷íèé åôåêò ploy ~ åôåêò çàõîïëåííÿ íîñ³¿â äåôåêòàìè ïîâåðõí³ (â ÏÇÇ) Pockels ~ (åëåêòðîîïòè÷íèé) åôåêò Ïîêêåëüñà proximity ~ åôåêò áëèçüêîñò³ (âçàºìíèé âïëèâ áëèçüêèé ðîçòàøîâàíèõ åëåìåíò³â) punch-through ~ åôåêò ïðîêîëó áàçè, åôåêò ñòóëåííÿ Read ~ åôåêò гäà Schottky ~ åôåêò Øîòê³
Seebeck ~ (òåðìîåëåêòðè÷íèé) åôåêò Ǻºáåêà shadow ~ åôåêò åêðàíóâàííÿ (íàïð. ïðè íàïèëåíí³ ìåòàëó) short-channel ~ åôåêò êîðîòêîãî êàíàëó, êîðîòêîêàíàëüíèé åôåêò (â ïîëüîâîìó òðàíçèñòîð³) shot ~ åôåêò äðîáó sidewalk ~ âïëèâ ñòðóì³â âèòîêó skin ~ ñêèí-åôåêò, ïîâåðõíåâèé åôåêò surface-leakage ~ âïëèâ ïîâåðõíåâèõ ñòðóì³â âèòîêó Thomson ~ åôåêò Òîìñîíà, åëåêòðîòåðì³÷íèé åôåêò threshold ~ ïîðîãîâèé åôåêò transient ~ ïåðåõ³äíèé åôåêò trapping ~ åôåêò çàõîïëåííÿ tunnel (ing) ~ òóíåëüíèé åôåêò Wiedemann ~ åôåêò ³äåìàíà Zener ~ åôåêò Çåíåðà à(àëüôà) – particle ~ âïëèâ á-÷àñòèíîê efficiency 1. åôåêòèâí³ñòü; âèõ³ä; â³ääà÷à 2. êîåô³ö³ºíò êîðèñíî¿ ä³¿, ÊÊÄ collector ~ êîåô³ö³ºíò ïåðåäà÷³ åì³òåðíîãî ñòðóìó òðàíçèñòîðà â ñõåì³ ³ç çàãàëüíîþ áàçîþ, àëüôà, á conversion ~ êîåô³ö³ºíò ïåðåòâîðåííÿ electronic ~ åëåêòðîííèé ÊÊÄ injection ~ êîåô³ö³ºíò ³íæåêö³¿ quantum ~ êâàíòîâà åôåêòèâí³ñòü, êâàíòîâèé âèõ³ä reaction ~ ðåàêö³éíà åôåêòèâí³ñòü transfer [transport] ~ êîåô³ö³ºíò ïåðåíåñåííÿ effort: assembly ~ ñêëàäàëüíî-ìîíòàæí³ ðîáîòè design ~ 1. ïðîåêòóâàííÿ; ðîçðîáêà; êîíñòðóþâàííÿ 2. òðóäîì³ñòê³ñòü ïðîåêòóâàííÿ ejector: die ~ ïðèñòð³é äëÿ â³ää³ëåííÿ êðèñòàëà â³ä ðîçä³ëåíî¿ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè electret åëåêòðåò electricity åëåêòðèêà static ~ ñòàòè÷íà åëåêòðèêà electrode åëåêòðîä base ~ áàçîâèé åëåêòðîä, åëåêòðîä áàçè CCD ~ åëåêòðîä ÏÇÇ collector ~ åëåêòðîä êîëåêòîðà, åëåêòðîä êîëåêòîðà
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ele control ~ óïðàâëÿþ÷èé çàòâîð (ïîëüîâîãî òðàíçèñòîðà); óïðàâëÿþ÷èé åëåêòðîä coplanar ~s êîìïëàíàðí³ åëåêòðîäè depletion-mode gate ~ åëåêòðîä çàòâîðà ÌÎÍ-òðàíçèñòîðà, ùî ïðàöþº â ðåæèì³ çá³äíåííÿ drain ~ åëåêòðîä ñòîêó (ïîëüîâîãî òðàíçèñòîðà) enhancement-mode-gate ~ åëåêòðîä çàòâîðà ÌÎÍ-òðàíçèñòîðà, ùî ïðàöþº â ðåæèì³ çáàãà÷åííÿ extra ~ ïåðåäàþ÷èé çàòâîð (ÏÇÇ) gate ~ åëåêòðîä çàòâîðà (íàïð. ïîëüîâîãî òðàíçèñòîðà) insulated gate ~ ³çîëüîâàíèé åëåêòðîä çàòâîðà metal gate ~ ìåòàëåâèé åëåêòðîä çàòâîðà; çàòâîð (ÏÇÇ) phase ~ ôàçîâèé åëåêòðîä (ÏÇÇ) planar ~ ïëîñêèé åëåêòðîä reference ~ êîíòðîëüíèé åëåêòðîä Schottky(-barrier gate)~ çàòâîð ó âèãëÿä³ áàð’ºðó Øîòê³, çàòâîð Øîòê³ self-aligned ~ ñàìîñóì³ùåíèé åëåêòðîä source ~ åëåêòðîä âèòîêó (ïîëüîâîãî òðàíçèñòîðà) spaced ~s ðîçïîä³ëåí³ [ùî ðîçíåñëè] åëåêòðîäè storage ~ åëåêòðîä çáåð³ãàííÿ (ÏÇÇ) electrodeposition åëåêòðîë³òè÷íå îñàäæåííÿ, åëåêòðîîñàäæåííÿ electrodialysis åëåêòðîä³àë³ç electroetching åëåêòðîõ³ì³÷íå òðàâëåííÿ electroforming ãàëüâàíîïëàñòèêà electromicrograph ì³êðîôîòîãðàô³ÿ [ì³êðîçîáðàæåííÿ] â åëåêòðîííîìó ì³êðîñêîï³ electromigration åëåêòðîì³ãðàö³ÿ electron åëåêòðîí Auger ~ îæå-åëåêòðîí backscattered ~s ðîçñ³ÿí³ åëåêòðîíè (íàïð. ðîçñ³ÿí³ ç îáëàñò³ åêñïîíóâàííÿ) bound ~ çâ’ÿçàíèé åëåêòðîí conduction ~ åëåêòðîí ïðîâ³äíîñò³ drifting ~ äðåéôóþ÷èé åëåêòðîí ejected [emitted] ~ åëåêòðîí, ùî âèïóñêàºòüñÿ [åæåêòîâàíèé] excess ~ íàäì³ðíèé åëåêòðîí free ~ â³ëüíèé åëåêòðîí hot ~ ãàðÿ÷èé åëåêòðîí
injected ~ åëåêòðîí, ùî ³íæåêòóºòüñÿ outer(-shell) [ðåripheral]~ âàëåíòíèé åëåêòðîí photoejected ~ ôîòîåæåêòîâàíèé åëåêòðîí replacement ~ åëåêòðîí çàì³ùåííÿ tunneling ~ òóíåëþþ÷èé åëåêòðîí valence ~ âàëåíòíèé åëåêòðîí electron-coupled ç åëåêòðîííèì çâ’ÿçêîì electronegativity åëåêòðîíåãàòèâí³ñòü electronics 1. åëåêòðîí³êà 2. ³íòåãðàëüí³ ñõåìè; åëåêòðîííà àïàðàòóðà; åëåêòðîíí³ ïðèëàäè analog ~ 1. àíàëîãîâà åëåêòðîí³êà 2. àíàëîãîâ³ ³íòåãðàëüí³ ñõåìè; àíàëîãîâà åëåêòðîííà àïàðàòóðà cryogenic ~ êð³îãåííà åëåêòðîí³êà, êð³îåëåêòðîí³êà digital ~ 1. öèôðîâà åëåêòðîí³êà 2. öèôðîâ³ ³íòåãðàëüí³ ñõåìè; öèôðîâà åëåêòðîííà àïàðàòóðà film ~ ïë³âêîâ³ ³íòåãðàëüí³ ñõåìè functional ~ ôóíêö³îíàëüíà åëåêòðîí³êà high-speed ~ øâèäêîä³éí³ ³íòåãðàëüí³ ñõåìè integrated ~ 1. ³íòåãðàëüíà åëåêòðîí³êà 2. ³íòåãðàëüí³ ñõåìè microsystem ~ ì³êðîåëåêòðîí³êà microwave ~ ³íòåãðàëüí³ ñõåìè ÍÂ×ä³àïàçîíó; åëåêòðîííà àïàðàòóðà ÍÂ×ä³àïàçîíó molecular(-scale)~ ìîëåêóëÿðíà åëåêòðîí³êà peripheral ~ ïåðèôåð³éí³ ³íòåãðàëüí³ ñõåìè picosecond ~ ³íòåãðàëüí³ ñõåìè ç ï³êîñåêóíäíîþ øâèäêî䳺þ semiconductor ~ íàï³âïðîâ³äíèêîâà åëåêòðîí³êà solid-state ~ òâåðäîò³ëüíà åëåêòðîí³êà superconducting [superconductive] ~ 1. åëåêòðîí³êà íàäïðîâ³äíèê³â 2. êð³îãåííà åëåêòðîí³êà, êð³îåëåêòðîí³êà transistor ~ òðàíçèñòîðíà åëåêòðîí³êà very high-speed ~ íàäøâèäêîä³þ÷³ [íàäøâèäê³ñí³] ³íòåãðàëüí³ ñõåìè; íàäøâèäêîä³þ÷à åëåêòðîííà àïàðàòóðà electrooptics 1. åëåêòðîîïòèêà 2. îïòîåëåêòðîí³êà electrophilic åëåêòðîô³ëüíèé, åëåêòðîàêöåïòîðíèé, êàò³îíî¿äíèé electroplating åëåêòðîë³òè÷íå îñàäæåííÿ, åëåêòðîîñàäæåííÿ
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ele laser-heated ~ åëåêòðîë³òè÷íå îñàäæåííÿ ç ëàçåðíèì íàãð³âîì electropolishing åëåêòðîë³òè÷íà ïîë³ðîâêà, åëåêòðîïîë³ðîâêà electrorefining åëåêòðîë³òè÷íå î÷èùåííÿ, åëåêòðîî÷èùåííÿ electrostatics åëåêòðîñòàòèêà electrostriction åëåêòðîñòðèêö³ÿ electrotinning åëåêòðîë³òè÷íå ëóä³ííÿ element 1. åëåìåíò; êîìïîíåíò; ïðèëàä; ³íòåãðàëüíà ñõåìà, ²Ñ (äèâ. ò-æ chip, circuit, component) 2. (õ³ì³÷íèé) åëåìåíò active ~ 1. àêòèâíèé åëåìåíò; àêòèâíèé êîìïîíåíò 2. àêòèâíèé åëåìåíò (â àëãîðèòìàõ ïî䳺âîãî ìîäåëþâàííÿ: åëåìåíò, ó ÿêîãî õî÷à á íà îäíîìó âõîä³ çì³íèëîñÿ çíà÷åííÿ ñèãíàëó) array ~ 1. ìàòðè÷íèé åëåìåíò; åëåìåíò áàçîâîãî ìàòðè÷íîãî êðèñòàëà 2. êîì³ðêà ìàòðè÷íî¿ ²Ñ capacitive-storage ~ åëåìåíò ºìíîñò³ çáåð³ãàííÿ (â ÏÇÇ) chevron propagating ~ øåâðîííèé åëåìåíò ñõåìè ïðîñóâàííÿ ÖÌÄ chip ~ áåçêîðïóñíà ²Ñ circuit ~ ñõåìíèé åëåìåíò; êîìïîíåíò ñõåìè column III À V ~ íàï³âïðîâ³äíèêîâèé ïðèëàä íà ñïîëóêàõ òèïó À²²²ÂV combinational logic ~ êîìá³íàö³éíèé ëîã³÷íèé åëåìåíò control ~ óïðàâëÿþ÷èé åëåìåíò; óïðàâëÿþ÷à ²Ñ cryogenic ~ êð³îãåííèé åëåìåíò distributed ~ åëåìåíò ç ðîçïîä³ëåíèìè ïàðàìåòðàìè doping ~ ëåãóþ÷èé åëåìåíò electronic ~ åëåêòðîííèé êîìïîíåíò; åëåêòðîííèé ïðèëàä field-effect-transistor ~ 1. ²Ñ íà ïîëüîâèõ òðàíçèñòîðàõ 2. ïîëüîâèé òðàíçèñòîð (äèâ. ò-æ FET) floating-gate ~ åëåìåíò ç ïëàâàþ÷èì çàòâîðîì functional ~ ôóíêö³îíàëüíèé åëåìåíò fuse ~ ïëàâêà ïåðåìè÷êà (â ÏËÌ) generic ~ õàðàêòåðíèé [çàãàëüíèé] åëåìåíò Gunn ~ ä³îä Ãàííà; ïðèëàä (íà åôåêò³) Ãàííà Hall ~ åëåìåíò íà åôåêò³ Õîëëà
image ~ åëåìåíò çîáðàæåííÿ impurity ~ äîì³øêîâèé åëåìåíò; ëåãóþ÷èé åëåìåíò inclusive OR ~ ëîã³÷íèé åëåìåíò âêëþ÷àþ÷å ÀÁÎ integrated ~ ³íòåãðàëüíèé åëåìåíò inverting ~ ³íâåðòóþ÷èé åëåìåíò; ³íâåðòóâàííÿ Josephson junction ~ åëåìåíò íà ïåðåõîäàõ Äæîçåôñîíà key ~ êëþ÷îâèé åëåìåíò; êëþ÷îâèé êîìïîíåíò library ~ (ñòàíäàðòíèé) á³áë³îòå÷íèé åëåìåíò (íàïð. êîì³ðêà, ôðàãìåíò, ï³äñõåìà, ùî ïàðàìåòðèçóºòüñÿ) light-emitting semiconductor ~ ñâ³òëîâèïðîì³íþþ÷èé íàï³âïðîâ³äíèêîâèé ïðèëàä (íàïð. ñâ³òëîä³îä) light-receiving ~ ôîòîäåòåêòîð (íàïð. ôîòîä³îä) linear ~ ë³í³éíà ²Ñ logical ~ ëîã³÷íèé åëåìåíò (äèâ. ò-æ gate) lumped-circuit ~ åëåìåíò ³ç çîñåðåäæåíèìè ïàðàìåòðàìè magnetic propagation ~ ìàãí³òíèé åëåìåíò ñõåìè ïðîñóâàííÿ ÖÌÄ majority ~ åëåìåíò ìàæîðèòàðíî¿ ëîã³êè, ìàæîðèòàðíèé åëåìåíò march ~ ïîñë³äîâí³ñòü òåñòó «ìàðø» (äëÿ ïåðåâ³ðêè Â²Ñ ÇÓ) matrix ~ êîì³ðêà ìàòðèö³ memory ~ åëåìåíò ïàì’ÿò³; ùî çàïàì’ÿòîâóº åëåìåíò microcircuit ~ ³íòåãðàëüíèé åëåìåíò microelectronic ~ ì³êðîåëåêòðîííèé åëåìåíò; ³íòåãðàëüíà ñõåìà, ²Ñ monolithic ~ ìîíîë³òíèé åëåìåíò multiple logic ~ ëîã³÷íèé åëåìåíò ç ñêëàäíîþ ôóíêö³ºþ (íàïð. ÍÅ–È, ÍÅ– ÈËÈ) NAND ~ ëîã³÷íèé åëåìåíò ÍÅ–È NAND-NOR ~ ëîã³÷íèé åëåìåíò ÍÅ–È– ÍÅ–ÈËÈ negative-resistance ~ åëåìåíò ç íåãàòèâíèì îïîðîì network ~ åëåìåíò ñõåìè nonlinear ~ íåë³í³éíèé åëåìåíò one-transistor ~ îäíîòðàíçèñòîðíèé åëåìåíò optoelectronic ~ îïòîåëåêòðîííèé ïðèëàä parasitic ~ ïàðàçèòíèé åëåìåíò
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emu passive ~ ïàñèâíèé êîìïîíåíò pattern ~ åëåìåíò çîáðàæåííÿ phantom ~ ïñåâäîåëåìåíò, ô³êòèâíèé åëåìåíò (íàïð. òåñòó, ñõåìè) picture ~ åëåìåíò çîáðàæåííÿ propagating [propagation] ~ åëåìåíò ñõåìè ïðîñóâàííÿ ÖÌÄ redundant ~ åëåìåíò ðåçåðâóâàííÿ resolution ~ åëåìåíò, ùî âèçíà÷ຠðîçä³ëüíó çäàòí³ñòü (íàïð. çîáðàæåííÿ) semiconductor ~ 1. íàï³âïðîâ³äíèêîâèé (õ³ì³÷íèé) åëåìåíò, ïðîñòèé íàï³âïðîâ³äíèê 2. íàï³âïðîâ³äíèêîâèé êîìïîíåíò; íàï³âïðîâ³äíèêîâèé ïðèëàä 3. êðèñòàë (íàï³âïðîâ³äíèêîâîãî ïðèëàäó) shared ~ ôóíêö³îíàëüíî ñóì³ùåíèé (³íòåãðàëüíèé) åëåìåíò solid-state ~ òâåðäîò³ëüíèé åëåìåíò; íàï³âïðîâ³äíèêîâèé åëåìåíò stripe-geometry ~ ñìóæêîâèé åëåìåíò, åëåìåíò ç ñìóæêîâîþ ãåîìåòð³ºþ superconducting ~ íàäïðîâ³äíèêîâèé åëåìåíò thick-film ~ òîâñòîïë³âêîâèé åëåìåíò thin-film ~ òîíêîïë³âêîâèé åëåìåíò ultratrace ~ ì³êðîñë³äè (õ³ì³÷íîãî) åëåìåíòó elephant: white ~ ïðîô. «á³ëèé ñëîí» (â³äâåäåííÿ òðóáè äèôóç³éíî¿ ïå÷³, ïðèçíà÷åíå äëÿ îõîëîäæóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí) elevator. cassette ~ ï³äéîìíèé ïðèñòð³é äëÿ êàñåò elimination: electrostatic ~ çíÿòòÿ çàðÿä³â ñòàòè÷íî¿ åëåêòðèêè Gaussian ~ âèêëþ÷åííÿ Ãàóñà ellipsometer åë³ïñîìåòð (äëÿ âèì³ðþâàííÿ òîâùèíè òîíêèõ ïë³âîê) embedding: crystal ~ ãåðìåòèçàö³ÿ êðèñòàëà exact ~ åòàï óòî÷íåííÿ òðàñ (êàíàëó òðàñóâàííÿ) embossment îáëàñòü ï³äíåñåííÿ (íàïð. ñòîâï÷èêîâèé âèâ³ä) emission 1. åì³ñ³ÿ 2. âèïðîì³íþâàííÿ cold ~ àâòîåëåêòðîííà åì³ñ³ÿ deep-level [DL] ~ åì³ñ³ÿ â³ëüíèõ íîñ³¿â ç ãëèáîêîãî ð³âíÿ
electron ~ åì³ñ³ÿ åëåêòðîí³â field ~ àâòîåëåêòðîííà åì³ñ³ÿ gamma ~ ãàììà-âèïðîì³íþâàííÿ photoelectric ~ ôîòîåëåêòðîííà åì³ñ³ÿ, çîâí³øí³é ôîòîåôåêò Schottky ~ åì³ñ³ÿ Øîòê³ secondary electron ~ âòîðèííà åëåêòðîííà åì³ñ³ÿ thermionic ~ òåðìîåëåêòðîííà åì³ñ³ÿ emitter åì³òåð, åì³òåðíà îáëàñòü amorphous ~ àìîðôíèé åì³òåð, åì³òåð ç àìîðôíîãî ìàòåð³àëó arsenic(-doped) ~ åì³òåð, ëåãîâàíèé ìèø’ÿêîì diffused ~ äèôóç³éíèé åì³òåð grid ~ åì³òåð êîì³ðêîâîãî òèïó infrared ~ äæåðåëî ²×-âèïðîì³íþâàííÿ interdigital ~ åì³òåð ñòð³÷íî-ãðåá³í÷àñòîãî òèïó inverted ~ îáåðíåíèé åì³òåð ion-implanted ~ ³îííî-³ìïëàíòîâàíèé åì³òåð mesh ~ åì³òåð êîì³ðêîâîãî òèïó oxide-walled ~ åì³òåð ç îêñèäíîþ ³çîëÿö³ºþ á³÷íèõ ñò³íîê shallow ~ åì³òåð ç äð³áíîþ ñòðóêòóðîþ, äð³áíà åì³òåðíà îáëàñòü submicrometer-wide ~ åì³òåðíà îáëàñòü ñóáì³êðîííî¿ øèðèíè superlattice ~ åì³òåð â íàäãðàòö³ walled ~ åì³òåð ç îêñèäíîþ ³çîëÿö³ºþ á³÷íèõ ñò³íîê wide-band-gap ~ øèðîêîçîííèé åì³òåð emitter-coupled ç åì³òåðíèì çâ’ÿçêîì emulation åìóëÿö³ÿ roving ~ ïåðåì³ùóâàíà åìóëÿö³ÿ (ìåòîä ñàìîòåñòóâàííÿ ²Ñ ïî ïåðåðèâàííÿõ) snapshot ~ åìóëÿö³ÿ ó ô³êñîâàíèé ìîìåíò ÷àñó emulator åìóëÿòîð in-circuit ~ âíóòð³øíüîñõåìíèé åìóëÿòîð emulsifier åìóëüãàòîð emulsion åìóëüñ³ÿ; ôîòîåìóëüñ³ÿ, ôîòîðåçèñò electron-sensitive ~ åëåêòðîííî-÷óòëèâà åìóëüñ³ÿ fine-line [high-resolution] åìóëüñ³ÿ ç âèñîêîþ ðîçä³ëüíîþ çäàòí³ñòþ light-sensitive ~ ôîòîåìóëüñ³ÿ, ôîòîðåçèñò negative ~ íåãàòèâíà ôîòîåìóëüñ³ÿ, íåãàòèâíèé ôîòîðåçèñò
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eng positive ~ ïîçèòèâíà ôîòîåìóëüñ³ÿ, ïîçèòèâíèé ôîòîðåçèñò UV ~ åìóëüñ³ÿ, ÷óòëèâà äî óëüòðàô³îëåòîâîãî [ÓÔ-]âèïðîì³íþâàííÿ enable: byte high ~ ñèãíàë äîçâîëó ñòàðøîãî á³òà (â ïðîöåñîðíèõ ²Ñ) enamel: porcelain ~ ôàðôîðîâà åìàëü (ïîêðèòòÿ äëÿ ï³äêëàäîê òÑ) vitreous ~ ñêëîïîä³áíà åìàëü encapsulant ãåðìåòèê, ãåðìåòèçóþ÷èé ìàòåð³àë epoxy ~ åïîêñèäíèé ãåðìåòèê plastic ~ ïëàñòìàñîâèé ãåðìåòèê semiconductor ~ ãåðìåòèê äëÿ íàï³âïðîâ³äíèêîâèõ ïðèëàä³â silicone ~ ãåðìåòèê ç êðåìí³é-îðãàí³÷íîãî ïîë³ìåðó encapsulation ãåðìåòèçàö³ÿ (÷àø³ ïëàñòìàñîþ) dip ~ ãåðìåòèçàö³ÿ ìåòîäîì çàíóðåííÿ (â ð³äêèé ãåðìåòèê) epoxy ~ ãåðìåòèçàö³ÿ åïîêñèäíîþ ñìîëîþ glass ~ ãåðìåòèçàö³ÿ ñêëîì hermetic ~ ãåðìåòèçàö³ÿ high-specification ~ âèñîêîÿê³ñíà ãåðìåòèçàö³ÿ leak-tight ~ âîëîãîíåïðîíèêíà ãåðìåòèçàö³ÿ metal-can ~ ãåðìåòèçàö³ÿ çà äîïîìîãîþ ìåòàëåâîãî êîðïóñó plastic ~ ãåðìåòèçàö³ÿ ïëàñòìàñîþ resin ~ ãåðìåòèçàö³ÿ ñìîëîþ silicone ~ ãåðìåòèçàö³ÿ êðåìí³éîðãàí³÷íîþ ñìîëîþ encasing ìîíòàæ â êîðïóñ enclosure êîðïóñ; îáîëîíêà hermetic ~ ãåðìåòè÷íèé êîðïóñ SMIF ~ (øëþçîâà) êàìåðà ñòàíäàðòíîãî ìåõàí³÷íîãî ³íòåðôåéñó encoder êîäóþ÷å ïðèñòð³é, êîäåð; øèôðàòîð digital ~ öèôðîâèé êîäåð; öèôðîâèé øèôðàòîð priority ~ êîäåð ïð³îðèòåòó pulse ~ ³ìïóëüñíèé êîäåð Viterbi ~ êîäåð ³òåðá³ voltage ~ øèôðàòîð íàïðóãè encroaching: lateral ~ òðàâëåííÿ â ãîðèçîíòàëüíîìó íàïðÿì³
encroachment: base ~ ðîçøèðåííÿ áàçè; ïðîñóâàííÿ áàçè field-îõide ~ çàòðóþâàííÿ ï³ä çàõèñíèì îêñèäîì oxide ~ çàòðóþâàííÿ ï³ä îêñèäíîþ ìàñêîþ endpoint: etch ~ ìîìåíò çàâåðøåííÿ òðàâëåííÿ endurance 1. çíîñîñò³éê³ñòü; ñò³éê³ñòü 2. òåðì³í ñëóæáè, äîâãîâ³÷í³ñòü heat ~ òåðìîñò³éê³ñòü energy åíåðã³ÿ acceptor àñtivation ~ åíåðã³ÿ àêòèâàö³¿ àêöåïòîð³â allowed ~ äîçâîëåíèé åíåðãåòè÷íèé ð³âåíü bandgap ~ øèðèíà çàáîðîíåíî¿ (åíåðãåòè÷íî¿) çîíè domain ~ åíåðã³ÿ äîìåíà donor àñtivation ~ åíåðã³ÿ àêòèâàö³¿ äîíîð³â excitation ~ åíåðã³ÿ çáóäæåííÿ Fermi ~ åíåðã³ÿ Ôåðì³; åíåðãåòè÷íèé ð³âåíü Ôåðì³ free ~ â³ëüíà åíåðã³ÿ impurity àñtivation ~ åíåðã³ÿ àêòèâàö³¿ äîì³øêè impurity ionization ~ åíåðã³ÿ ³îí³çàö³¿ äîì³øêè engine: simulation ~ ñïåöïðîöåñîð ìîäåëþâàííÿ; ìàøèíà ìîäåëþâàííÿ engineering 1. òåõí³êà 2. êîíñòðóþâàííÿ; ïðîåêòóâàííÿ atomic layer ~ êîíñòðóþâàííÿ [ñòâîðåííÿ] ïðèëàäîâèõ ñòðóêòóð ç òî÷í³ñòþ äî îäíîãî àòîìíîãî øàðó circuits ~ ñõåìîòåõí³êà computer-aided ~ àâòîìàòèçîâàíå ïðîåêòóâàííÿ (âêëþ÷ຠïðîãðàìíå ³ òåõí³÷íå çàáåçïå÷åííÿ äëÿ ïðîõîäæåííÿ ïðîåêòó â³ä ïî÷àòêîâî¿ ôàçè äî ï³äãîòîâêè âèðîáíèöòâà) control ~ àâòîìàòèêà; òåõí³êà àâòîìàòè÷íîãî óïðàâë³ííÿ cryogenic ~ êð³îãåííà òåõí³êà electronic ~ åëåêòðîííà òåõí³êà front-end ~ ïðîåêòóâàííÿ â³ä ñïåöèô³êàö³¿ äî åëåêòðè÷íî¿ ñõåìè ç óðàõóâàííÿì âåðèô³êàö³¿ high-frequency ~ âèñîêî÷àñòîòíà òåõí³êà integrated-circuit ~ ïðîåêòóâàííÿ ²Ñ
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epi mask-making ~ òåõíîëîã³ÿ âèãîòîâëåííÿ metal ~ ìåòàëåâèé êîðïóñ ôîòîøàáëîí³â environment óìîâè íàâêîëèøíüîãî microwave ~ ÍÂ×-òåõí³êà ñåðåäîâèùà molecular ~ ìîëåêóëÿðíà òåõíîëîã³ÿ ambient ~ óìîâè íàâêîëèøíüîãî photomask-making ~ òåõíîëîã³ÿ ñåðåäîâèùà âèãîòîâëåííÿ ôîòîøàáëîí³â CAD programming support ~ çàñîáè plant ~ òåõí³êà ìîíòàæó, åêñïëóàòàö³¿ ³ ï³äòðèìêè ïðîãðàìíîãî çàáåçïå÷åííÿ îáñëóãîâóâàííÿ óñòàòêóâàííÿ class-100 clean ~ (âèðîáíè÷³) óìîâè, process ~ òåõíîëîã³ÿ â³äïîâ³äí³ êëàñó ÷èñòîòè 100 production ~ òåõíîëîã³ÿ âèðîáíèöòâà clean-room ~ óìîâè ÷èñòî¿ ê³ìíàòè reverse ~ â³äòâîðåííÿ, êîï³þâàííÿ (çðàçê³â dust-free ~ çíåïèëåíå ñåðåäîâèùå (íàïð. ïðèëàä³â) ñêàôàíäð) semiconductor ~ íàï³âïðîâ³äíèêîâà òåõí³êà engineering workstation ~ ïåðèôåð³éíå software ~ ðîçðîáêà ïðîãðàìíîãî óñòàòêóâàííÿ ðîáî÷î¿ ñòàíö³¿ çàáåçïå÷åííÿ evacuated ~ âàêóóìíå ñåðåäîâèùå, âàêóóì systems ~ ñèñòåìîòåõí³êà harmful ~ íåñïðèÿòëèâå ñåðåäîâèùå (íàïð. engraving ãðàâ³ðóâàííÿ; ñòâîðåííÿ â³äíîñíî çàáðóäíåíü) ì³êðîðåëüºôó hierarchical ~ ³ºðàðõ³÷íå ïðîåêòóâàííÿ wafer ~ ñòâîðåííÿ ì³êðîðåëüºôó íà hostile ~ àãðåñèâíå çîâí³øíº ñåðåäîâèùå íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ information-retrieval ~ ³íôîðìàö³éíîenhancement 1. çáàãà÷åííÿ 2. ï³äñèëåííÿ; ïîøóêîâå ñåðåäîâèùå ñòèìóëþâàííÿ; ñòèìóëÿö³ÿ integrated project support ~ ç’ºäíàíå ~ approach ðîçøèðåííÿ ìîæëèâîñòåé ñåðåäîâèùå ï³äòðèìêè ïðîåêòó ²Ñ ìåòîäó oxidizing ~ îêèñëþâàëüíå ñåðåäîâèùå electron ~ çáàãà÷åííÿ åëåêòðîíàìè rugged ~ æîðñòê³ óìîâè (íàïð. hole ~ çáàãà÷åííÿ ä³ðêàìè åêñïëóàòàö³¿); íåñïðèÿòëèâ³ óìîâè image ~ ï³äâèùåííÿ ÿêîñò³ çîáðàæåííÿ íàâêîëèøíüîãî ñåðåäîâèùà ion ~ ³îííà ñòèìóëÿö³ÿ severe ~ æîðñòê³ óìîâè (íàïð. åêñïëóàòàö³¿); irradiation induced ~ ðàä³àö³éíà ñòèìóëÿö³ÿ íåñïðèÿòëèâ³ óìîâè íàâêîëèøíüîãî oxidation ~ ñòèìóëþâàííÿ (ïðîöåñó) ñåðåäîâèùà îêñèäóâàííÿ vacuum ~ âàêóóìíå ñåðåäîâèùå, âàêóóì picture ~ ï³äâèùåííÿ ÿêîñò³ çîáðàæåííÿ epi 1. åï³òàêñ³àëüíèé øàð 2. åï³òàêñ³àëüíèé resolution ~ ï³äâèùåííÿ ðîçä³ëüíî¿ arsenic-doped ~ åï³òàêñ³àëüíèé øàð, çäàòíîñò³ ëåãîâàíèé ìèø’ÿêîì thermal-gradient ~ ï³äâèùåííÿ epi-island åï³òàêñ³àëüíèé îñòð³âåöü òåìïåðàòóðíîãî ãðà䳺íòà epilayer åï³òàêñ³àëüíèé øàð enhancement-type ïðàöþþ÷èé â ðåæèì³ lattice-graded ~s åï³òàêñ³àëüí³ øàðè ç çáàãà÷åííÿ ìàòåð³àë³â ç ïëàâíîçì³ííèìè ïîñò³éíèìè entrapping 1. óëîâëþâàííÿ (íàïð. øê³äëèâî¿ ãðàòêè ïàðè) 2. çàõîïëåííÿ (íîñ³¿â çàðÿäó) epitaxy åï³òàêñ³ÿ entry: atmospheric pressure ~ åï³òàêñ³ÿ ïðè conversational remote batch ~ äèñòàíö³éíå àòìîñôåðíîìó òèñêó ïàêåòíå ââåäåííÿ (äàíèõ) â ä³àëîãîâîìó atom layer ~ àòîìíà [àòîìíî-øàðîâà] ðåæèì³ åï³òàêñ³ÿ conversational remote job ~ äèñòàíö³éíå chemical beam ~ õ³ì³êî-ïó÷êîâà åï³òàêñ³ÿ ââåäåííÿ çàäà÷ â ä³àëîãîâîìó ðåæèì³ chloride vapor phase ~ åï³òàêñ³ÿ ç ïàðîâî¿ direct data ~ áåçïîñåðåäíº ââåäåííÿ äàíèõ ôàçè õëîðèä³â envelope êîðïóñ; îáîëîíêà close space ~ åï³òàêñ³ÿ â çàìêíóòîìó îá’ºì³ electron ~ åëåêòðîííà îáîëîíêà EBE ~ åëåêòðîííî-ñòèìóëþþ÷à åï³òàêñ³ÿ glass ~ ñêëÿíèé êîðïóñ
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equ electron-beam ~ åëåêòðîííî-ïðîìåíåâà adjoint ~s çâ’ÿçàí³ ð³âíÿííÿ åï³òàêñ³ÿ Arrhenius ~ ð³âíÿííÿ Àððåí³óñà flow-rate modulation ~ åï³òàêñ³ÿ ç Boltzmann transport ~ ð³âíÿííÿ ïåðåíîñó ìîäóëÿö³ºþ øâèäêîñò³ ïîòîêó Áîëüöìàíà gas-source molecular-beam ~ ìîëåêóëÿðíîcontinuity ~ ð³âíÿííÿ áåçïåðåðâíîñò³ ïó÷êîâà åï³òàêñ³ÿ ç ãàçîâèõ äæåðåë diffusion ~ ð³âíÿííÿ äèôó糿 hot wall ~ åï³òàêñ³ÿ ïî ìåòîäó ãàðÿ÷î¿ ñò³íêè Ebers-Moll ~ ð³âíÿííÿ Åáåðñà–Ìîëëà hydrothermal ~ ãsäðîòåðìàëüíà åï³òàêñ³ÿ field ~ ð³âíÿííÿ åëåêòðè÷íîãî ïîëÿ isolated silicon ~ ô³ðì. ³çîëüîâàíà åï³òàêñ³ÿ ideal diode ~ ð³âíÿííÿ ³äåàëüíîãî ä³îäà, êðåìí³þ ð³âíÿííÿ Øîêë³ lateral ~ åï³òàêñ³ÿ íà á³÷í³ ïîâåðõí³ Josephson ~ ð³âíÿííÿ Äæîçåôñîíà liquid (-phase) ~ åï³òàêñ³ÿ ç ð³äêî¿ ôàçè, Poisson ~ ð³âíÿííÿ Ïóàññîíà ð³äèííà åï³òàêñ³ÿ regression ~ ð³âíÿííÿ ðåãðåñ³¿ liquid(-phase) shift ~ ð³äèííà åï³òàêñ³ÿ ç Schrodinger ~ ð³âíÿííÿ Øðåä³íãåðà ïåðåíàñè÷åíîãî ðîç÷èíó Shockley ~ ð³âíÿííÿ Øîêë³, ð³âíÿííÿ low-temperature ~ íèçüêîòåìïåðàòóðíà ³äåàëüíîãî ä³îäà åï³òàêñ³ÿ stiff ~ æîðñòêå ð³âíÿííÿ (ð³âíÿííÿ ³ç metalloorganic vapor-phase ~ åï³òàêñ³ÿ ç çì³ííèìè, ùî ñèëüíî ðîçð³çíÿþòüñÿ) ïàðîâî¿ ôàçè ìåòàëîîðãàí³÷íèõ ñïîëóê transistor ~ ð³âíÿííÿ òðàíçèñòîðà migration-enhanced ~ åï³òàêñ³ÿ ³ç transport ~ ð³âíÿííÿ ïåðåíîñó ñòèìóëþþ÷îþ ì³ãðàö³ºþ (àòîì³â íà equilibrium ð³âíîâàãà, ð³âíîâàæíèé ñòàí ïîâåðõí³), ì³ãðàö³éíî-ñòèìóëþþ÷à equipment óñòàòêóâàííÿ; àïàðàòóðà; åï³òàêñ³ÿ óñòàíîâêà molecular(-beam)~ ìîëåêóëÿðíî-ïó÷êîâà artwork ~ óñòàòêóâàííÿ äëÿ âèãîòîâëåííÿ [ìîëåêóëÿðíà] åï³òàêñ³ÿ îðèã³íàë³â ôîòîøàáëîí³â photoassisted molecular-beam ~ assembly ~ ñêëàäàëüíî-ìîíòàæíå ôîòîñòèìóëþþ÷à ìîëåêóëÿðíî-ïó÷êîâà óñòàòêóâàííÿ åï³òàêñ³ÿ automated test ~ àâòîìàòèçîâàíà òåñòîâà seeding ~ åï³òàêñ³ÿ ç âèêîðèñòàííÿì àïàðàòóðà (äëÿ âèçíà÷åííÿ ôóíêö³îíàëüíî¿ êðèñòàëà ïðèìàíêè (ìîíî) ïðèäàòíîñò³ ñõåìè àáî ñèñòåìè) selective ~ âèáîð÷à [ñåëåêòèâíà] åï³òàêñ³ÿ automatic drafting ~ àâòîìàòè÷íà self-masking ~ ñàìîìàñêóþ÷à åï³òàêñ³ÿ êðåñëÿðñüêà óñòàíîâêà, àâòîìàòè÷íèé solid-phase ~ åï³òàêñ³ÿ ç òâåðäî¿ ôàçè ãðàô³÷íèé ïðèñòð³é thin-film ~ åï³òàêñ³àëüíå âèðîùóâàííÿ beam-tape microinterconnection ~ òîíêèõ ïë³âîê óñòàòêóâàííÿ äëÿ ïðèºäíàííÿ êðèñòàë³â äî vacuum ~ åï³òàêñ³ÿ ó âàêóóì³, âàêóóìíà áàëî÷íèõ âèâîä³â íà ñòð³÷êîâîìó íîñ³¿ åï³òàêñ³ÿ capital ~ îñíîâíå (òåõíîëîã³÷íå) vapor levitation ~ åï³òàêñ³ÿ ç ïàðîâî¿ ôàçè óñòàòêóâàííÿ íà íàï³âïðîâ³äíèêîâ³ ïëàñòèíè, óòðèìóâàí³ chip production ~ óñòàòêóâàííÿ äëÿ íà ïîâ³òðÿí³é ïîäóøö³ òåõíîëîã³÷íî¿ îáðîáêè íàï³âïðîâ³äíèêîâèõ vapor-phase ~ åï³òàêñ³ÿ ç ïàðîâî¿ ôàçè ïëàñòèí (äëÿ ôîðìóâàííÿ êðèñòàë³â ²Ñ) vapor-transport ~ ãàçîòðàíñïîðòíà computer-aided ~ àïàðàòí³ çàñîáè åï³òàêñ³ÿ àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ epoxy åïîêñèäíà ñìîëà computer update ~ àïàðàòóðà ÅÎÌ äëÿ conductive ~ åëåêòðîïðîâ³äíà åïîêñèäíà îíîâëåííÿ ³ íàêîïè÷åííÿ äàíèõ ñìîëà cryogenic ~ êð³îãåííà àïàðàòóðà thermally conductive ~ òåïëîïðîâ³äíà diffusion ~ äèôóç³éí³ ïå÷³ åïîêñèäíà ñìîëà direct-wafer-stepping ~ óñòàíîâêà äëÿ epoxy-glass ñêëîåïîêñèä áåçïîñåðåäíüîãî êðîêîâîãî åêñïîíóâàííÿ equation ð³âíÿííÿ evacuation ~ âàêóóìíå óñòàòêóâàííÿ
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etc fabrication ~ òåõíîëîã³÷íå óñòàòêóâàííÿ high-vacuum technology ~ âèñîêîâàêóóìíå (òåõíîëîã³÷íå) óñòàòêóâàííÿ in-line ~ óñòàòêóâàííÿ äëÿ ïîòîêîâî¿ òåõíîëîã³÷íî¿ ë³í³¿ inspection ~ àïàðàòóðà â³çóàëüíîãî êîíòðîëþ interactive graphics ~ ä³àëîãîâ³ ãðàô³÷í³ òåðì³íàëè interconnection ~ ñêëàäàëüíî-ìîíòàæíå óñòàòêóâàííÿ leased-circuit connection ~ àïàðàòóðà ï³äêëþ÷åííÿ äî îðåíäîâàíèõ êàíàë³â manufacturing ~ òåõíîëîã³÷íå óñòàòêóâàííÿ masking ~ 1. óñòàòêóâàííÿ äëÿ ë³òîãðàô³¿ 2. óñòàòêóâàííÿ äëÿ âèãîòîâëåííÿ ôîòîøàáëîí³â mask-making ~ óñòàíîâêà äëÿ âèãîòîâëåííÿ øàáëîí³â microinterconnection ~ ñêëàäàëüíîìîíòàæíå óñòàòêóâàííÿ äëÿ ì³êðîåëåêòðîí³êè photolithography ~ óñòàòêóâàííÿ äëÿ ôîòîë³òîãðàô³¿ plotting ~ ãðàô³÷íèé ïðèñòð³é; êîîðäèíàòîãðàô polysilicon diffusion ~ äèôóç³éí³ ïå÷³ ç òðóáàìè ç ïîë³êðåìí³þ printing ~ óñòàòêóâàííÿ äëÿ ë³òîãðàô³¿; óñòàòêóâàííÿ òðàôàðåòíîãî äðóêó processing [production] ~ òåõíîëîã³÷íå óñòàòêóâàííÿ projection alignment ~ ïðîåêö³éíà óñòàíîâêà ïîºäíàííÿ ³ åêñïîíóâàííÿ step-and-repeat ~ 1. óñòàòêóâàííÿ äëÿ ïîñë³äîâíî¿ êðîêîâî¿ ìóëüòèïë³êàö³¿ (íàïð. ôîòîïîâòîðþâà÷) 2. óñòàòêóâàííÿ ïðîåêö³éíî¿ ë³òîãðàô³¿ ç ïîñë³äîâíèì êðîêîâèì åêñïîíóâàííÿì step-on-wafer ~ óñòàòêóâàííÿ ïðîåêö³éíî¿ ë³òîãðàô³¿ ç ïîñë³äîâíèì êðîêîâèì åêñïîíóâàííÿì support ~ äîïîì³æíå óñòàòêóâàííÿ tape-carrier system ~ óñòàòêóâàííÿ äëÿ çá³ðêè ²Ñ íà ñòð³÷êîâîìó íîñ³¿ wafer handling ~ íàâàíòàæóâàëüíîðîçâàíòàæóâàëüíå ³ òðàíñïîðòíå óñòàòêóâàííÿ äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí
wafer-measuring ~ êîíòðîëüíîâèì³ðþâàëüíà àïàðàòóðà äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí wafer-processing ~ óñòàòêóâàííÿ äëÿ òåõíîëîã³÷íî¿ îáðîáêè íàï³âïðîâ³äíèêîâèõ ïëàñòèí wafer-stepping ~ óñòàòêóâàííÿ ïðîåêö³éíî¿ ë³òîãðàô³¿ ç ïîñë³äîâíèì êðîêîâèì åêñïîíóâàííÿì yellow room ~ óñòàòêóâàííÿ äëÿ æîâòèõ ê³ìíàò, ë³òîãðàô³÷íå óñòàòêóâàííÿ equivalent 1. åêâ³âàëåíò 2. åêâ³âàëåíòíèé ëîã³÷íèé åëåìåíò (â³äíî ñíà îäèíèöÿ âèì³ðþâàííÿ ñòóïåíÿ ôóíêö³îíàëüíî¿ ³íòåãðàö³¿ ²Ñ) cell ~ åêâ³âàëåíò êîì³ðêè (íàïð. â Â²Ñ ÇÓ) discrete IC ~ åêâ³âàëåíò ²Ñ ç ìàëèì ñòóïåíåì ³íòåãðàö³¿ (íàïð. äëÿ ïîð³âíÿííÿ ñêëàäíîñò³ ²Ñ) functional ~ ôóíêö³îíàëüíèé åêâ³âàëåíò gate ~ åêâ³âàëåíòíèé ëîã³÷íèé åëåìåíò (â³äíîñíà îäèíèöÿ âèì³ðþâàííÿ ñòóïåíÿ ôóíêö³îíàëüíî¿ ³íòåãðàö³¿ ²Ñ) erosion: ion ~ ³îííà åðîç³ÿ, åðîç³ÿ ïîâåðõí³, ùî âèêëèêàºòüñÿ ³îíàìè error ïîìèëêà alignment ~ ïîìèëêà ïîºäíàííÿ alpha-induced soft ~ âèïàäêîâèé çá³é, âèêëèêàíèé 䳺þ àëüôà-÷àñòîê image ~ ñïîòâîðåííÿ çîáðàæåííÿ interconnection ~ ïîìèëêà ìîíòàæó punctuation ~ ïîìèëêà ïóíêòóàö³¿ (â çàïèñ³ ðîçä³ëüíèê³â ìîâè àïàðàòíîãî ïðåäñòàâëåííÿ ²Ñ) scaling ~ ïîìèëêà ìàñøòàáóâàííÿ, ïîìèëêà ïðîïîðö³éíîãî çìåíøåííÿ ðîçì³ð³â åëåìåíò³â soft ~ âèïàäêîâèé çá³é step-and-repeat ~ ïîìèëêà ïðè ïîñë³äîâí³é êðîêîâ³é ìóëüòèïë³êàö³¿ superposition ~ ïîìèëêà ñóì³ùåííÿ ïðè ïîñë³äîâíîìó ôîðìóâàíí³ øàð³â wiring ~ ïîìèëêà ìîíòàæó escape çì³íà ðåæèìó àäðåñàö³¿ (â ïðîöåñîðí³é ²Ñ) estate: real ~ êîðèñíà ïëîùà êðèñòàëà; êîðèñíà ïëîùà íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè etch 1. òðàâíèê (äèâ. òæ etchant) 2. òðàâëåííÿ
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etc (äèâ. òæ etching) | òðàâèòè à to ~ away bias-ECK plasma stream ~ ÍÂ×-ðåàêòîð ç ï³äáóðþâàòè; to ~ into âèòðàâëÿòè; to ~ out åëåêòðîííèì öèêëîòðîííèì ðåçîíàíñîì âèòðàâëÿòè äëÿ òðàâëåííÿ ïëàçìîâèì ïó÷êîì acid ~ 1. êèñëîòíèé òðàâíèê 2. òðàâëåííÿ cassette-to-cassette ~ óñòàíîâêà òðàâëåííÿ êèñëîòîþ ç êàñåòíèì çàâàíòàæåííÿì ³ âèâàíòàæåííÿì anisotropic ~ 1. àí³çîòðîïíèé òðàâíèê 2. (íàï³âïðîâ³äíèêîâèõ ïëàñòèí) àí³çîòðîïíå òðàâëåííÿ magnetron ion ~ óñòàíîâêà ìàãíåòðîííîãî buffered ~ áóôåðíèé òðàâíèê òèïó äëÿ ³îííîãî òðàâëåííÿ caustic ~ 1. ëóæíèé òðàâíèê 2. òðàâëåííÿ multichamber dry ~ áàãàòîêàìåðíà ëóãîì óñòàíîâêà ³îííîãî òðàâëåííÿ chemical ~ 1. õ³ì³÷íèé òðàâíèê 2. õ³ì³÷íå plasma ~ ïëàçìîâèé ðåàêòîð òðàâëåííÿ, òðàâëåííÿ ðåàêòîð äëÿ ïëàçìîâîãî òîãî, ùî òðàâëåííÿ crystal-orientation dependent ~ 1. (äèâ. ò-æ reactor) àí³çîòðîïíèé òðàâíèê 2. àí³çîòðîïíå spray ~ óñòàíîâêà ñòðóìåíåâîãî òðàâëåííÿ òðàâëåííÿ tetrode ~ ÷îòèðèåëåêòðîäíà óñòàíîâêà gas(eous)~ ãàçîïîä³áíèé òðàâíèê ³îííîãî òðàâëåííÿ isotropic ~ 1. ³çîòðîïíèé òðàâíèê 2. triode ~ òðüîõåëåêòðîäíà óñòàíîâêà ³îííîãî ³çîòðîïíå òðàâëåííÿ òðàâëåííÿ orientation dependent ~ 1. àí³çîòðîïíèé ultrasonic ~ óñòàíîâêà òðàâëåííÿ ç òðàâíèê 2. àí³çîòðîïíå òðàâëåííÿ óëüòðàçâóêîâîþ àêòèâàö³ºþ îõide ~ 1. òðàâíèê äëÿ îêñèäó (íàïð. etching òðàâëåííÿ (äèâ. ò-æ etch) ä³îêñèäó êðåìí³þ) 2. òðàâëåííÿ îêñèäó axid ~ òðàâëåííÿ êèñëîòîþ photoresist-controlled ~ òðàâëåííÿ ç anisotropic ~ àí³çîòðîïíå òðàâëåííÿ âèêîðèñòàííÿì ôîòîðåçèñòíî¿ ìàñêè anode ~ åëåêòðîõ³ì³÷íå òðàâëåííÿ planar plasma ~ ïëàçìîâå òðàâëåííÿ â batch ~ ãðóïîâå òðàâëåííÿ ïëàíàðíîìó ðåàêòîð³ blanket ~ òðàâëåííÿ âñ³º¿ ïîâåðõí³, ñóö³ëüíå step ~ âèòðàâëåííÿ ñõîäèíîê òðàâëåííÿ stress relief ~ òðàâëåííÿ äëÿ çíÿòòÿ chemically assisted ~ õ³ì³÷íî ñòèìóëþþ÷å ïîâåðõíåâèõ íàïðóã òðàâëåííÿ trench ~ âèòðàâëåííÿ êàíàâîê crystallographically sensitive ~ àí³çîòðîïíå V-groove ~ 1. òðàâíèê äëÿ âèòðàâëåííÿ Vòðàâëåííÿ îáðàçíîé êàíàâêè 2. âèòðàâëåííÿ Vdifferential ~ äèôåðåíö³àëüíå òðàâëåííÿ, îáðàçíîé êàíàâêè òðàâëåííÿ ç ð³çíîþ øâèäê³ñòþ wet ~ ð³äêèé òðàâíèê digital ~ òðàâëåííÿ äèñêðåòíèìè ïîðö³ÿìè etchability çä³áí³ñòü äî îáðîáêè òèì, ùî (àòîìíèé øàð çà øàðîì) òðàâëåííÿ diode (ion) ~ ³îííå òðàâëåííÿ â etchant òðàâíèê (äèâ. òæ etch) äâîõåëåêòðîäí³é ñèñòåì³ directional ~ íàïðàâëåíèé òðàâíèê dip ~ òðàâëåííÿ ìåòîäîì çàíóðåííÿ dry ~ ñóõèé (ïëàçìîâèé) òðàâíèê directional ~ íàïðàâëåíå òðàâëåííÿ polishing ~ òðàâíèê äëÿ (õ³ì³÷íî¿) ïîë³ðîâêè dislocation ~ òðàâëåííÿ äëÿ âèÿâëåííÿ selective ~ âèáîð÷èé [ñåëåêòèâíèé] òðàâíèê äèñëîêàö³é vapor ~ ïàðè òðàâíèêà; ãàçîïîä³áíèé dry (process) ~ ñóõå òðàâëåííÿ òðàâíèê electron-beam induced ~ òðàâëåííÿ, ùî etchback (êð³çíå) ïðîòðàâëåííÿ (íàïð. ñòèìóëþº åëåêòðîííèì ïðîìåíåì ìåòàë³çîâàíèõ îòâîð³â â äðóêîâàí³é ïëàò³) excessive ~ ïåðåòðóþâàííÿ etcher óñòàíîâêà (äëÿ) òðàâëåííÿ exciraer laser ~ òðàâëåííÿ ç âèêîðèñòàííÿì acid ~ óñòàíîâêà äëÿ òîãî, ùî òðàâëåííÿ åêñèìåðíîãî ëàçåðà (³ ïàðè õëîðà) êèñëîòîþ gas-phase plasma-assisted ~ ãàçîôàçíå ïëàçìîñòèìóëüîâàíå òðàâëåííÿ
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etc high-frequency ion ~ âèñîêî÷àñòîòíå ³îííå òðàâëåííÿ hydrogen reactive ion ~ ðåàêòèâíå ³îííå òðàâëåííÿ â ñåðåäîâèù³ âîäíþ ion ~ ³îííå [³îííî-ïðîìåíåâå] òðàâëåííÿ ion-assisted plasma ~ òðàâëåííÿ â ïëàçì³, ñóïðîâîäæóâàíå ³îííèì áîìáàðäóâàííÿì (1–100 ìÒîð) ion-beam induced ~ òðàâëåííÿ ï³ä 䳺þ ³îííîãî ïó÷êà, ³îííî-ñòèìóëþþ÷å (ïó÷êîâå) òðàâëåííÿ isotropic ~ ³çîòðîïíå òðàâëåííÿ jet ~ ñòðóìåíåâå òðàâëåííÿ laser-enhanced ~ ëàçåðíî-ñòèìóëþþ÷å òðàâëåííÿ laser-induced pattern projection ~ ëàçåðíîñòèìóëüîâàíå ïðîåêö³éíå òðàâëåííÿ laser radical ~ ðàäèêàëüíå òðàâëåííÿ ç ëàçåðíèì ñòèìóëþâàííÿì lateral ~ òðàâëåííÿ â ãîðèçîíòàëüíîìó [á³÷íîìó] íàïðÿì³ lift-off ~ çâîðîòíà ôîòîë³òîãðàô³ÿ light-induced ~ ôîòîñòèìóëüîâàíå òðàâëåííÿ low-pressure (plasma) ~ òðàâëåííÿ â ãàçîâ³é ïëàçì³ íèçüêîãî òèñêó masked ~ òðàâëåííÿ ÷åðåç ìàñêó maskless ~ áåçìàñêîâå òðàâëåííÿ, òðàâëåííÿ «ïðÿìèì ìàëþâàííÿì» maskless laser ~ áåçìàñêîâå ëàçåðíîñòèìóëþþ÷å òðàâëåííÿ mesa ~ âèòðàâëåííÿ ìåçàñòðóêòóð microwave (plasma) ~ òðàâëåííÿ â ÍÂ×ïëàçì³ mild ~ ñëàáêå òðàâëåííÿ nonundercutting ~ òðàâëåííÿ áåç çàòðóþâàííÿ orientation-dependent ~ àí³çîòðîïíå òðàâëåííÿ oxygen gas plasma ~ òðàâëåííÿ â ïëàçì³ êèñíþ permeation ~ ïðîíèêàþ÷å òðàâëåííÿ (íàïð. ÷åðåç ìàñêó) photochemical ~ ôîòîõ³ì³÷íå òðàâëåííÿ photoelectrochemical ~ åëåêòðîõ³ì³÷íå òðàâëåííÿ ç îïòè÷íèì ñòèìóëþâàííÿì photo-enhanced chemical dry ~ ôîòîñòèìóëüîâàíå õ³ì³÷íå ñóõå òðàâëåííÿ photoexcited ~ ôîòîñòèìóëüîâàíå òðàâëåííÿ
photo-initiated ~ ôîòîñòèìóëüîâàíå òðàâëåííÿ photoresist-masked ~ òðàâëåííÿ ç âèêîðèñòàííÿì, ôîòîðåçèñòíî¿ ìàñêè plasma (reactor) ~ ïëàçìîâå òðàâëåííÿ post ~ ïîñëÿòðàâëåííÿ (íåáàæàíèé åôåêò) preferential ~ ñåëåêòèâíå [âèá³ðêîâå] òðàâëåííÿ; íàïðàâëåíå òðàâëåííÿ radical (plasma) ~ ðàäèêàëüíå ïëàçìîõ³ì³÷íå òðàâëåííÿ radio-frequency plasma ~ âèñîêî÷àñòîòíå ïëàçìîâå òðàâëåííÿ reactive ion ~ ðåàêòèâíå ³îííå òðàâëåííÿ, Ð²Ò regenerative ~ òðàâëåííÿ ç ðåãåíåðàö³ºþ òðàâíèêà resistless ~ òðàâëåííÿ áåç ôîòîðåçèñòíî¿ ìàñêè (íàïð. çà äîïîìîãîþ åêñèìåðíèõ ëàçåð³â) selective ~ ñåëåêòèâíå [âèáîð÷å] òðàâëåííÿ sharp ~ òðàâëåííÿ, ùî çàáåçïå÷óº îòðèìàííÿ ð³âíèõ (ãîñòðèõ) êðà¿â (íàïð. â³êîí â ìàñö³) sideways ~ òðàâëåííÿ â ãîðèçîíòàëüíîìó [á³÷íîìó] íàïðÿì³ single-step laser ~ îäíîñòàä³éíå ëàçåðíå òðàâëåííÿ spray ~ ñòðóìåíåâå òðàâëåííÿ sputter ~ òðàâëåííÿ ðîçïèëþâàííÿì steady-state ~ òðàâëåííÿ ç ïîñò³éíîþ øâèäê³ñòþ synchrotron radiation-assisted ~ òðàâëåííÿ, ñòèìóëüîâàíå ñèíõðîòðîííèì âèïðîì³íþâàííÿì taper ~ âèòðàâëåííÿ êîíóñíèõ ïðîô³ë³â tetrode (ion) ~ ³îííå òðàâëåííÿ â ÷îòèðèåëåêòðîäí³é ñèñòåì³ triode (ion) ~ ³îííå òðàâëåííÿ â òðüîõåëåêòðîäí³é ñèñòåì³ undercut(ting)~ çàòðóþâàííÿ (íàïð. êðåìí³þ ï³ä ìàñêóþ÷èì øàðîì) UV laser ~ ëàçåðíî-ñòèìóëüîâàíå òðàâëåííÿ â ÓÔ-ä³àïàçîíå vacuum ultraviolet-assisted ~ òðàâëåííÿ, ñòèìóëüîâàíå âèïðîì³íþâàííÿì â îáëàñò³ âàêóóìíîãî óëüòðàô³îëåòó vertical ~ àí³çîòðîïíå òðàâëåííÿ VUV-assisted ~ äèâ. vacuum ultraviolet-assisted etching wet (chemical) ~ ð³äèííå òðàâëåííÿ
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exc zero-undercut ~ òðàâëåííÿ áåç çàòðóþâàííÿ Eurochip áàçîâèé ìàòðè÷íèé êðèñòàë, â³äïîâ³äíèé çàõ³äíî-ºâðîïåéñüêîìó ñòàíäàðòó eutectic åâòåêòèêà gold-silicon ~ åâòåêòèêà çîëîòà ³ êðåìí³þ gold-tin ~ åâòåêòèêà çîëîòà ³ îëîâà evaluation îö³íêà; âèçíà÷åííÿ automatic computer ~ àâòîìàòè÷íà îö³íêà ç âèêîðèñòàííÿì ÅÎÌ contact electrical ~ çì³íà åëåêòðè÷íèõ õàðàêòåðèñòèê êîíòàêòó go/no-go ~ îö³íêà íàä³éíîñò³ ïî êðèòåð³þ ïðèäàòíîñò³ input count ~ âèçíà÷åííÿ âèõ³äíèõ çíà÷åíü ëîã³÷íèõ åëåìåíò³â øëÿõîì ï³äðàõóíêó ÷èñëà âõîä³â ç îäíàêîâèìè çíà÷åííÿìè (ïðè ïðîåêòóâàíí³ ëîã³÷íèõ ²Ñ) nondestructive ~ îö³íêà íàä³éíîñò³ íåðóéíóþ÷èì ìåòîäîì process ~ îö³íêà òåõíîëîã³÷íîãî ïðîöåñó scanning-electron microscope ~ îö³íêà íàä³éíîñò³ çà äîïîìîãîþ ðàñòðîâîãî åëåêòðîííîãî ì³êðîñêîïà yield ~ âèçíà÷åííÿ â³äñîòêà âèõîäó ãîäíèõ evaluator 1. ïðîãðàìà ïåðåâ³ðêè (íàïð. ïðàâèëüíîñò³ ðîçì³ùåííÿ åëåìåíò³â ²Ñ) 1. ïðîãðàìà îö³íêè (ðîçðàõóíîê õàðàêòåðèñòèê áëîê³â ç óðàõóâàííÿì òåõíîëîã³÷íèõ ïàðàìåòð³â) evaporant 1. íàïèëþâàíà ðå÷îâèíà 2. âèïàðîâóâàíà ðå÷îâèíà evaporation 1. íàïèëåííÿ, òåðìîâàêóóìíå âèïàðîâóâàííÿ 2. âèïàðîâóâàííÿ activated reactive ~ àêòèâîâàíå ðåàêòèâíå íàïèëåííÿ, ðåàêòèâíå íàïèëåííÿ çáóäæåíèõ ÷àñòèíîê angle ~ íàïèëåííÿ ï³ä êóòîì, ïîõèëå íàïèëåííÿ e-beam [electron-beam] ~ 1. åëåêòðîííîïðîìåíåâå íàïèëåííÿ 2. åëåêòðîííîïðîìåíåâå âèïàðîâóâàííÿ flash ~ âèáóõîâå âèïàðîâóâàííÿ ion ~ ³îííå íàïèëåííÿ ion-enhanced ~ ³îííî-ñòèìóëþþ÷å íàïèëåííÿ laser-(beam)~ 1. ëàçåðíå íàïèëåííÿ 2. ëàçåðíå âèïàðîâóâàííÿ metal ~ òåðìîâàêóóìíà ìåòàë³çàö³ÿ
oblique ~ íàïèëåííÿ ï³ä êóòîì, ïîõèëå íàïèëåííÿ splash-free ~ íàïèëåííÿ áåç ðîçáðèçêóâàííÿ thermal ~ íàïèëåííÿ, òåðìîâàêóóìíå âèïàðîâóâàííÿ thin-film ~ íàïèëåííÿ òîíêèõ ïë³âîê vacuum ~ 1. íàïèëåííÿ, òåðìîâàêóóìíå âèïàðîâóâàííÿ 2. âàêóóìíå âèïàðîâóâàííÿ, âèïàðîâóâàííÿ ó âàêóóì³ evaporator 1. óñòàíîâêà äëÿ íàïèëåííÿ, óñòàíîâêà äëÿ òåðìîâàêóóìíîãî âèïàðîâóâàííÿ 2. âèïàðíèê boat ~ ëîäî÷êîâèé âèïàðíèê crucible ~ òèãåëüíèé âèïàðíèê electron-beam ~ 1. åëåêòðîííîïðîìåíåâà óñòàíîâêà äëÿ íàïèëåííÿ 2. åëåêòðîííîïðîìåíåâèé âèïàðíèê electron-bombardment ~ åëåêòðîííîïðîìåíåâèé âèïàðíèê film ~ óñòàíîâêà äëÿ íàïèëåííÿ òîíêèõ ïë³âîê flash ~ âèïàðíèê äëÿ ïðîâåäåííÿ âèáóõîâîãî âèïàðîâóâàííÿ high-capacity ~ íàïèëþâàëüíà óñòàíîâêà ç âåëèêèì âàêóóìíèì îá’ºìîì; âèñîêîïðîäóêòèâíà íàïèëþâàëüíà óñòàíîâêà hot-filament ~ äðîòÿíèé âèïàðíèê metal ~ óñòàíîâêà äëÿ òåðìîâàêóóìíî¿ ìåòàë³çàö³¿ resistive ~ ðåçèñòèâíèé âèïàðíèê vacuum ~ 1. óñòàíîâêà äëÿ íàïèëåííÿ, óñòàíîâêà äëÿ òåðìîâàêóóìíîãî âèïàðîâóâàííÿ 2. âàêóóìíèé âèïàðíèê event ïîä³ÿ (çì³íà çíà÷åííÿ ñèãíàëó íà âõîä³ àáî âèõîä³ ìîäåëüîâàíîãî ëîã³÷íîãî åëåìåíòó) flag ~ ïîä³ÿ ïî ì³òö³ examination: bright light ~ îïòè÷íèé êîíòðîëü ïðè ÿñêðàâ³é îñâ³òëåíîñò³ X-ray ~ ðåíòãåí³âñüêà äåôåêòîñêîï³ÿ exchange îáì³í, îáì³ííà âçàºìîä³ÿ | îáì³íþâàòè(öÿ) anion ~ àí³îíîîáì³í cation ~ êàò³îíîîáì³í radix ~ ïîðîçðÿäíèé îáì³í exchanger: ion ~ 1. ³îíîîáì³ííà óñòàíîâêà 2. ³îíîîáì³ííà ñìîëà
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ext excise âèð³çàòè, âèðóáóâàòè (íàïð. êðèñòàë ³ç ñòð³÷êîâîãî íîñ³ÿ) excitation 1. çáóäæåííÿ 2. ïîäà÷à òåñòîâèõ ä³é íà Â²Ñ electronic vibrational ~ åëåêòðîííîêîëèâàëüíå çáóäæåííÿ laser ~ ëàçåðíå çáóäæåííÿ rf ~ âèñîêî÷àñòîòíå [Â×-]çáóäæåííÿ thermal ~ òåðì³÷íå çáóäæåííÿ exciton åêñèòîí acceptor-bound ~ åêñèòîí, ëîêàë³çîâàíèé íà àêöåïòîð³ bound ~ çâ’ÿçàíèé åêñèòîí donor-bound ~ åêñèòîí, ëîêàë³çîâàíèé íà äîíîð³ Frenkel ~ åêñèòîí Ôðåíêåëÿ exclusion: minority-carrier ~ åêñêëþç³ÿ íåîñíîâíèõ íîñ³¿â çàðÿäó exerciser âèêîíàâåöü (ïðè â³äëàäö³ ïðîãðàìè) exhaustion: fume ~ âèäàëåííÿ [â³äñìîêòóâàííÿ] øê³äëèâî¿ ïàðè (íàïð. ïðè ïàÿíí³ àáî òðàâëåííÿ) expander ðîçøèðþâà÷ gate ~ ëîã³÷íèé ðîçøèðþâà÷ input/output ~ ðîçøèðþâà÷ ïî âõîäó ³ âèõîäó priority ~ ðîçøèðþâà÷ ïð³îðèòåòó expansion ðîçøèðåííÿ linear ~ ë³í³éíå ðîçøèðåííÿ off-chip memory ~ ðîçøèðåííÿ ïàì’ÿò³ çîâí³øí³ìè (ïî â³äíîøåííþ äî ²Ñ) çàñîáàìè thermal ~ òåïëîâå [òåðì³÷íå] ðîçøèðåííÿ volume ~ îá’ºìíå ðîçøèðåííÿ expectancy: life ~ î÷³êóâàíà äîâãîâ³÷í³ñòü expose 1. åêñïîíóâàòè (íàïð. ôîòîðåçèñò) 2. ðîçêðèâàòè, îãîëÿòè (íàïð. øàð ï³ä ìàñêîþ) 3. âïëèâàòè; ï³ääàâàòè 䳿 à to electron-beam ~ åêñïîíóâàòè åëåêòðîííèì ïðîìåíåì exposer óñòàíîâêà (ñóì³ùåííÿ ³) åêñïîíóâàííÿ, óñòàíîâêà ë³òîãðàô³¿ electron-beam ~ óñòàíîâêà åëåêòðîííîïðîìåíåâî¿ ë³òîãðàô³¿ X-ray ~ óñòàíîâêà ðåíòãåí³âñüêî¿ ë³òîãðàô³¿ exposure 1. åêñïîíóâàííÿ 2. ðîçêðèòòÿ, îãîëåííÿ (íàïð. øàðó ï³ä ìàñêîþ) blanket ~ ñóö³ëüíå åêñïîíóâàííÿ
contact ~ åêñïîíóâàííÿ ïðè êîíòàêòí³é ôîòîë³òîãðàô³¿ deep-UV ~ åêñïîíóâàííÿ äàëüí³ì óëüòðàô³îëåòîâèì âèïðîì³íþâàííÿì die-by-die pattern ~ ïîìîäóëüíå åêñïîíóâàííÿ çîáðàæåíü direct wafer ~ áåçïîñåðåäíº (åëåêòðîííîïðîìåíåâå) åêñïîíóâàííÿ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè (ç øàðîì ðåçèñòà) direct-writing ~ áåçïîñåðåäíº [ïðÿìå] (åëåêòðîííî-ïðîìåíåâå) åêñïîíóâàííÿ electron-beam ~ åëåêòðîííî-ïðîìåíåâå [åëåêòðîííå] åêñïîíóâàííÿ flood ~ åêñïîíóâàííÿ ïî âñüîìó ïîëþ (íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè); åêñïîíóâàííÿ øèðîêèì ïó÷êîì full-field [full-wafer] ~ åêñïîíóâàííÿ íà âñüîìó ïîë³ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè ion ~ ³îííî-ïðîìåíåâå åêñïîíóâàííÿ laser ~ ëàçåðíå åêñïîíóâàííÿ light (optical) - îïòè÷íå åêñïîíóâàííÿ mask ~ åêñïîíóâàííÿ ôîòîðåçèñòíî¿ ìàñêè (÷åðåç ôîòîøàáëîí) multiple ~ áàãàòîêðàòíå åêñïîíóâàííÿ pattern ~ åêñïîíóâàííÿ äëÿ îòðèìàííÿ ìàëþíêà postdevclopment ~ åêñïîíóâàííÿ ï³ñëÿ ïðîÿâëåííÿ projection ~ åêñïîíóâàííÿ ïðè ïðîåêö³éí³é ë³òîãðàô³¿ proton ~ ïðîòîííå åêñïîíóâàííÿ proximity ~ åêñïîíóâàííÿ ç (ì³êðî) çàçîðîì SOR ~ äèâ. synchrotron exposure step-and-repeat ~ åêñïîíóâàííÿ ç ïîñë³äîâíîþ êðîêîâîþ ìóëüòèïë³êàö³ºþ, ïîñë³äîâíå êðîêîâå åêñïîíóâàííÿ synchrotron ~ åêñïîíóâàííÿ âèïðîì³íþâàííÿì ñèíõðîòðîíà ultraviolet ~ åêñïîíóâàííÿ óëüòðàô³îëåòîâèì [ÓÔ-]ïðîìåíåì X-ray ~ ðåíòãåí³âñüêå åêñïîíóâàííÿ expression requirements òåõí³÷íå çàâäàííÿ extinction çàãàñàííÿ extraction âèòÿãàííÿ; åêñòðàêö³ÿ carrier ~ åêñòðàêö³ÿ íîñ³¿â chip-carrier ~ äåìîíòàæ êðèñòàëîíîñ³ÿ fume ~ âèäàëåííÿ øê³äëèâî¿ ïàðè heat ~ â³äâåäåííÿ òåïëà plasma ~ åêñòðàêö³ÿ ïëàçìè
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fac extractor: DIP ~ ïðèñòîñóâàííÿ äëÿ äåìîíòàæó êîðïóñó òèïó DIP photoresist ~ ïðèñòð³é äëÿ (íåçàáðóäíþþ÷îãî) âèäàëåííÿ ôîòîðåçèñòà ç ì³ñòêîñò³ extrinsic äîì³øêîâèé (ïðî åëåêòðîïðîâ³äí³ñòü) extrusion 1. åêñòðóç³ÿ (ïîë³ìåð³â) 2. øòàìïóâàííÿ; ïðåñóâàííÿ eye: laser ~ ëàçåðíå îêî (äëÿ âèçíà÷åííÿ êðàþ ïðè ëàçåðí³é ï³äãîíö³ ðåçèñòîð³â â ÍÑ) «eyeballing» â³çóàëüíèé êîíòðîëü
volume ~ âåëèêîñåð³éíå âèðîáíèöòâî X-ray ~ âèãîòîâëåííÿ ²Ñ ìåòîäîì ðåíòãåí³âñüêî¿ ë³òîãðàô³¿ face 1. (ëèöüîâà) ïîâåðõíÿ; ïëîùèíà 2. ãðàíü (êðèñòàëà) 3. åêðàí (ÅÏÒ) cleavage ~ ïëîùèíà ñïàéíîñò³ crystal ~ ãðàíü êðèñòàëà lapped ~ øë³ôîâàíà ïîâåðõíÿ; ïîë³ðîâàíà ïîâåðõíÿ 100 plane ~ ãðàíü, ðîçòàøîâàíà â êðèñòàëîãðàô³÷í³é ïëîùèí³ 100 facet 1. (çîâí³øíÿ) ãðàíü (êðèñòàëà) 2. ôàñåò | óòâîðþâàòè ôàñåòè, ôàñåòóâàòè (ïðè âèðîùóâàíí³ ìîíîêðèñòàë³â) facilit/y 1. ïðèñòð³é; óñòàíîâêà 2. ðl óñòàòêóâàííÿ; çàñîáè; àïàðàòóðà 3. pl F ìîæëèâîñò³ application development ~ ï³äñèñòåìà fabrication âèãîòîâëåííÿ; âèðîáíèöòâî ðîçðîáêè ïðèêëàäíèõ ïðîãðàì all-ion-bombardment ~ âèãîòîâëåííÿ ²Ñ computer-aided design ~ies çàñîáè ìåòîäîì ³îííî¿ ³ìïëàíòàö³¿ àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ batch ~ âèãîòîâëåííÿ ïðèëàä³â ìåòîäîì custom ~ies àïàðàòóðà äëÿ ðîçðîáêè ãðóïîâî¿ òåõíîëî㳿 çàìîâëåíèõ ²Ñ continuous-ñócle ~ âèðîáíèöòâî (ïðèëàä³â) design ~ies àïàðàòóðà äëÿ ïðîåêòóâàííÿ ç áåçïåðåðâíèì öèêëîì desk-top prototyping ~ íàñò³ëüíà óñòàíîâêà electron-beam ~ âèãîòîâëåííÿ ²Ñ çà äëÿ âèãîòîâëåííÿ äîñë³äíèõ çðàçê³â (²Ñ) åëåêòðîííî-ïðîìåíåâîþ òåõíîëî㳺þ diagnostic ~ies çàñîáè ä³àãíîñòèêè fine-pattern ~ ôîðìóâàííÿ ìàëþíêà ç DI water ~ies óñòàòêóâàííÿ äëÿ îòðèìàííÿ åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â äå³îí³çîâàíî¿ âîäè flexible ~ ãíó÷êå àâòîìàòèçîâàíå fabrication ~ies òåõíîëîã³÷íå óñòàòêóâàííÿ âèðîáíèöòâî, ÃÀ industrial ~ies âèðîáíè÷å óñòàòêóâàííÿ high throughput ~ âåëèêîñåð³éíå in-house ~ óñòàòêóâàííÿ äëÿ âëàñíîãî âèðîáíèöòâî; âèðîáíèöòâî ç âèñîêîþ âèðîáíèöòâà ïðîäóêòèâí³ñòþ major IC ~ies óñòàòêóâàííÿ äëÿ high-volume ~ âåëèêîñåð³éíå âèðîáíèöòâî âåëèêîñåð³éíîãî âèðîáíèöòâà ²Ñ in-house ~ âëàñíå âèðîáíèöòâî operational development test ~ çàñ³á ion-implantation ~ âèãîòîâëåííÿ ²Ñ âåðèô³êàö³¿ ïðîåêòó Â²Ñ íà ìåòîäîì ³îííî¿ ³ìïëàíòàö³¿ ôóíêö³îíàëüíîìó ð³âí³ (çà äîïîìîãîþ large-batch ~ âèãîòîâëåííÿ (ïðèëàä³â) òåñò³â) âåëèêèìè ïàðò³ÿìè; âåëèêîñåð³éíå processing ~ies òåõíîëîã³÷íå óñòàòêóâàííÿ âèðîáíèöòâî turnkey manufacturing ~ âèðîáíè÷å large-scale ~ âåëèêîñåð³éíå âèðîáíèöòâî óñòàòêóâàííÿ «ï³ä êëþ÷» laser ~ âèðîáíèöòâî ³ç çàñòîñóâàííÿì white-room ~ies óñòàòêóâàííÿ äëÿ ÷èñòèõ ëàçåðíî¿ òåõíîëî㳿 âèðîáíè÷èõ ïðèì³ùåíü low-volume ~ äð³áíîñåð³éíå âèðîáíèöòâî factor 1. êîåô³ö³ºíò; ìíîæíèê 2. ïîêàçíèê; nanoscale [nanostructure] ~ ôîðìóâàííÿ ôàêòîð ñòðóêòóð ç íàíîìåòðîâèìè ðîçì³ðàìè absorption ~ ïîêàçíèê ïîãëèíàííÿ åëåìåíò³â alpha current ~ êîåô³ö³ºíò ïåðåäà÷³ photolithographic circuit ~ âèãîòîâëåííÿ ²Ñ åì³òåðíîãî ñòðóìó òðàíçèñòîðà â ñõåì³ ³ç ìåòîäîì ôîòîë³òîãðàô³¿ çàãàëüíîþ áàçîþ, àëüôà, á
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fau amplification ~ êîåô³ö³ºíò ï³äñèëåííÿ avalanche multiplication ~ êîåô³ö³ºíò ëàâèííîãî ìíîæåííÿ beta-current gain ~ êîåô³ö³ºíò ï³äñèëåííÿ òðàíçèñòîðà ïî ñòðóìó â ñõåì³ ³ç çàãàëüíèì åì³òåðîì, áåòà, â compensation ~ ñòóï³íü êîìïåíñàö³¿ (íàïð. äîì³øêè) complexity ~ ñòóï³íü ³íòåãðàö³¿ conversion ~ 1. êîåô³ö³ºíò ïåðåòâîðåííÿ 2. ïåðåâ³äíèé ìíîæíèê correction ~ ïîïðàâî÷íèé êîåô³ö³ºíò cost-of-error ~ ïîêàçíèê âàðòîñò³ çáîþ (ïðè ïðîåêòóâàíí³ öèôðîâî¿ Â²Ñ) current amplification ~ êîåô³ö³ºíò ï³äñèëåííÿ ïî ñòðóìó current multiplication ~ êîåô³ö³ºíò ìíîæåííÿ ñòðóìó degeneracy ~ ñòóï³íü âèðîäæåííÿ dielectric dissipation ~ òàíãåíñ êóòà ä³åëåêòðè÷íèõ âòðàò diffusion ~ êîåô³ö³ºíò äèôó糿 dissipation ~ òàíãåíñ êóòà ä³åëåêòðè÷íèõ âòðàò etch ~ ïîêàçíèê òðàâëåííÿ (â³äíîøåííÿ ãëèáèíè òðàâëåííÿ äî øèðèíè) gain ~ êîåô³ö³ºíò ï³äñèëåííÿ injection ~ êîåô³ö³ºíò ³íæåêö³¿ noise ~ êîåô³ö³ºíò øóìó, øóì-ôàêòîð power amplification ~ êîåô³ö³ºíò ï³äñèëåííÿ ïî ïîòóæíîñò³ reflection ~ êîåô³ö³ºíò â³äáèòòÿ scale [scaling] ~ ìàñøòàáíèé êîåô³ö³ºíò, êîåô³ö³ºíò ìàñøòàáóâàííÿ Stability ~ êîåô³ö³ºíò ñò³éêîñò³; çàïàñ ñò³éêîñò³ transport ~ êîåô³ö³ºíò ïåðåíåñó utilization ~ ñòóï³íü âèêîðèñòàííÿ (íàïð. ïëîù³ êðèñòàëà) voltage amplification ~ êîåô³ö³ºíò ï³äñèëåííÿ ïî íàïðóç³ weight(ing)~ âàãîâèé êîåô³ö³ºíò, âàãîâèé ìíîæíèê yield ~ ÷èííèê, ùî âïëèâຠíà â³äñîòîê âèõîäó ãîäíèõ fail-proof áåçâ³äìîâíèé fail-safe íàä³éíèé failure â³äìîâà; ïîøêîäæåííÿ; íåñïðàâí³ñòü bond ~ ïîðóøåííÿ ç’ºäíàííÿ
catastrophic ~ êàòàñòðîô³÷íà â³äìîâà; ðàïòîâà â³äìîâà complete ~ ïîâíà â³äìîâà degradation ~ ïîñòóïîâà â³äìîâà die ~ íåñïðàâí³ñòü â êðèñòàë³ ²Ñ girth die ~ ïåðèôåð³éíèé äåôåêò íà êðèñòàë³ infant ~ ðàííÿ â³äìîâà partial ~ ÷àñòêîâà â³äìîâà post-delivery ~ â³äìîâà, âèÿâëåíà ï³ñëÿ ïîñòàâêè (íàïð. ²Ñ) premature ~ ðàííÿ â³äìîâà qualification ~ â³äìîâà, âèÿâëåíà ïðè êâàë³ô³êàö³éíèõ âèïðîáóâàííÿõ soft ~ ïîòåíö³éíà íåñïðàâí³ñòü fallouts ùî â³äìîâèëè ïðèëàäè family: ~ characteristics ñ³ìåéñòâî õàðàêòåðèñòèê block-structured ~ ñåð³ÿ ²Ñ ç áëîêîâîþ ñòðóêòóðîþ chip ~ ñåð³ÿ ²Ñ logic ~ ñåð³ÿ ëîã³÷íèõ ñõåì memory ~ ñåð³ÿ ÇÓ standard ~ ñåð³ÿ ñòàíäàðòíèõ ïðèëàä³â fan-in êîåô³ö³ºíò îá’ºäíàííÿ ïî âõîäó fan-out 1. ðîçãàëóæåííÿ 2. íàâàíòàæóâàëüíà çäàòí³ñòü (ïî âèõîäó); êîåô³ö³ºíò ðîçãàëóæåííÿ ïî âèõîäó fashion: piggyback ~ ñïîñ³á ðîçì³ùåííÿ îäí³º¿ ²Ñ íà ³íø³é (äëÿ åêîíî쳿 ïëîù³ ïëàòè) fault ïîøêîäæåííÿ; íåñïðàâí³ñòü, äåôåêò ac ~ äèíàì³÷íà íåñïðàâí³ñòü AND-bridge ~ íåñïðàâí³ñòü òèïó «ìîíòàæíå ²» branch-open ~ íåñïðàâí³ñòü òèïó «îáðèâ ã³ëêè» (â ÌÎÍ ²Ñ) branch-short ~ íåñïðàâí³ñòü òèïó «çàìèêàííÿ ã³ëêè» (â ÌÎÍ ²Ñ) bridge [bridging] ~ íåñïðàâí³ñòü òèïó «êîðîòêå çàìèêàííÿ» coupling ~ äåôåêò ÇÓÏ òèïó «ç÷åïëåííÿ» dc ~ ñòàòè÷íà íåñïðàâí³ñòü delay ~ íåñïðàâí³ñòü òèïó «íåâ³ðíà âåëè÷èíà çàòðèìêè» detectable ~ íåñïðàâí³ñòü, ùî ïåðåâ³ðÿºòüñÿ çà äîïîìîãîþ òåñòó detected ~ ïåðåâ³ðåíà íåñïðàâí³ñòü dynamic ~ äèíàì³÷íà íåñïðàâí³ñòü floatingdate ~ íåñïðàâí³ñòü òèïó «ïëàâàþ÷èé çàòâîð» (â ÌÎÍ ²Ñ)
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fee functional ~ ôóíêö³îíàëüíà ïîìèëêà hazardously detectable ~ íåñïðàâí³ñòü, ùî âèÿâëÿºòüñÿ ÿê çá³é hyperactive ~ íàäàêòèâíà íåñïðàâí³ñòü (ùî ðîáèòü âïëèâ íà âåëèêå ÷èñëî ê³ë) input stuck-at ~ êîíñòàíòíà íåñïðàâí³ñòü íà âõîä³ internal ~ âíóòð³øí³é äåôåêò (íàïð. â ñòàíäàðòí³é êîì³ðö³ ²Ñ) intragate ~ íåñïðàâí³ñòü óñåðåäèí³ ëîã³÷íîãî åëåìåíòó irredundant ~ ³ñòîòíà íåñïðàâí³ñòü MOS-stuck ~ íåñïðàâí³ñòü òèïó «ïëàâàþ÷èé çàòâîð» (â ÌÎÍ ²Ñ) multiple ~ êðàòíà íåñïðàâí³ñòü multiple àñcess ~ íåñïðàâí³ñòü òèïó «ïàðàëåëüíèé äîñòóï» nonfeedback bridging ~ íåñïðàâí³ñòü òèïó «êîðîòêå çàìèêàííÿ», ÿêà íå ñòâîðþº çâîðîòí³é çâ’ÿçîê nonstuck ~ íåêîíñòàíòíà [íåïîñò³éíà] íåñïðàâí³ñòü open ~ íåñïðàâí³ñòü òèïó «îáðèâ êîëà» OR-bridge ~ íåñïðàâí³ñòü òèïó «ìîíòàæíå ÀÁλ pattern ~ ñïîòâîðåííÿ ìàëþíêà pattern sensitive ~ íåñïðàâí³ñòü, ïîâ’ÿçàíà ³ç ñïðèéíÿòëèâ³ñòþ äî íàáîð³â äàíèõ (äåôåêò ÇÓÏÂ) permanent ~ ñò³éêà íåñïðàâí³ñòü pin ~ íåñïðàâí³ñòü íà êîíòàêò³ redundant ~ íå³ñòîòíà íåñïðàâí³ñòü short ~ íåñïðàâí³ñòü òèïó «êîðîòêå çàìèêàííÿ» short diffusions ~ íåñïðàâí³ñòü òèïó ïåðåìè÷êè ì³æ øàðàìè (íàï³âïðîâ³äíèêîâî¿ ²Ñ) single-stuck ~ îäèíî÷íà êîíñòàíòíà íåñïðàâí³ñòü stacking ~ äåôåêò óïàêîâêè static ~ ñòàòè÷íà íåñïðàâí³ñòü stuck-at ~ êîíñòàíòíà [ïîñò³éíà] íåñïðàâí³ñòü (ïðè ÿê³é ñõåìà óòðèìóºòüñÿ â îäíîìó ñòàí³) stuck-at-one ~ íåñïðàâí³ñòü, âñòàíîâëåíà â ñòàí «1» stuck-at-open ~ íåñïðàâí³ñòü òèïó «îáðèâ êîëà» stuck-at-short ~ íåñïðàâí³ñòü òèïó «êîðîòêå çàìèêàííÿ»
stuck-at-X ~ íåñïðàâí³ñòü òèïó «ïîñò³éíå íåâ³äîìå çíà÷åííÿ» stuck-at-Z ~ íåñïðàâí³ñòü òèïó «ïîñò³éíèé âèñîêî³ìïåäàíñíèé ñòàí» sluck-at-zero ~ íåñïðàâí³ñòü, âñòàíîâëåíà â ñòàí «0» stuck-high ~ íåñïðàâí³ñòü, âñòàíîâëåíà â ñòàí «1» stuck-low ~ íåñïðàâí³ñòü, âñòàíîâëåíà â ñòàí «0» timing ~s òèì÷àñîâ³ äåôåêòè fault-free áåçäåôåêòíèé; ñïðàâíèé feasibility: engineering ~ ìîæëèâ³ñòü òåõí³÷íî¿ ðåàë³çàö³¿ feature 1. (õàðàêòåðíà) âëàñòèâ³ñòü; îñîáëèâ³ñòü; îçíàêà 2. òîïîëîã³÷íèé åëåìåíò; (òîïîëîã³÷íèé) ðîçì³ð åëåìåíòó design ~ îñîáëèâ³ñòü êîíñòðóêö³¿ (íàïð. ²Ñ) device ~ òîïîëîã³÷íèé åëåìåíò ïðèëàäó mask ~ òîïîëîã³÷íèé åëåìåíò øàáëîíà topographical ~ òîïîëîã³÷íèé åëåìåíò feed ïîäà÷à; æèâëåííÿ | ïîäàâàòè; æèâèòè belt ~ ïîäà÷à íà ñòð³÷êîâîìó òðàíñïîðòåð³ bowl ~ ïîäà÷à ç áóíêåðíîãî äæåðåëà æèâëåííÿ cassette-to-cassette ~ ïîäà÷à ç êàñåòè â êàñåòó in-line ~ ïîäà÷à íà ïîòîêîâ³é òåõíîëîã³÷íî¿ ë³í³¿ magazine ~ ìàãàçèííà ïîäà÷à feedback çâîðîòí³é çâ’ÿçîê capacitive ~ çâîðîòí³é çâ’ÿçîê ºìíîñò³ local ~ ëîêàëüíèé çâîðîòí³é çâ’ÿçîê negative ~ íåãàòèâíèé çâîðîòí³é çâ’ÿçîê on-line ~ áåçïîñåðåäí³é çâîðîòí³é çâ’ÿçîê positive ~ ïîçèòèâíèé çâîðîòí³é çâ’ÿçîê strong ~ ñèëüíèé çâîðîòí³é çâ’ÿçîê weak ~ ñëàáêèé çâîðîòí³é çâ’ÿçîê feeder äæåðåëî æèâëåííÿ, ïîäàþ÷èé ïðèñòð³é belt ~ ñòð³÷êîâå äæåðåëî æèâëåííÿ bowl ~ áóíêåðíå äæåðåëî æèâëåííÿ magazine-to-magazine ~ ïðèñòð³é äëÿ ïîäà÷³ (íàïð. ï³äêëàäîê) ç ìàãàçèíà â ìàãàçèí reel ~ ïîäàþ÷èé ïðèñòð³é äëÿ êîìïîíåíò³â â ñòð³÷êîâ³é óïàêîâö³ vibration ~ â³áðàö³éíèé æèâèëüíèê feedforward ïðÿìèé çâ’ÿçîê feedthrough 1. ì³æøàðîâå ç’ºäíàííÿ (â ²Ñ) 2.
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FET ìåòàë³çîâàíèé îòâ³ð (â äðóêîâàí³é ïëàò³) ferromask ôîòîøàáëîí ç øàðîì îêñèäó çàë³çà FET ïîëüîâèé òðàíçèñòîð, ÏÒ barrier-gate ~ ïîëüîâèé òðàíçèñòîð ³ç çàòâîðîì Øîòê³ bipolar inversion channel ~ á³ïîëÿðíèé òðàíçèñòîð ç áàçîþ ó âèãëÿä³ ³íâåðñ³éíîãî êàíàëó, êåðîâàíîãî åôåêòîì ïîëÿ Bloch ~ ïîëüîâèé òðàíçèñòîð ç áëîõ³âñüêèìè îñöèëÿö³ÿìè buried-channel ~ ïîëüîâèé òðàíçèñòîð ç ïðèõîâàíèì êàíàëîì charge-coupled ~ êîìá³íîâàíà íàï³âïðîâ³äíèêîâà ñòðóêòóðà íà ÏÇÇ ³ ïîëüîâèõ òðàíçèñòîðàõ closed-geometry ~ ïîëüîâèé òðàíçèñòîð ³ç çàìêíóòîþ ãåîìåòð³ºþ compound ~ 1. ñêëàäíèé ïîëüîâèé òðàíçèñòîð (ñêëàäàºòüñÿ ç äâîõ ïîëüîâèõ òðàíçèñòîð³â, âèãîòîâëåíèõ â îäí³é ï³äêëàäö³) 2. ïîëüîâèé òðàíçèñòîð íà íàï³âïðîâ³äíèêîâîìó ç’ºäíàíí³ conductor-insulator-semiconductor ~ ÌÄÍòðàíçèñòîð depletion(-mode) ~ ïîëüîâèé òðàíçèñòîð, ùî ïðàöþº â ðåæèì³ çá³äíåííÿ dual-gate ~ ïîëüîâèé òðàíçèñòîð äâîõçàòâîðà enhancement(-mode)~ ïîëüîâèé òðàíçèñòîð, ùî ïðàöþº â ðåæèì³ çáàãà÷åííÿ floating-gate ~ ïîëüîâèé òðàíçèñòîð ç ïëàâàþ÷èì çàòâîðîì heterointerface ~ ïîëüîâèé òðàíçèñòîð ç ãåòåðîïåðåõîäîì, ãåòåðîñòðóêòóðíèé ïîëüîâèé òðàíçèñòîð heterostructure insulated-gate ~ ãåòåðîñòðóêòóðíèé ïîëüîâèé òðàíçèñòîð ç ³çîëüîâàíèì çàòâîðîì high-ðårformance ~ âèñîêîÿê³ñíèé ïîëüîâèé òðàíçèñòîð infrared ~ ïîëüîâèé òðàíçèñòîð, ÷óòëèâèé äî ³íôðà÷åðâîíîãî [ÓÔ-] âèïðîì³íþâàííÿ insulated-gate ~ ïîëüîâèé òðàíçèñòîð ç ³çîëüîâàíèì çàòâîðîì ion-implanted ~ ³îííî-³ìïëàíòîâàíèé ïîëüîâèé òðàíçèñòîð ion-sensitive ~ ïîëüîâèé òðàíçèñòîð, ÷óòëèâèé äî ïåâíèõ ³îí³â â ðîç÷èí³ junction(-gate)~ ïîëüîâèé òðàíçèñòîð ç ð– n-ïåðåõîäîì ÿê çàòâîð
K-band ~ ïîëüîâèé òðàíçèñòîð Ê-ä³àïàçîíà (18–26 ÃÃö) lateral ~ ãîðèçîíòàëüíèé ïîëüîâèé òðàíçèñòîð MBE ~ ïîëüîâèé òðàíçèñòîð, ñôîðìîâàíèé ìîëåêóëÿðíîïó÷êîâîþ åï³òàêñ³ºþ metal-gate ~ ïîëüîâèé òðàíçèñòîð ç ìåòàëåâèì çàòâîðîì; ãîðèçîíòàëüíèé ïîëüîâèì òðàíçèñòîð metal-insulator-semiconductor ~ ÌÄÍòðàíçèñòîð metal-îõide-semiconductor ÌÎÍòðàíçèñòîð (äèâ. ò-æ MOSFET) metal-Schottky [metal-semiconductor] ~ ïîëüîâèé òðàíçèñòîð ³ç çàòâîðîì Øîòê³ microwave ~ ïîëüîâèé ÍÂ×-òðàíçèñòîð modulation-doped ~ ïîëüîâèé òðàíçèñòîð ç íåîäíîð³äíèì [ìîäóëüîâàíèì] ëåãóâàííÿì multichannel ~ áàãàòîêàíàëüíèé ïîëüîâèé òðàíçèñòîð multiple-gate finger ~ ïîëüîâèé òðàíçèñòîð ç ãðåá³í÷àñòèìè çàòâîðàìè nanometer-scale ~ ïîëüîâèé òðàíçèñòîð ç íàíîìåòðîâèìè ðîçì³ðàìè åëåìåíò³â n-channel [negative] ~ ïîëüîâèé òðàíçèñòîð ç êàíàëîì n-òèïó negative resistance ~ ïîëüîâèé òðàíçèñòîð ç íåãàòèâíèì îïîðîì normally-off ~ ïîëüîâèé òðàíçèñòîð, ùî ïðàöþº â ðåæèì³ çáàãà÷åííÿ normally-on ~ ïîëüîâèé òðàíçèñòîð, ùî ïðàöþº â ðåæèì³ çá³äíåííÿ offset-gate ~ ïîëüîâèé òðàíçèñòîð ³ç çì³ùåíèì çàòâîðîì p-channel ~ ïîëüîâèé òðàíçèñòîð ç êàíàëîì ð-òèïó photo(sensitive) ~ ïîëüîâèé ôîòîòðàíçèñòîð p–n-junction ~ ïîëüîâèé òðàíçèñòîð ç êåð³âíèêîì ð–n-ïåðå-õîäîì positive-type ~ ïîëüîâèé òðàíçèñòîð ç êàíàëîì ð-òèïó resonant tunneling ~ ïîëüîâèé òðàíçèñòîð ç ðåçîíàíñíèì òóíåëþâàííÿì Schottky-diode [Schottky-gate] ~ ïîëüîâèé òðàíçèñòîð ³ç çàòâîðîì Øîòê³ self-aligned (gate) ~ ïîëüîâèé òðàíçèñòîð ç ñàìîñóì³ùåíèì çàòâîðîì, ñàìîñóì³ùåí³ ïîëüîâ³ òðàíçèñòîðè short-channel ~ ïîëüîâèé òðàíçèñòîð ç êîðîòêèì êàíàëîì
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fil short gate-length ~ ïîëüîâèé òðàíçèñòîð ç êîðîòêèì çàòâîðîì silicon-gate ~ ïîëüîâèé òðàíçèñòîð ç êðåìí³ºâèì çàòâîðîì tunneling-transfer ~ ïîëüîâèé òðàíçèñòîð ç òóíåëüíèì ïåðåíîñîì (íîñ³¿â) two-dimensional electron-gas ~ ïîëüîâèé òðàíçèñòîð ç äâîâèì³ðíèì åëåêòðîííèì ãàçîì unipolar ~ ïîëüîâèé òðàíçèñòîð, ÏÒ vertical-channel [vertical-structure] ~ âåðòèêàëüíèé ïîëüîâèé òðàíçèñòîð V-gate ~ ïîëüîâèé òðàíçèñòîð ç V-ïîä³áíèì çàòâîðîì ä(-doped)~ ïàëåâî¿ òðàíçèñòîð ç ä ëåãîâàíèì êàíàëîì fidelity: geometric ~ òî÷í³ñòü [â³ðí³ñòü] ãåîìåòðè÷íèõ ðîçì³ð³â (íàïð. ²Ñ) printing ~ òî÷í³ñòü (òðàôàðåòíîãî) äðóêó field 1. ïîëå; îáëàñòü 2. ä³ëÿíêà ïîâåðõí³ êðèñòàëà ì³æ êîìïîíåíòàìè analog ~ àíàëîãîâà òåõí³êà bubble collapse ~ ïîëå êîëàïñó ÖÌÄ built-in ~ âáóäîâàíå ïîëå; ïîëå ð–nïåðåõîäó character string ~ ïîëå ðÿäêà ñèìâîë³â, ñèìâîëüíå [òåêñòîâå] ïîëå digital ~ öèôðîâà òåõí³êà drive ~ óïðàâëÿþ÷å ïîëå (ÖÌÄ) extension ~ îáëàñòü ðîçøèðåííÿ fixed ~ ô³êñîâàíà îáëàñòü image ~ ïîëå çîáðàæåííÿ multipolar magnetic ~ áàãàòîïîëþñíå ìàãí³òíå ïîëå threshold ~ ïîðîãîâå ïîëå field-programmable ïðîãðàìîâàíèé êîðèñòóâà÷åì figure 1. ÷èñëî; öèôðà 2. ô³ãóðà; ìàëþíîê 3. êîåô³ö³ºíò; ïîêàçíèê ~ merit 1. ïîêàçíèê ÿêîñò³ 2. äîáðîòí³ñòü etch ~ ô³ãóðà òðàâëåííÿ noise ~ êîåô³ö³ºíò øóìó, øóì-÷èííèê file 1. ôàéë ( ôîðìóâàòè ôàéë; çáåð³ãàòè ó ôàéë³ 2. êàðòîòåêà; àðõ³â brought-forward ~ ôàéë, ùî ïðåä’ÿâëÿºòüñÿ carried-forward ~ îäåðæóâàíèé ôàéë hash random ~ ôàéë ç äîâ³ëüíîþ îðãàí³çàö³ºþ history ~ àðõ³âíèé ôàéë
input-state-output ~ ôàéë ñèñòåìè ìîäåëþâàííÿ, ùî ì³ñòèòü â³äîìîñò³ ïðî âõîäè, âèõîäè ³ ñòàí åëåìåíòà àáî âóçëà register ~ ðåã³ñòðîâèé ôàéë filing: electronic ~ åëåêòðîííèé àðõ³â fill and spill çàïîâíåííÿ (ïîòåíö³éíèõ ÿì) ³ ³íæåêö³ÿ çàðÿä³â (â ÏÇÇ) filler: organic ~ îðãàí³÷íèé íàïîâíþâà÷ thixotropic ~ òèêñîòðîïíèé íàïîâíþâà÷ filling: dioxide ~ çàïîâíåííÿ (íàïð. êàíàâîê) ä³îêñèäîì êðåìí³þ hole ~ çàïîâíåííÿ îòâîð³â (äëÿ ì³æð³âíåâèõ ç’ºäíàíü) film 1. ïë³âêà; òîíêèé øàð 2. ôîòîïë³âêà; ê³íîïë³âêà base ~ íåñó÷à ïë³âêà boundary ~ ãðàíè÷íà ïë³âêà chemical vapor deposition ~ ïë³âêà, õ³ì³÷íî îñàäæåíà ç ïàðîâî¿ ôàçè compound ~ ïë³âêà õ³ì³÷íîãî ç’ºäíàííÿ contaminant-free ~ ïë³âêà áåç ñòîðîíí³õ âêëþ÷åíü (âêðàïëåíü) electrodeposited ~ ïë³âêà, ñôîðìîâàíà åëåêòðîë³òè÷íèì îñàäæåííÿì epitaxial [epitaxially grown] ~ åï³òàêñ³àëüíà ïë³âêà exposed ~ åêñïîíîâàíà ïë³âêà field-îõide ~ çàõèñíà îêñèäíà ïë³âêà gate insulating ~ ³çîëþþ÷à ïë³âêà çàòâîðà hardened ~ 1. çàòâåðä³ëà ïë³âêà 2. çàäóáëåíà ïë³âêà heteroepitaxial ~ ãåòåðîåï³òàêñ³àëüíà ïë³âêà interfacial layer ~ ïë³âêà íà ìåæ³ ðîçä³ëó kapton ~ êàïòîíîâà [ïîë³ì³äíà] ïë³âêà KPR ~ ïë³âêà ôîòîðåçèñòà ô³ðìè «Êîäàê» laminate ~ áàãàòîøàðîâà ïë³âêà Langmuir-Blodgett [LB] ïë³âêà Ëàíãìþðà– Áëîäæåòà (îðãàí³÷íà ïë³âêà äëÿ ìîëåêóëÿðíî¿ åëåêòðîí³êè) magnetic-bubble ~ ïë³âêà ç ÖÌÄ mask(ing)~ ìàñêóþ÷à ïë³âêà metal-insulator-metal ~ ïë³âêà ³ç ñòðóêòóðîþ ìåòàë–ä³åëåêòðèê–ìåòàë, ÌÄÌ-ïë³âêà monomolecular ~ ìîíîìîëåêóëÿðíà ïë³âêà mylar ~ ìàéëàðîâà ïë³âêà oxidation-barrier ~ øàð, ïåðåøêîäæàþ÷èé îêñèäóâàííþ (íàïð. ìàñêóþ÷èé øàð)
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fis oxynitride ~ îêñèí³òðèäíà ïë³âêà patterned ~ ñòðóêòóðîâàíà ïë³âêà plasma-laser deposition [PLD] ~ ïë³âêà, îäåðæàíà ëàçåðíèì ðîçïèëþâàííÿì â ïëàçì³ ðåàêòèâíîãî ãàçó, ïë³âêà, îäåðæàíà ìåòîäîì ïëàçìî-ëàçåðíîãî îñàäæåííÿ polyimide ~ ïîë³ì³äíà ïë³âêà polymer thick ~ 1. ïîë³ìåðíà òîâñòà ïë³âêà 2. pl ïîë³ìåðíà òîâñòîïë³âêîâà òåõíîëîã³ÿ release ~ ïë³âêà, ùî çí³ìàºòüñÿ resist ~ ïë³âêà ðåçèñòà resistive ~ ðåçèñòèâíà ïë³âêà semiconductor-on-insulator thin ~ òîíêà ïë³âêà ³ç ñòðóêòóðîþ òèïó «íàï³âïðîâ³äíèê íà ä³åëåêòðèö³» shield (ing) ~ åêðàíóþ÷à ïë³âêà; ìàñêóþ÷à ïë³âêà single-crystal ~ ìîíîêðèñòàë³÷íà ïë³âêà solid photoresist ~ ïë³âêà ñóõîãî ôîòîðåçèñòà sputtered ~ ïë³âêà, ñôîðìîâàíà ìåòîäîì ðîçïèëþâàííÿ substrate ~ ïë³âêà, ùî ñëóæèòü ï³äêëàäêîþ superlattice Langmuir–Blodgett ~s ïë³âêà Ëàíãìþðà–Áëîäæåòà äëÿ ôîðìóâàííÿ íàäãðàòîê thermally grown ~ ïë³âêà, âèðîùåíà ìåòîäîì òåðìîâàêóóìíîãî îñàäæåííÿ thick ~s 1. òîâñò³ ïë³âêè 2. òîâñòîïë³âêîâ³ Ã²Ñ thin ~s 1. òîíê³ ïë³âêè 2. òîíòîïë³âêîâ³ Ã²Ñ transparent ~ ïðîçîðà ïë³âêà vacuum-deposited ~ ïë³âêà, ñôîðìîâàíà ìåòîäîì òåðìîâàêóóìíîãî îñàäæåííÿ wiring multilayer ~ ïë³âêà áàãàòîð³âíåâèõ ç’ºäíàíü filter ô³ëüòð | ô³ëüòðóâàòè acoustic (-wave) ~ àêóñòè÷íèé ô³ëüòð band-pass ~ ñìóãîâèé ô³ëüòð bipolar ~ á³ïîëÿðíà ²Ñ ô³ëüòðó cartridge ~ ïàòðîííèé ô³ëüòð CCD ~ ô³ëüòð íà ÏÇÇ charge-domain ~ ô³ëüòð íà ïðèëàäàõ ³ç çàðÿäíèìè äîìåíàìè (âàð³àíò ô³ëüòð³â íà ÏÇÇ) cloth ~ òêàíèííèé ô³ëüòð CMOS ~ êîìïëåìåíòàðíà ÌÎÍ ²Ñ ô³ëüòðó, ÊÌÎÍ ²Ñ ô³ëüòðó codec ~ ô³ëüòð êîäåêà coding ~ êîäóþ÷èé ô³ëüòð
crystal ~ êâàðöîâèé ô³ëüòð digital ~ öèôðîâèé ô³ëüòð disk ~ äèñêîâèé ô³ëüòð (äëÿ ô³ëüòðàö³¿ ð³äèí ³ ãàç³â) gyrator ~ ô³ëüòð íà ã³ðàòîðàõ integrated (-circuit) ~ ²Ñ ô³ëüòðà integrated-injection logic ~ ô³ëüòð íà ëîã³÷í³é ²Ñ ç ³íæåêö³éíèì æèâëåííÿì monolithic ~ ìîíîë³òíà ²Ñ ô³ëüòðó orthogonal-propagation SAW ~ ô³ëüòð íà ÏÀÕ ç îðòîãîíàëüíèì ðîçïîâñþäæåííÿì àêóñòè÷íèõ õâèëü recursive ~ ðåêóðñèâíèé ô³ëüòð single-chip ~ îäíîêðèñòàëüíèé ô³ëüòð SIP ~ ô³ëüòð â ïëîñêîìó êîðïóñ³ ç îäíîðÿäíèì ðîçòàøóâàííÿì âèâîä³â surface(-acoustic)-wave ~ ô³ëüòð íà ÏÀÕ, ÏÀÕ-ô³ëüòð switched-capacitor ~ ô³ëüòð ç êîíäåíñàòîðàìè, ùî ïåðåìèêàþòüñÿ fin: cooling [heat] ~ ðàä³àòîð [ðåáðî] òåïëîâ³äâîäó fine-line ïðåöèç³éíèé; ç åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â finger: base ~ áàçîâà ñìóæêà (òðàíçèñòîðà ç ïðîíèêíîþ áàçîþ) gate ~s çóáö³ çàòâîðà (ïàëåâîãî òðàíçèñòîðà) lead ~ ñòîâï÷èêîâèé âèâ³ä, êîíòàêòíèé ñòîâï÷èê multiple-gate ~s çóáö³ çàòâîðà ç ãðåá³í÷àñòîþ ñòðóêòóðîþ finish 1. ô³í³øíà îáðîáêà 2. ñòóï³íü øîðñòêîñò³ ïîâåðõí³ bright ~ äçåðêàëüíà ïîë³ðîâêà fine ~ íèçüêà øîðñòê³ñòü ïîâåðõí³ mirror(-like) [optical] ~ äçåðêàëüíà ïîë³ðîâêà surface ~ ÷èñòîòà îáðîáêè ïîâåðõí³ firing: thick-film ~ âèïàëåííÿ [âïàëåííÿ] òîâñòèõ ïë³âîê (ó âèðîáíèöòâ³ òîâñòîïë³âêîâèõ òÑ) firmware ïðîãðàìíî-àïàðàòíå çàáåçïå÷åííÿ fisheye äåôåêò òèïó «ðèá’ÿ÷å îêî» (êðàòåð â øàð³ ôîòîðåçèñòà ï³ñëÿ åêñïîíóâàííÿ) fissure òð³ùèíà; ì³êðîòð³ùèíà | óòâîðþâàòè òð³ùèíè
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flu fit 1. ï³äãîíêà | ï³äãàíÿòè 2. â³äïîâ³äí³ñòü | â³äïîâ³äàòè 3. âñòàíîâëþâàòè; âìîíòîâóâàòè fixture çàòèñê; îáëÿìîâóâàííÿ; îñíàùåííÿ assembly ~ ïðèñòîñóâàííÿ äëÿ çá³ðêè; ñêëàäàëüíà êàñåòà bonding ~ îñíàùåííÿ äëÿ (òåðìîêîìïðåñ³éíî¿) çâàðêè planetary ~ ïëàíåòàðíèé ïðèñòð³é (ó âàêóóìí³é íàïèëþâàëüí³é óñòàíîâö³) flag: framing error ~ îçíàêà ïîìèëêè ó ôîðìàò³ (â ïðîöåñîðíèõ ²Ñ) hazard status ~ îçíàêà íàÿâíîñò³ ðèçèêó flange: high-vacuum ~ âèñîêîâàêóóìíèé ôëàíåöü flash 1. ñïàëàõ | ñïàëàõóâàòè 2. çàâóñåíåöü, îáëîé | çí³ìàòè çàâóñåíö³ flask: Dewar ~ ñóäèíà Äüþàðà flat: orientation ~ ïëîñêèé òîðåöü, ìàéäàí÷èê (íà çëèòêó) äëÿ âèçíà÷åííÿ êðèñòàëîãðàô³÷íî¿ îð³ºíòàö³¿ flatness ïëîùèííà wafer ~ ïëîùèííà íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè flatpack ïëîñêèé êîðïóñ ç ïëàíàðíèìè âèâîäàìè metal ~ ìåòàëåâèé ïëîñêèé êîðïóñ ç ïëàíàðíèìè âèâîäàìè flaw äåôåêò; òð³ùèíà; ðàêîâèíà flexibility: design ~ êîíñòðóêòîðñüêà ãíó÷ê³ñòü; óí³âåðñàëüí³ñòü ïðîåêòó flic çàãîò³âêà ç êðèñòàëà ç âèâîäàìè, âèð³çàíà ³ç ñòð³÷êîâîãî íîñ³ÿ ç âèâ³äíèìè ðàìêàìè flip âìîíòîâóâàòè ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà; ïåðåâåðòàòè êðèñòàë (ïðè ìîíòàæ³) flip-chip 1. ïåðåâåðíåíèé êðèñòàë 2. ìîíòàæ ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà flip-flop 1. òðèãåð; ñõåìà òðèãåðà 2. á³ñòàá³ëüíèé ìóëüòèâ³áðàòîð binary ~ Ò-òðèãåð, òðèãåð ë³÷èëüíîãî òèïó buried ~ âíóòð³øíüîñõåìíèé òðèãåð clocked ~ òàêòîâàíèé òðèãåð D-type ~ D-òðèããåð edge-triggered ~ òðèãåð, òàêòîâàíèé ïåðåïàäîì íàïðóãè gated ~ ñòðîáîâàíèé òðèãåð
J-K ~ J-K-òðèãåð monostable ~ ÷åêàþ÷èé [ìîíîñòàá³ëüíèé] ìóëüòèâ³áðàòîð reset-set [R-S] ~ àñèíõðîííèé RS-òðèãåð K-S-T ~ RST-òðèãåð, òàêòîâàíèé RS-òðèãåð set-reset ~ SR-òðèãåð static ~ ñòàòè÷íèé òðèãåð T [trigger] ~ T-òð³ããåð flip-over ìîíòàæ ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà float: dice ~ (íåáàæàíå) çì³ùåííÿ êðèñòàë³â ²Ñ ³ç çàäàíîãî ïîëîæåííÿ floorplan: chip ~ ïëàí ðîçì³ùåííÿ åëåìåíò³â ²Ñ íà êðèñòàë³ (íàïð. áëîê³â ²Ñ) general ~ «çàãàëüíèé ïëàí êðèñòàëà» floorplanning ïëàíóâàííÿ ²Ñ íà ïëîùèí³ floorspace âèðîáíè÷à (êîðèñíà) ïëîùà flop ôëîï (îäèíèöÿ âèì³ðþâàííÿ ïðîäóêòèâíîñò³ ÅÎÌ, ð³âíà 1 ìëí. îïåðàö³é â ñåêóíäó) Flotox ïðîöåñ «Ôëîòîêc” (äëÿ âèãîòîâëåííÿ ÌÎÍ ÇÓ ç ïëàâàþ÷èìè çàòâîðàìè) flow 1. ïîò³ê; òå÷³ÿ 2. äåôåêò (â åï³òàêñ³àëüí³é ïë³âö³) 3. îïëàâëåííÿ charge-carrier ~ ïîò³ê íîñ³¿â çàðÿä³â current ~ åëåêòðè÷íèé ñòðóì laminar ~ ëàì³íàðíèé ïîò³ê (íàïð. ô³ëüòðîâàíîãî ïîâ³òðÿ) layout process ~ ìàðøðóò ïðîåêòóâàííÿ òîïîëî㳿 leakage ~ âèò³ê; òå÷à process ~ ïîñë³äîâí³ñòü òåõíîëîã³÷íîãî ïðîöåñó turbulent ~ òóðáóëåíòíèé ïîò³ê VLSI design (process) ~ ìàðøðóò ïðîåêòóâàííÿ ÑÂ²Ñ flowchart 1. ñõåìà òåõíîëîã³÷íîãî ïðîöåñó; òåõíîëîã³÷íà êàðòà 2. áëîê-ñõåìà clerical ~ ôóíêö³îíàëüíà áëîê-ñõåìà logic ~ ëîã³÷íà áëîê-ñõåìà process ~ ñõåìà òåõíîëîã³÷íîãî ïðîöåñó system ~ áëîê-ñõåìà ñèñòåìè fluence: energy ~ ³íòåãðàëüíà ãóñòèíà ïîòîêó åíåð㳿 laser ~ ³íòåãðàëüíà ãóñòèíà ïîòîêó åíåð㳿 ëàçåðíîãî âèïðîì³íþâàííÿ fluid: coolant ~ ð³äêèé õîëîäîàãåíò
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for diffusion-pump ~ ð³äèíà äëÿ äèôóç³éíèõ âàêóóìíèõ íàñîñ³â liquid-crystal ~ ð³äêèé êðèñòàë fluidity òåêó÷³ñòü fluid-tight ãåðìåòè÷íèé, íåïðîíèêíèé äëÿ ð³äèíè fluor ôòîð, F plastic ~ ôòîðîïëàñò fluorescence: optical-resonant ~ îïòè÷íà ðåçîíàíñíà ôëþîðåñöåíö³ÿ (íàïð. ëàçåðíîñòèìóëþþ÷à) photodissociation product ~ ôëþîðåñöåíö³ÿ ïðîäóêò³â ôîòîäèñîö³àö³¿ X-ray ~ ðåíòãåí³âñüêà ôëþîðåñöåíö³ÿ fluoride ôòîðèä ammonium ~ ôòîðèñòèé àìîí³é, NH4F fluorination ââåäåííÿ ôòîðó â ñïîëóêó fluorine ôòîð, F fluorinert ôòîðèíåðò (ô³ðìîâà íàçâà ð³äêîãî ôòîðèñòî¿ ñïîëóêè äëÿ ïàÿííÿ íàãð³òèì ñòðóìåíåì ïàðè) fluorocarbon ôòîðîâóãëåöü fluorochemical ôòîðèñòå ç’ºäíàííÿ flush 1. ñòðóì³íü âîäè | ïðîìèâàòè [çìèâàòè] ñòðóìåíåì âîäè 2. çíàõîäèòèñÿ â îäí³é ïëîùèí³; áóòè íà îäíîìó ð³âí³ (ç ³íøèì åëåìåíòîì) flusher óñòàíîâêà äëÿ ñòðóìåíåâî¿ ïðîìèâêè flux 1. ôëþñ (äëÿ ïàÿííÿ) 2. ïîò³ê brazing ~ ôëþñ äëÿ ïàÿííÿ òóãîïëàâêèì ïðèïîºì resin ~ êàí³ôîëüíèé ôëþñ vacancy ~ ïîò³ê âàêàíñ³é water-based [water soluble] ~ âîäîðîç÷èííèé ôëþñ fluxer ïðèñòð³é äëÿ íàíåñåííÿ ôëþñó (äëÿ ïàÿííÿ) flywire òîíêèé äðîòÿíèé âèâ³ä foam: polyurethane ~ ï³íîïîë³óðåòàí fog âóàëü (íàïð. íà ôîòîîðèã³íàë³); ïîìóòí³ííÿ | âóàëþâàòè (íàïð. ôîòîîðèã³íàë) fogging emulsion ïîìóòí³ííÿ ôîòîåìóëüñ³¿ follower ïîâòîðþâà÷ Darlington emitter ~ åì³òåðíèé ïîâòîðþâà÷ íà ïàð³ Äàðë³íãòîíà p-n-p emitter ~ åì³òåðíèé ïîâòîðþâà÷ íà ð– n–ð-òðàíçèñòîð³
source ~ âèòîêîâèé ïîâòîðþâà÷ footprint 1. ñ³òêà (íàïð. âèçíà÷àþ÷à ñòàíäàðòíó â³äñòàíü ì³æ âèâîäàìè êîðïóñó) 2. êðîê ñ³òêè (íàïð. äðóêîâàíî¿ ïëàò³, ï³äêëàäêè) clean-room ~ ñ³òêà äëÿ ïëàíóâàííÿ ÷èñòèõ âèðîáíè÷èõ ïðèì³ùåíü foramen îòâ³ð forceload çàâàíòàæåííÿ ïðîãðàìíîãî çàáåçïå÷åííÿ forecast: long-range technical ~ äîâãîñòðîêîâå òåõí³÷íå ïðîãíîçóâàííÿ form ôîðìà; âèãëÿä | ôîðìóâàòè; óòâîðþâàòè bulk ~ îá’ºìíèé âèä (íàïð. íàï³âïðîâ³äíèêîâî¿ ï³äêëàäêè íà â³äì³íó â³ä åï³òàêñ³àëüíî¿) discrete wafer ~ áåçêîðïóñíå âèêîíàííÿ hybrid ~ ã³áðèäíå âèêîíàííÿ integrated-circuit ~ ³íòåãðàëüíå âèêîíàííÿ, âèêîíàííÿ ó âèãëÿä³ ²Ñ monolithic ~ ìîíîë³òíå âèêîíàííÿ; ³íòåãðàëüíå âèêîíàííÿ, âèêîíàííÿ ó âèãëÿä³ ²Ñ multichip ~ áàãàòîêðèñòàëüíå âèêîíàííÿ SMD ~ êîíñòðóêòèâíå âèêîíàííÿ (íàïð. ²Ñ) äëÿ ïîâåðõíåâîãî ìîíòàæó format 1. ôîðìàò | çàäàâàòè ôîðìàò 2. ôîðìà; âèä image ~ ôîðìàò çîáðàæåííÿ lead ~ ôîðìà âèâîä³â (êîðïóñè) physical chip ~ ô³çè÷íà ñòðóêòóðà êðèñòàëà formation: avalanche ~ âèíèêíåííÿ ëàâèííîãî ðîçðÿäó cracks ~ óòâîðåííÿ òð³ùèí; ðîçòð³ñêóâàííÿ dendrite ~ çðîñòàííÿ äåíäðèò³â filament ~ óòâîðåííÿ øíóðà, øíóðóâàííÿ interconnect [interconnection] ~ ôîðìóâàííÿ ì³æç’ºäíàíü junction ~ ôîðìóâàííÿ [âèãîòîâëåííÿ] ð–nïåðåõîäó oxide ~ 1. ôîðìóâàííÿ îêñèäó 2. óòâîðåííÿ îêñèäó pattern ~ ôîðìóâàííÿ ìàëþíêà p-n junction ~ ôîðìóâàííÿ [âèãîòîâëåííÿ] ð—n-ïåðåõîäó formatter óñòàíîâêà äëÿ çàâäàííÿ ôîðìàòó, ôîðìàòåð former:
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fun excising/lead ~ óñòàíîâêà äëÿ âèð³çêè êðèñòàëà ³ç ñòð³÷êîâîãî íîñ³ÿ ³ ôîðìóâàííÿ âèâîä³â lead ~ óñòàíîâêà äëÿ ôîðìóâàííÿ âèâîä³â forming: cold ~ õîëîäíå øòàìïóâàííÿ hot ~ ãàðÿ÷å øòàìïóâàííÿ lead ~ ôîðìóâàííÿ âèâîä³â formula: thick-film resistor ~ êîìïîçèö³ÿ äëÿ òîâñòîïë³âêîâèõ ðåçèñòîð³â formulation: conductor ~ êîìïîçèö³ÿ äëÿ (âèãîòîâëåííÿ) ïðîâ³äíèê³â thick-film (materials) ~ êîìïîçèö³ÿ äëÿ òîâñòîïë³âêîâèõ Ã²Ñ forsterite ôîðñòåðèò, Mg2SiO2 forward-biased ïðÿìîçì³ùåíèé fractionation: Te ~ ôðàêö³îíóâàííÿ (íàäïðîâ³äíèê³â) ïðè ïåâí³é êðèòè÷í³é òåìïåðàòóð³ fracture: cleavage ~ çëàì ïî îáëàñò³ ñïàéíîñò³ wafer ~ ðîçòð³ñêóâàííÿ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè; ðîçëàìóâàííÿ [ëàìàííÿ] íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè fracturer: wafer ~ óñòàíîâêà äëÿ ðîçä³ëåííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí íà êðèñòàëè ðîçëàìóâàííÿì fragment: photodissociation ~ ôðàãìåíò, óòâîðåíèé â ðåçóëüòàò³ ôîòîäèñîö³àö³¿ fragmentation äðîáëåííÿ; ïîäð³áíåííÿ frame: film ~ ïë³âêîâà ðàìêà (îñíîâà äëÿ ïëàñòèíè ç ñêðàéáîâàíèìè êðèñòàëàìè) ingrown lead ~ âèðîùåíà âèâ³äíà ðàìêà lead ~ âèâ³äíà ðàìêà (äëÿ ìîíòàæó êðèñòàë³â ²Ñ íà ñòð³÷êîâîìó íîñ³¿) frequency ÷àñòîòà boundary ~ ãðàíè÷íà [ãðàíè÷íà] ÷àñòîòà clock ~ 1. ÷àñòîòà ñèíõðîí³çàö³¿ 2. òàêòîâà ÷àñòîòà conversion ~ ÷àñòîòà ïåðåòâîðåííÿ cutoff ~ 1. ÷àñòîòà â³äñ³÷åííÿ 2. ãðàíè÷íà [ãðàíè÷íà] ÷àñòîòà driving ~ ÷àñòîòà çáóäæåííÿ; çàäàþ÷à ÷àñòîòà master ~ çàäàþ÷à ÷àñòîòà
operating ~ ðîáî÷à ÷àñòîòà rated ~ íîì³íàëüíà ÷àñòîòà reference ~ 1. îïîðíà ÷àñòîòà; åòàëîííà ÷àñòîòà 2. ÷àñòîòà îáåðòàííÿ scan(ning)~ 1. ÷àñòîòà ñêàíóâàííÿ 2. ÷àñòîòà ðîçãîðòêè switching ~ ÷àñòîòà ïåðåìèêàííÿ toggle ~ ÷àñòîòà ïåðåêèäàííÿ transition ~ ÷àñòîòà ïåðåõîäó unity current gain ~ ÷àñòîòà îäèíè÷íîãî êîåô³ö³ºíòà ï³äñèëåííÿ ïî ñòðóìó fringe: bright ~s ñâ³òë³ ³íòåðôåðåíö³éí³ ñìóãè dark ~s òåìí³ ³íòåðôåðåíö³éí³ ñìóãè diffraction ~s äèôðàêö³éí³ ñìóãè interference ~s ³íòåðôåðåíö³éí³ ñìóãè light ~s ñâ³òë³ ³íòåðôåðåíö³éí³ ñìóãè moir ~s ìóàðîâ³ ³íòåðôåðåíö³éí³ ñìóãè frit ôð³ò | ôð³òòóâàòè front-end: bipolar ~ åòàï ôîðìóâàííÿ á³ïîëÿðíèõ ñòðóêòóð íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ äî ìîíòàæíî-ñêëàäàëüíèõ îïåðàö³é fumer: HF ~ óñòàíîâêà òðàâëåííÿ (ä³îêñèäó êðåìí³þ) â ïàðàõ ïëàâèêîâî¿ êèñëîòè function 1. ôóíêö³ÿ 2. ä³ÿ, ôóíêö³îíóâàííÿ | ä³ÿòè, ôóíêö³îíóâàòè 3. pl ôóíêö³îíàëüí³ áëîêè AND ~ ôóíêö³ÿ ² basic ~ îñíîâíà [áàçîâà] ôóíêö³ÿ complementer ~ ôóíêö³ÿ äîïîâíåííÿ ³íòåãðàëà ïîìèëîê äî îäèíèö³ (õàðàêòåð ðîçïîä³ëó äîì³øêè ïðè äèôó糿) composite ~ ñêëàäíà ôóíêö³ÿ control ~ ôóíêö³ÿ óïðàâë³ííÿ cost ~ ö³ëüîâà ôóíêö³ÿ (ïðè ñòâîðåíí³ ìåòîä³â îïòèì³çàö³¿ ïàðàìåòð³â ²Ñ) decision ~ âèð³øàëüíà ôóíêö³ÿ, ôóíêö³ÿ (âèáîðó) ð³øåííÿ (ðîçâ’ÿçêó) driving ~ çàäàþ÷à ôóíêö³ÿ EITHER-OR [exclusive OR] ~ ôóíêö³ÿ ùî âèêëþ÷ຠÀÁÎ Fermi ~ ôóíêö³ÿ Ôåðì³ Gaussian ~ ôóíêö³ÿ Ãàóñà, ãàóññ³âñüêà ôóíêö³ÿ hash ~ õåø-ôóíêö³ÿ identity ~ òîòîæíà ôóíêö³ÿ inclusive OR ~ ôóíêö³ÿ âêëþ÷àþ÷å ÀÁÎ
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gag interface ~ ôóíêö³ÿ ³íòåðôåéñó, ³íòåðôåéñíà ôóíêö³ÿ library ~ á³áë³îòå÷íà ôóíêö³ÿ logic ~ ëîã³÷íà ôóíêö³ÿ low-layer ~ ôóíêö³ÿ íèæíüîãî øàðó (íàïð. ìåòàë³çàö³¿) majority ~ ìàæîðèòàðíà ôóíêö³ÿ, ôóíêö³ÿ á³ëüøîñò³ modulation transfer ~ ÷àñòîòíî-êîíòðàñòíà õàðàêòåðèñòèêà, ×ÊÕ NAND ~ ôóíêö³ÿ ÍÅ–² NOR ~ ôóíêö³ÿ ÍÅ–ÀÁÎ NOT ~ ôóíêö³ÿ ÍÅ OR ~ ôóíêö³ÿ ÀÁÎ shape ~ ôóíêö³ÿ ôîðìè single-level logic ~ îäíîð³âíåâà [îäíîçíà÷íà] ëîã³÷íà ôóíêö³ÿ storage ~ ôóíêö³ÿ çàïàì’ÿòîâóâàííÿ, ôóíêö³ÿ çáåð³ãàííÿ switching ~ ôóíêö³ÿ ïåðåìèêà÷à transfer ~ ïåðåäàâàëüíà ôóíêö³ÿ trial ~ ïðîáíà ôóíêö³ÿ (â ìåòîä³ ê³íöåâèõ åëåìåíò³â) wave ~ õâèëüîâà ôóíêö³ÿ work ~ ðîáîòà âèõîäó functionality ôóíêö³îíàëüí³ñòü fungi-proof, fungi-resistant ñò³éêèé äî ïë³ñíÿâè furnace ï³÷ arc ~ äóãîâà ï³÷ batch ~ ï³÷ ïåð³îäè÷íî¿ ä³¿ belt ~ êîíâåéºðíà ï³÷ computer-controlled diffusion ~ äèôóç³éíà ï³÷, êåðîâàíà ÅÎÌ continuous ~ ï³÷ áåçïåðåðâíî¿ ä³¿ controlled-atmosphere conveyor ~ êîíâåéºðíà ï³÷ ç ðåãóëüîâàíîþ àòìîñôåðîþ crucible ~ òèãåëüíà ï³÷ crystal pulling ~ ï³÷ äëÿ âèðîùóâàííÿ êðèñòàë³â ìåòîäîì âèòÿãàííÿ diffusion ~ äèôóç³éíà ï³÷ eight-tube diffusion ~ âîñüìèòðóáíà äèôóç³éíà ï³÷ epitaxial ~ åï³òàêñ³àëüíèé ðåàêòîð induction ~ ³íäóêö³éíà ï³÷ light-radiant ~ ï³÷ ç ðàä³àö³éíèì íàãð³âîì muffle ~ ìóôåëüíà ï³÷ multiatmosphere ~ ï³÷ ç ð³çíèìè ðîáî÷èìè ñåðåäîâèùàìè multistage ~ áàãàòîçîííà ï³÷
pilot-production diffusion äèôóç³éíà ï³÷ äëÿ äîñë³äíîãî âèðîáíèöòâà pyrotube ~ ï³÷ ç òðóá÷àñòèìè íàãð³âàëüíèìè åëåìåíòàìè quartz tube ~ äèôóç³éíà ï³÷ ç êâàðöîâîþ òðóáîþ sintering ~ ï³÷ äëÿ ñï³êàííÿ thick-film ~ ï³÷ äëÿ âï³êàííÿ òîâñòèõ ïë³âîê (ó âèðîáíèöòâ³ òîâñòîïë³âêîâèõ òÑ) fuse ïëàâêà ïåðåìè÷êà (íàïð. â ÏËÌ) blowable ~ âèñàäæóâàíà ïåðåìè÷êà (íàïð. â ïïçó) polysilicon ~ ïëàâêà ïåðåìè÷êà ç ïîë³êðèñòàë³÷íîãî êðåìí³þ thermal ~ ïëàâêèé çàïîá³æíèê titanium-tungsten ~ ïëàâêà ïåðåìè÷êà ³ç ñïëàâó òèòàíà ³ âîëüôðàìó fuser ï³÷ äëÿ ðîçïëàâëåííÿ ïðèïîþ infrared ~ ³íôðà÷åðâîíà ï³÷ äëÿ ðîçïëàâëåííÿ ïðèïîþ fusing ñïëàâ; ðîçïëàâëåííÿ solder ~ îïëàâëåííÿ ïðèïîþ; ðîçïëàâëåííÿ ïðèïîþ fusoisolator ïëàâêà ³çîëÿö³éíà ïåðåìè÷êà silicon dioxide ~ ïëàâêà ³çîëÿö³éíà ïåðåìè÷êà ç ä³îêñèäó êðåìí³þ fuzziness: edge ~ ðîçìèò³ñòü êðàþ çîáðàæåííÿ
G GaAs 1. àðñåí³ä ãàë³þ 2. íàï³âïðîâ³äíèêîâèé ïðèëàä íà àðñåí³ä³ ãàë³þ LEC-grown ~ àðñåí³ä ãàë³þ, âèðîùåíèé ìåòîäîì ×îõðàëüñüêîãî ç âèêîðèñòàííÿì îáâîë³êàííÿ ðîçïëàâó ³íåðòíîþ ð³äèíîþ planar ~ ïëàíàðíèé íàï³âïðîâ³äíèêîâèé ïðèëàä íà àðñåí³ä³ ãàë³þ gage 1. âèì³ðþâàëüíèé ïðèëàä, âèì³ðþâà÷; ìàíîìåòð, âàêóóììåòð | âèì³ðþâàòè 2. êàë³áð 3. ñîðòàìåíò (äðîòó) bench-top ~ íàñò³ëüíèé âèì³ðþâà÷ flatness ~ âèì³ðþâà÷ ïëîùèííîñò³ ion [ionization] ~ ³îí³çàö³éíèé âàêóóììåòð resistivity ~ âèì³ðþâà÷ ïèòîìîãî îïîðó strain ~ òåíçîìåòð; òåíçî÷óòëèâèé âèì³ðþâàëüíèé ïåðåòâîðþâà÷, òåíçîäàò÷èê vacuum ~ âàêóóììåòð X-ray thickness ~ ðåíòãåí³âñüêèé òîâùèíîì³ð
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gas gain 1. êîåô³ö³ºíò ï³äñèëåííÿ 2. ï³äñèëåííÿ; forbidden ~ çàáîðîíåíà çîíà; øèðèíà çá³ëüøåííÿ çàáîðîíåíî¿ çîíè avalanche ~ ëàâèííå ìíîæåííÿ graded band ~ ïëàâíîçì³ííà çàáîðîíåíà collector-to-base current ~ êîåô³ö³ºíò çîíà ï³äñèëåííÿ ïî ñòðóìó â ñõåì³ ³ç çàãàëüíèì guard ~ îõîðîííà çîíà (â ²Ñ) åì³òåðîì indirect ~ çàáîðîíåíà çîíà ç íåïðÿìèìè collector-to-emitter current [common-base] ïåðåõîäàìè ~ êîåô³ö³ºíò ïåðåäà÷³ åì³òåðíîãî ñòðóìó large-energy ~ øèðîêà çàáîðîíåíà òðàíçèñòîðà â ñõåì³ ³ç çàãàëüíîþ áàçîþ åíåðãåòè÷íà çîíà common-emitter ~ êîåô³ö³ºíò ï³äñèëåííÿ low-energy ~ âóçüêà çàáîðîíåíà åíåðãåòè÷íà ïî ñòðóìó â ñõåì³ ³ç çàãàëüíèì åì³òåðîì çîíà current ~ 1. êîåô³ö³ºíò ï³äñèëåííÿ ïî mask-to-wafer ~ çàçîð ì³æ ôîòîøàáëîíîì ³ ñòðóìó 2. ï³äñèëåííÿ ïî ñòðóìó íàï³âïðîâ³äíèêîâîþ ïëàñòèíîþ inverse ~ ³íâåðñíèé êîåô³ö³ºíò ï³äñèëåííÿ proximity ~ ì³êðîçàçîð (ó ôîòîë³òîãðàô³¿) ïî ñòðóìó superconducting ~ åíåðãåòè÷íà ù³ëèíà logic ~ íàâàíòàæóâàëüíà çäàòí³ñòü ëîã³÷íî¿ íàäïðîâ³äíèêà ²Ñ garment: open-loop ~ êîåô³ö³ºíò ï³äñèëåííÿ ïðè clean-room ~ îäÿã äëÿ ÷èñòèõ âèðîáíè÷èõ ðîç³ìêíåíîìó êîë³ çâîðîòíîãî çâ’ÿçêó ïðèì³ùåíü power ~ 1. êîåô³ö³ºíò ï³äñèëåííÿ ïî gas: ïîòóæíîñò³ 2. ï³äñèëåííÿ ïî ïîòóæíîñò³ ammonia ~ ãàçîïîä³áíèé àì³àê rated ~ íîì³íàëüíèé êîåô³ö³ºíò ï³äñèëåííÿ carrier ~ ãàç-íîñ³é small-signal ~ 1. êîåô³ö³ºíò ï³äñèëåííÿ ïðè degenerate electron ~ âèðîäæåíèé ìàëîìó ð³âí³ ñèãíàë³â 2. ï³äñèëåííÿ ïðè åëåêòðîííèé ãàç ìàëîìó ð³âí³ ñèãíàë³â dopant ~ ãàçîïîä³áíà äîì³øêà; speed ~ âèãðàø (âèãîäà) â øâèäêî䳿 ãàçîïîä³áíèé äèôóçàíò, ãàç-äèôóçàíò voltage ~ 1. êîåô³ö³ºíò ï³äñèëåííÿ ïî electronic-grade ~ ãàç åëåêòðîííî¿ ÷èñòîòè íàïðóç³ 2. ï³äñèëåííÿ ïî íàïðóç³ etchant ~ ãàçîïîä³áíèé òðàâíèê gal ãàë (îäèíèöÿ âèì³ðþâàííÿ ïðèñêîðåííÿ forming ~ ôîðì³ð-ãàç ïîâ³òðÿíîãî ïîòîêó, íàïð. â ÷èñòèõ impurity ~ ãàçîïîä³áíà äîì³øêà 2 ê³ìíàòàõ, â ì/ñ ; 1 gat=1/1000 G) inert ~ ³íåðòíèé [áëàãîðîäíèé] ãàç gallium ãàë³é, Ga mixed ~ ñóì³ø ãàç³â galvanization ãàëüâàíîñòåã³ÿ, íàíåñåííÿ noble ~ áëàãîðîäíèé [³íåðòíèé] ãàç ãàëüâàí³÷íèõ ïîêðèòü îñcluded ~ îêëþäîâàíèé ãàç gang 1. êîìïëåêò; íàá³ð; áëîê 2. (ìåõàí³÷íî) process ~ òåõíîëîã³÷íèé ãàç ñïîëó÷àòè (íàïð. äèñêðåòí³ êîìïîíåíòè) rare ~ ³íåðòíèé [áëàãîðîäíèé] ãàç gap 1. çàáîðîíåíà (åíåðãåòè÷íà) çîíà; øèðèíà reaction ~ õ³ì³÷íî àêòèâíèé ãàç çàáîðîíåíî¿ çîíè 2. çàçîð; ïðîì³æîê; sealing ~ ãàç-íàïîâíþâà÷ (äëÿ ãåðìåòèçàö³¿ ³íòåðâàë êîðïóñ³â) air ~ çàçîð, ïðîì³æîê (íàïð. ì³æ silicon-source ~ ãàçîïîä³áíå äæåðåëî åëåêòðîäàìè) êðåìí³þ (íàïð. ñèëàí) band ~ çàáîðîíåíà çîíà; øèðèíà stripping ~ ãàçîïîä³áíèé ðåàêòèâ äëÿ çàáîðîíåíî¿ çîíè âèäàëåííÿ (íàïð. çàëèøê³â ôîòîðåçèñòà) BCS energy ~ åíåðãåòè÷íà ù³ëèíà Áàðä³íà– two-dimension electron ~ äâîâèì³ðíèé Êóïåðà–Øð³ôôåðà, åíåðãåòè÷íà ù³ëèíà åëåêòðîííèé ãàç ÁÊØ VLSI-grade ~ (íàä÷èñòèé) ãàç äëÿ contact ~ çàçîð [ïðîì³æîê] ì³æ êîíòàêòàìè âèðîáíèöòâà ÍÂ²Ñ direct ~ çàáîðîíåíà çîíà ç ïðÿìèìè zero-dimensional electron-hole ~ ïåðåõîäàìè åëåêòðîííî-ä³ðêîâèé ãàç ç íóëüîâîþ energy ~ çàáîðîíåíà åíåðãåòè÷íà çîíà ðîçì³ðí³ñòþ
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gat 2D hole ~ äâîâèì³ðíèé ä³ðêîâèé ãàç gaslight ãåðìåòè÷íèé gate 1. ëîã³÷íèé åëåìåíò; âåíòèëü; ëîã³÷íà ñõåìà 2. çàòâîð (íàïð. ïîëüîâîãî òðàíçèñòîðà); óïðàâëÿþ÷èé åëåêòðîä 3. ïîñò; ðîáî÷å ì³ñöå 4. ñåëåêòîðíèé [ñòðîáóþ÷èé] ³ìïóëüñ, ñòðîá-³ìïóëüñ | çä³éñíþâàòè ñåëåêö³þ â ÷àñ³, ñòðîáóâàòè aluminum ~ àëþì³í³ºâèé çàòâîð AND ~ ëîã³÷íèé åëåìåíò ² AND–NOR ~ ëîã³÷íèé åëåìåíò ²–ÍÅ–ÀÁÎ AND-NOT ~ ëîã³÷íèé åëåìåíò ²–ÍÅ AND-OR ~ ëîã³÷íèé åëåìåíò ²–ÀÁÎ back ~ íèæí³é [çàäí³é] çàòâîð Boolean ~ ëîã³÷íèé åëåìåíò; âåíòèëü channelless sea ~s áåçêàíàëüíå «ìîðå âåíòèë³â» closed-geometry ~ çàòâîð ³ç çàìêíóòîþ ãåîìåòð³ºþ, çàìêíóòèé çàòâîð coincidence ~ ëîã³÷íèé åëåìåíò ², ñõåìà çá³ãó control ~ óïðàâëÿþ÷èé çàòâîð (ÌÎÍñòðóêòóðè) digital logic ~ ëîã³÷íèé åëåìåíò öèôðîâèé ²Ñ digital summation threshold logic ~ áàçîâèé åëåìåíò ïîðîãîâî¿ ëîã³êè discrete ~ 1. ëîã³÷íèé åëåìåíò íà äèñêðåòíèõ êîìïîíåíòàõ 2. ëîã³÷íà ²Ñ ç ìàëèì ñòóïåíåì ³íòåãðàö³¿ doped polysilicon ~ çàòâîð ç ëåãîâàíîãî ïîë³êðèñòàë³÷íîãî êðåìí³þ double-input ~ ëîã³÷íèé åëåìåíò ç äâîìà âõîäàìè DSTL ~ äèâ. digital summation threshold logic gate emitter-coupled (logic) ~ åëåìåíò ÅÇË equivalent ~ åêâ³âàëåíòíèé ëîã³÷íèé åëåìåíò, ëîã³÷íèé åêâ³âàëåíò (îäèíèöÿ âèì³ðþâàííÿ ñòóïåíÿ ³íòåãðàö³¿ ͲÑ, ùî ì³ñòèòü 7–10 êîìïîíåíò³â) erase ~ ñòèðàþ÷èé çàòâîð (íàïð. â ÇÏ) exclusive NOR ~ ëîã³÷íèé åëåìåíò âèêëþ÷àþ÷å ÀÁΖÍÅ exclusive OR ~ ëîã³÷íèé åëåìåíò âèêëþ÷àþ÷å ÀÁÎ expandable ~ ëîã³÷íèé åëåìåíò ç ìîæëèâ³ñòþ ðîçøèðåííÿ ïî âõîäàõ fan-in ~ ïîïåðåäí³é åëåìåíò (â ²Ñ) fan-out ~ íàñòóïíèé åëåìåíò (â ²Ñ)
fault-free ~ ñïðàâíèé ëîã³÷íèé åëåìåíò faulty ~ íåñïðàâíèé ëîã³÷íèé åëåìåíò finger ~ ãðåá³í÷àñòèé çàòâîð (ïîëüîâîãî òðàíçèñòîðà) floating ~ ïëàâàþ÷èé çàòâîð (ÌÎÍñòðóêòóðè) functional ~ ôóíêö³îíàëüíèé ëîã³÷íèé åëåìåíò IIL [I2L] ~ åëåìåíò ²2Ë imaging ~ åëåìåíò ôîðìóâà÷à â³äåîñèãíàë³â inclusive OR ~ ëîã³÷íèé to:åëåìåíò âêëþ÷àþ÷å ÀÁÎ inspectation ~ ïîñò â³çóàëüíîãî êîíòðîëþ intrinsic ~ çàòâîð ç íàï³âïðîâ³äíèêà ç âëàñíîþ åëåêòðîïðîâ³äí³ñòþ inverting ~ ³íâåðòóþ÷èé ëîã³÷íèé åëåìåíò isolated ~ ³çîëüîâàíèé çàòâîð Josephson(-junction) [Josephson tunneling] logic ~ ëîã³÷íèé åëåìåíò íà ïåðåõîäàõ Äæîçåôñîíà logic ~ ëîã³÷íèé åëåìåíò; âåíòèëü; ëîã³÷íà ñõåìà majority ~ åëåìåíò ìàæîðèòàðíî¿ ëîã³êè meander ~ çèãçàãîïîä³áíèé çàòâîð MOS [MOSFET] ~ ëîã³÷íèé åëåìåíò íà ÌÎÍ-òðàíçèñòîðàõ multiple-level (logic) ~ áàãàòîçíà÷íèé [áàãàòîð³âíåâèé] ëîã³÷íèé åëåìåíò NAND ~ ëîã³÷íèé åëåìåíò ÍÅ–² negation [negative] ~ ëîã³÷íèé åëåìåíò íå negative AND ~ ëîã³÷íèé åëåìåíò ²–ÍÅ nitride ~ çàòâîð (ÌÍÎÍ-ñòðóêòóðè) ç ³çîëþþ÷èì øàðîì ç í³òðèäó êðåìí³þ NOR ~ ëîã³÷íèé åëåìåíò ÀÁΖÍÅ NOT ~ ëîã³÷íèé åëåìåíò ÍÅ n + poly ~ çàòâîð (ÌÎÍ-òðàíçèñòîðà) ç ïîë³êðèñòàë³÷íîãî êðåìí³þ n+-òèïó offset ~ çì³ùåíèé [íåñèìåòðè÷íî ðîçòàøîâàíèé] çàòâîð OR ~ ëîã³÷íèé åëåìåíò ÀÁÎ OR–NOT ~ ëîã³÷íèé åëåìåíò ÀÁΖÍÅ polycrystalline silicon [polysilicon] ~ çàòâîð ç ïîë³êðèñòàë³÷íîãî êðåìí³þ, ïîë³êðåìí³ºâèé çàòâîð process control ~ ïîñò êîíòðîëþ (òåõíîëîã³÷íîãî) ïðîöåñó QA ~ ïîñò (çàáåçïå÷åííÿ) êîíòðîëþ ÿêîñò³ quantum interference Joseph-son ~ íàäïðîâ³äíèé êâàíòîâèé ³íòåðôåðåíö³éíèé äàò÷èê, ÍʲÄ
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gen recessed ~ çàòâîð ç V-ïîä³áíîþ êàíàâêîþ automated test pattern ~ àâòîìàòèçîâàíà ãåíåðàö³ÿ òåñòîâèõ ïîñë³äîâíîñòåé refractory-metal ~ çàòâîð ç òóãîïëàâêîãî automatic stimulus ~ àâòîìàòè÷íà ãåíåðàö³ÿ ìåòàëó âõ³äíèõ ñèãíàë³â replicate/annihilate ~ êîì³ðêà ðîçìíîæåííÿ avalanche ~ ëàâèííà ãåíåðàö³ÿ (íîñ³¿â ³ ñòèðàííÿ (â ÇÏ íà ÖÌÄ) çàðÿäó) resistive ~ ðåçèñòèâíèé çàòâîð bubble ~ 1. ãåíåðàö³ÿ ÖÌÄ 2. óòâîðåííÿ Scholtky(-barrier)~ çàòâîð ó âèãëÿä³ áàð’ºðó ïóõèðö³â Øîòê³, çàòâîð Øîòê³ carrier ~ ãåíåðàö³ÿ íîñ³¿â çàðÿäó Scholtky TTL ~ åëåìåíò ÒÒË ç ä³îäàìè carrier pair ~ ãåíåðàö³ÿ åëåêòðîííîØîòê³, åëåìåíò ÒÒËØ ä³ðêîâèõ ïàð sea ~s «ìîðå âåíòèë³â» (òèï áàçîâîãî color-pattern ~ ãåíåðàö³ÿ êîëüîðîâèõ ìàòðè÷íîãî êðèñòàëà) çîáðàæåíü self-aligned [self-registered] ~ dislocation ~ óòâîðåííÿ äèñëîêàö³é ñàìîñóì³ùåíèé çàòâîð E-beam pattern ~ 1. åëåêòðîííî-ïðîìåíåâà single-input ~ ëîã³÷íèé åëåìåíò ç îäíèì ãåíåðàö³ÿ çîáðàæåíü 2. åëåêòðîííîâõîäîì ïðîìåíåâå ôîðìóâàííÿ ñòðóêòóð (íàïð. íà single (-logic) level ~ îäíîð³âíåâèé ôîòîøàáëîí³) [îäíîçíà÷íèé] ëîã³÷íèé åëåìåíò, ëîã³÷íèé electron-hole pair ~ ãåíåðàö³ÿ åëåêòðîííîåëåìåíò ç îäíèì ëîã³÷íèì ð³âíåì ä³ðêîâèõ ïàð IC single-poly ~ çàòâîð ç ìîíîêðèñòàë³÷íîãî ³ artwork ~ âèãîòîâëåííÿ îðèã³íàëó ïîë³êðèñòàë³÷íîãî êðåìí³þ (ôîòîøàáëîíó) äëÿ ²Ñ stacked ~ áàãàòîð³âíåâèé çàòâîð layout ~ ðîçðîáêà òîïîëî㳿 storage ~ çàòâîð çáåð³ãàííÿ (ÏÇÇ) manual test ~ ðó÷íà ãåíåðàö³ÿ òåñò³â transfer ~ ïåðåäàþ÷èé [ïåðåäàâàëüíèé] mask ~ âèãîòîâëåííÿ øàáëîí³â çàòâîð (ÏÇÇ) module ~ ãåíåðàö³ÿ ìîäóë³â (â êðåìí³ºâèõ transistor ~ 1. åëåìåíò òðàíçèñòîðíî¿ ëîã³êè êîìï³ëÿòîðàõ ÑÀÏÐ) 2. çàòâîð òðàíçèñòîðà (íàïð. ïîëüîâîãî multiple-image ~ ìóëüòèïë³êàö³ÿ çîáðàæåíü òðàíçèñòîðà) non-particulate ~ âíåñåííÿ íåäèñïåðñíèõ variable threshold (logic) ~ ëîã³÷íèé çàáðóäíåíü; âèä³ëåííÿ íåäèñïåðñíèõ åëåìåíò ³ç çì³ííèì ïîðîãîì çàáðóäíåíü V-groove MOS ~ ëîã³÷íèé åëåìåíò íà participate ~ âíåñåííÿ äèñïåðñíèõ VÌÎÍ-òðàíçèñòîðàõ çàáðóäíåíü; âèä³ëåííÿ äèñïåðñíèõ ð-~ Ï-ïîä³áíèé çàòâîð (ïîëüîâîãî çàáðóäíåíü òðàíçèñòîðà) pattern ~ 1. ãåíåðàö³ÿ çîáðàæåíü 2. gating 1. ñòðîáóº 2. ç’ºäíàííÿ ëîã³÷íèõ ôîðìóâàííÿ ñòðóêòóð (íàïð. íà åëåìåíò³â 3. âèêîíàííÿ ëîã³÷íèõ îïåðàö³é ôîòîøàáëîí³) 3. ãåíåðàö³ÿ [ñèíòåç] òåñòîâèõ gauge äèâ. gage ïîñë³äîâíîñòåé gear 1. ìåõàí³çì 2. àïàðàòóðà; óñòàòêóâàííÿ radiation-enhanced ~ ðàä³àö³éíîadjustment ~ ðåãóëþâàëüíèé ìåõàí³çì; ñòèìóëüîâàíà ãåíåðàö³ÿ íàëàøòóâàëüíèé ìåõàí³çì static (charge) ~ óòâîðåííÿ [âèíèêíåííÿ] control ~ 1. îðãàí óïðàâë³ííÿ; ìåõàí³çì åëåêòðîñòàòè÷íèõ çàðÿä³â óïðàâë³ííÿ 2. àïàðàòóðà óïðàâë³ííÿ test ~ ãåíåðàö³ÿ [ñèíòåç] òåñò³â gel ãåëü | óòâîðþâàòè ãåëü test-pattern ~ 1. ôîðìóâàííÿ òåñòîâèõ silica ~ ñèë³êàãåëü ñòðóêòóð 2. ãåíåðàö³ÿ [ñèíòåç] òåñòîâèõ generation 1. ãåíåðàö³ÿ 2. óòâîðåííÿ; ïîñë³äîâíîñòåé âèãîòîâëåííÿ; ôîðìóâàííÿ 3. ïîêîë³ííÿ thermal carrier ~ òåïëîâà ãåíåðàö³ÿ íîñ³¿â (íàïð. ïðèëàä³â) 4. ãåíåðàö³ÿ [ñèíòåç] òåñò³â çàðÿäó artwork ~ âèãîòîâëåííÿ îðèã³íàëó generator 1. ãåíåðàòîð 2. âèì³ðþâàëüíèé (ôîòîøàáëîíó) ïåðåòâîðþâà÷, äàò÷èê 3. ãåíåðàòîð
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get [ïðîãðàìà ñèíòåçó] òåñò³â artwork ~ ãåíåðàòîð çîáðàæåíü îðèã³íàë³â (ôîòîøàáëîí³â) automated test ~ àâòîìàòèçîâàíèé ãåíåðàòîð òåñò³â built-in test ~ âáóäîâàíèé ãåíåðàòîð âõ³äíèõ òåñòîâèõ ñèãíàë³â character ~ ãåíåðàòîð çíàê³â; ãåíåðàòîð ñèìâîë³â electron-beam mask ~ åëåêòðîííîïðîìåíåâèé ãåíåðàòîð çîáðàæåíü ôîòîøàáëîí³â function ~ ãåíåðàòîð ôóíêö³é; ôóíêö³îíàëüíèé ïåðåòâîðþâà÷ gate test ~ ïðîãðàìà ñèíòåçó òåñò³â ïî ìîäåë³ Â²Ñ, ùî ì³ñòèòü ëîã³÷í³ åëåìåíòè Hall ~ ãåíåðàòîð Õîëëà macroblock test ~ ïðîãðàìà ñèíòåçó òåñò³â ïî ìîäåë³ Â²Ñ, ùî ì³ñòèòü ìàêðîêîì³ðêè(íà â³äì³íó â³ä âåíòèëüíî¿ ìîäåë³) mask (pattern) ~ ãåíåðàòîð çîáðàæåíü ôîòîøàáëîí³â memory (test) pattern ~ ãåíåðàòîð òåñòîâèõ ïîñë³äîâíîñòåé äëÿ êîíòðîëþ ÇÏ molecular-beam ~ ãåíåðàòîð ìîëåêóëÿðíîãî ïó÷êà (â ìîëåêóëÿðíî-ïó÷êîâ³é åï³òàêñ³¿) multilevel-interconnection ~ ãåíåðàòîð áàãàòîð³âíåâèõ ç’ºäíàíü optical pattern ~ îïòè÷íèé ãåíåðàòîð çîáðàæåíü pattern ~ 1. ãåíåðàòîð çîáðàæåíü 2. ãåíåðàòîð ñòðóêòóð (íàïð. íà ôîòîøàáëîí³) 3. ãåíåðàòîð [ïðîãðàìà ñèíòåçó] òåñòîâèõ ïîñë³äîâíîñòåé primary pattern ~ ãåíåðàòîð çîáðàæåíü ôîòîøàáëîí³â speech ~ ñèíòåçàòîð ìîâè test ~ ãåíåðàòîð [ïðîãðàìà ñèíòåçó] òåñò³â test-data ~ ãåíåðàòîð [ïðîãðàìà ñèíòåçó] òåñòîâèõ äàíèõ ultrasonic ~ óëüòðàçâóêîâèé ãåíåðàòîð verification condition ~ ãåíåðàòîð óìîâ âåðèô³êàö³¿ geometry 1. ãåîìåòð³ÿ; êîíô³ãóðàö³ÿ 2. ðîçì³ð closed ~ çàìêíóòà ãåîìåòð³ÿ electrode ~ êîíô³ãóðàö³ÿ [ôîðìà] åëåêòðîäà fine(-line) [fine-pattern]~ ãåîìåòð³ÿ ì³êðîñòðóêòóð ç åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â fingered ~ ãðåá³í÷àñòà ãåîìåòð³ÿ
gross ~ ãåîìåòð³ÿ ²Ñ ç åëåìåíòàìè çá³ëüøåíèõ ðîçì³ð³â interdigitated ~ ñòð³÷íî-ãðåá³í÷àñòà ãåîìåòð³ÿ lateral ~ ãîðèçîíòàëüíà ãåîìåòð³ÿ (ÌÎÍñòðóêòóðè) narrow ~ ãåîìåòð³ÿ ì³êðîñòðóêòóð ç åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â planar ~ ïëîùèííà ãåîìåòð³ÿ; ãåîìåòð³ÿ ïëàíàðíîãî ïðèëàäó scaled ~ ãåîìåòð³ÿ ìàñøòàáîâàíî¿ ²Ñ slight ~ ãåîìåòð³ÿ ì³êðîñòðóêòóð ç åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â stripe ~ ñìóæêîâà ãåîìåòð³ÿ submicrometer [submicron] ~ ñóáì³êðîííà ãåîìåòð³ÿ ²Ñ, ãåîìåòð³ÿ ²Ñ ç åëåìåíòàìè ñóáì³êðîííèõ ðîçì³ð³â tight ~ ãåîìåòð³ÿ ì³êðîñòðóêòóð ç åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â ultra-fine ~ ãåîìåòð³ÿ ì³êðîñòðóêòóð ç åëåìåíòàìè íàäìàëèõ ðîçì³ð³â germania îêñèä ãåðìàí³þ GeO2 germanium ãåðìàí³é, Ge compensated ~ êîìïåíñîâàíèé ãåðìàí³é hyperpure ~ íàä÷èñòèé ãåðìàí³é intrinsic ~ ãåðìàí³é ç âëàñíîþ åëåêòðîïðîâ³äí³ñòþ single-crystal ~ ìîíîêðèñòàë³÷íèé ãåðìàí³é getter ãåòåð, ãàçîïîãëèíà÷ | ãåòåðóâàòè bulk ~ îá’ºìíèé ãåòåð coil ~ ñï³ðàëüíèé ãåòåð flash ~ íàïèëþâàíèé ãåòåð pellet ~ òàáëåòêîâèé ãåòåð gettenng ãåòåðóâàííÿ, ãàçîïîãëèíà÷ back-side ~ ãåòåðóâàííÿ (çàáðóäíåíü) ïë³âêîþ íà íèæí³é ïîâåðõí³ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè diffusion ~ äèôóç³éíå ãåòåðóâàííÿ (çà ðàõóíîê íàïðóã ³ ïîðóøåíü ãðàòîê, âíåñåíèõ äîì³øêîþ) dopant ~ ãåòåðóâàííÿ äîì³øêè excimer laser ~ ãåòåðóâàííÿ âèïðîì³íþâàííÿì åêñèìåðíîãî ãàçó extrinsic ~ çîâí³øíº ãåòåðóâàííÿ intrinsic ~ âíóòð³øíº ãåòåðóâàííÿ, ãåòåðóâàííÿ ç âíóòð³øí³ì ãåòåðîì ion implantation ~ ãåòåðóâàííÿ ìåòîäîì ³îííîãî ëåãóâàííÿ (äëÿ ñòâîðåííÿ ì³êðîäåôåêò³â íà íèæí³é ïîâåðõí³ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè)
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gra phosphorous ~ ãåòåðóâàííÿ äèôó糺þ ôîñôîðó (äëÿ ñòâîðåííÿ äèñëîêàö³é íà íèæí³é ïîâåðõí³ ïëàñòèíè) preoxidation ~ ãåòåðóâàííÿ (íàï³âïðîâ³äíèêîâèõ ïëàñòèí) ïåðåä îêñèäóâàííÿì glass 1. ñêëî 2. àìîðôíà ôîðìà ä³îêñèäó êðåìí³þ alkali-lead silicate ~ ñâèíöåâîëóæíå ñèë³êàòíå ñêëî aluminosilicate ~ àëþìîñèë³êàòíå ñêëî barium ~ áàð³ºâå ñêëî boron [borosilicate] ~ áîðîñèë³êàòíå ñêëî chalcogenide ~ õàëüêîãåí³äíå ñêëî compound ~ áàãàòîêîìïîíåíòíå ñêëî conductive ~ åëåêòðîïðîâ³äíå ñêëî fiber ~ ñêëîâîëîêíî hard ~ òóãîïëàâêå ñêëî lead ~ ñâèíöåâå ñêëî lime ~ âàïíÿíå ñêëî liquid ~ ð³äêå ñêëî multicomponent ~ áàãàòîêîìïîíåíòíå ñêëî phosphor-silicate ~ ôîñôîðîñèëèêàòíîå ñêëî quartz ~ êâàðöîâå ñêëî resin ~ îðãàí³÷íå ñêëî seal(ing)~ ñêëî ïðèïîþ, ñêëÿíèé ïðèï³é silicate [silicious] ~ ñèë³êàòíå ñêëî soda ~ íàòð³ºâå ñêëî solder ~ ñêëî ïðèïîþ , ñêëÿíèé ïðèï³é spin-on ~ ñêëî, íàíåñåíå ìåòîäîì öåíòðèôóãóâàííÿ glass-ñåramics ñêëîêåðàì³êà glass-glazed ãëàçóðîâàíèé glassivation ïàñèâàö³ÿ ñêëîì glass-passivated ïàñèâîâàíèé ñêëîì glass-sealed ãåðìåòèçîâàíèé ñêëîì glaze ãëàçóð | ãëàçóðóâàòè gloves: antistatic ~ àíòèñòàòè÷í³ ðóêàâè÷êè glue 1. êëåé | ïðèêëåþâàòè 2. çâ’ÿçóþ÷à ²Ñ logic ~ ëîã³÷íà çâ’ÿçóþ÷à ²Ñ gobbler. solder ~ (âàêóóìíèé) â³äñìîêòóâà÷ ðîçïëàâëåíîãî ïðèïîþ gold çîëîòî, Àu gold/mylan master ~ øàáëîí (äëÿ ðåíòãåí³âñüêî¿ ë³òîãðàô³¿) ó âèãëÿä³ ïë³âêè çîëîòà íà ìàéëàð³
goniometer ãîí³îìåòð grade: cleanness ~ ñòóï³íü ÷èñòîòè; êëàñ ÷èñòîòè (íàïð. õ³ì³÷íèõ ðåàêòèâ³â) electronic ~ åëåêòðîííà ÷èñòîòà (íàïð. ìàòåð³àë³â) semiconductor ~ íàï³âïðîâ³äíèêîâà ÷èñòîòà gradient ãðà䳺íò affinity ~ ãðà䳺íò ñïîð³äíåíîñò³ äî åëåêòðîíà concentration ~ ãðà䳺íò êîíöåíòðàö³¿ density ~ ãðà䳺íò ãóñòèíè; ãðà䳺íò êîíöåíòðàö³¿ diffusion ~ ãðà䳺íò ðîçïîä³ëó äîì³øêè ïðè äèôó糿 dopant ~ ãðà䳺íò ðîçïîä³ëó (ëåãóþ÷î¿) äîì³øêè dosage ~ ãðà䳺íò äîçè field ~ ãðà䳺íò ïîëÿ impurity ~ ãðà䳺íò ðîçïîä³ëó (ëåãóþ÷î¿) äîì³øêè resistivity ~ ãðà䳺íò ïèòîìîãî îïîðó temperature [thermal] ~ òåìïåðàòóðíèé ãðà䳺íò wafer ~ íåîäíîð³äí³ñòü êðèñòàë³â, ðîçòàøîâàíèõ ïî ïåðèôå𳿠³ â öåíòðàëüí³é ÷àñòèí³ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè grading: die ~ ñîðòóâàííÿ [êëàñèô³êàö³ÿ] êðèñòàë³â exponential ~ åêñïîíåíö³àëüíèé ïëàâíèé ðîçïîä³ë äîì³øêè gradiometer ãðàä³îìåòð squid-based ~ ãðàä³îìåòð íà îñíîâ³ ÍʲÄà (íàïð. äëÿ êîíòðîëþ ôåðîìàãí³òíèõ ïëàñòèí) grain çåðíî; êðèñòàë³ò; ãðàíóëà | ãðàíóëþâàòè columnar ~ çåðíî öèë³íäðè÷íî¿ ôîðìè crystal ~ êðèñòàë³ò granulation ãðàíóëÿö³ÿ, ãðàíóëÿö³ÿ granule çåðíî; ãðàíóëà graph 1. ãðàô 2. ãðàô³ê; ä³àãðàìà, íîìîãðàìà connected ~ çâ’ÿçàíèé ãðàô control flow ~ óïðàâëÿþ÷èé ãðàô directed ~ îð³ºíòîâàíèé ãðàô disconnected ~ íåçâ’ÿçàíèé ãðàô sectional ~ óñ³÷åíèé ãðàô state ~ ãðàô ñòàíó transition ~ ãðàô ïåðåõîä³â tree ~ äåðåâîâèäíèé ãðàô graphics 1. ãðàô³êà 2. ãðàô³÷í³ ïðèñòðî¿
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gro (óâåäåííÿ-âèâåäåííÿ) computer ~ 1. ìàøèííà [êîìï’þòåðíà] ãðàô³êà 2. ãðàô³÷í³ ïðèñòðî¿ ÅÎÌ interactive ~ ä³àëîãîâ³ ãðàô³÷í³ ïðèñòðî¿ graphitization ãðàô³ò³çàö³ÿ (ïåðåòâîðåííÿ, íàïð. ïîë³ìåðó â ãðàô³òîïîä³áíèé ìàòåð³àë) graphoepitaxy ãðàôîåï³òàêñ³ÿ (âæèâàííÿ ëàçåð³â äëÿ êðèñòàë³çàö³¿ àìîðôíîãî àáî ïîë³êðèñòàë³÷íîãî êðåìí³þ) graticule îêóëÿðíà ñ³òêà grating 1. äèôðàêö³éíà ãðàòêà 2. ãðàòêà; ñ³òêà base ~ ãðàòêà [ñ³òêà] â áàç³ (òðàíçèñòîðà ç ïðîíèêíîþ áàçîþ) checker ~ êîíòðîëüíà äèôðàêö³éíà ãðàòêà crystal ~ êðèñòàë³÷íà äèôðàêö³éíà ãðàòêà diffraction ~ äèôðàêö³éíà ãðàòêà face-ñåntered ~ ãðàíåöåíòðîâàíà ãðàòêà photomask ~ ãðàòêà íà ôîòîøàáëîí³ grease ìàñòèëî | ìàñòèòè high-vacuum ~ âèñîêîâàêóóìíå ìàñòèëî silicon ~ ñèë³êîíîâå ìàñòèëî grid ñ³òêà; ãðàòêà ~ wire tracks ñ³òêà ñòðóìîïðîâ³äíèõ äîð³æîê chip ~ ñ³òêà ðîçì³ùåííÿ êðèñòàë³â (íà ïëàò³) coarse ~ êîîðäèíàòíà ñ³òêà ç âåëèêèì êðîêîì fixed ~ ñ³òêà ç ô³êñîâàíèì êðîêîì irregular ~ ñ³òêà ³ç çì³ííèì êðîêîì standard ~ ñòàíäàðòíà ñ³òêà (äðóêîâàíî¿ ïëàò³) variable ~ ñ³òêà ³ç çì³ííèì êðîêîì gridistor ãð³ä³ñòîð grinder øë³ôóâàëüíèé âåðñòàò cassette-to-cassette ~ øë³ôóâàëüíèé âåðñòàò ç òðàíñïîðòóâàííÿì ç êàñåòè â êàñåòó rotary (surface) ~ øë³ôóâàëüíèé âåðñòàò ç àáðàçèâíèìè êðóãàìè, ùî îáåðòàþòüñÿ grinding øë³ôóâàííÿ, øë³ôîâêà disk ~ øë³ôóâàííÿ íà àáðàçèâíîìó êðóç³ electrochemical ~ åëåêòðîõ³ì³÷íå øë³ôóâàííÿ electrolytic ~ åëåêòðîë³òè÷íå øë³ôóâàííÿ high-precision ~ âèñîêîïðåöèç³éíå øë³ôóâàííÿ groove êàíàâêà; çàãëèáëåííÿ | ôîðìóâàòè êàíàâêè flat-bottomed ~ V-ïîä³áíà êàíàâêà ç ïëîñêèì äíîì (â ÌÎÍ-òðàíçèñòîð³)
gate ~ V-ïîä³áíà êàíàâêà çàòâîðà (â ÌÎÍòðàíçèñòîð³) isolation ~ ³çîëþþ÷à êàíàâêà V(-shaped) ~ V-ïîä³áíà êàíàâêà (â VÌÎÍòðàíçèñòîð³) grooving 1. ôîðìóâàííÿ êàíàâîê 2. êàíàâêà; ïîãëèáëåííÿ 3. ïðîô. âèçíà÷åííÿ ÿêîñò³ äèôó糿 grounding: via ~ çàçåìëåííÿ ÷åðåç íàñêð³çí³ îòâîðè group ãðóïà; ñóêóïí³ñòü | ãðóïóâàòè active element ~ ãðóïà àêòèâíèõ åëåìåíò³â (â³äíîñíà îäèíèöÿ âèì³ðþâàííÿ ñòóïåíÿ ³íòåãðàö³¿ ²Ñ, íàïð. ëîã³÷íèé åëåìåíò) closed user ~ çàìêíóòà ãðóïà êîðèñòóâà÷³â design advisory ~ ãðóïà êîíñóëüòàíò³â ðîçðîáêè ²Ñ drop-in test ~ ãðóïà òåñòîâèõ ñòðóêòóð íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ operational design ~ ãðóïà ôóíêö³îíàëüíîãî ïðîåêòóâàííÿ ²Ñ test element ~ òåñòîâà ãðóïà åëåìåíò³â grower: Bridgement-type crystal ~ óñòàíîâêà âèðîùóâàííÿ (ìîíî) êðèñòàë³â ìåòîäîì Áð³äæìåíà high-pressure crystal ~ óñòàíîâêà âèðîùóâàííÿ (ìîíî) êðèñòàë³â ïðè âèñîêîìó òèñêó growth 1. âèðîùóâàííÿ; íàðîùóâàííÿ 2. ð³ñò (êðèñòàëà) buried ~ âèðîùóâàííÿ ïðèõîâàíèõ øàð³â crystal ~ 1. âèðîùóâàííÿ (ìîíî) êðèñòàëà 2. ð³ñò (ìîíî) êðèñòàëà dendritic ~ 1. âèðîùóâàííÿ äåíäðèòîâ 2. ð³ñò äåíäðèò³â epitaxial ~ åï³òàêñ³àëüíå âèðîùóâàííÿ, åï³òàêñ³ÿ heteroepitaxial ~ ãåòåðîåï³òàêñ³àëüíå âèðîùóâàííÿ film ~ âèðîùóâàííÿ ïë³âêè hillock ~ ð³ñò ãîðáèê³â, «õ³ëëîê³â» (íàïð. íà àëþì³í³ºâ³é ïë³âö³) laser-assisted pyrolytic ~ ëàçåðíîñòèìóëþþ÷å ï³ðîë³òè÷íå âèðîùóâàííÿ layer-by-layer ~ ïîøàðîâèé ð³ñò (êðèñòàë³÷íî¿ ðå÷îâèíè) liquid(-phase) epitaxial ~ åï³òàêñ³àëüíå âèðîùóâàííÿ ç ð³äêî¿ ôàçè
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han low-pressure epitaxial ~ åï³òàêñ³àëüíå âèðîùóâàííÿ ïðè íèçüêîìó òèñêó low-temperature ~ 1. íèçüêîòåìïåðàòóðíå âèðîùóâàííÿ 2. íèçüêîòåìïåðàòóðíå ð³ñò metal-organic ~ âèðîùóâàííÿ (ïë³âîê) ï³ðîë³çîì ïàðè ìåòàëîîðãàí³÷íèõ ñïîëóê metal-oxide-semiconductor ~ âèðîùóâàííÿ ÌÎÍ-ñòðóêòóðè molecular-beam (epitaxial) ~ ìîëåêóëÿðíîïó÷êîâå åï³òàêñ³àëüíå âèðîùóâàííÿ monolayer ~ âèðîùóâàííÿ ìîíîìîëåêóëÿðíîãî àáî ìîíîàòîìíîãî øàðó multistage ~ áàãàòîñòóïåíåâå âèðîùóâàííÿ; áàãàòîêðàòíå (åï³òàêñ³àëüíå) âèðîùóâàííÿ oriented ~ îð³ºíòîâàíèé ð³ñò pre-epitaxial ~ âèðîùóâàííÿ ïðèõîâàíèõ n+øàð³â ïåðåä åï³òàêñ³àëüíèì îñàäæåííÿì pulling ~ âèðîùóâàííÿ (êðèñòàëà) ìåòîäîì âèòÿãàííÿ selective ~ âèáîð÷å âèðîùóâàííÿ shuttered ~ ïåðåðèâ÷àñòå âèðîùóâàííÿ ïë³âêè (ùî ïåðåðèâàºòüñÿ çàñë³íêîþ äæåðåëà) single-crystal ~ âèðîùóâàííÿ ìîíîêðèñòàëà spurious ~ íåáàæàíèé ð³ñò (íàïð. íà ³íø³é ïîâåðõí³) «stop-and-go» MBE ~ ìîëåêóëÿðíî-ïó÷êîâà åï³òàêñ³ÿ, ùî ïåðåðèâàºòüñÿ supported ribbon ~ âèðîùóâàííÿ ñòð³÷êîâîãî êðèñòàëà íà íåñó÷³é ï³äêëàäö³ thermal oxide ~ òåðì³÷íå âèðîùóâàííÿ îêñèäó two-dimensional ~ äâîâèì³ðíèé ð³ñò (ìîíîêðèñòàë³÷íî¿ ðå÷îâèíè) vapor(-phase) epitaxial ~ åï³òàêñ³àëüíå âèðîùóâàííÿ ç ïàðîâî¿ ôàçè guardband îõîðîííå ê³ëüöå (äèâ. òæ guard ring) guide 1. ñïðÿìîâóþ÷èé ïðèñòð³é, íàïðàâëÿþ÷à | ñïðÿìîâóâàòè; óïðàâëÿòè 2. ñâ³òëîâ³ä, ñâ³òëîïðîâ³ä lapping ~ çíàê [â³äì³òêà] ïðèïèíåííÿ øë³ôîâêè (íàïð. ñòîïîðíèé øàð) light ~ ñâ³òëîâ³ä, ñâ³òëîïðîâ³ä guidelines: design ~ ïîñ³áíèê ïî ïðîåêòóâàííþ gun åëåêòðîííèé ïðîæåêòîð, åëåêòðîííà ãàðìàòà
electron ~ åëåêòðîííèé ïðîæåêòîð, åëåêòðîííà ãàðìàòà molecular ~ äæåðåëî ìîëåêóëÿðíîãî ïó÷êà Solder(ing)~ ïàÿëüíèê; ï³ñòîëåòíèé ïàÿëüíèê spray ~ ï³ñòîëåò äëÿ ðîçïèëþâàííÿ, ï³ñòîëåò-ðîçïèëþâà÷ sputter ~ 1. åëåêòðîííà ãàðìàòà äëÿ ³îííîãî ðîçïèëþâàííÿ 2. ï³ñòîëåò äëÿ ðîçïèëþâàííÿ, ï³ñòîëåò-ðîçïèëþâà÷ «guncher» óñòàòêóâàííÿ äëÿ ñêðàéáóâàííÿ ³ ëîìêè íàï³âïðîâ³äíèêîâèõ ïëàñòèí (íà êðèñòàëè) gyrator ã³ðàòîð hybrid (integrated-circuit) ~ ã³áðèäíèé ã³ðàòîð, Ã²Ñ ã³ðàòîðà
H habit ãàá³òóñ êðèñòàëà crystal ~ ãàá³òóñ êðèñòàëà Halltron êîì³ðêà Õîëëà handler ìàí³ïóëÿòîð; ïðèñòð³é ïîäà÷³ ³ ïåðåì³ùåííÿ automatic component ~ àâòîìàòè÷íèé ìàí³ïóëÿòîð äëÿ êîìïîíåíò³â cassette-to-cassette ~ ìàí³ïóëÿòîð äëÿ ïåðåäà÷³ íàï³âïðîâ³äíèêîâèõ ïëàñòèí ç êàñåòè â êàñåòó DIP ~ ìàí³ïóëÿòîð äëÿ ²Ñ â DIP-êîðïóñ³ environmental ~ ìàí³ïóëÿòîð äëÿ óñòàíîâêè êë³ìàòè÷íèõ âèïðîáóâàíü integrated-circuit ~ ìàí³ïóëÿòîð äëÿ ²Ñ; ïðèñòð³é ïîäà÷³ ³ ïåðåì³ùåííÿ ²Ñ microprocessor-based ~ ìàí³ïóëÿòîð ç ì³êðîïðîöåñîðíèì óïðàâë³ííÿì; íàâàíòàæóâàëüíî-ðîçâàíòàæóâàëüíèé ïðèñòð³é [ÍÐÏ] ç ì³êðîïðîöåñîðíèì óïðàâë³ííÿì reel-to-reel ~ ìàí³ïóëÿòîð äëÿ ïåðåì³ùåííÿ êîìïîíåíò³â ç êîòóøêè â êîòóøêó vacuum chuck ~ ìàí³ïóëÿòîð ç âàêóóìíèì çàõîïëåííÿì handling 1. ìàí³ïóëþâàííÿ; (ì³æîïåðàö³éíà) òðàíñïîðòóâàííÿ; ïîäà÷à (íàï³âïðîâ³äíèêîâèõ ïëàñòèí) 2. (òåõíîëîã³÷íà) îáðîáêà automated data ~ àâòîìàòèçîâàíà îáðîáêà äàíèõ gas ~ ðîçïîä³ë (òåõíîëîã³÷íèõ) ãàç³â
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hea human ~ ðó÷íå ìàí³ïóëþâàííÿ; ðó÷íå òðàíñïîðòóâàííÿ in-process ~ òåõíîëîã³÷íå ìàí³ïóëþâàííÿ (íàïð òðàíñïîðòóâàííÿ, çàâàíòàæåííÿ, ðîçâàíòàæåííÿ) operator ~ ðó÷í³ íàâàíòàæóâàëüíîðîçâàíòàæóâàëüí³ îïåðàö³¿ touchless ~ áåçêîíòàêòíå òðàíñïîðòóâàííÿ (íàïð. íà ïîâ³òðÿí³é ïîäóøö³) tweezer ~ ïîôóçî÷íî-ðîçâàíòàæóâàëüí³ îïåðàö³¿ çà äîïîìîãîþ ï³íöåò³â tweezer-free ~ áåçï³íöåòí³ íàâàíò àæóâà ëüíî-ðîçâàíò àæóâà ëüí³ îïåðàö³¿ wafer ~ 1. òðàíñïîðòóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí; ïîäà÷à íàï³âïðîâ³äíèêîâèõ ïëàñòèí 2. îáðîáêà íàï³âïðîâ³äíèêîâèõ ïëàñòèí hardbake òåðìîîáðîáêà ïðè ïîð³âíÿíî âèñîê³é òåìïåðàòóð³; çàäóáëåííÿ ôîòîðåçèñòà hardbaker: pre-etch ~ ïðèñòð³é äëÿ çàäóáëèâàíèÿ ôîòîðåçèñòà ïåðåä òðàâëåííÿì hardbaking çàäóáëåííÿ ôîòîðåçèñòà hardener îòâåðäèòåëü epoxy ~ åïîêñèäíèé îòâåðäèòåëü hardening 1. îòâåðä³âàííÿ; òâåðäíåííÿ 2. çàäóáëåííÿ ôîòîðåçèñòà 3. çàáåçïå÷åííÿ ðàä³àö³éíî¿ ñò³éêîñò³ (IC) age ~ òâåðäíåíííÿ ïðè ñòàð³íí³ anti-jam ~ çàáåçïå÷åííÿ ïåðåøêîäîñò³éêîñò³ environmental ~ ï³äâèùåííÿ ñò³éêîñò³ äî 䳿 íàâêîëèøíüîãî ñåðåäîâèùà irradiation ~ ðàä³àö³éíå îòâåðä³âàííÿ radiation ~ çàáåçïå÷åííÿ ðàä³àö³éíî¿ ñò³éêîñò³ hardness 1. òâåðä³ñòü 2. æîðñòê³ñòü âîäè; æîðñòê³ñòü âèïðîì³íþâàííÿ 3. ðàä³àö³éíà ñò³éê³ñòü abrasive ~ òâåðä³ñòü íà ñòèðàííÿ Knoop ~ òâåðä³ñòü ïî Êíóïó lapping ~ òâåðä³ñòü ïðè øë³ôîâö³ Mohs ~ òâåðä³ñòü ïî Ìîîñó radiation ~ 1. æîðñòê³ñòü âèïðîì³íþâàííÿ 2. ðàä³àö³éíà ñò³éê³ñòü Rockwell ~ òâåðä³ñòü ïî Ðîêâåëëó
X-ray ~ 1. æîðñòê³ñòü ðåíòãåí³âñüêîãî ïðîì³ííÿ 2. ñò³éê³ñòü äî ðåíòãåí³âñüêîãî âèïðîì³íþâàííÿ hardware 1. àïàðàòíå çàáåçïå÷åííÿ 2. ïðèëàäè; àïàðàòóðà; óñòàòêóâàííÿ custom ~ çàìîâëåí³ ïðèëàäè; çàìîâëåíà àïàðàòóðà dedicated ~ ñïåö³àë³çîâàí³ ïðèëàäè; ñïåö³àë³çîâàíà àïàðàòóðà modular ~ ìîäóëüíà àïàðàòóðà, àïàðàòóðà ìîäóëüíî¿ êîíñòðóêö³¿ packaging ~ 1. óñòàòêóâàííÿ äëÿ çá³ðêè ³ ãåðìåòèçàö³¿ 2. äåòàë³ ³ åëåìåíòè äëÿ êîðïóñ³â support ~ äîïîì³æí³ ïðèëàäè; äîïîì³æíà àïàðàòóðà vacuum pumping ~ âàêóóìíå óñòàòêóâàííÿ hardwiring 1. ôîðìóâàííÿ ô³êñîâàíèõ ç’ºäíàíü 2. æîðñòêèé ìîíòàæ hazard 1. ðèçèê çáîþ (âèíèêàþ÷èé ïðè òèì÷àñîâîìó ìîäåëþâàíí³ öèôðîâèõ ²Ñ) 2. â³äìîâà; ³íòåíñèâí³ñòü â³äìîâ functional ~ ôóíêö³îíàëüíèé [íåóñóâíèé] ðèçèê çáîþ logic ~ ëîã³÷íèé [òàêèé, ùî óñóâàºòüñÿ] ðèçèê çáîþ static 1-~ ñòàòè÷íèé ðèçèê çáîþ â «1» static 0-~ ñòàòè÷íèé ðèçèê çáîþ â «0» step-down ~ äèíàì³÷íèé ðèçèê çáîþ, ïîâ’ÿçàíèé ç ïåðåõîäîì ç «1» â «0» step-up ~ äèíàì³÷íèé ðèçèê çáîþ, ïîâ’ÿçàíèé ç ïåðåõîäîì ç «0» â «1» head: application ~ íàëàøòîâóâàëüíà [ìîíòàæíà] ãîëîâêà (íàïð. á³ëÿ ìîíòàæíî-ñêëàäàëüíîãî àâòîìàòà) bird’s ~ «ïòàøèíà ãîëîâà» (÷àñòèíà îêñèäíî¿ ñòðóêòóðè äëÿ ³çîëÿö³¿ ²Ñ) pick-and-place ~ ñõîïëþþ÷à ³ ìîíòàæíà ãîëîâêà (óñòàíîâêà ïîâåðõíåâîãî ìîíòàæó) placement ~ íàëàøòîâóâàëüíà [ìîíòàæíà] ãîëîâêà (äëÿ óñòàíîâêè êîìïîíåíò³â íà äðóêîâàí³é ïëàò³) thick-film printing ~ ãîëîâêà óñòàíîâêè äëÿ òðàôàðåòíîãî äðóêó òîâñòèõ ïë³âîê header 1. êðèñòàëîíîñ³é, êðèñòàëîòðèìà÷ (äèâ. òæ carrier, holder) 2. îñíîâà êîðïóñó 3. çàãîëîâîê, «øàïêà» block ~ çàãîëîâîê áëîêó äàíèõ
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hol glass ~ 1. ñêëÿíèé êðèñòàëîíîñ³é 2. ñêëÿíà îñíîâà êîðïóñó link ~ çàãîëîâîê êàíàëó äàíèõ package ~ îñíîâà êîðïóñó heat 1. òåïëîòà 2. íàãð³â, íàãð³âàííÿ | íàãð³âàòè ohmic [resistance] ~ äæîóëåâà òåïëîòà specific ~ ïèòîìà òåïëîºìí³ñòü heater íàãð³âà÷ graphite strip ~ ãðàô³òíèé ñòð³÷êîâèé íàãð³âà÷ resistance (-type) ~ ðåçèñòèâíûé íàãð³âà÷ heating íàãð³â, íàãð³âàííÿ electron-beam ~ åëåêòðîííî-ïðîìåíåâèé íàãð³â electronic [high-frequency] ~ âèñîêî÷àñòîòíèé íàãð³â induction [inductive] ~ ³íäóêö³éíèé íàãð³â infrared ~ ³íôðà÷åðâîíèé [²×-] íàãð³â lamp ~ ëàìïîâèé íàãð³â laser ~ ëàçåðíèé íàãð³â radiating ~ ðàä³àö³éíèé íàãð³â radio-frequency ~ âèñîêî÷àñòîòíèé íàãð³â resistance ~ ðåçèñòèâíèé íàãð³âàþ÷è heatspreader òåïëîâ³äâ³ä heavily-doped ñèëüíîëåãîâàíèé height: barrier ~ âèñîòà (ïîòåíö³àëüíîãî) áàð’ºðó pulse ~ àìïë³òóäà ³ìïóëüñó hermetically-impervious ãåðìåòè÷íèé, ãåðìåòèçóºòüñÿ hermeticity ãåðìåòè÷í³ñòü heteroepitaxy ãåòåðîåï³òàêñ³ÿ heterogeneity ãåòåðîãåíí³ñòü heterointerface ãåòåðîìåæà heterojunction ãåòåðîïåðåõ³ä abrupt ~ ð³çêèé ãåòåðîïåðåõ³ä double ~ ïîäâ³éíèé ãåòåðîïåðåõ³ä epi(taxial) ~ åï³òàêñ³àëüíèé ãåòåðîïåðåõ³ä forward-biased ~ ïðÿìîçì³ùåíèé ãåòåðîïåðåõ³ä n–n ~ n–n-ãåòåðîïåðåõ³ä, åëåêòðîííîåëåêòðîííèé ãåòåðîïåðåõ³ä p–p ~ p–p-ãåòåðîïåðåõ³ä, ä³ðêîâî-ä³ðêîâèé ãåòåðîïåðåõ³ä reverse-biased ~ îáåðíåíîçì³ùåíèé ïåðåõ³ä heterostructure ãåòåðîñòðóêòóðà ballistic ~ áàë³ñòè÷íà ãåòåðîñòðóêòóðà buried ~ çàãëèáëåíà [ïðèõîâàíà] ãåòåðîñòðóêòóðà
multiple-layer ~ áàãàòîøàðîâà ãåòåðîñòðóêòóðà selectively doped ~ ñåëåêòèâíî ëåãîâàíà ãåòåðîñòðóêòóðà semiconductor gated ~ ãåòåðîñòðóêòóðà ç íàï³âïðîâ³äíèêîâèì çàòâîðîì strip(-geometry)~ ñìóæêîâà ãåòåðîñòðóêòóðà heterotransition ãåòåðîïåðåõ³ä (äèâ. ò-æ heterojunction) hierarhy: logical ~ ëîã³÷íà ³ºðàðõ³ÿ, ³ºðàðõ³÷íå ïðåäñòàâëåííÿ ïðîåêòó Â²Ñ íà ëîã³÷íîìó ð³âí³ memory ~ ³ºðàðõ³ÿ ÇÏ physical ~ ô³çè÷íà ³ºðàðõ³ÿ, ³ºðàðõ³÷íå ïðåäñòàâëåííÿ ô³çè÷íî¿ ñòðóêòóðè slicing ~ ³ºðàðõ³ÿ òîíêèõ øàð³â (äëÿ âèçíà÷åííÿ äâîâèì³ðíèõ òîïîëîã³÷íèõ ôîðì â êðåìí³ºâîìó êîìï³ëÿòîð³ DEA) high: logical ~ âèñîêèé ëîã³÷íèé ð³âåíü high-density ç âèñîêîþ ãóñòèíîþ óïàêîâêè, ç âèñîêîþ ãóñòèíîþ ðîçì³ùåííÿ åëåìåíò³â highly-doped ñèëüíîëåãîâàíèé high-performance âèñîêîÿê³ñíèé highway 1. ñòðóìîïðîâ³äíà äîð³æêà; ç’ºäíàííÿ 2. øèíà high-yield ç âèñîêèì âèõîäîì ãîäíèõ hill, hillock ãîðá(èê), âèñòóï (äåôåêò) etch ~ ãîðáèê òðàâëåííÿ growth ~ ãîðáèê ðîñòó hogging: current ~ íåð³âíîì³ðíèé ðîçïîä³ë ñòðóìó, ïåðåõîïëåííÿ ñòðóìó (â ðåçóëüòàò³ íåîäíàêîâîãî îïîðó ïðîâ³äíèê³â) holder 1. êðèñòàëîíîñ³é, êðèñòàëîòðèìà÷ (äèâ. òæ carrier) 2. êàñåòà IC ~ êðèñòàëîíîñ³é äëÿ ²Ñ molded ~ ïðåñîâàíèé (ïëàñòìàñîâèé) êðèñòàëîíîñ³é seed ~ óòðèìóâà÷ ïðèìàíêè substrate ~ 1. óòðèìóâà÷ ï³äêëàäîê, ï³äêëàäêîòðèìà÷ (ó âàêóóìí³é êàìåð³) 2. êàñåòà äëÿ ï³äêëàäîê vacuum-suction ~ âàêóóìíèé óòðèìóâà÷; âàêóóìíå çàõîïëåííÿ wafer ~ êàñåòà äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí hole 1. ä³ðêà (íîñ³é çàðÿäó) 2. îòâ³ð
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hyb alignment ~ îòâ³ð äëÿ ñóì³ùåííÿ; êîòèðóâàëüíèé îòâ³ð captured ~ çàõîïëåíà ä³ðêà component ~ îòâ³ð (íàïð. íà ïëàò³) äëÿ âèâîäó êîìïîíåíòó contact (ing) ~ êîíòàêòíå â³êíî deep-etch ~ îòâ³ð, ñôîðìîâàíèé ãëèáîêèì òðàâëåííÿì excess ~s íàäì³ðí³ ä³ðêè indexing ~s ô³êñóþ÷³ îòâîðè (äðóêîâàíî¿ ïëàò³); âñòàíîâëþâàëüí³ îòâîðè lead ~ ìîíòàæíèé îòâ³ð; îòâ³ð äëÿ âèâîäó mask ~ â³êíî â ìàñö³ mobile ~s ðóõîì³ ä³ðêè mounting ~ ìîíòàæíèé îòâ³ð passivation ~ îòâ³ð â çàõèñíîìó îêñèäíîìó øàð³ plated-through ~ ìåòàë³çîâàíèé êð³çíèé îòâ³ð potential ~ ïîòåíö³àëüíà ÿìà registration ~ âñòàíîâëþâàëüíèé îòâ³ð sprocket ~ ïåðôîðàö³éíèé îòâ³ð, ïåðôîðàö³ÿ through-metallized ~ ìåòàë³çîâàíèé íàñêð³çíèé îòâ³ð transmission ~s ïðîçîð³ â³êíà (â ìàñêàõ äëÿ ³îííî¿ ë³òîãðàô³¿) trapped ~s çàõîïëåí³ ä³ðêè via ~ íàñêð³çíèé îòâ³ð (â ³çîëÿö³éíîìó, øàð³ áàãàòîð³âíåâèõ ç’ºäíàíü) homoepitaxy ãîìîåï³òàêñ³ÿ homogeneity ãîìîãåíí³ñòü homojunction ãîìîïåðåõ³ä shallow ~ ì³ëêèé ãîìîïåðåõ³ä hood âèòÿæíà øàôà; âèòÿæíèé êîâïàê dust ~ ïèëåíåïðîíèêíèé áîêñ exhaust [fume] ~ âèòÿæíà øàôà nitrogenous ~ àçîòíà øàôà hopper áóíêåð; çàâàíòàæóâàëüíà âîðîíêà; áóíêåðíå äæåðåëî æèâëåííÿ charging ~ áóíêåð; çàâàíòàæóâàëüíà âîðîíêà feed ~ áóíêåðíå äæåðåëî æèâëåííÿ intake ~ âõ³äíà çàâàíòàæóâàëüíà âîðîíêà load (ing) ~ áóíêåð; çàâàíòàæóâàëüíà âîðîíêà hopping ñòðèáêîâèé ìåõàí³çì (åëåêòðîïðîâ³äíîñò³) host: crystalline ~ îñíîâà êðèñòàëà
dopant ~ (òâåðäå) äæåðåëî äîì³øêè planar dopant ~ ïëîñêå äæåðåëî äîì³øêè housing: epoxy molded ~ ïðåñîâàíèé êîðïóñ ç åïîêñèäíî¿ ñìîëè hermetic ~ ãåðìåòèçîâàíèé êîðïóñ watertight ~ ãåðìåòè÷íèé êîðïóñ humidity âîëîã³ñòü absolute ~ àáñîëþòíà âîëîã³ñòü ambient ~ âîëîã³ñòü íàâêîëèøíüîãî ñåðåäîâèùà relative ~ â³äíîñíà âîëîã³ñòü specific ~ ïèòîìà âîëîã³ñòü hybrid 1. ã³áðèäíà ²Ñ, Ã²Ñ 2. ã³áðèäíèé analog ~ àíàëîãîâà Ã²Ñ bare ~ áåçêîðïóñíà Ã²Ñ (ç ïëàñòìàñîâèì ïîêðèòòÿì) chip-and-wire ~ Ã²Ñ ç äðîòÿíèì ìîíòàæåì êðèñòàë³â custom [customized] ~ çàìîâëåíà òÑ; ñïåö³àë³çîâàíà Ã²Ñ digital ~ öèôðîâà Ã²Ñ encapsulated ~ 1. Ã²Ñ 2, ùî ãåðìåòèçóºòüñÿ. Ã²Ñ â ïëàñòìàñîâîìó êîðïóñ³ filter ~ Ã²Ñ ô³ëüòðó gate array ~ Ã²Ñ ç áàçîâèìè ìàòðè÷íèìè êðèñòàëàìè large-scale (integration) ~ Ã²Ñ ç âèñîêèì ñòóïåíåì ³íòåãðàö³¿, âåëèêà òÑ, ÂÃ²Ñ linear ~ ë³í³éíà Ã²Ñ multichip ~ áàãàòîêðèñòàëüíà Ã²Ñ multilayer ~ Ã²Ñ ç áàãàòîøàðîâîþ ñòðóêòóðîþ, áàãàòîøàðîâà Ã²Ñ parylene-coated ~ Ã²Ñ ç ïàðè-ëåíîâèì ïîêðèòòÿì pin-FET ~ Ã²Ñ íà îñíîâ³ ð–i–n-ä³îä³â ³ ïîëüîâèõ òðàíçèñòîð³â plastic-coated [plastic-encapsulated] ~ 1. òÑ, ùî ãåðìåòèçóºòüñÿ ïëàñòìàñîþ 2. Ã²Ñ â ïëàñòìàñîâîìó êîðïóñ³ tape bonded ~ òÑ, âèãîòîâëåíà ç âèêîðèñòàííÿì ìîíòàæó êðèñòàë³â íà ñòð³÷êîâèõ íîñ³ÿõ thick-film solder-reflow ~ òîâñòîïë³âêîâà Ã²Ñ íà áåçêîðïóñíèõ êîìïîíåíòàõ ç êóëüêîâèìè âèâîäàìè ç ïðèïîþ thin-film ~ òîíêîïë³âêîâà Ã²Ñ hybridization 1. ã³áðèäèçàö³ÿ 2. ðåàë³çàö³ÿ ó âèãëÿä³ Ã²Ñ orbital ~ ã³áðèäèçàö³ÿ îðá³òàëåé
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ima hydride ã³äðèä fluorine ~ ôòîðèñòèé âîäåíü, HF hydrocarbon âóãëåâîäåíü fluorination ~ ôòîðóþ÷èé âóãëåâîäåíü hydrogen âîäåíü, Í hydrogenation ã³äðîãåí³çàö³ÿ, ã³äðóâàííÿ hydroplaning ã³äðîïëîùèííà ïîë³ðîâêà hygrometer ã³ãðîìåòð dew-point ~ êîíäåíñàö³éíèé ã³ãðîìåòð
inverted ~ ïåðåâåðíåíå çîáðàæåííÿ latent ~ ïðèõîâàíå çîáðàæåííÿ mask ~ ìàëþíîê øàáëîíà; ìàëþíîê ìàñêè multiple ~ ìóëüòèïë³êîâàíå çîáðàæåííÿ negative ~ íåãàòèâíå çîáðàæåííÿ, íåãàòèâ point ~ òî÷êîâå çîáðàæåííÿ positive ~ ïîçèòèâíå çîáðàæåííÿ, ïîçèòèâ replicated ~ ìóëüòèïë³êîâàíå çîáðàæåííÿ reticle ~ ìàëþíîê ïðîì³æíîãî ôîòîøàáëîíó; ìàëþíîê ïðîì³æíîãî ôîòîîðèã³íàëó I reverse ~ ïåðåâåðíåíå çîáðàæåííÿ sharp ~ ð³çêå [÷³òêå] çîáðàæåííÿ identification 1. ³äåíòèô³êàö³ÿ; ðîçï³çíàâàííÿ; weak beam ~ çîáðàæåííÿ â ñëàáêîìó ïó÷êó ï³çíàâàííÿ 2. ïîçíà÷åííÿ; ìàðê³ðîâêà imager ôîðìóâà÷ â³äåîñèãíàë³â, ôîðìóâà÷ chip ~ 1. ìàðê³ðîâêà êðèñòàëà 2. ìàðê³ðîâêà (ñèãíàë³â) çîáðàæåíü ²Ñ area ~ ìàòðè÷íèé ôîðìóâà÷ â³äåîñèãíàë³â image ~ ðîçï³çíàâàííÿ îáðàç³â charge-coupled (device) ~ ôîðìóâà÷ lead ~ ïîçíà÷åííÿ âèâîä³â â³äåîñèãíàë³â íà ÏÇÇ pattern ~ ðîçï³çíàâàííÿ îáðàç³â color ~ ôîðìóâà÷ (ñèãíàë³â) êîëüîðîâèõ photoexposed wafer ~ ³äåíòèô³êàö³ÿ çîáðàæåíü íàï³âïðîâ³äíèêîâèõ ïëàñòèí ï³ñëÿ infrared ~ ôîðìóâà÷ ²×-â³äåîñèãíàë³â åêñïîíóâàííÿ solid-state ~ òâåðäîò³ëüíèé ôîðìóâà÷ wafer ~ 1. ³äåíòèô³êàö³ÿ â³äåîñèãíàë³â íàï³âïðîâ³äíèêîâèõ ïëàñòèí 2. ìàðê³ðîâêà imagery 1. çîáðàæåííÿ; ìàëþíêè 2. íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè ôîðìóâàííÿ çîáðàæåíü; ôîðìóâàííÿ IGFET ïîëüîâèé òðàíçèñòîð ç ³çîëüîâàíèì ìàëþíê³â çàòâîðîì (äèâ. ò-æ FET) diazo ~ ôîòîë³òîãðàô³ÿ ç âèêîðèñòàííÿì depletion-type ~ ïîëüîâèé òðàíçèñòîð ç ôîòîðåçèñò³â íà îñíîâ³ ä³àçîñïîëóê ³çîëüîâàíèì çàòâîðîì, ùî ïðàöþº â ðåæèì³ mosaic ~ ôîðìóâàííÿ çîáðàæåíü ç çá³äíåííÿ âèêîðèñòàííÿì ìîçà¿÷íî¿ ìàòðèö³ enhancement-type ~ ïîëüîâèé òðàíçèñòîð ç ³çîëüîâàíèì çàòâîðîì, ùî ïðàöþº â imaging 1. â³çóàë³çàö³ÿ 2. ôîðìóâàííÿ çîáðàæåíü; ôîðìóâàííÿ ìàëþíêà; ðåæèì³ çáàãà÷åííÿ åêñïîíóâàííÿ (äèâ. ò-æ exposure) ikon ï³êòîãðàìà acoustic ~ â³çóàë³çàö³ÿ àêóñòè÷íèõ illumination 1. îñâ³òëåííÿ 2. îñâ³òëåí³ñòü 3. çîáðàæåíü îïðîì³íþâàííÿ electron-beam ~ ôîðìóâàííÿ çîáðàæåíü image çîáðàæåííÿ; ìàëþíîê; îáðàç | ìåòîäîì åëåêòðîííî-ïðîìåíåâî¿ ë³òîãðàô³¿ ôîðìóâàòè çîáðàæåííÿ; ôîðìóâàòè electrooptical ~ åëåêòðîîïòè÷íå ìàëþíîê (äèâ. ò-æ pattern) ôîðìóâàííÿ çîáðàæåíü blurred ~ ðîçìèòå çîáðàæåííÿ fine-line [high-resolution] ~ ôîðìóâàííÿ bright field ~ çîáðàæåííÿ â ñâ³òëîìó ïîë³ ìàëþíêà ç âèñîêèì äîçâîëîì, ôîðìóâàííÿ charge ~ ïîòåíö³àëüíèé ðåëüºô ìàëþíêà ç åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â circuit ~ çîáðàæåííÿ ñõåìè; ìàëþíîê ñõåìè infrared ~ ôîðìóâàííÿ ²×-çîáðàæåíü dark field ~ çîáðàæåííÿ â òåìíîìó ïîë³ laser ~ 1. ëàçåðíå ôîðìóâàííÿ ìàëþíêà 2. developed ~ ïðîÿâëåíèé ìàëþíîê ëàçåðíå åêñïîíóâàííÿ diffuse ~ ðîçìèòå çîáðàæåííÿ multiple ~ ìóëüòèïë³êàö³ÿ çîáðàæåíü distorted ~ ñïîòâîðåíå çîáðàæåííÿ optical ~ 1. ôîðìóâàííÿ ìàëþíêà ìåòîäîì fuzzy ~ íå÷³òêå çîáðàæåííÿ ôîòîë³òîãðàô³¿ 2. îïòè÷íå åêñïîíóâàííÿ geometric ~ òîïîëîã³÷íå ïðåäñòàâëåííÿ êîìïîíåíò³â ²Ñ
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imp projection ~ 1. ôîðìóâàííÿ ìàëþíêà ìåòîäîì ïðîåêö³éíî¿ ë³òîãðàô³¿ 2. ïðîåêòóâàííÿ çîáðàæåíü thermal ~ òåïëîáà÷åííÿ ultraviolet ~ 1. ôîðìóâàííÿ ÓÔ-çîáðàæåíü 2. åêñïîíóâàííÿ ÓÔ-âèïðîì³íþâàííÿì X-ray ~ ôîðìóâàííÿ ìàëþíêà ìåòîäîì ðåíòãåí³âñüêî¿ ë³òîãðàô³¿ imbed çàíóðþâàòè; çàëèâàòè (íàïð. ãåðìåòèêîì) immersion çàíóðåííÿ; çàíóðåííÿ immunity: alpha ~ ðàä³àö³éíà ñò³éê³ñòü ïî â³äíîøåííþ äî á-âèïðîì³íþâàííÿ electromigration ~ ñò³éê³ñòü äî åëåêòðîì³ãðàö³¿ interference ~ ïåðåøêîäîñò³éê³ñòü; ïåðåøêîäîçàõèùåí³ñòü impact: electron ~ åëåêòðîííå áîìáàðäóâàííÿ ion ~ ³îííå áîìáàðäóâàííÿ impedance ïîâíèé îï³ð, ³ìïåäàíñ avalanche ~ ïîâíèé îï³ð (ä³îäà) â îáëàñò³ ëàâèííîãî ïðîáîþ breakdown ~ ïîâíèé îï³ð â îáëàñò³ ïðîáîþ collector-base ~ ïîâíèé îï³ð ïåðåõîäó êîëåêòîðà coupling ~ ïîâíèé îï³ð çâ’ÿçêó forward ~ ïðÿìèé ïîâíèé îï³ð input ~ âõ³äíèé ïîâíèé îï³ð inverse ~ çâîðîòíèé ïîâíèé îï³ð output ~ âèõ³äíèé ïîâíèé îï³ð small-signal ~ ïîâíèé îï³ð â ðåæèì³ ìàëîãî ñèãíàëó transfer ~ ïåðåäàâàëüíèé ïîâíèé îï³ð imperfection äåôåêò, íåäîñêîíàë³ñòü crystal ~ ñòðóêòóðíèé äåôåêò, äåôåêò êðèñòàë³÷íèõ ãðàòîê interstitial ~ äåôåêò óïðîâàäæåííÿ lattice ~ äåôåêò êðèñòàë³÷íèõ ãðàòîê, ñòðóêòóðíèé äåôåêò physical ~ ô³çè÷íèé äåôåêò point ~ òî÷êîâèé äåôåêò structural ~ ñòðóêòóðíèé äåôåêò, äåôåêò êðèñòàë³÷íèõ ãðàòîê substitution ~ äåôåêò çàì³ùåííÿ implant 1. ³îííî-³ìïëàíòîâàíà äîì³øêà (äèâ. ò-æ impurity) | ³ìïëàíòóâàòè ³îíè äîì³øêè 2. ³îííà ³ìïëàíòàö³ÿ, ³îííå ëåãóâàííÿ (äèâ. ò-æ implantation) 3. ð³äê. ³îííî-
³ìïëàíòîâàíà îáëàñòü compensation ~ 1. ³îííî-³ìïëàíòîâàíà êîìïåíñóþ÷à äîì³øêà 2. êîìïåíñàö³éíà ³îííà ³ìïëàíòàö³ÿ depletion (ion) ~ ³îííî-³ìïëàíòîâàíà çá³äíåíà îáëàñòü enhancement (ion) ~ ³îííî-³ìïëàíòîâàíà çáàãà÷åíà îáëàñòü high-current density ~ ³îííà ³ìïëàíòàö³ÿ ïðè âèñîê³é ãóñòèí³ (³îííîãî) ñòðóìó single-ion ~ îäíîêðàòíà ³îííà ³ìïëàíòàö³ÿ source-drain ~ ³îííî-³ìïëàíòîâàí³ îáëàñò³ ñòîêó ³ âèòîêó (ïîëüîâîãî òðàíçèñòîðà) well ~ ³îííå ëåãóâàííÿ êèøåí³ implantation 1. ³îííà ³ìïëàíòàö³ÿ, ³îííå ëåãóâàííÿ (äèâ. ò-æ implant) 2. ð³äê. ³îííî³ìïëàíòîâàíà îáëàñòü amorphous ~ ³îííà ³ìïëàíòàö³ÿ â àìîðôíèé ìàòåð³àë angled ion ~ ³îííà ³ìïëàíòàö³ÿ ï³ä êóòîì, ïîõèëà ³îííà ³ìïëàíòàö³ÿ arsenic ion ~ ³ìïëàíòàö³ÿ ³îí³â ìèø’ÿêó bipolar ion ~ ³îííà ³ìïëàíòàö³ÿ äëÿ á³ïîëÿðíèõ ïðèëàä³â blanket ion ~ ñóö³ëüíà ³îííà ³ìïëàíòàö³ÿ deep ion ~ ãëèáîêà ³îííà ³ìïëàíòàö³ÿ double-ion ~ äâîêðàòíà ³îííà ³ìïëàíòàö³ÿ; ³îííà ³ìïëàíòàö³ÿ äâîõ äîì³øîê emitter ion ~ ³îííà ³ìïëàíòàö³ÿ äëÿ ôîðìóâàííÿ åì³òåðà field (-oxide) ~ ³îííà ³ìïëàíòàö³ÿ ÷åðåç çàõèñíèé øàð îêñèäó high-dosage [high-dose] ion ~ âèñîêîäîçîâàíà ³îííà ³ìïëàíòàö³ÿ high-energy ion ~ ³ìïëàíòàö³ÿ ³îí³â âèñîêî¿ åíåð㳿, âèñîêîåíåðãåòè÷íà ³îííà ³ìïëàíòàö³ÿ high-level ion ~ ñèëüíà ³îííà ³ìïëàíòàö³ÿ hot ~ «ãàðÿ÷à» ³îííà ³ìïëàíòàö³ÿ, ³îííà ³ìïëàíòàö³ÿ íàãð³òîãî íàï³âïðîâ³äíèêà ion(-beam)~ ³îííà ³ìïëàíòàö³ÿ, ³îííå ëåãóâàííÿ low-dosage [low-dose] ion ~ ñëàáîäîçîâàíà ³îííà ³ìïëàíòàö³ÿ low-energy ion ~ ³ìïëàíòàö³ÿ ³îí³â íèçüêî¿ åíåð㳿, íèçüêîåíåðãåòè÷íà ³îííà ³ìïëàíòàö³ÿ low-level ion ~ ñëàáêà ³îííà ³ìïëàíòàö³ÿ masked ion ~ ³îííà ³ìïëàíòàö³ÿ ÷åðåç ìàñêó
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inc maskless ~ áåçìàñêîâà ³îííà ³ìïëàíòàö³ÿ mask-life ~ ï³äâèùåííÿ äîâãîâ³÷íîñò³ (ãîñòðîñôîêóñîâàíèì ³îííèì ïó÷êîì) øàáëîí³â molecular ion ~ ³ìïëàíòàö³ÿ ³îí³çîâàíèõ impurity 1. (ëåãóþ÷à) äîì³øêà 2. çàáðóäíåííÿ, ìîëåêóë íåáàæàíà äîì³øêà multiple ~ áàãàòîêðàòíà ³îííà ³ìïëàíòàö³ÿ acceptor ~ àêöåïòîðíà äîì³øêà multiple energy (ion) ~ ³ìïëàíòàö³ÿ ³îí³â ç atomic ~ àòîìíà äîì³øêà ð³çíîþ åíåð㳺þ background ~ ôîíîâà äîì³øêà n-type ion ~ ³ìïëàíòàö³ÿ ³îí³â äîíîðíî¿ base ~ äîì³øêà â áàçîâ³é îáëàñò³ äîì³øêè channel-stop ~ äîì³øêà äëÿ ôîðìóâàííÿ oblique-rotating ~ ïîõèëà ³îííà ³ìïëàíòàö³ÿ îáìåæóâà÷³â êàíàëó â ï³äêëàäêó, ùî îáåðòàºòüñÿ compensated ~ ñïîìïåíñîâàíà äîì³øêà post emitter ion ~ ³îííà ³ìïëàíòàö³ÿ ï³ñëÿ compensating ~ êîìïåíñóþ÷à äîì³øêà ôîðìóâàííÿ åì³òåðà conductivity (-type-) determining ~ äîì³øêà, predep ~ çàãàíÿííÿ ³îí³â äîì³øêè (ïåðøà ùî âèçíà÷ຠòèï ïèòîìî¿ ïðîâ³äíîñò³ ñòàä³ÿ â äâîõñòàä³éí³é ³îíí³é ³ìïëàíòàö³¿) íàï³âïðîâ³äíèêà p-type ion ~ ³ìïëàíòàö³ÿ ³îí³â àêöåïòîðíî¿ contaminating ~ çàáðóäíåííÿ, íåáàæàíà ˆ:äîì³øêè äîì³øêà self-aligned ion ~ ñàìîñóì³ùåíà ³îííà deep-level [deep-lying] ~ äîì³øêà, ùî ³ìïëàíòàö³ÿ ñòâîðþº ãëèáîêèé (åíåðãåòè÷íèé) ð³âåíü single-ion ~ îäíîêðàòíà ³îííà ³ìïëàíòàö³ÿ; diffusant [diffusing] ~ äèôóçàíò ³ìïëàíòàö³ÿ ³îí³â îäí³º¿ äîì³øêè donor ~ äîíîðíà äîì³øêà surface-wide (ion) ~ ³îííà ³ìïëàíòàö³ÿ ó âñþ dopant [doping] ~ ëåãóþ÷à äîì³øêà ïîâåðõíþ ï³äêëàäêè emitter ~ äîì³øêà â åì³òåðí³é îáëàñò³ tilt-angle ~ ³îííà ³ìïëàíòàö³ÿ ï³ä (ãîñòðèì) free carrier ~ äîì³øêà, ùî ñòâîðþº â³ëüí³ êóòîì, ïîõèëà ³îííà ³ìïëàíòàö³ÿ íîñ³¿ Implant-Epi ô³ðì. åï³òàêñ³àëüíå group V ~ äîì³øêà (åëåìåíòà) V ãðóïè íàðîùóâàííÿ íàï³âïðîâ³äíèêà ³ ³ìïëàíòàö³ÿ implanted ~ ³ìïëàíòîâàíà äîì³øêà ³îí³â àçîòó äëÿ ôîðìóâàííÿ í³òðèäó êðåìí³þ interstitial ~ äîì³øêà âïðîâàäæåííÿ implanter óñòàíîâêà ³îííî¿ ³ìïëàíòàö³¿, ion implanted ~ ³îííî-³ìïëàíòîâàíà óñòàíîâêà ³îííîãî ëåãóâàííÿ äîì³øêà high-current ~ ïîòóæíà óñòàíîâêà ³îííî¿ lifetime killing [lifetime shortening] ~ ³ìïëàíòàö³¿ äîì³øêà, ùî çìåíøóº ÷àñ æèòòÿ íîñ³¿â high-output ~ âèñîêîïðîäóêòèâíà óñòàíîâêà migrating ~ ì³ãðóþ÷à äîì³øêà ³îííî¿ ³ìïëàíòàö³¿ molecular ~ ìîëåêóëÿðíà äîì³øêà ion (-beam) ~ óñòàíîâêà ³îííî¿ ³ìïëàíòàö³¿, n-type ~ äîíîðíà äîì³øêà óñòàíîâêà ³îííîãî ëåãóâàííÿ polarized ~ ïîëÿðèçîâàíà äîì³øêà oxygen ~ óñòàíîâêà ³ìïëàíòàö³¿ ³îí³â êèñíþ p-type ~ àêöåïòîðíà äîì³øêà implementation ðåàë³çàö³ÿ; ñòâîðåííÿ shallow-level [shallow-lying] ~ äîì³øêà, ùî custom ~ ðåàë³çàö³ÿ (àïàðàòóðà) íà îñíîâ³ ñòâîðþº ì³ëêèé (åíåðãåòè÷íèé) ð³âåíü spin-on ~ äîì³øêà, ùî íàíîñèòüñÿ íà çàìîâëåíèõ ²Ñ; ñòâîðåííÿ çàìîâëåíèõ ²Ñ; ïîâåðõíþ íàï³âïðîâ³äíèêà ñòâîðåííÿ ñïåö³àë³çîâàíèõ ²Ñ stoichiometric ~ ñòåõ³îìåòðè÷íà äîì³øêà gate-level ~ ðåàë³çàö³ÿ (²Ñ) íà îñíîâ³ substitutional ~ äîì³øêà çàì³ùåííÿ ëîã³÷íèõ åëåìåíò³â transition metal ~ äîì³øêîâèé ïåðåõ³äíèé standard cell-based ~ ðåàë³çàö³ÿ (²Ñ) ç ìåòàë àðõ³òåêòóðîþ íà îñíîâ³ ñòàíäàðòíèõ trap ~ äîì³øêà, ùî ñòâîðþº ïàñòêè êîì³ðîê ultratrace ~ ì³êðîñë³äè äîì³øêè impregnant ïðîñî÷óþ÷à ðå÷îâèíà impurity-doped ëåãîâàíèé impregnation ïðîñî÷åííÿ, ïðîñî÷åííÿ improvement: inclusion âêëþ÷åííÿ, âêðàïëåííÿ incorporation:
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inp impurity-dopant ~ ââåäåííÿ ëåãóþ÷î¿ äîì³øêè, ëåãóâàííÿ Indalloy ³íäàëîé (ïðèïàéíà ïàñòà) index 1. êîåô³ö³ºíò; ïîêàçíèê, ³íäåêñ 2. (ïðåöèç³éíå êîíòðîëüîâàíå) êðîêîâå ïåðåì³ùåííÿ (íàïð. êîîðäèíàòíîãî ñòîëó) 3. ³íäåêñóâàòè absorption ~ ïîêàçíèê ïîãëèíàííÿ crystal ~ ³íäåêñ ̳ëëåðà go/no-go ~ ïîêàçíèê ïðèäàòíîñò³ (ïðèëàäó) Miller ~ ³íäåêñ ̳ëëåðà refractive ~ ïîêàçíèê çàëîìëåííÿ viscosity ~ ³íäåêñ â’ÿçêîñò³ indexer ïðèñòð³é ïðåöèç³éíîãî êðîêîâîãî ïåðåì³ùåííÿ (íàïð. êîîðäèíàòíîãî ñòîëó) binder ~ ïðèñòð³é êðîêîâîãî ïåðåì³ùåííÿ çâàðþâàëüíîãî ³íñòðóìåíòó indexing ïðåöèç³éíå êðîêîâå ïåðåì³ùåííÿ (íàïð. êîîðäèíàòíîãî ñòîëó) in-diffusion ïðÿìà äèôóç³ÿ, äèôóç³ÿ âñåðåäèíó îá’ºìó (ï³äêëàäêè) inductance 1. ³íäóêòèâí³ñòü 2. êîòóøêà ³íäóêòèâíîñò³ distributed ~ ðîçïîä³ëåíà ³íäóêòèâí³ñòü lumped ~ çîñåðåäæåíà ³íäóêòèâí³ñòü spray [spurious] ~ ïàðàçèòíà ³íäóêòèâí³ñòü superconducting ~ íàäïðîâ³äíèêîâà ³íäóêòèâí³ñòü inductivity 1. ³íäóêòèâí³ñòü 2. ä³åëåêòðè÷íà ïðîíèêí³ñòü inductor 1. êîòóøêà ³íäóêòèâíîñò³ 2. ³íäóêòîð inefficiency: transfer ~ íååôåêòèâí³ñòü ïåðåíåñåííÿ çàðÿäó (â ÏÇÇ) infusion 1. çàãîíêà äîì³øêè (ïåðøà ñòàä³ÿ äâîõñòàä³éíî¿ äèôó糿) 2. ââåäåííÿ, óïðîâàäæåííÿ ingot (íàï³âïðîâ³äíèêîâèé) çëèòîê Czochralski grown ~ êðèñòàë, âèðîùåíèé ïî ìåòîäó ×îõðàëüñüêîãî monocrystalline ~ ìîíîêðèñòàë³÷íèé çëèòîê polycrystalline ~ ïîë³êðèñòàë³÷íèé çëèòîê single-crystal ~ ìîíîêðèñòàë³÷íèé çëèòîê ingress contaminants ïðîíèêíåííÿ çàáðóäíåíü inhibit: bus address increment ~ çàáîðîíà ïðèðîñòó àäðåñè øèíè (ïðè ïðîåêòóâàíí³ ïðîöåñîðíèõ ²Ñ) inhomogeneity:
dopant ~ íåîäíîð³äí³ñòü ðîçïîä³ëó äîì³øêè injection ³íæåêö³ÿ avalanche ~ ëàâèííà ³íæåêö³ÿ bipolar ~ á³ïîëÿðíà ³íæåêö³ÿ charge-carrier ~ ³íæåêö³ÿ íîñ³¿â çàðÿäó contact ~ êîíòàêòíà ³íæåêö³ÿ current ~ ³íæåêö³ÿ íîñ³¿â çàðÿäó double ~ á³ïîëÿðíà ³íæåêö³ÿ; ïîäâ³éíà [äâîêðàòíà] ³íæåêö³ÿ fill-and-spill ~ ³íæåêö³ÿ ñïîñîáîì ïåðåäçàðÿäêè (â ÏÇÇ) Fowler-Nordheim tunnel ~ ³íæåêö³ÿ òóíåëþâàííÿì Ôàóëåðà–Íîðäãåéìà high-level ~ ñèëüíà ³íæåêö³ÿ hot-electron ~ ³íæåêö³ÿ ãàðÿ÷èõ åëåêòðîí³â low-level ~ ñëàáêà ³íæåêö³ÿ monopolar ~ ìîíîïîëÿðíà ³íæåêö³ÿ plane ~ ïëîùèííà ³íæåêö³ÿ single ~ ìîíîïîëÿðíà ³íæåêö³ÿ; îäíîêðàòíà ³íæåêö³ÿ tunnel ~ òóíåëüíà ³íæåêö³ÿ injector 1. ³íæåêòîð, åì³òåðíà îáëàñòü ð–n–ðòðàíçèñòîðà (â ²2Ë) 2. øïðèö double-diffused ~ ³íæåêòîð, ñôîðìîâàíèé ïîäâ³éíîþ äèôó糺þ self-aligned ~ ñàìîñóì³ùåíèé ³íæåêòîð ink 1. ïàñòà (äëÿ òîâñòîïë³âêîâîþ òåõíîëî㳿) 2. ôàðáíèê, ôàðáà à to ~ out ïîçíà÷àòè ôàðáíèêîì äåôåêòí³ êðèñòàëè (íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³) noble ~ ïàñòà íà îñíîâ³ äîðîãîö³ííèõ ìåòàë³â non-noble ~ ïàñòà íà îñíîâ³ íåäîðîãîö³ííèõ ìåòàë³â polymer ~ ïîë³ìåðíà ïàñòà resistor ~ ïàñòà äëÿ òîâñòîïë³âêîâèõ ðåçèñòîð³â inlay: Au ~ çîëîòå ëîêàëüíå ïîêðèòòÿ (íàïð. íà êîíòàêòíîìó ìàéäàí÷èêó) input 1. âõ³ä; ââ³ä 2. âõ³äíèé ïðèñòð³é active ~ àêòèâíèé âõ³ä (â D-àë-ãîðèòì³) bipolar ~ 1. âõ³ä íà á³ïîëÿðíèõ òðàíçèñòîðàõ, á³ïîëÿðíèé âõ³ä 2. âõ³äíèé á³ïîëÿðíèé òðàíçèñòîð digital ~ âõ³äíà öèôðîâà ²Ñ edge sensitive ~ âõ³ä, ÷óòëèâèé äî ôðîíòó ñèãíàëó emitter-follower ~ âõ³äíèé åì³òåðíèé ïîâòîðþâà÷
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int FET ~ âõ³äíèé ïîëüîâèé òðàíçèñòîð illegal ~ çàáîðîíåíà êîìá³íàö³ÿ âõ³äíèõ ñèãíàë³â interactive ~ ³íòåðàêòèâíå ââåäåííÿ äàíèõ inverting ~ ³íâåðòóþ÷èé âõ³ä legal ~ äîçâîëåíà êîìá³íàö³ÿ âõ³äíèõ ñèãíàë³â multiplexed ~s ìóëüòèïëåêñîâàí³ âõîäè non-inverting ~ íå³íâåðòóþ÷èé âõ³ä Schottky-clamped ~ âõ³äíèé ô³êñóþ÷èé ä³îä Øîòê³ sensitive ~ gate àêòèâíèé âõ³ä ëîã³÷íîãî åëåìåíòó wave form ~ âõ³äíà ³íôîðìàö³ÿ ó âèãëÿä³ ãðàô³÷íîãî ïðåäñòàâëåííÿ ³ìïóëüñó (çâè÷íî íà ðîáî÷èõ ñòàíö³ÿõ) input/output 1. óâåäåííÿ-âèâåäåííÿ 2. ïðèñòð³é óâåäåííÿ-âèâåäåííÿ inserter ñêëàäàëüíî-ìîíòàæíà óñòàíîâêà axial-lead ~ óñòàíîâêà äëÿ ìîíòàæó êîìïîíåíò³â ç îñüîâèìè âèâîäàìè DIP ~ ñêëàäàëüíî-ìîíòàæíà óñòàíîâêà äëÿ DIP-êîðïóñ³â pantograph ~ ñêëàäàëüíî-ìîíòàæíà óñòàíîâêà ïàíòîãðàôà radial-lead ~ óñòàíîâêà äëÿ ìîíòàæó êîìïîíåíò³â ç ðàä³àëüíèìè âèâîäàìè insertion 1. ìîíòàæ, óñòàíîâêà (íàïð. êîìïîíåíò³â) 2. îñâîºííÿ; óïðîâàäæåííÿ (íàïð. íîâî¿ òåõí³êè) automatic ~ àâòîìàòè÷íèé ìîíòàæ manual ~ ðó÷íèé ìîíòàæ technology ~ îñâîºííÿ (íîâî¿) òåõí³êè (íàïð. ÑѲÑ); óïðîâàäæåííÿ (íîâî¿) òåõí³êè inspection êîíòðîëü; ïåðåâ³ðêà acceptance ~ ïðèéìàëüíèé êîíòðîëü appearance ~ â³çóàëüíèé êîíòðîëü chemical ~ õ³ì³÷íèé êîíòðîëü (íàïð. ãàçîâîãî ñåðåäîâèùà) dimensional ~ êîíòðîëü ðîçì³ð³â electrical ~ êîíòðîëü åëåêòðè÷íèõ ïàðàìåòð³â functional ~ ïåðåâ³ðêà ôóíêö³îíóâàííÿ go/no-go ~ ïåðåâ³ðêà ïðèäàòíîñò³ (ïðèëàä³â) high-magnification ~ â³çóàëüíèé êîíòðîëü ï³ä ì³êðîñêîïîì âåëèêîãî çá³ëüøåííÿ incoming ~ âõ³äíèé êîíòðîëü pre-cap ~ êîíòðîëü ïåðåä ìîíòàæåì â êîðïóñ sampling ~ âèá³ðêîâèé êîíòðîëü
surface ~ êîíòðîëü (ÿêîñò³) ïîâåðõí³ visual ~ â³çóàëüíèé êîíòðîëü inspector: photomask ~ ïðèëàä äëÿ êîíòðîëþ ôîòîøàáëîí³â surface-mount ~ ïðèëàä (îïòè÷íîãî) êîíòðîëþ êîìïîíåíò³â ïîâåðõíåâîãî ìîíòàæó (íàïð. ï³ñëÿ íàëàäêè) instability íåñòàá³ëüí³ñòü; íåñò³éê³ñòü installation 1. óñòàòêóâàííÿ; àïàðàòóðà 2. ðîçì³ùåííÿ; óñòàíîâêà, ìîíòàæ air-conditioning ~ óñòàòêóâàííÿ äëÿ êîíäèö³îíóâàííÿ ïîâ³òðÿ instrumentation êîíòðîëüíî-âèì³ðþâàëüíà àïàðàòóðà insulant (åëåêòðî)³çîëÿö³éíèé ìàòåð³àë insulation 1. ³çîëÿö³ÿ 2. (åëåêòðî)³çîëÿö³éíèé ìàòåð³àë air ~ ïîâ³òðÿíà ³çîëÿö³ÿ field ~ ³çîëÿö³ÿ çàõèñíèì øàðîì îêñèäó oxide ~ îêñèäíà ³çîëÿö³ÿ polyimide ~ ïîë³³ì³äíà ³çîëÿö³ÿ (áàãàòîð³âíåâèõ ç’ºäíàíü â ²Ñ) insulator 1. ä³åëåêòðèê 2. ³çîëþþ÷èé øàð 3. (åëåêòðî) ³çîëÿö³éíèé ìàòåð³àë field (îõide) ~ çàõèñíèé øàð îêñèäó gate ~ ä³åëåêòðèê ï³äçàòâîðà interlevel ~ ì³æð³âíåâèé ³çîëþþ÷èé øàð (íàïð. â áàãàòîøàðîâ³é äðóêîâàí³é ïëàò³) multilevel ~ ³çîëþþ÷èé øàð äëÿ áàãàòîð³âíåâèõ ç’ºäíàíü SiO2 ~ ³çîëþþ÷èé øàð ç ä³îêñèäó êðåìí³þ integration 1. ³íòåãðàö³ÿ; ñòóï³íü ³íòåãðàö³¿ 2. ³íòåãðàëüíà ñõåìà, ²Ñ (äèâ. ò-æ chip, circuit) circuit ~ ³íòåãðàö³ÿ íà ð³âí³ ñõåì, ñõåìíà ³íòåãðàö³ÿ component ~ ³íòåãðàö³ÿ êîìïîíåíò³â compound (monolithic) ~ áàãàòîêðèñòàëüíà ²Ñ custom (-designed) ~ çàìîâëåíà ²Ñ dedicated(-designed)~ ñïåö³àë³çîâàíà ²Ñ discretionary ~ ²Ñ ç âèáîð÷èìè ì³æç’ºäíàííÿìè down-scaled ~ ìàñøòàáîâàíà ²Ñ extra large-scale ~ 1. ñòóï³íü ³íòåãðàö³¿ âèùå íàäâèñîêîãî 2. ²Ñ ³ç ñòóïåíåì ³íòåãðàö³¿ âèùå íàäâèñîêîãî, óëüòðàâåëèêà ²Ñ, ÓÂ²Ñ full-slice ~ 1. ³íòåãðàö³ÿ íà ö³ë³é íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ 2. ²Ñ íà ö³ë³é íàï³âïðîâ³äíèêîâ³é ïëàñòèí³
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int GaAs monolithic ~ ìîíîë³òíà ²Ñ íà àðñåí³ä³ optimum-scale ~ 1. îïòèìàëüíèé ñòóï³íü ãàë³þ ³íòåãðàö³¿ 2. ²Ñ ç îïòèìàëüíèì ñòóïåíåì gate-array ~ (öèôðîâà) ²Ñ íà îñíîâ³ ³íòåãðàö³¿ áàçîâîãî ìàòðè÷íîãî êðèñòàëà performance option ~ ñòóï³íü ³íòåãðàö³¿, gigascale ~ 1. ñòóï³íü ³íòåãðàö³¿ 10 9 â³äïîâ³äíèé êîíêðåòí³é îáëàñò³ âæèâàííÿ; åëåìåíò³â ³ âèùå 2. ²Ñ ³ç ñòóïåíåì ³íòåãðàö³¿ îïòèìàëüíèé ñòóï³íü ³íòåãðàö³¿ äëÿ äàíî¿ 9 10 åëåìåíò³â ³ âèùå îáëàñò³ çàñòîñóâàííÿ grand-scale [high-scale] 1. âèñîêèé ñòóï³íü programmed-interconnection wafer-scale ~ ³íòåãðàö³¿ 2. ²Ñ ç âèñîêèì ñòóïåíåì Â²Ñ íà ö³ë³é íàï³âïðîâ³äíèêîâ³é ïëàñòèí³, ³íòåãðàö³¿, âåëèêà ²Ñ, Â²Ñ âèãîòîâëåíà ìåòîäîì ïðîãðàìîâàíîãî high-volume ~ âåëèêîñåð³éíà ²Ñ ç’ºäíàííÿ ãîäíèõ êðèñòàë³â horizontal ~ 1. ãîðèçîíòàëüíà ³íòåãðàö³ÿ proprietary ~ ²Ñ âëàñíî¿ ðîçðîáêè (ðîçøèðåííÿ íîìåíêëàòóðè ïðîäóêö³¿, ùî right-scale ~ 1. îïòèìàëüíèé ñòóï³íü ³íòåãðàö³¿ 2. ô³ðì. Â²Ñ ç á³ïîëÿðíèìè ³ âèïóñêàºòüñÿ) 2. âèãîòîâëåííÿ ó âèãëÿä³ ÌÎÍ ²Ñ (íà â³äì³íó â³ä ÌÎË ²Ñ ç VÌÎÍ-òðàíçèñòîðàìè íà îäíîìó êðèñòàë³ ïîä³áíèìè êàíàâêàìè) semicustom ~ íàï³âçàìîâëåíà ²Ñ hybrid ~ ã³áðèäíà ²Ñ, Ã²Ñ silicon-on-sapphire ~ ²Ñ íà ñòðóêòóð³ òèïó large-scale ~ 1. âèñîêèé ñòóï³íü ³íòåãðàö³¿ «êðåìí³é íà ñàïô³ð³», ²Ñ íà ÊÍÑ-ñòðóêòóð³ 2. ²Ñ ç âèñîêèì ñòóïåíåì ³íòåãðàö³¿, âåëèêà small-scale ~ 1. ìàëèé ñòóï³íü ³íòåãðàö³¿ 2. ²Ñ, Â²Ñ ²Ñ ç ìàëèì ñòóïåíåì ³íòåãðàö³¿ standard (-product) ~ ñòàíäàðòíà ²Ñ large-scale hybrid ~ âåëèêà ã³áðèäíà ²Ñ, ÂÃ²Ñ standard-scale ~ 1. ñòàíäàðòíèé ñòóï³íü ³íòåãðàö³¿ 2. ²Ñ ³ç ñòàíäàðòíèì ñòóïåíåì low-volume ~ äð³áíîñåð³éíà ²Ñ ³íòåãðàö³¿ mask-programmable ~ ²Ñ, ïðîãðàìîâàíà øàáëîíàìè super large-scale ~ 1. ñòóï³íü ³íòåãðàö³¿ master-slice ~ ²Ñ íà îñíîâ³ áàçîâîãî âèùå íàäâèñîêîãî 2. ²Ñ ³ç ñòóïåíåì ìàòðè÷íîãî êðèñòàëà ³íòåãðàö³¿ âèùå íàäâèñîêîãî, óëüòðàâåëèêà matrix large-scale ~ ìàòðè÷íà Â²Ñ ²Ñ, ÓÂ²Ñ medium-scale ~ 1. ñåðåäí³é ñòóï³íü system ~ ñòâîðåííÿ ì³êðîåëåêòðîííî¿ ³íòåãðàö³¿ 2. ²Ñ ç ñåðåäí³ì ñòóïåíåì ñèñòåìè; ñòâîðåííÿ ñèñòåìè íà ²Ñ ³íòåãðàö³¿, ñåðåäíÿ ²Ñ, Ñ²Ñ ultra high-speed ~ óëüòðàøâèäêîä³þ÷à ²Ñ 6 megascale ~ 1. ñòóï³íü ³íòåãðàö³¿ 10 ultralarge-scale ~ 1. ñòóï³íü ³íòåãðàö³¿ âèùå åëåìåíò³â ³ âèùå 2. ²Ñ ³ç ñòóïåíåì ³íòåãðàö³¿ íàäâèñîêîãî 2. ²Ñ ³ç ñòóïåíåì ³íòåãðàö³¿ 6 10 åëåìåíò³â ³ âèùå âèùå íàäâèñîêîãî, óëüòðàâåëèêà ²Ñ, ÓÂ²Ñ microbipolar large-scale ~ ì³êðîïîòóæíà vertical ~ 1. âåðòèêàëüíà ³íòåãðàö³ÿ (ïåðåõ³ä á³ïîëÿðíà Â²Ñ ô³ðìà-âèãîòîâëþâà÷³â àïàðàòóðè äî microcomputer ~ 1. ñòâîðåííÿ ³íòåãðàëüíèõ âèðîáíèöòâà ²Ñ) 2. âèãîòîâëåííÿ ó âèãëÿä³ ì³êðîÅÎÌ 2. ²Ñ ì³êðîÅÎÌ ÌÎÍ ²Ñ ç V-ïîä³áíèìè êàíàâêàìè, micropower ~ ²Ñ ç íèçüêîþ ñïîæèâàíîþ âèãîòîâëåííÿ ó âèãëÿä³ VÌÎÍ ²Ñ ïîòóæí³ñòþ, ì³êðîïîòóæíà ²Ñ very high-speed ~ íàäøâèäêîä³þ÷à microprocessor ~ 1. ñòâîðåííÿ [íàäøâèäê³ñíà] ²Ñ, ÍØ²Ñ ì³êðîïðîöåñîð³â 2. Â²Ñ ì³êðîïðîöåñîðà, very large-scale ~ 1. íàäâåëèêèé ñòóï³íü ì³êðîïðîöåñîðíà Â²Ñ ³íòåãðàö³¿ 2. íàäâåëèêà ²Ñ, ÍÂ²Ñ monolithic ~ 1. ³íòåãðàö³ÿ ó âèãëÿä³ wafer-scale ~ 1. ³íòåãðàö³ÿ íà ö³ë³é ìîíîë³òíî¿ ñòðóêòóðè 2. ìîíîë³òíà ²Ñ íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ 2. ²Ñ íà ö³ë³é multilevel ~ ²Ñ ç áàãàòîð³âíåâîþ íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ ìåòàë³çàö³ºþ; áàãàòîð³âíåâà ²Ñ 3-D ~ òðèâèì³ðíà ³íòåãðàö³ÿ optical ~ îïòè÷íà ²Ñ; îïòîåëåêòðîííà ²Ñ integrity: bond ~ ö³ë³ñí³ñòü ç’ºäíàííÿ (íàïð. êðèñòàëà ç ï³äêëàäêîþ)
101
int chip ~ ö³ë³ñí³ñòü êðèñòàëà gate-îõide ~ ö³ë³ñí³ñòü îêñèäíîãî øàðó çàòâîðà photoresist ~ ñò³éê³ñòü ôîòîðåçèñòà vacuum ~ â³äñóòí³ñòü íàò³êàííÿ ó âàêóóìíèé îá’ºì intensity 1. ³íòåíñèâí³ñòü 2. íàïðóæåí³ñòü (ïîëÿ) electric-field ~ íàïðóæåí³ñòü åëåêòðè÷íîãî ïîëÿ interaction: adatom-adatom ~ âçàºìîä³ÿ àäñîðáîâàíèõ àòîì³â carrier-carrier ~ âçàºìîä³ÿ ì³æ íîñ³ÿìè çàðÿäó electrostatic ~ åëåêòðîñòàòè÷íà âçàºìîä³ÿ impurity-defect ~ âçàºìîä³ÿ äîì³øêè ³ äåôåêòó laser-superconductivity target ~ âçàºìîä³ÿ ëàçåðíîãî âèïðîì³íþâàííÿ ³ íàäïðîâ³äíî¿ ì³øåí³ multivalley ~ áàãàòîäîëèííà âçàºìîä³ÿ one-way ~ îäíîñòîðîííÿ âçàºìîä³ÿ interband ì³æçîííèé intercalation òîíêå âêëþ÷åííÿ; ïðîøàðîê interchange: application data ~ çàñîáè îáì³íó äàíèìè äëÿ ïðèêëàäíèõ çàäà÷ interchangeability: device ~ âçàºìîçàì³íí³ñòü ïðèëàä³â interconnect (åëåêòðè÷íå) ì³æç’ºäíàííÿ (äèâ. ò-æ interconnection) | ôîðìóâàòè (åëåêòðè÷í³) ì³æç’ºäíàííÿ; ñïîëó÷àòè interconnection (åëåêòðè÷íå) ì³æç’ºäíàííÿ; pl ðîçâîäêà (äèâ. ò-æ connection, wiring) beam-lead ~ ç’ºäíàííÿ áàëî÷íèõ âèâîä³â cell(-to-cell)~ ç’ºäíàííÿ ì³æ êîì³ðêàìè (íàïð. â Â²Ñ ÇÓ) component ~ ì³æêîìïîíåíòíå ç’ºäíàííÿ custom [customized] ~s çàìîâëåí³ ì³æç’ºäíàííÿ; çàìîâëåíà ðîçâîäêà dense wired ~s ðîçâîäêà âèñîêî¿ ãóñòèíè discretionary ~s âèá³ðêîâ³ ì³æç’ºäíàííÿ; âèá³ðêîâà ðîçâîäêà evaporated ~ íàïèëåíå (ìåòàë³çîâàíå) ì³æç’ºäíàííÿ first-level ~ ì³æç’ºäíàííÿ ïåðøîãî ð³âíÿ low-reactance ~ ì³æç’ºäíàííÿ ç íèçüêèì ðåàêòèâíèì îïîðîì metal ~ ìåòàë³çîâàíå ì³æç’ºäíàííÿ
metal silicide ~ ì³æç’ºäíàííÿ ç ñèë³öèäó multilayer [multilevel] ~s áàãàòîøàðîâà ðîçâîäêà optical ~ îïòè÷íèé çâ’ÿçîê; îïòðîííèé çâ’ÿçîê polycrystalline-silicon [polysilicon] ~ ì³æç’ºäíàííÿ ç ïîë³êðèñòàë³÷íîãî êðåìí³þ, ïîë³êðåìí³ºâå ì³æç’ºäíàííÿ programmed ~ ïðîãðàìîâàíå ç’ºäíàííÿ random ~s íåðåãóëÿðí³ ì³æç’ºäíàííÿ; íåðåãóëÿðíà ðîçâîäêà second-level ~ ì³æç’ºäíàííÿ äðóãîãî ð³âíÿ selective ~s âèá³ðêîâ³ ì³æç’ºäíàííÿ; âèáîð÷à ðîçâîäêà thick-film ~ òîâñòîïë³âêîâå ì³æç’ºäíàííÿ thin-film ~ òîíêîïë³âêîâå ì³æç’ºäíàííÿ wiring ~s ì³æç’ºäíàííÿ; ðîçâîäêà interconnectivity components ìåæçâ’ÿçí³ñòü êîìïîíåíò³â interdiffusion âçàºìíà äèôóç³ÿ dopant ~ âçàºìíà äèôóç³ÿ ëåãóþ÷î¿ äîì³øêè film-substrate ~ âçàºìíà äèôóç³ÿ ì³æ ïë³âêîþ ³ ï³äêëàäêîþ metal ~ âçàºìíà äèôóç³ÿ ìåòàë³â interdigital çóñòð³÷íî-ãðåá³í÷àñòèé; çóñòð³÷íî-øòèðüîâèé (íàïð. ïðî ãåîìåòð³þ òðàíçèñòîð³â) interdigitation 1. âèãîòîâëåííÿ ó âèãëÿä³ çóñòð³÷íî-ãðåá³í÷àñòî¿ ñòðóêòóðè 2. çóñòð³÷íî-ãðåá³í÷àñòà êîíñòðóêö³ÿ interface 1. ìåæà ðîçä³ëó; ïîâåðõíÿ ðîçä³ëó 2. ïðèñòð³é ñïîëó÷åííÿ, ³íòåðôåéñ; ïîãîäæóþ÷èé ïðèñòð³é 3. ñïîëó÷àòè; ïîãîäæóâàòè bond ~ ìåæà ðîçä³ëó âèâ³ä–êîíòàêòíèé ìàéäàí÷èê; ïðîøàðîê ì³æ âèâîäîì ³ êîíòàêòíèì ìàéäàí÷èêîì (ùî óòâîðþºòüñÿ ïðè òåðìîêîìïðåñ³¿) cassette-to-cassette ~ ïðèñòð³é äëÿ ïåðåäà÷³ íàï³âïðîâ³äíèêîâèõ ïëàñòèí ç êàñåòè â êàñåòó compound-semiconductor ~ ìåæà ðîçä³ëó ì³æ íàï³âïðîâ³äíèêîâèìè ç’ºäíàííÿìè defect-free ~ áåçäåôåêòíà ìåæà ðîçä³ëó deposit-substrate ~ ìåæà ðîçä³ëó îáëîæåíèé øàð–ï³äêëàäêà dielectric-semiconductor ~ ìåæà ðîçä³ëó ä³åëåêòðèê–íàï³âïðîâ³äíèê heterojunction ~ ìåæà ðîçä³ëó â ãåòåðîïåðåõîä³
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isl junction ~ ð-n-ïåðåõ³ä magnetic tape ~ ³íòåðôåéñ íàêîïè÷óâà÷à íà ìàãí³òí³é ñòð³÷ö³ man-machine ~ ³íòåðôåéñ ëþäèíà–ÅÎÌ network ~ ñõåìíèé ³íòåðôåéñ packet bus management ~ ³íòåðôåéñ óïðàâë³ííÿ øèíîþ ïàêåòíî¿ ïåðåäà÷³ p-n junction ~ ð–n-ïåðåõ³ä Schottky ~ ìåæà ðîçä³ëó ìåòàë– íàï³âïðîâ³äíèê, ÿêà ñòâîðþº áàð’ºð Øîòê³ semiconductor ~ ìåæà ðîçä³ëó ì³æ íàï³âïðîâ³äíèêîâèìè øàðàìè silicon-silicon dioxide ~ ìåæà ðîçä³ëó êðåìí³é–ä³îêñèä êðåìí³þ solid-liquid ~ ìåæà ðîçä³ëó òâåðäå ò³ëî– ð³äèíà standard mechanical ~ ñòàíäàðòíèé ìåõàí³÷íèé ³íòåðôåéñ, ñòàíäàðòíà ìåõàí³÷íà ñèñòåìà ïåðåäà÷³ ³ çáåð³ãàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí interference: laser-beam ~ ³íòåðôåðåíö³ÿ ëàçåðíîãî ïðîì³ííÿ interferometer: laser ~ ëàçåðíèé ³íòåðôåðîìåòð interleave ïåðåøàðîâóâàòè; ôîðìóâàòè áàãàòîøàðîâ³ ñòðóêòóðè intermixing ïåðåì³øóâàííÿ interregion ïðîì³æíà îáëàñòü intersection: track ~ ïåðåòèí òðàñ interstice ì³æâóçîë interstitial 1. ì³æâóçëîâèé àòîì, àòîì óïðîâàäæåííÿ; äåôåêò óïðîâàäæåííÿ 2. ì³æâóçëîâèé interval: controlled time ~ ðåãóëüîâàíèé ÷àñîâèé ³íòåðâàë intraband âíóòð³øíüîçîííèé intraconnection (ì³æñõåìíå) ç’ºäíàííÿ intrinsic âëàñíèé (ïðî åëåêòðîïðîâ³äí³ñòü.) invalid äåôåêòíèé; ùî âèéøîâ ç ëàäó invar ³íâàð inversely-biased îáåðíåíîçì³ùåíèé inversion ³íâåðñ³ÿ conductivity(-type)~ ³íâåðñ³ÿ òèïó ïèòîìî¿ ïðîâ³äíîñò³ field ~ ³íâåðñ³ÿ (åëåêòðè÷íîãî) ïîëÿ Fourier ~ çâîðîòíå ïåðåòâîðåííÿ Ôóðüå population ~ ³íâåðñ³ÿ çàñåëåíîñò³
inverter ³íâåðòîð digital ~ ëîã³÷íà ñõåìà ÍÅ enhancement/depletion (MOS) ~ ²Ñ ³íâåðòóâàííÿ íà ÌÎÍ-òðàíçèñòîðàõ, ùî ïðàöþþòü â ðåæèìàõ çáàãà÷åííÿ ³ çá³äíåííÿ iodide: master ñåsium ~ øàáëîí ç éîäíîãî öåç³þ (äëÿ ïðîåêö³éíî¿ åëåêòðîííî¿ ë³òîãðàô³¿) iodine éîä, I ion ³îí acceptor(-impurity)~ ³îí àêöåïòîðíî¿ äîì³øêè ad ~ àäñîðáîâàíèé ³îí donor(-impurity)~ ³îí äîíîðíî¿ äîì³øö³ dopant [doping] ~ ³îí ëåãóþ÷î¿ äîì³øêè impurity ~ äîì³øêîâèé ³îí n-type impurity ~ ³îí äîíîðíî¿ äîì³øêè parent molecular ~s ³îíè ìîëåêóë ãàçó-íîñ³ÿ p-type impurity ~ ³îí àêöåïòîðíî¿ äîì³øêè reactive ~ õ³ì³÷íî àêòèâíèé ³îí ion-beam 1. ï³ääàâàòè ³îííî-ïðîìåíåâ³é îáðîáö³ 2. ïðîâîäèòè ³îííî-ïðîìåíåâó ë³òîãðàô³þ ionization ³îí³çàö³ÿ avalanche ~ ëàâèííà ³îí³çàö³ÿ collision ~ óäàðíà ³îí³çàö³ÿ electrolytic ~ åëåêòðîë³òè÷íà ³îí³çàö³ÿ impact ~ óäàðíà ³îí³çàö³ÿ thermal ~ òåðì³÷íà ³îí³çàö³ÿ, òåðìî³îí³çàö³ÿ iron çàë³çî, Fe soldering ~ ïàÿëüíèê irradiation îïðîì³íþâàííÿ electron ~ îïðîì³íþâàííÿ åëåêòðîíàìè laser ~ îïðîì³íþâàííÿ ëàçåðîì; ëàçåðíå âèïðîì³íþâàííÿ neutron ~ îïðîì³íþâàííÿ íåéòðîíàìè X-ray ~ îïðîì³íþâàííÿ ðåíòãåí³âñüêèì ïðîì³ííÿì irregularity: edge ~ íåð³âí³ñòü êðàþ lattice ~ íåäîñêîíàë³ñòü êðèñòàë³÷íèõ ãðàòîê structure ~ íåðåãóëÿðí³ñòü ñòðóêòóðè island 1. îñòð³âåöü 2. ìàéäàí÷èê; ä³ëÿíêà bonding ~ êîíòàêòíèé ìàéäàí÷èê capped ~ îñòð³âåöü ç ïîêðèòòÿì dielectrically isolated ~ îñòð³âåöü, ³çîëüîâàíèé ä³åëåêòðèêîì epitaxial ~ îñòð³âåöü â åï³òàêñ³àëüíîìó øàð³ (íàï³âïðîâ³äíèêà)
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iso floating ~ ïëàâàþ÷èé [åëåêòðè÷íî half-sunk ~ ³çîëÿö³ÿ äð³áíèìè (ì³ëêèìè) íåçâ’ÿçàíèé] îñòð³âåöü êàíàâêàìè, çàïîâíåíèìè ä³åëåêòðèêîì mesa (-type) ~ ìåçà-îñòð³âåöü interdevice ~ ì³æåëåìåíòíà ³çîëÿö³ÿ metallic ~ ìåòàëåâèé êîíòàêòíèé ìàéäàí÷èê ion-implanted îõide ~ îêñèäíà ³çîëÿö³ÿ ç n-type ~ îñòð³âåöü (ç åëåêòðîïðîâ³äí³ñòþ) âèêîðèñòàííÿì ³çîëþþ÷èõ ³îííîn-òèïó ³ìïëàíòîâàíèõ îáëàñòåé îõide isolated ~ îñòð³âåöü ç ³çîëÿö³ºþ isoplanar ~ ³çîïëàíàðíà ³çîëÿö³ÿ îêñèäîì junction ~ ³çîëÿö³ÿ ð–n-ïåðåõîäàìè p-type ~ îñòð³âåöü (ç åëåêòðîïðîâ³äí³ñòþ) lateral ~ 1. ³çîëÿö³ÿ á³÷íèõ ñò³íîê îáëàñòåé ð-òèïó 2. á³÷íà ³çîëþþ÷à îáëàñòü SOS ~ êðåìí³ºâèé îñòð³âåöü íà ñàïô³ð³ local-îõide ~ ³çîëÿö³ÿ ëîêàëüíèì îêñèäîì isofine ô³ðì. «²çîôàéí» (íàçâà ïîçèòèâíîãî mesa ~ ³çîëÿö³ÿ ìåçàñòðóêòóð ôîòîðåçèñòà) oxide ~ ³çîëÿö³ÿ îêñèäîì, îêñèäíà ³çîëÿö³ÿ isolated ³çîëüîâàíèé passive ~ ïàñèâíà ³çîëÿö³ÿ (íàïð. îêñèäíà) dielectrically ~ ³çîëüîâàíèé ä³åëåêòðèêîì, p-i-n ~ ³çîëÿö³ÿ ð–i–n-ñòðóêòóðàìè ç ä³åëåêòðè÷íîþ ³çîëÿö³ºþ polycrystal ~ ³çîëÿö³ÿ ïîë³êðèñòàë³÷íèì oxide ~ ³çîëüîâàíèé îêñèäîì, ç îêñèäíîþ êðåìí³ºì ³çîëÿö³ºþ post fabrication ~ ³çîëÿö³ÿ ï³ñëÿ p-n junction ~ ³çîëüîâàíèé ð–n-ïåðåõîäàìè, âèãîòîâëåííÿ ³íòåãðàëüíèõ ñòðóêòóð ç ³çîëþþ÷èìè ð–n-ïåðåõîäàìè proton (bombardment) ~ ïðîòîííà ³çîëÿö³ÿ, isolation 1. ³çîëÿö³ÿ 2. ð³äê. ³çîëþþ÷à îáëàñòü ³çîëÿö³ÿ ïðîòîííèì áîìáàðäóâàííÿì air ~ ³çîëÿö³ÿ ïîâ³òðÿíèìè ïðîì³æêàìè (â recessed dielectric ~ ³çîëÿö³ÿ êàíàâêàìè, ²Ñ ç áàëî÷íèìè âèâîäàìè) çàïîâíåíèìè ä³åëåêòðèêîì air-îõide ~ îêñèäíî-ïîâ³òðÿíà ³çîëÿö³ÿ resistive ~ ðåçèñòèâíà ³çîëÿö³ÿ base-diffusion ~ ³çîëÿö³ÿ ìåòîäîì áàçîâî¿ reverse-biased (junction) ~ ³çîëÿö³ÿ äèôó糿 îáåðíåíîñóì³ùåíèìè ð–n-ïåðåõîäàìè ceramic ~ êåðàì³÷íà ³çîëÿö³ÿ, ³çîëÿö³ÿ semirecessed îõide ~ ³çîëÿö³ÿ äð³áíèìè êåðàì³êîþ êàíàâêàìè, çàïîâíåíèìè îêñèäîì collector-diffusion ~ ³çîëÿö³ÿ ìåòîäîì sidewall masked ~ îêñèäíà ³çîëÿö³ÿ ç äèôó糿 êîëåêòîðà ìàñêîâàíèìè á³÷íèìè ñò³íêàìè (êàíàâîê) deep îõide ~ ãëèáîêà ³çîëÿö³ÿ îêñèäîì source-drain ~ ³çîëÿö³ÿ ì³æ îáëàñòÿìè deep trench ~ ³çîëÿö³ÿ ãëèáîêèìè âèòîêó ³ ñòîêó êàíàâêàìè, çàïîâíåíèìè ä³åëåêòðèêîì, standard buried collector ~ ³çîëÿö³ÿ çà ãëèáîêà ù³ëèííà ³çîëÿö³ÿ áàçîâîþ òåõíîëî㳺þ ²Ñ ç ïðèõîâàíèì device ~ ³çîëÿö³ÿ åëåìåíò³â (â ²Ñ) øàðîì êîëåêòîðà dielectric ~ ³çîëÿö³ÿ ä³åëåêòðèêîì, V-groove ~ ³çîëÿö³ÿ V-ïîä³áíèìè êàíàâêàìè ä³åëåêòðè÷íà ³çîëÿö³ÿ isolator 1. ä³åëåêòðèê 2. ³çîëþþ÷èé øàð 3. diffused(-junction)~ ³çîëÿö³ÿ äèôóç³éíèìè (åëåêòðî) ³çîëÿö³éíèé ìàòåð³àë ð–n-ïåðåõîäàìè field (îõide) ~ çàõèñíèé øàð îêñèäó diode(-type)~ ³çîëÿö³ÿ ð–n-ïåðåõîäàìè gate ~ ä³åëåêòðèê ï³äçàòâîðà double-poly(silicon)~ ³çîëÿö³ÿ ïîäâ³éíèì oxide ~ 1. îêñèäíèé ³çîëþþ÷èé øàð 2. øàðîì ïîë³êðèñòàë³÷íîãî êðåìí³þ îêñèäíèé ³çîëÿö³éíèé ìàòåð³àë Isoplanar ³çîïëàíàðíà òåõíîëîã³ÿ epitaxial ~ åï³òàêñ³àëüíà ³çîëÿö³ÿ scaled ~ ³çîïëàíàðíà òåõíîëîã³ÿ ²Ñ ç etch-out and backfill ~ ³çîëÿö³ÿ âèòðàâëåíèìè êàíàâêàìè, çàïîâíåíèìè åëåìåíòàìè ïðîïîðö³éíî çìåíøåíèõ ä³åëåêòðèêîì ðîçì³ð³â fully-enclosed air ~ ïîâíà ïîâ³òðÿíà ³çîëÿö³ÿ Isoplanar S ³çîïëàíàðíà òåõíîëîã³ÿ ²Ñ ç glass ~ ³çîëÿö³ÿ ñêëîì åëåìåíòàìè ïðîïîðö³éíî çìåíøåíèõ groove ~ ³çîëÿö³ÿ (âèòðàâëåíèìè) êàíàâêàìè ðîçì³ð³â isotherm:
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jun adsorption ~ ³çîòåðìà àäñîðáö³¿ item: semiconductor ~ íàï³âïðîâ³äíèêîâèé ïðèëàä iteration: design ~s ïîâòîðíå ïðîåêòóâàííÿ
polysilicon ~ ïåðåìè÷êà ç ïîë³êðèñòàë³÷íîãî êðåìí³þ, ïîë³êðåìí³ºâà ïåðåìè÷êà junction 1. (ð–n-)ïåðåõ³ä 2. ñïàé (òåðìîïàðè) 3. ç’ºäíàííÿ; ç÷ëåíîâóâàííÿ abrupt ~ ð³çêèé ïåðåõ³ä alloy ~ ñïëàâíèé ïåðåõ³ä back-to-back ~s çóñòð³÷íî-ïàðàëåëüíî âêëþ÷åí³ ïåðåõîäè J backward biased ~ îáåðíåíîçì³ùåíèé ïåðåõ³ä jack ãí³çäî (åëåêòðè÷íîãî ç’ºäíóâà÷à) barrier ~ çàìèêàþ÷èé ïåðåõ³ä pin ~ ãí³çäî äëÿ øòèðüêîâîãî âèâîäó base-collector ~ ïåðåõ³ä êîëåêòîðà jacket îáîëîíêà; êîðïóñ base-emitter ~ åì³òåðíèé ïåðåõ³ä jar: blocking ~ çàìèêàþ÷èé ïåðåõ³ä bell ~ êîâïàê âàêóóìíî¿ íàïèëþâàëüíî¿ chip ~ ç’ºäíàííÿ êðèñòàëà (²Ñ) ç ï³äêëàäêîþ óñòàíîâêè cold ~ òåïëîïîãëèíàþ÷èé [õîëîäíèé] ñïàé jelly: collector(-base)~ ïåðåõ³ä êîëåêòîðà silicone ~ â’ÿçêà ìàñà ç êðåìí³éîðãàí³÷íî¿ degenerate ~ âèðîäæåíèé ïåðåõ³ä ñìîëè (íàïð. äëÿ ãåðìåòèçàö³¿) depleted ~ çá³äíåíèé ïåðåõ³ä jellybean æàðã. ñòàíäàðòíà ²Ñ diffused [diffusion] ~ äèôóç³éíèé ïåðåõ³ä jig: diode ~ ð–n-ïåðåõ³ä mounting ~ ñêëàäàëüíî-ìîíòàæíå doped ~ ëåãîâàíèé ïåðåõ³ä ïðèñòîñóâàííÿ drain-channel ~ ïåðåõ³ä ñò³ê–êàíàë precision polishing ~ ïðèñòîñóâàííÿ äëÿ drain-substrate ~ ïåðåõ³ä ñò³ê–ï³äêëàäêà ïðåöèç³éíî¿ ïîë³ðîâêè electrical ~ åëåêòðè÷íå ç’ºäíàííÿ joining: emitter(-base) ~ åì³òåðíèé ïåðåõ³ä crimp ~ ç’ºäíàííÿ îáòèñêîì epitaxial [epitaxially grown] ~ joint ç’ºäíàííÿ; ç÷ëåíóâàííÿ (äèâ. ò-æ bond, åï³òàêñ³àëüíèé ïåðåõ³ä connection) | ñïîëó÷àòè; ç÷ëåíîâóâàòè Esaki ~ òóíåëüíèé ïåðåõ³ä abutment ~ ç’ºäíàííÿ âñòèê floating ~ ïëàâàþ÷èé ïåðåõ³ä airtight ~ ãåðìåòè÷íå ç’ºäíàííÿ forward-biased ~ ïðÿìîçì³ùåíèé ïåðåõ³ä bellows ~ ñèëüôîííå ç’ºäíàííÿ (íàïð. ó fused ~ ñïëàâíèé ïåðåõ³ä âàêóóìíèõ óñòàíîâêàõ) graded ~ ïëàâíèé ïåðåõ³ä grown (semiconbutt ~ ç’ºäíàííÿ âñòèê ductor) ~ âèðîùåíèé ïåðåõ³ä cold solder ~ (äåôåêòíå) ïàÿíå ç’ºäíàííÿ heteroface [heterogeneous] ~ ãåòåðîïåðåõ³ä ïðè õîëîäíîìó ïàÿíí³ high-low ~ 1. ð+–ð-ïåðåõîä 2. n+–n-ïåðåõ³ä crimp ~ ç’ºäíàííÿ îáòèñêîì homogeneous ~ ãîìîïåðåõ³ä dry ~ ñóõå ç’ºäíàííÿ; íåïðîïàÿíå ç’ºäíàííÿ hot ~ òåïëîâèä³ëÿþ÷èé [ãàðÿ÷èé] ñïàé solderless ~ áåçñïàéíå [íåïàÿíå] ç’ºäíàííÿ hyperabrupt ~ íàäð³çêèé [ã³ïåðð³çêèé] welded ~ çâàðíå ç’ºäíàííÿ ïåðåõ³ä wire-wrapped ~ ç’ºäíàííÿ íàêðóòêîþ injector ~ ³íæåêòóþ÷èé ïåðåõ³ä, ïåðåõ³ä, ùî Josephson ïðèëàä íà åôåêò³ Äæîçåôñîíà; ³íæåêòóº íîñ³¿ çàðÿäó ïðèëàä íà ïåðåõîä³ Äæîçåôñîíà intrinsic-extrinsic ~ ïåðåõ³ä íàï³âïðîâ³äíèê jump: ç âëàñíîþ åëåêòðîïðîâ³äí³ñòþ– temperature ~ ñòðèáîê òåìïåðàòóðè; íàï³âïðîâ³äíèê ç äîì³øêîâîþ ïåðåãð³â; ëîêàëüíå ðîç³ãð³âàííÿ åëåêòðîïðîâ³äí³ñòþ jumper ïåðåìè÷êà; (íàâ³ñíèé) äðîòÿíèé âèâ³ä ion-implanted ~ ³îííî-³ìïëàíòîâàíèé | âèãîòîâëÿòè ïåðåìè÷êè; âèãîòîâëÿòè ïåðåõ³ä íàâ³ñí³ äðîòÿí³ âèâîäè isolation ~ ³çîëþþ÷èé ïåðåõ³ä guard-ring ~ ïåðåìè÷êà íàä îõîðîííèì ê³ëüöåì
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kli Josephson ~ ïåðåõ³ä Äæîçåôñîíà, äæîçåôñîí³âñüêèé ïåðåõ³ä long-lifetime ~ ïåðåõ³ä ç íîñ³ÿìè, ùî ìàþòü âåëèêèé ÷àñ æèòòÿ low-high ~ 1. ð–ð+-ïåðåõ³ä 2. n–n+-ïåðåõ³ä low-lifetime ~ ïåðåõ³ä ç íîñ³ÿìè, ùî ìàþòü ìàëèé ÷àñ æèòòÿ metallurgical ~ ìåòàëóðã³éíèé ïåðåõ³ä (íàïð. ì³æ çîëîòîì ³ àëþì³í³ºì) metal–semiconductor ~ ïåðåõ³ä ìåòàë– íàï³âïðîâ³äíèê; áàð’ºð Øîòê³ nonreclifying ~ íåâèïðÿìëÿþ÷èé [îì³÷íèé] ïåðåõ³ä n–p ~ n–ð-ïåðåõ³ä ohmic ~ îì³÷íèé [íåâèïðÿìëÿþ÷èé] ïåðåõ³ä photoresistive ~ ôîòî÷óòëèâèé [ñâ³òëî÷óòëèâèé] ïåðåõ³ä photovoltaic ~ ïåðåõ³ä ç ôîòîãàëüâàí³÷íèì åôåêòîì pin ~ p–i–n-ïåðåõ³ä planar ~ ïëàíàðíèé ïåðåõ³ä point-contact ~ òî÷êîâèé ð–n-ïåðåõ³ä point-contact Josephson ~ ïåðåõ³ä Äæîçåôñîíà ç òî÷êîâèìè êîíòàêòàìè recessed ~ ïåðåõ³ä, ñôîðìîâàíèé â êàíàâö³ recrystallized ~ ðåêðèñòàë³çîâàíèé ïåðåõ³ä rectifying ~ âèïðÿìëÿþ÷èé ïåðåõ³ä remelt ~ ðåêðèñòàë³çîâàíèé ïåðåõ³ä reverse-biased ~ îáåðíåíîçì³ùåíèé ïåðåõ³ä Schottky barrier ~ áàð’ºð Øîòê³ sealed ~ ãåðìåòèçîâàíèé ïåðåõ³ä semiconductor-barrier Josephson ~ ïåðåõ³ä Äæîçåôñîíà ç íàï³âïðîâ³äíèêîâèì áàð’ºðîì shallow ~ äð³áíèé ïåðåõ³ä soft ~ ïëàâíèé ïåðåõ³ä source-channel ~ ïåðåõ³ä âèò³ê–êàíàë source-substrate ~ ïåðåõ³ä âèò³ê–ï³äêëàäêà step ~ ñõ³ä÷àñòèé ïåðåõ³ä superconducting ~ íàäïðîâ³äíèé ïåðåõ³ä temperature controlled ~ ïåðåõ³ä, ï³äòðèìóâàíèé ïðè ïåâí³é òåìïåðàòóð³ thin-film Josephson ~ òîíêîïë³âêîâèé ïåðåõ³ä Äæîçåôñîíà tunnel (ing) ~ òóíåëüíèé ïåðåõ³ä unbiased ~ íåçì³ùåíèé ïåðåõ³ä vapor(-phase) grown ~ ïåðåõ³ä, âèðîùåíèé ç ïàðîâî¿ ôàçè weak-link ~s ïåðåõîäè ³ç ñëàáêèì çâ’ÿçêîì Zener breakdown ~ ïåðåõ³ä ³ç çåíåð³âñüêèì ïðîáîºì
juxtaposition ðîçì³ùåííÿ (íàïð. ôîòîøàáëîíó ³ ïëàñòèíè) â êîíòàêò³ ì³æ äåòàëÿìè step-and-repeat ~ ðîçì³ùåííÿ ïðè ïîñë³äîâíîìó êðîêîâîìó åêñïîíóâàíí³
K kerf 1. ïðîïèë (íàïð. â³ä ñêðàéáåðà) 2. ë³í³ÿ ñêðàéáóâàííÿ clean ~ ÷èñòèé ïðîïèë ç ð³âíèìè êðàÿìè deep ~ 1. ãëèáîêèé ïðîïèë 2. ãëèáîêà ë³í³ÿ ñêðàéáóâàííÿ laser ~ ëàçåðíèé ïðîïèë (íàïð. ïðè ëàçåðí³é ï³äãîíö³ ðåçèñòîð³â) sharp ~ ïðîïèë ç ð³âíèìè êðàÿìè ketone: polymethyl isopropenyl ~ ïîë³ìåòèë³çîïðîïåíèëêåòîí (ôîòîðåçèñò) key ñïðÿìîâóþ÷èé âèñòóï; êëþ÷ (íà êîðïóñ³ ²Ñ) alignment ~ çíàê [ô³ãóðà] ïîºäíàííÿ killer îòðàâëÿþ÷à äîì³øêà carrier ~ äîì³øêà, ùî çìåíøóº ÷àñ æèòòÿ íîñ³¿â çàðÿäó kiln ï³÷ äëÿ âèïàëåííÿ; ï³÷ äëÿ ñóøêè (äèâ. ò-æ furnace) tunnel ~ òóíåëüíà ï³÷ (íàïð. äëÿ âèïàëåííÿ êåðàì³÷íèõ äåòàëåé) kinetics: interstitial ~ ê³íåòèêà ì³æâóçëîâèõ àòîì³â recombination ~ ê³íåòèêà ðåêîìá³íàö³¿ íîñ³¿â çàðÿäó trapping ~ ê³íåòèêà çàõîïëåííÿ íîñ³¿â kink 1. çëàì; âèãèí (äðîòó) 2. ïåðåãèí (äèñëîêàö³¿) kit êîìïëåêò; íàá³ð breadboard ~ ìàêåòíèé êîìïëåêò bubble-memory ~ êîìïëåêò ÇÏ íà ÖÌÄ do-it-yourself ~ êîìïëåêò (íàïð. áàçîâèõ ìàòðè÷íèõ êðèñòàë³â) äëÿ âëàñíîãî âèðîáíèöòâà microcomputer ~ êîìïëåêò [íàá³ð] äëÿ ì³êðîÅÎÌ microprocessor ~ ì³êðîïðîöåñîðíèé êîìïëåêò prototype ~ äîñë³äíèé êîìïëåêò retrofit ~ êîìïëåêò çàïàñíèõ ³íñòðóìåíò³â ³ ïðèñòîñóâàíü klips [kilo logic inferences ðår second] êë³ïñ
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lan (îäèíèöÿ âèì³ðþâàííÿ ïðîäóêòèâíîñò³ ì³êðîïðîöåñîð³â, 1 êë³ïñ = 0,1–0,3 ̲Ñ) knife: artwork ~ í³æ äëÿ âèð³çóâàííÿ îðèã³íàëó ôîòîøàáëîíó kovar êîâàð
L label: wafer ~ ìàðê³ðîâêà íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ lacquer: photoresist [photoresistive] ~ ôîòîðåçèñò, ôîòîëàê radiation-sensitive ~ ëàê, ÷óòëèâèé äî âèïðîì³íþâàííÿ laminate øàðóâàòèé ïëàñòèê epoxy ~ åïîêñèäíèé øàðóâàòèé ïëàñòèê fiber-glass åðîõó ~ ñêëîåïîêñèäíèé øàðóâàòèé ïëàñòèê flat-sheet ~ ëèñòîâèé øàðóâàòèé ïëàñòèê glass-fiber ~ ñêëîòåêñòîë³ò microwave ~ øàðóâàòèé ïëàñòèê äëÿ ï³äêëàäîê ²Ñ ÍÂ×-ä³àïàçîíó polyester ~ ïîëèåô³ðíèé øàðóâàòèé ïëàñòèê land êîíòàêòíèé ìàéäàí÷èê; êîíòàêò contact ~ êîíòàêòíèé ìàéäàí÷èê presolder coated ~ êîíòàêòíèé ìàéäàí÷èê, ïîêðèòèé ïðèïîºì superconducting ~ íàäïðîâ³äíèé êîíòàêò terminal ~ êîíòàêòíèé ìàéäàí÷èê language: absolute ~ ìàøèííà ìîâà advanced Boolean expression ~ âäîñêîíàëåíà ìîâà áóëåâèõ âèðàç³â (ïðîãðàìí³ çàñîáè ðîçðîáêè ëîã³÷íèõ ñõåì) advanced continuous simulation ~ âäîñêîíàëåíà ìîâà ïðîãðàìóâàííÿ äëÿ ³ì³òàö³éíîãî ìîäåëþâàííÿ áåçïåðåðâíèõ ïðîöåñ³â application control ~ ìîâà ïðîãðàìóâàííÿ, îð³ºíòîâàíà íà ïðèêëàäí³ çàäà÷³ application data description ~ ìîâà îïèñó äàíèõ ïðèêëàäíèõ çàäà÷ asynchronous circuit design ~ ìîâà ïðîåêòóâàííÿ àñèíõðîííèõ ñõåì basic design ~ for structure ìîâà ïðîåêòóâàííÿ ñòðóêòóð ²Ñ
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behavioral description ~ ìîâà ïîâåä³íêîâîãî îïèñó behavioral modeling ~ ìîâà ôóíêö³îíàëüíîãî îïèñó Â²Ñ íà ïîâåä³íêîâîìó ð³âí³ ïðåäñòàâëåííÿ block diagram ~ ìîâà ïðîãðàìóâàííÿ, îð³ºíòîâàíà íà áëîê-ñõåìè block structured ~ áëîêîâî-ñòðóêòóðîâàíà ìîâà computer ~ ìàøèííà ìîâà computer design ~ ìîâà ïðîåêòóâàííÿ îá÷èñëþâàëüíèõ ñèñòåì computer-sensitive ~ ìàøèííî-çàëåæíà ìîâà context-sensitive matrix ~ êîíòåêñòíîçàëåæíà ìàòðè÷íà ìîâà continuous system modeling program ~ ìîâà ïðîãðàìóâàííÿ äëÿ ìîäåëþâàííÿ áåçïåðåðâíèõ ñèñòåì continuous system simulation ~ ìîâà ïðîãðàìóâàííÿ äëÿ ³ì³òàö³éíîãî ìîäåëþâàííÿ áåçïåðåðâíèõ ñèñòåì control and simulation ~ ìîâà óïðàâë³ííÿ ³ ³ì³òàö³éíîãî ìîäåëþâàííÿ data àñcess system ~ ìîâà ôîðìóëþâàííÿ çàïèò³â â ñèñòåì³ äîñòóïó äî äàíèõ declarative ~ äåêëàðàòèâíà ìîâà design ~ ìîâà ïðîåêòóâàííÿ digital (system) design ~ ìîâà ïðîåêòóâàííÿ öèôðîâèõ ñèñòåì formal layout description ~ ìîâà ôîðìàëüíîãî îïèñó òîïîëî㳿 general-purpose ~ óí³âåðñàëüíà ìîâà, ìîâà çàãàëüíîãî ïðèçíà÷åííÿ geometrical layout description ~ ìîâà îïèñó ãåîìåòðè÷íèõ ôîðì òîïîëî㳿 graphics-oriented ~ ìîâà äëÿ îáðîáêè ãðàô³÷íî¿ ³íôîðìàö³¿ (ïðè ïðîåêòóâàíí³ ²Ñ) hardware description ~ ìîâà îïèñó àïàðàòíèõ çàñîá³â hierarchical specification ~ ìîâà ³ºðàðõ³÷íî¿ ñïåöèô³êàö³¿ Â²Ñ high-level ~ ìîâà âèñîêîãî ð³âíÿ imperative ~ ³ìïåðàòèâíà ìîâà integrated-circuit design ~ ìîâà äëÿ àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ ²Ñ linear information processing ~ ìîâà ïðîãðàìóâàííÿ, îð³ºíòîâàíà íà îáðîáêó ³íôîðìàö³¿
lat linkage control ~ ìîâà óïðàâë³ííÿ ç’ºäíàííÿìè logic, timing, sequencing ~ ìîâà ïðîãðàìóâàííÿ ëîã³÷íèõ ñõåì, ùî çàáåçïå÷óþòü ñèíõðîí³çàö³þ ³ çàäàííÿ ïîñë³äîâíîñò³ îïåðàö³é low-level ~ ìîâà íóëüîâîãî ð³âíÿ machine-dependent ~ ìàøèííî-çàëåæíà ìîâà machine-independent ~ ìàøèííîíåçàëåæíà ìîâà modeling ~ 1. ìîäåëþþ÷à ìîâà 2. ìîâà îïèñó ñòðóêòóðè öèôðîâèõ ñõåì modular ~ ìîâà ìîäóëüíîãî òèïó multilevel-architecture description ~ ìîâà ïðîãðàìóâàííÿ äëÿ îïèñó ñèñòåì ç áàãàòîð³âíåâîþ àðõ³òåêòóðîþ network description ~ ìîâà îïèñó ñõåì network restructuring ~ ìîâà ðåîðãàí³çàö³¿ áàç äàíèõ ç ìåðåæíîþ ñòðóêòóðîþ nonprocedural ~ íåïðîöåäóðíà ìîâà operating-system simulation ~ ìîâà ìîäåëþâàííÿ îïåðàö³éíèõ ñèñòåì operational control ~ ìîâà ïðîãðàìóâàííÿ, îð³ºíòîâàíà íà ïðîåêòóâàííÿ êåðóþ÷èõ Â²Ñ operator-oriented ~ ìîâà, îð³ºíòîâàíà íà îïåðàòîðà overview ~ ìîâà äëÿ ôîðìóëþâàííÿ ìàòåìàòè÷íèõ çàäà÷ â ïðèðîäí³é ôîðì³ parallel context-free array ~ êîíòåêñòíîâ³ëüíà ìàòðè÷íà ìîâà äëÿ ïàðàëåëüíî¿ îáðîáêè problem-oriented ~ ïðîáëåìíî-îð³ºíòîâàíà ìîâà procedural ~ ïðîöåäóðíà ìîâà program assembly ~ ìîâà çá³ðêè ïðîãðàì rational ~ ðåãóëÿðíà ìîâà (ðîçï³çíàâàíà ê³íöåâèì àâòîìàòîì) real-time ~ ìîâà ðåàëüíîãî (ìàñøòàáó) ÷àñó register transfer level ~ ìîâà ð³âíÿ ðåã³ñòðîâèõ ïåðåäà÷ self-extending ~ ìîâà, ùî ñàìîðîçøèðþºòüñÿ structured design ~ ìîâà ñòðóêòóðíîãî ïðîåêòóâàííÿ structure description ~ ìîâà îïèñó ñòðóêòóðè Â²Ñ symbolic layout description ~ ìîâà îïèñó òîïîëî㳿
type 0 (1, 2, 3) ~ ìîâà òèïó 0 (1,2,3) (â³äïîâ³äíî äî êëàñèô³êàö³¿ ôîðìàëüíèõ ìîâ çà ³ºðàðõ³ºþ Õîìñê³) lap 1. øë³ôîâêà; ïîë³ðîâêà | øë³ôóâàòè; ïîë³ðóâàòè 2. øë³ô angle ~ êîñèé øë³ô planarizing ~ âèð³âíþþ÷à øë³ôîâêà round ~ êóëüîâèé øë³ô lapper øë³ôóâàëüíèé âåðñòàò lapping øë³ôîâêà; ïîë³ðîâêà magnetic field-assisted ~ ïîë³ðîâêà ç ìàãí³òíèì ñòèìóëþâàííÿì laser ëàçåð continuous-wave [CW] ~ ëàçåð, ùî ãåíåðóº â áåçïåðåðâíîìó ðåæèì³ DH ~ ëàçåð íà äâîõ ãåòåðîïåðåõîäàõ, äâîõãåòåðîïåðåõ³äíèé ëàçåð diode ~ íàï³âïðîâ³äíèêîâèé ëàçåð DUV excimer ~ åêñèìåðíèé ëàçåð â ãëèáîêîìó óëüòðàô³îëåò³ dye ~ ëàçåð íà ôàðáíèêàõ far-UV ~ ëàçåð, ùî ïðàöþº â äàëüí³é ÓÔîáëàñò³ injected [injection] ~ ³íæåêö³éíèé ëàçåð junction ~ íàï³âïðîâ³äíèêîâèé ëàçåð pulsed far-ultraviolet ~ ³ìïóëüñíèé ëàçåð, ùî ïðàöþº â äàëüí³é ÓÔ-îáëàñò³ semiconductor ~ íàï³âïðîâ³äíèêîâèé ëàçåð solid-state ~ òâåðäîò³ëüíèé ëàçåð TEA [transversely excited atmospheric] ~ ëàçåð àòìîñôåðíîãî òèñêó ç ïîïåðå÷íèì íàêà÷óâàííÿì ultraviolet [UV-]~ ëàçåð óëüòðàô³îëåòîâîãî [ÓÔ-]ä³àïàçîíó, óëüòðàô³îëåòîâèé ëàçåð laser-drilled ç ëàçåðíèì ôîðìóâàííÿì îòâîð³â (äðóêîâàíî¿ ïëàò³) latch 1. ô³êñàòîð, ñõåìà-êëÿìêà | ô³êñóâàòè 2. òðèãåð (ïåðåâàæíî D-òèïó) 3. ïîðóøóâàòè ñïðàöüîâóâàííÿ (ï³ä âïëèâîì ïàðàçèòíèõ åôåêò³â) level triggered ~ ñõåìà-êëÿìêà ç ïîòåíö³àëüíèì çàïóñêîì (â ÊÌÎÍ Â²Ñ) scan ~ ñõåìà-êëÿìêà ïðè ñêàíóâàíí³ shift register ~ ñõåìà ô³êñàòîðà çñóâíîãî ðåã³ñòðà status ~ ðåã³ñòð ñòàíó (â ì³êðîïðîöåñîðàõ) latchup 1. ô³êñàö³ÿ, çàùåëêèâàíèå 2. ïîðóøåííÿ ñïðàöüîâóâàííÿ (ï³ä âïëèâîì ïàðàçèòíèõ åôåêò³â)
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lay radiation induced ~ ô³êñàö³ÿ ï³ä âïëèâîì ðàä³àö³¿ (â ÊÌÎÍ-ñòðóêòóð³) latency: drive ~ çàòðèìêà äîñòóïó error ~ ïåð³îä ïðèõîâàíî¿ ïîìèëêè (÷àñ äî âèÿâëåííÿ íåñïðàâíîñòåé âáóäîâàíèìè â Â²Ñ çàñîáàìè) lattice (êðèñòàë³÷íà) ãðàòêè base-centered ~ áàçîöåíòðîâàíà ãðàòêè body-centered ~ îá’ºìíî-öåíòðîâàí³ ãðàòêè close-packed ~ ù³ëüíîóïàêîâàí³ ãðàòêè cubic ~ êóá³÷í³ ãðàòêè face-centered ~ ãðàíåöåíòðîâàí³ ãðàòêè face-centered cubic [FCC] ~ ãðàíåöåíòðîâàí³ êóá³÷í³ ãðàòêè host ~ êðèñòàë³÷í³ ãðàòêè îñíîâíî¿ ðå÷îâèíè perfect ~ ³äåàëüí³ ãðàòêè periodic ~ ðåãóëÿðí³ ãðàòêè reciprocal ~ îáåðíåíà ãðàòîêêà space ~ êðèñòàë³÷í³ ãðàòêè strained ~ íàïðóæåí³ ãðàòêè law: Arrenius ~ çàêîí Àððåí³óñà Pick’s ~ çàêîí Ô³êà Gaussian ~ çàêîí (ðîçïîä³ëè â³ðîã³äíîñò³) Ãàóñà logical ~ çàêîí òåî𳿠ëîã³êè Poisson ~ çàêîí (ðîçïîä³ëè â³ðîã³äíîñò³) Ïóàññîíà scaling ~ ïðàâèëî ìàñøòàáóâàííÿ twin ~ çàêîí äâ³éíèêóâàííÿ layer øàð; ïë³âêà | íàíîñèòè øàð acceptor ~ øàð, ëåãîâàíèé àêöåïòîðíîþ äîì³øêîþ accumulation ~ øàð, ùî çáàãàòèâ amorphized ~ àìîðô³çîâàíèé øàð anti-oxidation ~ øàð, ùî ïåðåøêîäæຠîêñèäóâàííþ (íàïð. ìàñêóþ÷èé øàð) barrier ~ 1. çàìèêàþ÷èé [áàð’ºðíèé] øàð 2. çá³äíåíèé øàð base ~ 1. áàçîâèé øàð 2. íåñó÷èé øàð blanket ~ ñóö³ëüíèé øàð blocking ~ 1. çàìèêàþ÷èé øàð 2. çá³äíåíèé øàð boundary ~ ãðàíè÷íèé [ïðèïîâåðõíåâèé] øàð branch ~ êàíàëè ï³ä ìåòàë³çàö³þ (çàáåçïå÷óþ÷³ ç’ºäíàííÿ åëåìåíò³â, áëîê³â
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³ ï³äñèñòåì íà êðèñòàë³ ³ç çîâí³øí³ìè âèâîäàìè) buffer ~ áóôåðíèé øàð buried ~ ïðèõîâàíèé øàð cap ~ âåðõí³é çàõèñíèé øàð composite ~ øàð êîìïîçèö³éíîãî ìàòåð³àëó conducting [conductor] ~ ïðîâ³äíèé øàð contact ~ êîíòàêòíèé øàð continuous ~ ñóö³ëüíèé øàð depletion ~ çá³äíåíèé øàð deposited ~ îñàäæåíèé øàð diffused [diffusion] ~ äèôóç³éíèé øàð diffusion-impervious ~ øàð, ùî ïåðåøêîäæຠäèôó糿 diffusion-source ~ øàð äèôóçàíòà doped ~ ëåãîâàíèé øàð driving ~ øàð äëÿ ñòâîðåííÿ ñõåì ïðîñóâàííÿ ÖÌÄ epi(taxial) ~ åï³òàêñ³àëüíèé øàð etch-resistant ~ øàð, ñò³éêèé äî òðàâíèêà evaporated [evaporation] ~ íàïèëåíèé øàð field oxide ~ çàõèñíèé îêñèäíèé øàð Gaussian-doped ~ (íàï³âïðîâ³äíèêîâèé) øàð ç ãàóññ³âñüêèì ðîçïîä³ëîì (ëåãóþ÷î¿) äîì³øêè heteroepitaxial ~ ãåòåðîåï³òàêñ³àëüíèé øàð high-concentration ~ ñèëüíîëåãîâàíèé øàð high-mobility ~ øàð ç âèñîêîþ ðóõëèâ³ñòþ íîñ³¿â homoepitaxial ~ ãîìîåï³òàêñ³àëüíèé øàð host ~ âèõ³äíèé øàð implantation [implanted] ~ ³îííî³ìïëàíòîâàíèé øàð impurity ~ äîì³øêîâèé øàð inert ~ õ³ì³÷íî ïàñèâíèé [³íåðòíèé] øàð injection [injector] ~ ³íæåêòóþ÷èé øàð inset oxide ~ ïîãëèáëåíèé îêñèäíèé øàð insulating [insulation, insulator] ~ ³çîëÿö³éíèé øàð interconnection ~ øàð ì³æç’ºäíàíü interface [interfacial] ~ ãðàíè÷íèé [ïðèïîâåðõíåâèé] øàð interlayer dielectric film ~ ä³åëåêòðè÷íà ïë³âêà, ùî ðîçä³ëÿº ïðîâ³äí³ øàðè intrinsic ~ øàð ç âëàñíîþ åëåêòðîïðîâ³äí³ñòþ, i-øàð inversion ~ ³íâåðñ³éíèé øàð ion-implantation ~ ³îííî-³ìïëàíòîâàíèé øàð lacquer ~ øàð ôîòîëàêà, øàð ôîòîðåçèñòà
lay lightly doped ~ ñëàáîëåãîâàíèé øàð stopping ~ ãàëüìóþ÷èé (òðàâëåíííÿ) øàð; liquid-phase epitaxial ~ åï³òàêñ³àëüíèé øàð, øàð, ùî ïåðåøêîäæຠòðàâëåííþ âèðîùåíèé ç ð³äêî¿ ôàçè substrate ~ øàð, ùî ñëóæèòü ï³äêëàäêîþ low-mobility ~ øàð ç íèçüêîþ ðóõëèâ³ñòþ superconductive ~ íàäïðîâ³äíèé øàð íîñ³¿â superimposed ~s ïîñë³äîâíî ñôîðìîâàí³ masking ~ ìàñêóþ÷èé øàð, ìàñêà øàðè (íàïð. â áàãàòîøàðîâ³é ñòðóêòóð³) metal(lization)~ øàð ìåòàë³çàö³¿ superlattice ~ øàð íàäãðàòêè metallized ~ 1. ìåòàë³çîâàíèé øàð 2. øàð supported semiconductor ~ ìåòàë³çàö³¿ íàï³âïðîâ³äíèêîâèé øàð, ñôîðìîâàíèé íà molecular epitaxy ~ øàð, âèðîùåíèé ï³äêëàäö³ ìåòîäîì ìîëåêóëÿðíî¿ åï³òàêñ³¿ thermal-îõide ~ îêñèäíèé øàð, monoatomic ~ ìîíîàòîìíèé øàð ñôîðìîâàíèé ìåòîäîì òåðì³÷íîãî monomolecular ~ ìîíîìîëåêóëÿðíèé øàð îêñèäóâàííÿ multiple ~ áàãàòîøàðîâà ïë³âêà transition ~ ïåðåõ³äíèé øàð multiple wiring ~s øàðè áàãàòîð³âíåâî¿ vacuum-deposited ~ øàð, ñôîðìîâàíèé ðîçâîäêè ìåòîäîì òåðìîâàêóóìíîãî îñàäæåííÿ n ~ øàð ç åëåêòðîííîþ åëåêòðîïðîâ³äí³ñòþ, vacuum-evaporated ~ øàð, ñôîðìîâàíèé øàð n-òèïó ìåòîäîì òåðìîâàêóóìíîãî íàïèëåííÿ native ~ âèõ³äíèé øàð via ~ øàð â íàñêð³çíèõ îòâîðàõ (äëÿ nucleating ~ çàðîäêîâèé øàð ì³æð³âíåâîãî ç’ºäíàííÿ) ohmic ~ îì³÷íèé (êîíòàêòíèé) øàð wiring ~ øàð ç’ºäíàíü organic passivation ~ ïàñèâóþ÷èé øàð ç wiring channel ~ øàð êàíàëüíîãî îðãàí³÷íî¿ ñïîëóêè òðàñóâàííÿ oxide-inhibiting ~ øàð, ïåðåøêîäæàþ÷èé ä-doping ~ äâîâèì³ðíèé ëåãîâàíèé øàð, äîêñèäóâàííþ ëåãîâàíèé øàð p ~ øàð ç ä³ðêîâîþ åëåêòðîïðîâ³äí³ñòþ, layout 1. ðîçì³ùåííÿ; ðîçòàøóâàííÿ 2. øàð ð-òèïó òîïîëîã³ÿ; òîïîëîã³÷íå êðåñëåííÿ 3. passivating [passivation] ~ ïàñèâóþ÷èé øàð ðîçðîáêà òîïîëî㳿; ïðîåêòóâàííÿ òîïîëî㳿 photosensitive ~ ôîòî÷óòëèâèé øàð 4. êðåñëåííÿ; ìàëþíîê planarizing ~ ïëàíàðèçóþ÷èé øàð, øàð äëÿ array ~ òîïîëîã³ÿ áàçîâîãî ìàòðè÷íîãî âèð³âíþâàííÿ ïîâåðõí³ êðèñòàëà; òîïîëîã³ÿ ìàòðèö³ polysilicon ~ øàð ïîë³êðèñòàë³÷íîãî artwork ~ ãðàô³÷íå çîáðàæåííÿ òîïîëî㳿, êðåìí³þ ãðàô³êà òîïîëî㳿 protective ~ çàõèñíèé øàð board ~ òîïîëîã³ÿ äðóêîâàíî¿ ïëàòè pyrolytically deposited ~ øàð, âèðîùåíèé CAD ~ òîïîëîã³ÿ, ñïðîåêòîâàíà çà ìåòîäîì ï³ðîëèçó äîïîìîãîþ ÑÀÏÐ registered ~s ñóì³ùåí³ øàðè character-based symbolic ~ òîïîëîã³ÿ ³ç resistive ~ ðåçèñòèâíèé øàð çíàêîâèì êîäóâàííÿì ñèìâîë³â sacrificial ~ òèì÷àñîâèé øàð (ùî ïîâí³ñòþ chip ~ òîïîëîã³ÿ êðèñòàëà âèäàëÿºòüñÿ íà ïîäàëüøèõ îïåðàö³ÿõ) component ~ 1. ðîçì³ùåííÿ êîìïîíåíò³â; sandwiched ~s øàðè òðèøàðîâî¿ ñòðóêòóðè ðîçòàøóâàííÿ êîìïîíåíò³â 2. ìàëþíîê seal (ing) ~ ãåðìåòèçóþ÷èé øàð êîìïîíåíòó separation ~ ðîçä³ëþþ÷èé [³çîëþþ÷èé] øàð computer-based ~ àâòîìàòèçîâàíå signal ~ ñòðóìîïðîâ³äíèé (ìåòàë³çîâàíèé) ïðîåêòóâàííÿ òîïîëî㳿 øàð äëÿ ïåðåäà÷³ ñèãíàëó custom ~ òîïîëîã³ÿ çàìîâëåíî¿ ²Ñ source ~ 1. øàð äæåðåëà ïðèì³ñè 2. designer-guided automatic ~ àâòîìàòè÷íå âèòîêîâèé øàð (ïîëüîâîãî òðàíçèñòîðà) ³íòåðàêòèâíå ïðîåêòóâàííÿ òîïîëî㳿 space-charge ~ øàð îá’ºìíîãî çàðÿäó etching pattern ~ êîíô³ãóðàö³ÿ ô³ãóðè stepped ~s ñõ³ä÷àñò³ øàðè òðàâëåííÿ
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lea fixed-grid ~ òîïîëîã³ÿ, ùî ðîçðîáëÿºòüñÿ ïî êîîðäèíàòí³é ñ³òö³ ç ô³êñîâàíèì êðîêîì functional cell ~ òîïîëîã³ÿ ôóíêö³îíàëüíèõ êîì³ðîê geometric ~ òîïîëîã³÷íå êðåñëåííÿ hand-drafted ~ 1. òîïîëîã³÷íå êðåñëåííÿ, âèêîíàíå âðó÷íó 2. ðîçðîáêà òîïîëî㳿 âðó÷íó integrated ~ çàãàëüíå òîïîëîã³÷íå êðåñëåííÿ integrated-circuit ~ òîïîëîã³ÿ ²Ñ interactive graphic ~ ³íòåðàêòèâíå ãðàô³÷íå ïðîåêòóâàííÿ òîïîëî㳿 interconnection ~ òîïîëîã³ÿ ì³æç’ºäíàíü mask ~ òîïîëîã³ÿ øàáëîíà mask-level ~ òîïîëîã³ÿ íà ð³âí³ ôîòîøàáëîíó; ôîòîøàáëîí mask pattern ~ òîïîëîã³ÿ ñòðóêòóð ôîòîøàáëîíó master-circuit ~ îðèã³íàë (ôîòîøàáëîíó) memory ~ 1. ðîçì³ùåííÿ åëåìåíò³â ïàì’ÿò³ 2. òîïîëîã³ÿ ²Ñ ïàì’ÿò³ physical ~ 1. ðîçì³ùåííÿ; ðîçòàøóâàííÿ 2. òîïîëîã³÷íå êðåñëåííÿ planar ~ ïëàíàðíà òîïîëîã³ÿ routing ~ òîïîëîã³ÿ ç’ºäíàíü; òîïîëîã³ÿ ðîçâîäêè sticks ~ ïðîåêòóâàííÿ òîïîëî㳿 çà äîïîìîãîþ ñòåêîâî¿ ä³àãðàìè symbolic [topological] ~ òîïîëîã³ÿ; òîïîëîã³÷íå êðåñëåííÿ versatile ~ óí³âåðñàëüíà òîïîëîã³ÿ wiring ~ 1. òîïîëîã³ÿ ç’ºäíàíü; òîïîëîã³ÿ ðîçâîäêè 2. ìîíòàæíà ñõåìà layouter 1. òîïîëîã 2. êîîðäèíàòîãðàô, ãðàô³÷íèé ïðèñòð³é 3. ïðîãðàìà äëÿ ïðîåêòóâàííÿ òîïîëî㳿 leaching âèëóãîâóâàííÿ solder ~ âèëóãîâóâàííÿ ïðèïîþ lead (ãíó÷êèé) âèâ³ä (êîðïóñà), åëåêòðîäíèé âèâ³ä; ïðîâ³äíèê | ïðîâîäèòè; âèâîäèòè albatross wing ~ âèâ³ä (ìàëîãàáàðèòíîãî êîðïóñó äëÿ ïîâåðõíåâîãî ìîíòàæó) ó âèãëÿä³ êðèëà àëüáàòðîñà axial ~ àêñ³àëüíèé [îñüîâèé] âèâ³ä base ~ áàçîâèé âèâ³ä beam ~ áàëêîâèé âèâ³ä bond (ing) ~ âèâ³ä, ïðèºäíàíèé ìåòîäîì òåðìîêîìïðåñ³¿
bottom-brazed ~ âèâ³ä, ïðèïàÿíèé äî íèæíüî¿ ïîâåðõí³ (íàïð. êðèñòàëîíîñ³ÿ) buried ~ ïîãëèáëåíèé âèâ³ä j-òèïó butt ~ ñòèêóâàëüíèé âèâ³ä (ìàëîãàáàðèòíîãî êîðïóñó) cantilevered ~ íàâèñàþ÷èé (íàä êðàºì êðèñòàëà) âèâ³ä collector ~ âèâ³ä êîëåêòîðà compliant ~ ãíó÷êèé âèâ³ä electroformed ~ âèâ³ä, âèãîòîâëåíèé ìåòîäîì åëåêòðîõ³ì³÷íîãî îñàäæåííÿ gold-plated ~ ïîçîëî÷åíèé âèâ³ä guide ~ ñïðÿìîâóþ÷èé âèâ³ä gull wing ~ âèâ³ä (ìàëîãàáàðèòíîãî êîðïóñó äëÿ ïîâåðõíåâîãî ìîíòàæó) ó âèãëÿä³ êðèëà ÷àéêè j- ~ âèâ³ä j-òèïó (ï³ä³ãíóòèé ï³ä äíî êîðïóñó) open j- ~ â³äêðèòèé âèâ³ä j-òèïó (÷àñòêîâî ï³ä³ãíóòèé ï³ä äíî êîðïóñó) overhanging ~ íàâèñàþ÷èé (íàä êðàºì êðèñòàëà) âèâ³ä radial ~ ðàä³àëüíèé âèâ³ä resilient ~ ãíó÷êèé âèâ³ä ribbon ~ ñòð³÷êîâèé âèâ³ä side-brazed ~ âèâ³ä, ïðèïàÿíèé äî á³÷íèõ ñò³íîê (íàïð. êðèñòàëîíîñ³ÿ) spider ~ ïàâó÷êîâèé âèâ³ä support ~ íåñó÷èé âèâ³ä tape-automated-bonded ~s âèâîäè (êðèñòàëà ²Ñ), àâòîìàòèçàö³ÿ ïðèºäíàí³ äî âèâ³äíî¿ ðàìêè íà ñòð³÷êîâîìó íîñ³¿ lead-frame âèâ³äíà ðàìêà (äëÿ ìîíòàæó êðèñòàë³â íà ñòð³÷êîâîìó íîñ³¿) DIP [dual in-line ðàñkage] ~ âèâ³äíà ðàìêà äëÿ DIP-êîðïóñà ingrown ~ âèðîùåíà âèâ³äíà ðàìêà spider ~ âèâ³äíà ðàìêà ïàâó÷êîâèìè âèâîäàìè stamped ~ øòàìïîâàíà âèâ³äíà ðàìêà lead-out âèâ³ä; ââ³ä leadthrough ïðîõ³äíèé âèâ³ä leak òåêòè; íàò³êàííÿ | âèò³êàòè; íàò³êàòè fine ~ ñëàáêå íàò³êàííÿ gross ~ ñèëüíå íàò³êàííÿ leakage 1. âèò³ê; òå÷à; íàò³êàííÿ 2. ñòðóì âòðàò (óòå÷êè) channel ~ ñòðóì âòðàò ÷åðåç êàíàë (ïîëüîâîãî òðàíçèñòîðà)
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lev direct-current ~ âòðàòè ïî ïîñò³éíîìó ñòðóìó substrate ~ ñòðóì âòðàò ÷åðåç ï³äêëàäêó surface ~ ïîâåðõíåâèé ñòðóì âòðàò leaker ïðèëàä ç íàò³êàííÿì leak-proof, leaktight ãåðìåòè÷íèé LED ñâ³òëîä³îä, ñâ³òëîâèïðîì³íþþ÷èé ä³îä, ÑÂÄ well ~ ÑÂÄ íà ñòðóêòóð³ ç ïîòåíö³àëüíîþ ÿìîþ length 1. äîâæèíà 2. òðèâàë³ñòü; òðèâàë³ñòü channel ~ äîâæèíà êàíàëó coherence ~ äîâæèíà êîãåðåíòíîñò³ collision ~ äîâæèíà ïðîá³ãó ì³æ ç³òêíåííÿìè, äîâæèíà ç³òêíåííÿ Debye ~ äîâæèíà Äåáàÿ, äåáà¿âñüêà äîâæèíà drift ~ äîâæèíà äðåéôó electron diffusion ~ äèôóç³éíà äîâæèíà åëåêòðîí³â hole diffusion ~ äèôóç³éíà äîâæèíà ä³ðîê interconnection ~ äîâæèíà ì³æç’ºäíàíü path ~ 1. äîâæèíà ïðîá³ãó 2. äîâæèíà ç’ºäíàííÿ pulse ~ òðèâàë³ñòü ³ìïóëüñó register ~ äîâæèíà ðåã³ñòðà; ÷èñëî ðîçðÿä³â â ðåã³ñòð³ lens 1. ë³íçà 2. îá’ºêòèâ camera ~ îá’ºêòèâ ôîòîêàìåðè composite ~ 1. ñêëàäîâà ë³íçà 2. ñêëàäíèé [ñêëàäîâèé] îá’ºêòèâ condensing ~ êîíäåíñîðíà ë³íçà fly’s eye (composite) ~ 1. ôàñåòî÷íà ë³íçà òèïó «îêî ìóõè» 2. ôàñåòî÷íèé îá’ºêòèâ òèïó «îêî ìóõè» multiple-image ~ 1. ôàñåòî÷íà ë³íçà 2. ôàñåòî÷íèé îá’ºêòèâ objective ~ îá’ºêòèâ ocular ~ îêóëÿð projection ~ ïðîåêö³éíà ë³íçà 1:1 magnification catadioptric ~ çá³ëüøóâàëüíà êàòàä³îïòðè÷íà ë³íçà level 1. ð³âåíü 2. ñòóï³íü (íàïð. ³íòåãðàö³¿) 3. âèð³âíþâàòè, ðîçð³âíþâàòè ~ miniaturization ñòóï³íü ì³í³àòþðèçàö³¿ acceptor energy ~ àêöåïòîðíèé åíåðãåòè÷íèé ð³âåíü algorithmic ~ àëãîðèòì³÷íèé ð³âåíü (íà ÿêîìó îñíîâíà óâàãà íàäàºòüñÿ ïîâåä³íêîâîìó îïèñó ñèñòåìè) allowed ~ äîçâîëåíèé (åíåðãåòè÷íèé) ð³âåíü
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automation ~ ñòóï³íü àâòîìàòèçàö³¿ (ïðîöåñó) behavioral ~ ïîâåä³íêîâèé ð³âåíü ïðåäñòàâëåííÿ (²Ñ) chip (complexity) ~ ñòóï³íü ³íòåãðàö³¿ êðèñòàëà circuit ~ ð³âåíü ñõåìîòåõí³êè (êîëè åëåìåíòàìè ñèñòåìè ñëóæàòü òðàíçèñòîðè, ä³îäè, ðåçèñòîðè, à îïèñ ì³ñòèòü â³äîìîñò³ ïðî ¿õ ç’ºäíàííÿ) circuit complexity ~ ñòóï³íü ³íòåãðàö³¿ ²Ñ complexity ~ ð³âåíü ñêëàäíîñò³; ñòóï³íü ³íòåãðàö³¿ concentration ~ ð³âåíü ëåãóâàííÿ confidence ~ äîâ³ð÷èé ð³âåíü damage ~ ñòóï³íü ïîøêîäæåííÿ; ñòóï³íü ðóéíóâàííÿ dc ~ ñòàòè÷íèé ð³âåíü (ñòàí ñõåìè) deep ~ ãëèáîêèé (åíåðãåòè÷íèé) ð³âåíü defect ~ ê³ëüê³ñòü [ð³âåíü] äåôåêò³â degenerate ~ âèðîäæåíèé (åíåðãåòè÷íèé) ð³âåíü discrete (energy) ~ äèñêðåòíèé (åíåðãåòè÷íèé) ð³âåíü donor energy ~ äîíîðíèé åíåðãåòè÷íèé ð³âåíü doping ~ ð³âåíü ëåãóâàííÿ dynamic ~ äèíàì³÷íèé ð³âåíü (ñòàí ñõåìè) electrical ~ åëåêòðè÷íèé ð³âåíü ïðåäñòàâëåííÿ (²Ñ) electron quasi-Fermi ~ åëåêòðîííèé êâàç³ð³âåíü Ôåðì³ empty ~ â³ëüíèé ð³âåíü filled ~ çàïîâíåíèé (åíåðãåòè÷íèé) ð³âåíü functional ~ ôóíêö³îíàëüíèé ð³âåíü functionality ~ ð³âåíü ôóíêö³îíàëüíèõ ìîæëèâîñòåé gate ~ ð³âåíü ëîã³÷íèõ åëåìåíò³â hole quasi-Fermi ~ ä³ðêîâèé êâàç³ð³âåíü Ôåðì³ impurity ~ 1. äîì³øêîâèé (åíåðãåòè÷íèé) ð³âåíü 2. ð³âåíü ëåãóâàííÿ input ~ ð³âåíü âõ³äíîãî ñèãíàëó integration ~ ñòóï³íü ³íòåãðàö³¿ (äèâ. ò-æ integration) interconnection ~ øàð [ð³âåíü] ì³æç’ºäíàíü logic ~ ëîã³÷íèé ð³âåíü logical one ~ ëîã³÷íèé ð³âåíü «1» logical zero ~ ëîã³÷íèé ð³âåíü «0» logic gate ~ ð³âåíü ëîã³÷íèõ åëåìåíò³â
lig mask ~ øàð ôîòîøàáëîíà masking ~ ìàñêóþ÷èé øàð, ìàñêà metallization ~ øàð ìåòàë³çàö³¿ noise ~ ð³âåíü øóì³â; ð³âåíü ïåðåøêîä occupied ~ çàïîâíåíèé (åíåðãåòè÷íèé) ð³âåíü register transfer ~ ð³âåíü ðåã³ñòðîâèõ ïåðåäà÷ resistivity ~ âåëè÷èíà ïèòîìîãî îïîðó saturation ~ ð³âåíü íàñè÷åííÿ shallow ~ äð³áíèé (ì³ëêèé) (åíåðãåòè÷íèé) ð³âåíü sheet-resistance ~ âåëè÷èíà ïîâåðõíåâîãî îïîðó øàðó steady-state ~ ð³âåíü ñò³éêîãî ñòàí (ñõåìè) submicron ~ ñóáì³êðîííèé ð³âåíü (òåõíîëî㳿) superficial ~ çîâí³øí³é ð³âåíü, ð³âåíü çîâí³øí³õ ä³é switch ~ âåíòèëüíèé ð³âåíü transistor switch ~ ð³âåíü òðàíçèñòîðíèõ êëþ÷³â; ð³âåíü âåíòèë³â trapping ~ ð³âåíü çàõîïëåííÿ TTL ~ (ëîã³÷íèé) ð³âåíü ÒÒË ²Ñ two-resist ~ äâîøàðîâà ôîòî-ðåçèñòèâíà ìàñêà unfilled ~ â³ëüíèé ð³âåíü unknown logic ~ íåâèçíà÷åíèé ëîã³÷íèé ð³âåíü vacant ~ â³ëüíèé ð³âåíü wafer ~ ñòóï³íü ³íòåãðàö³¿ íà ö³ë³é íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ leveler: hot-gas ~ ïðèñòð³é äëÿ âèð³âíþâàííÿ (øàðó ïðèïîþ) ñòðóìåíåì ãàðÿ÷îãî ãàçó leveling âèð³âíþâàííÿ, ðîçð³âíþâàííÿ hot-air [hot-gas] ~ âèð³âíþâàííÿ (øàðó ïðèïîþ) ñòðóìåíåì ãàðÿ÷îãî ïîâ³òðÿ large-scale integration surface ~ âèð³âíþâàííÿ ïîâåðõí³ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè ïðè âèãîòîâëåíí³ Â²Ñ zone ~ 1. çîííå âèð³âíþâàííÿ 2. ãîðèçîíòàëüíå âèòÿãàííÿ (çëèòêà ãåðìàí³þ) levelizing 1. ðàíæèðóâàííÿ (íàïð. ñõåìè) 2. ðîçáèòòÿ ñõåìè íà ð³âí³ ñïðàöüîâóâàííÿ liberation: impurity ~ âèä³ëåííÿ äîì³øêè (íàïð. ç ï³äêëàäêè ïðè íàãð³âàíí³) library: ~ layouts á³áë³îòåêà òîïîëîã³é
cell ~ á³áë³îòåêà ëîã³÷íèõ åëåìåíò³â (äëÿ àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ ²Ñ) computer-aided design ~ á³áë³îòåêà ïðîãðàì äëÿ àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ device model ~ á³áë³îòåêà ìîäåëåé êîìïîíåíò³â ²Ñ macrocell ~ á³áë³îòåêà âåëèêèõ êîì³ðîê reference ~ á³áë³îòåêà çâåðíåíü lid êðèøêà (íàïð. êîðïóñè) bull’s eye ~ êðèøêà ç êâàðöîâèì â³êîíöåì (äëÿ êîðïóñó ÇÏ) sapphire ~ ñàïô³ðîâà êðèøêà life 1. äîâãîâ³÷í³ñòü; òåðì³í ñëóæáè 2. ÷àñ æèòòÿ expected ~ ïåðåäáà÷óâàíèé òåðì³í ñëóæáè operating ~ åêñïëóàòàö³éíà äîâãîâ³÷í³ñòü rated ~ íîì³íàëüíèé òåðì³í ñëóæáè shelf [storage] ~ òåðì³í çáåð³ãàííÿ; äîâãîâ³÷í³ñòü ïðè çáåð³ãàíí³ life-span äîâãîâ³÷í³ñòü; òåðì³í ñëóæáè lifetest âèïðîáóâàííÿ íà äîâãîâ³÷í³ñòü dynamic ~ äèíàì³÷íå âèïðîáóâàííÿ íà äîâãîâ³÷í³ñòü (ï³ä íàâàíòàæåííÿì) lifetime 1. ÷àñ æèòòÿ 2. òåðì³í ñëóæáè base ~ ÷àñ æèòòÿ íîñ³¿â â áàçîâ³é îáëàñò³ bulk ~ îá’ºìíèé ÷àñ æèòòÿ carrier ~ ÷àñ æèòòÿ íîñ³¿â electron ~ ÷àñ æèòòÿ åëåêòðîí³â hole ~ ÷àñ æèòòÿ ä³ðîê mask ~ òåðì³í ñëóæáè ôîòîøàáëîíó recombination ~ ðåêîìá³íàö³éíèé ÷àñ æèòòÿ volume ~ îá’ºìíèé ÷àñ æèòòÿ lifting â³äøàðîâóâàííÿ (íàïð. øàðó ôîòîðåçèñòà); ñïó÷óâàííÿ lift-off 1. çâîðîòíà [âèáóõîâà] ë³òîãðàô³ÿ 2. â³äøàðîâóâàííÿ; â³äðèâøè bond ~ â³äøàðîâóâàííÿ òåðìîêîìïðåñ³éíîãî ç’ºäíàííÿ metal ~ çâîðîòíà [âèáóõîâà] ë³òîãðàô³ÿ äëÿ ôîðìóâàííÿ ìåòàë³çîâàíîãî øàðó photoresist ~ â³äøàðîâóâàííÿ øàðó ôîòîðåçèñòà T-gate ~ çâîðîòíà [âèáóõîâà] ë³òîãðàô³ÿ äëÿ ôîðìóâàííÿ Ò-ïîä³áíîãî çàòâîðà light: deep UV ~ äàëüíº óëüòðàô³îëåòîâå âèïðîì³íþâàííÿ erase ~ ñòèðàþ÷èé ïðîì³íü ñâ³òëà infrared ~ ³íôðà÷åðâîíå [²×]âèïðîì³íþâàííÿ
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lin ultraviolet ~ óëüòðàô³îëåòîâå [ÓÔ-] âèïðîì³íþâàííÿ write ~ çàïèñóþ÷èé ïðîì³íü ñâ³òëà light-sensitive ñâ³òëî÷óòëèâèé, ôîòî÷óòëèâèé limit ìåæà; îáìåæåííÿ | îáìåæóâàòè age ~ ãðàíè÷íèé òåðì³í ñëóæáè end-of-life ~s çíà÷åííÿ ïàðàìåòð³â äî ê³íöÿ òåðì³íó ñëóæáè ïðèëàäó fundamental ~s ô³çè÷í³ îáìåæåííÿ integration ~ ìåæà ³íòåãðàö³¿ (²Ñ) physical ~s ô³çè÷í³ îáìåæåííÿ processing [technological] ~s òåõíîëîã³÷í³ îáìåæåííÿ tolerance ~ ìåæà äîïóñêó, ãðàíè÷íèé äîïóñê limitation 1. îáìåæåííÿ (äèâ. ò-æ limit) 2. pl íåäîë³êè line 1. ë³í³ÿ 2. ñòðóìîïðîâ³äíà äîð³æêà; ç’ºäíàííÿ; øèíà; äð³ò 3. (ïîòîêîâà) òåõíîëîã³÷íà ë³í³ÿ 4. ñåð³ÿ (íàïð. ²Ñ) ~ contact ë³í³ÿ êîíòàêòó acoustic delay ~ àêóñòè÷íà ë³í³ÿ çàòðèìêè address ~ àäðåñíà øèíà assembly ~ ñêëàäàëüíà ë³í³ÿ, ë³í³ÿ çá³ðêè bake-etch-strip ~ òåõíîëîã³÷íà ë³í³ÿ òåðìîîáðîáêè, òðàâëåííÿ ³ çíÿòòÿ ôîòîðåçèñòà (ç íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) batch-fabrication ~ òåõíîëîã³÷íà ë³í³ÿ âèãîòîâëåííÿ (íàïð. ²Ñ) çà ãðóïîâîþ òåõíîëî㳺þ batch-processing ~ òåõíîëîã³÷íà ë³í³ÿ ãðóïîâî¿ îáðîáêè bit ~ ðîçðÿäíà øèíà charge-coupled device delay ~ ë³í³ÿ çàòðèìêè íà ÏÇÇ cleavage ~ ë³í³ÿ ðîçëàìóâàííÿ (íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè íà îêðåì³ êðèñòàëè) conducting [conductor] ~ ñòðóìîïðîâ³äíà äîð³æêà; ç’ºäíàííÿ coplanar ~ êîïëàíàðíà ë³í³ÿ ïåðåäà÷³ data ~ øèíà ïåðåäà÷³ äàíèõ detail ~ äåòàë³çóþ÷èé ðÿäîê (íà åêðàí³) diffused ~ äèôóç³éíà ñòðóìîïðîâ³äíà äîð³æêà; äèôóç³éíà øèíà digital delay ~ öèôðîâà ë³í³ÿ çàòðèìêè direct-written ~ äîð³æêà (íàïð. ìåòàëåâà), îäåðæàíà ïðÿìèì ìàëþâàííÿì (ç âèêîðèñòàííÿì ñòèìóëüîâàíîãî ïðîöåñó ³
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ñôîêóñîâàíîãî äæåðåëà ñòèìóëþþ÷îãî âèïðîì³íþâàííÿ) dislocation ~ ë³í³ÿ äèñëîêàö³¿ dispersive delay ~ äèñïåðñ³éíà ë³í³ÿ çàòðèìêè doped ~ ëåãîâàíà ñòðóìîïðîâ³äíà äîð³æêà ECL ~ ñåð³ÿ ÅÇË ²Ñ electroacoustic delay ~ åëåêòðîàêóñòè÷íà ë³í³ÿ çàòðèìêè fine ~ ë³í³ÿ ìàëî¿ øèðèíè gate ~ øèíà çàòâîðà Hamilton ~ ë³í³ÿ Ãàì³ëüòîíà (ñïîëó÷ຠáåç ïåðåòèíó âñ³ êîíòàêòè ²Ñ) interconnect (ion) ~ ñòðóìîïðîâ³äíà äîð³æêà; ç’ºäíàííÿ; ñïîëó÷íà øèíà laser-written metal ~ ìåòàëåâà äîð³æêà, îäåðæàíà ïðÿìèì ëàçåðíèì ìàëþâàííÿì (ëàçåðíî-ñòèìóëëüîâàíèì îñàäæåííÿì ìåòàëó) load ~ íàâàíòàæóâàëüíà ë³í³ÿ, ë³í³ÿ íàâàíòàæåííÿ magnetic delay ~ ìàãí³òíà ë³í³ÿ çàòðèìêè magnetoacoustic delay ~ ìàãí³òîàêóñòè÷íà ë³í³ÿ çàòðèìêè magnetostrictive delay ~ ìàãí³òîñòðèêö³éíà ë³í³ÿ çàòðèìêè metal ~ ìåòàëåâà ñòðóìîïðîâ³äíà äîð³æêà microstrip ~ ì³êðîñìóæêîâà ë³í³ÿ normal ~ ë³í³ÿ, ùî íå ìຠêîíñòàíòíèõ íåñïðàâíîñòåé (ïðè ãåíåðàö³¿ òåñò³â) one-track ~ îäíîêîíâåéºðíà òåõíîëîã³÷íà ë³í³ÿ production ~ òåõíîëîã³÷íà ë³í³ÿ quartz delay ~ êâàðöîâà ë³í³ÿ çàòðèìêè score [scribed] ~ ë³í³ÿ ñêðàéáóâàííÿ select ~ øèíà âèá³ðêè sense ~ øèíà ç÷èòóâàííÿ signal ~ ñèãíàëüíà øèíà slot ~ ù³ëèííà ë³í³ÿ sonic delay ~ àêóñòè÷íà ë³í³ÿ çàòðèìêè supply ~ øèíà æèâëåííÿ surface-àñoustic-wave delay ~ ë³í³ÿ çàòðèìêè íà ÏÀÕ suspended-substrate ~ ïîâ³òðÿíîä³åëåêòðè÷íà ë³í³ÿ (â Ã²Ñ ÍÂ×-ä³àïàçîíó) tapped delay ~ ë³í³ÿ çàòðèìêè ç â³äâîäàìè two-track ~ äâîõêîíâåéºðíà òåõíîëîã³÷íà ë³í³ÿ ultrasonic delay ~ óëüòðàçâóêîâà ë³í³ÿ çàòðèìêè
lit wiring ~ ñòðóìîïðîâ³äíà äîð³æêà; ç’ºäíàííÿ wiring ~ òàáëèöÿ ì³æç’ºäíàíü linear 1. ë³í³éíà ²Ñ (äèâ. ò-æ circuit) 2. lithography (ì³êðî) ë³òîãðàô³ÿ ë³í³éíèé beamwriter ~ ë³òîãðàô³ÿ ñêàíóâàííÿì AS ~ ë³í³éíà ²Ñ, ÿêà ñïåö³àë³çóºòüñÿ ïðîìåíÿ, ñêàíóþ÷à åëåêòðîííî-ïðîìåíåâà êîðèñòóâà÷åì ë³òîãðàô³ÿ LSI ~ ë³í³éíà Â²Ñ charged-particle ~ ë³òîãðàô³ÿ ç mixed-process ~ ë³í³éíà ²Ñ, âèãîòîâëåíà çà âèêîðèñòàííÿì ïó÷ê³â çàðÿäæåíèõ ÷àñòèíîê êîìá³íîâàíîþ òåõíîëî㳺þ (íàïð. åëåêòðîííà, ³îííà) line-spacing: contact ~ êîíòàêòíà ë³òîãðàô³ÿ dense ~ ìàëà â³äñòàíü [ìàëèé çàçîð] ì³æ cootactless ~ áåçêîíòàêòíà ë³òîãðàô³ÿ ñòðóìîïðîâ³äíèìè äîð³æêàìè contrast-enhanced ~ ë³òîãðàô³ÿ ç linewidth øèðèíà ë³í³¿ (åëåìåíò³â ²Ñ) ïîë³ïøåíèì êîíòðàñòîì link ïåðåìè÷êà; çâ’ÿçîê | çâ’ÿçóâàòè deep-UV ~ ôîòîë³òîãðàô³ÿ ç âèêîðèñòàííÿì fuse [fusible] ~ ïëàâêà ïåðåìè÷êà äàëüíüîãî óëüòðàô³îëåòîâîãî [ÓÔ-] intact fuse ~ íåïîðóøåíà ïëàâêà ïåðåìè÷êà âèïðîì³íþâàííÿ, ë³òîãðàô³ÿ â ãëèáîêîìó Josephson weak ~ ñëàáêà ëàíêà â ïåðåõîäàõ óëüòðàô³îëåò³ Äæîçåôñîíà direct growth ~ ë³òîãðàô³ÿ ïðÿìèì superconducting weak ~ íàäïðîâ³äíà ñëàáêà ìàëþâàííÿì øëÿõîì ëîêàëüíîãî ëàíêà ñòèìóëüîâàíîãî ðîñòó äåÿêîþ øàðó zappable ~ ïåðåïàëþâàíà ïåðåìè÷êà direct-write electron-beam ~ åëåêòðîííîlinkage 1. çâ’ÿçîê; ç’ºäíàííÿ 2. ïðîìåíåâà ë³òîãðàô³ÿ ç áåçïîñåðåäí³ì ïîãîäæóâàëüíèé ïðèñòð³é ôîðìóâàííÿì ìàëþíêà lip (íàâèñàþ÷èé) âèñòóï (ðåçèñòà íà êðàÿõ dot ~ òî÷êîâà ë³òîãðàô³ÿ, ë³òîãðàô³ÿ â³êíà) ôîðìóâàííÿ òî÷îê liquid: dual-surface ~ äâîñòîðîííÿ ë³òîãðàô³ÿ (äëÿ cholesteric ~ õîëåñòåðè÷íèé ð³äêèé êðèñòàë ôîðìóâàííÿ ìàëþíêà íà îáîõ ñòîðîíàõ cleaning ~ ðîç÷èí äëÿ î÷èùåííÿ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) crystalline ~ ð³äêèé êðèñòàë electron (-beam) ~ åëåêòðîííîïðîìåíåâà electron-hole ~ åëåêòðîííî-ä³ðêîâà [åëåêòðîííà] ë³òîãðàô³ÿ, (íàï³âïðîâ³äíèêîâà) ð³äèíà åëåêòðîíîë³òîãðàô³ÿ nematic ~ íåìàòè÷íèé ð³äêèé êðèñòàë excimer laser ~ ë³òîãðàô³ÿ ç åêñèìåðíèì process ~ òåõíîëîã³÷íèé ð³äêèé ðåàêòèâ ëàçåðîì ÿê äæåðåëî, åêñèìåðíà ëàçåðíà smectic ~ ñìåêòè÷íèé ð³äêèé êðèñòàë ë³òîãðàô³ÿ wash ~ ð³äèíà äëÿ ïðîìèâêè fine-line ~ ïðåöèç³éíà ë³òîãðàô³ÿ liquidus ë³êâ³äóñ focused ion-beam ~ ë³òîãðàô³ÿ ç list: ôîêóñîâàíèì ³îííèì ïðîìåíåì base assembly-parts ~ îñíîâíà ñïåöèô³êàö³ÿ full-wafer ~ ë³òîãðàô³ÿ ïî âñüîìó ïîëþ áëîêó (â êðåìí³ºâèõ êîìï³ëÿòîðàõ ²Ñ) ïëàñòèíè current event ~ ñïèñîê ïîòî÷íèõ ïîä³é (â bard-contact ~ ë³òîãðàô³ÿ ç ù³ëüíèì àëãîðèòìàõ ëîãèêî÷àñîâîãî ìîäåëþâàííÿ êîíòàêòîì ²Ñ) high-resolution ~ (îïòè÷íà) ë³òîãðàô³ÿ ç eligible ~ ÷åðãà çàâäàíü; ñïèñîê çàâäàíü; âèñîêèì äîçâîëîì ïð³îðèòåòíèé ñïèñîê high-voltage EB ~ âèñîêîâîëüòíà fan-in ~ ñïèñîê âõîä³â åëåêòðîííî-ïðîìåíåâà ë³òîãðàô³ÿ free ~ ñïèñîê íàÿâíèõ â íàÿâíîñò³ ðåñóðñ³â holographic ~ ëàçåðíà ë³òîãðàô³ÿ future event ~ ñïèñîê ìàéáóòí³õ ïîä³é (ïðè hybrid ~ ã³áðèäíà [êîìá³íîâàíà] ë³òîãðàô³ÿ ñêëàäàíí³ ïî䳺âèõ òàáëèöü) (íàïð, îïòè÷íà ³ åëåêòðîííî-ïðîìåíåâà net ~ òàáëèöÿ çâ’ÿçê³â (íàïð. êîì³ðîê) ë³òîãðàô³ÿ) operational check ~ ñïèñîê ôóíêö³îíàëüíèõ ïåðåâ³ðîê
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loa i-line ~ ôîòîë³òîãðàô³ÿ ç åêñïîíóâàííÿì ultraviolet ~ ë³òîãðàô³ÿ ç âèêîðèñòàííÿì âèïðîì³íþâàííÿì ç äîâæèíîþ õâèë³ 365 óëüòðàô³îëåòîâîãî [ÓÔ-] âèïðîì³íþâàííÿ íì, ôîòîë³òîãðàô³ÿ íà äîâæèí³ õâèë³ 365 íì vector-scan electron-beam ~ åëåêòðîííîion-beam ~ ³îííà [³îííî-ïðîìåíåâà] ïðîìåíåâà ë³òîãðàô³ÿ ç âåêòîðíèì ë³òîãðàô³ÿ ñêàíóâàííÿì laser(-based)~ ëàçåðíà ë³òîãðàô³ÿ wafer ~ ë³òîãðàô³ÿ ïî âñüîìó ïîëþ lift-off ~ çâîðîòíà ë³òîãðàô³ÿ ïëàñòèíè mask ~ ôîòîë³òîãðàô³ÿ äëÿ âèãîòîâëåííÿ wafer-stepper ~ ë³òîãðàô³ÿ ç ïîñë³äîâíèì ôîòîøàáëîí³â êðîêîâèì åêñïîíóâàííÿì maskless ~ áåçìàñrjdf [áåçðåçèñòîâà] write e-beam ~ ñêàíóþ÷à åëåêòðîííîë³òîãðàô³ÿ (ïðÿìèì ìàëþâàííÿì ïó÷êàìè ïðîìåíåâà ë³òîãðàô³ÿ åëåêòðîí³â) X-ray ~ ðåíòãåí³âñüêà ë³òîãðàô³ÿ micrometer [micron] ~ ë³òîãðàô³ÿ äëÿ load 1. íàâàíòàæåííÿ | íàâàíòàæóâàòè 2. ôîðìóâàííÿ åëåìåíò³â ì³êðîííèõ ðîçì³ð³â çàâàíòàæåííÿ | çàâàíòàæóâàòè molecular-level ~ ë³òîãðàô³ÿ äëÿ batch ~ çàâàíòàæåííÿ ïàðò³ÿìè, ãðóïîâå ìîëåêóëÿðíî¿ åëåêòðîí³êè (íàïð. á³î÷èï³â) çàâàíòàæåííÿ (íàïð. ïëàñòèí â êàñåòó) optical ~ ôîòîë³òîãðàô³ÿ, îïòè÷íà capacitive ~ ºìí³ñíå íàâàíòàæåííÿ ë³òîãðàô³ÿ distributed ~ ðîçïîä³ëåíå íàâàíòàæåííÿ positive-resist projection ~ ïðîåêö³éíà high-resistance ~ âèñîêîîìíå íàâàíòàæåííÿ ë³òîãðàô³ÿ ³ç çàñòîñóâàííÿì ïîçèòèâíèõ inductive ~ ³íäóêòèâíå íàâàíòàæåííÿ ðåçèñò³â lumped ~ çîñåðåäæåíå íàâàíòàæåííÿ precise registration ~ ë³òîãðàô³ÿ ç merged vertical n-p-n ~ âåðòèêàëüíèé n–ð– ïðåöèç³éíèì ñóì³ùåííÿì n-òðàíçèñòîð íàâàíòàæåííÿ ç projection ~ ïðîåêö³éíà ë³òîãðàô³ÿ ôóíêö³îíàëüíî ñóì³ùåíèìè îáëàñòÿìè proximity ~ ë³òîãðàô³ÿ ç (ì³êðî) çàçîðîì MOS (transistor) ~ ÌÎÍ-òðàíçèñòîð raster-scan electron-beam ~ åëåêòðîííîíàâàíòàæåííÿ ïðîìåíåâà ë³òîãðàô³ÿ ç ðàñòðîâèì polysilicon ~ ïîë³êðåìí³ºâèé ðåçèñòîð ñêàíóâàííÿì íàâàíòàæåííÿ resistless ~ áåçðåçèñòíà [áåçìàñêîâà] resistive ~ àêòèâíå [îì³÷íå] íàâàíòàæåííÿ ë³òîãðàô³ÿ (ïðÿìèì ìàëþâàííÿì ïó÷êàìè resistor ~ ðåçèñòîð íàâàíòàæåííÿ åëåêòðîí³â) wafer ~ ïàðò³ÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí scaled-down ~ ë³òîãðàô³ÿ äëÿ ôîðìóâàííÿ loader 1. çàâàíòàæóâàëüíèé ïðèñòð³é, ìàñøòàáîâàíèõ ³íòåãðàëüíèõ ñõåì çàâàíòàæóâà÷ 2. òðàíñïîðòåð scanning electron-beam ~ ñêàíóþ÷à belt ~ ñòð³÷êîâèé òðàíñïîðòåð åëåêòðîííî-ïðîìåíåâà ë³òîãðàô³ÿ burn-in ~ çàâàíòàæóâàëüíèé ïðèñòð³é ç scanning ion-beam ~ ñêàíóþ÷à ³îííà ïîïåðåäí³ì â³äïàëîì (ïðèëàä³â) ë³òîãðàô³ÿ cassette ~ çàâàíòàæóâàëüíèé ïðèñòð³é äëÿ self-aligned dual-surface ~ äâîñòîðîííÿ êàñåò ë³òîãðàô³ÿ ç ñàìîñóì³ùåííÿì ôîòîøàáëîí³â die-sort ~ çàâàíòàæóâàëüíèé ïðèñòð³é íà soft-contact ~ ë³òîãðàô³ÿ ç ì’ÿêèì îïåðàö³¿ êîíòðîëþ ³ êëàñèô³êàö³¿ êðèñòàë³â êîíòàêòîì SMIF ~ çàâàíòàæóâàëüíèé ïðèñòð³é äëÿ step-and-repeat [step-on-wafer, stepper] ~ ñòàíäàðòíîãî ìåõàí³÷íîãî ³íòåðôåéñó ë³òîãðàô³ÿ ç ïîñë³äîâíèì êðîêîâèì wafer ~ ïîäàþ÷èé ïðèñòð³é äëÿ åêñïîíóâàííÿì íàï³âïðîâ³äíèêîâèõ ïëàñòèí submicron ~ ë³òîãðàô³ÿ äëÿ ôîðìóâàííÿ loading 1. íàâàíòàæåííÿ 2. çàâàíòàæåííÿ; åëåìåíò³â ñóáì³êðîííèõ ðîçì³ð³â ïîäà÷à synchrotron(-radiation)~ ðåíòãåí³âñüêà dielectric ~ çàïîâíåííÿ ä³åëåêòðèêîì ë³òîãðàô³ÿ ç âèêîðèñòàííÿì reticle ~ óñòàíîâêà ïðîì³æíîãî ñèíõðîòðîííîãî âèïðîì³íþâàííÿ ôîòîøàáëîíó (íàïð. ó ôîòîïîâòîðþâà÷³)
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log wafer ~ çàâàíòàæåííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí; ïîäà÷à íàï³âïðîâ³äíèêîâèõ ïëàñòèí location 1. ðîçì³ùåííÿ; ðîçòàøóâàííÿ 2. âèçíà÷åííÿ ì³ñöåïîëîæåííÿ 3. ä³ëÿíêà; ì³ñöåïîëîæåííÿ automatic component ~ àâòîìàòè÷íà óñòàíîâêà êîìïîíåíò³â (íàïð. íà äðóêîâàí³é ïëàò³) beyond-the-node fault ~ ïîøóê íåñïðàâíîñò³ ç òî÷í³ñòþ äî ôóíêö³îíàëüíîãî âóçëà fault ~ âèÿâëåííÿ [âèÿâëåííÿ] äåôåêòó legal ~ ä³éñí³ êîîðäèíàòè (åëåìåíòó àáî êîìïîíåíòó íà êðèñòàë³) pickup ~ ïîçèö³ÿ äëÿ çàõîïëåííÿ x-y ~ êîîðäèíàòè õ-ó ðîçòàøóâàííÿ åëåìåíòà locator: fault ~ ïîêàæ÷èê ïîðóøåíü â Â²Ñ lock 1. øëþç (âàêóóìíî¿ êàìåðè) 2. áëîêóâàííÿ; çàìèêàííÿ | áëîêóâàòè; çàìèêàòè load ~ çàâàíòàæóâàëüíèé øëþç (íàïð. âàêóóìíî¿ óñòàíîâêè) vacuum ~ âàêóóìíèé øëþç; øëþç âàêóóìíî¿ óñòàíîâêè lockout áëîêóâàííÿ; çàìèêàííÿ logic 1. ëîã³êà 2. ëîã³÷í³ ñõåìè, ëîã³êà; ëîã³÷íà ñõåìà advanced custom emitter-coupled ~ âäîñêîíàëåí³ çàìîâëåí³ ëîã³÷í³ ñõåìè ç åì³òåðíèìè çâ’ÿçêàìè alternating ~ àëüòåðíàòèâíà ëîã³êà (â ÿê³é ðàçîì ³ç çàäàíîþ ôóíêö³ºþ ðåàë³çóºòüñÿ ¿¿ ñàìîïîäâ³éíà ôóíêö³ÿ) array ~ 1. ìàòðè÷íà ëîã³êà 2. ìàòðè÷íà ëîã³÷íà ñõåìà AS ~ ëîã³÷íà ²Ñ, ñïåö³àë³çîâàíà êîðèñòóâà÷åì base-coupled ~ ëîã³÷í³ ñõåìè ç áàçîâèìè çâ’ÿçêàìè basic transistor-transistor ~ áàçîâà ÒÒËñõåìà bipolar ~ ëîã³÷í³ ñõåìè íà á³ïîëÿðíèõ òðàíçèñòîðàõ, á³ïîëÿðí³ ëîã³÷í³ ñõåìè bubble ~ ëîã³÷í³ ñõåìè íà ÖÌÄ buried injector ~ ëîã³÷í³ ñõåìè ç ïðèõîâàíèì ³íæåêòîðîì
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buried-load ~ ëîã³÷í³ ñõåìè ç ïîãëèáëåíèìè ïîëüîâèìè òðàíçèñòîðàìè íàâàíòàæåíü capacitor-coupled FET ~ ëîã³÷í³ ñõåìè íà ïîëüîâîìó òðàíçèñòîð³ ³ç ºìí³ñíèìè çâ’ÿçêàìè charge buffered ~ (á³ïîëÿðí³) ëîã³÷í³ ñõåìè ç ïåðåòâîðåííÿì çàðÿä³â charge-coupled device ~ ëîã³÷í³ ñõåìè íà ÏÇÇ complementary constant-current ~ êîìïëåìåíòàðí³ ëîã³÷í³ ñõåìè íà ñòðóìîâèõ ïåðåìèêà÷àõ complementary-transistor ~ ëîã³÷í³ ñõåìè íà êîìïëåìåíòàðíèõ òðàíçèñòîðàõ control ~ 1. óïðàâëÿþ÷à ëîã³êà 2. ëîã³÷í³ ñõåìè ïðèñòðîþ óïðàâë³ííÿ controlled-saturation ~ ëîã³÷í³ ñõåìè ç êîíòðîëüîâàíèì íàñè÷åííÿì cryogenic ~ ëîã³÷í³ ñõåìè íà íàäïðîâ³äíèêîâèõ ïðèëàäàõ, íàäïðîâ³äíèêîâ³ ëîã³÷í³ ñõåìè current-hogging ~ ëîã³÷í³ ñõåìè ç ïåðåõîïëåííÿì ñòðóìó current-injection ~ ëîã³÷í³ ñõåìè ³ç ñòðóìîâîþ ³íæåêö³ºþ current-mirror ~ ëîã³÷í³ ñõåìè íà ñòðóìîâèõ äçåðêàëàõ current-mode ~ ëîã³÷í³ ñõåìè íà ïåðåìèêà÷àõ ñòðóìó, ëîã³êà íà ïåðåìèêà÷àõ ñòðóìó, ÏÑË; ÏÑË-ñõåìà current-sinking ~ ëîã³÷í³ ñõåìè ç (òèì÷àñîâèì) ïîíèæåííÿì ñòðóìó current-steering ~ ëîã³÷í³ ñõåìè ³ç ñòðóìîâèì óïðàâë³ííÿì current-switch ~ ëîã³÷í³ ñõåìè íà ïåðåìèêà÷àõ ñòðóìó, ëîã³êà íà ïåðåìèêà÷àõ ñòðóìó, ÏÑË; ÏÑË-ñõåìà dense ~ ëîã³÷í³ ñõåìè ç âèñîêîþ ãóñòèíîþ óïàêîâêè digital ~ öèôðîâà ëîã³êà diode ~ ä³îäí³ ëîã³÷í³ ñõåìè diode-transistor ~ ä³îäíî-òðàíçèñòîðí³ ëîã³÷í³ ñõåìè, ä³îäíî-òðàíçèñòîðíà ëîã³êà, ÄÒË; ÄÒË-ñõåìà diode-Zener-transistor ~ ä³îäíîòðàíçèñòîðí³ ëîã³÷í³ ñõåìè ³ç ñòàá³ë³òðîíàìè direct-coupled ~ ëîã³÷í³ ñõåìè ç áåçïîñåðåäí³ìè çâ’ÿçêàìè
log emitter-coupled ~ ëîã³÷í³ ñõåìè ç åì³òåðíèìè çâ’ÿçêàìè, ýìèòãåðíî-çâ’ÿçàíà ëîã³êà, ÅÇË; ÝÑË-ñõåìà emitter-follower ~ ëîã³÷í³ ñõåìè íà åì³òåðíèõ ïîâòîðþâà÷àõ, ëîã³êà íà åì³òåðíèõ ïîâòîðþâà÷àõ, ÅÏË; ÅÏË-ñõåìà emitter-function ~ åì³òåðíî-ôóíêö³îíàëüíà ëîã³êà, ÅÔË excitation ~ âõ³äíà êîìá³íàö³éíà ëîã³÷íà ñõåìà (ïðè çàì³í³ ïîñë³äîâí³ñíî¿ ñõåìè ìîäåëëþ Õàôôìåíà) field-programmable array ~ ìàòðè÷í³ ëîã³÷í³ ñõåìè, ïðîãðàìîâàí³ êîðèñòóâà÷åì fixed ~ ñõåìè ç ô³êñîâàíèìè ëîã³÷íèìè ôóíêö³ÿìè folded-collector integrated injection ~ ²2Ëñõåìà ç ðåêîìá³íàòîðîì êîëåêòîðà äëÿ îáìåæåííÿ íàñè÷åííÿ four-phase ~ ÷îòèðüîõôàçí³ ëîã³÷í³ ñõåìè functionalto: ~ ôóíêö³îíàëüí³ ëîã³÷í³ ñõåìè fuse-programmable array ~ ìàòðè÷í³ ëîã³÷í³ ñõåìè, ïðîãðàìîâàí³ ïëàâêèìè ïåðåìè÷êàìè gate-level ~ ͲÑ, ñïðîåêòîâàíà íà ð³âí³ ëîã³÷íèõ åëåìåíò³â glue ~ çâ’ÿçóþ÷³ [³íòåðôåéñí³] ëîã³÷í³ ñõåìè (äëÿ ñïîëó÷åííÿ ì³êðîïðîöåñîðíèõ ²Ñ ³ç çîâí³øí³ìè ïðèñòðîÿìè) gold transistor ~ ô³ðì. øâèäêîä³éí³ ëîã³÷í³ ²Ñ ç äèôó糺þ çîëîòà hard-wired ~ ëîã³êà, ðåàë³çîâàíà àïàðàòíèìè çàñîáàìè high-density ~ ëîã³÷í³ ñõåìè ç âèñîêîþ ãóñòèíîþ óïàêîâêè high-level ~ ëîã³÷í³ ñõåìè ç âèñîêèìè ëîã³÷íèìè ð³âíÿìè high-noise-immunity ~ ëîã³÷í³ ñõåìè ç âèñîêîþ ïåðåøêîäîñò³éê³ñòþ high-ðårformance [high-speed] øâèäêîä³éí³ ëîã³÷í³ ñõåìè high-threshold ~ ëîã³÷í³ ñõåìè ç âèñîêîþ ïîðîãîâîþ íàïðóãîþ hybrid diode-transistor ~ ã³áðèäíà ÄÒËñõåìà injection static induction (transistor) ~ ³íæåêö³éíî-ïîëüîâà ëîã³êà, ²ÏË; ²ÏË-ñõåìà integrated(-circuit)~ ëîã³÷í³ ²Ñ integrated injection ~ ëîã³÷í³ ñõåìè ç ³íæåêö³éíèì æèâëåííÿì, ³íòåãðàëüíà ³íæåêö³éíà ëîã³êà, ²2Ë; ²2Ë-ñõåìà
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integrated Schottky ~ ëîã³÷í³ ñõåìè ç ä³îäàìè Øîòê³, ³íòåãðàëüíà ëîã³êà Øîòê³, ²ØË; ²ØË-ñõåìà interface ~ ³íòåðôåéñí³ ëîã³÷í³ ñõåìè ion-implanted integrated injection ~ ³îííî³ìïëàíòîâàíà ²Ë2-ñõåìà isoplanar integrated injection ~ ³çîïëàíàðíà ²Ë2-ñõåìà Josephson cryogenic [Joseph-son-junction] ~ ëîã³÷í³ ñõåìè íà ïðèëàäàõ ç ïåðåõîäàìè Äæîçåôñîíà Josephson tunnel ~ ëîã³÷í³ ñõåìè íà ïðèëàäàõ ç òóíåëüíèìè ïåðåõîäàìè Äæîçåôñîíà low-energy ~ ìàëîïîòóæí³ ëîã³÷í³ ñõåìè low-level ~ ëîã³÷í³ ñõåìè ç íèçüêèìè ëîã³÷íèìè ð³âíÿìè low-speed ~ ëîã³÷í³ ñõåìè ç íèçüêîþ øâèäêî䳺þ LSI ~ ëîã³÷í³ Â²Ñ majority ~ ìàæîðèòàðíà ëîã³êà merged transistor ~ ³íòåãðàëüí³ ëîã³÷í³ ñõåìè íà òðàíçèñòîðàõ ç ñóì³ùåíèìè îáëàñòÿìè; ëîã³÷í³ ñõåìè ç ³íæåêö³éíèì æèâëåííÿì, ³íòåãðàëüíà ³íæåêö³éíà ëîã³êà, ²2Ë; ²2Ë-ñõåìà microwatt ~ ëîã³÷í³ ñõåìè ì³êðîâàò³â microwave ~ ëîã³÷í³ ñõåìè ÍÂ×-ä³àïàçîíó modified diode-transistor ~ ìîäèô³êîâàíà ÄÒË-ñõåìà modified variable-threshold ~ ìîäèô³êîâàí³ ëîã³÷í³ ñõåìè ³ç çì³ííèì ïîðîãîì (äëÿ ëîã³÷íèõ ñõåì íà ïåðåõîäàõ Äæîçåôñîíà) multilevel ~ áàãàòîð³âíåâ³ ëîã³÷í³ ñõåìè multivalued ~ áàãàòîçíà÷í³ ëîã³÷í³ ñõåìè nanosecond ~ ëîã³÷í³ ñõåìè ç íàíîñåêóíäíîþ øâèäêî䳺þ negative ~ íåãàòèâíà ëîã³êà nonisolated integrated injection ~ ²2Ë-ñõåìà áåç ³çîëÿö³¿ åëåìåíò³â nonsaturated ~ íåíàñè÷åí³ ëîã³÷í³ ñõåìè nonthreshold ~ íåïîðîãîâà ëîã³êà on-chip ~ ëîã³÷í³ ñõåìè, ñôîðìîâàí³ íà îäíîìó êðèñòàë³ ç ³íøèìè ñõåìàìè oxide-isolated integrated injection ~ ²2Ëñõåìà ç îêñèäíîþ ³çîëÿö³ºþ polysilicon integrated injection ~ ²2Ë-ñõåìà ç ³çîëÿö³ºþ åëåìåíò³â ïîë³êðèñòàë³÷íèì êðåìí³ºì positive ~ ïîçèòèâíà ëîã³êà
low programmable ~ ïðîãðàìîâàí³ ëîã³÷í³ ñõåìè programmable macro ~ ïðîãðàìîâàíà ìàêðîëîã³êà (ô³ðìîâà íàçâà ÏËÌ) quin-value ~ ï’ÿòèçíà÷íà ëîã³êà random ~ äîâ³ëüíà [íåðåãóëÿðíà] ëîã³êà register transfer ~ ëîã³êà ðåã³ñòðîâèõ ïåðåäà÷ regular ~ ðåãóëÿðíà ëîã³êà resistor-capacitor transistor ~ òðàíçèñòîðí³ ëîã³÷í³ ñõåìè ³ç ðåçèñòèâíî-ºìíîñíèìè çâ’ÿçêàìè, ðåçèñòèâíî-ºìí³ñíà òðàíçèñòîðíà ëîã³êà, ÐÅÒË resistor-coupled transistor [resistor-transistor] ~ òðàíçèñòîðí³ ëîã³÷í³ ñõåìè ç ðåçèñòèâíèìè çâ’ÿçêàìè, ðåçèñòèâíîòðàíçèñòîðíà ëîã³êà, ÐÒË; ÐÒË-ñõåìà saturated ~ íàñè÷åí³ ëîã³÷í³ ñõåìè Schottky-base integrated injection ~ ²2Ëñõåìà ç ä³îäàìè Øîòê³ â áàçîâèõ îáëàñòÿõ Schottlcy-coupled (transistor) ~ ÒÒË ç òðàíçèñòîðàìè Øîòê³, ÒØË Schottky integrated injection ~ ²2Ë-ñõåìà ç ä³îäàìè Øîòê³ Schottky-transistor ~ ëîã³÷í³ ñõåìè ç òðàíçèñòîðàìè Øîòê³ Schottky transistor-transistor ~ ÒÒË ç ä³îäàìè Øîòê³, ÒÒËØ self-refreshing ~ ëîã³÷í³ ñõåìè ñàìîðåãåíåðàö³¿ sequential ~ 1. ïîñë³äîâí³ñíà ëîã³êà 2. ïîñë³äîâí³ ëîã³÷í³ ñõåìè small-scale integration ~ ëîã³÷í³ ²Ñ ç ìàëèì ñòóïåíåì ³íòåãðàö³¿ solid-state ~ òâåðäîò³ëüí³ ëîã³÷í³ ñõåìè; íàï³âïðîâ³äíèêîâ³ ëîã³÷í³ ñõåìè substrate-fed ~ ëîã³÷í³ ñõåìè ç ï³äêëàäêîâèì ³íæåêòîðîì superconducting ~ íàäïðîâ³äíèêîâ³ ëîã³÷í³ ñõåìè symmetrically emitter-coupled ~ ëîã³÷í³ ñõåìè ç ñèìåòðè÷íèìè åì³òåðíèìè çâ’ÿçêàìè threshold ~ ïîðîãîâà ëîã³êà tightly-packed ~ ëîã³÷í³ ñõåìè ç âèñîêîþ ãóñòèíîþ óïàêîâêè transistor-coupled ~ ëîã³÷í³ ñõåìè ç òðàíçèñòîðíèìè çâ’ÿçêàìè transistor-resistor [transistor-transistor] ~ ðåçèñòîð-òðàíçèñòîðí³ ëîã³÷í³ ñõåìè,
ðåçèñòîð-òðàíçèñòîðíà ëîã³êà, ÐÒË; ÐÒËñõåìà ultra high-speed ~ øâèäêîä³éí³ ëîã³÷í³ ñõåìè user-programmable ~ ëîã³÷í³ ñõåìè, ïðîãðàìîâàí³ êîðèñòóâà÷åì variable-threshold ~ ëîã³÷í³ ñõåìè ³ç çì³ííèì ïîðîãîì vertical injection ~ ² 2 Ë-ñõåìà ç âåðòèêàëüíèìè ³íæåêòîðàìè very high-speed ~ íàäøâèäêîä³þ÷³ [íàäøâèäê³ñí³] ëîã³÷í³ ñõåìè very large-scale integration ~ ëîã³÷í³ ÍÂ²Ñ V-groove isolated injection ~ ²2Ë-ñõåìà ç ³çîëÿö³ºþ V-ïîä³áíèìè êàíàâêàìè wired ~ «ìîíòàæíà» ëîã³êà, ëîã³êà ìîíòàæíîãî îá’ºäíàííÿ àáî ðîçãàëóæåííÿ wired AND ~ ëîã³êà íà îñíîâ³ ìîíòàæíîãî ² wired OR ~ ëîã³êà íà îñíîâ³ ìîíòàæíîãî ÀÁÎ logistics ëîã³ñòèêà (ñèìâîë³÷íà ëîã³êà) longevity äîâãîâ³÷í³ñòü; òåðì³í ñëóæáè long-lifetime ç âåëèêèì ÷àñîì æèòòÿ (ïðî íîñ³¿â çàðÿäó) loop 1. ïåòëÿ; êîíòóð 2. ê³ëüöåâèé ðåã³ñòð (â ÇÏ íà ÖÌÄ) 3. öèêë dislocation ~ ïåòëÿ äèñëîêàö³¿ iteration ~ ³òåðàö³éíèé öèêë redesign ~s ïîâòîðí³ ïðîõîäæåííÿ åòàï³â ïðîåêòóâàííÿ zero-trip ~ ô³êòèâíèé öèêë loss âòðàòè ~ silicon area ïðîãðàø ó âèêîðèñòîâóâàíí³ êðåìí³ºâîãî êðèñòàëà charge ~ ðîçò³êàííÿ çàðÿäó (â ÇÏ) conversion ~ âòðàòè íà ïåðåòâîðåííÿ dielectric ~ ä³åëåêòðè÷í³ âòðàòè kerf ~ âòðàòè ïðè ð³çàíí³ (íàïð. çëèòê³â) linewidth ~ çìåíøåííÿ [â³äõ³ä] øèðèíè ë³í³¿ longitudinal-conversion transfer ~ âòðàòè ïðè ïîäîâæíüîìó ïåðåòâîðåíí³ transfer ~ âòðàòè ïðè ïåðåíåñåíí³ (íàïð. íîñ³¿â çàðÿäó) yield ~ çìåíøåííÿ â³äñîòêà âèõîäó ãîäíèõ lowering: image-force ~ çíèæåííÿ ³íòåíñèâíîñò³ çîáðàæåííÿ low-lifetime ç ìàëèì ÷àñîì æèòòÿ (ïðî íîñ³¿â çàðÿäó)
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mac low-speed ç ìàëîþ øâèäêî䳺þ low-yield ç íèçüêèì â³äñîòêîì âèõîäó ãîäíèõ LSI ²Ñ ç âèñîêèì ñòóïåíåì ³íòåãðàö³¿, âåëèêà ²Ñ, Â²Ñ (äèâ. ò-æ circuit, integration) building-block ~ ñòàíäàðòíèé áëîê Â²Ñ combined analog and digital ~ Â²Ñ ç àíàëîãîâèìè ³ öèôðîâèìè ²Ñ íà îäíîìó êðèñòàë³ custom (product) ~ çàìîâëåíà ²Ñ; ñïåö³àë³çîâàíà Â²Ñ high-density ~ Â²Ñ ç âèñîêîþ ãóñòèíîþ óïàêîâêè master-slice ~ Â²Ñ íà áàçîâîìó ìàòðè÷íîìó êðèñòàë³ lug: terminal ~s âèâ³äí³ âóøêà (ìîíòàæíî¿ óñòàíîâêè)
M machine: alignment ~ óñòàíîâêà ñóì³ùåííÿ ³ åêñïîíóâàííÿ; óñòàíîâêà ë³òîãðàô³¿ axial lead taping ~ óñòàíîâêà äëÿ âêëåéêè êîìïîíåíò³â ç àêñ³àëüíèìè âèâîäàìè â ñòð³÷êó back-end ~ ñêëàäàëüíî-ìîíòàæíà óñòàíîâêà (íàïð. äëÿ ìîíòàæó êðèñòàë³â ²Ñ) bending ~ ãèáî÷íûé âåðñòàò bonding ~ (. óñòàíîâêà òåðìîêîìïðåñ³éíî¿ çâàðêè 2. óñòàíîâêà äëÿ ìîíòàæó (íàïð. êðèñòàë³â íà êðèñòàëîíîñ³¿) byte ~ ÅÎÌ ç áàéòîâîþ îðãàí³çàö³ºþ, áàéòîâà ÅÎÌ cassette-to-cassette ~ óñòàíîâêà ç ïîäà÷åþ íàï³âïðîâ³äíèêîâèõ ïëàñòèí ç êàñåòè â êàñåòó character ~ ÅÎÌ ç ñèìâîëüíîþ îðãàí³çàö³ºþ charging ~ çàâàíòàæóâàëüíèé ïðèñòð³é, çàâàíòàæóâà÷ component taping ~ óñòàíîâêà äëÿ âêëåéêè êîìïîíåíò³â â ñòð³÷êó coordinate plotting ~ ãðàô³÷íèé ïðèñòð³é; êîîðäèíàòîãðàô data flow ~ ÅÎÌ êåðîâàíà ïîòîêîì äàíèõ, ïîòîêîâà ÅÎÌ degrutting ~ ãàëòîâî÷íà ìàøèíà (äëÿ çíÿòòÿ çàâóñåíö³â)
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deterministic (Turing) ~ äåòåðì³íîâàíà ìàøèíà Òþð³íãà EBL ~ óñòàíîâêà åëåêòðîííî¿ ë³òîãðàô³¿ finite-state ~ ê³íöåâèé àâòîìàò front-end ~ óñòàíîâêà äëÿ îáðîáêè íàï³âïðîâ³äíèêîâèõ ïëàñòèí generalized sequential ~ óçàãàëüíåíà ïîñë³äîâí³ñíà ìàøèíà (ç òåî𳿠ê³íöåâèõ àâòîìàò³â) gold dotting ~ óñòàíîâêà äëÿ íàíåñåííÿ êðàïë³ çîëîòî¿ ïàñòè (íà îñíîâó êîðïóñó) high-ðårformance ~ âèñîêîïðîäóêòèâíà ÅÎÌ insertion ~ ìîíòàæíà óñòàíîâêà (äëÿ êîìïîíåíò³â) ion-beam ~ ³îííî-ïðîìåíåâà óñòàíîâêà lapping ~ øë³ôóâàëüíèé âåðñòàò lead-forming ~ óñòàíîâêà äëÿ ôîðìóâàííÿ âèâîä³â limited register ~ ÅÎÌ ç îáìåæåíèì ÷èñëîì ðåã³ñòð³â linear sequential ~ ë³í³éíà ïîñë³äîâí³ñíà ìàøèíà loading ~ çàâàíòàæóâàëüíèé ïðèñòð³é, çàâàíòàæóâà÷ logic simulation ~ àïàðàòí³ çàñîáè ìîäåëþâàííÿ ëîã³÷íèõ ñõåì Mealy ~ ìàøèíà Ì³ë³ (ïîñë³äîâí³ñíà ìàøèíà, âèõ³äíå ñòàí ÿêî¿ çàëåæèòü â³ä ïîòî÷íîãî ³ âõ³äíîãî ñòàí³â) molding ~ óñòàíîâêà äëÿ ïðåñóâàííÿ Moor ~ ìàøèíà Ìóðà (ïîñë³äîâí³ñíà ìàøèíà, â ÿê³é âèõ³äíèé ñòàí çàëåæèòü â³ä ïîòî÷íîãî ñòàíó) MOS ~ ì³êðîÅÎÌ ç ÌÎÍ-ñòðóêòóðîþ; ì³êðîïðîöåñîð ç ÌÎÍ-ñòðóêòóðîþ multiple step-and-repeat ~ áàãàòîïîçèö³éíèé ôîòîïîâòîðþâà÷ nondeterministic sequential ~ íåäåòåðì³íîâàíà ïîñë³äîâí³ñíà ìàøèíà photocomposition ~ ôîòîíàá³ðíà ìàøèíà pick-and-place ~ ìîíòàæíà óñòàíîâêà ³ç çàõîïëþþ÷èì ïðèñòðîºì pipelined ~ ì³êðîÅÎÌ ç êîíâåéºðíîþ îáðîáêîþ äàíèõ planar ~ ïëàçìîõ³ì³÷íà óñòàíîâêà ç ïëàíàðíèì ðåàêòîðîì plasma-etch ~ óñòàíîâêà ïëàçìîâîãî òðàâëåííÿ
man plotting ~ ãðàô³÷íèé ïðèñòð³é; êîîðäèíàòîãðàô polishing ~ ïîë³ðóâàëüíèé âåðñòàò powder-coating ~ óñòàíîâêà äëÿ íàíåñåííÿ ïîêðèòò³â ìåòîäîì îïëàâëåííÿ ïîðîøêó projection ~ óñòàíîâêà ïðîåêö³éíî¿ ë³òîãðàô³¿ reference ~ îïîðíà ìîäåëü óñòàíîâêè scribing ~ óñòàíîâêà äëÿ ñêðàéáóâàííÿ sequencing ~ óñòàíîâêà äëÿ ïðîãðàìîâàíî¿ âêëåéêè êîìïîíåíò³â â ñòð³÷êó single step-and-repeat ~ îäíå-ïîçèö³éíèé ôîòîïîâòîðþâà÷ software-controlled/ ~ âåðñòàò ç ïðîãðàìíèì óïðàâë³ííÿì sorting ~ 1. ñîðòóþ÷èé ïðèñòð³é, ñîðòóâàëüíèê 2. êëàñèô³êàòîð (íàïð. íàï³âïðîâ³äíèêîâèõ ïëàñòèí) stack ~ ïðîöåñîð ³ç ñòåêîâîþ îðãàí³çàö³ºþ step-and-repeat ~ ôîòîïîâòîðþâà÷, ôîòîøòàìï stuffing ~ ìîíòàæíà óñòàíîâêà (äëÿ çá³ðêè äðóêîâàíî¿ ïëàò³) transfer (molding) ~ óñòàíîâêà ëèòòüîâîãî ïðåñóâàííÿ vector-scan electron-beam ~ óñòàíîâêà åëåêòðîíîë³òîãðàô³¿ ç âåêòîðíèì ñêàíóâàííÿì welding ~ çâàðþâàëüíèé âåðñòàò wire-routing ~ ìàøèíà òðàñóâàííÿ wire-wrap ~ ìàøèíà äëÿ ìîíòàæó ìåòîäîì íàêðóòêè x-y plotting ~ ãðàô³÷íèé ïðèñòð³é; êîîðäèíàòîãðàô machining: abrasive-jet ~ ñòðóìåíåâà àáðàçèâíà îáðîáêà chemical ~ õ³ì³÷íà îáðîáêà; õ³ì³÷íå ôðåçåðóâàííÿ; õ³ì³÷íå òðàâëåííÿ electroerosion ~ åëåêòðîåðîç³éíà îáðîáêà electron-beam ~ åëåêòðîííî-ïðîìåíåâà îáðîáêà electron-discharge ~ åëåêòðî³ñêðîâà îáðîáêà finish ~ ô³í³øíà îáðîáêà ion-beam ~ ³îííî-ïðîìåíåâà îáðîáêà laser ~ ëàçåðíà îáðîáêà photochemical ~ ôîòîõ³ì³÷íà îáðîáêà thermal ~ òåðì³÷íà îáðîáêà, òåðìîîáðîáêà macrocell ìàêðîêîì³ðêà (äëÿ ÁÌÊ)
array logic ~ ìàêðîêîì³ðêà òèïó ìàòðèö³ ëîã³÷íèõ åëåìåíò³â interface ~ ³íòåðôåéñíà ìàêðîêîì³ðêà output ~ âèõ³äíà ìàêðîêîì³ðêà macromodeling ìàêðîìîäåëþâàííÿ, ñêëàäàííÿ ìîäåëåé âåëèêèõ ñõåì macros: gate array ~ ìàêðîñòðóêòóðà âåíòèëüíî¿ ìàòðèö³ logic ~ ëîã³÷íà ìàêðîñòðóêòóðà memory ~ ìàêðîñòðóêòóðà áëîêó ïàì’ÿò³ random-control logic ~ ìàêðîñòðóêòóðà ç äîâ³ëüíîþ ëîã³êîþ óïðàâë³ííÿ magazine êàñåòà magnetics 1. ìàãí³òîåëåêòðîí³êà 2. ìàãí³òîåëåêòðîíí³ ïðèëàäè (íàïð. ÇÏ íà ÖÌÄ) magnetoconductance ìàãí³òîïðîâ³äí³ñòü magnetodielectric ìàãí³òîä³åëåêòðèê magnetodiode ìàãí³òîä³îä magnetoresistance ìàãí³òîðåçèñòèâíèé åôåêò magnetoresistor ìàãí³òîðåçèñòîð magnetostriction ìàãí³òîñòðèêö³ÿ maintainability ðåìîíòîïðèäàòí³ñòü; òåõíîëîã³÷í³ñòü maintenance òåõí³÷íå îáñëóãîâóâàííÿ ³ ðåìîíò maker: adaptive decision ~ àäàïòèâíà ïðîãðàìà óõâàëåííÿ ð³øåíü (â ³íôîðìàö³éíîïîøóêîâîìó ñåðåäîâèù³) making âèãîòîâëåííÿ; âèðîáíèöòâî malalignment íåòî÷íå ñóì³ùåííÿ; íåïðàâèëüíà îð³ºíòàö³ÿ malfunction ïîðóøåííÿ ïðàöåçäàòíîñò³; çá³é; äåôåêò manual: language reference ~ äîâ³äêîâèé ïîñ³áíèê ïî ìîâàõ ïðîãðàìóâàííÿ manufacturability òåõíîëîã³÷í³ñòü manufacture âèðîáíèöòâî; âèãîòîâëåííÿ | ïðîâîäèòè; âèãîòîâëÿòè in-house ~ âëàñíå âèðîáíèöòâî thick-film ~ âèðîáíèöòâî òîâñòîïë³âêîâèõ òÑ; âèðîáíèöòâî òîâñòîïë³âêîâèõ êîìïîíåíò³â thin-film ~ âèðîáíèöòâî òîíêîïë³âêîâèõ òÑ; âèðîáíèöòâî òîíêîïë³âêîâèõ êîìïîíåíò³â volume ~ âåëèêîñåð³éíå âèðîáíèöòâî
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mas map 1. ä³àãðàìà; êàðòà; ïëàí | ñêëàäàòè ïëàí 2. â³äîáðàæåííÿ | â³äîáðàæàòè Karnaugh ~ êàðòà Êàðíî parameter wafer ~ ä³àãðàìà ðîçïîä³ëó ïàðàìåòðà ïî ä³àìåòðó íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè wafer ~ ä³àãðàìà ðîçòàøóâàííÿ êðèñòàë³â íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³, êàðòà íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè yield ~ êàðòà â³äñîòêà âèõîäó ãîäíèõ mapping: lead ~ ïëàíóâàííÿ âèâîä³â; êîîðäèíàòíà ïðèâ’ÿçêà âèâîä³â wafer ~ ñêëàäàííÿ êàðòè ïðèäàòíîñò³ êðèñòàë³â íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ margin çàïàñ; (äîïóñòèì³) ìåæ³ gain ~ çàïàñ ïî ïîñèëåííþ noise ~ çàïàñ ïåðåøêîäîñò³éêîñò³ process ~ ³íâàð³àíòí³ñòü (òåõíîëîã³÷íîãî) ïðîöåñó safety ~ çàïàñ íàä³éíîñò³ mark ì³òêà; çíàê | â³äçíà÷àòè; ìàðê³ðóâàòè alignment ~ çíàê [ô³ãóðà] ñóì³ùåííÿ fiducial ~ çíàê [ô³ãóðà] ñóì³ùåííÿ indexing ~ ³íäåêñóþ÷èé çíàê (íàïð. íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³) locating ~ íàñòàíîâíèé çíàê; îð³ºíòóþ÷èé çíàê reference ~ ðåïåðíà ì³òêà registration ~ çíàê [ô³ãóðà] ñóì³ùåííÿ marking ìàðê³ðîâêà; ïîçíà÷åííÿ chip ~ 1. ìàðê³ðîâêà êðèñòàë³â 2. ìàðê³ðîâêà ²Ñ surface ~ ìàðê³ðîâêà íà ïîâåðõí³ mask 1. ôîòîøàáëîí; øàáëîí; (â³ëüíà) ìàñêà; òðàôàðåò 2. ìàñêà, ìàñêóþ÷èé øàð | ìàñêóâàòè additional ~ ðîáî÷èé ôîòîøàáëîí artwork ~ îäíîïîçèö³éíèé ôîòîøàáëîí (ç îäí³ºþ ñòðóêòóðîþ ²Ñ) base(-region) ~ øàáëîí äëÿ ôîðìóâàííÿ áàçîâèõ îáëàñòåé base-resistor ~ øàáëîí äëÿ ôîðìóâàííÿ áàçîâèõ ðåçèñòîð³â bimetal ~ á³ìåòàë³÷íà ìàñêà, á³ìåòàë³÷íèé òðàôàðåò blocking ~ çàõèñíà ìàñêà chrome ~ õðîìîâàíèé (ìåòàë³çîâàíèé) ôîòîøàáëîí
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collector ~ øàáëîí äëÿ ôîðìóâàííÿ îáëàñòåé êîëåêòîð³â composite ~ áàãàòîøàðîâà ìàñêà contact(-area) ~ øàáëîí äëÿ ôîðìóâàííÿ êîíòàêò³â contact-print additional ~ ðîáî÷èé øàáëîí, âèãîòîâëåíèé ìåòîäîì êîíòàêòíîãî äðóêó custom ~ çàìîâëåíèé øàáëîí deep UV ~ ôîòîøàáëîí äëÿ ôîòîë³òîãðàô³¿ ç äæåðåëîì äàëüíüîãî óëüòðàô³îëåòîâîãî âèïðîì³íþâàííÿ delineation ~ øàáëîí äëÿ ôîðìóâàííÿ ìàëþíêà deposition ~ ìàñêà äëÿ ôîðìóâàííÿ ìåòàë³çàö³¿ diffusion ~ øàáëîí äëÿ ôîðìóâàííÿ äèôóç³éíèõ îáëàñòåé doping ~ øàáëîí äëÿ ôîðìóâàííÿ ëåãîâàíèõ îáëàñòåé dry film solder ~ ìàñêà ç ñóõîãî ïë³âêîâîãî ôîòîðåçèñòà äëÿ íàíåñåííÿ ïðèïîþ E-beam ~ øàáëîí äëÿ åëåêòðîííîïðîìåíåâî¿ ë³òîãðàô³¿ E-chrome ~ øàáëîí ç øàðîì õðîìó äëÿ åëåêòðîííî-ïðîìåíåâî¿ ë³òîãðàô³¿ electron-beam generated ~ ôîòîøàáëîí, âèãîòîâëåíèé çà åëåêòðîííî-ïðîìåíåâîþ òåõíîëî㳺þ emitter ~ øàáëîí äëÿ ôîðìóâàííÿ åì³òåðíèõ îáëàñòåé emulsion ~ åìóëüñèâíèé ôîòîøàáëîí etch (ing) ~ ìàñêà òðàâëåííÿ etch-resist(ant)~ ìàñêà, ñò³éêà äî òðàâíèêà evaporation ~ ìàñêà äëÿ íàïèëåííÿ øàðó exposure ~ 1. ôîòîøàáëîí 2. ôîòîðåçèñòíèé ìàñêóþ÷èé øàð fault injection ~ ìàñêà âíåñåííÿ íåñïðàâíîñòåé â Â²Ñ (ïðè ïàðàëåëüíîìó ìîäåëþâàíí³, íåñïðàâíîñòåé) faultless ~ áåçäåôåêòíèé øàáëîí field(-oxide)~ 1. øàáëîí äëÿ ôîðìóâàííÿ çàõèñíîãî øàðó îêñèäó 2. îêñèäíèé ìàñêóþ÷èé øàð (ì³æ àêòèâíèìè îáëàñòÿìè) fine-line ~ ïðåöèç³éíèé øàáëîí gold ~ çîëîòà ìàñêà grid ~ øàáëîí äëÿ åëåêòðîííî-ïðîìåíåâî¿ ïðîåêö³éíî¿ ë³òîãðàô³¿ hard-surface ~ çíîñîñò³éêèé ôîòîøàáëîí; ìåòàë³çîâàíèé ôîòîøàáëîí
mas high-contrast X-ray ~ âèñîêî-êîíòðàñòíèé îêñèäóâàííþ 2. îêñèäíà ìàñêà; ìàñêà ç ðåíòãåíîøàáëîí ä³îêñèäó êðåìí³þ high-flatness ~ øàáëîí ç âèñîêîþ oxygen-impermeable ~ ìàñêà, íåïðîíèêíà ïëîùèííîþ äëÿ êèñíþ high-transmission X-ray ~ ðåíòãåíîøàáëîí pattern ~ øàáëîí äëÿ ôîðìóâàííÿ ìàëþíêà âèñîêî¿ ïðîçîðîñò³ pattern transfer ~ øàáëîí äëÿ ïåðåíåñåííÿ IC ~ øàáëîí äëÿ âèãîòîâëåííÿ ²Ñ ìàëþíêà in situ ~ ëîêàëüíà ìàñêà photolithographic ~ 1. ôîòîøàáëîí 2. insulator ~ ìàñêà ç ³çîëÿö³éíîãî ìàòåð³àëó ôîòîðåçèñòíà ìàñêà interconnection ~ øàáëîí äëÿ ôîðìóâàííÿ photoresist ~ ôîòîðåçèñòíà ìàñêà ì³æç’ºäíàíü plating ~ ìàñêà äëÿ åëåêòðîë³òè÷íîãî ion-beam stencil ~ øàáëîí [òðàôàðåò] äëÿ íàíåñåííÿ ïîêðèòòÿ ³îííî¿ ë³òîãðàô³¿ production ~ ðîáî÷èé øàáëîí ion-implantation ~ ìàñêà äëÿ ³îííî¿ program(ming)~ ôîòîøàáëîí äëÿ ³ìïëàíòàö³¿ ïðîãðàìóâàííÿ (íàïð. ÇÏ) iron-oxide ~ ôîòîøàáëîí ç øàðîì îêñèäó projection ~ øàáëîí äëÿ ïðîåêö³éíî¿ çàë³çà ë³òîãðàô³¿ isolation ~ øàáëîí äëÿ ôîðìóâàííÿ p-well ~ øàáëîí äëÿ ôîðìóâàííÿ êèøåíü ð³çîëþþ÷èõ îáëàñòåé òèïó layered ~ áàãàòîøàðîâà ìàñêà quartz ~ 1. ôîòîøàáëîí ç êâàðöîâîãî ñêëà lithographic ~ 1. øàáëîí äëÿ ë³òîãðàô³¿ 2. 2. ìàñêà ç ä³îêñèäó êðåìí³þ ðåçèñòíà ìàñêà refractory ~ ìàñêà ç òóãîïëàâêîãî ìåòàëó master ~ 1. åòàëîííèé ôîòîøàáëîí 2. resistor-body ~ øàáëîí äëÿ ôîðìóâàííÿ îðèã³íàë (ôîòîøàáëîíó) ðåçèñòîð³â metal ~ 1. ìåòàë³çîâàíèé ôîòîøàáëîí; reticle ~ ïðîì³æíèé ôîòîøàáëîí ìåòàëåâà ìàñêà 2. ôîòîøàáëîí äëÿ self-aligned ~ 1. ñàìîñóì³ùåíèé øàáëîí 2. ôîðìóâàííÿ ñïîëó÷íî¿ ìåòàë³çàö³¿ ñàìîñóì³ùåíà ìàñêà metal etched ~ ìåòàëåâà ìàñêà, ñôîðìîâàíà sputter ~ ìàñêà äëÿ ðîçïèëþâàííÿ ìåòîäîì òðàâëåííÿ stencil ~ òðàôàðåò metallization etching ~ ôîòîøàáëîí äëÿ step-and-repeat ~ ôîòîøàáëîí, ôîðìóâàííÿ ñïîëó÷íî¿ ìåòàë³çàö³¿ òèì, ùî âèãîòîâëåíèé ôîòîïîâòîðþâà÷åì òðàâëåííÿ thick-film screen ~ òðàôàðåò äëÿ metal-on-glass ~ ìåòàë³çîâàíèé ôîòîøàáëîí òîâñòîïë³âêîâîþ òåõíîëî㳿 metal-on-polymer ~ øàáëîí ç ìåòàëåâèì thin-film ~ òîíêîïë³âêîâà ìàñêà øàðîì íà ïîë³ìåðí³é ïë³âö³ (äëÿ trench ~ ìàñêà äëÿ âèòðàâëåííÿ êàíàâîê ðåíòãåíîë³òîãðàô賿) vacuum-deposition ~ ìàñêà äëÿ moving ~ â³ëüíà ìàñêà òåðìîâàêóóìíîãî îñàäæåííÿ multi-pinhole ~ 1. ôîòîøàáëîí ç âåëèêîþ work ~ ðîáî÷èé ôîòîøàáëîí ê³ëüê³ñòþ òî÷êîâèõ ïðîêîë³â 2. ìàñêà ç X-ray (lithography) ~ ìàñêà [øàáëîí] äëÿ âåëèêîþ ê³ëüê³ñòþ òî÷êîâèõ ïðîêîë³â ðåíòãåí³âñüêî¿ ë³òîãðàô³¿, ðåíòãåíîøàáëîí native îõide ~ ìàñêà ç âëàñíîãî îêñèäó 1 negative ~ íåãàòèâíèé ôîòîøàáëîí; x ~ îäèíàðíèé ôîòîøàáëîí, ôîòîøàáëîí ç íåãàòèâíà ôîòîðåçèñòíà ìàñêà îäí³ºþ ñòðóêòóðîþ nonerodible ~ ìàñêà, ùî íå òðàâèòüñÿ 1:1 ~ ôîòîøàáëîí áåç ìàñøòàáóâàííÿ offset ~ çì³ùåíà ìàñêà maskant ìàòåð³àë äëÿ ôîðìóâàííÿ optical ~ ôîòîøàáëîí ìàñêóþ÷îãî øàðó optical gate ~ ìàñêà ç îïòè÷íèì â³êíîì masking 1. ìàñêóâàííÿ 2. ë³òîãðàô³ÿ overlaid ~ ìàñêà íà íàï³âïðîâ³äíèêîâ³é diffusion ~ ìàñêóâàííÿ äëÿ äèôó糿 ïëàñòèí³ dry ~ ñóõå ìàñêóâàííÿ (íàíåñåííÿ oxidation ~ 1. ìàñêà, ùî ïåðåøêîäæຠôîòîðåçèñòà íà ïëàñòèíó ç ïîäàëüøîþ éîãî
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mat ñóøêîþ, åêñïîíóâàííÿì ³ âèá³ðêîâèì âèäàëåííÿì) metallization ~ ìàñêóâàííÿ äëÿ ôîðìóâàííÿ ñïîëó÷íî¿ ìåòàë³çàö³¿ nitride ~ ôîðìóâàííÿ ìàñêè ç í³òðèäó êðåìí³þ optical ~ ôîòîìàñêóâàííÿ oxidation ~ 1. ìàñêóâàííÿ, ïåðåøêîäæàþ÷å îêñèäóâàííþ 2. îêñèäíå ìàñêóâàííÿ oxide ~ îêñèäíå ìàñêóâàííÿ photo ~ ôîòîìàñêóâàííÿ photoresist ~ ôîòîðåçèñòíå ìàñêóâàííÿ projection ~ ìàñêóâàííÿ ïðè ïðîåêö³éí³é ë³òîãðàô³¿ reticle ~ ìàñêóâàííÿ ç âèêîðèñòàííÿì ïðîì³æíîãî ôîòîøàáëîíó selective (photoresist) ~ âèá³ðêîâå ôîòîðåçèñòíå ìàñêóâàííÿ silicon-dioxide ~ ìàñêóâàííÿ ä³îêñèäîì êðåìí³þ wet ~ âîëîãå ìàñêóâàííÿ (ï³ñëÿ ñóõîãî ìàñêóâàííÿ ôîðìóâàííÿ îêñèäíî¿ ìàñêè ð³äèííèì, àáî ïëàçìîâèì òðàâëåííÿ ÷åðåç ôîòîðåçèñòíó ìàñêó) mask-programmable ïðîãðàìîâàíèé øàáëîíîì, ç ìàñêîâèì ïðîãðàìóâàííÿì mass; effective ~ åôåêòèâíà ìàñà (íîñ³ÿ çàðÿäó) massolithography ìàññîë³òîãðàô³ÿ (çàñòîñóâàííÿ ñêàíóþ÷îãî òóíåëüíîãî ì³êðîñêîïà äëÿ ôîðìóâàííÿ íàíîìåòðîâèõ ñòðóêòóð) master 1. îðèã³íàë (ôîòîøàáëîíó); ôîòîîðèã³íàë 2. åòàëîííèé ôîòîøàáëîí artwork ~ îðèã³íàë; ïðîì³æíèé ôîòîøàáëîí chrome ~ õðîìîâàíèé ïðîì³æíèé ôîòîøàáëîí electron-beam ~ îðèã³íàë, âèãîòîâëåíèé ìåòîäîì åëåêòðîííî-ïðîìåíåâî¿ òåõíîëî㳿 hard-surface ~ çíîñîñò³éêèé îðèã³íàë; çíîñîñò³éêèé ôîòîîðèã³íàë optical projection ~ ôîòîîðèã³íàë äëÿ ïðîåêö³éíî¿ ôîòîë³òîãðàô³¿ photoplate ~ ôîòîîðèã³íàë; åòàëîííèé ôîòîøàáëîí production ~ ðîáî÷èé ôîòîîðèã³íàë; ðîáî÷èé ôîòîøàáëîí masterMOS áàçîâèé ìàòðè÷íèé êðèñòàë ç ÌÎÍ-êîì³ðêàìè
masterslice áàçîâèé ìàòðè÷íèé êðèñòàë, ÁÌÊ CMOS ~ ÊÌÎÍ-áàçîâèé ìàòðè÷íèé êðèñòàë gate-array ~ áàçîâèé ìàòðè÷íèé êðèñòàë òèïó ìàòðèö³ ëîã³÷íèõ åëåìåíò³â integrated Schottky logic ~ áàçîâèé ìàòðè÷íèé êðèñòàë íà ³íòåãðàëüí³é ëîã³ö³ Øîòê³ semicustom ~ áàçîâèé ìàòðè÷íèé êðèñòàë äëÿ âèãîòîâëåííÿ íàï³âçàìîâëåíèõ ²Ñ mat: clean-area ~ êèëèìîê äëÿ ÷èñòî¿ ê³ìíàòè conductive-rubber floor ~ êèëèìîê ç åëåêòðîïðîâ³äíî¿ ãóìè äëÿ ï³äëîãè (äëÿ â³äâåäåííÿ åëåêòðîñòàòè÷íèõ çàðÿä³â) matching óçãîäæåííÿ admittance ~ óçãîäæåííÿ ïîâíèõ ïðîâ³äíîñòåé lattice ~ óçãîäæåííÿ ïîñò³éíèõ êðèñòàë³÷íèõ ãðàòîê thermal(-åxpansion) ~ óçãîäæåííÿ êîåô³ö³ºíò³â òåðì³÷íîãî ðîçøèðåííÿ, óçãîäæåííÿ ÊÒÐ material: abrasive ~ àáðàçèâ, àáðàçèâíèé ìàòåð³àë acceptor ~ àêöåïòîðíà äîì³øêà adulterated semiconductor ~ çàáðóäíåíèé íàï³âïðîâ³äíèêîâèé ìàòåð³àë base ~ ìàòåð³àë äëÿ îñíîâè; ìàòåð³àë äëÿ ï³äêëàäêè binding ~ çâ’ÿçóþ÷à (ðå÷îâèíà) brittle ~ êðèõêèé ìàòåð³àë bubble ~ ìàòåð³àë ç ÖÌÄ carrier ~ ìàòåð³àë äëÿ ï³äñòàâ; ìàòåð³àë äëÿ ï³äêëàäêè cermet ~ êåðìåò, ìåòàëîêåðàì³÷íèé ìàòåð³àë coarse-featured resist ~ ôîòîðåçèñò, çàáåçïå÷óþ÷èé íèçüêèé äîçâ³ë composite ~ êîìïîçèö³éíèé ìàòåð³àë, êîìïîçèò compound semiconductor ~ ìàòåð³àë íà îñíîâ³ íàï³âïðîâ³äíèêîâîãî ç’ºäíàííÿ conductivity-type imparting ~ ìàòåð³àë, ùî âèçíà÷ຠòèï ïèòîìî¿ ïðîâ³äíîñò³; ëåãóþ÷à äîì³øêà contact ~ ìàòåð³àë äëÿ ôîðìóâàííÿ êîíòàêò³â contrast enhancing ~ ìàòåð³àë, ÿêèé ïîë³ïøóº êîíòðàñò (ó ôîòîë³òîãðàô³¿)
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mat dopant masking ~ ìàñêóþ÷èé ìàòåð³àë äëÿ ëåãóâàííÿ doped ~ ëåãîâàíèé ìàòåð³àë doping ~ ëåãóþ÷èé ìàòåð³àë electronic ~ ìàòåð³àë åëåêòðîííî¿ ÷èñòîòè electron resist ~ åëåêòðîííèé ðåçèñò, åëåêòðîíîðåçèñò encapsulating [encapsulation] ~ ãåðìåòèçóþ÷èé ìàòåð³àë epitaxial ~ ìàòåð³àë, âèðîùåíèé ìåòîäîì åï³òàêñ³¿, åï³òàêñ³àëüíèé ìàòåð³àë etchant masking ~ ìàñêóþ÷èé ìàòåð³àë äëÿ òðàâëåííÿ etching ~ òðàâíèê evaporated [evaporation] ~ 1. íàïèëþâàíèé ìàòåð³àë 2. âèïàðîâóâàíèé ìàòåð³àë filler ~ íàïîâíþâà÷ film ~ ïë³âêîâèé ìàòåð³àë fine-featured resist ~ ôîòîðåçèñò, çàáåçïå÷óþ÷èé âèñîêèé äîçâ³ë foreign ~ çàáðóäíåííÿ, íåáàæàíà äîì³øêà fragile ~ êðèõêèé ìàòåð³àë group III-V compound semiconductor ~ íàï³âïðîâ³äíèêîâà ñïîëóêà òèïó AIIIBV heavily doped ~ ñèëüíîëåãîâàíèé ìàòåð³àë high-resistivity ~ ìàòåð³àë ç âèñîêèì ïèòîìèì îïîðîì host ~ âèñõ³äíèé ìàòåð³àë; ìàòåð³àë ï³äêëàäêè äëÿ âèðîùóâàííÿ åï³òàêñ³àëüíîãî øàðó impurity ~ ëåãóþ÷èé ìàòåð³àë laminated ~ øàðóâàòèé ìàòåð³àë liquid-crystal ~ ð³äêîêðèñòàë³÷íèé ìàòåð³àë lowly doped ~ ñëàáîëåãèðîâàííûé ìàòåð³àë low-resistivity ~ ìàòåð³àë ç íèçüêèì ïèòîìèì îïîðîì LSCO ~ (íàäïðîâ³äíèêîâà) ñïîëóêà òèïó La–Sr–Cu–O magnetostrictive ~ ìàãí³òîñòðèêö³éíèé ìàòåð³àë mask(-forming) ~ ìàñêóþ÷èé ìàòåð³àë, ìàòåð³àë äëÿ ìàñêè mismatched ~s íàï³âïðîâ³äíèêîâ³ ìàòåð³àëè ç ð³çíèìè ïîñò³éíèìè êðèñòàë³÷íèõ ãðàòîê molding ~ ôîðìóâàëüíèé ìàòåð³àë multilayer ~ áàãàòîøàðîâèé ìàòåð³àë negative-image ~ íåãàòèâíèé ðåçèñò organosilicone ~ êðåìí³éîðãàí³÷íèé ìàòåð³àë packaging ~ ãåðìåòèçóþ÷èé ìàòåð³àë
parent ~ âèñõ³äíèé ìàòåð³àë; ìàòåð³àë ï³äêëàäêè äëÿ âèðîùóâàííÿ åï³òàêñ³àëüíîãî øàðó patterned ~ ðåëüºôíèé ìàòåð³àë; ñòðóêòóðîâàíèé ìàòåð³àë photoresist ~ ôîòîðåçèñò photoresponsive [photosensitive] ~ ñâ³òëî÷óòëèâèé ìàòåð³àë; ôîòîðåçèñò piezoelectric ~ ï’ºçîåëåêòðè÷íèé ìàòåð³àë, ï’ºçîåëåêòðèê plastic ~ ïëàñòìàñà polycrystalline ~ ïîë³êðèñòàë³÷íèé ìàòåð³àë positive-image ~ ïîçèòèâíèé ðåçèñò refractory ~ òóãîïëàâêèé ìàòåð³àë resist ~ ðåçèñò; ôîòîðåçèñò resistive ~ ðåçèñòèâíèé ìàòåð³àë semiconductive [semiconductor] ~ íàï³âïðîâ³äíèê (äèâ. ò-æ semiconductor) semiconductor-glass composite ~ êîìïîçèö³éíèé ìàòåð³àë íàï³âïðîâ³äíèê– ñêëî silicon-on-insulator ~ ìàòåð³àë ³ç ñòðóêòóðîþ òèïó «êðåìí³é íà ä³åëåêòðèö³», ÊÍÄ-ìàòåð³àë silicon-on-sapphire ~ ìàòåð³àë ³ç ñòðóêòóðîþ òèïó «êðåìí³é íà ñàïô³ð³», ÊÍÑ-ìàòåð³àë Si-MBE ~ íàï³âïðîâ³äíèêîâèé ìàòåð³àë ç ìîëåêóëÿðíî-åï³òàêñ³àëüíèì øàðîì êðåìí³þ single-crystal ~ ìîíîêðèñòàë³÷íèé ìàòåð³àë spinel ~ øïèíåëü starting ~ âèõ³äíèé ìàòåð³àë stop-etch ~ ìàòåð³àë, ÿêèé ïåðåøêîäæຠòðàâëåííþ substrate ~ ìàòåð³àë äëÿ ï³äêëàäêè superconducting ~ íàäïðîâ³äíèê support ~ ìàòåð³àë äëÿ îñíîâè; ìàòåð³àë äëÿ ï³äêëàäêè thallium-based ~ (íàäïðîâ³äíèêîâà) ñïîëóêà íà îñíîâ³ òàë³ÿ thixotropic ~ òèêñîòðîïíèé ìàòåð³àë virgin ~ 1. âèõ³äíèé ìàòåð³àë 2. áåçïðèì³ñíèé ìàòåð³àë Y–Ba–Cu–O ~ (íàäïðîâ³äíèêîâà) ñïîëóêà òèïó Y–Âà–Cu–Î Y 1–Ba 2 –Cu 3 –O 7-x ~ (íàäïðîâ³äíèêîâà) ñïîëóêà òèïó Y1–Âà2–Cu3–Î7-x 1-2-3 ~ (íàäïðîâ³äíèêîâà) ñïîëóêà òèïó 1– 2–3 matrix ìàòðèöÿ (äèâ. ò-æ array)
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mem adjacency ~ ìàòðèöÿ ñóì³æíîñò³ (äëÿ âåðøèí â ãðàô³ òîïîëî㳿) admittance ~ ìàòðèöÿ ïîâíèõ ïðîâ³äíîñòåé identity ~ îäèíè÷íà ìàòðèöÿ interconnection ~ ìàòðèöÿ ì³æç’ºäíàíü layered ~ áàãàòîøàðîâà ìàòðèöÿ light-emitting diode ~ ñâ³òëîä³îäíà ìàòðèöÿ, ìàòðèöÿ ñâ³òëîä³îä³â memory ~ ìàòðèöÿ (åëåìåíò³â) ïàì’ÿò³ metastable ~ ìåòàñòàá³ëüí³ ãðàòêè (êðèñòàë³÷íî¿ ðå÷îâèíè) multipattern [pattern] ~ ìàòðèöÿ çîáðàæåíü ñòðóêòóð (íà ôîòîøàáëîí³) reachability ~ ìàòðèöÿ äîñÿæíîñò³; ìàòðèöÿ ñóì³æíîñò³ (äëÿ âåðøèí â ãðàô³ òîïîëî㳿) sparse ~ ðîçð³äæåíà ìàòðèöÿ matter. foreign ~ çàáðóäíåííÿ, íåáàæàíà äîì³øêà superconducting ~ íàäïðîâ³äíèê meander çèãçàãîïîä³áíå ç’ºäíàííÿ (â ì³ñöÿõ ì³æ êîì³ðêàìè ²Ñ) means 1. ïðèñòð³é; çàñ³á; ïðèñòîñóâàííÿ 2. ñïîñ³á; ìåòîä complementary-transistor ~ ïðèñòð³é íà êîìïëåìåíòàðíèõ òðàíçèñòîðàõ masking ~ ìàñêóþ÷èé ïðèñòð³é, ìàñêà scribing ~ ñêðàéáóþ÷èé ïðèñòð³é, ñêðàéáåð measling äåôåêò (áàãàòîøàðîâî¿ äðóêîâàíî¿ ïëàò³) ó âèãëÿä³ á³ëèõ ïëÿì, âèêëèêàíèõ ÷àñòêîâèì â³äøàðîâóâàííÿì øàð³â measure: testability ~ ïîêàçíèê [ì³ðà] òåñòîïðèäàòíîñò³ (âêëþ÷àþ÷èé êåðîâàí³ñòü ³ ñïîñòåðåæóâàí³ñòü) measurement: electron microprobe composition ~ âèì³ðþâàííÿ ñêëàäó ðå÷îâèíè çà äîïîìîãîþ åëåêòðîííîãî ì³êðîçîíäà four(-point) probe ~ âèì³ðþâàííÿ ÷îòèðüîõçîíäîâèì ìåòîäîì Hall ~s âèì³ðþâàííÿ (êîíöåíòðàö³¿ ³ ðóõëèâîñò³ åëåêòðîí³â àáî ä³ðîê), ÿê³ ãðóíòóþòüñÿ íà åôåêò³ Õîëëà, õîëë³âñüê³ âèì³ðþâàííÿ multipoint ~ áàãàòîçîíäîâ³ âèì³ðþâàííÿ proximity effect ~ 1. âèì³ðþâàííÿ ñòóïåíÿ ïðîÿâó åôåêòó áëèçüêîñò³ 2. âèì³ðþâàííÿ (ì³í³ìàëüíèõ ðîçì³ð³â åëåìåíò³â) â óìîâàõ åôåêòó áëèçüêîñò³ mechanism:
aging ~ ìåõàí³çì ñòàð³ííÿ alignment ~ óñòàíîâêà ñóì³ùåííÿ (³ åêñïîíóâàííÿ); óñòàíîâêà ë³òîãðàô³¿ avalanche ~ ìåõàí³çì âèíèêíåííÿ ëàâèííîãî ïðîöåñó step-and-repeat ~ ïðèñòð³é êðîêîâîãî ïåðåì³ùåííÿ (â óñòàíîâö³ ñóì³ùåííÿ ³ åêñïîíóâàííÿ); ôîòîïîâòîðþâà÷, ôîòîøòàìï medium: aqueous ~ âîäíå ñåðåäîâèùå computer ~ îá÷èñëþâàëüíå ñåðåäîâèùå; ìàøèíî÷èòàåìèé íîñ³é conducting ~ ïðîâ³äíå ñåðåäîâèùå doping ~ ëåãóþ÷èé ìàòåð³àë filling ~ íàïîâíþâà÷ gaseous ~ ãàçîïîä³áíå ñåðåäîâèùå; ãàçîïîä³áíà ðå÷îâèíà layered ~ øàðóâàòèé ìàòåð³àë light-sensitive ~ ñâ³òëî÷óòëèâå [ôîòî÷óòëèâà] ñåðåäîâèùå masking ~ ìàñêóþ÷èé ìàòåð³àë, ìàòåð³àë äëÿ ìàñêè Meeting: International Electron Devices ~ ̳æíàðîäíà êîíôåðåíö³ÿ ïî åëåêòðîííèõ ïðèëàäàõ megacell âåëèêèé êîì³ðêà; á³áë³îòå÷íèé ôóíêö³îíàëüíèé áëîê (íàçâà ñå𳿠ÊÌÎÍ ÁÌÊ ô³ðìè VLSI Technology) megachip ²Ñ ³ç ñòóïåíåì ³íòåãðàö³¿ 10 6 åëåìåíò³â, ìåãà÷³ï melt 1. ïëàâêà, ïëàâëåííÿ; ðîçïëàâëåííÿ (äèâ. ò-æ melting) | ïëàâèòè(ñÿ); ðîçïëàâëÿòè 2. ðîçïëàâ doped ~ ëåãîâàíèé ðîçïëàâ etch ~ òðàâèëüíèé ðîçïëàâ semiconductor ~ ðîçïëàâ íàï³âïðîâ³äíèêîâîãî ìàòåð³àëó meltback îïëàâëåííÿ; ñïëàâ melting ïëàâêà, ïëàâëåííÿ; ðîçïëàâëåííÿ crucible ~ òèãåëüíà ïëàâêà floating-zone ~ çîííà ïëàâêà photo-induced temperature gradient zone ~ çîííà ïëàâêà ç ôîòî³íäóêîâàíèì òåìïåðàòóðíèì ãðà䳺íòîì temperature gradient zone ~ çîííà ïëàâêà ç òåìïåðàòóðíèì ãðà䳺íòîì vacuum ~ âàêóóìíà ïëàâêà member:
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mem base ~ îñíîâà; ï³äêëàäêà integrated-circuit ~ åëåìåíò ²Ñ, ³íòåãðàëüíèé åëåìåíò TTL-based ~ åëåìåíò ÒÒË, ÒÒË-åëåìåíò membrane ìåìáðàíà; ä³àôðàãìà boron nitride ~ ìåìáðàíà ç í³òðèäó áîðó ion-exchange ~ ³îíîîáì³ííà ìåìáðàíà mask ~ ïë³âêà–ï³äêëàäêà äëÿ øàáëîíà (³îííî-ïðîìåíåâî¿ ë³òîãðàô³¿); ìàñêóþ÷à ïë³âêà polyimide ~ ïîë³³ì³äíà ìåìáðàíà semipermeable ~ íàï³âïðîíèêíà ìåìáðàíà memory ïàì’ÿòü; çàïàì’ÿòîâóþ÷èé ïðèñòð³é, ÇÏ acoustic ~ àêóñòè÷íà ïàì’ÿòü add-on ~ äîäàòêîâà ïàì’ÿòü array ~ ìàòðèöÿ åëåìåíò³â ïàì’ÿò³ AS ~ ²Ñ ïàì’ÿò³, ñïåö³àë³çîâàíà êîðèñòóâà÷åì associate ~ àñîö³àòèâíà ïàì’ÿòü auxiliary ~ äîïîì³æíà ïàì’ÿòü backing ~ ðåçåðâíà ïàì’ÿòü beam-addressed ~ ïàì’ÿòü ç åëåêòðîííîïðîìåíåâîþ àäðåñíîþ âèá³ðêîþ bipolar ~ ïàì’ÿòü íà á³ïîëÿðíèõ òðàíçèñòîðàõ block-oriented ~ áëîêîâî-îð³ºíòîâàíà ïàì’ÿòü bucket-brigade ~ ïàì’ÿòü íà ïðèëàäàõ òèïó «ïîæåæíèé ëàíöþæîê» buffer ~ áóôåðíà ïàì’ÿòü byte-wide random-àñcess ~ ÇÏÏ ç áàéòîâîþ îðãàí³çàö³ºþ chalcogenide ~ ÇÏ íà õàëüêîãåí³äíèõ åëåìåíòàõ ïàì’ÿò³ charge-coupled (device) ~ ïàì’ÿòü íà ÏÇÇ charge ðàñked ~ åëåêòðîñòàòè÷íèé ÇÏ charge-pumping ~ ïàì’ÿòü ç ï³äêà÷êîþ çàðÿä³â CMOS/SOS ~ ïàì’ÿòü íà êîìïëåìåíòàðíèõ ÌÎÍ-òðàíçèñòîðàõ ç ÊÍÑ-ñòðóêòóðîþ content-addressable ~ àñîö³àòèâíà ïàì’ÿòü contiguous-disk bubble ~ ïàì’ÿòü íà ÖÌÄ ç ñõåìîþ ïðîñóâàííÿ íà äîòè÷íèõ äèñêàõ control ~ êåðóþ÷à ïàì’ÿòü cross-tie ~ ïàì’ÿòü íà äîìåííèõ ìåæàõ ç ïîïåðå÷íèìè çâ’ÿçêàìè cryoelectronic ~ êð³îåëåêòðîííà ïàì’ÿòü cryogenic ~ êð³îãåííà ïàì’ÿòü cryotron ~ ïàì’ÿòü íà êð³îòðîíàõ
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current-àñcess magnetic-bubble ~ ïàì’ÿòü íà ÖÌÄ ³ç ñòðóìîâîþ âèá³ðêîþ destructive ~ ïàì’ÿòü ç ðóéíóâàííÿì ³íôîðìàö³¿ ïðè ïðî÷èòóâàíí³ direct addressable ~ ïàì’ÿòü ç ïðÿìîþ àäðåñíîþ âèá³ðêîþ dynamic ~ äèíàì³÷íà ïàì’ÿòü electrically-alterable read-only ~ åëåêòðè÷íî ïåðåïðîãðàììîâóâàíèé ÏÇÏ, ÅÏÏÇÏ electrically-erasable ~ ÇÏ ç åëåêòðè÷íî ñòèðàíîþ ³íôîðìàö³ºþ electronic-beam addressable ~ ïàì’ÿòü ç åëåêòðîííî-ïðîìåíåâîþ àäðåñíîþ âèá³ðêîþ emitter-coupled logic compatible ~ ïàì’ÿòü, ñóì³ñíà ç ²Ñ íà ÅÇË (ïî ð³âíÿõ ñèãíàë³â) erasable programmable readonly ~ ïðîãðàìîâàíå ïîñò³éíå ÇÏ [ÏÏÇÏ] ³ç ñòèðàííÿì ³íôîðìàö³¿ external ~ çîâí³øíÿ ïàì’ÿòü factory-programmable read-only ~ ÏÇÏ, ïðîãðàìîâàíèé êîðèñòóâà÷åì fast ~ øâèäêîä³éíèé ÇÏ field-programmable read-only ~ ÏÇÏ, ïðîãðàìîâàíèé êîðèñòóâà÷åì fixed ~ ïîñò³éíèé ÇÏ, ÏÇÏ fractional ~ ñåêö³îíîâàíà ïàì’ÿòü full wafer ~ ïàì’ÿòü íà ö³ë³é íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ fusible-link programmable readonly ~ ÏÇÏ, ïðîãðàìîâàíèé ðóéíóâàííÿì ïëàâêèõ ïåðåìè÷îê general-purpose ~ óí³âåðñàëüíà ïàì’ÿòü high-density ~ ïàì’ÿòü ç âèñîêîþ ãóñòèíîþ ðîçì³ùåííÿ åëåìåíò³â high-speed ~ øâèäêîä³éíèé ÇÏ IC ~ ²Ñ ïàì’ÿò³, íàï³âïðîâ³äíèêîâà ïàì’ÿòü I2L ~ ²Ñ ïàì’ÿò³ íà åëåìåíòàõ ²2Ë laser-programmed ~ ÇÏ, ïðîãðàìîâàíèé ëàçåðîì line-addressable random-àñcess ~ ïàì’ÿòü ç äîâ³ëüíîþ àäðåñíîþ âèá³ðêîþ ïî ðÿäêàõ magnetic-bubble ~ ïàì’ÿòü íà ÖÌÄ magnetic-film ~ ïàì’ÿòü íà (òîíêèõ) ìàãí³òíèõ ïë³âêàõ magnetooptic ~ ìàãí³òîîïòè÷íà ïàì’ÿòü mask-programmed ~ ÇÏ, ïðîãðàìîâàíèé øàáëîíîì mass(-storage)~ ìàñîâà ïàì’ÿòü
met matrix ~ ìàòðèöÿ åëåìåíò³â ïàì’ÿò³, ìàòðè÷íà ïàì’ÿòü microprogram ~ ÇÏ ç ì³êðîïðîãðàìóâàííÿì molecular ~ ìîëåêóëÿðíèé ÇÏ (íà ïîë³ìåð³) moving-domain ~ ïàì’ÿòü íà ðóõîìèõ äîìåíàõ MTL ~ ²Ñ ïàì’ÿò³ íà åëåìåíòàõ ²2Ë multichip ~ áàãàòîêðèñòàëüíà ²Ñ ïàì’ÿò³ multilevel ~ áàãàòîð³âíåâà ïàì’ÿòü nano ~ ÇÏ ç íàíîñåêóíäíîþ øâèäêî䳺þ nondestructive ~ ïàì’ÿòü áåç ðóéíóâàííÿ ³íôîðìàö³¿ ïðè ïðî÷èòóâàíí³ nonvolatile ~ åíåðãîçàëåæíà ïàì’ÿòü object-oriented ~ îá’ºêòíî-îð³ºíòîâàíèé ÇÏ off-chip ~ íàâ³ñíèé ÇÏ on-chip ~ ïàì’ÿòü íà îäíîìó êðèñòàë³ ç ³íøîþ ²Ñ one-transistor ~ ïàì’ÿòü íà îäíîòðàíçèñòîðíèõ åëåìåíòàõ optical ~ îïòè÷íà ïàì’ÿòü ovonic ~ ïàì’ÿòü íà åëåìåíòàõ Îâøèíñüêîãî permanent ~ ïîñò³éíèé ÇÏ, ÏÇÏ polymer ~ ìîëåêóëÿðíèé ÇÏ íà ïîë³ìåð³ power-down ~ ÇÏ ç íèçüêîþ ñïîæèâàíîþ ïîòóæí³ñòþ programmable read-only ~ ïðîãðàìîâàíèé ÏÇÏ, ÏÏÇÏ pseudostatic ~ ïñåâäîñòàòè÷íèé ÇÏ (ç ïåð³îäè÷íîþ ðåãåíåðàö³ºþ) random access ~ ÇÏ ç äîâ³ëüíîþ âèá³ðêîþ, ÇÏÏ read-mostly ~ íàï³âïîñò³éíèé ÇÏ, ÇÏ ç ïåðåçàïèñîì ³íôîðìàö³¿ read-only ~ ïîñò³éíèé ÇÏ, ÏÇÏ registered programmable readonly ~ ðåã³ñòðîâèé ÏÏÇÓ reprogrammable ~ ïåðåïðîãðàììîâóâàíèé ÇÏ Schottky programmable readonly ~ ÏÏÇÓ íà ä³îäàõ Øîòê³ scratch-pad ~ íàäîïåðàòèâíà ïàì’ÿòü áëîêíîòíîãî òèïó self-refreshing ~ ÇÏ ç ïåð³îäè÷íîþ ñàìîðåãåíåðàö³ºþ semiconductor ~ íàï³âïðîâ³äíèêîâà ïàì’ÿòü semipermanent ~ íàï³âïîñò³éíèé ÇÏ, ÇÏ ç ïåðåçàïèñîì ³íôîðìàö³¿ solid-state ~ òâåðäîò³ëüíà´ ïàì’ÿòü; íàï³âïðîâ³äíèêîâà ïàì’ÿòü stack ~ ñòåêîâà ïàì’ÿòü
static ~ ñòàòè÷íà ïàì’ÿòü static-induction transistor ~ ïàì’ÿòü íà ïîëüîâèõ òðàíçèñòîðàõ ç ð–n-ïåðåõîäîì ³ âåðòèêàëüíèì êàíàëîì, ïàì’ÿòü íà ñòàòè÷íèõ ³íäóêö³éíèõ òðàíçèñòîðàõ superconductor [supercurrent] ~ ïàì’ÿòü íà íàäïðîâ³äíèêîâèõ åëåìåíòàõ, íàäïðîâ³äíèêîâà ïàì’ÿòü superdense ~ ïàì’ÿòü ç íàäâèñîêîþ ãóñòèíîþ ðîçì³ùåííÿ åëåìåíò³â superhigh-speed ~ íàäøâèäêîä³þ÷èé ÇÏ three-dimensional ~ òðèâèì³ðíà ïàì’ÿòü ultradense ~ ïàì’ÿòü ç íàäâèñîêîþ ãóñòèíîþ ðîçì³ùåííÿ åëåìåíò³â ultraviolet erasable ~ ÇÏ ç óëüòðàô³îëåòîâèì [ÓÔ-]ñòèðàííÿì ³íôîðìàö³¿ VLSI ~ ÍÂ²Ñ ïàì’ÿò³ volatile ~ åíåðãîçàëåæíà ïàì’ÿòü zeropower ~ åíåðãîçàëåæíà ïàì’ÿòü mesa ìåçàñòðóêòóðà etched ~ âèòðàâëåíà ìåçàñòðóêòóðà reverse ~ çâîðîòíà ìåçàñòðóêòóðà semiconductor ~ íàï³âïðîâ³äíèêîâà ìåçàñòðóêòóðà mesh 1. ìåø (÷èñëî îòâîð³â, ùî ïðèïàäàþòü íà 25,4 ìì) 2. êîì³ðêà, îòâ³ð (íàïð. â òðàôàðåò³); ðîçì³ð êîì³ðêè, ðîçì³ð îòâîðó screen(-wire)~ ðîçì³ð êîì³ðêè â äðîòÿíîìó òðàôàðåò³ mesotaxy òâåðäîôàçíà åï³òàêñ³ÿ â îá’ºì³ êðèñòàëà message: closing ~ ù³ëüíå ïîâ³äîìëåííÿ pass ~ ïîâ³äîìëåííÿ «íåñïðàâí³ñòü íå çíàéäåíà» metal: base ~ 1. íåáëàãîðîäíèé ìåòàë 2. îñíîâíèé ìåòàë (ñïëàâó) high-work function ~ ìåòàë ç âèñîêîþ ðîáîòîþ âèõîäó impurity ~ äîì³øêîâèé ìåòàë low-work function ~ ìåòàë ç íèçüêîþ ðîáîòîþ âèõîäó noble ~ áëàãîðîäíèé ìåòàë ohmic ~ ìåòàë äëÿ ôîðìóâàííÿ îì³÷íèõ êîíòàêò³â precious ~ áëàãîðîäíèé ìåòàë rare-earth ~ ð³äêîçåìåëüíèé ìåòàë refractory ~ òóãîïëàâêèé ìåòàë
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met Schottky-barrier gate ~ ìåòàë äëÿ ôîðìóâàííÿ çàòâîðà Øîòê³ screen-on ~ ìåòàë, íàíåñåíèé íà ï³äêëàäêó ìåòîäîì òðàôàðåòíîãî äðóêó transition ~ ïåðåõ³äíèé ìåòàë metal-alumina-oxide-semiconductor ñòðóêòóðà ìåòàë–îêñèä àëþì³í³þ–îêñèä– íàï³âïðîâ³äíèê, ÌÀÎÏ-ñòðóêòóðà metal-alumina-semiconductor ñòðóêòóðà ìåòàë–îêñèä àëþì³í³þ–íàï³âïðîâ³äíèê, ÌÎÀÏ-ñòðóêòóðà metal-insulator-metal ñòðóêòóðà ìåòàë– ä³åëåêòðèê–ìåòàë, ÌÄÌ-ñòðóêòóðà metal-insulator-îõ ide-semiconductor ñòðóêòóðà ìåòàë–ä³åëåêòðèê–îêñèä– íàï³âïðîâ³äíèê metal-insulator-silicon ñòðóêòóðà ìåòàë– ä³åëåêòðèê–êðåìí³é metallization (ñïîëó÷íà) ìåòàë³çàö³ÿ air-bridge ~ ìåòàë³çàö³ÿ (ïîâåðõí³) ç ïîâ³òðÿíèìè êàíàâêàìè ³ ïåðåìè÷êàìè (äëÿ çìåíøåííÿ ºìíîñò³ ³ ï³äâèùåííÿ øâèäêî䳿) Al/Si ~ àëþì³í³ºâà ìåòàë³çàö³ÿ íà êðåìí³¿ barrier ~ ìåòàë³çàö³ÿ äëÿ ôîðìóâàííÿ çàìèêàþ÷îãî øàðó bridging ~ çàìèêàþ÷³ ïåðåìè÷êè â ñïîëó÷í³é ìåòàë³çàö³¿ (äåôåêòè ìåòàë³çàö³¿) Cr-Cu-Au ~ ìåòàë³çàö³ÿ òèïó Cr–Cu–Au, ñèñòåìà ìåòàë³çàö³¿ õðîì–ì³äü–çîëîòî electron-beam ~ åëåêòðîííî-ïðîìåíåâà ìåòàë³çàö³ÿ fine-line ~ ïðåöèç³éíà ìåòàë³çàö³ÿ fixed-pattern ~ ìåòàë³çàö³ÿ äëÿ ôîðìóâàííÿ ô³êñîâàíèõ ç’ºäíàíü, ô³êñîâàíà ñïîëó÷íà ìåòàë³çàö³ÿ gate ~ ìåòàë³çàö³ÿ äëÿ ôîðìóâàííÿ åëåêòðîä³â çàòâîðà interlayer [interlevel] ~ ì³æð³âíåâà (âíóòð³øíÿ) ìåòàë³çàö³ÿ lift-off ~ ìåòàë³çàö³ÿ, ñôîðìîâàíà ìåòîäîì çâîðîòíî¿ ôîòîë³òîãðàô³¿ multilayer ~ áàãàòîð³âíåâà [áàãàòîøàðîâà] ìåòàë³çàö³ÿ ohmic ~ ìåòàë³çàö³ÿ îì³÷íèõ êîíòàêò³â planar ~ ìåòàë³çàö³ÿ ïëîñêî¿ ïîâåðõí³ recessed ~ ìåòàë³çàö³ÿ ïîâåðõí³ êàíàâîê silver-palladium ~ ìåòàë³çàö³ÿ ñð³áíîïàëà䳺âîþ ïàñòîþ thick-film ~ òîâñòîïë³âêîâà ìåòàë³çàö³ÿ
thin-film ~ òîíêîïë³âêîâà ìåòàë³çàö³ÿ VLSI ~ ìåòàë³çàö³ÿ äëÿ ôîðìóâàííÿ ç’ºäíàíü ³ êîíòàêò³â ÍÂ²Ñ metallo-organics ìåòàëîîðãàí³÷í³ ñïîëóêè, ÌÎÑ metallurgy 1. ìåòàëóðã³ÿ 2. ìåòàëåâ³ ñèñòåìè; ìåòàëè Al–Cu–Si ~ ìåòàëåâà ñèñòåìà Àl–Cu–Si interconnection ~ ìåòàëåâ³ ñèñòåìè äëÿ ì³æç’ºäíàíü; ìåòàëè äëÿ ì³æç’ºäíàíü powder ~ ïîðîøêîâà ìåòàëóðã³ÿ terminal ~ ìåòàëåâ³ ñèñòåìè äëÿ êîíòàêò³â ³ âèâîä³â metal-nitride-îõide-semiconductor ñòðóêòóðà ìåòàë–í³òðèä–îêñèä–íàï³âïðîâ³äíèê, ÌÍÎÏ-ñòðóêòóðà metal-nitride-semiconductor ñòðóêòóðà ìåòàë–í³òðèä–íàï³âïðîâ³äíèê, ÌÍÍñòðóêòóðà metal-îõide-semiconductor ñòðóêòóðà ìåòàë– îêñèä–íàï³âïðîâ³äíèê, ÌÎÍ-ñòðóêòóðà (äèâ. ò-æ MOS) metal-thick nitride-semiconductor ñòðóêòóðà ìåòàë–í³òðèä–îêñèä–íàï³âïðîâ³äíèê ç òîâñòèì øàðîì í³òðèäó, ÌÍÎÍ-ñòðóêòóðà ç òîâñòèì øàðîì í³òðèäó meter: capacitance ~ ôàðàäìåòð concentration ~ âèì³ðþâà÷ êîíöåíòðàö³¿ depth ~ 1. òîâùèíîì³ð 2. ïðèëàä äëÿ âèì³ðþâàííÿ ãëèáèíè çàëÿãàííÿ ð–nïåðåõîäó exposure ~ åêñïîíîìåòð frequency ~ ÷àñòîòîì³ð humidity [moisture] ~ âîëîãîì³ð; ã³ãðîìåòð oxygen ~ ãàçîàíàë³çàòîð íà êèñåíü resistivity ~ âèì³ðþâà÷ ïèòîìîãî îïîðó roughness ~ âèì³ðþâà÷ øîðñòêîñò³ thickness ~ òîâùèíîì³ð ultrasonic bond ~ óëüòðàçâóêîâèé ïðèëàä äëÿ âèçíà÷åííÿ ì³öíîñò³ ç’ºäíàíü vacuum ~ âàêóóììåòð methacrylate: polymethyl ~ ïîë³ìåòèëìåòàêðèëàò (ðåçèñò) method ìåòîä (äèâ. ò-æ àðproach, technique) aligning ~ ìåòîä ñóì³ùåííÿ angle-lap(ping)~ ìåòîä êîñîãî øë³ôà batch ~ ãðóïîâèé (òåõíîëîã³÷íèé) ìåòîä Bridgeman-Stockbarger ~ ìåòîä Áðèäæìåíà–Ñòîêáàðãåðà
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mic computerized reliability analysis ~ àâòîìàòèçîâàíà ìåòîäèêà àíàë³çó íàä³éíîñò³ critical path ~ ìåòîä êðèòè÷íîãî øëÿõó crucibleless ~ áåçòèãåëüíèé ìåòîä CZ [Czochralski] ~ ìåòîä ×îõðàëüñüêîãî directional etch ~ ìåòîä íàïðàâëåíîãî òðàâëåííÿ double-crucible ~ ìåòîä ïîäâ³éíîãî òèãëÿ edge-based ~ ìåòîä êîíòóðíèõ ë³í³é epitaxial isolation ~ ìåòîä åï³òàêñ³àëüíî¿ ³çîëÿö³¿ event-driven ~ ìåòîä ïî䳺âîãî ìîäåëþâàííÿ ²Ñ Euler’s ~ ìåòîä äèñêðåòèçàö³¿ Åéëåðà; ìåòîä ³íòåãðàö³¿ Åéëåðà fault driven ~ ìåòîä ïðîñóâàííÿ íåñïðàâíîñòåé finite-difference ~ ìåòîä ñê³í÷åííèõ ð³çíèöü finite-element ~ ìåòîä ñê³í÷åííèõ åëåìåíò³â flip-chip ~ ìåòîä ïåðåâåðíåíîãî êðèñòàëà float(ing) -zone ~ ìåòîä ïëàâàþ÷î¿ çîíè (âèðîùóâàííÿ ³ î÷èùåííÿ ìîíîêðèñòàë³â) four(-point) probe ~ ÷îòèðüîõçîíäîâèé ìåòîä (âèì³ðþâàííÿ ïèòîìîãî îïîðó) greedy ~ ìåòîä øâèäêîãî ðåçóëüòàòó Green function ~ ìåòîä ôóíêö³é Ãð³íà hand-drafted ~ ðó÷íèé ìåòîä âèêðåñëþâàííÿ (íàïð. òîïîëî㳿) horizontal Bridgeman ~ ãîðèçîíòàëüíèé ìåòîä Áð³äæìåíà (âèðîùóâàííÿ çëèòê³â àðñåí³äó ãàë³þ) LEC [liquid encapsulated Czochralski] ~ ìåòîä ×îõðàëüñüêîãî ç îáâîë³êàííÿì ðîçïëàâó ³íåðòíîþ ð³äèíîþ low-pressure triode ~ òð³îäíèé ìåòîä ³îííîãî ðîçïèëþâàííÿ ïðè íèçüêîìó òèñêó manufacturing ~ òåõíîëîã³÷íèé ìåòîä masking ~ ìåòîä ìàñêóâàííÿ; ìàñêîâèé ìåòîä MC~ äèâ. Monte-Carlo method modified nodal analysis ~ ìîäèô³êîâàíèé ìåòîä âóçëîâèõ ïîòåíö³àë³â Monte-Carlo ~ ìåòîä Ìîíòå-Êàðëî noncontact ~ áåçêîíòàêòíèé ìåòîä over-under probe ~ ìåòîä çóñòð³÷íèõ çîíä³â photolithography ~ ìåòîä ôîòîë³òîãðàô³¿ photomasking ~ ìåòîä ôîòîìàñêóâàííÿ; ìåòîä ôîòîë³òîãðàô³¿ scan direct àñcess ~ ìåòîä ñêàíóâàííÿ ç áåçïîñåðåäí³ì äîñòóïîì
scan-path ~ ìåòîä ëîêàëüíîãî ñêàíóâàííÿ screening ~ 1. ìåòîä òðàôàðåòíîãî äðóêó 2. ìåòîä åêðàíóâàííÿ self-aligning ~ (òåõíîëîã³÷íèé) ìåòîä ñàìîñóì³ùåííÿ; ìåòîä (âèãîòîâëåííÿ) ÌÎÍ ²Ñ ç ñàìîñóì³ùåíèìè çàòâîðàìè silicon compiler ~ ìåòîä ïðîåêòóâàííÿ (ñïåö³àë³çîâàíèõ ²Ñ) ç âèêîðèñòàííÿì êðåìí³ºâîãî êîìï³ëÿòîðà single-mask ~ ìåòîä âèãîòîâëåííÿ ïðèëàäó ³ç çàñòîñóâàííÿì îäíîãî ôîòîøàáëîíó standard-ñåll ~ ìåòîä ïðîåêòóâàííÿ íà îñíîâ³ ñòàíäàðòíèõ êîì³ðîê standing-wave ~ ìåòîä ðåíòãåí³âñüêèõ ñòîÿ÷èõ õâèëü (äëÿ âèçíà÷åííÿ õàðàêòåðèñòèê ìîëåêóëÿðíî¿ ïë³âêè) state variable ~ ìåòîä çì³ííèõ ñòàí³â (ïðè ïîáóäîâ³ ìàòåìàòè÷íèõ ìîäåëåé Â²Ñ íà ð³çíèõ ð³âíÿõ ïðåäñòàâëåííÿ) step-and-repeat multilens ~ ìåòîä ìóëüòèïë³êàö³¿ çîáðàæåíü ç âèêîðèñòàííÿì áàãàòîë³íçîâîãî ôîòîïîâòîðþâà÷à step-and-repeat multiple-pinhole ~ ìåòîä ïîñë³äîâíî¿ êðîêîâî¿ ìóëüòèïë³êàö³¿ çîáðàæåíü ç âèêîðèñòàííÿì îïòè÷íî¿ ñèñòåìè ç âåëèêèì ÷èñëîì îòâîð³â symbolic layout ~ ìåòîä ñèìâîë³÷íîãî ïðîåêòóâàííÿ òîïîëî㳿 weak beam ~ ìåòîä ñëàáêèõ ïó÷ê³â wire ~ ìåòîä äðîòÿíîãî ìîíòàæó wire-wrap ~ ìåòîä íàêðóòêè methodology: design ~ ìåòîäîëîã³ÿ ïðîåêòóâàííÿ digital control ~ ìåòîä öèôðîâîãî óïðàâë³ííÿ; ìåòîä ãåíåðàö³¿ ³ ðîçïîä³ëó ³ìïóëüñíèõ êåð³âíèê³â ñèãíàë³â (ùî âèêîðèñòîâóºòüñÿ ïðè ïðîåêòóâàíí³ ²Ñ) flat design ~ çàãàëüíà ìåòîäîëîã³ÿ ïðîåêòóâàííÿ hierarchical design ~ ³ºðàðõ³÷íà ìåòîäîëîã³ÿ ïðîåêòóâàííÿ metrics ìåòðèêà metrology: electron-beam ~ 1. åëåêòðîííî-ïðîìåíåâà ìåòðîëîã³ÿ 2. åëåêòðîííî-ïðîìåíåâà êîíòðîëüíî-âèì³ðþâàëüíà àïàðàòóðà micro 1. ì³êðîïðîöåñîð 2. ì³êðîÅÎÌ large-scale integration ~ ì³êðîïðîöåñîðíà ²Ñ
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mic metal-îõide-semiconductor ì³êðîïðîöåñîð ç ÌÎÍ-ñòðóêòóðîþ, ÌÎÍ-ì³êðîïðîöåñîð microcoded [microprogrammed] ~ ì³êðîïðîöå ñîð ç ì³êðîïðîãðàìíèì óïðàâë³ííÿì sapphire ~ ì³êðîïðîöåñîð ³ç ñòðóêòóðîþ òèïó «êðåìí³é íà ñàïô³ð³», ì³êðîïðîöåñîð ç ÊÍÑ-ñòðóêòóðîþ microanalysis: optical ~ îïòè÷íèé ì³êðîàíàë³ç scanning Auger ~ ñêàíóþ÷èé îæåì³êðîàíàë³ç X-ray ~ ðåíòãåí³âñüêèé ì³êðîàíàë³ç microassembly ì³êðîçá³ðêà hybrid ~ ã³áðèäíà ì³êðîçá³ðêà microbalance: quartz crystal ~ êâàðöîâ³ ì³êðîòåðåçè microbridge: air-gap ~ ì³êðîì³ñòîê ç ïîâ³òðÿíèì çàçîðîì Josephson ~ ì³êðîì³ñòîê íà ïåðåõîä³ Äæîçåôñîíà superconducting ~ íàäïðîâ³äíèé ì³êðîì³ñòîê microchip 1. ì³êðîêðèñòàë, ì³êðî÷³ï 2. ì³êðîïðîöåñîð 3. ì³êðîÅÎÌ microcircuit ì³êðîñõåìà; ³íòåãðàëüíà ñõåìà, ²Ñ (äèâ. ò-æ chip, circuit, integration) ceramic-based ~ ì³êðîñõåìà íà êåðàì³÷í³é ï³äêëàäö³ custom-designed ~ çàìîâëåíà ì³êðîñõåìà hybrid ~ ã³áðèäíà ²Ñ, Ã²Ñ monolithic ~ ìîíîë³òíà ì³êðîñõåìà; íàï³âïðîâ³äíèêîâà ì³êðîñõåìà multilayer hybrid ~ áàãàòîøàðîâà Ã²Ñ packageless integrated ~ áåçêîðïóñíà ²Ñ proprietary ~ ì³êðîñõåìà âëàñíî¿ ðîçðîáêè semiconductor integrated ~ íàï³âïðîâ³äíèêîâà ²Ñ superconducting ~ íàäïðîâ³äíèêîâà ì³êðîñõåìà thick-film hybrid ~ òîâñòîïë³âêîâà Ã²Ñ thin-film hybrid ~ òîíêîïë³âêîâà Ã²Ñ microcircuitry ì³êðîñõåìè; ³íòåãðàëüí³ ñõåìè microcoding ì³êðîïðîãðàìóâàííÿ microcomponent ì³êðîêîìïîíåíò microcomputer ì³êðîÅÎÌ complementary MOS ~ ì³êðîÅÎÌ ç ÊÌÎÍ-ñòðóêòóðîþ industrial ~ ì³êðîÅÎÌ äëÿ óïðàâë³ííÿ âèðîáíèöòâîì
large-scale integration ~ Â²Ñ ì³êðîÅÎÌ mask-programmed ~ ì³êðîÅÎÌ, ïðîãðàìîâàíà øàáëîíîì one-board ~ îäíîïëàòíà ì³êðîÅÎÌ one-chip ~ îäíîêðèñòàëüíà ì³êðîÅÎÌ prepackaged ~ ì³êðîÅÎÌ â ìîäóëüíîìó âèêîíàíí³ software-driven ~ ì³êðîÅÎÌ ç ïðîãðàìíèì óïðàâë³ííÿì microcontroller ì³êðîêîíòðîëåð microcrack ì³êðîòð³ùèíà microdefect ì³êðîäåôåêò bulk ~ îá’ºìíèé ì³êðîäåôåêò microdiagnostics ì³êðîä³àãíîñòèêà microelectronics 1. ì³êðîåëåêòðîí³êà 2. ³íòåãðàëüí³ ñõåìè; ì³êðîåëåêòðîíí³ ïðèëàäè functional ~ ôóíêö³îíàëüíà ì³êðîåëåêòðîí³êà hardened ~ ðàä³àö³éíî-ñò³éê³ ³íòåãðàëüí³ ñõåìè hybrid ~ 1. ã³áðèäíà ì³êðîåëåêòðîí³êà 2. ã³áðèäí³ ³íòåãðàëüí³ ñõåìè integrated ~ 1. ³íòåãðàëüíà ì³êðîåëåêòðîí³êà 2. ³íòåãðàëüí³ ñõåìè solid-state ~ òâåðäîò³ëüíà ì³êðîåëåêòðîí³êà; íàï³âïðîâ³äíèêîâà ì³êðîåëåêòðîí³êà superconducting ~ 1. íàäïðîâ³äíà ì³êðîåëåêòðîí³êà 2. íàäïðîâ³äíèêîâ³ ³íòåãðàëüí³ ñõåìè vacuum ~ 1. (åëåêòðî)âàêóóìíà ì³êðîåëåêòðîí³êà 2. (åëåêòðî)âàêóóìí³ ³íòåãðàëüí³ ñõåìè microelement ì³êðîêîìïîíåíò; ì³êðîåëåìåíò microengine ì³êðîÅÎÌ; ì³êðîïðîöåñîð microetching ì³êðîòðàâëåííÿ microexpert ì³êðîåêñïåðò, åêñïåðòíà ñèñòåìà íà ³íòåãðàëüí³é ñõåì³ microfabrication ì³êðîòåõíîëîã³ÿ; ì³êðîîáðîáêà electron-beam ~ åëåêòðîííî-ïðîìåíåâà ì³êðîòåõíîëîã³ÿ very large-scale integration ~ ì³êðîòåõíîëîã³ÿ äëÿ âèãîòîâëåííÿ ÍÂ²Ñ microfabricator óñòàíîâêà äëÿ ì³êðîîáðîáêè; òåõíîëîã³÷íå óñòàòêóâàííÿ äëÿ ì³êðîîáðîáêè microflow ì³êðîòð³ùèíà micrograph ì³êðîôîòîãðàô³ÿ, ì³êðîôîòîçí³ìîê; ì³êðîçîáðàæåííÿ
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mic optical ~ ì³êðîôîòîãðàô³ÿ, îäåðæàíà çà äîïîìîãîþ îïòè÷íîãî ì³êðîñêîïà; ì³êðîçîáðàæåííÿ â îïòè÷íîìó ì³êðîñêîï³ scanning electron ~ ì³êðîôîòîãðàô³ÿ, îäåðæàíà çà äîïîìîãîþ ðàñòðîâîãî åëåêòðîííîãî ì³êðîñêîïà; ì³êðîçîáðàæåííÿ â ðàñòðîâîìó åëåêòðîííîìó ì³êðîñêîï³ transmission electron ~ ì³êðîôîòîãðàô³ÿ, îäåðæàíà çà äîïîìîãîþ åëåêòðîííîãî ì³êðîñêîïà, ùî ïðîñâ³÷óº; ì³êðîçîáðàæåííÿ â åëåêòðîííîìó ïðîñâ³÷óþ÷îìó ì³êðîñêîï³ micrography 1. ì³êðîñêîï³ÿ 2. ì³êðîô³ëüìóâàííÿ microinterconnection ì³æç’ºäíàííÿ â ³íòåãðàëüíèõ ñõåìàõ microinterferometer ì³êðî³íòåðôåðîìåòð (äëÿ âèì³ðþâàííÿ òîâùèíè òîíêèõ ïë³âîê) Microlin «Ì³êðîë³í» (íàçâà ñå𳿠ë³í³éíèõ ²Ñ) microlithography ì³êðîë³òîãðàô³ÿ (äèâ. ò-æ lithography) micrologic ì³êðîëîã³êà (äèâ. ò-æ logic) micromachining ì³êðîîáðîáêà (äèâ. ò-æ machining) micromanipulalor ì³êðîìàí³ïóëÿòîð air-float ~ ì³êðîìàí³ïóëÿòîð íà ïîâ³òðÿí³é ïîäóøö³ microminiaturization ì³êðîì³í³àòþðèçàö³ÿ micromodule ì³êðîìîäóëü Micronor «Ì³êðîí³ð» (íàçâà ñå𳿠öèôðîâèõ ²Ñ) microoptoelectronics 1. ì³êðîîïòîåëåêòðîí³êà 2. îïòîêëåêòðîíí³ ³íòåãðàëüí³ ñõåìè micropack(age) ì³êðîêîðïóñ (íàïð. äëÿ ²Ñ íà ïë³âêîâîìó íîñ³¿) micropattern 1. ì³êðîìàëþíîê; ì³êðîðåëüºô | ôîðìóâàòè ì³êðîìàëþíîê; ôîðìóâàòè ì³êðîðåëüºô 2. ì³êðîñòðóêòóðà (íàïð. íà ôîòîøàáëîí³) (äèâ. ò-æ pattern) | ì³êðîñòðóêòóðóâàòè microphotometer ì³êðîôîòîìåòð³ÿ microplacer óñòàíîâêà äëÿ ìîíòàæó êðèñòàë³â microplating âèá³ðêîâå åëåêòðîë³òè÷íå îñàäæåííÿ (íàïð. çîëîòî íà ïîâåðõí³ êîíòàêò³â) micropositioner (ì³êðî) ïîçèö³îíóþ÷èé ïðèñòð³é microprinter óñòàíîâêà äëÿ òðàôàðåòíîãî äðóêó microprobe ì³êðîçîíä (äèâ. ò-æ probe) Auger ~ ì³êðîçîíä Îæå
electron ~ åëåêòðîííèé ì³êðîçîíä ion ~ ³îííèé ì³êðîçîíä; ³îííèé ì³êðîàíàë³çàòîð laser ~ ëàçåðíèé ì³êðîçîíä microprocessing 1. îáðîáêà ³íôîðìàö³¿ çà äîïîìîãîþ ì³êðîïðîöåñîð³â 2. ì³êðîîáðîáêà laser(-beam)~ ëàçåðíà ì³êðîîáðîáêà microprocessor ì³êðîïðîöåñîð (äèâ. ò-æ processor) bit-slice ~ ñåêö³îíîâàíèé ì³êðîïðîöåñîð catalogue ~ ñòàíäàðòíèé ì³êðîïðîöåñîð CMOS-on-sapphire ~ ÊÌÎÍì³êðîïðîöåñîð ç ÊÍÑ-ñòðóêòóðîþ complementary MOS ~ ì³êðîïðîöåñîð ç êîìïëåìåíòàðíîþ ÌÎÍ-ñòðóêòóðîþ, ÊÌÎÍ-ì³êðîïðîöåñîð core ~ âáóäîâàíèé ì³êðîïðîöåñîð (â íàï³âçàìîâëåí³é ͲÑ) custom-designed ~ çàìîâëåíèé ì³êðîïðîöåñîð dedicated ~ ñïåö³àë³çîâàíèé ì³êðîïðîöåñîð emitter-coupled logic ~ ì³êðîïðîöåñîð íà ÅÇË, ÅÇË-ì³êðîïðîöåñîð functional partitioning ~ (ñåêö³îíîâàíèé) ì³êðîïðîöåñîð ç ôóíêö³îíàëüíèì ðîçáèòòÿì high-end ~ âèñîêîÿê³ñíèé ì³êðîïðîöåñîð (ç ðîçðÿäí³ñòþ âèùå 8 á³ò) Josephson ~ ì³êðîïðîöåñîð íà ïåðåõîäàõ Äæîçåôñîíà low-end ~ ì³êðîïðîöåñîð øèðîêîãî çàñòîñóâàííÿ (4- ³ 8-ðîçðÿäí³) mid-range ~ ì³êðîïðîöåñîð ç ñåðåäí³ìè õàðàêòåðèñòèêàìè (ñòîñîâíî 8-ðîçðÿäíèõ ì³êðîïðîöåñîð³â) multichip ~ áàãàòîêðèñòàëüíèé ì³êðîïðîöåñîð; Ã²Ñ ì³êðîïðîöåñîðà one-chip ~ îäíîêðèñòàëüíèé ì³êðîïðîöåñîð printed-circuit board ~ ì³êðîïðîöåñîð íà äðóêîâàí³é ïëàò³ single-chip ~ îäíîêðèñòàëüíèé ì³êðîïðîöåñîð slice ~ ñåêö³îíîâàíèé ì³êðîïðîöåñîð very low-end ~ ì³êðîïðîöåñîð øèðîêîãî çàñòîñóâàííÿ (4-ðîçðÿäíèé ì³êðîïðîöåñîð) microprocessor-based íà îñíîâ³ ì³êðîïðîöåñîðà; ç ì³êðîïðîöåñîðíèì óïðàâë³ííÿì microprogramming ì³êðîïðîãðàìóâàííÿ
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Min microresistor ì³êðîðåçèñòîð microscope: field ion ~ ³îííî-ïîëüîâèé ì³êðîñêîï infrared ~ ³íôðà÷åðâîíèé [²×-] ì³êðîñêîï inspection ~ ì³êðîñêîï äëÿ â³çóàëüíîãî êîíòðîëþ laser àñoustic ~ ëàçåðíèé àêóñòè÷íèé ì³êðîñêîï laser scanning ~ ëàçåðíèé ðàñòðîâèé ì³êðîñêîï light-sectioning ~ ì³êðîñêîï ç ðîçùåïëåíèì ïðîìåíåì (äëÿ âèì³ðþâàííÿ òîâùèíè ïë³âîê) metallographical ~ ì³êðîñêîï ìåòàëîãðàô³¿ optoacoustic ~ îïòîàêóñòè÷íèé ì³êðîñêîï photo-thermal-radiation ~ ôîòîòåðìîðàä³àö³éíèé ì³êðîñêîï scanning-electron ~ ðàñòðîâèé åëåêòðîííèé ì³êðîñêîï scanning tunneling ~ ðàñòðîâèé òóíåëüíèé ì³êðîñêîï split-field ~ ì³êðîñêîï ç ðîçùåïëåíèì ïîëåì transmission electron ~ ïðîñâ³÷óþ÷èé [òðàíñì³ñ³éíèé] åëåêòðîííèé ì³êðîñêîï tunnel ~ òóíåëüíèé ì³êðîñêîï wafer inspection ~ ì³êðîñêîï äëÿ îïòè÷íîãî êîíòðîëþ ñòðóêòóð íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ microscopy ì³êðîñêîï³ÿ acoustic ~ àêóñòè÷íà ì³êðîñêîï³ÿ analytical electron ~ àíàë³òè÷íà åëåêòðîííà ì³êðîñêîï³ÿ atomic resolution ~ ì³êðîñêîï³ÿ àòîìíîãî äîçâîëó Auger ~ îæå-ì³êðîñêîï³ÿ ballistic electron emission ~ áàë³ñòè÷íà åëåêòðîííà åì³ñ³éíà ì³êðîñêîï³ÿ high-retolution electron ~ åëåêòðîííà ì³êðîñêîï³ÿ âèñîêîãî ðîçøèðåííÿ high-resolution transmission electron ~ åëåêòðîííà ïðîñâ³÷óþ÷à ì³êðîñêîï³ÿ âèñîêîãî ðîçøèðåííÿ [òðàíñì³ñ³éíà] high-voltage electron ~ âèñîêîâîëüòíà åëåêòðîííà ì³êðîñêîï³ÿ optical ~ îïòè÷íà ì³êðîñêîï³ÿ scanning àñoustic ~ ñêàíóþ÷à àêóñòè÷íà ì³êðîñêîï³ÿ scanning Auger ~ ñêàíóþ÷à îæå-ì³êðîñêîï³ÿ scanning ion ~ ³îííà ì³êðîñêîï³ÿ ç ñêàíóâàííÿì (ïî ïîâåðõí³ îá’ºêòó)
scanning transmission electron ~ ñêàíóþ÷à ïðîñâ³÷óþ÷à åëåêòðîííà ì³êðîñêîï³ÿ scanning tunnel ~ ñêàíóþ÷à òóíåëüíà ì³êðîñêîï³ÿ transmission electron ~ åëåêòðîííà ïðîñâ³÷óþ÷à ì³êðîñêîï³ÿ [òðàíñì³ñ³éíà] weak-beam, ~ ì³êðîñêîï³ÿ â ñëàáêèõ ïó÷êàõ microscribing ì³êðîñêðàéáóâàííÿ; ïðåöèç³éíå ñêðàéáóâàííÿ microsection ì³êðîøë³ô microshaving âèäàëåííÿ [çíÿòòÿ] ìåòàë³çàö³¿; âèäàëåííÿ òîíêèõ ïë³âîê microsoft 1. ñîðòóþ÷èé ïðèñòð³é [ñîðòóâàëüíèê] íàï³âïðîâ³äíèêîâèõ ïëàñòèí 2. êëàñèô³êàòîð íàï³âïðîâ³äíèêîâèõ ïëàñòèí microstructure ì³êðîñòðóêòóðà transistor ~ ì³êðîñòðóêòóðà òðàíçèñòîðà microtronics ì³êðîåëåêòðîí³êà microlwin ì³êðîäâ³éíèê (äåôåêò ðîñòó êðèñòàë³÷íî¿ ðå÷îâèíè) migration ì³ãðàö³ÿ acceptor ~ ì³ãðàö³ÿ àêöåïòîð³â avalanche-induced ~ ëàâèííî-³íäóêîâàíà ì³ãðàö³ÿ carrier ~ ì³ãðàö³ÿ íîñ³¿â grain-boundary ~ ì³ãðàö³ÿ ì³æçåðíîâèõ ìåæ hole ~ ì³ãðàö³ÿ ä³ðîê mill 1. ôðåçà | ôðåçåðóâàòè 2. äðîáàðêà; ìëèí | äðîáèòè, ìîëîòè ball ~ êóëüîâèé ìëèí milter 1. ôðåçåðíèé âåðñòàò 2. äðîáàðêà; ìëèí ion ~ óñòàíîâêà ³îííîãî ôðåçåðóâàííÿ; óñòàíîâêà ³îííîãî òðàâëåííÿ milling 1. ôðåçåðóâàííÿ 2. äðîáëåííÿ; ïîìåë chemical ~ õ³ì³÷íå ôðåçåðóâàííÿ; õ³ì³÷íå òðàâëåííÿ ion(-beam)~ ³îííå ôðåçåðóâàííÿ; ³îííå òðàâëåííÿ reactive ion ~ ðåàêòèâíå ³îííå òðàâëåííÿ miniaturization ì³í³àòþðèçàö³ÿ electronic ~ ì³í³àòþðèçàö³ÿ åëåêòðîííî¿ àïàðàòóðè minicomputer ì³í³-ÅÎÌ large-scale integration ~ ì³í³-ÅÎÌ íà Â²Ñ minimizer: PLA ~ ì³í³ì³çàòîð ëîã³÷íèõ ôóíêö³é â ñåðåäîâèù³ ÏËÌ Minipak ô³ðì. ñïåö³àë³çîâàíèé
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mod ñêëîåïîêñèäíèé êâàäðàòíèé êîðïóñ ³ç full-scale ~ ìàêåò ó íàòóðàëüíó âåëè÷èíó ñòîâï÷èêîâèìè âèâîäàìè (ÑØÀ) integrated-circuit ~ ìàêåò ²Ñ miniprober ì³í³àòþðíà çîíäîâà mode 1. ìåòîä; ñïîñ³á (äèâ. ò-æ àðproach, âèì³ðþâàëüíà óñòàíîâêà method, technique) 2. ðåæèì (ðîáîòè) 3. òèï, mini-tile ñòàíäàðòíèé åëåìåíò; êîì³ðêà (â âèãëÿä; ôîðìà á³áë³îòåö³ ñòàíäàðòíèõ åëåìåíò³â ³ êîì³ðîê) automatic ~ àâòîìàòè÷íèé ðåæèì mirror: avalanche ~ ëàâèííèé ðåæèì complementary current ~s êîìïëåìåíòàðí³ charge-storage ~ ðåæèì íàêîïè÷åííÿ çàðÿäó ñòðóìîâ³ äçåðêàëà continuous(-wave) ~ áåçïåðåðâíèé ðåæèì current ~ ñòðóìîâå äçåðêàëî current-page addressing ~ ñïîñ³á àäðåñàö³¿ (ôóíêö³îíàëüíèé åëåìåíò àáî äæåðåëî ç âèêîðèñòàííÿì ïîòî÷íî¿ ñòîð³íêè (â æèâëåííÿ) ÑÀÏÐ) mirroring äçåðêàëüíå ðîçòàøóâàííÿ (ô³çè÷íà depletion ~ ðåæèì çá³äíåííÿ îð³ºíòàö³ÿ ÷àñòèíè êîì³ðîê ²Ñ, ÿêà enhancement ~ ðåæèì çáàãà÷åííÿ äçåðêàëüíî ïîâòîðþº ³íøó ÷àñòèíó êîì³ðîê failure ~ âèä â³äìîâè äëÿ çðó÷íîñò³ ³ ïðîâåäåííÿ ç’ºäíàíü ³ øèí fault behavioral ~ îñîáëèâ³ñòü ïðîÿâó æèâëåííÿ) íåñïðàâíîñò³ Â²Ñ misalignment íåòî÷íå ñóì³ùåííÿ; Gunn ~ ãàíí³âñáêèé ðåæèì ðîçîð³ºíòàö³ÿ hunt ~ ðåæèì àêòèâíîãî î÷³êóâàííÿ (â mismatch: ïðîöåñîðíèõ ²Ñ) cell ~ âåëè÷èíà ðîçêèäó ïàðàìåòð³â limited space-charge àñcumulation ~ ðåæèì åëåìåíò³â ïàì’ÿò³ ç îáìåæåíèì íàêîïè÷åííÿì îá’ºìíîãî thermal expansion ~ â³äì³íí³ñòü â çàðÿäó êîåô³ö³ºíòàõ òåìïåðàòóðíîãî ðîçøèðåííÿ magnetostatic ~ ìàãí³òîñòàòè÷íà ìîäà mismatching: manual ~ ðó÷íèé ðåæèì lattice ~ ðîçóçãîäæåííÿ ïàðàìåòð³â maximum delay simulation ~ ðåæèì [ïîñò³éíèõ] ãðàòîê ³ì³òàö³éíîãî ìîäåëþâàííÿ ç mix: ìàêñèìàëüíèìè çàòðèìêàìè product ~ íîìåíêëàòóðà (ùî âèïóñêàþòüñÿ) media delay simulation ~ ðåæèì âèðîá³â ³ì³òàö³éíîãî ìîäåëþâàííÿ ç íîì³íàëüíèìè mixing: çàòðèìêàìè CW laser ~ ïåðåì³øóâàííÿ (íàïð. åëåìåíò³â minimal delay simulation ~ ðåæèì â áàãàòîøàðîâ³é ñòðóêòóð³) çà äîïîìîãîþ ³ì³òàö³éíîãî ìîäåëþâàííÿ ç ì³í³ìàëüíèìè áåçïåðåðâíîãî ëàçåðíîãî âèïðîì³íþâàííÿ çàòðèìêàìè mixture ñóì³ø nonsaturated ~ íåíàñè÷åíèé ðåæèì etching gas ~ ñóì³ø äëÿ ãàçîâîãî òðàâëåííÿ off-line ~ 1. àâòîíîìíèé ñïîñ³á åêñïëóàòàö³¿ homogeneous ~ ãîìîãåííà [îäíîð³äíà] (íàïð. óñòàòêóâàííÿrm:) 2. àâòîíîìíèé ñóì³ø ðåæèì mobility ðóõëèâ³ñòü on-line ~ 1. íåàâòîíîìíèé ñïîñ³á bulk ~ îá’ºìíà ðóõëèâ³ñòü åêñïëóàòàö³¿ (íàïð. óñòàòêóâàííÿ) 2. carrier ~ ðóõëèâ³ñòü íîñ³¿â íåàâòîíîìíèé ðåæèì diffusion ~ äèôóç³éíà ðóõëèâ³ñòü open loop ~ ðåæèì ïåðåâ³ðêè drift ~ äðåéôîâà ðóõëèâ³ñòü ì³êðîïðîöåñîðà ç ðîçðèâîì çâ’ÿçêè ì³æ electron ~ ðóõëèâ³ñòü åëåêòðîí³â ïðîöåñîðîì ³ ïàì’ÿòòþ Hall ~ õîëë³âñüêà ðóõëèâ³ñòü operation(al) ~ ðåæèì ðîáîòè hole ~ ðóõëèâ³ñòü ä³ðîê oscillating ~ ðåæèì ãåíåðàö³¿ impurity ~ äîì³øêîâà ðóõëèâ³ñòü pipeline ~ ðåæèì êîíâåéºðíî¿ îáðîáêè äàíèõ intrinsic ~ âëàñíà ðóõëèâ³ñòü propagation ~ âèä ðîçïîâñþäæåííÿ (íàïð. vacancy ~ ðóõëèâ³ñòü âàêàíñ³é êîëèâàíü) mockup ìàêåò; ìîäåëü
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mod pulse(d)~ ³ìïóëüñíèé ðåæèì punch-through ~ ðåæèì ïðîêîëó áàçè (ïîëüîâîãî òðàíçèñòîðà) saturation ~ ðåæèì íàñè÷åííÿ simulation ~ ðåæèì ³ì³òàö³éíîãî ìîäåëþâàííÿ stand-alone ~ àâòîíîìíèé ðåæèì óñòàòêóâàííÿ standby ~ ðåæèì ç ðåçåðâóâàííÿì; ðåæèì çáåð³ãàííÿ (êîì³ðêè ÇÏ) storage ~ ðåæèì çáåð³ãàííÿ; ðåæèì íàêîïè÷åííÿ stroboscopic ~ ñòðîáîñêîï³÷íèé ðåæèì test ~ òåñòîâèé ðåæèì transfer ~ ðåæèì ïåðåäà÷³ (³íôîðìàö³éíîãî) çàðÿäó (â ÏÇÇ) transient ~ ïåðåõ³äíî¿ ðåæèì vertical integration ~ ïðèíöèï âåðòèêàëüíî¿ ³íòåãðàö³¿ 3 points alignment ~ ìåòîä ñóì³ùåííÿ ïî òðüîõ òî÷êàõ model ìîäåëü; çðàçîê | ìîäåëþâàòè ambiguity ~ ìîäåëü íåîäíîçíà÷íî¿ çàòðèìêè (äîçâîëÿº âèçíà÷èòè ì³í³ìàëüíó ³ ìàêñèìàëüíó çàòðèìêó ïîøèðåííÿ ñèãíàëó ÷åðåç åëåìåíò) architectural ~ àðõ³òåêòóðíà ìîäåëü band ~ çîííà ìîäåëü behavioral ~ ïîâåä³íêîâà ìîäåëü breadboard ~ ìàêåò cyclic queue ~ öèêë³÷íà ìîäåëü ÷åðãè DD [drift-diffusion] ~ äðåéôîâî-äèôóç³éíà ìîäåëü Ebers-Moll [EÌ] ~ (ìàòåìàòè÷íà) ìîäåëü Åáåðñà–Ìîëëà fault-effect ~ ìîäåëü ïðîÿâó íåñïðàâíîñò³ functional ~ ôóíêö³îíàëüíà ìîäåëü gate ~ 1. ìîäåëü ëîã³÷íîãî åëåìåíòó 2. ìîäåëü íà ð³âí³ ëîã³÷íèõ åëåìåíò³â generic ~ õàðàêòåðíèé [çàãàëüíèé] ìîäóëü KP [Kronig-Penney] ~ ìîäåëü Êðîí³ãà– Ïåíí³ layout ~ ìîäåëü òîïîëî㳿 life-cycle management ~ ìîäåëü óïðàâë³ííÿ ñèñòåìîþ âïðîäîâæ âñüîãî òåðì³íó ñëóæáè numerical ~ ÷èñåëüíà ìîäåëü pilot ~ åêñïåðèìåíòàëüíà ìîäåëü; äîñë³äíèé çðàçîê production ~ ïðîìèñëîâà ìîäåëü
program analysis and evaluation ~ ìîäåëü àíàë³çó ³ îö³íêè ïðîãðàìè simplified transistor ~ ñïðîùåíà ìîäåëþþ÷à ñõåìà òðàíçèñòîðà simulation ~ ³ì³òàö³éíà ìîäåëü transistor ~ 1. ìîäåëþþ÷à ñõåìà òðàíçèñòîðà 2. ìîäåëü íà ð³âí³ òðàíçèñòîð³â modeling: mask pattern ~ ìîäåëþâàííÿ (²Ñ) íà ìàñêîâîìó ð³âí³ Monte-Carlo ~ ìîäåëþâàííÿ ìåòîäîì Ìîíòå-Êàðëî multidimensional ~ áàãàòîâèì³ðíå ìîäåëþâàííÿ numerical ~ ÷èñåëüíå ìîäåëþâàííÿ quasi-multidimensional ~ êâàç³áàãàòîâèì³ðíå ìîäåëþâàííÿ resist ~ ôîðìóâàííÿ ìàëþíêà â øàð³ ðåçèñòà; ñòâîðåííÿ ðåëüºôó â øàð³ ðåçèñòà two-dimensional ~ äâîâèì³ðíå ìîäåëþâàííÿ modem ìîäåì, ìîäóëÿòîð–äåìîäóëÿòîð large-scale ~ Â²Ñ ìîäåìó microprocessor ~ ì³êðîïðîöåñîðíèé ìîäåì, ìîäåì ç ì³êðîïðîöåñîðîì two-chip ~ äâîõêðèñòàëüíèé ìîäåì modification: surface ~ çì³íà âëàñòèâîñòåé ïîâåðõí³ (ï³äêëàäêè) modifier 1. (ëåãóþ÷à) äîì³øêà, ùî âèçíà÷ຠòèï åëåêòðîïðîâ³äíîñò³ íàï³âïðîâ³äíèêà 2. ìîäèô³êàòîð viscosity ~ ìîäèô³êàòîð â’ÿçêîñò³, äîáàâêà, ÿêà çì³íþº â’ÿçê³ñòü modularity ìîäóëüíèé ïðèíöèï (êîíñòðóþâàííÿ àïàðàòóðè) functional ~ ôóíêö³îíàëüíèé ìîäóëüíèé ïðèíöèï modularization ðîç÷ëåíîâóâàííÿ [ðîçáèòòÿ] íà ìîäóë³, ìîäóëÿðèçàö³ÿ (íàïð. ïðè êîíñòðóþâàíí³ àïàðàòóðè) modulation ìîäóëÿö³ÿ amplitude ~ àìïë³òóäíà ìîäóëÿö³ÿ, AM base-thickness [base-width] ~ ìîäóëÿö³ÿ øèðèíè áàçè, ìîäóëÿö³ÿ áàçè ïî øèðèí³ channel-length ~ ìîäóëÿö³ÿ äîâæèíè êàíàëó, ìîäóëÿö³ÿ êàíàëó ïî äîâæèí³ conductivity ~ ìîäóëÿö³ÿ ïèòîìî¿ ïðîâ³äíîñò³ delta ~ äåëüòà-ìîäóëÿö³ÿ
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mon frequency ~ ÷àñòîòíà ìîäóëÿö³ÿ, ×Ì Hall-effect ~ õîëë³âñüêà ìîäóëÿö³ÿ, ìîäóëÿö³ÿ çà äîïîìîãîþ åôåêòó Õîëëà phase ~ ôàçîâà ìîäóëÿö³ÿ, ÔÌ pulse ~ ³ìïóëüñíà ìîäóëÿö³ÿ, ²Ì pulse-amplitude ~ àìïë³òóäíî-³ìïóëüñíà ìîäóëÿö³ÿ, À²Ì pulse-code ~ ³ìïóëüñíî-êîäîâà ìîäóëÿö³ÿ, ²ÊÌ pulse-frequency ~ ÷àñòîòíî-³ìïóëüñíà ìîäóëÿö³ÿ, ×²Ì modulator ìîäóëÿòîð superconductive ~ íàäïðîâ³äíèêîâèé ìîäóëÿòîð module ìîäóëü bake ~ ìîäóëüíà óñòàíîâêà [ìîäóëü] â³äïàëó (íàïð. íàï³âïðîâ³äíèêîâèõ ïëàñòèí) basic building-block ~ áàçîâèé êîíñòðóêòèâíèé ìîäóëü (íàçâà ñå𳿠ÁòÑ) bubble ~ ìîäóëü ïðèñòðîþ íà ÖÌÄ bulk data interface ~ áëîê ³íòåðôåéñó äëÿ ñèñòåì, îáðîáëþâàëüíèõ âåëèê³ ìàñèâè äàíèõ (â ÑÀÏР²Ñ) desoldering vacuum ~ ìîäóëüíà óñòàíîâêà äëÿ âèäàëåííÿ ïðèïîþ ìåòîäîì â³äñìîêòóâàííÿ developing ~ ïðîÿâëþâàëüíèé ìîäóëü fab(rication)~ âèðîáíè÷èé ìîäóëü (íàïð. êîðïóñ ì³êðîåëåêòðîííîãî çàâîäó, ùî ñêëàäàºòüñÿ ç äåê³ëüêîõ êîðïóñ³â) furnace ~ ìîäóëü (äèôóç³éíî¿) ïå÷³ hardening ~ ìîäóëü äëÿ çàäóáëåííÿ (ôîòîðåçèñòà) hybrid ~ âåëèêà òÑ, ÁÃ²Ñ integrated-circuit ~ ìîäóëü íà ²Ñ, ³íòåãðàëüíèé ìîäóëü microcircuit ~ ìîäóëü íà ì³êðîñõåìàõ; ìîäóëü íà ²Ñ, ³íòåãðàëüíèé ìîäóëü microcomputer ~ ÂÃ²Ñ ì³êðîÅÎÌ multichip ~ âåëèêà òÑ, ÂÃ²Ñ multifunction ~ áàãàòîôóíêö³îíàëüíèé ìîäóëü process validation ~ ìîäóëü äëÿ ïåðåâ³ðêè ÿêîñò³ ïðîöåñó remote control ~ ìîäóëü äèñòàíö³éíîãî êåðóâàííÿ self-checking computer ~ ìîäóëü ç ñàìîä³àãíîñòèêîþ äëÿ ÅÎÌ self-timed ~ ìîäóëü ç ñàìîñèíõðîí³çàö³ºþ space ~ ïðîñòîðîâèé ìîäóëü
wafer handling ~ òðàíñïîðòíèé ìîäóëü äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí moisture-proof âîëîãîíåïðîíèêíèé mold 1. ïðåñ-ôîðìà | ïðåñóâàòè, ôîðìóâàòè 2. pl äîì³øêè ó âîä³ cavity ~ ïðåñ-ôîðìà compression ~ ïðåñ-ôîðìà äëÿ ïðÿìîãî ïðåñóâàííÿ encapsulation ~ ïðåñ-ôîðìà äëÿ âèãîòîâëåííÿ ïëàñòìàñîâèõ êîðïóñ³â transfer ~ ëèòòüîâà ïðåñ-ôîðìà molder ïðåñ injection ~ ïðåñ äëÿ ëèòòÿ ï³ä òèñêîì molding ïðåñóâàííÿ; ôîðìóâàííÿ cast ~ çàëèâêà (íàïð. ð³äêèì êîìïàóíäîì.) cold ~ õîëîäíå ïðåñóâàííÿ compression ~ ïðÿìå [êîìïðåñ³éíå] ïðåñóâàííÿ epoxy ~ ïðåñóâàííÿ åïîêñèäíî¿ ñìîëè impact ~ óäàðíå ïðåñóâàííÿ; øòàìïóâàííÿ injection ~ ïðåñóâàííÿ ï³ä òèñêîì mass ~ îá’ºìíå (ïîøàðîâå) ïðåñóâàííÿ plastic ~ ïðåñóâàííÿ ïëàñòìàñ; ïëàñòìàñîâà ãåðìåòèçàö³ÿ; ëèòâî ïëàñòìàñîâèõ âèðîá³â transfer ~ ëèòòüîâå [òðàíñôåðò³] ïðåñóâàííÿ molectronics ìîëåêòðîí³êà, ìîëåêóëÿðíà åëåêòðîí³êà monitor: ambient air ~ ïðèëàä äëÿ êîíòðîëþ ïîâ³òðÿíîãî ñåðåäîâèùà class test ~ ïðèëàä äëÿ ñîðòóâàííÿ, ïðèëàä äëÿ êëàñèô³êàö³¿ (²Ñ) contamination ~ ðåºñòðàòîð çàáðóäíåíü control program ~ ìîí³òîð óïðàâëÿþ÷î¿ ïðîãðàìè exposure ~ ïðèëàä äëÿ êîíòðîëþ ÷àñó åêñïîíóâàííÿ fault ~ ðåºñòðàòîð ïîìèëîê film-thickness ~ ïðèëàä äëÿ êîíòðîëþ òîâùèíè ïë³âîê humidity [moisture] ~ âîëîãîì³ð network status ~ ìîí³òîð ñòàíó ìåðåæ³ oxygen ~ ãàçîàíàë³çàòîð äëÿ âèçíà÷åííÿ êèñíþ particle ~ ë³÷èëüíèê ÷àñòèíîê thin-film ~ ïðèëàä äëÿ êîíòðîëþ òîâùèíè òîíêèõ ïë³âîê monitoring: humidity ~ êîíòðîëü âîëîãîñò³ nondestructive ~ íåðóéíóþ÷èé êîíòðîëü
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mor oxygen ~ êîíòðîëü âì³ñòó êèñíþ process ~ óïðàâë³ííÿ (òåõíîëîã³÷íèì) ïðîöåñîì quality ~ êîíòðîëü ÿêîñò³ reflectivity ~ êîíòðîëü ïðîöåñó ïî ñèãíàëó â³ääçåðêàëåííÿ visual ~ â³çóàëüíèé êîíòðîëü monobrid ìîíîáðèäíèé ìåòîä, ìîíòàæ äåê³ëüêîõ êðèñòàë³â ²Ñ â îäíîìó êîðïóñ³) monochromator ìîíîõðîìàòîð rapid scanning ~ ìîíîõðîìàòîð ç øâèäê³ñíèì ñêàíóâàííÿì monocrystal ìîíîêðèñòàë silicon ~ êðåìí³ºâèé ìîíîêðèñòàë, ìîíîêðèñòàë êðåìí³þ monocrystallization ïåðåòâîðåííÿ â ìîíîêðèñòàë³÷íó ñòðóêòóðó, ìîíîêðèñòàë³çàö³ÿ monolayer ìîíîìîëåêóëÿðíèé øàð, ìîíîøàð monolith 1. ìîíîë³òíà ²Ñ; íàï³âïðîâ³äíèêîâà ²Ñ 2. ñóö³ëüíà ï³äêëàäêà monoxide ìîíîîêñèä silicon ~ ìîíîîêñèä êðåìí³þ, SiO morphology: integrated ~ ìîðôîëîã³ÿ ²Ñ surface ~ ìîðôîëîã³ÿ ïîâåðõí³ mortalit/y: die ~ies â³äìîâè êðèñòàë³â (²Ñ) infant ~ ðàííÿ â³äìîâà MOS ñòðóêòóðà ìåòàë–îêñèä–íàï³âïðîâ³äíèê, ÌÎÍñòðóêòóðà adjustable-threshold ~ ÌÎÍ-ñòðóêòóðà ç ðåãóëüîâàíîþ ïîðîãîâîþ íàïðóãîþ aluminum-gate ~ ÌÎÍ-ñòðóêòóðà ç àëþì³í³ºâèì çàòâîðîì avalanche(-injection) stacked gate ~ ëàâèííî-³íæåêö³éíà ÌÎÍ-ñòðóêòóðà ç áàãàòîð³âíåâèìè çàòâîðàìè back-gate ~ ÌÎÍ-ñòðóêòóðà ç íèæí³ì çàòâîðîì bulk complementary ~ îá’ºìíà ÊÌÎÍñòðóêòóðà buried-channel ~ ÌÎÍ-ñòðóêòóðà ç ïðèõîâàíèì êàíàëîì buried-oxide ~ ÌÎÍ-ñòðóêòóðà ç ïîãëèáëåíèì îêñèäíèì øàðîì clocked complementary ~ òàêòîâàíà ÌÎÍñòðóêòóðà
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complementary (symmetry) ~ êîìïëåìåíòàðíà ÌÎÍ-ñòðóêòóðà, ÊÌÎÍñòðóêòóðà composite-gate ~ ÌÎÍ-ñòðóêòóðà ç áàãàòîð³âíåâèìè çàòâîðàìè depletion ~ ÌÎÍ-òðàíçèñòîð, ùî ïðàöþº â ðåæèì³ çá³äíåííÿ dielectric-insulated [dielectric-isolated] ~ ÌÎÍ-ñòðóêòóðà ç ä³åëåêòðè÷íîþ ³çîëÿö³ºþ double-diffused ~ ÌÎÍ-ñòðóêòóðà, âèãîòîâëåíà ìåòîäîì ïîäâ³éíî¿ äèôó糿, ÄÌÎÍ-ñòðóêòóðà double-implanted ~ ÌÎÍ-ñòðóêòóðà, âèãîòîâëåíà ìåòîäîì ïîäâ³éíî¿ ³îííî¿ ³ìïëàíòàö³¿ double-level polysilicon ~ ÌÎÍ-ñòðóêòóðà ç äâîìà ð³âíÿìè ïîë³êðèñòàë³÷íîãî êðåìí³þ elevated-electrode ~ ÌÎÍ-ñòðóêòóðà ç âèñòóïàþ÷èìè åëåêòðîäàìè enhancement ~ ÌÎÍ-òðàíçèñòîð, ùî ïðàöþº â ðåæèì³ çáàãà÷åííÿ floating-gate ~ ÌÎÍ-ñòðóêòóðà ç ïëàâàþ÷èì çàòâîðîì grooved-gate ~ ÌÎÍ-ñòðóêòóðà ç Vîáðàçíûì çàòâîðîì high-threshold ~ ÌÎÍ-ñòðóêòóðà ç âèñîêîþ ïîðîãîâîþ íàïðóãîþ, âèñîêîïîðîãîâà ÌÎÍ-ñòðóêòóðà high-voltage ~ âèñîêîâîëüòíà ÌÎÍñòðóêòóðà ion-implanted ~ ÌÎÍ-ñòðóêòóðà, âèãîòîâëåíà ìåòîäîì ³îííî¿ ³ìïëàíòàö³¿, ³îííî-³ìïëàíòîâàíà ÌÎÍ-ñòðóêòóðà lateral-merged bipolar ~ êîìá³íîâàí³ ãîðèçîíòàëüí³ á³ïîëÿðíèé ³ ÌÎÍòðàíçèñòîðè low-threshold ~ íèçüêîïîðîãîâà ÌÎÍñòðóêòóðà, ÌÎÍ-ñòðóêòóðà ç íèçüêîþ ïîðîãîâîþ íàïðóãîþ merged ~ ÌÎÍ-ñòðóêòóðà ç ôóíêö³îíàëüíî ñóì³ùåíèìè îáëàñòÿìè multigate ~ ÌÎÍ-ñòðóêòóðà áàãàòîçàòâîðà n(-channel)~ n-êàíàëüíàÿ ÌÎÍ-ñòðóêòóðà p(-channel)~ p-êàíàëüíà ÌÎÍ-ñòðóêòóðà polycrystalline silicon-gate ~ ÌÎÍñòðóêòóðà ç ïîë³êðåìí³ºâèì çàòâîðîì quadruply self-aligned ~ ÌÎÍ-ñòðóêòóðà, âèãîòîâëåíà çà òåõíîëî㳺þ ç ÷îòèðèêðàòíèì ñàìîñóì³ùåííÿì
mul refractory ~ ÌÎÍ-ñòðóêòóðà ³ç çàòâîðîì ç òóãîïëàâêîãî ìåòàëó resistive-gate ~ ÌÎÍ-ñòðóêòóðà ³ç çàòâîðîì ðåçèñòîðà scaled ~ ìàñøòàáîâàíà ÌÎÍ-ñòðóêòóðà, ÌÎÍ-ñòðóêòóðà ç ïðîïîðö³éíî çìåíøåíèìè ðîçì³ðàìè åëåìåíò³â Schottky-barrier ~ ÌÎÍ-ñòðóêòóðà ç áàð’ºðîì [çàòâîðîì] Øîòê³ self-aligned ~ ñàìîñóì³ùåíà ÌÎÍñòðóêòóðà silicon-gate ~ ÌÎÍ-ñòðóêòóðà ç êðåìí³ºâèì çàòâîðîì single-channel ~ ÌÎÍ-ñòðóêòóðà ç îäíîòèïíèìè êàíàëàìè single-poly gate ~ ÌÎÍ-ñòðóêòóðà ³ç çàòâîðàìè ç ìîíîêðèñòàë³÷íîãî ³ ïîë³êðèñòàë³÷íîãî êðåìí³þ substrate-fed ~ ÌÎÍ-ñòðóêòóðà ç æèâëåííÿì ÷åðåç ï³äêëàäêó vertical ~ ÌÎÍ-ñòðóêòóðà ç âåðòèêàëüíèìè òðàíçèñòîðàìè V-groove [V-notch] ~ ÌÎÍ-ñòðóêòóðà ç Vïîä³áíîþ êàíàâêîþ, VMOÏ-ñòðóêòóðà MOSFET ÌÎÍ-òðàíçèñòîð BC [buried-channel] ~ ÌÎÍ-òðàíçèñòîð ç ïðèõîâàíèì êàíàëîì diffused ~ äèôóç³éíèé ÌÎÍ-òðàíçèñòîð fine-line ~ ÌÎÍ-òðàíçèñòîð ç åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â GaAs ~ ÌÎÍ-òðàíçèñòîð íà àðñåí³ä³ ãàë³þ grooved-gate ~ ÌÎÍ-òðàíçèñòîð ç Vïîä³áíèì çàòâîðîì mesa ~ ÌÎÍ-ìåçàòðàíç³ñòîð self-aligned ~ ÌÎÍ-òðàíçèñòîð ç ñàìîñóì³ùåíèìè çàòâîðàìè short-channel ~ ÌÎÍ-òðàíçèñòîð ç êîðîòêèì êàíàëîì (íàïð. ñóáì³êðîííî¿ äîâæèíè) silicide ~ ÌÎÍ-òðàíçèñòîð ç ñèë³öèäíèìè øàðàìè submicrometer channel length ~ ÌÎÍòðàíçèñòîð ç ñóáì³êðîìåòðîâèì êàíàëîì mother: «big ~» âåëèêà ïðîìèñëîâà äèôóç³éíà ï³÷ motherboard îá’ºäíóâàëüíà (äðóêîâàíà) ïëàòà dual-in-line ~ ñêëàäàëüíèé DIP-êîðïóñ (äëÿ äåê³ëüêîõ áåçêîðïóñíèõ ²Ñ) motion ðóõ
defect ~ äðåéô äåôåêòó dislocation ~ çì³øåííÿ äèñëîêàö³é domain-wall ~ ðóõ äîìåííî¿ ìåæ³ mount êðèñòàëîíîñ³é, êðèñòàëîòðèìà÷ (äèâ. ò-æ carrier); îñíîâà (êîðïóñó) | âñòàíîâëþâàòè; âìîíòîâóâàòè, çáèðàòè mounter ìîíòàæíî-ñêëàäàëüíà óñòàíîâêà chip ~ óñòàíîâêà äëÿ ìîíòàæó áåçêîðïóñíèõ êîìïîíåíò³â surface ~ óñòàíîâêà ïîâåðõíåâîãî ìîíòàæó (íàïð. áåçêîðïóñíèõ êîìïîíåíò³â) mounting óñòàíîâêà; ìîíòàæ; çá³ðêà chip ~ ìîíòàæ êðèñòàë³â (íà ïëàò³); çá³ðêà êðèñòàë³â (â êîðïóñè) face-down [flip-chip] ~ ìîíòàæ ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà flush ~ âòîïëåíèé ìîíòàæ stand-off ~ ìîíòàæ íà ñòîâï÷èêîâèõ âèâîäàõ surface ~ ïîâåðõíåâèé ìîíòàæ (êîìïîíåíò³â â ì³êðîêîðïóñàõ) through-hole ~ ìîíòàæ (êîìïîíåíò³â) íà ñòàíäàðòí³é äðóêîâàí³é ïëàò³ (ç êð³çíèìè îòâîðàìè) wax ~ çàêð³ïëåííÿ (íàï³âïðîâ³äíèêîâèõ ïëàñòèí) âîñêîì multiboard áàãàòîøàðîâà äðóêîâàíà ïëàòà multichip 1. áàãàòîêðèñòàëüíà ²Ñ 2. áàãàòîêðèñòàëüíèé multilayers: L-B ~ áàãàòîøàðîâ³ ñòðóêòóðè Ëàíãìþðà– Áëîäæåòà multilythics áàãàòîôóíêö³îíàëüí³ ìîíîë³òí³ ³íòåãðàëüí³ ñõåìè multiplexer ìóëüòèïëåêñîð CCD ~ ìóëüòèïëåêñîð íà ÏÇÇ multiplication 1. ìóëüòèïë³êàö³ÿ, ìóëüòèïë³êóâàííÿ, ðîçìíîæåííÿ 2. ìíîæåííÿ; ïåðåìíîæóâàííÿ 3. ï³äñèëåííÿ; çá³ëüøåííÿ avalanche ~ ëàâèííå ìíîæåííÿ carrier ~ ìíîæåííÿ íîñ³¿â current ~ ï³äñèëåííÿ ïî ñòðóìó dislocation ~ ðîçìíîæåííÿ äèñëîêàö³é frequency ~ ìíîæåííÿ ÷àñòîòè image ~ ìóëüòèïë³êàö³ÿ çîáðàæåíü separate avalanche ~ ïîäîâæíº ëàâèííå ìíîæåííÿ signal ~ ï³äñèëåííÿ ñèãíàëó
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net step-and-repeat ~ ïîñë³äîâíà êðîêîâà ìóëüòèïë³êàö³ÿ multiplier ïîìíîæóâà÷, ðîçìíîæóâàëüíèé ïðèñòð³é multiprocessing 1. ìóëüòèïðîöåñîðíà [áàãàòîïðîöåñîðíà] îáðîáêà 2. ïàðàëåëüíà îáðîáêà multistrate áàãàòîøàðîâà ï³äêëàäêà; ï³äêëàäêà ç áàãàòîð³âíåâèìè ç’ºäíàííÿìè multistructure áàãàòîøàðîâà ñòðóêòóðà multiwire áàãàòîïðîâ³äíèêîâèé ìîíòàæ high-density ~ áàãàòîïðîâ³äíèêîâèé ìîíòàæ âèñîêî¿ ãóñòèíè mylar ìàéëàð; ìàéëàðîâà ïë³âêà
N nanocircuit ²Ñ ç íàíîñåêóíäíîþ øâèäêî䳺þ nanobridge íàíîïåðåìè÷êà, íàíîì³ñòîê (â íàäïðîâ³äíèêàõ) nanoelectronics 1. íàíîåëåêòðîí³êà 2. ³íòåãðàëüí³ ñõåìè ç íàíîñåêóíäíîþ øâèäêî䳺þ ³ ïîòóæí³ñòþ ðîçñ³þâàííÿ ïîðÿäêó ï³êîäæîóë³â nanolithography íàíîë³òîãðàô³ÿ, ë³òîãðàô³ÿ äëÿ ôîðìóâàííÿ åëåìåíò³â ç íàíîìåòðîâèìè ðîçì³ðàìè nanomask øàáëîí äëÿ íàíîë³òîãðàô³¿ nanoprocessor íàíîïðîöåñîð, ì³êðîïðîöåñîð ç íàíîñåêóíäíîþ øâèäêî䳺þ nanosiructure íàíîñòðóêòóðà, (íàï³âïðîâ³äíèêîâà) ñòðóêòóðà ç íàíîìåòðîâèìè ðîçì³ðàìè åëåìåíò³â semiconductor ~ íàï³âïðîâ³äíèêîâà íàíîñòðóêòóðà nanotechnology íàíîòåõíîëîã³ÿ, òåõíîëîã³ÿ íàíîñòðóêòóð narrowing: band-gap ~ çâóæåííÿ çàáîðîíåíî¿ (åíåðãåòè÷íî¿) çîíè n-doped ëåãîâàíèé äîíîðíîþ äîì³øêîþ neck: bird’s ~ «ïòàøèíà øèÿ» (ôîðìà á³÷íî¿ ñò³íêè ³çîëþþ÷î¿ êàíàâêè ³ç çìåíøåíîþ êðóòèçíîþ) negative íåãàòèâíå çîáðàæåííÿ, íåãàòèâ negatronics íåãàòðîí³êà (îáëàñòü íàï³âïðîâ³äíèêîâèõ ïðèëàä³â ç íåãàòèâíèì îïîðîì) n-epi åï³òàêñ³àëüíèé øàð (ç
åëåêòðîïðîâ³äí³ñòþ) n-òèïó nesting components ðîçì³ùåííÿ êîìïîíåíò³â (²Ñ) â ïåâí³ ì³ñöÿ net 1. ñõåìà 2. ñ³òêà 3. (îá÷èñëþâàëüíà) ìåðåæà (äèâ. ò-æ circuit, network) free choice ~ ìåðåæà â³ëüíîãî âèáîðó (äëÿ ìîäåëþâàííÿ ïðîöåñ³â â Â²Ñ íà ôóíêö³îíàëüíîìó ð³âí³) marked-graphs [MG] ~ ìåðåæà òèïó ìàðê³ðîâàíîãî ãðàôà self-loop-free ~ ìåðåæà, â³ëüíà â³ä ïåòåëü time-critical ~s êðèòè÷íî òèì÷àñîâ³ êîëà (îáóìîâëþþòü ñòàí ñèãíàë³â) network 1. ñõåìà 2. êîëî; (îá÷èñëþâàëüíà) ìåðåæà (äèâ. ò-æ circuit, net) active ~ àêòèâíà ñõåìà, ñõåìà íà àêòèâíèõ êîìïîíåíòàõ backbone ~ ìàã³ñòðàëüíà ìåðåæà backward-biased ~ îáåðíåíîçì³ùåíà ñõåìà capacitor ~ ëàíöþæîê êîíäåíñàòîð³â circuit-switched data ~ ìåðåæà ïåðåäà÷³ äàíèõ ç êîìóòàö³ºþ êàíàë³â computer service ~ ñåðâ³ñíà ìåðåæà ÅÎÌ connection ~ ñõåìà ç’ºäíàíü; ðîçâîäêà distributed ~ ñõåìà ç ðîçïîä³ëåíèìè ïàðàìåòðàìè distributed-processing ~ ìåðåæà ðîçïîä³ëåíî¿ îáðîáêè äàíèõ electronic ~ åëåêòðîííà ñõåìà forward-biased ~ ïðÿìîçì³ùåíà ñõåìà four-pole equivalent ~ åêâ³âàëåíòíà ñõåìà ÷îòèðèïîëþñíèêà high-precision ~ âèñîêîïðåöèç³éíà ñõåìà hybrid ~ ã³áðèäíà ñõåìà, Ã²Ñ integrated ~ ³íòåãðàëüíà ñõåìà, ²Ñ interconnection ~ ñõåìà ì³æç’ºäíàíü ladder ~ áàãàòîëàíêîâà ñõåìà ñòóï³í÷àñòîãî òèïó local (area) ~ ëîêàëüíà ìåðåæà logic ~ ëîã³÷íà ñõåìà loosely coupled ~ ñëàáêî çâ’ÿçàíà ìåðåæà lumped ~ ñõåìà ³ç çîñåðåäæåíèìè ïàðàìåòðàìè neural ~ íåéðîííà ñõåìà on-line database information ~ ³íôîðìàö³éíà ìåðåæà ç ³íòåðàêòèâíèì äîñòóïîì äî áàç äàíèõ passive ~ ïàñèâíà ñõåìà, ñõåìà íà ïàñèâíèõ êîìïîíåíòàõ resistance ~ ñõåìà ðåçèñòîðà
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non resistance-capacitance ~ ðåçèñòèâíîºìí³ñíà ëàíêà, RC-ëàíêà resistive ~ ðåçèñòèâíà ñõåìà resistor ~ ñõåìà ðåçèñòîðà semiconductor ~ 1. íàï³âïðîâ³äíèêîâà ñõåìà 2. ñõåìà íà íàï³âïðîâ³äíèêîâèõ ïðèëàäàõ single in-line ðàñkaged ~ ²Ñ â ïëîñêîìó êîðïóñ³ ç îäíîðÿäíèì ðîçòàøóâàííÿì âèâîä³â solid-state ~ òâåðäîò³ëüíà ñõåìà; íàï³âïðîâ³äíèêîâà ñõåìà switching ~ ïåðåìèêàþ÷à ñõåìà two-pole equivalent ~ åêâ³âàëåíòíà ñõåìà äâîïîëþñíèêà neuron 1. íåéðîí 2. ô³ðì. íåéðîí (äâîõâèâ³äíèé àêòèâíèé ïðèëàä ç âëàñòèâîñòÿìè íåéðîíà) semiconductor ~ íàï³âïðîâ³äíèêîâèé íåéðîí solid-state ~ òâåðäîò³ëüíèé íåéðîí; íàï³âïðîâ³äíèêîâèé íåéðîí neutralization: space-charge ~ êîìïåíñàö³ÿ [íåéòðàë³çàö³ÿ] îá’ºìíîãî çàðÿäó neutralizer: recombination-ñånter ~ çîíà êîìïåíñàö³¿ öåíòð³â ðåêîìá³íàö³¿ static ~ ïðèñòð³é äëÿ çíÿòòÿ çàðÿä³â ñòàòè÷íî¿ åëåêòðèêè nickel-chromium í³õðîì nickel-iron ïåðìàëîé nico ñïëàâ í³êåëþ ³ êîáàëüòó nife ñïëàâ í³êåëþ ³ çàë³çà niobate í³îáàò, ñ³ëü í³îá³åâî¿ êèñëîòè lithium ~ í³îáàò ë³ò³þ nitridation í³òðèäèçàö³ÿ, ôîðìóâàííÿ í³òðèäó êðåìí³þ; àçîòèçàö³ÿ bulk ~ îá’ºìíà í³òðèäèçàö³ÿ ion-beam ~ ³îííî-ïó÷êîâà í³òðèäèçàö³ÿ rapid thermal ~ øâèäêà òåïëîâà í³òðèäèçàö³ÿ titanium plasma ~ í³òðèäèçàö³ÿ òèòàíà â ïëàçì³ nitride í³òðèä; í³òðèä êðåìí³þ, Si3N4 boron ~ í³òðèä áîðó, BN boron-implanted ~ í³òðèä êðåìí³þ ç ³ìïëàíòîâàíèìè ³îíàìè áîðó plasma-deposited ~ øàð í³òðèäó êðåìí³þ, ñôîðìîâàíèé ìåòîäîì ïëàçìîâîãî îñàäæåííÿ
silicon ~ í³òðèä êðåìí³þ, Si3N4 tantalum ~ í³òðèä òàíòàëó, TaN nitrogen àçîò, N liquid ~ ð³äêèé àçîò noble áëàãîðîäíèé, õ³ì³÷íî ³íåðòíèé (íàïð. ïðî ìåòàë) nodal âóçëîâèé node 1. âóçîë 2. âóçîë, òî÷êà ðîçãàëóæåííÿ (ëàíêè) 3. âåðøèíà, âóçîë (ãðàôà) clock ~ ñèíõðîí³çóþ÷èé âóçîë current ~ âóçîë ñòðóìó enternal ~ âíóòð³øí³é âóçîë external ~ çîâí³øí³é âóçîë strong ~ âóçîë ç âåëèêîþ ëîã³÷íîþ ñèëîþ uninitialized ~ âóçîë â ñõåì³ ç íåâèçíà÷åíèì çíà÷åííÿì íàïðóãè noise øóì; øóìè; ïåðåøêîäà avalanche ~ øóì ëàâèííîãî ìíîæåííÿ background ~ ôîíîâèé øóì, ôîí base ~ øóì áàçè burst ~ ³ìïóëüñíà ïåðåøêîäà collector ~ øóì êîëåêòîðà contact ~ 1. êîíòàêòíèé øóì 2. øóì ð–nïåðåõîäó diffusion ~ äèôóç³éíèé øóì flicker ~ øóì ìåðåõò³ííÿ, ôë³êêåð-øóì generation-recombination (type) [G-R] ~ ãåíåðàö³éíî-ðåêîìá³íàö³éíèé øóì hum ~ ôîíîâèé øóì, ôîí interface-state ~ øóì, îáóìîâëåíèé äîì³øêîâèìè ñòàíàìè íà ïîâåðõí³ ðîçä³ëó junction ~ øóì ð–n-ïåðåõîäó leakage ~ øóìè âòðàò Schottky ~ äðîáîâèé øóì semiconductor ~ øóìè íàï³âïðîâ³äíèêîâîãî ïðèëàäó shot ~ äðîáîâèé øóì thermal ~ òåïëîâèé øóì velocity fluctuation ~ øóì, îáóìîâëåíèé ôëóêòóàö³ºþ øâèäêîñòåé íîñ³¿â nomenclature íîìåíêëàòóðà; ñèñòåìà óìîâíèõ ïîçíà÷åíü nonconductor (åëåêòðî)³çîëÿö³éíèé ìàòåð³àë nonflatness: slice ~ íåïëîùèíí³ñòü íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè nonisotropic àí³çîòðîïíèé nonlinearity íåë³í³éí³ñòü degenerate ~ âèðîäæåíà íåë³í³éí³ñòü nonplanar íåïëàíàðíèé (íàïð. ïðî ïðèëàä);
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one íåïëîñêèé (ïðî ïîâåðõíþ) nonuniformiry: axial etch [àõial rate] ~ íåð³âíîì³ðí³ñòü øâèäêîñò³ òðàâëåííÿ â îñüîâîìó íàïðÿì³ radial etch ~ íåð³âíîì³ðí³ñòü øâèäêîñò³ òðàâëåííÿ â ðàä³àëüíîìó íàïðÿì³ nonvolatile 1. åíåðãîçàëåæíèé (ïðî ÇÏ, ÿêèé çáåð³ãຠ³íôîðìàö³þ ïðè âèêëþ÷åíí³ åëåêòðîæèâëåííÿ) 2. íåëåòêèé normalization íîðìàë³çàö³ÿ; íîðìóâàííÿ notch êàíàâêà; âè¿ìêà; âèð³ç; ïàç | ðîáèòè âè¿ìêè; âèð³çàòè indexing ~ íàëàøòóâàëüíà âè¿ìêà, íàëàøòóâàëüíèé ïàç novolac íîâîëàê, íîâîëàêîâà ñìîëà nozzle: pick-and-place [pickup] ~ ñîïëî âàêóóìíîãî ñõîïëþþ÷îãî ïðèñòðîþ (äëÿ ïîâåðõíåâîãî ìîíòàæó) vacuum ~ âàêóóìíå ñîïëî (óñòàíîâêè ïîâåðõíåâîãî ìîíòàæó); âàêóóìíèé ï³íöåò n-type åëåêòðîííà, n-òèïó (ïðî åëåêòðîïðîâ³äí³ñòü) nucleation çàðîäêîóòâîðåííÿ, óòâîðåííÿ çàðîäê³â; çàðîäæåííÿ bubble ~ çàðîäæåííÿ ÖÌÄ crack ~ óòâîðåííÿ òð³ùèí epitaxial ~ çàðîäêîóòâîðåííÿ ïðè åï³òàêñ³¿ growth ~ óòâîðåííÿ çàðîäê³â ïðè ðîñò³ heterogeneous ~ ãåòåðîãåííå çàðîäêîóòâîðåííÿ homogeneous ~ îäíîð³äíå [ãîìîãåííå] çàðîäêîóòâîðåííÿ spurious ~ ïàðàçèòíå çàðîäêîóòâîðåííÿ surface ~ çàðîäêîóòâîðåííÿ íà ïîâåðõí³ nucleator 1. ïðèìàíêà, êðèñòàë ïðèìàíêè 2. ãåíåðàòîð ÖÌÄ nucleus 1. ÿäðî 2. çàðîäîê (êðèñòàë³çàö³¿) condensation ~ ÿäðî êîíäåíñàö³¿ crystallization ~ çàðîäîê êðèñòàë³çàö³¿ epitaxial ~ åï³òàêñ³àëüíèé çàðîäîê number: ~ fan-in êîåô³ö³ºíò îá’ºäíàííÿ ïî âõîäó ~ fan-out êîåô³ö³ºíò ðîçãàëóæåííÿ ïî âèõîäó atomic ~ àòîìíèé [ïîðÿäêîâèé] íîìåð cylinder ~ for source library ê³ëüê³ñòü öèë³íäð³â, â³äâåäåíèõ äëÿ á³áë³îòåêè âèõ³äíèõ ìîäóë³â ³ ¿¿ âì³ñòó hardness ~ ÷èñëî òâåðäîñò³
Lorentz ~ ÷èñëî Ëîðåíöà part ~ íîìåð äåòàë³; íîìåð êîìïîíåíòó (²Ñ)
O objective îá’ºêòèâ observer: built-in digital circuit ~ âáóäîâàíèé êîíòðîëëåð öèôðîâèõ ñõåì (â ïðîöåñîðíèõ ²Ñ) built-in logic block ~ âáóäîâàíèé áëîê ä³àãíîñòèêè ³ êîíòðîëþ ëîã³÷íèõ áëîê³â (â ͲÑ) occlusion îêëþç³ÿ, ïîãëèíàííÿ ãàç³â (ìåòàëàìè) occupancy energy levels çàïîâíåííÿ [ñòóï³íü çàïîâíåííÿ] åíåðãåòè÷íèõ ð³âí³â occupant: lattice-site ~s çàïîâíåííÿ (àòîìè, ³îíè) ó âóçëàõ êðèñòàë³÷íèõ ãðàòîê occurrence: failure ~ âèíèêíåííÿ â³äìîâè off âèìêíåíî; çàêðèòî off-chip 1. íàâ³ñíèé (ïðî êîìïîíåíò) 2. ðîçòàøîâàíèé çîâí³ êðèñòàëà (íàïð. ïðî ç’ºäíàííÿ) off-line àâòîíîìíèé, íåçàëåæíèé off-load íåíàâàíòàæåíèé; õîëîñòèé offset çì³ùåííÿ; çñóâ; â³äõ³ä | çì³ùóâàòè; çñóâàòè; éòè band-gap ~ çì³ùåííÿ çàáîðîíåíî¿ (åíåðãåòè÷íî¿) çîíè current ~ çì³ùåííÿ ñòðóìó voltage ~ çì³ùåííÿ íàïðóãè off-the-shelf ñòàíäàðòíèé; º â íàÿâíîñò³ ohmicity îï³ð oil: diffusion pump ~ ìàñëî äëÿ äèôóç³éíîãî íàñîñà on âêëþ÷åíî; â³äêðèòî on-chip ñôîðìîâàíèé íà îäíîìó êðèñòàë³ ç ³íøîþ ñõåìîþ one: binary ~ äâ³éêîâà îäèíèöÿ logical ~ ëîã³÷íà îäèíèöÿ one-chipper îäíîêðèñòàëüíèé ì³êðîïðîöå ñîð; îäíîêðèñòàëüíà ì³êðîÅÎÌ; îäíîêðèñòàëüíà ²Ñ one-shot îäíîâ³áðàòîð, ÷åêàþ÷èé [ìîíîñòàá³ëüíèé] ìóëüòèâ³áðàòîð
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opt one-stage îäíîêàñêàäíèé hands-off ~ àâòîìàòè÷íà îïåðàö³ÿ on-line 1. íåàâòîíîìíèé; êåðîâàíèé high-level signal ~ 1. ðîáîòà â ðåæèì³ öåíòðàëüíèì ïðîöåñîðîì 2. ïîòîêîâèé (ïðî âåëèêîãî ñèãíàëó 2. ðåæèì âåëèêîãî ñèãíàëó òåõíîëîã³÷íèé ïðîöåñ) 3. (ïðàöþþ÷èé) â high-speed ~ ðåæèì ðîáîòè ç âèñîêîþ ðåàëüíîìó ÷àñ³ øâèäêî䳺þ open 1. ðîçêðèâàòè, â³äêðèâàòè (â³êíî â øàð³ input/output ~ îïåðàö³ÿ ââîäó-âèâåäåííÿ îêñèäó) 2. ðîçðèâ; îáðèâ; ðîçìèêàííÿ large-signal ~ 1. ðîáîòà â ðåæèì³ âåëèêîãî (åëåêòðè÷íîãî ëàíöþãà) | ðîçðèâàòè; ñèãíàëó 2. ðåæèì âåëèêîãî ñèãíàëó îáðèâàòè; ðîçìèêàòè (åëåêòðè÷íèé ëàíöþã) lift-off patterning ~ ôîðìóâàííÿ ìàëþíêà à to ~ up ðîçêðèâàòè, â³äêðèâàòè (â³êíî â ìåòîäîì çâîðîòíî¿ ë³òîãðàô³¿ øàð³ îêñèäó) logical ~ ëîã³÷íà îïåðàö³ÿ opening 1. â³êíî, îòâ³ð (â ìàñêóþ÷îìó øàð³) low-level signal ~ 1. ðîáîòà â ðåæèì³ ìàëîãî (äèâ. ò-æ window) 2. ðîçêðèòòÿ (â³êíà â øàð³ ñèãíàëó 2. ðåæèì ìàëîãî ñèãíàëó, îêñèäó) 3. ðîçðèâ; ðîçìèêàííÿ ìàëîñèãíàëüíèé ðåæèì (åëåêòðè÷íîãî ëàíöþãà) manual ~ ðó÷íà îïåðàö³ÿ contact ~ 1. êîíòàêòíå â³êíî 2. ðîçêðèòòÿ manual off-line ~ ðîáîòà â ðó÷íîìó êîíòàêòíîãî â³êíà àâòîíîìíîìó ðåæèì³ (ïðè ïðîåêòóâàíí³ diffusion-mask ~ 1. äèôóç³éíå â³êíî, â³êíî òîïîëî㳿 ²Ñ) â ìàñö³ äëÿ äèôó糿 2. ðîçêðèòòÿ â³êíà â memory ~ îïåðàö³ÿ çâåðíåííÿ äî ÇÏ ìàñö³ äëÿ äèôó糿 pulsed ~ ³ìïóëüñíèé ðåæèì emitter-diffusion ~ â³êíî äëÿ åì³òåðíî¿ read-out ~ îïåðàö³ÿ ïðî÷èòóâàííÿ äèôó糿 semiautomated ~ 1. íàï³âàâòîìàòè÷íà mask ~ 1. â³êíî â ìàñö³ 2. ðîçêðèòòÿ â³êíà â îïåðàö³ÿ 2. íàï³âàâòîìàòè÷íèé ðåæèì ìàñö³ small-signal ~ 1. ðîáîòà â ðåæèì³ ìàëîãî via ~ êð³çíèé îòâ³ð (â ³çîëÿòîð³ ì³æ ñèãíàëó 2. ðåæèì ìàëîãî ñèãíàëó, ïðîâ³äíèìè çâ’ÿçêàìè) ìàëîñèãíàëüíèé ðåæèì window ~ â³êíî, îòâ³ð step-and-repeat ~ ïîñë³äîâíå êðîêîâå operand: ìóëüòèïë³êóâàííÿ (ñòðóêòóð character string ~ îïåðàíä ðÿäêà ñèìâîë³â ôîòîøàáëîí³â) operation 1. ðîáîòà; ôóíêö³îíóâàííÿ 2. storage ~ îïåðàö³ÿ çâåðíåííÿ äî ÇÏ îïåðàö³ÿ; ä³ÿ 3. ðåæèì (ðîáîòè) (äèâ. ò-æ write ~ îïåðàö³ÿ çàïèñó mode) optics îïòèêà (1. ðîçä³ë ô³çèêè, ùî âèâ÷ຠautomatic ~ 1. àâòîìàòè÷íà îïåðàö³ÿ 2. âëàñòèâîñò³ ñâ³òëà 2. îïòè÷í³ ïðèëàäè) àâòîìàòè÷íèé ðåæèì crystal ~ êðèñòàëîîïòèêà avalanche ~ 1. ðîáîòà â ðåæèì³ ëàâèííîãî diffractive X-ray ~ äèôðàêö³éíà ïðîáîþ 2. ëàâèííèé ðåæèì ðåíòãåí³âñüêà îïòèêà batch ~ ãðóïîâà îïåðàö³ÿ integrated ~ ³íòåãðàëüíà îïòèêà; bipolar ~ ìåõàí³çì ðîáîòè á³ïîëÿðíîãî ³íòåãðàëüíà îïòîåëåêòðîí³êà ïðèëàäó split-field ~ îïòèêà ç ðîçùåïëåíèì ïîëåì cassette-to-cassette ~ ïåðåäà÷à step-and-repeat ~ ôîòîïîâòîðþâà÷, íàï³âïðîâ³äíèêîâèõ ïëàñòèí ç êàñåòè â ôîòîøòàìï êàñåòó optimization îïòèì³çàö³ÿ concurrent ðåripheral ~ ïàðàëåëüíå alignment wavelength ~ îïòèì³çàö³ÿ äîâæèíè õâèë³ ïðè ñóì³ùåíí³ ôóíêö³îíóâàííÿ ïåðèôåð³éíèõ ïðèñòðî¿â (ôîòîøàáëîíó ç ïëàñòèíîþ) continuous-wave ~ áåçïåðåðâíèé ðåæèì layout ~ îïòèì³çàö³ÿ òîïîëî㳿 depletion-mode ~ ðîáîòà â ðåæèì³ çá³äíåííÿ linear ~ ë³í³éíà îïòèì³çàö³ÿ (ïðî ïîëüîâèé òðàíçèñòîð) enhancement-mode ~ ðîáîòà â ðåæèì³ nonlinear ~ íåë³í³éíà îïòèì³çàö³ÿ çáàãà÷åííÿ (ïðî ïîëüîâèé òðàíçèñòîð) parameter ~ îïòèì³çàö³ÿ ïàðàìåòð³â fault-free ~ áåçäåôåêòíà îïåðàö³ÿ
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osc process ~ îïòèì³çàö³ÿ òåõíîëîã³÷íîãî ïðîöåñó optimizer: circuit ~ îïòèì³çàòîð ñõåì process ~ îïòèì³çàòîð òåõíîëîã³÷íîãî ïðîöåñó option 1. âèá³ð; ìîæëèâ³ñòü âèáîðó 2. âàð³àíò laser redundancy ~ âàð³àíò ðåçåðâóâàííÿ (â ÇÏ) ç âèêîðèñòàííÿì ëàçåðíîãî âèïàëþâàííÿ ïåðåìè÷îê microprocessor-based control ~ ì³êðîïðîöåñîðíèé âàð³àíò óïðàâë³ííÿ microprogrammed control ~ âàð³àíò óïðàâë³ííÿ ç âèêîðèñòàííÿì ì³êðîïðîãðàìóâàííÿ pin ~ âàð³àíò ðîçòàøóâàííÿ øòèðüêîâèõ âèâîä³â technology ~ 1. âèá³ð òåõíîëî㳿 2. òåõíîëîã³÷íèé âàð³àíò optocoupler îïòðîí, îïòîïàðà optoelectronics îïòîåëåêòðîí³êà integrated ~ ³íòåãðàëüíà îïòîåëåêòðîí³êà; îïòîåëåêòðîíí³ ²Ñ optoisolator îïòðîí, îïòîïàðà monolithic ~ ìîíîë³òíèé îïòðîí (êîìá³íàö³ÿ ñâ³òëîä³îäà ³ ôîòîä³îäà, ñôîðìîâàíîãî íà îäí³é ï³äêëàäö³) optosemiconductor îïòîåëåêòðîííèé íàï³âïðîâ³äíèêîâèé ïðèëàä optron îïòðîí, îïòîïàðà Optronics îïòðîí³êà; îïòîåëåêòðîí³êà OR: wired ~ ìîíòàæíå ÀÁÎ order ïîðÿäîê; âïîðÿäêîâàí³ñòü; ïîñë³äîâí³ñòü | óïîðÿäêîâóâàòè channel wiring ~ âïîðÿäêîâàí³ñòü êàíàëüíèõ ç’ºäíàíü crystal ~ êðèñòàëîãðàô³÷íèé ïîðÿäîê fringe ~ ïîðÿäîê ³íòåðôåðåíö³¿ orientation ~ îð³ºíòàö³ÿ (íàïð. íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) row-major ~ ïîðÿäêîâèé ïîðÿäîê çàïèñó (åëåìåíò³â â ìàñèâ³) stacking ~ ïîñë³äîâí³ñòü ðîçì³ùåííÿ (íàïð. øàð³â áàãàòîð³âíåâèõ ç’ºäíàíü) ordering âïîðÿäêóâàííÿ epitaxial ~ âïîðÿäêóâàííÿ àòîì³â â åï³òàêñ³àëüíîìó øàð³ magnetic ~ ìàãí³òíå âïîðÿäêóâàííÿ organics îðãàí³÷í³ ñïîëóêè; îðãàí³êà
organization îðãàí³çàö³ÿ; àðõ³òåêòóðà block-replicate ~ îðãàí³çàö³ÿ ç áëîêîâîþ ìóëüòèïë³êàö³ºþ (íàïð. â ÇÏ íà ÖÌÄ) chip ~ îðãàí³çàö³ÿ êðèñòàëà ²Ñ (ðîçì³ùåííÿ åëåìåíò³â íà êðèñòàë³ ²Ñ) major-minor loop ~ îðãàí³çàö³ÿ ïî ñõåì³ ðåã³ñòð çâ’ÿçêó—íàêîïè÷óâàëüí³ ðåã³ñòðè (â ÇÏ íà ÖÌÄ) organometallic ìåòàëîîðãàí³÷íèé organosilicone êðåìí³éîðãàí³÷íèé orientation îð³ºíòàö³ÿ crystallographic ~ êðèñòàëîãðàô³÷íà îð³ºíòàö³ÿ die ~ îð³ºíòàö³ÿ êðèñòàëà ²Ñ growth ~ íàïðÿì ðîñòó (êðèñòàëà) preferred ~ ïåðåâàæíà [ïåðåâàæàþ÷à] îð³ºíòàö³ÿ seed ~ îð³ºíòàö³ÿ (ìîíîêðèñòàë³÷íî¿) ïðèìàíêè substrate ~ îð³ºíòàö³ÿ ï³äêëàäêè target ~ îð³ºíòàö³ÿ ì³øåí³ 111 ~ îð³ºíòàö³ÿ â êðèñòàëîãðàô³÷íî¿ ïëîùèí³ 111 origination: machine keyboard ~ ââåäåííÿ ç êëàâ³àòóðè ÅÎÌ orthoferrite îðòîôåðèò oscillation 1. êîëèâàííÿ 2. â³áðàö³ÿ Gunn relaxation ~ ãàíí³âñüê³ êîëèâàííÿ ðåëàêñàö³é SdH [Shubnikov-de Haas] ~ îñöèëÿö³¿ Øóáíèêîâà—äå Ãààçà oscillator 1. ãåíåðàòîð 2. îñöèëÿòîð acoustic-wave ~ ãåíåðàòîð íà ÏÀÕ, ÏÀÕãåíåðàòîð automatic computing transfer ~ àâòîìàòè÷íèé ãåíåðàòîð êîìàíä ïåðåõîäó â õîä³ îá÷èñëåíü avalanche-diode ~ 1. ãåíåðàòîð íà ëàâèííîìó ä³îä³ 2. ãåíåðàòîð íà ëàâèííîïðîë³òíîìó ä³îä³ avalanche transit-time ~ ãåíåðàòîð íà ëàâèííî-ïðîë³òíîìó ä³îä³ blocking ~ áëîê³íã-ãåíåðàòîð channel select ~ ãåíåðàòîð ÷àñòîòè âèáîðó êàíàëó crystal-controlled ~ êâàðöîâèé ãåíåðàòîð, ãåíåðàòîð ç êâàðöîâîþ ñòàá³ë³çàö³ºþ ÷àñòîòè
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ove current-mirrors ~ ãåíåðàòîð íà ñòðóìîâèõ äçåðêàëàõ driving ~ çàäàþ÷èé ãåíåðàòîð gated ~ ñòðîáîâàíèé ãåíåðàòîð Gunn-effect ~ ãåíåðàòîð íà ä³îä³ Ãàííà parametric ~ ïàðàìåòðè÷íèé ãåíåðàòîð piezoelectric ~ êâàðöîâèé ãåíåðàòîð, ãåíåðàòîð ç êâàðöîâîþ ñòàá³ë³çàö³ºþ ÷àñòîòè pulse ~ ³ìïóëüñíèé ãåíåðàòîð quantum well ~ ãåíåðàòîð íà êâàíòîâèõ ÿìàõ RC ~ RC-ãåíåðàòîð ring ~ ê³ëüöåâèé ãåíåðàòîð Schottky diode ~ ãåíåðàòîð íà ä³îä³ Øîòê³ voltage-controlled ~ ãåíåðàòîð, êåðîâàíèé íàïðóãîþ, ÃÊÍ outage â³äìîâà out-diffusion çâîðîòíà äèôóç³ÿ, äèôóç³ÿ ç îá’ºìó (ï³äêëàäêè) simultaneous ~ îäíî÷àñíà çâîðîòíà äèôóç³ÿ outfit êîìïëåêò óñòàòêóâàííÿ; íàá³ð ³íñòðóìåíò³â oulgassing çíåãàæóâàííÿ outline: transistor ~ êîíô³ãóðàö³ÿ òðàíçèñòîðà outperform ïåðåâåðøóâàòè ïî ïàðàìåòðàõ output 1. âèõ³ä; âèâ³ä 2. âèõ³äíèé ñèãíàë; âèõ³äí³ äàí³ 3. âèõ³äíà ïîòóæí³ñòü 4. ïðîäóêòèâí³ñòü 5. âèõ³äíèé ïðèñòð³é digital ~ 1. öèôðîâèé âèõ³ä 2. öèôðîâèé âèõ³äíèé ñèãíàë 3. âèõ³äíà öèôðîâà ²Ñ high ~ 1. âèõ³äíèé ñèãíàë âèñîêîãî ð³âíÿ 2. âèñîêà âèõ³äíà ïîòóæí³ñòü 3. âèñîêà ïðîäóêòèâí³ñòü low ~ 1. âèõ³äíèé ñèãíàë íèçüêîãî ð³âíÿ 2. íèçüêà âèõ³äíà ïîòóæí³ñòü 3. íèçüêà ïðîäóêòèâí³ñòü one ~ 1. âèõ³ä «1» 2. âèõ³äíèé ñèãíàë îäèíèö³ open collector ~ âèõ³äíèé òðàíçèñòîð ç ðîç³ìêíåíèì êîëåêòîðîì power ~ âèõ³äíà ïîòóæí³ñòü rated ~ íîì³íàëüíà âèõ³äíà ïîòóæí³ñòü read ~ âèõ³äíèé ñèãíàë ç÷èòóâàííÿ Schottky-clamped ~ âèõ³äíèé ô³êñóþ÷èé ä³îä Øîòê³ unity gain ~ âèõ³ä ç êîåô³ö³ºíòîì ï³äñèëåííÿ 1 video ~ âèõ³äíèé â³äåîñèãíàë
voltage ~ âèõ³äíà íàïðóãà wired-AND ~ âèõ³ä ìîíòàæíîãî ² zero ~ 1. âèõ³ä «0» 2. âèõ³äíèé ñèãíàë íóëÿ outspeed ïåðåâèùóâàòè [ïåðåâåðøóâàòè] ïî øâèäêî䳿 oven 1. ï³÷ 2. òåðìîñòàò crucible ~ òèãåëüíà ï³÷ diffusion ~ äèôóç³éíà ï³÷ drying ~ ï³÷ äëÿ ñóøêè, ñóøèëüíà ï³÷ gas backing ~ ï³÷ äëÿ âèïàëåííÿ â ãàçîâîìó ñåðåäîâèù³ high-vacuum ~ âèñîêîâàêóóìíà ï³÷ multizone ~ áàãàòîçîííà ï³÷ source ~ ï³÷ äëÿ âèïàðîâóâàííÿ äæåðåëà äîì³øêè overcoat (çîâí³øíº) ïîêðèòòÿ | íàíîñèòè (çîâí³øíº) ïîêðèòòÿ passivating ~ ïàñèâóþ÷å ïîêðèòòÿ overcompensation ïåðåêîìïåíñàö³ÿ overcomplexity ï³äâèùåíèé ñòóï³íü ôóíêö³îíàëüíî¿ ñêëàäíîñò³ (²Ñ) overcurrent íàäñòðóì overdesign ïðîåêòóâàííÿ ç ðåçåðâóâàííÿì overdeveloping ïåðåïðîÿâëåííÿ overdoping íàäì³ðíå ëåãóâàííÿ overetching 1. ïåðåòðóþâàííÿ 2. ï³äòðóþâàííÿ oxide ~ ïåðåòðóþâàííÿ îêñèäíîãî øàðó overexposure ïåðåäåðæêà overglaze ñêëÿíå ïîêðèòòÿ | íàíîñèòè ñêëÿíå ïîêðèòòÿ, ñêëèòè overgrowth âèðîùóâàííÿ; íàðîùóâàííÿ epitaxial ~ åï³òàêñ³àëüíå íàðîùóâàííÿ overhang íàâèñàííÿ, íàâèñàþ÷èé êðàé (íàïð. ðåçèñòà) | íàâèñàòè (íàïð. ïðî ðåçèñò) overlap 1. ïåðåêðèòòÿ | ïåðåêðèâàòè 2. ç’ºäíàííÿ âíàõëåñòêó | ñïîëó÷àòè âíàõëåñòêó band ~ ïåðåêðèòòÿ åíåðãåòè÷íèõ çîí gate/source ~ ïåðåêðèòòÿ çàòâîðà ³ âèòîêó overlay 1. ïîêðèòòÿ; âåðõí³é øàð 2. ïîºäíàííÿ (íàïð. øàð³â) oxide ~ îêñèäíå ïîêðèòòÿ precision ~ ïðåöèç³éíå ïîºäíàííÿ overlayer øàð íà ïîâåðõí³, îñàä carbonaceous blocking ~ âóãëåöåâì³ñíèé [âóãëåöåâèé] áëîêóþ÷èé (íàïð. òðàâëåííÿ) îñàä CF [fluorocarbon] ~ ôòîðèñòî-âóãëåöåâèé îñàä
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oxi residue ~ çàëèøêîâèé øàð íà ïîâåðõí³, îñàä ultra-violet laser ~ îêñèäóâàííÿ ï³ä 䳺þ overrunning ïåðåâàíòàæåííÿ; âèõ³ä çà ìåæ³ ëàçåðíîãî âèïðîì³íþâàííÿ â ÓÔ-ä³àïàçîí³, oversaturation ïåðåíàñè÷åííÿ ÓÔ-ëàçåðíå îêñèäóâàííÿ overvoltage ïåðåíàïðóæåííÿ wet ~ îêñèäóâàííÿ â àòìîñôåð³ âîëîãîãî ovonics òåõí³êà ïðèëàä³â Îâøèíñüêîãî (íà êèñíþ; îêñèäóâàííÿ â ïàðàõ âîäè îñíîâ³ àìîðôíèõ õàëüêîãåí³äíèõ ñòåêîë) oxide 1. îêñèä, îêñèä 2. ä³îêñèä êðåìí³þ, SiO2 Oxi ïðîöåñ «Îêñè» (âèðîùóâàííÿ òîâñòèõ Al [aluminum] ~ îêñèä àëþì³í³þ, Àl2Î3 îêñèäíèõ îñòð³âö³â ì³æ àêòèâíèìè antimonous [antimony] ~ òðèîêñèä ñóðìè, Sb2O3 åëåìåíòàìè ²Ñ äëÿ ¿õ êðàùî¿ ³çîëÿö³¿) oxidant îêèñëþâà÷ arsenic [arsenous] ~ òðèîêñèä ìèø’ÿêó, oxidation îêñèäóâàííÿ, îêèñëåííÿ As2O3 anodic ~ àíîäóâàííÿ beryllium ~ îêñèä áåðèë³þ, ÂåÎ catalytic ~ êàòàë³òè÷íå îêñèäóâàííÿ boric [boron] ~ îêñèä áîðó, B2O3 (ïðîâîäèòüñÿ ïðè ê³ìíàòí³é òåìïåðàòóð³ ó boron-implanted ~ ä³îêñèä êðåìí³þ ç ïðèñóòíîñò³ êàòàë³çàòîðà) ³ìïëàíòîâàíèìè ³îíàìè áîðó controlled ~ êåðîâàíå îêñèäóâàííÿ buried ~ çàãëèáëåíèé îêñèä dry ~ ñóõå îêñèäóâàííÿ; îêñèäóâàííÿ â capping ~ îêñèäíå ïîêðèòòÿ àòìîñôåð³ ñóõîãî êèñíþ channel ~ îêñèä íà êàíàëüí³é îáëàñò³ electrolytic ~ åëåêòðîë³òè÷íå îêñèäóâàííÿ chemical vapor deposited ~ îêñèä, field ~ îêñèäóâàííÿ äëÿ ôîðìóâàííÿ ñôîðìîâàíèé õ³ì³÷íèì îñàäæåííÿì ç çàõèñíîãî îêñèäíîãî ïîêðèòòÿ ïàðîâî¿ ôàçè gate ~ îêñèäóâàííÿ äëÿ ôîðìóâàííÿ îêñèäó crossover ~ (ðîçä³ëîâèé) îêñèä íà ïåðåòèí³ ï³äçàòâîðà ç’ºäíàíü heat ~ òåðì³÷íå [âèñîêîòåìïåðàòóðíå] doped ~ 1. ëåãîâàíèé îêñèä 2. ëåãîâàíèé îêñèäóâàííÿ ä³îêñèä êðåìí³þ high-pressure ~ îêñèäóâàííÿ ïðè âèñîêîìó electron-beam evaporated ~ îêñèä, òèñêó ñôîðìîâàíèé ìåòîäîì åëåêòðîííîinterlevel ~ ì³æð³âíåâå îêñèäóâàííÿ, ïðîìåíåâîãî íàïèëåííÿ ôîðìóâàííÿ ì³æð³âíåâîãî îêñèäíîãî øàðó emitter reach-through ~ îêñèä íà åì³òåðí³é laser-induced ~ ëàçåðíî-ñòèìóëþþ÷å êð³çí³é îáëàñò³ îêñèäóâàííÿ evaporated ~ íàïèëåíèé îêñèä lateral ~ îêñèäóâàííÿ â ãîðèçîíòàëüíîìó ferric ~ îêñèä çàë³çà, Fe2O3 ferrous ~ çàêèñ çàë³çà, FeO íàïðÿì³; îêñèäóâàííÿ êðåìí³þ ï³ä ìàñêîþ field ~ çàõèñíèé øàð îêñèäó low-temperature ~ íèçüêîòåìïåðàòóðíå gate [gated] ~ 1. îêñèäíèé øàð çàòâîðà, îêñèäóâàííÿ îêñèä ï³äçàòâîðà 2. ä³îêñèä ï³äçàòâîðà open-tube ~ îêñèäóâàííÿ ìåòîäîì â³äêðèòî¿ êðåìí³þ òðóáè implanted ~ 1. ³îííî-³ìïëàíòîâàíèé îêñèä planar ~ îêñèäóâàííÿ äëÿ ôîðìóâàííÿ 2. ³îííî-³ìïëàíòîâàíèé ä³îêñèä êðåìí³þ îêñèäíîãî øàðó íà ïîâåðõí³ insulation ~ 1. ³çîëþþ÷èé îêñèä 2. plasma ~ îêñèäóâàííÿ â ïëàçì³, ïëàçìîâå ³çîëþþ÷èé ä³îêñèä êðåìí³þ îêñèäóâàííÿ interfacial ~ îêñèä íà ïîâåðõí³ ðîçä³ëó selective ~ âèá³ðêîâå îêñèäóâàííÿ iron ~ îêñèä çàë³çà, Fe2O3 self-terminating ~ îêñèäóâàííÿ, ùî lead-strontium-ñîðper ~ (íàäïðîâ³äíèé) ñàìîïðèïèíÿºòüñÿ îêñèä òèïó Pb–Sr–Ñu–Î steam ~ îêñèäóâàííÿ â ïàðàõ âîäè low-temperature ~ îêñèä, ñôîðìîâàíèé ïðè surface-wide ~ îêñèäóâàííÿ âñ³º¿ ïîâåðõí³ íèçüêîòåìïåðàòóðíîìó îêñèäóâàíí³ (íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) magnesium ~ îêñèä ìàãí³þ, MgO thermal ~ òåðì³÷íå [âèñîêîòåìïåðàòóðíå] mask(ing)~ 1. ìàñêóþ÷èé îêñèä 2. îêñèäóâàííÿ ìàñêóþ÷èé ä³îêñèä êðåìí³þ
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pac MOS ~ òîíêèé øàð îêñèäó â ÌÎÍñòðóêòóð³ multilevel ~ (ðîçä³ëþþ÷èé) îêñèä â áàãàòîð³âíåâèõ ç’ºäíàííÿõ nitric ~ îêñèä àçîòó, NO nitrided ~ àçîòîâàíèé îêñèä nitrous ~ çàêèñ àçîòó, N2O phosphorus doped ~ ä³îêñèä êðåìí³þ, ëåãîâàíèé ôîñôîðîì planar ~ øàð îêñèäó íà ïîâåðõí³ ïëàíàðíîãî íàï³âïðîâ³äíèêîâîãî ïðèëàäó, ïëàíàðíèé îêñèä poly ~ îêñèä ïîë³êðèñòàë³÷íîãî êðåìí³þ pyrolytic ~ îêñèä, ñôîðìîâàíèé ï³ðîë³çîì rare-earth ~ îêñèä ð³äêîçåìåëüíîãî åëåìåíòó recessed ~ îêñèä, ùî çàïîâíþº êàíàâêè refractory ~ òóãîïëàâêèé îêñèä screen (ing) ~ ìàñêóþ÷èé îêñèä semiconducting [semiconductor] ~ 1. íàï³âïðîâ³äíèêîâèé îêñèä 2. îêñèä íàï³âïðîâ³äíèêà semirecessed [shallow] ~ îêñèä, ùî çàïîâíþº äð³áí³ êàíàâêè silicon ~ ä³îêñèä êðåìí³þ, SiO2 stepped ~ ñòóï³í÷àñòèé øàð îêñèäó stress-relief ~ îêñèä, ùî çìåíøóº ìåõàí³÷íó íàïðóãó thermally grown ~ òåðì³÷íî âèðîùåíèé îêñèä thick ~ òîâñòèé øàð îêñèäó, òîâñòèé îêñèä thin ~ òîíêèé øàð îêñèäó, òîíêèé îêñèä tin ~ îêñèä îëîâà, SnO tunnel ~ øàð îêñèäó, ùî çàáåçïå÷óº òóíåëþâàííÿ åëåêòðîí³â oxidizability îêñèäèðóåìîñòü, îêèñëÿåìîñòü, çäàòí³ñòü äî îêèñëåííÿ oxidizer 1. îêèñëþâà÷ 2. óñòàíîâêà äëÿ îêñèäóâàííÿ gas-plasma ~ ïëàçìîâèé ðåàêòîð äëÿ îêñèäóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí multiwafer plasma ~ ïëàçìîâèé ðåàêòîð äëÿ ãðóïîâîãî îêñèäóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí semiconductor ~ 1. îêèñëþâà÷ äëÿ íàï³âïðîâ³äíèê³â 2. óñòàíîâêà äëÿ îêñèäóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí oxydation îêñèäóâàííÿ, îêèñëåííÿ (äèâ. ò-æ oxidation) oxyfluoride îêñèôòîðèä (íàïð.
âèñîêîòåìïåðàòóðíèé íàäïðîâ³äíèê) oxygen êèñåíü, Î atomic ~ àòîìíèé êèñåíü dry ~ ñóõèé êèñåíü microwave-excited ~ êèñåíü, çáóäæåíèé â ÍÂ×-ïëàçì³ molecular ~ ìîëåêóëÿðíèé êèñåíü plasma-excited ~ êèñåíü, çáóäæåíèé â ïëàçì³ wet ~ âîëîãèé êèñåíü oxygenation íàñè÷åííÿ êèñíåì oxynitride îêñèí³òðèä silicon ~ îêñèí³òðèä êðåìí³þ
P pack 1. êîðïóñ | ìîíòîâóâàòè â êîðïóñ³, êîðïóñóâàòè (äèâ. ò-æ ðàñkage) 2. óïàêîâêà; çá³ðêà; áëîê ammo ~ òåõíîëîã³÷íà óïàêîâêà êîìïîíåíò³â ïîâåðõíåâîãî ìîíòàæó beam-lead IC ~ êîðïóñ ²Ñ ç áàëêîâèìè âèâîäàìè blade ~ ïàêåò [íàá³ð] ð³æó÷èõ ïîëîòåí diode ~ ä³îäíà çá³ðêà flat ~ ïëîñêèé êîðïóñ ç ïëàíàðíèìè âèâîäàìè mask ~ óïàêîâêà äëÿ ôîòîøàáëîíó power ~ äæåðåëî æèâëåííÿ rail ~ òåõíîëîã³÷íà óïàêîâêà ðåéêîâîãî òèïó reel (blister) ~ òåõíîëîã³÷íà óïàêîâêà â ñòð³÷êîâîìó ðóëîí³ êîìïîíåíò³â ïîâåðõíåâîãî ìîíòàæó ç ïðîçîðèìè ãí³çäàìè reel radial ~ òåõíîëîã³÷íà óïàêîâêà â ñòð³÷êîâîìó ðóëîí³ êîìïîíåíò³â ïîâåðõíåâîãî ìîíòàæó ç ðàä³àëüíèìè âèâîäàìè transistor ~ òðàíçèñòîðíà ìàòðèöÿ package 1. êîðïóñ 2. ìîíòàæ â êîðïóñ³, êîðïóñóâàííÿ [ âìîíòîâóâàòè â êîðïóñ³, êîðïóñóâàòè (äèâ. ò-æ ðàñê) 3. óïàêîâêà; çá³ðêà; ìîäóëü; áëîê 4. ïàêåò ïðîãðàì bubble ~ 1. êîðïóñ äëÿ ïðèñòðîþ íà ÖÌÄ 2. ìîäóëü íà ÖÌÄ cerdip ~ ìåòàëîêåðàì³÷íèé DIP-êîðïóñ chip ~ êîðïóñ êðèñòàëà ²Ñ consistent planar ~ ïëîñêèé êîðïóñ ç ïëàíàðíèìè âèâîäàìè
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pad controlled impedance ~ êîðïóñ (ÍÂ× ²Ñ), ùî çàáåçïå÷óº óçãîäæåííÿ ïîâíèõ îïîð³â custom ~ çàìîâëåíèé êîðïóñ; ñïåö³àë³çîâàíèé êîðïóñ design automation software ~ ïàêåò ïðîãðàì äëÿ ÑÀÏÐ discrete-component ~ 1. êîðïóñ ïðèñòðîþ íà äèñêðåòíèõ êîìïîíåíòàõ 2. êîðïóñ äèñêðåòíîãî êîìïîíåíòó dual in-line ~ ïëîñêèé êîðïóñ ç äâîðÿäíèì ðîçòàøóâàííÿì âèâîä³â, êîðïóñ òèïó DIP, DIP-êîðïóñ epoxy ~ êîðïóñ ç åïîêñèäíî¿ ñìîëè flat-ðàñê ~ ïëîñêèé êîðïóñ ç ïëàíàðíèìè âèâîäàìè glass-frit ~ êîðïóñ ç ôð³òó grid array-pinned - êîðïóñ Â²Ñ ç ìàòðèöåþ âèâîä³â impact-extruded ~ êîðïóñ, âèãîòîâëåíèé óäàðíèì ïðåñóâàííÿì laminated ~ áàãàòîøàðîâèé (ïëàñòìàñîâèé) êîðïóñ leadless ~ áåçâèâ³äíèé êîðïóñ low-profile ~ ìàëîãàáàðèòíèé êîðïóñ metal-can ~ ìåòàëåâèé êîðïóñ òèïó ÒÎ molded ~ ïðåñîâàíèé êîðïóñ; ïëàñòìàñîâèé êîðïóñ multilayer ~ áàãàòîøàðîâèé (êåðàì³÷íèé) êîðïóñ multipin ~ áàãàòîøòèðüêîâèé êîðïóñ multiple-in-line ~ ïëîñêèé êîðïóñ ç ðîçòàøóâàííÿì áàãàòîðÿäíîñò³ øòèðüêîâèõ âèâîä³â optimization ~ ïàêåò ïðîãðàì îïòèì³çàö³¿ pin-grid array ~ ïëîñêèé êîðïóñ ç ìàòðè÷íèì ðîçòàøóâàííÿì øòèðüêîâèõ âèâîä³â àáî êîíòàêòíèõ ñòîâï÷èê³â planar ~ ïëîñêèé êîðïóñ ç ïëàíàðíèìè âèâîäàìè platform ~ ïëîñêèé êîðïóñ plug-in ~ êîðïóñ ç øòèðüêîâûìè âèâîäàìè quad flat ~ ïëîñêèé êîðïóñ ç ÷îòèðèñòîðîíí³ì ðîçòàøóâàííÿì âèâîä³â quad in-line ~ ïëîñêèé êîðïóñ ç ÷îòèðèðÿäíèì ðîçòàøóâàííÿì âèâîä³â silver-based ~ êîðïóñ ç ðàìêîþ ç ñð³áíîãî ïðèïîþ (äëÿ ïðèêð³ïëåííÿ êðèñòàëà) single in-line ~ ïëîñêèé êîðïóñ ç îäíîðÿäíèì ðîçòàøóâàííÿì âèâîä³â
SLAM ~ DIP-êîðïóñ ç îêèñëó àëþì³í³þ ç îäíîøàðîâîþ ìåòàë³çàö³ºþ small-outline ~ ìàëîãàáàðèòíèé êîðïóñ, êîðïóñ òèïó SO small-outline transistor ~ ìàëîãàáàðèòíèé êîðïóñ òðàíçèñòîðíîãî òèïó, êîðïóñ òèïó SOT SMD ~ êîðïóñ äëÿ (êîìïîíåíò³â) ïîâåðõíåâîãî ìîíòàæó tape automated bonding ~ êðèñòàëîíîñ³é ó âèãëÿä³ âèð³çàíî¿ ä³ëÿíêè ñòð³÷êîâîãî íîñ³ÿ ç ãåðìåòèçîâàíèì êðèñòàëîì transistor-outline ~ êîðïóñ òðàíçèñòîðíîãî òèïó, êîðïóñ òèïó ÒÎ window-frame ~ êîðïóñ ç îïòè÷íèì â³êíîì zigzag-in-line [ZIL] ~ ïëîñêèé êîðïóñ ³ç çèãçàãîïîä³áíî ðîçì³ùåíèìè øòèðüêîâûìè âèâîäàìè packaging 1. ìîíòàæ â êîðïóñ³, êîðïóñóâàííÿ 2. çá³ðêà (³ ãåðìåòèçàö³ÿ) beam-lead interconnect ~ çá³ðêà ²Ñ ç áàëêîâèìè âèâîäàìè íà ïëàò³ beamless tape ~ çá³ðêà ²Ñ íà ñòð³÷êîâîìó íîñ³¿ áåç áàëî÷íèõ âèâîä³â beam tape ~ çá³ðêà ²Ñ íà ñòð³÷êîâîìó íîñ³¿ ç áàëêîâèìè âèâîäàìè bulk ~ óïàêîâêà (êîìïîíåíò³â) ðîçñèïîì (íàïð. â ïàêåòàõ) chip ~ çá³ðêà êðèñòàë³â fluidized-bed ~ ãåðìåòèçàö³ÿ â ïñåâäîçð³äæåíîìó øàð³ high-density ~ çá³ðêà âèñîêî¿ ãóñòèíè hybrid ~ çá³ðêà Ã²Ñ integrated-circuit ~ çá³ðêà ²Ñ plastic ~ çá³ðêà â ïëàñòìàñîâèé êîðïóñ static protective ~ àíòèñòàòè÷íà óïàêîâêà packet ïàêåò; ïà÷êà charge ~ çàðÿäíèé ïàêåò packing 1. óïàêîâêà 2. óù³ëüíåííÿ 3. êîðïóñ (äèâ. ò-æ ðàñê, ðàñkage) blister ~ óïàêîâêà â ïëàñòìàñîâó (ïðîçîðó) ïë³âêó close [dense] ~ ù³ëüíà óïàêóâàííÿ high-density ~ óïàêîâêà âèñîêî¿ ãóñòèíè skin ~ óïàêîâêà â ïëàñòìàñîâó (ïðîçîðó) ïë³âêó tight ~ ù³ëüíà óïàêîâêà water-tight ~ âîäîíåïðîíèêíå óù³ëüíåííÿ pad êîíòàêòíèé ìàéäàí÷èê; ñòîâï÷èêîâèé âèâ³ä, êîíòàêòíèé ñòîâï÷èê (äèâ. ò-æ bump)
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par bond(ing)~ êîíòàêòíèé ìàéäàí÷èê; ñòîâï÷èêîâèé âèâ³ä, êîíòàêòíèé ñòîâï÷èê chip-bonding [chip-connection] ~ ìàéäàí÷èê äëÿ ïðèºäíàííÿ êðèñòàëà conductive [connection, contact] ~ êîíòàêòíèé ìàéäàí÷èê; ñòîâï÷èêîâèé âèâ³ä, êîíòàêòíèé ñòîâï÷èê die ~ ìàéäàí÷èê äëÿ ïðèºäíàííÿ êðèñòàëà electrode [interconnect] ~ êîíòàêòíèé ìàéäàí÷èê; ñòîâï÷èêîâèé âèâ³ä, êîíòàêòíèé ñòîâï÷èê I/O ~s âõ³äí³ ³ âèõ³äí³ êîíòàêòí³ ñòîâï÷èêè lead-connection ~ ìàéäàí÷èê äëÿ ïðèºäíàííÿ âèâîä³â metallized ~ êîíòàêòíèé ìàéäàí÷èê; ñòîâï÷èêîâèé âèâ³ä, êîíòàêòíèé ñòîâï÷èê mounting ~ ìàéäàí÷èê äëÿ ìîíòàæó (íàïð. êðèñòàëà) probe contact ~ êîíòðîëüíèé êîíòàêòíèé ìàéäàí÷èê (²Ñ) support ~ ìàéäàí÷èê äëÿ ìîíòàæó (íàïð. êðèñòàëà) terminal ~ êîíòàêòíèé ìàéäàí÷èê test ~ êîíòàêòíèé ìàéäàí÷èê äëÿ (çîíäîâèõ) âèïðîáóâàíü wiring ~ ìîíòàæíèé ìàéäàí÷èê “paddle” çàâàíòàæóâàëüíèé ïðèñòð³é äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí pair: Cooper ~ êóïåð³âñüêà ïàðà Darlington ~ ïàðà Äàðë³íãòîíà electron-hole ~ åëåêòðîííî-ä³ðêîâà ïàðà Frenkel [interstitial-vacancy] ~ ïàðà äîì³øêà óïðîâàäæåííÿ–âàêàíñ³ÿ, äåôåêò ïî Ôðåíêåëþ pairing: electron ~ óòâîðåííÿ åëåêòðîííèõ ïàð (â íàäïðîâ³äíèêàõ) panel 1. äðóêîâàíà ïëàòà 2. ïàíåëü; ïóëüò (äèâ. ò-æ board) back ~ îá’ºäíóâàëüíà äðóêîâàíà ïëàòà back-wired ~ äðóêîâàíà ïëàòà ³ç çàäíüîþ ìîíòàæíîþ ïîâåðõíåþ wire-wrapped ~ ïàíåëü äëÿ ç’ºäíàííÿ êîìïîíåíò³â ìåòîäîì íàêðóòêè pantograph ïàíòîãðàô pantography ïàíòîãðàô³ÿ laser ~ ëàçåðíà ïàíòîãðàô³ÿ (äëÿ ôîðìóâàííÿ ç’ºäíàíü ç âèêîðèñòàííÿì ìåòàëîîðãàí³÷íî¿ ñïîëóêè)
paralleling 1. ðåçåðâóâàííÿ 2. ïàðàëåëüíå âêëþ÷åííÿ passive ~ ðåçåðâóâàííÿ ç â³äêëþ÷åííÿì åëåìåíòó, ùî â³äìîâèâ parallelism: 4 sec arc ~ ïëîñêîïàðàëåëüí³ñòü (íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè), âèì³ðþâàíà ïðîãèíàííÿì ïîâåðõí³ ç êóòîì, ð³âíèì 4 ñ parameter ïàðàìåòð distributed ~s ðîçïîä³ëåí³ ïàðàìåòðè ellipsometric ~s åë³ïñîìåòðè÷í³ ïàðàìåòðè fitting ~ ïàðàìåòð, ùî ï³äãàíÿºòüñÿ g~ s g-ïàðàìåòðû (òðàíçèñòîðà) hybrid ~s h-ïàðàìåòðû, ã³áðèäí³ ïàðàìåòðè (òðàíçèñòîðà) large-signal ~s ïàðàìåòðè â ðåæèì³ âåëèêîãî ñèãíàëó lattice ~ ïàðàìåòð [ïîñò³éíà] êðèñòàë³÷íèõ ãðàòîê lumped ~s çîñåðåäæåí³ ïàðàìåòðè matrix ~s ìàòðè÷í³ ïàðàìåòðè physical ~ åëåêòðîô³çè÷íèé ïàðàìåòð scaling ~ ìàñøòàáíèé êîåô³ö³ºíò, êîåô³ö³ºíò ìàñøòàáóâàííÿ small-signal ~s ïàðàìåòðè â ðåæèì³ ìàëîãî ñèãíàëó, ìàëîñèãíàëüí³ ïàðàìåòðè static ~ ñòàòè÷íèé ïàðàìåòð technological ~s õàðàêòåðèñòèêè òåõíîëîã³÷íîãî ïðîöåñó transistor ~s ïàðàìåòðè òðàíçèñòîðà y ~s ó-ïàðàìåòðè (òðàíçèñòîðà) z ~s z-ïàðàìåòðû (òðàíçèñòîðà) parametron ïàðàìåòðîí (äâîõâèâ³äíèé êðèîãåííèé ïðèëàä ç äæîçåôñîí³âñüêèì ïåðåõîäîì) quantum flux ~ ïàðàìåòðîí ç êâàíòîâèì ïîòîêîì parasitics 1. ïàðàçèòí³ åëåìåíòè; ïàðàçèòí³ êîìïîíåíòè 2. ïàðàçèòí³ ÿâèùà active ~ àêòèâí³ ïàðàçèòí³ åëåìåíòè (íàïð. òðàíçèñòîðè) capacitor ~ ïàðàçèòí³ êîíäåíñàòîðè passive ~ ïàñèâí³ ïàðàçèòí³ åëåìåíòè resistor ~ ïàðàçèòí³ ðåçèñòîðè paratronics ïàðàòðîí³êà (ïîêîë³ííÿ åëåêòðîííèõ êîìïîíåíò³â, íàñòóïíå çà ì³êðîåëåêòðîí³êîþ íà êðåìí³¿) parent âèñõ³äíèé ìàòåð³àë part 1. êîìïîíåíò; åëåìåíò 2. äåòàëü active ~ àêòèâíèé êîìïîíåíò; àêòèâíèé åëåìåíò
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pat bit-slice ~ ñåêö³îíîâàíèé ì³êðîïðîöåñîð block-structured ~ ²Ñ ç áëîêîâîþ ñòðóêòóðîþ commonality-type ~ ñòàíäàðòíèé êîìïîíåíò complementary ~ êîìïëåìåíòàðíèé ïðèëàä component ~ 1. äèñêðåòíèé êîìïîíåíò 2. ³íòåãðàëüíèé êîìïîíåíò custom ~ çàìîâëåíèé ïðèëàä; ñïåö³àë³çîâàíèé ïðèëàä Darlington ~ ïàðà Äàðë³íãòîíà dedicated standard ~ ïðèëàä, ïðèçíà÷åíèé äëÿ âæèâàííÿ â ïåâí³é àïàðàòóð³ discrete ~ äèñêðåòíèé êîìïîíåíò electronic ~ åëåêòðîííèé êîìïîíåíò functional ~ ôóíêö³îíàëüíèé ïðèëàä integrated ~ 1. ³íòåãðàëüíèé êîìïîíåíò 2. ³íòåãðàëüíà ñõåìà, ²Ñ large-scale integrated ~ 1. êîìïîíåíò Â²Ñ 2. âåëèêà ³íòåãðàëüíà ñõåìà, Â²Ñ low-volume ~ 1. êîìïîíåíò, ùî âèïóñêàºòüñÿ ìàëèìè ïàðò³ÿìè 2. ìàëîãàáàðèòíèé êîìïîíåíò out-of-tolerance ~ êîìïîíåíò ç ïåðåâèùåíèì äîïóñêîì (äîçâîëîì) proprietary ~ êîìïîíåíò âëàñíî¿ ðîçðîáêè Schottky ~ 1. ä³îä Øîòê³ 2. ²Ñ íà ÒÒË ç ä³îäàìè Øîòê³, òðàíçèñòîðíî-òðàíçèñòîðíà ëîã³÷íà ²Ñ ç ä³îäàìè Øîòê³, ÒÒËØ ²Ñ semiconductor electronic ~ íàï³âïðîâ³äíèêîâèé êîìïîíåíò; íàï³âïðîâ³äíèêîâèé ïðèëàä semicustom ~ íàï³âçàìîâëåíèé ïðèëàä; íàï³âçàìîâëåíà ²Ñ spare ~ çàïàñíèé åëåìåíò standard ~ ñòàíäàðòíèé êîìïîíåíò surface-àñoustic-wave ~ êîìïîíåíò íà ÏÀÕ particle ÷àñòèíêà alpha ~ àëüôà [á]-÷àñòèíêà beta ~ áåòà [â]-÷àñòèíêà charged ~ çàðÿäæåíà ÷àñòèíêà surface ~ ÷àñòèíêà íà ïîâåðõí³, ïîâåðõíåâà ÷àñòèíêà participates äèñïåðñíèé ìàòåð³àë partition 1. ðîçä³ëåííÿ; ðîç÷ëåíîâóâàííÿ; äåêîìïîçèö³ÿ, ðîçáèòòÿ (íàïð. ìàòðèö³) | ðîçä³ëÿòè; ðîç÷ëåíîâóâàòè; ðîçáèâàòè 2. ïåðåãîðîäêà functional ~ ôóíêö³îíàëüíå ðîçáèòòÿ memory ~ ðîçáèòòÿ ïàì’ÿò³
system ~ ðîçáèòòÿ [äåêîìïîçèö³ÿ] ñèñòåìè (íà ²Ñ) pass: zone ~ ïðîõ³ä çîíè passivation ïàñèâàö³ÿ, ïàñèâàö³ÿ glass ~ ïàñèâàö³ÿ ñêëîì hydrogen ~ ïàñèâàö³ÿ â³äïàëîì ó âîäí³ integrated-circuit ~ ïàñèâàö³ÿ (ïîâåðõí³) ²Ñ passive 1. ïàñèâíèé êîìïîíåíò 2. ïàñèâíèé SMD [surface-mount] ~ ïàñèâíèé êîìïîíåíò äëÿ ïîâåðõíåâîãî ìîíòàæó paste 1. ïàñòà | íàíîñèòè ïàñòó 2. òîâñòîïë³âêîâà êîìïîçèö³ÿ base-metal ~ ïàñòà íà îñíîâ³ íåáëàãîðîäíèõ ìåòàë³â conductor ~ ïðîâ³äíà ïàñòà dielectric ~ ïàñòà äëÿ (ôîðìóâàííÿ) ä³åëåêòðè÷íèõ øàð³â, ä³åëåêòðè÷íà ïàñòà glass ~ ñêëîóòâîðþþ÷à ïàñòà gold ~ ïàñòà íà îñíîâ³ çîëîòà noble-metal ~ ïàñòà íà îñíîâ³ áëàãîðîäíèõ ìåòàë³â printed conductor ~ ïðîâ³äíà ïàñòà äëÿ òðàôàðåòíîãî äðóêó refractory-metal ~ ïàñòà íà îñíîâ³ òóãîïëàâêîãî ìåòàëó resistive ~ ðåçèñòèâíà ïàñòà resistor ~ ïàñòà äëÿ ôîðìóâàííÿ ðåçèñòîð³â screen printable ~ ïàñòà äëÿ òðàôàðåòíîãî äðóêó solder ~ ïàñòà ïðèïîþ thick-film ~ 1. òîâñòîïë³âêîâà ïàñòà 2. òîâñòîïë³âêîâà êîìïîçèö³ÿ thixotropic ~ ò³êñîòðîïíà ïàñòà path 1. ñòðóìîïðîâ³äíà äîð³æêà; ì³æç’ºäíàííÿ2. äîâæèíà ïðîá³ãó, ïðîá³ã branch-free ~ øëÿõ áåç ðîçãàëóæåííÿ (ïðè ïðîåêòóâàíí³ òîïîëî㳿 ²Ñ) conducting [conductive conductor] ~ ñòðóìîïðîâ³äíà äîð³æêà; ì³æç’ºäíàííÿ critical ~ êðèòè÷íèé øëÿõ (âèçíà÷àþ÷èé òèì÷àñîâ³ õàðàêòåðèñòèêè ²Ñ) data ~ ³íôîðìàö³éíèé êàíàë failure ~ øëÿõ ïîøèðåííÿ ñèãíàëó íåñïðàâíîñò³ free ~ äîâæèíà â³ëüíîãî ïðîá³ãó, ïðîá³ã leakage ~ êàíàë âèòîêó (íàïð. ñòðóìó) routing ~ íàïðÿì ìàðøðóòèçàö³¿ (â òîïîëî㳿 ²Ñ)
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pat source-to-drain ~ ä³ëÿíêà ì³æ ñòîêîì ³ âèòîêîì thermal-conductance ~ êàíàë òåïëîâ³äâîäó time-critical signal ~ êðèòè÷íèé øëÿõ (øëÿõ ïðîõîäæåííÿ ñèãíàëó ç ìàêñèìàëüíîþ çàòðèìêîþ) tunneling ~ äîâæèíà òóíåëþâàííÿ wiring ~ øëÿõ òðàñóâàííÿ, ïðîñò³ð ì³æç’ºäíàíü worst-case timing ~ êðèòè÷íèé øëÿõ (ïî òèì÷àñîâèõ ïàðàìåòðàõ) ç ðîçêèäîì íà ÿêíàéã³ðøèé âèïàäîê pattern 1. ìàëþíîê; çîáðàæåííÿ; îáðàç; ðåëüºô | ôîðìóâàòè ìàëþíîê; ôîðìóâàòè çîáðàæåííÿ; ôîðìóâàòè ðåëüºô; ñòðóêòóðóâàòè 2. êîíô³ãóðàö³ÿ, ôîðìà 3. ñòðóêòóðà (íàïð. íà ôîòîøàáëîí³) (äèâ. ò-æ image, structure) channel ~ ôîðìà êàíàëó chip ~ ðåëüºô êðèñòàëà circuit ~ ìàëþíîê ñõåìè; ðåëüºô ñõåìè computer-generated ~ ìàëþíîê, ðîçðîáëåíèé çà äîïîìîãîþ ÅÎÌ conductive [conductor] ~ ìàëþíîê ì³æç’ºäíàíü contact ~ 1. ìàëþíîê (ðîçòàøóâàííÿ) êîíòàêò³â 2. ôîðìà êîíòàêò³â contiguous-disk propagation ~ ïðîñóâàþ÷à ñòðóêòóðà íà äîòè÷íèõ äèñêàõ customized metallization ~ ìàëþíîê ñïåö³àë³çîâàíî¿ (ñïîëó÷íî¿) ìåòàë³çàö³¿ discretionary wiring ~ ìàëþíîê âèáîð÷èõ ç’ºäíàíü dislocation ~ ñòðóêòóðà äèñëîêàö³¿ domain ~ äîìåííà ñòðóêòóðà dopant ~ ðåëüºô ðîçïîä³ëó äîì³øêè electron-beam ~ 1. êîíô³ãóðàö³ÿ åëåêòðîííîãî ïðîìåíÿ 2. ñòðóêòóðà, ñôîðìîâàíà åëåêòðîííèì ïðîìåíåì electron diffraction ~ êàðòèíà åëåêòðîííî¿ äèôðàêö³¿ emitter ~ 1. êîíô³ãóðàö³ÿ åì³òåðà 2. ñòðóêòóðà åì³òåðà error-free layout ~ áåçäåôåêòíå òîïîëîã³÷íå êðåñëåííÿ etch(ed)~ ô³ãóðà òðàâëåííÿ fine-line [fine-linewidth] ~ ìàëþíîê ç âèñîêèì äîçâîëîì (äîïóñêîì), ìàëþíîê ç åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â
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fixed-interconnection ~ ìàëþíîê ô³êñîâàíèõ ì³æç’ºäíàíü gate ~ ôîðìà çàòâîðà geometric ~ 1. êîíô³ãóðàö³ÿ, ôîðìà 2. ãåîìåòðè÷íà ô³ãóðà growth ~ ôîðìà ðîñòó (êðèñòàë³â) high-aspect ratio ~ ðåëüºô ç âèñîêèì àêòèâíèì ÷èñëîì insulation ~ êîíô³ãóðàö³ÿ ³çîëþþ÷èõ îáëàñòåé integrated-circuit ~ 1. ðåëüºô ²Ñ 2. ñòðóêòóðà ²Ñ, ³íòåãðàëüíà ñòðóêòóðà interconnection mask ~ ìàëþíîê øàáëîíà äëÿ ôîðìóâàííÿ ì³æç’ºäíàíü layout ~ òîïîëîã³÷íå êðåñëåííÿ lead ~ 1. ìàëþíîê ðîçòàøóâàííÿ ïðîâ³äíèê³â 2. ôîðìà âèâîä³â mask ~ ìàëþíîê øàáëîíà; ìàëþíîê ìàñêè masked ðårmalloy ~ ìàñêîâàíèé ìàëþíîê ïåðìàëîºâèõ àïë³êàö³é masking ~ ìàñêóþ÷èé ìàëþíîê (íàïð. îêñèäíîãî øàðó) master ~ ìàëþíîê åòàëîííîãî ôîòîøàáëîíó measurement ~ ìàëþíîê ðîçòàøóâàííÿ âèì³ðþâàëüíèõ çîíä³â (íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³) metal-finger ~ ìàëþíîê ìåòàëåâèõ âèâîä³â (íà ñòð³÷êîâîìó íîñ³¿ ç ïàâó÷êîâèìè âèâîäàìè) multiple ~ ìóëüòèïë³êóâàííÿ çîáðàæåííÿ optical ~ îïòè÷íå çîáðàæåííÿ oxide ~ 1. ìàëþíîê îêñèäíîãî øàðó 2. îêñèäíà ñòðóêòóðà permalloy propagation ~ ïåðìàëîºâà ïðîñóâàþ÷à ñòðóêòóðà photographic emulsion(-mask)~ ìàëþíîê åëåìåíò³â íà åìóëüñèâíîìó ôîòîøàáëîí³ photoresist (film) [photoresist mask] ~ ìàëþíîê øàðó ôîòîðåçèñòà process evaluation and control ~ òåñòîâà ñòðóêòóðà äëÿ êîíòðîëþ òåõíîëîã³÷íîãî ïðîöåñó programmed-interconnection ~ ìàëþíîê ïðîãðàìîâàíèõ ì³æç’ºäíàíü regular ~ ðåãóëÿðíà ñòðóêòóðà repetitive ~ 1. ìóëüòèïë³êîâàíå çîáðàæåííÿ 2. ðåãóëÿðíà ñòðóêòóðà reticle ~ 1. ìàëþíîê ïðîì³æíîãî ôîòîøàáëîíó 2. ìàëþíîê ïðîì³æíîãî ôîòîîðèã³íàëó
per routing ~ ìàëþíîê ç’ºäíàíü; ìàëþíîê ðîçâîäêè shifting test ~ çñîâóþ÷à òåñòîâà ïîñë³äîâí³ñòü silicon ~ 1. ìàëþíîê, ñôîðìîâàíèé â êðåìí³ºâ³é ï³äêëàäö³ 2. êðåìí³ºâà ñòðóêòóðà step coverage ~ òåñòîâà ñòðóêòóðà äëÿ ïåðåâ³ðêè ÿêîñò³ íàíåñåííÿ ïîêðèòò³â íà ñõîäèíêè striation ~ çîíàðíà ñòðóêòóðà subisolation ~ ñòðóêòóðà, ðîçòàøîâàíà ï³ä ³çîëþþ÷èìè îáëàñòÿìè sunken îõide ~ 1. ìàëþíîê ïîãëèáëåíîãî îêñèäíîãî øàðó 2. ïîãëèáëåíà îêñèäíà ñòðóêòóðà surface relief ~ ðåëüºô ïîâåðõí³ test ~ òåñòîâà ñòðóêòóðà; òåñòîâà ïîñë³äîâí³ñòü thick-film ~ 1. ìàëþíîê òîâñòèõ ïë³âîê 2. òîâñòîïë³âêîâà ñòðóêòóðà thin-film ~ 1. ìàëþíîê òîíêèõ ïë³âîê 2. òîíêîïë³âêîâà ñòðóêòóðà transistor ~ çîáðàæåííÿ òðàíçèñòîðà wafer ~ ìàëþíîê ñòðóêòóð íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè wiring ~ ìàëþíîê ç’ºäíàíü; ìàëþíîê ðîçâîäêè patterning 1. ôîðìóâàííÿ ìàëþíêà; ôîðìóâàííÿ çîáðàæåííÿ; ôîðìóâàííÿ ðåëüºôó 2. ñòðóêòóðèçàö³ÿ array ~ ôîðìóâàííÿ ìàëþíêà (ç’ºäíàíü) íà áàçîâîìó ìàòðè÷íîìó êðèñòàë³ chip ~ ôîðìóâàííÿ ðåëüºôó íà êðèñòàë³ ²Ñ; ôîðìóâàííÿ ìàëþíêà íà êðèñòàë³ ²Ñ dry ~ ñóõà ì³êðîñòðóêòóðèçàö³ÿ electron-beam ~ ôîðìóâàííÿ ìàëþíêà ìåòîäîì åëåêòðî-ïðîìåíåâî¿ ë³òîãðàô³¿ fine-line ~ 1. ôîðìóâàííÿ ìàëþíêà ç âèñîêèì äîçâîëîì, ôîðìóâàííÿ ìàëþíêà ç åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â 2. ì³êðîñòðóêòóðèçàö³ÿ ç âèñîêèì äîçâîëîì lift-off ~ ôîðìóâàííÿ ìàëþíêà ìåòîäîì çâîðîòíî¿ ôîòîë³òîãðàô³¿ metal ~ ì³êðîñòðóêòóðèçàö³ÿ ìåòàëåâîãî øàðó microlithographic ~ ôîðìóâàííÿ ìàëþíêà ìåòîäîì ë³òîãðàô³¿ nanometer ~ ôîðìóâàííÿ ìàëþíêà ç åëåìåíòàìè íàíîìåòðîâîãî ðîçì³ðó
optical ~ ôîðìóâàííÿ ìàëþíêà ìåòîäîì ôîòîë³òîãðàô³¿ resist ~ ôîðìóâàííÿ ìàëþíêà â øàð³ ôîòîðåçèñòà; ôîðìóâàííÿ ðåëüºôó â øàð³ ðåçèñòà resistless ~ ôîðìóâàííÿ ìàëþíêà áåç âèêîðèñòàííÿ ôîòîðåçèñòà subfflicron ~ ôîðìóâàííÿ ìàëþíêà ç åëåìåíòàìè ñóáì³êðîííîãî ðîçì³ðó X-ray ~ ôîðìóâàííÿ ìàëþíêà ìåòîäîì ðåíòãåí³âñüêî¿ ë³òîãðàô³¿ p-doped ëåãîâàíèé àêöåïòîðíîþ äîì³øêîþ pedestal 1. îñíîâà 2. ñòîâï÷èêîâèé âèâ³ä, êîíòàêòíèé ñòîâï÷èê (äèâ. ò-æ bump, pad) peel: bond ~ â³äøàðîâóâàííÿ (òåðìîêîìïðåñ³éíîãî) ç’ºäíàííÿ orange ~ ïîâåðõíÿ (ç äåôåêòàìè) òèïó «àïåëüñèíîâà øê³ðêà» pel åëåìåíò çîáðàæåííÿ pellet: doping ~ ëåãóþ÷à òàáëåòêà (äëÿ ôîðìóâàííÿ ëîêàëüíèõ ëåãîâàíèõ îáëàñòåé) integrated-circuit ~ êðèñòàë ²Ñ metallic ~ ìåòàëåâèé øàð (îñàäæåíèé íà êîíòàêòíîìó ìàéäàí÷èêó) semiconductor ~ êðèñòàë íàï³âïðîâ³äíèêîâî¿ ²Ñ pelletizer óñòàíîâêà äëÿ ïðåñóâàííÿ òàáëåòîê pellicle (òîíêà) ïë³âêà boron-nitride ~ ïë³âêà í³òðèäó áîðó pen: light ~ ñâ³òëîâå ïåðî pencil: vacuum ~ âàêóóìíèé ï³íöåò Pentawatl ô³ðì. ïëîñêèé êîðïóñ ç ï’ÿòüìà âèâîäàìè äëÿ ìîãóòí³õ ë³í³éíèõ ²Ñ pentoxide: arsenic ~ ïåíòàîêñèä ìèø’ÿêó, As2O5 phosphorus ~ ïåíòàîêñèä ôîñôîðó, P205 Ta ~ ïåíòàîêñèä òàíòàëó, Òà2Î5 penumbra: image ~ ðîçìèòå çîáðàæåííÿ (íàïð. íà êðàÿõ ôîòîðåçèñòà) p-epi åï³òàêñ³àëüíèé øàð (ç åëåêòðîïðîâ³äí³ñòþ) ð-òèïó percolation 1. ïðîñâ³÷óâàííÿ; ïðîíèêíåííÿ 2. ô³ëüòðàö³ÿ perfection:
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pho crystal [crystalline] ~ êðèñòàëîãðàô³÷íà äîñêîíàë³ñòü lattice ~ äîñêîíàë³ñòü êðèñòàë³÷íèõ ãðàòîê performance 1. (ðîáî÷³) õàðàêòåðèñòèêè; ïàðàìåòðè 2. ðîáîòà; ôóíêö³îíóâàííÿ 3. ïðîäóêòèâí³ñòü electrical ~ åëåêòðè÷í³ õàðàêòåðèñòèêè (²Ñ) high-frequency ~ âèñîêî÷àñòîòí³ õàðàêòåðèñòèêè high-speed ~ øâèäêîä³ÿ integrated-circuit ~ 1. õàðàêòåðèñòèêè ²Ñ 2. ðîáîòà ²Ñ micropower ~ ðîáîòà â ä³àïàçîí³ ì³êðîâàòà multifunctional ~ áàãàòîôóíêö³îíàëüí³ñòü speed ~ øâèäêîä³ÿ subnanosecond ~ ñóáíàíîñåêóíäíà øâèäêîä³ÿ temperature-tracking ~ ðîáîòà ç òåìïåðàòóðíîþ êîìïåíñàö³ºþ transient ~ ïåðåõ³äíà õàðàêòåðèñòèêà period: delay ~ ÷àñ çàòðèìêè off ~ ÷àñ âèêëþ÷åííÿ; ïåð³îä ðîçìèêàííÿ on ~ ÷àñ âêëþ÷åííÿ; ïåð³îä çàìèêàííÿ switching ~ ÷àñ ïåðåìèêàííÿ transient ~ ïîñò³éíà ÷àñó periodicity ðåãóëÿðí³ñòü, ïåð³îäè÷í³ñòü (íàïð. êðèñòàë³÷íèõ ãðàòîê) peripheral 1. ïåðèôåð³éíà ²Ñ 2. ïåðèôåð³éíèé; êðàéîâèé permalloy ïåðìàëîé electrodeposited ~ åëåêòðîîñàäæåíèé ïåðìàëîé evaporated ~ íàïèëåíèé ïåðìàëîé permanency: mark ~ ì³öí³ñòü ìàðê³ðîâêè permeability ìàãí³òíà ïðîíèêí³ñòü dielectric ~ ä³åëåêòðè÷íà ïðîíèêí³ñòü permittivity ä³åëåêòðè÷íà ïðîíèêí³ñòü peroxide ïåðîêñèä âîäíþ, Í2Î2 hydrogen ~ ïåðîêñèä âîäíþ, H2O2 personalization: component ~ ñïåö³àë³çàö³ÿ êîìïîíåíòó (íàïð. ²Ñ) double-layer metal ~ ñïåö³àë³çàö³ÿ ²Ñ ç âèêîðèñòàííÿì äâîøàðîâî¿ ìåòàë³çàö³¿ gate array ~ ñïåö³àë³çàö³ÿ áàçîâîãî ìàòðè÷íîãî êðèñòàëà persulfate ïåðñóëüôàò ammonium ~ ïåðñóëüôàò àìîí³ÿ, (NH4)2S2O8
phase 1. ôàçà 2. åòàï; ñòàä³ÿ à to ~ into ðîçïî÷èíàòè ðîçðîáêó; ðîçïî÷èíàòè âèðîáíèöòâî; to ~ out çí³ìàòè ç âèðîáíèöòâà architectural design ~ åòàï àðõ³òåêòóðíîãî ïðîåêòóâàííÿ behavioral design ~ åòàï ïîâåä³íêîâîãî ïðîåêòóâàííÿ (íà ÿêîìó âèçíà÷àºòüñÿ ïîâåä³íêà ñõåìè â ö³ëîìó) cholesteric ~ õîëåñòåðè÷íà ôàçà (ð³äêîãî êðèñòàëà) design ~ åòàï ïðîåêòóâàííÿ functional design ~ åòàï ôóíêö³îíàëüíîãî ïðîåêòóâàííÿ gas (eous) ~ ãàçîâà ôàçà heterogeneous ~ ãåòåðîãåííà ôàçà liquid ~ ð³äêà ôàçà manufacturing design ~ åòàï òåõíîëîã³÷íîãî ïðîåêòóâàííÿ, åòàï ïðîåêòóâàííÿ òåõíîëî㳿 nematic ~ íåìàòè÷íà ôàçà (ð³äêîãî êðèñòàëà) physical design ~ åòàï ô³çè÷íîãî ïðîåêòóâàííÿ (âêëþ÷àþ÷èé âèçíà÷åííÿ äèôóç³éíîãî ïðîô³ëþ ³ òîïîëîã³þ) software engineering ~ åòàï ïðîåêòóâàííÿ, ùî âêëþ÷ຠñòâîðåííÿ ìàòåìàòè÷íîãî çàáåçïå÷åííÿ (äëÿ ²Ñ) solid ~ òâåðäà ôàçà vapor ~ ïàðîâà ôàçà vitrifiable ~ ñêëîïîä³áíà ôàçà (íàïð. òîâñòîïë³âêîâî¿ ïàñòè) philosophy: circuit ~ òåîð³ÿ ê³ë design ~ ïðèíöèïè ïðîåêòóâàííÿ engineering ~ òåõí³÷í³ ïðèíöèïè phosphene ôîñôåí, ÐÍ4 phosphide ôîñô³ä boron ~ ôîñô³ä áîðó, ÂÐ gallium ~ ôîñô³ä ãàë³þ, GaP indium ~ ôîñô³ä ³íä³þ, InP phosphine ôîñô³í, ÐÍ3 photo ôîòîãðàô³ÿ, ôîòîçí³ìîê scanning electron microscope ~ ôîòîãðàô³ÿ çîáðàæåííÿ â ðàñòðîâîìó åëåêòðîííîìó ì³êðîñêîï³ photoablation: laser ~ ëàçåðíà ôîòîàáëÿö³ÿ photoblank ñêëÿíà ïëàñòèíà äëÿ ôîòîøàáëîíó
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pho photocathode ôîòîêàòîä negative-electron-affinity ~ ôîòîêàòîä ç íåãàòèâíîþ åëåêòðîííîþ ñïîð³äíåí³ñòþ photocell 1. ôîòîãàëüâàí³÷íèé åëåìåíò 2. ôîòîä³îä 3. ôîòîðåçèñòîð 4. ôîòîòðàíçèñòîð photocomposer ôîòîíàá³ðíà ìàøèíà photocomposition ôîòîíàá³ð photoconductivity ôîòîïðîâ³äí³ñòü photoconductor ìàòåð³àë ç ôîòîïðîâ³äí³ñòþ photocopy ôîòîêîï³ÿ | ôîòîêîï³þâàòè photocoupler îïòðîí, îïòîïàðà photocoupling îïòðîííèé çâ’ÿçîê photodecomposition ôîòîñòèìóëüîâàíå ðîçêëàäàííÿ photodeposition îñàäæåííÿ ç âèêîðèñòàííÿì ôîòîõ³ì³÷íèõ ðåàêö³é, ôîòîñòèìóëüîâàíå îñàäæåííÿ UV-~ îñàäæåííÿ ï³ä 䳺þ ÓÔ-îïðîì³íåííÿ photodetector ôîòîïðèéìà÷ photodiode ôîòîä³îä (äèâ. ò-æ diode) superlattice ~ ôîòîä³îä íà íàäãðàòö³ photodissociation ôîòîäèñîö³àö³ÿ, ôîòîðîçêëàäàííÿ gas-phase ~ ãàçîôàçíà ôîòîäèñîö³àö³ÿ photoelectrochemistry ôîòîåëåêòðîõ³ì³ÿ photoelectron: spurious ~s ïàðàçèòí³ ôîòîåëåêòðîíè (ïñóþ÷³ ïðèõîâàíå çîáðàæåííÿ) photoemulsion 1. ôîòîåìóëüñ³ÿ, ôîòîðåçèñò 2. åìóëüñèâíèé ôîòîøàáëîí photoengraving 1. ôîòîë³òîãðàô³ÿ, îïòè÷íà ë³òîãðàô³ÿ 2. ôîòîãðàâ³þâàííÿ photoepitaxy ôîòîõ³ì³÷íà åï³òàêñ³ÿ photoetching ôîðìóâàííÿ ìàëþíêà ìåòîäîì ôîòîë³òîãðàô³¿; òîé, ùî ôîòîòðàâëåííÿ electrochemical ~ åëåêòðîõ³ì³÷íå òðàâëåííÿ ç îïòè÷íèì ñòèìóëþâàííÿì pholoexcitation ôîòîçáóäæåííÿ photoexposition ôîòîåêñïîíóâàííÿ, îïòè÷íå åêñïîíóâàííÿ photofabrication 1. âèãîòîâëåííÿ ²Ñ ìåòîäîì ôîòîë³òîãðàô³¿ 2. ôîòîõ³ì³÷íà îáðîáêà photofragmentation ôîòîäèñîö³àö³ÿ, ôîòîðîçêëàäàííÿ UV ~ ôîòîäèñîö³àö³ÿ ï³ä 䳺þ ÓÔâèïðîì³íþâàííÿ photograph ôîòîãðàô³ÿ, ôîòîçí³ìîê photography ôîòîãðàôóâàííÿ, ôîòîãðàôóâàííÿ; ôîòîêîï³þâàííÿ
step-and-repeal ~ ïîñë³äîâíà êðîêîâà ôîòîìóëüòèïë³êàö³ÿ thermal ~ òåðìîãðàô³ÿ, ôîòîãðàôóâàííÿ â ²×-ä³àïàçîí³ photoimaging ôîòîë³òîãðàô³ÿ, îïòè÷íà ë³òîãðàô³ÿ photoionization ôîòî³îí³çàö³ÿ photolacquer ôîòîðåçèñò, ôîòîëàê photolayer ôîòî÷óòëèâèé [ñâ³òëî÷óòëèâèé] øàð photolithographies ôîòîë³òîãðàô³ÿ, îïòè÷íà ë³òîãðàô³ÿ photolithography ôîòîë³òîãðàô³ÿ, îïòè÷íà ë³òîãðàô³ÿ (äèâ. ò-æ lithography) conventional ~ ñòàíäàðòíà ôîòîë³òîãðàô³ÿ deep-UV contact ~ êîíòàêòíà ôîòîë³òîãðàô³ÿ ç äæåðåëîì äàëüíüîãî óëüòðàô³îëåòîâîãî âèïðîì³íþâàííÿ in-line ~ ôîòîë³òîãðàô³ÿ ç ïîòîêîâîþ îáðîáêîþ relaxed registration ~ íåïðåöèç³éíà ôîòîë³òîãðàô³ÿ 1:1 projection ~ ïðîåêö³éíà ôîòîë³òîãðàô³ÿ áåç ìàñøòàáóâàííÿ, ïðîåêö³éíà ôîòîë³òîãðàô³ÿ ç ìàñøòàáîì 1:1 photoluminescence ôîòîëþì³íåñöåíö³ÿ photolysis ôîòîë³ç gas-phase ~ ôîòîë³ç ãàçîâî¿ ôàçè, ãàçîôàçíèé ôîòîë³ç IR laser ~ ôîòîëèç çà äîïîìîãîþ ²×-ëàçåðà UV ~ ôîòîë³ç ï³ä 䳺þ ÓÔ-âèïðîì³íþâàííÿ, ÓÔ-ôîòîë³ç photomask ôîòîøàáëîí | ôîòîìàñêóâàòè (äèâ. ò-æ mask) contact ~ 1. êîíòàêòíèé ôîòîøàáëîí, ôîòîøàáëîí äëÿ êîíòàêòíî¿ ôîòîë³òîãðàô³¿ 2. ôîòîøàáëîí äëÿ ôîðìóâàííÿ êîíòàêò³â E-chrome ~ øàáëîí ç øàðîì õðîìó äëÿ åëåêòðîííî¿ ë³òîãðàô³¿ emulsion ~ åìóëüñèâíèé ôîòîøàáëîí gold-on-mylar ~ ôîòîøàáëîí ç ìàéëàðà ³ç çîëîòèì ïîêðèòòÿì ion-implanted ~ ³îííî-³ìïëàíòîâàíèé ôîòîøàáëîí microlitbography ~ ôîòîøàáëîí pellicled ~ ïë³âêîâèé ôîòîøàáëîí production ~ ðîáî÷èé ôîòîøàáëîí see-through ~ ïðîçîðèé ôîòîøàáëîí
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pic single-pattern ~ ôîòîøàáëîí ç îäí³ºþ ñòðóêòóðîþ, ôîòîîðèã³íàë ç îäí³ºþ ñòðóêòóðîþ transparent ~ ïðîçîðèé ôîòîøàáëîí work(ing)~ ðîáî÷èé ôîòîøàáëîí 1x ~ ôîòîøàáëîí, âèãîòîâëåíèé â ìàñøòàá³ 1:1 photomasking ôîòîìàñêóâàííÿ; ôîòîë³òîãðàô³ÿ, îïòè÷íà ë³òîãðàô³ÿ (äèâ. òæ lithography, masking) photomaster 1. ôîòîîðèã³íàë (ôîòîøàáëîíó) 2. åòàëîííèé ôîòîøàáëîí (äèâ. ò-æ master) intermediate ~ ïðîì³æíèé ôîòîîðèã³íàë; ïðîì³æíèé åòàëîííèé ôîòîøàáëîí photometer ôîòîìåòð³ÿ photomicrograph ì³êðîôîòîãðàô³ÿ, ì³êðîôîòîçí³ìîê scanning electron ~ ì³êðîôîòîãðàô³ÿ, îäåðæàíà çà äîïîìîãîþ ðàñòðîâîãî åëåêòðîííîãî ì³êðîñêîïà photomicrography ì³êðîôîòîçéîìêà, ì³êðîôîòîãðàôóâàííÿ photonics ôîòîí³êà photopatterning ôîðìóâàííÿ ìàëþíêà ìåòîäîì ôîòîë³òîãðàô³¿ photoplate ôîòîïëàñòèíà; ôîòîøàáëîí emulsion ~ ôîòîïëàñòèíà ç åìóëüñèâíèì øàðîì; åìóëüñèâíèé ôîòîøàáëîí turd-surface ~ çíîñîñò³éêèé ôîòîøàáëîí; ìåòàë³çîâàíèé ôîòîøàáëîí reticle ~ ïðîì³æíèé ôîòîøàáëîí photoplotter êîîðäèíàòîãðàô; ãðàô³÷íèé ïðèñòð³é photopolymer ôîòîïîë³ìåð photopolymerization ôîòîïîë³ìåðèçàö³ÿ photopositive ôîòîïîçèòèâíèé, ç ïîçèòèâíîþ ôîòîïðîâ³äí³ñòþ photoprocess 1. ôîòîë³òîãðàô³ÿ, îïòè÷íà ë³òîãðàô³ÿ | ïðîâîäèòè ôîòîë³òîãðàô³þ 2. ôîòîõ³ì³÷íà îáðîáêà | ïðîâîäèòè ôîòîõ³ì³÷íó îáðîáêó (äèâ. ò-æ lithography) photoprocessing 1. ôîòîë³òîãðàô³ÿ, îïòè÷íà ë³òîãðàô³ÿ 2. ôîòîõ³ì³÷íà îáðîáêà (äèâ. òæ lithography) dry-film ~ ôîòîë³òîãðàô³ÿ ³ç çàñòîñóâàííÿì ñóõîãî ïë³âêîâîãî ôîòîðåçèñòà via ~ âèãîòîâëåííÿ êð³çíèõ îòâîð³â ìåòîäîì ôîòîë³òîãðàô³¿ photoproduct ïðîäóêò ôîòîäèñîö³àö³¿ photoreader ôîòîåëåêòðè÷íèé ç÷èòóþ÷èé
ïðèñòð³é photoreduction ôîòîãðàôóâàííÿ ³ç çìåíøåííÿì çîáðàæåííÿ, ôîòîðåäóêóâàííÿ photorepeater ôîòîïîâòîðþâà÷, ôîòîøòàìï laser-metered ~ ôîòîïîâòîðþâà÷ ç ëàçåðíèì åêñïîíîìåòðîì photorepetilion ôîòîìóëüòèïë³êàö³ÿ, ôîòîìóëüòèïë³êóº photoresist ôîòîðåçèñò; ðåçèñò (äèâ. ò-æ resist) anticontamination ~ øàð ôîòîðåçèñòà, ïåðåøêîäæàþ÷èé çàáðóäíåííþ ïîâåðõí³ Azoplate ~ ôîòîðåçèñò ô³ðìè «Àçîïëåéò» (ÑØÀ) diazide ~ ä³àçèäíèé ôîòîðåçèñò double ~ äâîøàðîâèé ôîòîðåçèñò high performance ~ âèñîêî÷óòëèâèé ôîòîðåçèñò insoluble ~ íåðîç÷èííèé ôîòîðåçèñò Kodac carbon ~ ôîòîðåçèñò ç äîáàâêîþ âóãëåöþ ô³ðìè «Êîäàê» (ÑØÀ) masking ~ ôîòîðåçèñòíà ìàñêà, ôîòîðåçèñòíèé ìàñêóþ÷èé øàð negative(-type)~ íåãàòèâíèé ôîòîðåçèñò novolak ~ íîâîëà÷íèé ôîòîðåçèñò polymerized ~ ôîòîðåçèñò, ùî ïîë³ìåðèçóºòüñÿ positive(-type)~ ïîçèòèâíèé ôîòîðåçèñò solid ~ ñóõèé ïë³âêîâèé ôîòîðåçèñò soluble ~ ðîç÷èííèé ôîòîðåçèñò spun-on ~ øàð ôîòîðåçèñòà, íàíåñåíèé çà äîïîìîãîþ öåíòðèôóãè striation-free ~ øàð ôîòîðåçèñòà áåç íàò³êàííÿ ultrapure ~ íàä÷èñòèé ôîòîðåçèñò photoresponsive, photosensitive ôîòî÷óòëèâèé, ñâ³òëî÷óòëèâèé photosensitizer îïòè÷íèé ñåíñ³á³ë³çàòîð photosensor ôîòîïðèéìà÷ photoselting ôîòîíàá³ð phototool 1. ôîòîøàáëîí | âèãîòîâëÿòè ôîòîøàáëîíè 2. ïðîâîäèòè ôîòîë³òîãðàô³þ (äèâ. ò-æ mask) phototransistor ôîòîòðàíçèñòîð (äèâ. ò-æ transistor) physics: basic ~ ô³çè÷í³ îñíîâè electron ~ ô³çè÷íà åëåêòðîí³êà solid-state ~ ô³çèêà òâåðäîãî ò³ëà picel åëåìåíò çîáðàæåííÿ
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pla pickax åëåìåíò òèïó «ìîòèêà» (ñõåìè ïðîñóâàííÿ ÖÌÄ) picker çàõîïëåííÿ, çàõîïëþþ÷èé ïðèñòð³é pickup 1. ï³íöåò; çàõîïëåííÿ (â ðîáîò³); çàõîïëþþ÷èé ïðèñòð³é 2. âèì³ðþâàëüíèé ïåðåòâîðþâà÷, äàò÷èê cassette-to-cassette ~ íàâàíòàæóâàëüíîðîçâàíòàæóâàëüíèé ïðèñòð³é ç êàñåòè â êàñåòó (äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí) die ~ çàõîïëþâàëüíèé ïðèñòð³é äëÿ êðèñòàëà; (âàêóóìíèé) ï³íöåò äëÿ êðèñòàëà part ~ çàõîïëþâàëüíèé ïðèñòð³é äëÿ åëåêòðîííîãî êîìïîíåíòó; (âàêóóìíèé) ï³íöåò äëÿ êîìïîíåíòó vacuum ~ âàêóóìíèé ï³íöåò picominiaturization ï³êîì³í³àòþðèçàö³ÿ (ñòâîðåííÿ ì³êðîåëåêòðîííèõ ïðèñòðî¿â ç ï³êîñåêóíäíîþ øâèäêî䳺þ) picoprocessor ï³êîïðîöåññîð, ïðîöåñîð ç ï³êîñåêóíäíîþ øâèäêî䳺þ picture çîáðàæåííÿ; ìàëþíîê | çîáðàæàòè (äèâ. ò-æ image, pattern) digital ~ öèôðîâå çîáðàæåííÿ piezocrystal ï’ºçîåëåêòðè÷íèé êðèñòàë, ï’ºçîêðèñòàë piezoeffect ï’ºçîåëåêòðè÷íèé åôåêò, ï’ºçîåôåêò piezoelectricity ï’ºçîåëåêòðèêà piezoresistor ï’ºçîåëåêòðè÷íèé ðåçèñòîð piggyback ðîçì³ùåííÿ îäí³º¿ ²Ñ íà ³íø³é (äëÿ åêîíî쳿 ïëîù³ äðóêîâàíî¿ ïëàòè) pigtail ê³íåöü äðîòÿíîãî âèâîäó (ï³ñëÿ çâàðêè ³ îáð³çàííÿ) pillar ñòîâï÷èêîâèé âèâ³ä, êîíòàêòíèé ñòîâï÷èê (äèâ. ò-æ bump, pad) pillow: air ~ ïîâ³òðÿíà ïîäóøêà (â óñòàòêóâàíí³ äëÿ ì³êðîåëåêòðîí³êè) pin øòèðüêîâèé âèâ³ä (êîðïóñè) à ~s/package ê³ëüê³ñòü øòèðüêîâèõ âèâîä³â íà êîðïóñ alignment ~ íàñòàíîâíèé [îð³ºíòóþ÷èé] øòèðüîê input ~ âõ³äíèé øòèðüêîâèé âèâ³ä output ~ âèõ³äíèé øòèðüêîâèé âèâ³ä package ~ øòèðüêîâèé âèâ³ä êîðïóñó programmable gain ~s âèâîäè (êîðïóñè) äëÿ âèáîðó ïåâíîãî êîåô³ö³ºíòà ï³äñèëåííÿ receptacle ~ øòèðüêîâèé âèâ³ä ìîíòàæíî¿ ïàíåëüêè; øòèðüêîâèé âèâ³ä (êðèñòàëîíîñ³ÿ)
wire-wrappable ~ øòèðüîê äëÿ ìîíòàæó ìåòîäîì íàêðóòêè write-enable ~ øòèðüêîâèé âèâ³ä äëÿ äîçâîëó çàïèñó pinch-off â³äñ³÷êà (â ïîëüîâîìó òðàíçèñòîð³) pinhole òî÷êîâèé ïðîêîë oxide ~ òî÷êîâèé ïðîêîë â îêñèäíîìó øàð³ processing-induced ~ òî÷êîâèé ïðîêîë, ùî âèíèê ïðè òåõíîëîã³÷í³é îáðîáö³ pinout ê³ëüê³ñòü ³ ðîçòàøóâàííÿ âèâîä³â (êîðïóñè) pip: marker ~ íàñòàíîâíèé [îð³ºíòóþ÷èé] çíàê (íà êîðïóñ³ ²Ñ) pipe 1. ïðîâ³äíèé êàíàë (ì³æ îáëàñòÿìè â íàï³âïðîâ³äíèêîâèõ ïðèëàäàõ) 2. òðóáêà (âèä äåôåêòó ²Ñ) diffusion ~ äèôóç³éíà òðóáêà diode ~ ä³îäíà òðóáêà (äåôåêò ó âèãëÿä³ òîíêîãî øàðó îäíîãî òèïó åëåêòðîïðîâ³äíîñò³ ì³æ äâîìà øàðàìè ³íøîãî òèïó åëåêòðîïðîâ³äíîñò³) pipelining êîíâåéºðíà îáðîáêà äàíèõ pipette: vacuum ~ âàêóóìíèé çàõîïëåííÿ, ïîâ³òðÿíèé ï³íöåò pit 1. ÿìêà; íåêð³çíèé îäîáóòîê (íàïð. â îêñèäíîìó øàð³) 2. óòâîðþâàòè ÿìêè (ïðè òðàâëåíí³) etch ~ ÿìêà òðàâëåííÿ potential ~ ïîòåíö³àëüíà ÿìà pitch: array ~ êðîê ìàòðèö³ diffusion ~ ãëèáèíà äèôó糿; ãëèáèíà (çàëÿãàííÿ) äèôóç³éíî¿ îáëàñò³ lead pin ~ â³äñòàíü ì³æ øòèðüêîâèìè âèâîäàìè (êîðïóñè) metal ~ òîâùèíà øàðó (ñïîëó÷íî¿) ìåòàë³çàö³¿ pitting óòâîðåííÿ ÿìîê (ïðè òðàâëåíí³) contact ~ óòâîðåííÿ ÿìîê íà êîíòàêòíîìó ìàéäàí÷èêó pixel 1. åëåìåíò çîáðàæåííÿ 2. ïëÿìà åêñïîçèö³¿ ì³í³ìàëüíèõ ðîçì³ð³â placement ðîçì³ùåííÿ; óñòàíîâêà; ìîíòàæ automated ~ àâòîìàòèçîâàíå ðîçì³ùåííÿ (íàïð. åëåìåíò³â) cell ~ ðîçì³ùåííÿ êîì³ðîê (íàïð. â íàï³âïðîâ³äíèêîâîìó ÇÏ)
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pla component ~ óñòàíîâêà [ìîíòàæ] êîìïîíåíò³â depth ~ âåðòèêàëüíå ââåäåííÿ ëåãóþ÷î¿ äîì³øêè edge ~ óñòàíîâêà êóòà êðèñòàëà â çàäàíå ïîëîæåííÿ high-speed ~ âèñîêîïðîäóêòèâíèé ìîíòàæ (êîìïîíåíò³â) initial ~ ïî÷àòêîâå ðîçì³ùåííÿ (íàïð. åëåìåíò³â) interactive ~ àâòîìàòèçîâàíå ðîçì³ùåííÿ (íàïð. åëåìåíò³â) ïðè ä³àëîãîâîìó ïðîåêòóâàíí³, ³íòåðàêòèâíå ðîçì³ùåííÿ (åëåìåíò³â) lateral ~ ãîðèçîíòàëüíå ââåäåííÿ ëåãóþ÷î¿ äîì³øêè min-cut ~ ðîçì³ùåííÿ ç ì³í³ìàëüíèì ÷èñëîì ïåðåòèí³â one-dimensional ~ îäíîâèì³ðíå ðîçì³ùåííÿ (åëåìåíò³â) through-hole ~ ìîíòàæ êîìïîíåíò³â ç øòèðüêîâèìè âèâîäàìè placer 1. ïðîãðàìà ðîçì³ùåííÿ åëåìåíò³â 2. óñòàíîâêà äëÿ ìîíòàæó (êîìïîíåíò³â) automatic ~ 1. ïðîãðàìà àâòîìàòè÷íîãî ðîçì³ùåííÿ åëåìåíò³â (²Ñ) 2. ìîíòàæíèé àâòîìàò chip ~ óñòàíîâêà äëÿ ìîíòàæó êðèñòàë³â plague: purple ~ ïóðïóðíà ÷óìà (óòâîðåííÿ ³íòåðìåòàëåâîãî ç’ºäíàííÿ AuÀl2) plan: chip floor ~ áàçîâèé ïëàí êðèñòàëà floor ~ ïîð³âíåâèé ïëàí ðîçì³ùåííÿ åëåìåíò³â function-oriented partitioning ~ ïëàí ôóíêö³îíàëüíîãî ðîçáèòòÿ [äåêîìïîçèö³¿] ñèñòåìè general floor ~ çàãàëüíèé ïëàí êðèñòàëà planar 1. ïëàíàðíà òåõíîëîã³ÿ 2. ïëàíàðíèé (íàïð. ïðî ïðèëàä); ïëîùèííî¿; ïëîñêèé (ïðî ïîâåðõíþ) planarity ïëîùèííà planarization ïëàíàðèçàö³ÿ, çàáåçïå÷åííÿ ïëîùèííî¿, âèð³âíþâàííÿ ïîâåðõí³ plane ïëîùèíà; ïëîñêà ïîâåðõíÿ AND ~ ìàòðèöÿ ² (â ïðîãðàìîâàí³é ëîã³÷í³é ìàòðèö³) cleavage ~ ïëîùèíà ñïàéíîñò³
crystal [crystallographic] ~ êðèñòàëîãðàô³÷íà ïëîùèíà CuO ~ ïëîùèíà ÑuÎ (â íàäïðîâ³äí³é êåðàì³ö³) glide ~ ïëîùèíà êîâçàííÿ junction ~ ïëîùèíà (ð–n-)ïåðåõîäó mask ~ ïëîùèíà ìàñêè; ïëîùèíà øàáëîíà OR ~ ìàòðèöÿ ÀÁÎ (â ïðîãðàìîâàí³é ëîã³÷í³é ìàòðèö³) photographic ~ ôîòîãðàô³÷íà ïëàñòèíêà slip ~ ïëîùèíà êîâçàííÿ twin(ning)~ äâ³éíèêîâà ïëîùèíà wiring ~ ïëîùèíà òðàñóâàííÿ planetary ïëàíåòàðíèé ïðèñòð³é (ó âàêóóìí³é íàïèëþâàëüíî¿ óñòàíîâö³) planning: chip ~ ðîçì³ùåííÿ åëåìåíò³â íà êðèñòàë³ (ïðè ïðîåêòóâàíí³); ðîçðîáêà ïîð³âíåâîãî ïëàíó êðèñòàëà floor ~ ïîð³âíåâå ðîçì³ùåííÿ åëåìåíò³â Planox òåõíîëîã³ÿ «Ïëàíîêñ» (äëÿ âèãîòîâëåííÿ ÌÎÍ Â²Ñ) plant óñòàíîâêà; óñòàòêóâàííÿ pilot ~ äîñë³äíà óñòàíîâêà production ~ ïðîìèñëîâà óñòàíîâêà plasma ïëàçìà arc ~ ïëàçìà äóãîâîãî ðîçðÿäó chlorinated gas ~ õëîðîâì³ñíà ãàçîâà ïëàçìà ECR [electron ñóclotron resonance] ~ ïëàçìà ç ìàãí³òíèì ïîëåì â óìîâàõ åëåêòðîííîãî öèêëîòðîííîãî ðåçîíàíñó freon ~ ôðåîíîâà ïëàçìà gas-discharge [gaseous] ~ ãàçîðîçðÿäíà ïëàçìà glow-discharge ~ ïëàçìà òë³þ÷îãî ðîçðÿäó hydrogen ~ âîäíåâà ïëàçìà laser-based ~ ëàçåðíà ïëàçìà low-energy ~ íèçüêîòåìïåðàòóðíà ïëàçìà low-pressure ~ ïëàçìà íèçüêîãî òèñêó microwave multipolar ~ ïëàçìà â áàãàòîïîëþñí³é êàìåð³ (êàòîä îòî÷åíèé ìàãí³òàìè) nonequilibrium ~ íåð³âíîâàæíà ïëàçìà oxide ~ ïëàçìà, ÿêà ñòâîðþº îêñèä oxygen ~ êèñíåâà ïëàçìà reactive gas ~ ðåàêòèâíà ãàçîðîçðÿäíà ïëàçìà RF induced ~ ³íäóêîâàíà ïëàçìà Â×-ðîçðÿäó plasmatron ïëàçìàòðîí plastic 1. ïëàñòìàñà, ïëàñòèê | ïëàñòìàñîâèé
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poi 2. ïëàñòè÷íèé acrylic ~ ïëàñòìàñà íà îñíîâ³ ïîë³àêðèëàò³â dual in-line ~ ïëàñòìàñîâèé DIP-êîðïóñ epoxy ~ ïëàñòìàñà íà îñíîâ³ åïîêñèäíî¿ ñìîëè polyamide ~ ïîë³àì³äíà ïëàñòìàñà polyimide ~ ïîë³³ì³äíà ïëàñòìàñà silicone ~ êðåìí³éîðãàí³÷íà ïëàñòìàñà styrene ~ ïëàñòìàñà ïîë³ñòèðîëó thermosetting ~ òåðìîðåàêòèâíà ïëàñòìàñà plasticizer ïëàñòèô³êàòîð plate 1. ïëàòà; ïëàñòèíà 2. ôîòîøàáëîí (äèâ. ò-æ mask, photomask) 3. îáêëàäàííÿ (êîíäåíñàòîðà) 4. íàíîñèòè ïîêðèòòÿ åëåêòðîë³òè÷íèì ìåòîäîì base ~ íåñó÷à ïëàòà; ï³äêëàäêà (äèâ. ò-æ substrate) blank ~ 1. çàãîò³âêà äðóêîâàíî¿ ïëàòè 2. íåîáðîáëåíà ï³äêëàäêà; íåçìîíòîâàíà ï³äêëàäêà evaporated ~ ïëàñòèíà ç íàïèëåíîþ ïë³âêîþ hard-surface ~ 1. ïëàñòèíà ç çíîñîñò³éêèì ïîâåðõíåâèì øàðîì 2. çíîñîñò³éêèé ôîòîøàáëîí; ìåòàë³çîâàíèé ôîòîøàáëîí lapping ~ ïðèòèðàëüíà ïëèòà laser-scriber ~ ï³äêëàäêà, îäåðæàíà ëàçåðíèì ñêðàéáóâàííÿì mask(ing)~ 1. ïëàñòèíà äëÿ âèãîòîâëåííÿ ôîòîøàáëîíó 2. ôîòîøàáëîí merged ~ ñóì³ùåíà (íàïð. ç îáëàñòþ ïîëüîâîãî òðàíçèñòîðà) îáêëàäêà êîíäåíñàòîðà semiconductor ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà sputtered ~ ï³äêëàäêà ç ïë³âêîþ, íàíåñåíîþ ðîçïèëþâàííÿì plating 1. åëåêòðîë³òè÷íå îñàäæåííÿ, åëåêòðîîñàäæåííÿ (äèâ. ò-æ deposition) 2. íàíåñåííÿ ïîêðèòòÿ; ìåòàë³çàö³ÿ 3. ïîêðèòòÿ; øàð electroless ~ îñàäæåííÿ ìåòîäîì õ³ì³÷íîãî â³äíîâëåííÿ high-vacuum ion ~ âèñîêîâàêóóìíå ³îííå îñàäæåííÿ laser-enhanced [laser-induced] ~ ëàçåðíîñòèìóëüîâàíå îñàäæåííÿ pattern ~ ñåëåêòèâíå åëåêòðîë³òè÷íå îñàäæåííÿ tin ~ ëóä³ííÿ
platinum ïëàòèíà, Pt electronic-grade ~ ïëàòèíà åëåêòðîííî¿ ÷èñòîòè (äëÿ çàñòîñóâàííÿ â åëåêòðîíí³é ïðîìèñëîâîñò³) PLD (programmable logic device) ïðîãðàìîâàíèé ëîã³÷íèé ïðèëàä (íàïð. ÏËÌ) EEPROM-based ~ ïðîãðàìîâàíà ëîã³÷íà ²Ñ íà îñíîâ³ ÅÑÏÏÇÏ fuse(-based)~ ïðîãðàìîâàíà ëîã³÷íà ²Ñ ç ïåðåïàëþâàíèìè ïåðåìè÷êàìè plot ãðàô³ê; ä³àãðàìà; êðèâà | áóäóâàòè ãðàô³ê ïî êîîðäèíàòàõ layout ~ òîïîëîã³÷íå êðåñëåííÿ plotter ãðàô³÷íèé ïðèñòð³é; êîîðäèíàòîãðàô coordinate ~ êîîðäèíàòîãðàô graphic ~ ãðàô³÷íèé ïðèñòð³é high-speed ~ âèñîêîøâèäê³ñíèé ãðàô³÷íèé ïðèñòð³é laser ~ ëàçåðíèé ãðàô³÷íèé ïðèñòð³é scribing ~ êîîðäèíàòîãðàô ç ð³çöåì õ-ó ~ êîîðäèíàòîãðàô plowing: snow ~ ïðîô. á³ëèé íàë³ò (ïîá³÷íèé åôåêò ïåðåðîçïîä³ëó àòîì³â ôîñôîðó â êðåìí³¿ ïðè ôîðìóâàíí³ îêñèäíîãî øàðó) plug 1. âèëêà (åëåêòðè÷íîãî ç’ºäíóâà÷à); øòåïñåëü; øòåêåð 2. êîíòàêòíèé øòèðüîê 3. âñòàâëÿòè øòèðüêè (êîðïóñè) plugged 1. âñòàâëåíèé (îá øòèðüêàõ êîðïóñè) 2. çí³ìíèé, çì³ííèé plug-in 1. ç øòèðüêîâèìè âèâîäàìè (íàïð. ïðî DIP-êîðïóñ) 2. çí³ìíèé, çì³ííèé packet: epitaxial ~ åï³òàêñ³àëüíèé êèøåíÿ, êèøåíÿ â åï³òàêñ³àëüíîìó øàð³ isolation ~ èçîëþþ÷à [ðîçä³ëþþ÷à] êèøåíÿ semiconductor ~ íàï³âïðîâ³äíèêîâà êèøåíÿ substrate ~ êèøåíÿ â êðåìí³ºâ³é ï³äêëàäö³ pod êîíòåéíåð (íàïð. äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí) SMIF ~ êîíòåéíåð äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí ³ç ñòàíäàðòíèì ìåõàí³÷íèì ³íòåðôåéñîì (äëÿ òðàíñïîðòóâàííÿ ïëàñòèí â êàñåòàõ) point: branch ~ òî÷êà ðîçãàëóæåííÿ, âóçîë (êîëà) connection ~ êîíòàêòíà òî÷êà; êîíòàêòíèé ìàéäàí÷èê; ñïîëó÷íà òî÷êà
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por control ~ òî÷êà óïðàâë³ííÿ, âõ³äíèé êîíòàêò ñõåìè current àñcumulation ~ òî÷êà àêóìóëÿö³¿ ñòðóìó dew ~ òî÷êà ðîñè flash ~ òî÷êà [òåìïåðàòóðà] ñïàëàõó projecting ~ ãîñòðèé âèñòóï reference ~ 1. òî÷êà â³äë³êó; êîíòðîëüíà êðàïêà 2. çíàê ñóì³ùåííÿ (íàïð. íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³) saturation ~ òî÷êà [òåìïåðàòóðà] íàñè÷åííÿ single defect ~ òî÷êîâèé äåôåêò test ~s êîíòðîëüí³ òî÷êè transformation ~ òî÷êà [òåìïåðàòóðà] ôàçîâîãî ïåðåõîäó transition ~ òî÷êà ïåðåõîäó (íàïð. òåìïåðàòóðà ïåðåõîäó â íàäïðîâ³äíå ñòàí) wiring ~ êîíòàêòíèé ìàéäàí÷èê pointer: laser ~ ëàçåðíèé ïîêàæ÷èê (íàïð. â ñâ³òëîìîíòàæíîìó ñòîë³) polarity: channel ~ òèï åëåêòðîïðîâ³äíîñò³ êàíàëó (ïîëüîâîãî òðàíçèñòîðà) opposite ~ ïðîòèëåæíèé òèï åëåêòðîïðîâ³äíîñò³ polisher ïîë³ðóâàëüíèé âåðñòàò polishing ïîë³ðîâêà abrasive ~ ìåõàí³÷íà [àáðàçèâíà] ïîë³ðîâêà chemical etch ~ õ³ì³÷íà ïîë³ðîâêà òðàâëåííÿì chemical-mechanical ~ õ³ì³êî-ìåõàí³÷íà ïîë³ðîâêà electrolytic ~ åëåêòðîë³òè÷íà ïîë³ðîâêà, åëåêòðîïîë³ðîâêà etch ~ õ³ì³÷íà ïîë³ðîâêà òèì, ùî òðàâëåííÿ hydroplane ~ ã³äðîïëîùèííà ïîë³ðîâêà mirror ~ äçåðêàëüíà ïîë³ðîâêà slurry ~ ïîë³ðîâêà çà äîïîìîãîþ àáðàçèâíî¿ ñóñïåí糿 pollutant çàáðóäíþþ÷å ðå÷îâèíó pollution çàáðóäíåííÿ poly 1. ïîë³êðèñòàë³÷íèé êðåìí³é, ïîë³êðåìí³é 2. ïîë³êðèñòàë double ~ äâîøàðîâà ïë³âêà ïîë³êðèñòàë³÷íîãî êðåìí³þ open-tube ~ ïîë³êðèñòàë³÷íèé êðåìí³é, âèðîùåíèé ìåòîäîì â³äêðèòî¿ òðóáè scaled ~ ô³ðì. òåõíîëîã³ÿ ìàñøòàáóâàííÿ ²Ñ ç ïîë³êðåìí³ºâèì çàòâîðîì
polyboat ÷îâíèê ç ïîë³êðèñòàë³÷íîãî êðåìí³þ polychip-DIP DIP-êîðïóñ äëÿ áàãàòîêðèñòàëüíèõ Ã²Ñ polycide ïîë³öèä (äâîøàðîâà ñòðóêòóðà ç ïîë³êðåìí³þ ³ ñèë³öèäó) polycrystal 1. ïîë³êðèñòàë 2. ïîë³êðèñòàë³÷íèé êðåìí³é, ïîë³êðåìí³é silicon ~ ïîë³êðèñòàë³÷íèé êðåìí³é, ïîë³êðåìí³é polycrystalline ïîë³êðèñòàë³÷íèé polymerization ïîë³ìåðèçàö³ÿ plasma ~ ïîë³ìåðèçàö³ÿ â ïëàçì³, ïëàçìîñòèìóëüîâàíà ïîë³ìåðèçàö³ÿ p o l y m e t h y l m e t h a c r y l a t e ïîë³ìåòèëìåòàêðèëàò (ïîçèòèâíèé åëåêòðîííèé ð³çíå) PolyPlanar òåõíîëîã³ÿ «Ïîëèïëà-íàð» (äëÿ âèãîòîâëåííÿ n-ÌÎÍ Â²Ñ ç åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â), ïîë³ïëàíàðíà òåõíîëîã³ÿ polyresistor ïîë³êðåìí³ºâèé ðåçèñòîð polysilicon ïîë³êðèñòàë³÷íèé êðåìí³é, ïîë³êðåìí³é (äèâ. ò-æ silicon) laser crystallized ~ ïîë³êðèñòàë³÷íèé êðåìí³é, ðåêðèñòàë³çîâàíèé ëàçåðíèì ïðîìåíåì (äî ìîíîêðèñòàë³÷íîãî êðåìí³þ) p+ doped ~ ïîë³êðèñòàë³÷íèé êðåìí³é ð+òèïó self-aligned ~s ñàìîñóì³ùåí³ ïîë³êðèñòàë³÷í³ çàòâîðè silicided ~ ïîë³êðèñòàë³÷íèé êðåìí³é ç øàðîì ñèë³öèäó polysiloxane ïîë³ñèëîêñàí, (R2SiO)n polystyrene: chloromethylated ~ õëîðìåòèëîâàíèé ïîë³ñòèðîë (åëåêòðîííèé ðåçèñò) pool: silicon ~ êðåìí³ºâèé ðîçïëàâ, ðîçïëàâ êðåìí³þ population çàñåëåíà (åíåðãåòè÷íîãî ð³âíÿ) dense ~ 1. ù³ëüíà çàñåëåí³ñòü 2. ù³ëüíèé ìîíòàæ electron ~ åëåêòðîííà çàñåëåí³ñòü level ~ çàñåëåíà åíåðãåòè÷íîãî ð³âíÿ threshold ~ ãðàíè÷íà çàñåëåí³ñòü porcelain-clad ç ôàðôîðîâèì ïîêðèòòÿì porcelainize íàíîñèòè ôàðôîðîâå ïîêðèòòÿ; çâàðþâàòè ìåòàë ç ñêëîì (äëÿ òÑ) port 1. âõ³ä; âèõ³ä; êîíòàêò 2. îäîáóòîê 3. â÷ò ïîðò
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pre emitter diffusion ~ êîíòàêò â åì³òåðí³é äèôóç³éí³é îáëàñò³ multifunction ~ áàãàòîôóíêö³îíàëüíèé ïîðò portion: diffused ~ äèôóç³éíà îáëàñòü doped ~ ëåãîâàíà îáëàñòü edge ~ êðàéîâà ä³ëÿíêà exposed ~ 1. åêñïîíîâàíà ä³ëÿíêà 2. ðîçêðèòà [â³äêðèòà] ä³ëÿíêà masked ~ ìàñêîâàíà ä³ëÿíêà monocrystalline ~ ìîíîêðèñòàë³÷íà îáëàñòü oxide ~ îêñèäíà ä³ëÿíêà peripheral ~ êðàéîâà ä³ëÿíêà revealed ~ ðîçêðèòà [â³äêðèòà] ä³ëÿíêà signal connect ~ êîíòàêòíèé ìàéäàí÷èê superficial ~ ïîâåðõíåâà ä³ëÿíêà terminal ~ êîíòàêòíèé ìàéäàí÷èê unmasked ~ íåìàñêîâàíà ä³ëÿíêà position ïîëîæåííÿ; (ðîáî÷à) ïîçèö³ÿ | ïîçèö³îíóâàòè, âñòàíîâëþâàòè â çàäàíå ïîëîæåííÿ load ~ ïîçèö³ÿ çàâàíòàæåííÿ operation ~ ðîáî÷à ïîçèö³ÿ positioner: beam ~ ïðèñòð³é óïðàâë³ííÿ (åëåêòðîííèì) ïðîìåíåì chip ~ ïðèñòð³é äëÿ ïîçèö³îíóâàííÿ êðèñòàë³â ²Ñ coarse ~ ïðèñòð³é ãðóáîãî ïîçèö³îíóâàííÿ fine ~ ïðèñòð³é ïðåöèç³éíîãî ïîçèö³îíóâàííÿ parts ~ ïðèñòð³é äëÿ ïîçèö³îíóâàííÿ êîìïîíåíò³â positioning ïîçèö³îíóâàííÿ, óñòàíîâêà â çàäàíå ïîëîæåííÿ accurate [fine] ~ ïðåöèç³éíå ïîçèö³îíóâàííÿ positive ïîçèòèâíå çîáðàæåííÿ, ïîçèòèâ post ñòîâï÷èêîâèé âèâ³ä, êîíòàêòíèé ñòîâï÷èê (äèâ. ò-æ bump, pad) postcuring çàäóáëåííÿ (ôîòîðåçèñòà) ï³ñëÿ åêñïîíóâàííÿ post-diffusion ðîçã³í äîì³øêè (äðóãà ñòàä³ÿ äâîõñòàä³éíî¿ äèôó糿) pot: “bean” ~ ïåêòè äëÿ òåðì³÷íî¿ îáðîáêè íàï³âïðîâ³äíèê³â potential:
backward-bias ~ íàïðóãà çâîðîòíîãî (îáåðíåíîãî) çì³ùåííÿ, çâîðîòíº (îáåðíåíå) çì³ùåííÿ contact ~ êîíòàêòíà ð³çíèöÿ ïîòåíö³àë³â floating ~ ïëàâàþ÷èé ïîòåíö³àë forward-bias ~ íàïðóãà ïðÿìîãî çì³ùåííÿ, ïðÿìå çì³ùåííÿ ground ~ ïîòåíö³àë çåìë³ parabolic ~ ïàðàáîë³÷íèé ïîòåíö³àë reference ~ îïîðíà íàïðóãà potentiometer 1. ðåçèñòîð çì³ííîãî îïîðó, çì³ííèé ðåçèñòîð 2. ïîòåíö³îìåòð potting çàëèâêà (íàïð. ïëàñòìàñîþ); ãåðìåòèçàö³ÿ (íàïð. ïëàñòìàñîþ) epoxy ~ çàëèâêà åïîêñèäíîþ ñìîëîþ; ãåðìåòèçàö³ÿ åïîêñèäíîþ ñìîëîþ vacuum ~ âàêóóìíà ãåðìåòèçàö³ÿ, ãåðìåòèçàö³ÿ ó âàêóóì³ powder: carbonaceous ~ âóãëåöåâèé ïîðîøîê power 1. ïîòóæí³ñòü 2. çäàòí³ñòü; ìîæëèâ³ñòü computing ~ îá÷èñëþâàëüí³ ìîæëèâîñò³ covering ~ ïîêðèâàþ÷à çäàòí³ñòü DIP ~ ïîòóæí³ñòü ðîçñ³þâàííÿ DIP-êîðïóñó dissipation ~ ïîòóæí³ñòü ðîçñ³þâàííÿ functional ~ ôóíêö³îíàëüíà çäàòí³ñòü; ôóíêö³îíàëüíà ìîæëèâ³ñòü memory ~ åôåêòèâí³ñòü ÇÏ rated ~ íîì³íàëüíà ïîòóæí³ñòü resolving ~ ðîçä³ëüíà çäàòí³ñòü, äîçâ³ë stand-by ~ ðåçåðâíà ïîòóæí³ñòü practice: resist stripping ~ ìåòîä âèäàëåííÿ ðåçèñòà praetersonics àêóñòîåëåêòðîí³êà preaging ïîïåðåäíº ñòàð³ííÿ thermal ~ ïîïåðåäíº òåðì³÷íå ñòàð³ííÿ prebake ïîïåðåäí³é íàãð³â; òåðìîîáðîáêà (ó ôîòîë³òîãðàô³¿) | çàçäàëåã³äü íàãð³âàòè; ï³ääàâàòè òåðìîîáðîáö³ (ó ôîòîë³òîãðàô³¿) precipitate îñàä | îñàäæóâàòè(ñÿ), âèïàäàòè â îñàä precipitation îñàäæåííÿ, âèïàäàííÿ â îñàä oxygen ~ âèä³ëåííÿ êèñíþ (íàïð. ïðè â³äïàë³ íàï³âïðîâ³äíèêîâèõ ïëàñòèí) precision: positioning ~ òî÷í³ñòü ïîçèö³îíóâàííÿ registration ~ òî÷í³ñòü ñóì³ùåííÿ precoat ïîïåðåäíº ïîêðèòòÿ | íàíîñèòè ïîïåðåäíº ïîêðèòòÿ preconditioning ïîïåðåäíÿ îáðîáêà;
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pri ï³äãîòîâêà precursor âèñõ³äíèé ìàòåð³àë; ïî÷àòêîâà (âèõ³äíà) ðå÷îâèíà; ïî÷àòêîâèé (âèõ³äíèé) ðåàãåíò gas-phase ~ ãàçîôàçíèé ïî÷àòêîâèé (âèõ³äíèé) ðåàãåíò saturated polymeric ~ íàñè÷åíèé ïîë³ìåðíèé âèõ³äíèé ìàòåð³àë Si-yielding ~ ðå÷îâèíà, ùî ñëóæèòü äëÿ ôîðìóâàííÿ øàðó êðåìí³þ surface-adsorber ~ ïî÷àòêîâèé (âèõ³äíèé) ðåàãåíò, àäñîðáîâàíèé íà ïîâåðõí³ predeposit 1. çàãîíêà äîì³øêè (ïåðøà ñòàä³ÿ äâîõñòàä³éíî¿ äèôó糿) | çàãàíÿòè äîì³øêó 2. çàçäàëåã³äü îñàäæóâàòè predeposition 1. çàãîíêà ïðèì³ñè (ïåðøà ñòàä³ÿ äâîõñòàä³éíî¿ äèôó糿) 2. ïîïåðåäíº îñàäæåííÿ dopant ~ 1. çàãîíêà ïðèì³ñè 2. ïîïåðåäíº îñàäæåííÿ äîì³øêè single-source ~ ïîïåðåäíº îñàäæåííÿ îäíîãî äæåðåëà prediction ïðîãíîçóâàííÿ yield ~ ïðîãíîçóâàííÿ â³äñîòêà âèõîäó ãîäíèõ predoping ïîïåðåäíº ëåãóâàííÿ, ëåãóâàííÿ ïî÷àòêîâîþ (âèõ³äíîþ) äîì³øêîþ preform 1. çàãîò³âêà; ðàìêà (ç ïðèïîþ) 2. ôîðìóâàòè âèâîäè ( êîìïîíåíò³â) brazing ~ ðàìêà ç òóãîïëàâêîãî ïðèïîþ die-attach ~ ðàìêà äëÿ ïðèêð³ïëåííÿ êðèñòàëà (²Ñ) eutectic ~ ðàìêà ç åâòåêòè÷íîãî ñïëàâó glass ~ ðàìêà ç (ïðèïîþ) ñêëà lid seal ~ ðàìêà ç ïðèïîþ äëÿ ïðèïàþâàííÿ êðèøêè êîðïóñó sealing ~ ðàìêà äëÿ ïðèïàþâàííÿ êðèñòàëà ²Ñ preforming ôîðìóâàííÿ âèâîä³â (êîìïîíåíò³â) preimplantation ïåðøà ñòàä³ÿ ³îííî¿ ³ìïëàíòàö³¿ prelid(ding) îáðîáêà ïåðåä ïðèïàþâàííÿì êðèøêè êîðïóñó preparation: backside ~ ï³äãîòîâêà íèæíüî¿ ïîâåðõí³ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè (íàïð. øë³ôîâêà) computer-aided ~ âèãîòîâëåííÿ ç âèêîðèñòàííÿì ÅÎÌ
die ~ ï³äãîòîâêà êðèñòàëà (²Ñ) äî çá³ðêè mask ~ 1. âèãîòîâëåííÿ øàáëîí³â 2. ôîðìóâàííÿ ìàñêè single-step ~ âèãîòîâëåííÿ â îäèí åòàï substrate ~ ï³äãîòîâêà (ïîâåðõí³) ï³äêëàäêè prepreg ïðîì³æíèé ³çîëÿö³éíèé øàð ì³æ ïðîâ³äíèìè øàðàìè (íàïð. â áàãàòîøàðîâ³é äðóêîâàí³é ïëàò³) preprocessing ïîïåðåäíÿ îáðîáêà preprocessor ïîïåðåäí³é ïðîöåñîð, ïåðåäïðîöåñîð press ïðåñ | ïðåñóâàòè injection molding ~ ïðåñ äëÿ ëèòâà ï³ä òèñêîì mold (ing) ~ ëèòòüîâèé ïðåñ transfer molding ~ ïðåñ äëÿ òðàíñôåðíîãî ëèòòÿ press-pack ïëàñòìàñîâèé ïëîñêèé êîðïóñ pressure: background ~ çàëèøêîâèé òèñê beam equivalent ~ åêâ³âàëåíòíèé òèñê â ïó÷êó cutting ~ òèñê ð³æó÷îãî ³íñòðóìåíòó partial ~ ïàðö³àëüíèé òèñê residual ~ çàëèøêîâèé òèñê prime ãîòóâàòè ïîâåðõíþ äëÿ ïîäàëüøî¿ îáðîáêè primer 1. (êîðîòêèé) ïîñ³áíèê 2. ïî÷àòêîâå ïîêðèòòÿ (íàïð. äëÿ ï³äâèùåííÿ àäãå糿 ïîäàëüøîãî øàðó) assembly ~ (êîðîòêèé) ïîñ³áíèê ïî çá³ðö³ (íàïð. ²Ñ) primitive ïðèì³òèâ (åëåìåíòàðíèé áëîê äëÿ ïîáóäîâè ²Ñ) analog ~ ïðèì³òèâ àíàëîãîâî¿ ñõåìè functional level ~ ïðèì³òèâ ôóíêö³îíàëüíîãî ð³âíÿ hold ~s ï³äòðèìóþ÷³ ïðèì³òèâè logical [logic level] ~ ëîã³÷íèé ïðèì³òèâ, ïðèì³òèâ ëîã³÷íîãî ð³âíÿ (íàïð. ÍÅ–², ÍÅ– ÀÁÎ) setup ~s óñòàíîâî÷í³ ïðèì³òèâè technology-independent ~ ïðèì³òèâ, ³íâàð³àíòíèé äî òåõíîëî㳿 principle: CCD ~ ìåõàí³çì ðîáîòè ÏÇÇ “divide and conquer” ~ ïðèíöèï «ðîçä³ëÿé ³ âîëîäàðþé» (ïðè ïðîåêòóâàíí³ Â²Ñ çâåðõó âíèç)
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pro operating ~ ïðèíöèï ðîáîòè; ìåõàí³çì shadow ~ ôîòîë³òîãðàô³ÿ ïî âñüîìó ïîëþ ðîáîòè (íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) print 1. òðàôàðåòíèé äðóê, ñ³òêîãðàô³ÿ | step ~ ë³òîãðàô³ÿ ç ïîñë³äîâíèì êðîêîâèì ïðîâîäèòè òðàôàðåòíèé äðóê 2. ïðîâîäèòè åêñïîíóâàííÿì ôîòîë³òîãðàô³þ; ïðîâîäèòè ë³òîãðàô³þ thick-film ~ òðàôàðåòíèé äðóê äëÿ òîâñòèõ (äèâ. ò-æ photolithography) ïë³âîê contact ~ êîíòàêòíà ôîòîë³òîãðàô³ÿ probe 1. çîíä | çîíäóâàòè (äèâ. ò-æ hard-contact ~ ôîòîë³òîãðàô³ÿ ç ù³ëüíèì microprobe) 2. çîíäîâà âèì³ðþâàëüíà êîíòàêòîì óñòàíîâêà projection ~ ïðîåêö³éíà ôîòîë³òîãðàô³ÿ; capacitance ~ çîíä ºìíîñò³ ïðîåêö³éíà ë³òîãðàô³ÿ electron-beam ~ åëåêòðîííî-ïðîìåíåâèé screen ~ òðàôàðåòíèé äðóê, ñ³òêîãðàô³ÿ çîíä soft-contact ~ ôîòîë³òîãðàô³ÿ ç ì’ÿêèì fault inject ~ çîíä äëÿ âíåñåííÿ êîíòàêòîì íåñïðàâíîñòåé â ²Ñ printability ìîæëèâ³ñòü ôîðìóâàííÿ ìàëþíêà four-point ~ ÷åòèðüîõçîíäîâà âèì³ðþâàëüíà ñïîñîáîì òðàôàðåòíîãî äðóêó óñòàíîâêà printboard äðóêîâàíà ïëàòà logic ~ áàãàòîçîíäîâà óñòàíîâêà äëÿ flexible ~ ãíó÷êà äðóêîâàíà ïëàòà ïåðåâ³ðêè ëîã³÷íèõ ²Ñ printer 1. óñòàíîâêà òðàôàðåòíîãî äðóêó (äèâ. mercury ~ çîíäîâà âèì³ðþâàëüíà óñòàíîâêà ò-æ aligner) 2. óñòàíîâêà ë³òîãðàô³¿ ç ðòóòíèìè êîíòàêòàìè deep-UV contact ~ óñòàíîâêà êîíòàêòíî¿ microcircuit ~ çîíäîâà óñòàíîâêà äëÿ ôîòîë³òîãðàô³¿ ç äæåðåëîì äàëüíüîãî ïåðåâ³ðêè êðèñòàë³â ³íòåãðàëüíèõ óëüòðàô³îëåòîâîãî âèïðîì³íþâàííÿ ì³êðîñõåì optical ~ óñòàíîâêà ôîòîë³òîãðàô³¿ multipoint ~ áàãàòîçîíäîâà âèì³ðþâàëüíà screen ~ óñòàíîâêà òðàôàðåòíîãî äðóêó óñòàíîâêà SMD screen ~ óñòàíîâêà òðàôàðåòíîãî noninvasive ~ íåðóéíóþ÷èé äðóêó äëÿ íàíåñåííÿ ïàñòè ïðèïîþ íà ïëàò³ [áåçêîíòàêòíèé] çîíä (íàïð. îïòè÷íèé) äëÿ ïîâåðõíåâîãî ìîíòàæó test ~ çîíäîâà âèì³ðþâàëüíà óñòàíîâêà thick-film ~ óñòàíîâêà òðàôàðåòíîãî äðóêó tungsten-tipped ~ çîíä ç âîëüôðàìîâèì äëÿ òîâñòèõ ïë³âîê â³ñòðÿì vacuum contact ~ óñòàíîâêà êîíòàêòíî¿ ultrasonic ~ óëüòðàçâóêîâèé çîíä vacuum ~ ôîòîë³òîãðàô³¿ ç âàêóóìíîþ êàìåðîþ (äëÿ âàêóóìíèé ï³íöåò ôîòîøàáëîíó ³ íàï³âïðîâ³äíèêîâî¿ probeability ïðèäàòí³ñòü (ñòðóêòóðè ïëàñòèíè) êðèñòàëà) äëÿ çîíäîâèõ âèïðîáóâàíü 1 õ projection ~ óñòàíîâêà ïðîåêö³éíî¿ prober çîíäîâà âèì³ðþâàëüíà óñòàíîâêà ë³òîãðàô³¿ áåç ìàñøòàáóâàííÿ automatic ~ àâòîìàòè÷íà çîíäîâà printing 1. òðàôàðåòíèé äðóê, ñ³òêîãðàô³ÿ 2. âèì³ðþâàëüíà óñòàíîâêà ë³òîãðàô³ÿ; ôîòîë³òîãðàô³ÿ (äèâ. ò-æ chip ~ çîíäîâà óñòàíîâêà äëÿ ïåðåâ³ðêè lithography, photolithography) êðèñòàë³â (íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³) die-by-die ~ ïîìîäóëüíèé ïåðåíåñåííÿ electron-beam ~ çîíäîâà âèì³ðþâàëüíà [ìóëüòèïë³êàö³ÿ] çîáðàæåíü â ïðîåêö³éí³é óñòàíîâêà ç åëåêòðîííî-ïðîìåíåâèìè ë³òîãðàô³¿ çîíäàìè direct ~ ë³òîãðàô³ÿ ç áåçïîñåðåäí³ì manual ~ çîíäîâà âèì³ðþâàëüíà óñòàíîâêà åêñïîíóâàííÿì (áåç âæèâàííÿ øàáëîí³â) ç ðó÷íèì óïðàâë³ííÿì metal screen ~ òðàôàðåòíèé äðóê, microprocessor-based ~ çîíäîâà ñ³òêîãðàô³ÿ âèì³ðþâàëüíà óñòàíîâêà ç reduced mask ~ êîíòàêòíèé äðóê ì³êðîïðîöåñîðíèì óïðàâë³ííÿì ôîòîøàáëîí³â ³ç ñòðóêòóðàìè çìåíøåíèõ wafer ~ çîíäîâà óñòàíîâêà äëÿ ïåðåâ³ðêè ðîçì³ð³â íàï³âïðîâ³äíèêîâèõ ïëàñòèí (ç ³íòåãðàëüíèìè ñòðóêòóðàìè)
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pro probing çîíäóâàííÿ contactless ~ áåçêîíòàêòíå çîíäóâàííÿ (íàïð. ëàçåðíå), áåçêîíòàêòí³ çîíäîâ³ âèïðîáóâàííÿ laser ~ ëàçåðíå çîíäóâàííÿ molecular-beam ~ çîíäóâàííÿ ìîëåêóëÿðíèì ïó÷êîì Raman ~ äîñë³äæåííÿ ìåòîäîì ðàìàí³âñüêî¿ ñïåêòðîñêîﳿ procedure 1. òåõíîëîã³÷íèé ïðîöåñ; îïåðàö³ÿ 2. ìåòîäèêà Hi-Rel ~ ìåòîä çàáåçïå÷åííÿ íàä³éíîñò³ ïðèëàä³â post-RIBE wet ~ ð³äèííà îáðîáêà ï³ñëÿ ðåàêòèâíîãî ³îííîãî òðàâëåííÿ processing ~ 1. òåõíîëîã³÷íà îáðîáêà; òåõíîëîã³÷íà îïåðàö³ÿ 2. ñïîñ³á îáðîáêè qualification ~ ìåòîäèêà êâàë³ô³êàö³éíèõ âèïðîáóâàíü test ~ ìåòîäèêà âèïðîáóâàíü process 1. ïðîöåñ; (òåõíîëîã³÷íèé) ìåòîä, ñïîñ³á 2. òåõíîëîã³ÿ (äèâ. ò-æ technique, technology) 3. (òåõíîëîã³÷íà) îáðîáêà; òåõíîëîã³÷íà îïåðàö³ÿ | îáðîáëÿòè; ïðîâîäèòè òåõíîëîã³÷íó îïåðàö³þ air-isolation ~ òåõíîëîã³ÿ ²Ñ ç ïîâ³òðÿíîþ ³çîëÿö³ºþ all-ion-implant ~ ³îííà ³ìïëàíòàö³ÿ, ³îííå ëåãóâàííÿ all-planar ~ ïëàíàðíà òåõíîëîã³ÿ Auger ~ ïðîöåñ Îæå, îæå-ïðîöåñ batch ~ ãðóïîâèé ïðîöåñ BH [bias and hardness] ~ òåðìîîáðîáêà ï³ä íàâàíòàæåííÿì bonding ~ 1. òåðìîêîìïðåñ³ÿ 2. ïðèºäíàííÿ (íàïð. âèâîä³â) BOX ~ ïðîöåñ BOX (ô³ðìîâà íàçâà òåõíîëî㳿 ³çîëÿö³¿ åëåìåíò³â ÇÏ çàãëèáëåíèì îêñèäîì êðåìí³þ) bulk CMOS ~ òåõíîëîã³ÿ KMOÏ ²Ñ íà íàï³âïðîâ³äíèêîâ³é ï³äêëàäö³ (áåç åï³òàêñ³àëüíîãî øàðó) bumping ~ òåõíîëîã³ÿ ôîðìóâàííÿ ñòîâï÷èêîâèõ âèâîä³â chip-on-board ~ ìîíòàæ êðèñòàë³â ²Ñ áåçïîñåðåäíüî íà äðóêîâàí³é ïëàò³ closed CMOS ~ òåõíîëîã³ÿ ÊÌÎÍ ²Ñ ç ï³äâèùåíîþ ãóñòèíîþ óïàêîâêè
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CMOS-on-sapphire ~ òåõíîëîã³ÿ ÊÌÎÍ ²Ñ ³ç ñòðóêòóðîþ òèïó «êðåìí³é íà ñàïô³ð³», òåõíîëîã³ÿ ÊÌÎÍ ²Ñ ç ÊÍÑ-ñòðóêòóðîþ composite ñåll logic ~- ìåòîä ïðîåêòóâàííÿ ëîã³÷íèõ Â²Ñ íà îñíîâ³ áàçîâèõ ìàòðè÷íèõ êðèñòàë³â contact ~ 1. òåõíîëîã³ÿ âèãîòîâëåííÿ êîíòàêò³â 2. êîíòàêòíà ë³òîãðàô³ÿ conventional ~ ñòàíäàðòíà òåõíîëîã³ÿ deep îõide isolation ~ ãëèáîêà ³çîëÿö³ÿ îêñèäîì DIFET ~ òåõíîëîã³ÿ ²Ñ (îïåðàö³éíèõ ï³äñèëþâà÷³â) íà ïîëüîâèõ òðàíçèñòîðàõ ç ä³åëåêòðè÷íîþ ³çîëÿö³ºþ diffused eutectic aluminum ~ äèôóç³ÿ àëþì³í³þ äëÿ ôîðìóâàííÿ àëþì³í³ºâî¿ åâòåêòèêè (äëÿ ïðîãðàìóâàííÿ ÏÏÇÏ) direct synthesis and crystal pull ~ òåõíîëîã³ÿ ïðÿìîãî ñèíòåçó ³ âèòÿãàííÿ ìîíîêðèñòàëà double-diffused ~ ïîäâ³éíà [äâîêðàòíà] äèôóç³ÿ double ion-implanted ~ ïîäâ³éíà [äâîêðàòíà] ³îííà ³ìïëàíòàö³ÿ double-layer polysilicon gate (MOS) ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç äâîð³âíåâèìè ïîë³êðåìí³ºâèìè çàòâîðàìè epitaxial (deposition) ~ î ñàäæåííÿ åï³òàêñ³àëüíîãî øàðó epitaxial growth ~ åï³òàêñ³àëüíå âèðîùóâàííÿ, åï³òàêñ³ÿ flip-over ~ ìåòîä ïåðåâåðíåíîãî êðèñòàëà floating-gate silicon ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç ïëàâàþ÷èìè êðåìí³ºâèìè çàòâîðàìè front-end ~ òåõíîëîã³ÿ îáðîáêè íàï³âïðîâ³äíèêîâèõ ïëàñòèí (äëÿ ôîðìóâàííÿ êðèñòàë³â ²Ñ) gold-doped ~ òåõíîëîã³ÿ ²Ñ ç âèêîðèñòàííÿì ëåãóâàííÿ çîëîòîì guard-banded CMOS ~ òåõíîëîã³ÿ ÊÌÎÍ ²Ñ ï:ç îõîðîííèìè ê³ëüöÿìè heterogeneous ~ ãåòåðîãåííèé ïðîöåñ high-voltage ~ òåõíîëîã³ÿ âèñîêîâîëüòíèõ ²Ñ HMOS ~ òåõíîëîã³ÿ HMOS (ô³ðìîâà íàçâà ïðîöåñó âèãîòîâëåííÿ âèñîêîÿê³ñíèõ ÌÎÍ Â²Ñ) imaging ~ ôîðìóâàííÿ ìàëþíêà; ôîðìóâàííÿ ðåëüºôó implantation ~ ³îííà ³ìïëàíòàö³ÿ, ³îííå ëåãóâàííÿ
pro in-house ~ òåõíîëîã³ÿ ²Ñ âëàñíîãî âèðîáíèöòâà interconnection ~ ôîðìóâàííÿ ì³æç’ºäíàíü inverted meniscus ~ ìåòîä çâîðîòíîãî ìåí³ñêà (äëÿ âèðîùóâàííÿ ïîë³êðåìí³ºâî¿ ïë³âêè) ion plating ~ åëåêòðîë³òè÷íèé ìåòîä íàíåñåííÿ ïîêðèòò³â isoplanar (-S, -Z, -2) ~ ³çîïëàíàðíà òåõíîëîã³ÿ (S, Z, 2 -ìîäèô³êàö³¿ ïîäàëüøîãî ðîçâèòêó ïðîöåñó) junction-isolated ~ òåõíîëîã³ÿ ²Ñ ç ³çîëÿö³ºþ ð–n-ïåðåõîäàìè laser-recrystallized ~ ëàçåðíà ðåêðèñòàë³çàö³ÿ lithographic [lithography] ~ ë³òîãðàô³ÿ low-pressure ~ ïðîöåñ, ùî ïðîâîäèòüñÿ ïðè íèçüêîìó òèñêó ãàçîïîä³áíîãî ñåðåäîâèùà low VT ~ òåõíîëîã³ÿ (âèãîòîâëåííÿ) ÌÎÍ ²Ñ ç íèçüêîþ ïîðîãîâîþ íàïðóãîþ major ~ áàçîâà òåõíîëîã³ÿ masking ~ 1. òåõíîëîã³ÿ ôîðìóâàííÿ ìàñêóþ÷îãî øàðó 2. ìåòîä íàíåñåííÿ ôîòîðåçèñòíî¿ ìàñêè 3. ôîòîìàñêóâàííÿ master slice ~ òåõíîëîã³ÿ ²Ñ íà îñíîâ³ áàçîâîãî ìàòðè÷íîãî êðèñòàëà mesa-isolation ~ ìåòîä ³çîëÿö³¿ ìåçàñòðóêòóðàìè metal-gate (MOS) ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç ìåòàëåâèìè çàòâîðàìè microbipolar LSI ~ òåõíîëîã³ÿ á³ïîëÿðíèõ Â²Ñ ç íèçüêîþ ñïîæèâàíîþ ïîòóæí³ñòþ micrometer-dimension ~ òåõíîëîã³ÿ ²Ñ ç åëåìåíòàìè ì³êðîííèõ ðîçì³ð³â mid-film ~ òåõíîëîã³ÿ òîâñòîïë³âêîâèõ Ã²Ñ ç âèñîêîþ ãóñòèíîþ óïàêîâêè Minimod ~ ìåòîä «ì³í³ìîä» (äëÿ çá³ðêè ²Ñ íà ñòð³÷êîâèõ íîñ³ÿõ) Mo-gate (MOS) ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç ìîë³áäåíîâèìè çàòâîðàìè nitride ~ 1. òåõíîëîã³ÿ ÌÍÎÏ ²Ñ 2. ìåòîä ôîðìóâàííÿ øàðó í³òðèäó êðåìí³þ nitrideless ~ áåçí³òðèäíà òåõíîëîã³ÿ NSA ~ òåõíîëîã³ÿ á³ïîëÿðíèõ ²Ñ ç ñàìî ñóì³ùåíîþ ìàñêîþ ³ í³òðèäíîþ ïàñèâàö³ºþ oxide-film isolation ~ ³çîëÿö³ÿ åëåìåíò³â ²Ñ îêñèäíîþ ïë³âêîþ oxide isolated ~ ³çîëÿö³ÿ îêñèäîì, îêñèäíà ³çîëÿö³ÿ
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oxygen refilling ~ ïðîöåñ çàïîâíåííÿ êèñíåâèõ âàêàíñ³é patterning ~ ôîðìóâàííÿ ìàëþíêà; ôîðìóâàííÿ ðåëüºôó phosphorous buried-emitter ~ ìåòîä ôîðìóâàííÿ åì³òåðíèõ ïðèõîâàíèõ øàð³â, ëåãîâàíèõ ôîñôîðîì photoablative ~ ïðîöåñ ôîòîàáëÿö³¿, ôîòîàáëÿö³ÿ photolithography [photoresist] ~ ôîòîë³òîãðàô³ÿ, îïòè÷íà ë³òîãðàô³ÿ planar oxidation ~ 1. òåõíîëîã³ÿ «Ïëàíîêñ” (äëÿ âèãîòîâëåííÿ ÌÎÍ Â²Ñ) 2. ³çîëÿö³ÿ îêñèäîì, îêñèäíà ³çîëÿö³ÿ Planox ~ òåõíîëîã³ÿ «Ïëàíîêñ» (äëÿ âèãîòîâëåííÿ ÌÎÍ Â²Ñ) plasma etch ~ ïëàçìîâå òðàâëåííÿ Poly I ~ ïðîöåñ «Ïîëè I» (äëÿ âèãîòîâëåííÿ n-ÌÎÍ ²Ñ ç êðåìí³ºâèìè, çàòâîðàìè ³ îäíèì øàðîì ïîë³êðåìí³þ) Poly II ~ ïðîöåñ «Ïîëè II» (äëÿ âèãîòîâëåííÿ n-ÌÎÍ ²Ñ ç êðåìí³ºâèìè çàòâîðàìè ³ äâîìà øàðàìè ïîë³êðåìíî³þ) Poly 5 ~ ñì. scaled Poly 5 process poly-oxide ~ (êîìá³íîâàíà) ³çîëÿö³ÿ åëåìåíò³â ²Ñ ïîë³êðèñòàëè÷åñêèì êðåìí³ºì ³ îêñèäîì êðåìí³þ Poly-Si [polysilicon-gate] ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç ïîë³êðåìí³ºâèìè çàòâîðàìè poly-squared MOS ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç äâîìà øàðàìè ïîë³êðèñòàë³÷íîãî êðåìí³þ proprietary ~ âëàñíà òåõíîëîã³ÿ PSA (bipolar) ~ òåõíîëîã³ÿ á³ïîëÿðíèõ ²Ñ ç ñàìîñóì³ùåíèìè îáëàñòÿìè ³ ïîë³êðåìí³ºâèìè ðåçèñòîðàìè refractory metal (MOS) ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ³ç çàòâîðàìè ç òóãîïëàâêîãî ìåòàëó sacrificial îõide ~ ïðîì³æíå îêñèäóâàííÿ; ôîðìóâàííÿ ïðîì³æíîãî îêñèäíîãî øàðó sapphire dielectric isolation ~ òåõíîëîã³ÿ ²Ñ ³ç ñòðóêòóðîþ òèïó «êðåìí³é íà ñàïô³ð³», òåõíîëîã³ÿ ²Ñ ç ÊÍÑ-ñòðóêòóðîþ scaled Poly 5 ~ òåõíîëîã³ÿ ìàñøòàáîâàíèõ ³îííî-ëåãîâàíèõ n-ÌÎÍ ²Ñ ç êðåìí³ºâèìè çàòâîðàìè ³ äâîìà øàðàìè ïîë³êðèñòàë³÷íîãî êðåìí³þ screen-and-fire ~ òîâñòîïë³âêîâà òåõíîëîã³ÿ selective field-îõidation ~ âèá³ðêîâå ôîðìóâàííÿ çàõèñíîãî øàðó îêñèäó
pro self-aligned [self-registered] (gate) ~ wet ~ òåõíîëîã³ÿ ð³äèííî¿ õ³ì³÷íî¿ îáðîáêè òåõíîëîã³ÿ ÌÎÍ ²Ñ ç ñàìîñóì³ùåíèìè 3-D ~ ïîòð³éíà äèôóç³ÿ çàòâîðàìè processing 1. (òåõíîëîã³÷íà) îáðîáêà; semi-additive ~ íàï³âàääèòèâíà òåõíîëîã³ÿ ïðîâåäåííÿ ïðîöåñó 2. òåõíîëîã³ÿ (äèâ. ò-æ (äðóêîâàíî¿ ïëàòb) process, technique, technology) 3. îáðîáêà semiconductor-thermoplastic-dielectric ~ (³íôîðìàö³¿) òåõíîëîã³ÿ Ã²Ñ íà ä³åëåêòðè÷í³é ï³äêëàäö³ aqueous ~ îáðîáêà ó âîäíèõ ðîç÷èíàõ; ³ç çàõèñíèì øàðîì òåðìîïëàñòó îáðîáêà ó âîä³ semicustom ~ òåõíîëîã³ÿ íàï³âçàìîâëåíèõ array ~ îáðîáêà ìàòðèöü (äëÿ âèãîòîâëåííÿ ²Ñ ìàòðè÷íèõ ²Ñ) shadow masking ~ (ì³êðîåëåêòðîííà) batch(-mode)~ ãðóïîâà îáðîáêà òåõíîëîã³ÿ âèãîòîâëåííÿ ò³íüîâèõ ìàñîê beam ~ åëåêòðîííî-ïðîìåíåâà îáðîáêà silk-screen ~ òðàôàðåòíèé äðóê, ñsòêîãðàôsÿ bipolar ~ á³ïîëÿðíà òåõíîëîã³ÿ single poly ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç îäíèì chip ~ îáðîáêà êðèñòàë³â ²Ñ íà ïîë³êðåìí³ºâèì çàòâîðîì íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ SMOS ~ òåõíîëîã³ÿ SMOS (âèãîòîâëåííÿ CMOS/SOS ~ òåõíîëîã³ÿ ÊÌÎÍ ²Ñ ç ÊÍÑìàñøòàáîâàíèõ ÌÎÍ ²Ñ ç ñàìîñóì³ùåíèìè ñòðóêòóðîþ çàòâîðàìè ³ êàíàëàìè ñóáì³êðîííî¿ component (pre-insertion) ~ ï³äãîòîâêà äîâæèíè) êîìïîíåíò³â (íàïð. äî ìîíòàæó íà SOS/CMOS ~ òåõíîëîã³ÿ ÊÌÎÍ ²Ñ ³ç äðóêîâàí³é ïëàò³) ñòðóêòóðîþ òèïó «êðåìí³é íà ñàïô³ð³», computer word ~ îáðîáêà òåêñò³â íà ÅÎÌ òåõíîëîã³ÿ ÊÌÎÍ ²Ñ ç ÊÍÑ-ñòðóêòóðîþ digital image ~ öèôðîâà îáðîáêà çîáðàæåíü stacked fuse bipolar ~ òåõíîëîã³ÿ dry ~ ñóõà îáðîáêà (áåç âæèâàííÿ ð³äêèõ ïðîãðàìîâàíèõ á³ïîëÿðíèõ ²Ñ ÇÏ ç ðåàêòèâ³â) ïëàâêèìè ïåðåìè÷êàìè electroless ~ îñàäæåííÿ ìåòîäîì õ³ì³÷íîãî Stalicide ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç â³äíîâëåííÿ ñàìîñóì³ùåíèìè äâîøàðîâèìè çàòâîðàìè electron-beam ~ àëåêòðîííî-ïðîìåíåâà ç äèñèë³öèäó òèòàíà ³ ïîëóêðåìí³þ îáðîáêà step-and-repeat ~ ïîñë³äîâíà êðîêîâà epitaxial ~ îñàäæåííÿ åï³òàêñ³àëüíîãî øàðó ìóëüòèïë³êàö³ÿ excimer laser ~ òåõíîëîã³ÿ ³ç çàñòîñóâàííÿì subtractive-fabrication ~ ñóáòðàêòèâíà åêñèìåðíîãî ëàçåðà òåõíîëîã³ÿ exposive-shock ~ óäàðíî-âèáóõîâà îáðîáêà surface ~ ïðîöåñ íà ïîâåðõí³ (íàïð. íàäïðîâ³äíèê³â) Telemos ~ ïðîöåñ «Òåëåìîñ» (äëÿ fabrication ~ 1. òåõíîëîã³÷íà îáðîáêà 2. âèãîòîâëåííÿ ÌÎÍ ²Ñ ô³ðìè «Òåëåôóíêåí») òåõíîëîã³ÿ âèãîòîâëåííÿ thermal ~ òåðì³÷íèé ïðîöåñ hands-off ~ àâòîìàòè÷íà îáðîáêà thermally àñtivated surface ~ high-resolution ~ ôîòîë³òîãðàô³ÿ ç âèñîêèì òåðìîàêòèâîâàíèé (ãåòåðîãåííèé) ïðîöåñ äîçâîëîì íà ïîâåðõí³ high-temperature ~ òåðì³÷íà thermal-îõidation ~ òåðì³÷íå [âèñîêîòåìïåðàòóðíà] îáðîáêà, [âèñîêîòåìïåðàòóðíå] îêñèäóâàííÿ òåðìîîáðîáêà three-mask ~ òåõíîëîã³ÿ ²Ñ ç âèêîðèñòàííÿì high-volume ~ îáðîáêà âåëèêèõ ïàðò³é òðüîõ ôîòîøàáëîí³â (íàïð. íàï³âïðîâ³äíèêîâèõ ïëàñòèí) triple-diffused ~ ïîòð³éíà äèôóç³ÿ high-yield ~ òåõíîëîã³ÿ ç âèñîêèì â³äñîòêîì triply-poly ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç òðüîìà âèõîäó ãîäíèõ øàðàìè ïîë³êðèñòàë³÷íîãî êðåìí³þ image ~ îáðîáêà çîáðàæåíü twin-tub [twin-well] ~ äâîõêèøåíüêîâà in-line ~ ïîòîêîâà îáðîáêà òåõíîëîã³ÿ (ÊÌÎÍ ²Ñ) ion-beam ~ ³îííî-ïðîìåíåâà îáðîáêà V-groove (MOS) ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç Vion-implantation ~ ³îííà ³ìïëàíòàö³ÿ, ³îííå ïîä³áíèìè êàíàâêàìè ëåãóâàííÿ
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pro isothermal ~ ³çîòåðì³÷íà îáðîáêà thermal ~ òåðì³÷íà îáðîáêà, òåðìîîáðîáêà laser cold ~ ëàçåðíà îáðîáêà unattended ~ àâòîìàòè÷íà îáðîáêà; (íàï³âïðîâ³äíèê³â) äóæå êîðîòêèìè áåçëþäíà òåõíîëîã³ÿ ³ìïóëüñàìè, õîëîäíà ëàçåðíà îáðîáêà vertical ~ îáðîáêà ñòðóêòóð ó âåðòèêàëüíîìó liquid (chemical) ~ ð³äèííà õ³ì³÷íà îáðîáêà íàïðÿì³ lithographic ~ ë³òîãðàô³ÿ wafer-by-wafer ~ ïîñë³äîâíà òåõíîëîã³÷íà maskless ~ îáðîáêà (íàï³âïðîâ³äíèêîâèõ îáðîáêà íàï³âïðîâ³äíèêîâèõ ïëàñòèí ïëàñòèí) áåç âæèâàííÿ ôîòîðåçèñòíèõ wet (chemical) ~ ð³äèííà õ³ì³÷íà îáðîáêà ìàñîê processor 1. ïðîöåñîð; ì³êðîïðîöåñîð (äèâ. microelectronic ~ ì³êðîåëåêòðîííà ò-æ microprocessor) 2. óñòàíîâêà äëÿ òåõíîëîã³ÿ (òåõíîëîã³÷íî¿) îáðîáêè microgravity ~ îáðîáêà (íàï³âïðîâ³äíèê³â) application-specific ~ ñïåö³àë³çîâàíèé â óìîâàõ íåâàãîìîñò³ (íàïð. â êîñì³÷íîìó ì³êðîïðîöåñîð ïðîñòîð³) bisynchronous communication ~ ïðîöåñîð MOS ~ òåõíîëîã³ÿ ÌÎÍ-ñòðóêòóð ñèñòåìè äâ³éêîâî¿ ñèíõðîííî¿ ïåðåäà÷³ multimask ~ áàãàòîêðàòíà ôîòîë³òîãðàô³ÿ äàíèõ (â ïðîöåñîðíèõ ²Ñ) multiple-chemical ~ áàãàòîêðàòíà õ³ì³÷íà bit-slice ~ ñåêö³îíîâàíèé ì³êðîïðîöåñîð îáðîáêà burst error ~ ïðîöåñîð äëÿ îáðîáêè ïàêåò³â on-line data ~ îáðîáêà äàíèõ â ðåàëüíîìó ç ïîìèëêàìè (â ïðîöåñîðíèõ ²Ñ) ÷àñ³ chip-set ~ áàãàòîêðèñòàëüíèé pel-to-pel ~ ïîåëåìåíòíà îáðîáêà çîáðàæåíü ì³êðîïðîöåñîð photochemical ~ ôîòîõ³ì³÷íà îáðîáêà distributed array ~ ðîçïîä³ëåíèé photoresist ~ îáðîáêà ôîòîðåçèñòà; ìàòðè÷íèé ïðîöåñîð ôîòîë³òîãðàô³ÿ etch/rinse (semiconductor) ~ óñòàíîâêà äëÿ pipeline ~ êîíâåéºðíà îáðîáêà äàíèõ òðàâëåííÿ ³ ïðîìèâêè íàï³âïðîâ³äíèêîâèõ planar ~ 1. îáðîáêà ïëàíàðíèõ ñòðóêòóð 2. ïëàñòèí ïëàíàðíà òåõíîëîã³ÿ fail-stop VLSI ~ (îäíîêðèñòàëüíèé) planar plasma ~ ïëàçìîâà îáðîáêà â ïðîöåñîð, ùî ïðèïèíÿº ðîáîòó ïðè ïîÿâ³ ïëàíàðíîìó ðåàêòîð³ ïîìèëêè plasma ~ îáðîáêà â ïëàçì³ high-end ~ âèñîêîÿê³ñíèé ì³êðîïðîöåñîð (ç post ion-implantation ~ îáðîáêà (íàïð. ðîçðÿäí³ñòþ âèùå 8 á³ò) â³äïàë) ï³ñëÿ ³îííî¿ ³ìïëàíòàö³¿ IC ~ 1. Â²Ñ ì³êðîïðîöåñîðà, pyrolytic laser ~ ëàçåðíèé ï³ðîë³ç ì³êðîïðîöåñîðíà Â²Ñ 2. óñòàíîâêà äëÿ radiation-free ~ íåïðîìåíåâà îáðîáêà; îáðîáêè íàï³âïðîâ³äíèêîâèõ ïëàñòèí â îáðîáêà, ùî íå âíîñèòü ðàä³àö³éíèõ ïðîöåñ³ âèðîáíèöòâà ²Ñ äåôåêò³â in-line IC ~ óñòàíîâêà äëÿ ïîòîêîâî¿ relief-mask ~ îáðîáêà ç âèêîðèñòàííÿì îáðîáêè íàï³âïðîâ³äíèêîâèõ ïëàñòèí â ðåëüºôíèõ ìàñîê (äëÿ òîíêîïë³âêîâèõ òÑ) ïðîöåñ³ âèðîáíèöòâà ²Ñ single-wafer (semiconductor) ~ ïîñë³äîâíà large-scale integration ~ 1. ïðîöåñîð íà Â²Ñ îáðîáêà íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè 2. Â²Ñ ì³êðîïðîöåñîðà, ì³êðîïðîöåñîðíà slice-at-a-time ~ îäèíàðíà îáðîáêà ïëàñòèí Â²Ñ (íà â³äì³íó â³ä ãðóïîâî¿) laser ceramic ~ ëàçåðíà óñòàíîâêà äëÿ space semiconductor ~ îáðîáêà îáðîáêè êåðàì³÷íèõ ìàòåð³àë³â íàï³âïðîâ³äíèêîâèõ ìàòåð³àë³â â êîñìîñ³ low-end ~ ì³êðîïðîöåñîð øèðîêîãî submicrometer [submicron] ~ îáðîáêà äëÿ âæèâàííÿ (4- ³ 8-ðîçðÿäí³) ôîðìóâàííÿ ñóáì³êðîííèõ ñòðóêòóð LSI ~ Â²Ñ ì³êðîïðîöåñîðà, TAB ~ àâòîìàòè÷íà çá³ðêà ²Ñ íà ñòð³÷êîâîìó ì³êðîïðîöåñîðíà Â²Ñ íîñ³¿ microprogrammed ~ ïðîöåñîð ç temperature-gradient zone-melting ~ çîííà ì³êðîïðîãðàìíèì óïðàâë³ííÿì ïëàâêà ç òåìïåðàòóðíèì ãðà䳺íòîì
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pro monolithic [one-chip] ~ îäíîêðèñòàëüíèé in-line ~ ïîòîêîâå âèðîáíèöòâî ì³êðîïðîöåñîð large-scale ~ âåëèêîñåð³éíå âèðîáíèöòâî network signal ~ ìåðåæíèé ïðîöåñîð off-the-shelf ~ âèðîáíèöòâî ñòàíäàðòíèõ ñèãíàë³â ïðèëàä³â photomask ~ óñòàíîâêà ôîòîë³òîãðàô³¿ pilot [prototype] ~ âèðîáíèöòâî äîñë³äíèõ plasma ~ ïëàçìîâèé ðåàêòîð çðàçê³â, äîñë³äíå âèðîáíèöòâî signal ~ ïðîöåñîð îáðîáêè ñèãíàë³â small-batch [small-lot, small-scale] ~ slave ~ ï³äëåãëèé ïðîöåñîð äð³áíîñåð³éíå âèðîáíèöòâî wet etch ~ óñòàíîâêà äëÿ ð³äèííîãî profile 1. ïðîô³ëü | ïðîô³ëþâàòè 2. ðîçð³ç; òðàâëåííÿ ïåðåòèí producibility 1. òåõíîëîã³÷í³ñòü 2. ~ etch feature ïðîô³ëü òðàâëåííÿ åëåìåíòó â³äòâîðí³ñòü Auger depth ~ ïðîô³ëü (ðîçïîä³ëè ïî product: ãëèáèí³), çì³ðÿíèé ìåòîäîì åëåêòðîííî¿ bubble (memory) ~ ÇÏ íà ÖÌÄ îæå-ñïåêòðîñêîﳿ custom LSI ~ çàìîâëåíà ²Ñ; ñïåö³àë³çîâàíà charge-carrier density ~ ïðîô³ëü ðîçïîä³ëó Â²Ñ íîñ³¿â çàðÿäó delay-dissipation ~ äîáóòîê ÷àñó çàòðèìêè chip ~ ôîðìà êðèñòàëà ñèãíàëó íà ïîòóæí³ñòü ðîçñ³þâàííÿ concentration ~ ïðîô³ëü ðîçïîä³ëó discharge ~s ðå÷îâèíè, ùî óòâîðþþòüñÿ êîíöåíòðàö³¿, êîíöåíòðàö³éíèé ïðîô³ëü ïðè åëåêòðè÷íîìó ðîçðÿä³ density ~ ïðîô³ëü ðîçïîä³ëó ãóñòèíè electronic ~ åëåêòðîííèé ïðèëàä depth ~ ïðîô³ëü ðîçïîä³ëó ëåãóþ÷î¿ high-technology ~ âèð³á, âèãîòîâëåíèé çà äîì³øêè ïî ãëèáèí³ ïåðåäîâîþ òåõíîëî㳺þ diffusion ~ äèôóç³éíèé ïðîô³ëü impurity concentration-thickness ~ äîáóòîê dopant [doping] ~ ïðîô³ëü ðîçïîä³ëó êîíöåíòðàö³¿ (ëåãóþ÷î¿) äîì³øêè íà ëåãóþ÷î¿ äîì³øêè òîâùèíó øàðó drift mobility ~ ïðîô³ëü äðåéôîâî¿ integrated ~ ³íòåãðàëüíà ñõåìà, ²Ñ ðóõëèâîñò³ LSI-IEC ~ ²Ñ, ÿêà â³äïîâ³äàþ âèìîãàì etch ~ ïðîô³ëü òðàâëåííÿ ÌÅÊ firing ~ ïðîô³ëü ðîçïîä³ëó òåìïåðàòóðè ïðè microprocessor ~ ì³êðîïðîöåñîð âèïàëåíí³ off-the-shelf ~ ñòàíäàðòíèé ïðèëàä Gaussian impurity ~ ïðîô³ëü ðîçïîä³ëó power-delay ~ äîáóòîê ÷àñó çàòðèìêè äîì³øêè ïî Ãàóñó ñèãíàëó íà ïîòóæí³ñòü ðîçñ³ÿííÿ graded ~ ïëàâíèé ïðîô³ëü (ðîçïîä³ëè reaction ~ ïðîäóêò õ³ì³÷íî¿ ðåàêö³¿ ëåãóþ÷î¿ äîì³øêè) speed-power ~ äîáóòîê ÷àñó çàòðèìêè hyperabrupt ~ íàäð³çêèé ïðîô³ëü ñèãíàëó íà ïîòóæí³ñòü ðîçñ³ÿííÿ (ðîçïîä³ëè ëåãóþ÷î¿ äîì³øêè) standard off-the-shelf ~ ñòàíäàðòíèé ïðèëàä impurity ~ ïðîô³ëü ðîçïîä³ëó ëåãóþ÷î¿ production âèãîòîâëåííÿ; âèðîáíèöòâî äîì³øêè batch ~ âèãîòîâëåííÿ çà ãðóïîâîþ ion-implantation ~ ïðîô³ëü ðîçïîä³ëó òåõíîëî㳺þ äîì³øêè ïðè ³îíí³é ³ìïëàíòàö³¿ captive ~ âëàñíå âèðîáíèöòâî lateral doping ~ ïðîô³ëü ðîçïîä³ëó äîì³øêè custom chip ~ âèðîáíèöòâî çàìîâëåíèõ ²Ñ; â ãîðèçîíòàëüíîìó íàïðÿì³ âèðîáíèöòâî ñïåö³àë³çîâàíèõ ²Ñ low ~ íèçüêèé ïðîô³ëü (íàïð. ïðî âèñîòó electron-hole ~ óòâîðåííÿ åëåêòðîííîêîðïóñó) ä³ðêîâèõ ïàð n ~ ïðîô³ëü ðîçïîä³ëó äîíîðíî¿ äîì³øêè flow-line ~ ïîòîêîâå âèðîáíèöòâî p ~ ïðîô³ëü ðîçïîä³ëó àêöåïòîðíî¿ äîì³øêè full-scale [high-volume] ~ âåëèêîñåð³éíå potential ~ ïðîô³ëü ðîçïîä³ëó ïîòåíö³àëó âèðîáíèöòâî resist ~ ïðîô³ëü ðåçèñòà industrial-scale ~ ïðîìèñëîâå âèðîáíèöòâî resistivity ~ ïðîô³ëü ðîçïîä³ëó ïèòîìîãî in-house ~ âëàñíå âèðîáíèöòâî îïîðó
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pro solder-melt ~ ïðîô³ëü ðîçïëàâëåíîãî ïðèïîþ (íà ä³ëÿíö³ ïàÿííÿ), ôîðìà ç’ºäíàííÿ ïðèïîþ tailored doping ~ êîíòðîëüîâàíèé ïðîô³ëü ðîçïîä³ëó äîì³øêè undercut ~ ïðîô³ëü çàòðóþâàííÿ vertical doping ~ ïðîô³ëü ðîçïîä³ëó äîì³øêè ó âåðòèêàëüíîìó íàïðÿì³ profiler ïðèëàä äëÿ âèì³ðþâàííÿ ïðîô³ëþ, ïðîô³ëüîìåòð mechanical surface ~ ìåõàí³÷íèé ïðîô³ëüîìåòð ïîâåðõí³ scanning ~ ñêàíóþ÷èé ïðîô³ëüîìåòð self-leveling ~ ïðèëàä äëÿ âèì³ðþâàííÿ ïðîô³ëþ ïîâåðõí³, ùî ñàìîâñòàíîâëþºòüñÿ program ïðîãðàìà | ïðîãðàìóâàòè CAD ~ ïðîãðàìà àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ checkpointing ~ ïðîãðàìà ðîçñòàíîâêè êîíòðîëüíèõ òî÷îê confidence test ~ ïðîãðàìà ïåðåâ³ðêè íà äîñòîâ³ðí³ñòü debug(ging)~ íàëàãîäæóâàëüíà ïðîãðàìà Isoplanar-S ~ ïðîãðàìà âèãîòîâëåííÿ Â²Ñ ç åëåìåíòàìè ïðîïîðö³éíî çìåíøåíèõ ðîçì³ð³â çà ³çîïëàíàðíîþ òåõíîëî㳺þ language conversion ~ ïðîãðàìà ïåðåòâîðåííÿ ìîâè operational development ~ ïðîãðàìà ôóíêö³îíàëüíî¿ ðîçðîáêè physical design automation ~ ïðîãðàìà àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ íà ô³çè÷íîìó ð³âí³ placement ~ ïðîãðàìà ìîíòàæó êîìïîíåíò³â routing ~ ïðîãðàìà òðàñóâàííÿ, òðàñóâàëüíèê screening ~ ïðîãðàìà â³äáðàêóâàííÿ special-purpose ~ ñïåö³àë³çîâàíà ïðîãðàìà standard circuit analysis ~ ñòàíäàðòíà ïðîãðàìà àíàë³çó ñõåìîòåõí³êè tapeout ~ ïðîãðàìà âèâîäó íà (ìàãí³òíó) ñòð³÷êó testout ~ ïðîãðàìà òåñòóâàííÿ VHSIC ~ ïðîãðàìà ñòâîðåííÿ íàäøâèäê³ñíèõ ²Ñ wire routing ~ ïðîãðàìà òðàñóâàííÿ, òðàñóâàëüíèê programmability ïðîãðàìîâàí³ñòü, ìîæëèâ³ñòü ïðîãðàìóâàííÿ
fuse-link ~ ìîæëèâ³ñòü ïðîãðàìóâàííÿ çà äîïîìîãîþ ïëàâêèõ ïåðåìè÷îê programmable 1. ïðîãðàìîâàíèé 2. ç ïðîãðàìíèì óïðàâë³ííÿì electron-beam ~ ïðîãðàìîâàíèé åëåêòðîííèì ïðîìåíåì electronically ~ åëåêòðè÷íî ïðîãðàìîâàíèé fuse-link ~ ïðîãðàìîâàíèé ïëàâêèìè ïåðåìè÷êàìè programmed 1. ïðîãðàìîâàíèé 2. ç ïðîãðàìíèì óïðàâë³ííÿì internally ~ ïðàöþþ÷èé çà ïðîãðàìîþ, ÿêà çáåð³ãàºòüñÿ ó âíóòð³øí³é ïàì’ÿò³ programmer 1. ïðîãðàìóþ÷èé ïðèñòð³é, ïðîãðàìàòîð 2. ïðîãðàì³ñò programming ïðîãðàìóâàííÿ branch-bound mixed integer ~ ÷àñòêîâîö³ëî÷èñåëüíå ïðîãðàìóâàííÿ ç âèêîðèñòàííÿì àëãîðèòìó ã³ëîê ³ ìåæ (â ÑÀÏР²Ñ) in-circuit ~ âíóòð³øíüîñõåìíå ïðîãðàìóâàííÿ make-link ~ ïðîãðàìóâàííÿ (ïëàâêèìè) ïåðåìè÷êàìè (íàïð. ÏËÌ) project 1. ïðîåêò | ïðîåêòóâàòè 2. ïðîåêòóâàòè (íàïð. åëåêòðîííèé ïðîì³íü) 3. âèñòóïàòè, âèäàâàòèñÿ turnkey ~ ïðîåêò ï³ä êëþ÷, ïîâí³ñòþ çàâåðøåíèé ïðîåêò projection 1. ïðîåêòóâàííÿ 2. ïðîåêòóâàííÿ (íàïð. åëåêòðîííîãî ïðîìåíÿ) 3. âèñòóï 4. ïðîåêö³éíà ë³òîãðàô³ÿ (äèâ. ò-æ lithography) demagnifying electron(-beam)~ åëåêòðîííîïðîìåíåâà ïðîåêö³éíà ë³òîãðàô³ÿ ³ç çìåíøåííÿì çîáðàæåííÿ electron(-beam)~ 1. ïðîåêòóâàííÿ åëåêòðîííîãî ïðîìåíÿ (íà îáðîáëþâàíèé îá’ºêò) 2. åëåêòðîííî-ïðîìåíåâà ïðîåêö³éíà ë³òîãðàô³ÿ semiconductor ~ âèñòóï íà ïîâåðõí³ íàï³âïðîâ³äíèêà yield ~ ïðîãíîçóâàííÿ âèõîäó ãîäíèõ (²Ñ) projector óñòàíîâêà ïðîåêö³éíî¿ ë³òîãðàô³¿ (äèâ. ò-æ aligner) electron(-beam)~ 1. óñòàíîâêà åëåêòðîííîïðîìåíåâî¿ ïðîåêö³éíî¿ ë³òîãðàô³¿ 2. åëåêòðîííà ãàðìàòà electron image ~ óñòàíîâêà åëåêòðîííîïðîìåíåâî¿ ïðîåêö³éíî¿ ë³òîãðàô³¿
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pur promotion: electronic ~ åëåêòðîííå ñòèìóëþâàííÿ (íàïð. ïðîöåñó àçîòèçàö³¿) propagation: bubble ~ ïðîñóâàííÿ ÖÌÄ fault ~ ïåðåì³ùåííÿ äåôåêò³â; ðîçïîâñþäæåííÿ äåôåêò³â propert/y: anisotropic etch ~ âëàñòèâ³ñòü àí³çîòðîïíîãî òðàâíèêà bulk ~ies îá’ºìí³ âëàñòèâîñò³ doping ~ âëàñòèâ³ñòü ëåãóþ÷î¿ äîì³øêè extrinsic ~ies âëàñòèâîñò³ ìàòåð³àëó ç äîì³øêîâîþ åëåêòðîïðîâ³äí³ñòþ intrinsic ~ies âëàñòèâîñò³ ìàòåð³àëó ç âëàñíîþ åëåêòðîïðîâ³äí³ñòþ transport ~ õàðàêòåðèñòèêà ïðîöåñó ïåðåíåñåííÿ (íîñ³¿â çàðÿäó) protection: alpha-particle ~ (ðàä³àö³éíà) çàõèñò â³ä àëüôà-÷àñòîê built-in power-supply ~ âáóäîâàíèé çàõèñò äæåðåëà æèâëåííÿ memory ~ çàõèñò ïàì’ÿò³ static ~ çàõèñò â³ä ñòàòè÷íî¿ åëåêòðèêè protector çàõèñíèé ïðèñòð³é (íàïð. äëÿ ²Ñ) protocol: advanced data communication ~ âäîñêîíàëåíèé ïðîòîêîë ïåðåäà÷³ äàíèõ demand assignment ~ ïðîòîêîë íàäàííÿ êàíàë³â àáî ðåñóðñ³â íà âèìîãó multinumbered selective reject ~ âèáîð÷èé ïðîòîêîë â³äìîâ ç ð³çíèìè íîìåðàìè ïîìèëêîâèõ êîä³â protopack äîñë³äíèé çðàçîê êîðïóñó prototype (äîñâ³ä÷åíèé) çðàçîê; ìàêåò; ìîäåëü | âèãîòîâëÿòè äîñë³äíèé çðàçîê; ìàêåòóâàòè; ìîäåëþâàòè brassboard [breadboard] ~ ìàêåò p-type ä³ð÷àñòèé, ð-òèïó (ïðî åëåêòðîïðîâ³äí³ñòü) puck: “hockey ~” óñòàíîâêà äëÿ ðîçä³ëåííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí íà êðèñòàëè (ï³ñëÿ ñêðàéáóâàííÿ) puller: bond ~ ïðèñòð³é äëÿ íàòÿãóâàííÿ äðîòÿíèõ âèâîä³â (ïðè âèïðîáóâàíí³ íà â³äðèâ) crystal ~ óñòàíîâêà äëÿ âèðîùóâàííÿ ìîíîêðèñòàë³â ìåòîäîì âèòÿãàííÿ
Czochralski (crystal) ~ óñòàíîâêà äëÿ âèòÿãàííÿ ìîíîêðèñòàë³â ìåòîäîì ×îõðàëüñüêîãî LEG ~ óñòàíîâêà äëÿ âèòÿãàííÿ ìîíîêðèñòàë³â ç îáâîë³êàííÿì ðîçïëàâó ³íåðòíîþ ð³äèíîþ pulling: crystal ~ âèðîùóâàííÿ ìîíîêðèñòàë³â ìåòîäîì âèòÿãàííÿ lateral ~ âèðîùóâàííÿ ìîíîêðèñòàë³â ìåòîäîì âèòÿãàííÿ ïî ãîðèçîíòàë³ vertical ~ âèðîùóâàííÿ ìîíîêðèñòàë³â ìåòîäîì âèòÿãàííÿ ó âåðòèêàëüíîìó íàïðÿì³; âèðîùóâàííÿ êðèñòàë³â ìåòîäîì ×îõðàëüñüêîãî pull-up: load ~ ðåçèñòîð íàâàíòàæåííÿ pulse ³ìïóëüñ | ãåíåðóâàòè ³ìïóëüñè; ïðàöþâàòè â ³ìïóëüñíîìó ðåæèì³ clock ~ ñèíõðîí³ÇÏþ÷èé ³ìïóëüñ, ñèíõðî³ìïóëüñ; òàêòîâèé ³ìïóëüñ filling ~ çàïîâíþþ÷èé ³ìïóëüñ gating ~ ñòðîáóþ÷èé ³ìïóëüñ, ñòðîá-³ìïóëüñ refilling ~ çàïîâíþþ÷èé ³ìïóëüñ pump: aspirator ~ íàñîñ àñï³ðàòîðíîãî òèïó backing ~ ôîðâàêóóìíèé íàñîñ charge ~ ï³äêà÷êà [íàêà÷óâàííÿ] çàðÿä³â desoldering ~ â³äñìîêòóâàííÿ äëÿ ïðèïîþ (ïðè äåìîíòàæ³ êîìïîíåíò³â) diffusion ~ äèôóç³éíèé íàñîñ ion-getter ~ ãåòåðíî-³îííèé íàñîñ liquid-nitrogen-trapped diffusion ~ äèôóç³éíèé íàñîñ ç àçîòíîþ ïàñòêîþ Roots ~ âàêóóìíèé íàñîñ Ðóòñà sublimation ~ íàñîñ ñóáë³ìàö³¿ turbomolecular ~ òóðáîìîëåêóëÿðíèé âàêóóìíèé íàñîñ vacuum ~ âàêóóìíèé íàñîñ pumpdown â³äêà÷óâàííÿ (íàïð. ãàç³â ç îá’ºìó) pumping: oil-free ~ áåçìàñëÿíà â³äêà÷óâàííÿ punch 1. âèð³çàòè, âèðóáóâàòè (íàïð. êðèñòàëè ³ç ñòð³÷êîâîãî íîñ³ÿ); øòàìïóâàòè 2. ïåðôîðóâàòè, ïðîáèâàòè îòâîðè punch-through ïðîêîë áàçè, ñòóëåííÿ puncture ïðîá³é, ïðîêîë (íàïð. îêñèäíîãî øàðó) \ ïðîêîëþâàòè (íàïð. îêñèäíèé øàð) pure: analytically ~ ÷èñòèé äëÿ àíàë³çó
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rad chemically ~ õ³ì³÷íî ÷èñòèé purging 1. î÷èùåííÿ 2. â³äáðàêóâàííÿ; âèáðàêîâóâàííÿ purification î÷èùåííÿ water ~ î÷èùåííÿ âîäè zone ~ çîííå î÷èùåííÿ purifier 1. óñòàíîâêà äëÿ î÷èùåííÿ 2. ðåàêòèâ äëÿ î÷èùåííÿ nitrogen ~ óñòàíîâêà äëÿ î÷èùåííÿ àçîòó purity ÷èñòîòà; áåçäîì³øêîâ³ñòü pushout: base ~ âèò³ñíåííÿ áàçè (â îáëàñòü êîëåêòîðà) pyramid: growth ~ ï³ðàì³äà çðîñòàííÿ (ïîâåðõíåâèé äåôåêò íàï³âïðîâ³äíèêà) silicon ~ åï³òàêñ³àëüíèé ãîðá êðåìí³þ ó âèãëÿä³ ï³ðàì³äè pyroceram ñèòàë pyroglass ï³ðîãëàñ (òèï ôîñôîðîñèë³êàòíîãî ñêëà, ùî ì³ñòèòü 10% ôîñôîðó) pyrok ï³ðîêñ (òèï ôîñôîðîñèë³êàòíîãî ñêëà, ùî ì³ñòèòü4,5% ôîñôîðó) pyrolysis ï³ðîë³ç precursor ~ ï³ðîë³ç âèõ³äíî¿ ðå÷îâèíè spray ~ ï³ðîë³ç ðå÷îâèíè, ùî ðîçïèëþºòüñÿ pyrolyzation ïðîâåäåííÿ ïðîöåñó ï³ðîëèçó
Q quad-in-line ïëîñêèé êîðïóñ ç ÷îòèðèðÿäíèì ðîçòàøóâàííÿì âèâîä³â qualification 1. pl õàðàêòåðèñòèêè 2. êâàë³ô³êàö³éíå âèïðîáóâàííÿ burn-in ~ êâàë³ô³êàö³éíå âèïðîáóâàííÿ ï³ä íàâàíòàæåííÿì conditional ~ îáìåæåíå êâàë³ô³êàö³éíå âèïðîáóâàííÿ full ~ ïîâíå êâàë³ô³êàö³éíå âèïðîáóâàííÿ LSI ~s õàðàêòåðèñòèêè Â²Ñ substrate ~s 1. õàðàêòåðèñòèêè ï³äêëàäîê 2. êâàë³ô³êàö³éí³ âèïðîáóâàííÿ ï³äêëàäîê quantity: sample ~ äîñë³äíà ïàðò³ÿ quantization êâàíòóâàííÿ quantum: energy ~ êâàíò åíåð㳿 lattice vibration ~ ôîíîí light ~ ôîòîí quartz êâàðö; ä³îêñèä êðåìí³þ, SiO2 E-beam ~ øàð ä³îêñèäó êðåìí³þ,
ñôîðìîâàíèé åëåêòðîííî-ïðîìåíåâîþ îáðîáêîþ fused ~ ïëàâëåíèé êâàðö ST-cut ~ êâàðö ST-çð³çó quasi-intrinsic êâàç³âëàñíèé (ïðî åëåêòðîïðîâ³äí³ñòü) quenching 1. ãàñ³ííÿ, ãàñ³ííÿ 2. ãàðòóâàííÿ discharge ~ ãàñ³ííÿ ðîçðÿäó domain ~ ïðèäóøåííÿ äîìåí³â exciton ~ ãàñ³ííÿ åêñèòîí³â quickchip áàçîâèé ìàòðè÷íèé êðèñòàë, ÁÌÊ (ô³ðìîâà íàçâà ñå𳿠ë³í³éíèõ ÁÌÊ ô³ðìè Tektronix) quick-hardening øâèäêîòâåðäíó÷èé quick-responce øâèäêîä³éíèé quick-setting øâèäêîòâåðäíó÷èé QUIP-compatible ñóì³ñíèé ç êîðïóñîì ç ÷îòèðèðÿäíèì ðîçòàøóâàííÿì øòèðüêîâèõ âèâîä³â
R race çìàãàííÿ, ãîíêè (ñèãíàë³â â ëîã³÷í³é ²Ñ) critical ~ êðèòè÷íå çìàãàííÿ (ñèãíàë³â, ÿêå ìîæå ïðèâåñòè äî çáîþ) noncritical ~ íåêðèòè÷íå çìàãàííÿ rack 1. ñò³éêà; ñòåëàæ; ñòåíä 2. øàñ³ (áàçîâà íåñó÷à êîíñòðóêö³ÿ) aging ~ ñòåíä äëÿ âèïðîáóâàííÿ íà ñòàð³ííÿ mounting ~ 1. ìîíòàæíà ñò³éêà 2. øàñ³ silicon ~ êðåìí³ºâà (áàçîâà) íåñó÷à êîíñòðóêö³ÿ test ~ âèïðîáóâàëüíèé ñòåíä rack-mounted çìîíòîâàíèé â ñò³éö³ radiation âèïðîì³íþâàííÿ; ðàä³àö³ÿ (äèâ. òæ ray) alpha (particle) ~ àëüôà-âèïðîì³íþâàííÿ beta ~ áåòà-âèïðîì³íþâàííÿ exposing ~ åêñïîíóþ÷å âèïðîì³íþâàííÿ far-ultraviolet ~ äàëüíº óëüòðàô³îëåòîâå âèïðîì³íþâàííÿ gamma ~ ãàììà-âèïðîì³íþâàííÿ imaging ~ âèïðîì³íþâàííÿ äëÿ åêñïîíóâàííÿ ðåçèñòà infrared ~ ³íôðà÷åðâîíå [²×-] âèïðîì³íþâàííÿ ionizing ~ ³îí³çóþ÷à ðàä³àö³ÿ laser ~ ëàçåðíå âèïðîì³íþâàííÿ proton ~ ïðîòîííå âèïðîì³íþâàííÿ
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rat recombination ~ ðåêîìá³íàö³éíå clock(ing)~ òàêòîâà ÷àñòîòà; ÷àñòîòà âèïðîì³íþâàííÿ ñèíõðîí³çàö³¿ roentgen ~ ðåíòãåí³âñüêå âèïðîì³íþâàííÿ diffusion (ðånetration) ~ øâèäê³ñòü äèôó糿 synchrotron ~ ñèíõðîòðîííå effective test ~ åôåêòèâíà øâèäê³ñòü âèïðîì³íþâàííÿ òåñòóâàííÿ (â³äíîøåííÿ äîâæèíè òåñòó äî X ~ ðåíòãåí³âñüêå âèïðîì³íþâàííÿ ïîâíîãî ÷àñó òåñòóâàííÿ ²Ñ) radiation-hard (end), radiation-insensitive, etch ~ øâèäê³ñòü òðàâëåííÿ radiation-proof, radiation-resistant, failure ~ ³íòåíñèâí³ñòü â³äìîâ radiation-tolerant ðàä³àö³éíî-ñò³éêèé fallback data ~ çíèæåíà øâèäê³ñòü ïåðåäà÷³ radiator òåïëîâ³äâ³ä; ðàä³àòîð (òåïëîâ³äâ³äà) äàíèõ finned ~ ðåáðèñòèé òåïëîâ³äâ³ä functional throughput ~ ôóíêö³îíàëüíà radiography 1. ðàä³îãðàô³ÿ 2. ðåíòãåíîãðàô³ÿ; ïðîäóêòèâí³ñòü (äîáóòîê ê³ëüêîñò³ ëîã³÷íèõ ðåíòãåí³âñüêà äåôåêòîñêîï³ÿ åëåìåíò³â íà êðèñòàë³ ÍÂ²Ñ íà òàêòîâó gamma(-ray)~ ãàììàãðàô³ÿ ÷àñòîòó) X-~ ðåíòãåíîãðàô³ÿ pattern ~ øâèäê³ñòü ïîäà÷³ òåñòîâèõ rail: íàáîð³â power ~ øèíà æèâëåííÿ pattern writing ~ øâèäê³ñòü ôîðìóâàííÿ ramping: ìàëþíêà (çà äîïîìîãîþ åëåêòðîííîãî temperature ~ (ïëàâíèé) âèâ³ä óñòàòêóâàííÿ ïðîìåíÿ) íà çàäàíèé òåìïåðàòóðíèé ðåæèì placement ~ ïðîäóêòèâí³ñòü ìîíòàæó (íàïð. unloading ~ (ïëàâíèé) âèâ³ä óñòàòêóâàííÿ ²Ñ) íà ðåæèì âèâàíòàæåííÿ recombination ~ øâèäê³ñòü ðåêîìá³íàö³¿ ramp-up (ïëàâíèé) âèâ³ä óñòàòêóâàííÿ íà redundancy ~ ñòóï³íü ðåçåðâóâàííÿ ðîáî÷èé ðåæèì regeneration ~ øâèäê³ñòü ðåãåíåðàö³¿ randomization äîâ³ëüíèé ðîçïîä³ë (íàïð. rework ~ ê³ëüê³ñòü ïîâòîðíî îáðîáëþâàíèõ íàï³âïðîâ³äíèêîâèõ ïëàñòèí â ïàðò³¿) âèðîá³â (íàïð. ïëàñòèí) range 1. ä³àïàçîí; ìåæ³ (âèì³ðþâàíü) 2. slew ~ øâèäê³ñòü íàðîñòàííÿ âèõ³äíî¿ äîâæèíà â³ëüíîãî ïðîá³ãó, ïðîá³ã 3. íàïðóãè (â îïåðàö³éíîìó ï³äñèëþâà÷³) íîìåíêëàòóðà rating íîì³íàëüíå çíà÷åííÿ (ïàðàìåòðà) ~ electrons äîâæèíà ïðîá³ãó åëåêòðîí³â base collector breakdown ~ íîì³íàëüíà band-pass ~ ñìóãà ïðîïóñêàííÿ íàïðóãà ïðîáîþ ïåðåõîäó áàçà–êîëåêòîð complexity ~ ñòóï³íü ñêëàäíîñò³; ñòóï³íü current ~ íîì³íàëüíèé ñòðóì ³íòåãðàö³¿ load ~ íîì³íàëüíå íàâàíòàæåííÿ intrinsic temperature ~ òåìïåðàòóðíà power ~ íîì³íàëüíà ïîòóæí³ñòü îáëàñòü âëàñíî¿ åëåêòðîïðîâ³äíîñò³ transistor ~s íîì³íàëüí³ ïàðàìåòðè microprocessor ~ êîìïëåêò [íàá³ð] òðàíçèñòîðà ì³êðîïðîöåñîð³â, ì³êðîïðîöåñîðíèé voltage ~ íîì³íàëüíà íàïðóãà êîìïëåêò ratio 1. â³äíîøåííÿ; ñï³ââ³äíîøåííÿ 2. operating-temperature ~ ä³àïàçîí ðîáî÷èõ êîåô³ö³ºíò òåìïåðàòóð aspect ~ ôîðìàò çîáðàæåííÿ; â³äíîøåííÿ parts ~ íîìåíêëàòóðà êîìïîíåíò³â øèðèíè äî äîâæèíè power ~ ä³àïàçîí ïîòóæíîñò³ beam pressure ~ â³äíîøåííÿ òèñêó â ïó÷êàõ voltage ~ ä³àïàçîí íàïðóã (â ìîëåêóëÿðí³é åï³òàêñ³¿) rapid øâèäêîä³éíèé common-base forward-current transfer ~ raster ðàñòð êîåô³ö³ºíò ïåðåäà÷³ åì³òåðíîãî ñòðóìó scanning ~ ðàñòð ñêàíóâàííÿ òðàíçèñòîðà â ñõåì³ ³ç çàãàëüíîþ áàçîþ rate 1. øâèäê³ñòü 2. ³íòåíñèâí³ñòü (â³äìîâ) common-emitter forward-current transfer bit ~ øâèäê³ñòü ïåðåäà÷³ á³ò³â; øâèäê³ñòü ~ êîåô³ö³ºíò ï³äñèëåííÿ òðàíçèñòîðà ïî ïåðåäà÷³ äàíèõ â á³òàõ ñòðóìó â ñõåì³ ³ç çàãàëüíèì åì³òåðîì capture ~ øâèäê³ñòü çàõîïëåííÿ
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rea common-mode rejection ~ êîåô³ö³ºíò ïîñëàáëåííÿ ñèíôàçíîãî ñèãíàëó concentration ~ â³äíîøåííÿ êîíöåíòðàö³é äîì³øîê cost-ðårformance ~ ñï³ââ³äíîøåííÿ âàðò³ñòü/åôåêòèâí³ñòü coupling ~ êîåô³ö³ºíò çâ’ÿçêó doping ~ â³äíîøåííÿ êîíöåíòðàö³é äîì³øîê etch (ing) ~ â³äíîøåííÿ øâèäêîñòåé òðàâëåííÿ expansion ~ òåìïåðàòóðíèé êîåô³ö³ºíò ðîçøèðåííÿ, ÒÊÐ injection ~ êîåô³ö³ºíò ³íæåêö³¿ mixture ~ ñï³ââ³äíîøåííÿ êîìïîíåíò³â â ñóì³ø³ multiplication ~ êîåô³ö³ºíò ëàâèííîãî ìíîæåííÿ on-off current ~ â³äíîøåííÿ ñòðóì³â âêëþ÷åííÿ ³ âèêëþ÷åííÿ ripple ~ êîåô³ö³ºíò ïóëüñàö³é scaling ~ ìàñøòàáíèé êîåô³ö³ºíò, êîåô³ö³ºíò ìàñøòàáóâàííÿ shrinkage ~ 1. êîåô³ö³ºíò óñàäêè 2. ìàñøòàáíèé êîåô³ö³ºíò, êîåô³ö³ºíò ìàñøòàáóâàííÿ signal-to-noise ~ â³äíîøåííÿ ñèãíàë–øóì speed/power ~ ñï³ââ³äíîøåííÿ ì³æ øâèäêî䳺þ ²Ñ ³ ïîòóæí³ñòþ ðîçñ³ÿííÿ stoichiometric ~ ñòåõ³îìåòðè÷íå ñï³ââ³äíîøåííÿ TMG/TEG ~ â³äíîøåííÿ êîíöåíòðàö³é òðèìåòèëãàë³þ äî òðèåòèëãàë³þ, â³äíîøåííÿ TMG äî TEG width-to-length [W/L] ~ â³äíîøåííÿ øèðèíè äî äîâæèíè (íàïð. êàíàëó ÌÎÍòðàíçèñòîðà) raw íåî÷èùåíèé; íåîáðîáëåíèé ray ïðîì³íü; ïó÷îê; pl âèïðîì³íþâàííÿ | âèïðîì³íþâàòè(ñÿ); îïðîì³íþâàòè (äèâ. òæ radiation) alpha ~s àëüôà-ïðîìåí³; àëüôàâèïðîì³íþâàííÿ beta ~s áåòà-ïðîìåí³; áåòà-âèïðîì³íþâàííÿ deep UV ~s äàëüíº óëüòðàô³îëåòîâå âèïðîì³íþâàííÿ gamma ~s ãàììà-ïðîìåí³; ãàììàâèïðîì³íþâàííÿ infrared ~s ³íôðà÷åðâîíå [²×-]ïðîì³ííÿ; ³íôðà÷åðâîíå [²×-]âèïðîì³íþâàííÿ laser ~ ëàçåðíèé ïðîì³íü
molecular ~s ìîëåêóëÿðí³ ïó÷êè ultraviolet ~s óëüòðàô³îëåòîâå [ÓÔ]ïðîì³ííÿ; óëüòðàô³îëåòîâå [ÓÔ-] âèïðîì³íþâàííÿ X ~s ðåíòãåí³âñüêå ïðîì³ííÿ; ðåíòãåí³âñüêå âèïðîì³íþâàííÿ reach-through íàñêð³çíèé îòâ³ð; íàñêð³çíà îáëàñòü collector ~ íàñêð³çíà îáëàñòü êîëåêòîðà emitter ~ åì³òåðíà íàñêð³çíà îáëàñòü p-type ~ íàñêð³çíà îáëàñòü (ç åëåêòðîïðîâ³äí³ñòþ) ð-òèïó reactance ðåàêòèâíèé îï³ð capacitance ~ îï³ð ºìíîñò³ inductive ~ ³íäóêòèâíèé îï³ð reactant ðåàãåíò incident ~s àòîìè àáî ìîëåêóëè ãàçó, ùî ðåàãóþòü ì³æ ñîáîþ (íàïð. ïðè îñàäæåíí³ ç ïàðîâî¿ ôàçè) reaction ðåàêö³ÿ; âçàºìîä³ÿ decomposition ~ ðåàêö³ÿ ðîçêëàäàííÿ enhancement-type ~ ñòèìóëþþ÷à ðåàêö³ÿ gaseous-phase ~ ðåàêö³ÿ â ãàçîâ³é ôàç³ heterogenous ~ ãåòåðîãåííà ðåàêö³ÿ ion-induced surface ~ ³îííî-ñòèìóëüîâàíà ðåàêö³ÿ íà ïîâåðõí³ (ãåòåðîãåííà ðåàêö³ÿ) liquid-phase [liquefaction] ~ ðåàêö³ÿ â ð³äê³é ôàç³ oxidation ~ ðåàêö³ÿ îêèñëåííÿ photochemical ~ ôîòîõ³ì³÷íà ðåàêö³ÿ photodissociation ~ ðåàêö³ÿ ôîòîäèñîö³àö³¿ photo-induced surface ~ ôîòîñòèìóëüîâàíà ðåàêö³ÿ íà ïîâåðõí³ plasma ~ ïëàçìîâà ðåàêö³ÿ, ðåàêö³ÿ â ïëàçì³ precursor ~ ðåàêö³ÿ âèõ³äíî¿ ðå÷îâèíè pyrolytic CVD ~ ï³ðîë³òè÷íà ðåàêö³ÿ ïðè îñàäæåíí³ ç ïàðîâî¿ ôàçè radical ~ ðåàêö³ÿ ç ó÷àñòþ â³ëüíèõ ðàäèêàë³â redox ~ ðåàêö³ÿ îêèñëåííÿ-â³äíîâëåííÿ reduction ~ ðåàêö³ÿ â³äíîâëåííÿ solid-state ~ ðåàêö³ÿ â òâåðä³é ôàç³ substitution ~ ðåàêö³ÿ çàì³ùåííÿ transport ~ (ãàçî)òðàíñïîðòíà ðåàêö³ÿ vapor(-phase)~ ðåàêö³ÿ â ïàðîâ³é ôàç³ wet ~ ðåàêö³ÿ â ð³äêîìó ñåðåäîâèù³ reactive 1. õ³ì³÷íî àêòèâíèé, ðåàêö³éíîñïðîìîæíèé 2. ðåàêòèâíèé (ïðî îï³ð) reactor 1. (õ³ì³÷íèé) ðåàêòîð 2. êîòóøêà ³íäóêòèâíîñò³; êîíäåíñàòîð
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rec barrel-type ~ öèë³íäðîâèé [áàðàáàííèé] ðåàêòîð (äëÿ ïëàçìîâîãî òðàâëåííÿ) batch-l o a d e d ´ ~ ðåàêòîð äëÿ ãðóïîâî¿ îáðîáêè (íàï³âïðîâ³äíèêîâèõ ïëàñòèí) chemical vapor deposition ~ ðåàêòîð äëÿ õ³ì³÷íîãî îñàäæåííÿ ïë³âîê ç ïàðîâî¿ ôàçè cylindrical plasma (etching) ~ öèë³íäðîâèé [áàðàáàííèé] ïëàçìîâèé ðåàêòîð EPI [epitaxial] ~ åï³òàêñ³àëüíèé ðåàêòîð etching ~ ðåàêòîð òðàâëåííÿ high-pressure ~ ðåàêòîð âèñîêîãî òèñêó hot-well ~ ðåàêòîð ç ãàðÿ÷èìè ñò³íêàìè laboratory-scale ~ ëàáîðàòîðíèé ðåàêòîð LPCVD ~ ðåàêòîð äëÿ õ³ì³÷íîãî îñàäæåííÿ ç ïàðîâî¿ ôàçè ïðè íèçüêîìó òèñêó LPE ~ ðåàêòîð äëÿ åï³òàêñ³¿ ç ð³äêî¿ ôàçè MO-CVD ~ ðåàêòîð äëÿ õ³ì³÷íîãî îñàäæåííÿ ç ïàðîâî¿ ôàçè ìåòàëîîðãàí³÷íî¿ ñïîëóêè MOVPE ~ ðåàêòîð äëÿ åï³òàêñ³àëüíîãî âèðîùóâàííÿ ç ïàðîâî¿, ôàçè ìåòàëîîðãàí³÷íî¿ ñïîëóêè multifacet ~ ðåàêòîð ç áàãàòîãðàííèì áàðàáàíîì multiwafer plasma ~ ïëàçìîâèé ðåàêòîð äëÿ ãðóïîâî¿ îáðîáêè íàï³âïðîâ³äíèêîâèõ ïëàñòèí nitride-îõide [NITROX] ~ ðåàêòîð äëÿ ôîðìóâàííÿ í³òðèäíèõ ³ îêñèäíèõ ïë³âîê oxide ~ ðåàêòîð äëÿ îêñèäóâàííÿ “pancake” ~ ïëàíàðíèé ðåàêòîð äëÿ ïëàçìîâîãî òðàâëåííÿ parallel-plate ~ ðåàêòîð ç ïàðàëåëüíèìè (åëåêòðîäíèìè) ïëàñòèíàìè (äëÿ ïëàçìîâîãî òðàâëåííÿ), ä³îäíèé ðåàêòîð planar plasma (etching) ~ ïëàíàðíèé ðåàêòîð äëÿ ïëàçìîâîãî òðàâëåííÿ plasma (etching) ~ ïëàçìîâèé ðåàêòîð òðàâëåííÿ, ðåàêòîð äëÿ ïëàçìîâîãî òðàâëåííÿ radial-flow plasma etching ~ ïëàçìîâèé ðåàêòîð òðàâëåííÿ ç ðàä³àëüíèì ïîòîêîì ðåàêòèâíèõ ãàç³â sputter(ing)~ óñòàíîâêà äëÿ ðîçïèëþâàííÿ reagent ðåàãåíò; ðåàêòèâ real-estate êîðèñíà ïëîùà (êðèñòàëà) receptacle ïàíåëüêà, ñóïóòíèê-íîñ³é (äëÿ ²Ñ) DIL [DIP, dual in-line (ðàñkage)] ~ ïàíåëüêà äëÿ ²Ñ â ïëîñêîìó êîðïóñ³ ç äâîðÿäíèì ðîçòàøóâàííÿì âèâîä³â
lead ~ ãí³çäî äëÿ âèâîäó (êîðïóñè) package ~ ïàíåëüêà äëÿ ²Ñ â êîðïóñ³ receptor ïðèéìà÷ recess êàíàâêà; ïîãëèáëåííÿ mesa ~ ìåçà-êàíàâêà recirculator óñòàíîâêà äëÿ ðåöèðêóëÿö³¿, ðåöèðêóëÿòîð water ~ óñòàíîâêà äëÿ ðåöèðêóëÿö³¿ âîäè, ðåöèðêóëÿòîð âîäè reclamation ðåãåíåðàö³ÿ solvent ~ ðåãåíåðàö³ÿ ðîç÷èííèêà recognition ðîçï³çíàâàííÿ character ~ ðîçï³çíàâàííÿ çíàê³â ink dot ~ ðîçï³çíàâàííÿ (íàïð. äåôåêò³â êðèñòàë³â) ïî òî÷ö³ ôàðáíèêà pattern ~ ðîçï³çíàâàííÿ îáðàç³â recombination ðåêîìá³íàö³ÿ Auger ~ ðåêîìá³íàö³ÿ Îæå band-edge [band-to-band] ~ ì³æçîííà ðåêîìá³íàö³ÿ bulk ~ îá’ºìíà ðåêîìá³íàö³ÿ carrier ~ ðåêîìá³íàö³ÿ íîñ³¿â direct ~ ì³æçîííà ðåêîìá³íàö³ÿ donor-àñceptor ~ äîíîðíî-àêöåïòîðíà ðåêîìá³íàö³ÿ edge ~ ì³æçîííà ðåêîìá³íàö³ÿ hole-electron ~ åëåêòðîííî-ä³ðêîâà ðåêîìá³íàö³ÿ nonradiative ~ áåçâèïðîì³íþâàëüíà ðåêîìá³íàö³ÿ radiative ~ âèïðîì³íþâàëüíà ðåêîìá³íàö³ÿ surface ~ ïîâåðõíåâà ðåêîìá³íàö³ÿ trap(ping)~ ïàñòêîâà ðåêîìá³íàö³ÿ volume ~ îá’ºìíà ðåêîìá³íàö³ÿ reconditioning â³äíîâëåííÿ; âèïðàâëåííÿ; ðåìîíò reconversion: monocrystalline ~ ðåêðèñòàë³çàö³ÿ ç óòâîðåííÿì ìîíîêðèñòàëà recovery 1. â³äíîâëåííÿ; ïîâåðíåííÿ 2. ðåãåíåðàö³ÿ, â³äíîâëåííÿ failure ~ â³äíîâëåííÿ ï³ñëÿ çáîþ solvent ~ ðåãåíåðàö³ÿ ðîç÷èííèêà recrystallization ðåêðèñòàë³çàö³ÿ EB ~ åëåêòðîííî-ïðîìåíåâà ðåêðèñòàë³çàö³ÿ explosive ~ âèáóõîâà ðåêðèñòàë³çàö³ÿ ion-beam ~ ðåêðèñòàë³çàö³ÿ ³îííèì ïó÷êîì lamp ~ ëàìïîâà ðåêðèñòàë³çàö³ÿ (ïîë³êðåìí³þ)
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reg laser ~ ëàçåðíà ðåêðèñòàë³çàö³ÿ laser-induced ~ ðåêðèñòàë³çàö³ÿ ï³ä 䳺þ ëàçåðíîãî âèïðîì³íþâàííÿ seeded ~ ðåêðèñòàë³çàö³ÿ ç âèêîðèñòàííÿì (ìîíîêðèñòàë³÷íî¿) ïðèìàíêè seedless ~ ðåêðèñòàë³çàö³ÿ áåç âèêîðèñòîâóâàííÿ (ìîíîêðèñòàë³÷íî¿) ïðèìàíêè solid-phase ~ òâåðäîôàçíà ðåêðèñòàë³çàö³ÿ strip-heater (scanning) ~ ðåêðèñòàë³çàö³ÿ ñìóæêîâèì íàãð³âà÷åì (ùî ïîñë³äîâíî ïåðåì³ùàºòüñÿ) zone-melting ~ ðåêðèñòàë³çàö³ÿ ìåòîäîì çîííî¿ ïëàâêè rectification 1. âèïðÿìëåííÿ 2. äåòåêòóâàííÿ barrier-layer [depletion-layer] ~ âèïðÿìëåííÿ íà çá³äíåíîìó øàð³ diode ~ ä³îäíå äåòåêòóâàííÿ p-n junction ~ âèïðÿìëåííÿ íà ð–n-ïåðåõîä³ rectifier 1. âèïðÿìëÿ÷ 2. ä³îä bridge ~ ìîñòîâèé âèïðÿìëÿ÷ controlled ~ êåðîâàíèé âèïðÿìëÿ÷ tunnel ~ âèïðÿìëÿ÷ íà òóíåëüíîìó ä³îä³ recuperation ðåãåíåðàö³ÿ, â³äíîâëåííÿ redeposttion ïåðåîñàäæåííÿ redesign ïîâòîðíå ïðîåêòóâàííÿ, ïåðåïðîåêòóâàííÿ reduce 1. â³äíîâëþâàòè (ïðî õ³ì³÷íó ðåàêö³þ) 2. çìåíøóâàòè [ðåäóêóâàòè] çîáðàæåííÿ (îïòè÷íèìè ìåòîäàìè) reducer (õ³ì³÷íèé) â³äíîâíèê reduction 1. â³äíîâëåííÿ (õ³ì³÷íà ðåàêö³ÿ) 2. (îïòè÷íå) çìåíøåííÿ [ðåäóêóâàííÿ] çîáðàæåííÿ barrier-height ~ çìåíøåííÿ âèñîòè (ïîòåíö³éíîãî) áàð’ºðó gap ~ çâóæåííÿ çàáîðîíåíî¿ (åíåðãåòè÷íî¿) çîíè hydrogen ~ â³äíîâëåííÿ âîäíåì local ~ 1. ëîêàëüíå â³äíîâëåííÿ 2. ëîêàëüíå çìåíøåííÿ (íàïð. êîíöåíòðàö³¿ äîì³øêè) one-step ~ îäíîñòóï³í÷àòå çìåíøåííÿ çîáðàæåííÿ photolytic ~ ôîòîë³òè÷íå â³äíîâëåííÿ (íàïð. ëàçåðíèì îïðîì³íþâàííÿì) power ~ çíèæåííÿ ñïîæèâàíî¿ ïîòóæíîñò³ yield ~ çíèæåííÿ â³äñîòêà âèõîäó ãîäíèõ redundancy 1. íàäì³ðí³ñòü, íàäëèøêîâ³ñòü 2. ðåçåðâóâàííÿ active ~ ðåçåðâóâàííÿ çàì³ùåííÿì
element ~ ïîåëåìåíòíå ðåçåðâóâàííÿ on-cnip ~ ðåçåðâóâàííÿ íà êðèñòàë³ reference 1. äæåðåëî îïîðíî¿ íàïðóãè 2. åòàëîí 3. åòàëîííèé; çðàçêîâèé 4. îïîðíèé 5. âèõ³äíèé integrated-circuit (voltage) ~ ²Ñ äæåðåëà îïîðíî¿ íàïðóãè, ³íòåãðàëüíå äæåðåëî îïîðíî¿ íàïðóãè temperature-compensated (voltage) ~ äæåðåëî îïîðíî¿ íàïðóãè ç òåìïåðàòóðíîþ êîìïåíñàö³ºþ voltage ~ äæåðåëî îïîðíî¿ íàïðóãè refill: epitaxial ~ çàïîâíåííÿ (êàíàâîê) åï³òàêñ³àëüíèì ìàòåð³àëîì refinement 1. î÷èùåííÿ 2. óäîñêîíàëåííÿ process ~ óäîñêîíàëåííÿ òåõíîëîã³÷íîãî ïðîöåñó stepwise ~ ïîåòàïíå óäîñêîíàëåííÿ (íàïð. êîíñòðóêö³¿ ïðè ïðîåêòóâàíí³ ²Ñ) refiner óñòàíîâêà äëÿ î÷èùåííÿ refining î÷èùåííÿ float (ing) zone ~ çîííå î÷èùåííÿ ç ïëàâàþ÷îþ çîíîþ reflection â³äáèâàííÿ Bragg ~ áðåã³âñüêå â³äáèâàííÿ diffused ~ äèôóçíå â³äáèâàííÿ reflectivity êîåô³ö³ºíò â³äáèâàííÿ; â³äáèâíà çäàòí³ñòü reflow: glass ~ ðîçïëàâëåííÿ øàðó ôîñôîðîñèë³êàòíîãî ñêëà infrared ~ îïëàâëåííÿ (ïðèïîþ) ²×âèïðîì³íþâàííÿì solder ~ îïëàâëåííÿ ïðèïîþ vapor-phase solder ~ îïëàâëåííÿ ïðèïîþ ñòðóìåíåì ãàðÿ÷î¿ ïàðè reflow-solder ïàÿííÿ îïëàâëåííÿì ïðèïîþ | ïàÿòè ðîçïëàâëåííÿì ïðèïîþ reforming ôîðìóâàííÿ (âèâîä³â) refreshing ðåãåíåðàö³ÿ, â³äíîâëåííÿ regeneration 1. ðåãåíåðàö³ÿ, â³äíîâëåííÿ 2. ïîçèòèâíèé çâîðîòíèé çâ’ÿçîê 3. ïåðåçàïèñ etchant ~ ðåãåíåðàö³ÿ òðàâíèêà regime ðåæèì (ðîáîòè) steady-state ~ ñòàòè÷íèé ðåæèì transient ~ ïåðåõ³äíèé ðåæèì region îáëàñòü; çîíà; ä³ëÿíêà (äèâ. ò-æ area, zone)
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reg absorption ~ îáëàñòü ïîãëèíàííÿ (íàïð. íîñ³¿â çàðÿäó) active TEG GaInAs ~ àêòèâíà îáëàñòü GaInAs ç äâîâèì³ðíèì åëåêòðîííèì ãàçîì alloyed ~ ñïëàâíà îáëàñòü avalanche ~ îáëàñòü ëàâèííîãî ìíîæåííÿ barrier ~ çá³äíåíà îáëàñòü border ~ êðàéîâà îáëàñòü; ãðàíè÷íà îáëàñòü boundary ~ ãðàíè÷íà îáëàñòü breakdown ~ îáëàñòü ïðîáîþ buried ~ ïðèõîâàíà îáëàñòü; ïîãëèáëåíà îáëàñòü channel ~ êàíàëüíà îáëàñòü, êàíàë channel stop (ðår) ~ îáìåæóâà÷ êàíàëó, êàíàëîîáìåæóþ÷à îáëàñòü charge-transfer ~ îáëàñòü ïåðåíåñåííÿ íîñ³¿â çàðÿäó collector ~ îáëàñòü êîëåêòîðà, êîëåêòîð conduction [conductor] ~ ïðîâ³äíà îáëàñòü cutoff ~ îáëàñòü â³äñ³÷åííÿ deep-UV ~ îáëàñòü äàëüíüîãî óëüòðàô³îëåòîâîãî âèïðîì³íþâàííÿ degenerate ~ âèðîäæåíà îáëàñòü depletion (mode) ~ çá³äíåíà îáëàñòü deuterons implanted ~ îáëàñòü, ñôîðìîâàíà ³ìïëàíòàö³ºþ äåéòðîí³â diffusion-isolated ~ îáëàñòü, ñôîðìîâàíà ìåòîäîì ³çîëþþ÷î¿ äèôó糿 drain ~ ñò³÷íà îáëàñòü, îáëàñòü ñòîêó (ïîëüîâîãî òðàíçèñòîðà) drift ~ äðåéôîâà îáëàñòü; ïðîë³òíà îáëàñòü D-well ~ äâîõêèøåíüêîâà îáëàñòü encroaching ~ ä³ëÿíêà ï³äòðàâëåííÿ (ï³ä øàð ä³îêñèäó êðåìí³þ) enhanced ~ çáàãà÷åíà îáëàñòü epitaxial ~ îáëàñòü â åï³òàêñ³àëüíîìó øàð³, åï³òàêñ³àëüíà îáëàñòü exposed ~ 1. åêñïîíîâàíà ä³ëÿíêà 2. ðîçêðèòà [â³äêðèòà] ä³ëÿíêà extrinsic ~ îáëàñòü äîì³øêîâî¿ åëåêòðîïðîâ³äíîñò³ field ~ îáëàñòü ï³ä çàõèñíèì îêñèäíèì øàðîì floating ~ ïëàâàþ÷à îáëàñòü forbidden ~ çàáîðîíåíà (åíåðãåòè÷íà) çîíà gate ~ îáëàñòü çàòâîðà, çàòâîð (ïîëüîâîãî òðàíçèñòîðà) graded ~ îáëàñòü ç íåð³âíîì³ðíèì ðîçïîä³ëîì äîì³øêè heavily-doped ~ ñèëüíîëåãîâàíà îáëàñòü
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high-conductivity ~ íèçüêîîìíà îáëàñòü high-impurity ~ ñèëüíîëåãîâàíà îáëàñòü high-resistivity ~ âèñîêîîìíà îáëàñòü hydrogenated ~ ãèäðîãåí³çîâàíà îáëàñòü impurity ~ äîì³øêîâà îáëàñòü inactive ~ ïàñèâíà îáëàñòü infrared ~ ³íôðà÷åðâîíà [²×-] îáëàñòü injection [injector] ~ ³íæåêö³éíà îáëàñòü, ³íæåêòîð inset ~ âáóäîâàíà îáëàñòü (ñôîðìîâàíà â ³íø³é îáëàñò³) insulation [insulator] ~ (åëåêò-ðî)³çîëÿö³éíà îáëàñòü; ðîçä³ëîâà îáëàñòü interface ~ ãðàíè÷íà îáëàñòü intrinsic ~ îáëàñòü âëàñíî¿ åëåêòðîïðîâ³äíîñò³ ion-implanted ~ ³îííî-³ìïëàíòîâàíà îáëàñòü island ~ îñòð³âåöü isolation ~ (åëåêòðî)³çîëÿö³éíà îáëàñòü; ðîçä³ëîâà îáëàñòü junction ~ îáëàñòü ïåðåõîäó low-impurity ~ ñëàáîëåãîâàíà îáëàñòü low-resistivity ~ íèçüêîîìíà îáëàñòü multiplication ~ îáëàñòü ìíîæåííÿ n ~ îáëàñòü åëåêòðîííî¿ åëåêòðîïðîâ³äíîñò³, îáëàñòü n-òèïó narrow-gap ~ âóçüêà çàáîðîíåíà (åíåðãåòè÷íà) çîíà near-UV ~ îáëàñòü áëèæíüîãî óëüòðàô³îëåòîâîãî âèïðîì³íþâàííÿ n-tab ~ îáëàñòü â êèøåí³ n-òèïó ohmic contact ~ îáëàñòü îì³÷íîãî êîíòàêòó p ~ îáëàñòü ä³ð÷àñòî¿ åëåêòðîïðîâ³äíîñò³, îáëàñòü ð-òèïó peripheral [ðåriphery] ~ êðàéîâà îáëàñòü polysilicon-on-îõide ~ îáëàñòü ïîë³êðèñòàë³÷íîãî êðåìí³þ íà îêñèäíîìó øàð³ proton-damaged ~ îáëàñòü, ïîðóøóâàíà ïðîòîííèì áîìáàðäóâàííÿì proton implanted ~ îáëàñòü, ñôîðìîâàíà ïðîòîííîþ ³ìïëàíòàö³ºþ reach-through ~ êð³çíà îáëàñòü recessed îõide ~ çàãëèáëåíà îêñèäíà îáëàñòü recombination ~ ðåêîìá³íàö³éíà îáëàñòü self-aligned ~s ñàìîñóì³ùåí³ îáëàñò³ shallow ~ ì³ëêà (íàïð. äèôóç³éíà) îáëàñòü shield ~ 1. åêðàíóþ÷à îáëàñòü 2. ìàñêóþ÷à îáëàñòü
reg silicon-sapphire interface ~ îáëàñòü ç code ~ êîäîâèé ðåã³ñòð ïîâåðõíåþ ðîçä³ëó êðåìí³é–ñàïô³ð command ~ ðåã³ñòð êîìàíä softening ~ (òåìïåðàòóðíèé) ä³àïàçîí control ~ óïðàâëÿþ÷èé ðåã³ñòð ðîçì’ÿêøåííÿ (íàïð. ñòåêëà) control status ~ ðåã³ñòð óïðàâë³ííÿ ñòàíì source ~ âèòîêîâà îáëàñòü, îáëàñòü âèòîêó CRC shift ~ çñóâíèé ðåã³ñòð ñèãíàòóðíîãî spreading-resistance ~ îáëàñòü àíàë³ÇÏ (ïðè ïðîåêòóâàíí³, ñïåö³àë³çîâàíèõ ðîçïîä³ëåíîãî îïîðó ²Ñ) stack ~s áàãàòîð³âíåâ³ [áàãàòîÿðóñí³] îáëàñò³ data ~ ðåã³ñòð äàíèõ stepped-doping ~ îáëàñòü ç ñõ³ä÷àñòèì feedback ~ ðåã³ñòð çâîðîòíîãî ïåðåòâîðåííÿ ëåãóâàííÿì feed-forward ~ ðåã³ñòð ïðÿìîãî storage ~ íàêîïè÷óâàëüíà îáëàñòü ïåðåòâîðåííÿ strip-like [strip-shaped] ~ ñìóæêîâà flip-flop ~ ðåã³ñòð íà òðèãåðàõ ä³ëÿíêà interconnected ~s âçàºìîç’ºäíàí³ ðåã³ñòðè Strongly n-type ~ ñèëüíîëåãîâàíà îáëàñòü interrupt ~ ðåã³ñòð ïåðåðèâàíü n-òèïó, îáëàñòü n+-òèïó master-slave ~ ðåã³ñòð ç ãîëîâíèìè ³ subcollector ~ îáëàñòü ï³äêîëåêòîðà; ï³äëåãëèìè òðèãåðàìè ïðèõîâàíèé øàð memory ~ ðåã³ñòð ïàì’ÿò³ subthreshold ~ îáëàñòü ñëàáêî¿ ³íâåðñ³¿, molecular shift ~ ìîëåêóëÿðíèé çñóâíèé ï³äïîðîãîâà îáëàñòü ðåã³ñòð (íà îñíîâ³ ïîë³ìåðó) superlattice ~ îáëàñòü íàäãðàòêè number ~ ðåã³ñòð ÷èñëà tank ~ êèøåíÿ (äëÿ ôîðìóâàííÿ åëåìåíò³â on-chip ~ ðåã³ñòð íà îäíîìó êðèñòàë³ ç ²Ñ) ³íøèìè ñõåìàìè terminating ~ 1. êîíòàêòíà îáëàñòü 2. quadruple-length ~ ðåã³ñòð çá³ëüøåíî¿ êîíòàêòíèé ìàéäàí÷èê ó÷åòâåðî äîâæèíè thermally grown îõide ~ òåðì³÷íî âèðîùåíà readout ~ ðåã³ñòð ïðî÷èòóâàííÿ îêñèäíà ä³ëÿíêà shift ~ çñóâíèé ðåã³ñòð transfer ~ îáëàñòü ïåðåíåñåííÿ íîñ³¿â state variables ~ ðåã³ñòð çì³ííèõ ñòàí³â çàðÿäó word ~ ðåã³ñòð ñëîâà transit-time ~ ïðîë³òíà îáëàñòü registration 1. ðåºñòðàö³ÿ 2. (òî÷íå) ñóì³ùåííÿ ultraviolet ~ îáëàñòü óëüòðàô³îëåòîâîãî à ~ between levels ïîøàðîâå ñóì³ùåííÿ [ÓÔ-]âèïðîì³íþâàííÿ coarse ~ íåòî÷íå ñóì³ùåííÿ V-groove ~ ä³ëÿíêà ç V-ïîä³áíîþ êàíàâêîþ exact ~ òî÷íå ñóì³ùåííÿ weak inversion ~ îáëàñòü ñëàáêî¿ ³íâåðñ³¿, high-resolution ~ ñóì³ùåííÿ ç âèñîêèì ï³äïîðîãîâà îáëàñòü äîçâîëîì well ~ êèøåíÿ (äëÿ ôîðìóâàííÿ åëåìåíò³â lateral ~ ñóì³ùåííÿ â ãîðèçîíòàëüíîìó ²Ñ) íàïðÿì³ wide-gap ~ øèðîêà çàáîðîíåíà level-to-level ~ ïîøàðîâå ñóì³ùåííÿ (åíåðãåòè÷íà) çîíà low-resolution ~ ñóì³ùåííÿ ç íèçüêèì register 1. ðåã³ñòð | ðåºñòðóâàòè 2. (òî÷íå) äîçâîëîì ñóì³ùåííÿ || (òî÷íî) ñóì³ùàòè overlay ~ ñóì³ùåííÿ (òîïîëîã³÷íèõ) øàð³â, accumulator ~ íàêîïè÷óþ÷èé ðåã³ñòð, ïîøàðîâå ñóì³ùåííÿ àêóìóëÿòîð regrowth ðåêðèñòàë³çàö³ÿ address ~ ðåã³ñòð àäðåñè epitaxial solid-phase ~ òâåðäîôàçíà bucket-brigade (device) ~ ðåã³ñòð íà åï³òàêñ³àëüíà ðåêðèñòàë³çàö³ÿ ïðèëàäàõ òèïó «ïîæåæíèé ëàíöþæîê» liquid-phase epitaxial ~ ðåêðèñòàë³çàö³ÿ ïðè ð³äèíí³é åï³òàêñ³¿ charge-coupled (device) ~ ðåã³ñòð íà ÏÇÇ charge-transfer (device) ~ ðåã³ñòð íà ÏÏÇ regularity ðåãóëÿðí³ñòü (ñòðóêòóðè) check ~ êîíòðîëüíèé ðåã³ñòð regulation 1. ñòàá³ë³çàö³ÿ 2. ðåãóëþâàííÿ, circulating (shift) ~ çñóâíèé ðåã³ñòð ç ðåãóëþâàííÿ 3. ïðàâèëî; ³íñòðóêö³ÿ öèðêóëÿö³ºþ ³íôîðìàö³¿ voltage ~ ñòàá³ë³çàö³ÿ íàïðóãè
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req regulator 1. ñòàá³ë³çàòîð 2. ðåãóëÿòîð current ~ ñòàá³ë³çàòîð ñòðóìó electronic voltage ~ åëåêòðîííèé ñòàá³ë³çàòîð íàïðóãè integrated ~ ²Ñ ñòàá³ë³çàòîðà íàïðóãè on-chip ~ ñòàá³ë³çàòîð íà îäíîìó êðèñòàë³ ç ³íøîþ ñõåìîþ reinjector: floating ~ ïëàâàþ÷à îáëàñòü äëÿ ïîâòîðíî¿ ³íæåêö³¿ íîñ³¿â reject áðàê | áðàêóâàòè rejection 1. ïðèäóøåííÿ; îñëàáëåííÿ; ðåæåêö³ÿ 2. â³äáðàêóâàííÿ ~ impurity âèò³ñíåííÿ äîì³øêè common-mode ~ îñëàáëåííÿ ñèíôàçíîãî ñèãíàëó (â îïåðàö³éíîìó ï³äñèëþâà÷³) rejuvenation: etchant ~ ðåãåíåðàö³ÿ òðàâíèêà relation 1. â³äíîøåííÿ; ñï³ââ³äíîøåííÿ 2. çâ’ÿçîê; çàëåæí³ñòü power-delay ~ çàëåæí³ñòü ì³æ ïîòóæí³ñòþ ðîçñ³ÿííÿ ³ çàòðèìêîþ ñèãíàëó scaling ~ ìàñøòàáíå ñï³ââ³äíîøåííÿ relationship 1. â³äíîøåííÿ; ñï³ââ³äíîøåííÿ 2. çâ’ÿçîê; çàëåæí³ñòü capacitance-voltage ~ âîëüò-ôàðàäíà õàðàêòåðèñòèêà current-voltage ~ âîëüò-àìïåðíà õàðàêòåðèñòèêà, ÂÀÕ yield-versus-chip-area ~ çàëåæí³ñòü â³äñîòêà âèõîäó ãîäíèõ â³ä ïëîù³ êðèñòàëà release: passive ~ ïàñèâíå ðîçáëîêóâàííÿ (â øèíàõ òèïó Unibus) trap ~ ñïóñòîøåííÿ ïàñòêè reliability íàä³éí³ñòü operational ~ åêñïëóàòàö³éíà íàä³éí³ñòü relocation: pad ~ ïåðåðîçïîä³ë êîíòàêòíèõ ìàéäàí÷èê³â removal âèäàëåííÿ, çíÿòòÿ (íàïð. ôîòîðåçèñòà) etch ~ ï³äáóðþâàííÿ, âèäàëåííÿ òèì, ùî òðàâëåííÿ heat ~ òåïëîâ³äâ³ä selective ~ âèá³ðêîâå [ñåëåêòèâíå] âèäàëåííÿ (íàïð. îêñèäíîãî øàðó) remover: integrated-circuit ~ ïðèñòð³é äëÿ äåìîíòàæó ²Ñ (íàïð. ç êðèñòàëîíîñ³ÿ)
resist ~ óñòàíîâêà äëÿ âèäàëåííÿ ðåçèñòà reox: poly ~ ô³ðì. ðåîêñèäóâàííÿ ïîë³êðèñòàë³÷íîãî êðåìí³þ repairability ðåìîíòîïðèäàòí³ñòü repeatability â³äòâîðí³ñòü, ïîâòîðþâàí³ñòü process ~ â³äòâîðí³ñòü ïðîöåñó run-to-run ~ â³äòâîðí³ñòü (ïðèëàä³â) â³ä ïàðò³¿ äî ïàðò³¿ wafer-to-wafer ~ â³äòâîðí³ñòü (ñòðóêòóð) â³ä ïëàñòèíè äî ïëàñòèíè repeater ôîòîïîâòîðþâà÷, ôîòîøòàìï; ìóëüòèïë³êàòîð çîáðàæåíü electron-beam image ~ åëåêòðîííîïðîìåíåâèé ìóëüòèïë³êàòîð çîáðàæåíü image [pattern] ~ ôîòîïîâòîðþâà÷, ôîòîøòàìï; ìóëüòèïë³êàòîð çîáðàæåíü replica êîï³ÿ; äóáë³êàò replicability ìóëüòèïë³êîâàí³ñòü; â³äòâîðþâàí³ñòü replication 1. ìóëüòèïë³êàö³ÿ, ìóëüòèïë³êóâàííÿ, ðîçìíîæåííÿ (íàïð. ñòðóêòóð ôîòîøàáëîí³â) 2. ðîçùåïëþâàííÿ, ðîçïîä³ë (ÖÌÄ) block ~ ìóëüòèïë³êàö³ÿ áëîêàìè high-resolution image ~ ìóëüòèïë³êóº çîáðàæåíü ç âèñîêîþ ðîçä³ëüíîþ çäàòí³ñòþ high-speed ~ øâèäê³ñíå ìóëüòèïë³êóº image [pattern] ~ ìóëüòèïë³êàö³ÿ çîáðàæåíü replicator 1. ôîòîïîâòîðþâà÷, ôîòîøòàìï 2. ðîçùåïëþâà÷, ä³ëüíèê (ÖÌÄ) bubble-domain ~ ðîçùåïëþâà÷ [ä³ëüíèê] ÖÌÄ photomask ~ ôîòîïîâòîðþâà÷ ìóëüòèïë³êóâàííÿ ñòðóêòóð ôîòîøàáëîí³â representation ïðåäñòàâëåííÿ; çîáðàæåííÿ; ïîçíà÷åííÿ block ~ áëîê-ñõåìà circuit ~ åêâ³âàëåíòíà ñõåìà process logic ~ ïðåäñòàâëåííÿ ëîã³êè îáðîáêè scaled ~ ìàñøòàáîâàíå ïðåäñòàâëåííÿ schematic ~ ñõåìàòè÷íå çîáðàæåííÿ reproducibility â³äòâîðí³ñòü, ïîâòîðþâàí³ñòü run-to-run ~ â³äòâîðþâàí³ñòü (ïðèëàä³â) â³ä ïàðò³¿ äî ïàðò³¿ [wafer-to-wafer] ~ slice-to-slice â³äòâîðþâàí³ñòü (ñòðóêòóð) â³ä ïëàñòèíè äî ïëàñòèíè requirement âèìîãà
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res alignment ~ âèìîãà äî òî÷íîñò³ ñóì³ùåííÿ circuit ~s âèìîãè ñõåìîòåõí³ê operating ~s åêñïëóàòàö³éí³ âèìîãè performance ~s âèìîãè äî ðîáî÷èõ õàðàêòåðèñòèê technical ~s òåõí³÷í³ âèìîãè reset 1. â³äíîâëåííÿ, ïîâåðíåííÿ (â ïî÷àòêîâèé ñòàí); ñêèäàííÿ | â³äíîâëþâàòè, ïîâåðòàòè (â ïî÷àòêîâèé ñòàí); ñêèäàòè 2. óñòàíîâêà â ñòàí «0» | âñòàíîâëþâàòè â ñòàí «0» memory ~ â³äíîâëåííÿ (ïî÷àòêîâîãî ñòàíó) ïàì’ÿò³ power-on ~ ñêèäàííÿ ï³ñëÿ âêëþ÷åííÿ æèâëåííÿ resin ñìîëà anion(-åxchange)~ àí³îíîîáì³ííà ñìîëà casting ~ ñìîëà äëÿ ãåðìåòèçàö³¿ cation(-åxchange)~ êàò³îíîîáì³ííà ñìîëà cured ~ îòâåðæäåííàÿ ñìîëà epoxy ~ åïîêñèäíà ñìîëà hardened ~ çàòâåðä³ëà ñìîëà ion(-exchange)~ ³îíîîáì³ííà ñìîëà phenolic ~ ôåíîëîâà ñìîëà photoresistive ~ ôîòî÷óòëèâà [ñâ³òëî÷óòëèâà] ñìîëà; îðãàí³÷íèé ôîòîðåçèñò polyamid ~ ïîë³àì³äíà ñìîëà potting ~ ñìîëà äëÿ ãåðìåòèçàö³¿ silicone ~ êðåìí³éîðãàí³÷íà ñìîëà thermoplastic ~ òåðìîïëàñòè÷íà ñìîëà thermosetting ~ òåðìîðåàêòèâíà ñìîëà resinate ïðîñî÷óâàòè ñìîëîþ resist ðåçèñò; ôîòîðåçèñò alkaline strippable ~ ðåçèñò, ùî óñóâàºòüñÿ ëóæíèì ðîç÷èíîì Azoplate (photo) ~ ôîòîðåçèñò ô³ðìè «Àçîïëåéò» (ÑØÀ) carbonaceous ~ âóãëåöåâèé ðåçèñò deep-UV ~ ðåçèñò, ÷óòëèâèé äî äàëüíüîãî óëüòðàô³îëåòîâîãî âèïðîì³íþâàííÿ dopant ~ ëåãîâàíèé ðåçèñò dry-developed [dry-film] ~ ñóõèé ïë³âêîâèé ôîòîðåçèñò electron-beam [electron-sensitive] ~ åëåêòðîííèé ðåçèñò, åëåêòðîíîðåçèñò halide ~ ðåçèñò íà îñíîâ³ ãàëîãåí³äíîãî ç’ºäíàííÿ, ãàëîãåí³äíèé ðåçèñò high-speed ~ øâèäêîä³éíèé ðåçèñò, ðåçèñò ç êîðîòêèì ÷àñîì åêñïîíóâàííÿ
imaged ~ åêñïîíîâàíèé ðåçèñò large molecular weight ~ ðåçèñò ç âèñîêîþ ìîëåêóëÿðíîþ ìàñîþ metal etch ~ ðåçèñò äëÿ ë³òîãðàô³¿ ïî ìåòàëåâèõ ïë³âêàõ multilayer [multilevel] ~ áàãàòîøàðîâèé ðåçèñò near-UV ~ ðåçèñò, ÷óòëèâèé äî áëèæíüîãî óëüòðàô³îëåòîâîãî âèïðîì³íþâàííÿ negative(-type) ~ íåãàòèâíèé ðåçèñò non-liquid ~ ñóõèé ïë³âêîâèé ôîòîðåçèñò novolak-based ~ ðåçèñò íà îñíîâ³ íîâîëàê³â optical [photo] ~ ôîòîðåçèñò photopolymer ~ ïîë³ìåðíèé (îðãàí³÷íèé) ôîòîðåçèñò polysiloxane ~ ïîë³ñèëîêñàíîâèé (åëåêòðîííèé) ðåçèñò positive(-type) ~ ïîçèòèâíèé ðåçèñò printed-circuit ~ ôîòîðåçèñò äëÿ äðóêîâàíî¿ ïëàòè radiation-sensitive ~ ðåçèñò, ÷óòëèâèé äî âèïðîì³íþâàííÿ screenable ~ ôîòîðåçèñò äëÿ òðàôàðåòíîãî äðóêó self-developing ~ ðåçèñò, ùî ñàìîâèÿâëÿºòüñÿ slow ~ ïîâ³ëüíèé ðåçèñò, ðåçèñò ç âåëèêèì ÷àñîì åêñïîíóâàííÿ ultraviolet(-sensitive) ~ ôîòîðåçèñò, ÷óòëèâèé äî óëüòðàô³îëåòîâîãî [ÓÔ]âèïðîì³íþâàííÿ X-ray ~ ðåçèñò äëÿ ðåíòãåíîãðàô³¿, ðåíòãåíîðåçèñò resistance 1. (àêòèâíèé) îï³ð 2. ñò³éê³ñòü, ñò³éê³ñòü abrasion ~ çíîñîñò³éê³ñòü alternating-current ~ îï³ð (ïî) çì³ííîìó ñòðóìó back ~ çâîðîòíèé îï³ð body ~ 1. îï³ð ï³äêëàäêè 2. îá’ºìíèé îï³ð direct-current ~ îï³ð (ïî) ïîñò³éíîìó ñòðóìó distributed ~ ðîçïîä³ëåíèé îï³ð etch ~ ñò³éê³ñòü äî òðàâèíèêà; ñò³éê³ñòü òðàâëåííÿ forward ~ ïðÿìèé îï³ð fungus ~ ïëåñíåñòîéêîñòü, ñò³éê³ñòü äî ïë³ñíÿâè (íàïð. ä³åëåêòðèêà) heat ~ òåïëîñò³éê³ñòü; òåðì³÷íèé îï³ð
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res jum ~ ïåðåøêîäîçàõèùåí³ñòü, hybrid ~ ðåçèñòîð äëÿ Ã²Ñ çàâàäîçàõèùåí³ñòü integrated ~ ³íòåãðàëüíèé ðåçèñòîð leakage ~ îï³ð âèòîêó ion-implanted ~ ³îííî-³ìïëàíòîâàíèé load ~ îï³ð íàâàíòàæåííÿ ðåçèñòîð lumped ~ çîñåðåäæåíèé îï³ð large-value ~ âèñîêîîìíèé ðåçèñòîð moisture ~ âîëîãîñò³éê³ñòü laser-trimmed ~ ðåçèñòîð ç ëàçåðíîþ off ~ îï³ð â çàêðèòîìó ñòàí³ ï³äãîíêîþ ohmic ~ àêòèâíèé îï³ð loading ~ ðåçèñòîð íàâàíòàæåííÿ process ~ ñò³éê³ñòü äî òåõíîëîã³÷íî¿ low-temperature îáðîáêè coefficient ~ ðåçèñòîð ç íèçüêèì ÒÊÑ radiation ~ ðàä³àö³éíà ñò³éê³ñòü low-value ~ íèçüêîîìíèé ðåçèñòîð reverse ~ çâîðîòíèé îï³ð LWT ~ ðåçèñòîð ç ëàçåðíîþ ï³äãîíêîþ saturation ~ îï³ð íàñè÷åííÿ MELF ~ (äèñêðåòíèé) ðåçèñòîð ç sheet ~ ïîâåðõíåâèé îï³ð øàðó òîðöåâèìè æîðñòêèìè âèâîäàìè (äëÿ shock ~ óäàðîñò³éê³ñòü ïîâåðõíåâîãî ìîíòàæó) specific ~ ïèòîìèé îï³ð metal-film ~ ìåòàëîïë³âêîâèé ðåçèñòîð spreading ~ ðîçïîä³ëåíèé îï³ð metal-îõide ~ ìåòàëîîêñèäíèé ðåçèñòîð tarnish ~ ñò³éê³ñòü äî ïîòüìÿí³ííÿ microchip ~ áåçêîðïóñíèé ì³êðîðåçèñòîð termination ~ êîíòàêòíèé îï³ð microfilm ~ ïë³âêîâèé ì³êðîðåçèñòîð volume ~ îá’ºìíèé îï³ð monolithic ~ ³íòåãðàëüíèé ðåçèñòîð wear ~ çíîñîñò³éê³ñòü negative temperature ñîåfficient ~ ðåçèñòîð resistivity ïèòîìèé îï³ð ç íåãàòèâíèì ÒÊÑ intrinsic ~ âëàñíèé ïèòîìèé îï³ð off-chip ~ íàâ³ñíèé ðåçèñòîð lateral ~ ïîçäîâæí³é ïèòîìèé îï³ð on-chip ~ ³íòåãðàëüíèé ðåçèñòîð sheet ~ ïîâåðõíåâèé ïèòîìèé îï³ð øàðó pinch ~ âèñîêîîìíèé äèôóç³éíèé ðåçèñòîð surface ~ ïîâåðõíåâèé ïèòîìèé îï³ð ³ç çâóæåíèì ïðîâ³äíèì êàíàëîì resistor ðåçèñòîð polysilicon ~ ðåçèñòîð ç ïîë³êðèñòàë³÷íîãî ballasting ~ áàëàñòíèé ðåçèñòîð êðåìí³þ base-metal ~ ðåçèñòîð íà îñíîâ³ positive temperature ñîåfficient ~ ðåçèñòîð íåáëàãîðîäíîãî ìåòàëó ç ïîçèòèâíèì ÒÊÑ bias (ing) ~ ðåçèñòîð â êîë³ çì³ùåííÿ pull-up ~ ðåçèñòîð íàâàíòàæåííÿ bleeder ~ ñòàá³ë³çóþ÷èé ðåçèñòîð screened(-on)~ òîâñòîïë³âêîâèé ðåçèñòîð, íàâàíòàæåííÿ ðåçèñòîð, ñôîðìîâàíèé òðàôàðåòíèì bridge sheet ~ òåñòîâèé ðåçèñòîð äëÿ äðóêîì âèì³ðþâàííÿ ïîâåðõíåâîãî îïîðó øàðó semiconductor ~ íàï³âïðîâ³äíèêîâèé ñårmet ~ êåðìåòíèé [ìåòàëîêåðàì³÷íèé] ðåçèñòîð ðåçèñòîð tapped ~ ðåçèñòîð ç â³äâåäåííÿìè chip ~ áåçêîðïóñíèé ðåçèñòîð trimmed ~ 1. ï³ä³ãíàíèé ðåçèñòîð 2. deposited ~ îñàäæåíèé (ïë³âêîâèé) ðåçèñòîð ï³äñòðîºíèé ðåçèñòîð diffused ~ äèôóç³éíèé ðåçèñòîð tunnel ~ òóíåëüíèé ðåçèñòîð (êîìá³íàö³ÿ discrete ~ äèñêðåòíèé ðåçèñòîð òóíåëüíîãî ä³îäà ³ ðåçèñòîðà) evaporated ~ íàïèëåíèé (ïë³âêîâèé) van der Pauw sheet ~ òåñòîâèé ðåçèñòîð äëÿ ðåçèñòîð âèì³ðþâàííÿ ïèòîìîãî ïîâåðõíåâîãî îïîðó field-effect transistor ~ ðåçèñòîð ³ç øàðó ñòðóêòóðîþ ïîëüîâîãî òðàíçèñòîðà voltage-controlled ~ âàðèñòîð film ~ ïë³âêîâèé ðåçèñòîð walled ~ (³íòåãðàëüíèé) ðåçèñòîð, fixed ~ ïîñò³éíèé ðåçèñòîð îáìåæåíèé îêñèäíèìè ñò³íêàìè glass-frit ~ ðåçèñòîð ³ç çàõèñíèì ñêëÿíèì resolution 1. ðîçä³ëüíà çäàòí³ñòü, äîçâ³ë 2. ðîç÷èíåííÿ ïîêðèòòÿì ~ fault location ãëèáèíà ïîøóêó äåôåêòó high-value ~ âèñîêîîìíèé ðåçèñòîð
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rin fine [high] ~ âèñîêà ðîçä³ëüíà çäàòí³ñòü, âèñîêèé äîçâ³ë image ~ ðîçä³ëüíà çäàòí³ñòü çîáðàæåííÿ line-width ~ ðîçä³ëüíà çäàòí³ñòü, ÿêà âèçíà÷àºòüñÿ øèðèíîþ ë³í³¿ (åëåìåíòó ²Ñ); ì³í³ìàëüíà øèðèíà ë³í³¿ (åëåìåíòó ²Ñ) lithographic ~ ðîçä³ëüíà çäàòí³ñòü ïðîöåñó ë³òîãðàô³¿ low ~ íèçüêà ðîçä³ëüíà çäàòí³ñòü, íèçüêèé äîçâ³ë mask ~ ðîçä³ëüíà çäàòí³ñòü øàáëîíà; ðîçä³ëüíà çäàòí³ñòü ìàñêè optical lithographic ~ ðîçä³ëüíà çäàòí³ñòü ôîòîë³òîãðàô³¿ positional ~ òî÷í³ñòü ïîçèö³îíóâàííÿ submicrometer ~ ñóáì³êðîííà ðîçä³ëüíà çäàòí³ñòü track ~ ðîçä³ëüíà çäàòí³ñòü, âèçíà÷óâàíà øèðèíîþ ñòðóìîïðîâ³äíî¿ äîð³æêè; ì³í³ìàëüíà øèðèíà ñòðóìîïðîâ³äíî¿ äîð³æêè ultrafine ~ íàäâèñîêà ðîçä³ëüíà çäàòí³ñòü resolve 1. äîçâîëÿòè 2. ðîç÷èíÿòè(öÿ) resonance ðåçîíàíñ electron ñóclotron ~ åëåêòðîííèé öèêëîòðîííèé ðåçîíàíñ electron paramagnetic ~ åëåêòðîííèé ïàðàìàãí³òíèé ðåçîíàíñ ferromagnetic ~ ôåðîìàãí³òíèé ðåçîíàíñ resonator ðåçîíàòîð piezoelectric ~ ï’ºçîåëåêòðè÷íèé ðåçîíàòîð quartz ~ êâàðöîâèé ðåçîíàòîð response 1. ðåàêö³ÿ, ñïðàöüîâóâàííÿ | ðåàãóâàòè; ñïðàöüîâóâàòè 2. õàðàêòåðèñòèêà; çàëåæí³ñòü; àìïë³òóäíî÷àñòîòíà õàðàêòåðèñòèêà, À×Õ (äèâ. ò-æ characteristic, curve) amplitude-frequency ~ àìïë³òóäíî-÷àñòîòíà õàðàêòåðèñòèíî, À×Õ etch ~ ÷óòëèâ³ñòü äî òðàâíèêà fast ~ øâèäêå ñïðàöüîâóâàííÿ, øâèäêîä³ÿ frequency ~ àìïë³òóäíî-÷àñòîòíà õàðàêòåðèñòèêà, À×Õ high-speed ~ øâèäêå ñïðàöüîâóâàííÿ, øâèäêîä³ÿ linear ~ ë³í³éíà õàðàêòåðèñòèêà slow ~ ïîâ³ëüíå ñïðàöüîâóâàííÿ time ~ òèì÷àñîâà õàðàêòåðèñòèêà transient ~ ïåðåõ³äíà õàðàêòåðèñòèêà restriction:
relaxed ~s assignment îñëàáëåí³ îáìåæåííÿ íà ïîðÿäîê ïðèâëàñíåííÿ (çíà÷åíü çì³ííèì â ïðîöåäóðí³é ìîâ³ ïðîãðàìóâàííÿ) retainer óòðèìóâà÷; êàñåòà retardant ³íã³á³òîð retention: charge ~ çáåðåæåííÿ çàðÿäó retentivity çàëèøêîâà ìàãí³òíà ³íäóêö³ÿ reticle ïðîì³æíèé ôîòîøàáëîí; ôîòîîðèã³íàë electron-beam ~ øàáëîí äëÿ åëåêòðîííîïðîìåíåâî¿ ë³òîãðàô³¿ master ~ 1. åòàëîííèé ôîòîøàáëîí 2. ôîòîîðèã³íàë pellicled ~ ïë³âêîâèé ïðîì³æíèé øàáëîí 10 x ~ ïðîì³æíèé ôîòîøàáëîí â ìàñøòàá³ 10 : 1; ôîòîîðèã³íàë â ìàñøòàá³ 10 . 1 retrieval: full text ~ ïîøóê ïî âñüîìó òåêñòó linear associative ~ ë³í³éíèé àñîö³àòèâíèé ïîøóê retrofit: field ~ ìîäèô³êàö³ÿ â ïðîöåñ³ åêñïëóàòàö³¿ reversal: field ~ çì³íà ïîëÿðíîñò³ (åëåêòðè÷íîãî) ïîëÿ flux ~ çì³íà çíàêó (ìàãí³òíîãî) ïîòîêó image ~ ïåðåòâîðåííÿ çîáðàæåííÿ (íàïð. ïîçèòèâíîãî â íåãàòèâíå) reverse-biased îáåðíåíîçì³ùåíèé ribbon ñòð³÷êà; ñìóæêà poly (silicon) ~ ñòð³÷êà ïîë³êðèñòàë³÷íîãî êðåìí³þ sapphire ~ ñàïô³ðîâà ñòð³÷êà silicon-on-sapphire ~ ñàïô³ðîâà ñòð³÷êà ç øàðîì êðåìí³þ single-crystal ~ ìîíîêðèñòàë³÷íà ñòð³÷êà white ~ «á³ëà ñòð³÷êà» (äåôåêò, ó âèãëÿä³ òîíêî¿ ñìóæêè í³òðèäó êðåìí³þ) ring 1. ê³ëüöå 2. ê³ëüöåâèé ãåíåðàòîð; ê³ëüöåâèé ë³÷èëüíèê base ~ áàçîâèé ê³ëüöåâèé êîíòàêò counter ~ ê³ëüöåâèé ë³÷èëüíèê electron storage ~ ê³ëüöåâèé íàêîïè÷óâà÷ åëåêòðîí³â, íàêîïè÷óâàëüíå ê³ëüöå (â ðåíòãåí³âñüê³é ë³òîãðàô³÷í³é óñòàíîâö³) guard ~ îõîðîííå ê³ëüöå n+ guard ~ îõîðîííå ê³ëüöå n+-òèïó p+ guard ~ îõîðîííå ê³ëüöå ð+-òèïó planarization ~ ê³ëüöå, ùî çàáåçïå÷óº ïëîùèííó (íàïð. äëÿ ïîñàäêè êðèñòàëà ²Ñ)
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rou p-well guard ~ îõîðîííå ê³ëüöå êèøåí³ ðòèïó self-aligned guard ~ ñàìîñóì³ùåíå îõîðîííå ê³ëüöå super-conducting electron storage ~ ê³ëüöåâèé åëåêòðîííèé íàêîïè÷óâà÷ [íàêîïè÷óâàëüíå ê³ëüöå] ç íàäïðîâ³äíèìè ìàãí³òàìè rinse 1. ïðîìèâêà, ïðîìèâàííÿ | ïðîìèâàòè 2. ïðîìèâàëüíà âîäà rinser óñòàíîâêà äëÿ ïðîìèâêè (³ î÷èùåííÿ) dump ~ óñòàíîâêà äëÿ ïðîìèâêè ç ïåðåêèäàííÿì êàñåò quick ~ âèñîêîïðîäóêòèâíà óñòàíîâêà äëÿ ïðîìèâêè rinsing ïðîìèâêà deionized-water ~ ïðîìèâêà äå³îí³çîâàíîþ âîäîþ, ïðîìèâêà â äå³îíçîâàí³é âîä³ ripple øîðñòê³ñòü riser âåðòèêàëüíà ïðîâ³äíà ïåðåìè÷êà robot ðîáîò messenger ~ ðîáîò äëÿ òðàíñïîðòóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí (ì³æ ìîäóëÿìè) white ~ ðîáîò äëÿ ÷èñòèõ âèðîáíè÷èõ ïðèì³ùåíü robotics: flexible ~ ãíó÷êà ðîáîòîòåõí³êà (äëÿ äð³áíîñåð³éíîãî àâòîìàòèçîâàíîãî âèðîáíèöòâà) robotization ðîáîòèçàö³ÿ; àâòîìàòèçàö³ÿ íà îñíîâ³ ðîáîò³â rod: crystal seed ~ ìîíîêðèñòàë³÷íèé ñòðèæåíü ïðèìàíêè polycrystalline ~ ïîë³êðèñòàë³÷íèé ñòðèæåíü; ïîë³êðèñòàë³÷íèé çëèòîê semiconductor ~ íàï³âïðîâ³äíèêîâèé çëèòîê single-crystal ~ ìîíîêðèñòàë³÷íèé ñòðèæåíü; ìîíîêðèñòàë³÷íèé çëèòîê roll 1. âàë; ðîëèê; áàðàáàí 2. ðóëîí roller âàë; ðîëèê; áàðàáàí clamping ~ ïðèòèñêíèé ðîëèê pressure ~ êîìïðåñ³éíèé ðîëèê (äëÿ ãåðìåòèçàö³¿ ïëàíàðíèõ êîðïóñ³â); ïðèòèñêíèé ðîëèê romware ïðîãðàìíå çàáåçïå÷åííÿ ïîñò³éíîãî çàïàì’ÿòîâóâàííÿ (â ÏÇÏ, ÏÏÇÏ, ÏËÌ) room:
assembly ~ âèðîáíè÷å ïðèì³ùåííÿ äëÿ çá³ðêè class 100 clean ~ ÷èñòå âèðîáíè÷å ïðèì³ùåííÿ êëàñó 100 clean ~ ÷èñòå âèðîáíè÷å ïðèì³ùåííÿ, ÷èñòà ê³ìíàòà clean dry ~ ÷èñòå âèðîáíè÷å ïðèì³ùåííÿ ç îñóøåíîþ àòìîñôåðîþ contaminant-free ~ ÷èñòå âèðîáíè÷å ïðèì³ùåííÿ, ÷èñòà ê³ìíàòà dust-free ~ çíåïèëåíå âèðîáíè÷å ïðèì³ùåííÿ laminar-flow ultra-clean ~ íàä÷èñòå âèðîáíè÷å ïðèì³ùåííÿ ç ëàìèíàðíèì ïîòîêîì îá÷èùåíîãî ïîâ³òðÿ white ~ ÷èñòå âèðîáíè÷å ïðèì³ùåííÿ, ÷èñòà ê³ìíàòà yellow ~ æîâòà ê³ìíàòà (÷èñòå âèðîáíè÷å ïðèì³ùåííÿ äëÿ ïðîâåäåííÿ ïðîöåñó ôîòîë³òîãðàô³¿) rotation: domain ~ ïîâîðîò äîìåí³â roughness øîðñòê³ñòü rounding: laser ~ ëàçåðíå îêðóãëÿº, ëàçåðíå çãëàäæóâàííÿ (íàïð. âèñòóï³â íà ïîâåðõí³) routability òðàññèðóåìîñòü route 1. òðàñà, øëÿõ; ìàðøðóò 2. òðàñóâàííÿ | òðàñóâàòè 3. ðîçâîäêà; ç’ºäíàííÿ | ôîðìóâàòè ðîçâîäêó (äèâ. ò-æ wiring) à to ~ wires âèêîíóâàòè òðàñóâàííÿ ç’ºäíàíü custom ~ çàìîâëåíà ðîçâîäêà design ~ ïîñë³äîâí³ñòü ïðîåêòóâàííÿ semicustom ~ íàï³âçàìîâëåíà ðîçâîäêà router ïðîãðàìà òðàñóâàííÿ, òðàñóâàëüíèê automatic ~ ïðîãðàìà àâòîìàòè÷íîãî òðàñóâàííÿ block ~ ïðîãðàìà ðîçì³ùåííÿ áëîê³â channel ~ ïðîãðàìà êàíàëüíîãî òðàñóâàííÿ, êàíàëüíèé òðàñóâàëüíèê grid-free channel ~ êàíàëüíèé òðàñóâàëüíèê çîâí³ òåõíîëîã³÷íî¿ ñ³òêè interactive ~ ïðîãðàìà ä³àëîãîâîãî òðàñóâàííÿ local ~ ïðîãðàìà ëîêàëüíîãî òðàñóâàííÿ maze ~ ãåíåðàòîð òîïîëî㳿 ìàòðè÷íèõ Â²Ñ ³ äðóêîâàíî¿ ïëàòè, çàñíîâàíèé íà õâèëüîâîìó àëãîðèòì³ routine 1. (ñòàíäàðòíà) ïðîãðàìà 2. àëãîðèòì check(ing)~ ïðîãðàìà êîíòðîëþ
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acc debugging ~ íàêîïè÷óâàëüíà ïðîãðàìà project and case evaluator ~ ïðîãðàìà îö³íêè ïðîåêò³â routing 1. òðàñóâàííÿ; ìàðøðóòèçàö³ÿ; ôîðìóâàííÿ ðîçâîäêè 2. ðîçâîäêà; ç’ºäíàííÿ auto ~ àâòîìàòè÷íå òðàñóâàííÿ, àâòîòðàñóâàííÿ automated wire ~ àâòîìàòèçîâàíå êàíàëüíå òðàñóâàííÿ automatic alternative ~ àâòîìàòè÷íà çì³íà ìàðøðóòó ïðîâåäåííÿ ì³æç’ºäíàíü â Â²Ñ channel ~ êàíàëüíå òðàñóâàííÿ computerized wafer ~ ðîçïîä³ë íàï³âïðîâ³äíèêîâèõ ïëàñòèí ïî òåõíîëîã³÷íèõ îïåðàö³ÿõ ç âèêîðèñòàííÿì ÅÎÌ detailed ~ äåòàë³çîâàíå òðàñóâàííÿ distributed adaptive ~ ðîçïîä³ëåíà àäàïòèâíà ìàðøðóòèçàö³ÿ dynamic ~ äèíàì³÷íà ìàðøðóòèçàö³ÿ; äèíàì³÷íèé áóä³âíèê ì³æç’ºäíàíü global ~ ãëîáàëüíå òðàñóâàííÿ interconnect ~ òðàñóâàííÿ, ïðîâåäåííÿ ì³æç’ºäíàíü local ~ ëîêàëüíå òðàñóâàííÿ metallization ~ ñïîëó÷íà ìåòàë³çàö³ÿ; ñòðóìîïðîâ³äí³ äîð³æêè multiple-spindle ~ ôîðìóâàííÿ ñòðóìîïðîâ³äíèõ äîð³æîê çà äîïîìîãîþ áàãàòîøï³íäåëüíîãî ôðåçåðíîãî âåðñòàòà grid ~ òðàñóâàííÿ áåç ñ³òêè ON grid ~ òðàñóâàííÿ ïî ñ³òö³ through-the-pattern ~ ç’ºäíàííÿ ì³æ øàðàìè ñòðóìîïðîâ³äíèõ äîð³æîê (â áàãàòîøàðîâ³é äðóêîâàí³é ïëàò³) topological ~ òîïîëîã³÷íå òðàñóâàííÿ wire ~ òðàñóâàííÿ ç’ºäíàíü rule 1. ïðàâèëî 2. íîðìà design ~ 1. ïðàâèëî ïðîåêòóâàííÿ 2. (òîïîëîã³÷íà) ïðîåêòíà íîðìà (ì³í³ìàëüíèé ðîçì³ð åëåìåíòó ²Ñ) electrical ~ 1. ïðàâèëî åëåêòðè÷íîãî ç’ºäíàííÿ; ïðàâèëî ïîáóäîâè ñõåìè 2. íîðìà íà åëåêòðè÷íó ñõåìó fan-out ~ êîåô³ö³ºíò ðîçãàëóæåííÿ ïî âèõîäó gate array wiring ~ ïðàâèëî òðàñóâàííÿ ëîã³÷íèõ ìàòðèöü geometry (design) ~ òîïîëîã³÷íà ïðîåêòíà íîðìà inference ~ äåäóêòèâíå ïðàâèëî
layout ~ òîïîëîã³÷íà ïðîåêòíà íîðìà physical design ~ ô³çè÷íà ïðîåêòíà íîðìà Rent’s ~ (ñòàòèñòè÷íå) ïðàâèëî Ðåíòà (ñï³ââ³äíîøåííÿ ì³æ ÷èñëîì âèâîä³â êîðïóñó ³ ñòóïåíåì ³íòåãðàö³¿ ²Ñ â ëîã³÷íèõ ìàòðèöÿõ) technology-specific ~s òåõíîëîã³÷í³ íîðìè tight ~ æîðñòêà ïðîåêòíà íîðìà via spacing ~ ïðàâèëî ñòâîðåííÿ ïåðåìè÷îê [â³äâåäåíü] íàä òðàñàìè â³äâåäåíü wire ~ ïðàâèëî òðàñóâàííÿ wire spacing ~ ïðàâèëî ðîçì³ùåííÿ òðàñ wiring pattern spacing ~ ïðàâèëî ðîçì³ùåííÿ îáëàñòåé òðàñóâàíü run 1. ñòðóìîïðîâ³äíà äîð³æêà; øèíà 2. ïàðò³ÿ (ïðèëàä³â) 3. öèêë; îïåðàö³ÿ first-level conductor ~ ñòðóìîïðîâ³äíà äîð³æêà ïåðøîãî ð³âíÿ (â áàãàòîð³âíåâèõ ç’ºäíàííÿõ) runaway â³äõ³ä; â³äõèëåííÿ (íàïð. ïàðàìåòðà) thermal ~ â³äõ³ä ïàðàìåòðà ÷åðåç çì³íó òåìïåðàòóðè; òåðì³÷íà íåñòàá³ëüí³ñòü runout: bubble ~ ïåðåõ³ä ÖÌÄ â ñìóãîâèé äîìåí; åë³ïòè÷íà íåñò³éê³ñòü ÖÌÄ runover íàò³êàííÿ; ðîçò³êàííÿ (íàïð. ôîòîðåçèñòà)
S safety: hazardous gas ~ çàáåçïå÷åííÿ áåçïåêè ïðè ðîáîò³ ç òîêñè÷íèìè ³ âèáóõîíåáåçïå÷íèìè ãàçàìè sample 1. (äîñë³äíèé) çðàçîê | ïðîâîäèòè (äîñë³äí³) çðàçêè 2. âèá³ðêà | ïðîâîäèòè âèá³ðêó; ïðîâîäèòè âèá³ðêîâ³ âèïðîáóâàííÿ as-affected ~ çðàçîê â³äðàçó ï³ñëÿ òðàâëåííÿ engineering ~ äîñë³äíèé çðàçîê qualification ~ çðàçîê äëÿ êâàë³ô³êàö³éíèõ âèïðîáóâàíü wet-clean ~ çðàçîê, ï³ääàíèé î÷èùåííþ â ð³äèí³ sample/hold ñõåìà âèá³ðêè ³ çáåð³ãàííÿ sampling 1. âèðîáíèöòâî (äîñâ³ä÷åíèõ) çðàçê³â 2. âèá³ðêà; âèá³ðêîâ³ âèïðîáóâàííÿ 3. â³äá³ð ïðîá; âçÿòòÿ ïðîá acceptance ~ âèá³ðêîâèé ïðèéìàëüíèé êîíòðîëü
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sca electro-optic ~ åëåêòðîîïòè÷íà âèá³ðêà (íàçâà ñïîñîáó ëàçåðíîãî âèì³ðþâàííÿ âèñîêî¿ øâèäêî䳿 íîâèõ íàï³âïðîâ³äíèêîâèõ ñòðóêòóð) sandblaster óñòàíîâêà ï³ñêîñòðóìèííî¿ îáðîáêè sandblasting ï³ñêîñòðóìèííå î÷èùåííÿ sanding øë³ôóâàííÿ, øë³ôîâêà sandwich òðèøàðîâà ñòðóêòóðà, ñòðóêòóðà òèïó «ñàíäâ³÷» | ôîðìóâàòè ñòðóêòóðó òèïó «ñàíäâ³÷» saturation 1. íàñè÷åííÿ 2. ðåæèì íàñè÷åííÿ channel current ~ íàñè÷åííÿ êàíàëüíîãî ñòðóìó velocity ~ íàñè÷åííÿ øâèäêîñò³ (íàïð. íîñ³¿â) saver: MOS ~ ïðèñòð³é äëÿ çàõèñòó ÌÎÍ ²Ñ â³ä ïîøêîäæåííÿ ñòàòè÷íîþ åëåêòðèêîþ saving: space-weight ~ ïîë³ïøåííÿ ìàññîãàáàðèòíèõ õàðàêòåðèñòèê saw 1. ïèëà | ðîçïèëþâàòè 2. óñòàíîâêà äëÿ ð³çàííÿ annular ~ äèñêîâà ïèëà ç âíóòð³øíüîþ ð³æó÷îþ êðîìêîþ diamond ~ äèñêîâà ïèëà ç àëìàçíîþ ð³æó÷îþ êðîìêîþ microprocessor-controlled ~ óñòàíîâêà äëÿ ð³çàííÿ ç ì³êðîïðîöåñîðíèì óïðàâë³ííÿì peripheral ~ äèñêîâà ïèëà ³ç çîâí³øíüîþ ð³æó÷îþ êðîìêîþ wire ~ äðîòÿíà ïèëà scalability ìàñøòàáîâàí³ñòü, ìîæëèâ³ñòü ïðîïîðö³éíîãî çìåíøåííÿ ðîçì³ð³â (åëåìåíò³â ²Ñ) scale 1. øêàëà 2. ìàñøòàá 3. ñòóï³íü ³íòåãðàö³¿ 4. ìàñøòàáóâàòè, ïðîïîðö³éíî çìåíøóâàòè ðîçì³ðè (åëåìåíò³â ²Ñ) ~ integration ñòóï³íü ³íòåãðàö³¿ atomic ~ àòîìíà øêàëà projection reduction ~ ìàñøòàá çìåíøåííÿ ïðè ïðîåêö³éí³é ë³òîãðàô³¿ sealer ë³÷èëüíèê; ïåðåë³÷óâàëüíà (ë³÷èëüíà) ñõåìà ring ~ ê³ëüöåâèé ë³÷èëüíèê scaling ìàñøòàáóâàííÿ, ïðîïîðö³éíå çìåíøåííÿ ðîçì³ð³â (åëåìåíò³â ²Ñ) automatic ~ àâòîìàòè÷íå ìàñøòàáóâàííÿ
dimensional ~ ìàñøòàáóâàííÿ, ïðîïîðö³éíå çìåíøåííÿ ðîçì³ð³â electrical ~ çì³íà åëåêòðè÷íèõ ïàðàìåòð³â ïðè ìàñøòàáóâàíí³ geometric ~ ãåîìåòðè÷íå ìàñøòàáóâàííÿ, ïðîïîðö³éíå çìåíøåííÿ ãåîìåòðè÷íèõ ðîçì³ð³â horizontal ~ ïðîïîðö³éíå çìåíøåííÿ ãîðèçîíòàëüíèõ ðîçì³ð³â linewidth ~ çìåíøåííÿ øèðèíè ë³í³¿ quasi-geometrical ~ êâàç³ãåîìåòðè÷íå ìàñøòàáóâàííÿ simple ~ ïðîñòå ìàñøòàáóâàííÿ (íàïð. ò³ëüêè â ãîðèçîíòàëüí³é ïëîùèí³) vertical ~ ïðîïîðö³éíå çìåíøåííÿ âåðòèêàëüíèõ ðîçì³ð³â scaling-down ìàñøòàáóâàííÿ, ïðîïîðö³éíå çìåíøåííÿ ðîçì³ð³â (åëåìåíò³â ²Ñ) scan 1. ñêàíóâàííÿ; ïåðåãëÿä | ñêàíóâàòè 2. ðîçãîðòêà | ðîçãîðòàòè 3. ïðîõ³ä (ïðè ìîäåëþâàíí³ Â²Ñ) flying spot ~ ñêàíóâàííÿ á³æó÷îãî ïðîìåíÿ level-sensitive ~ ñêàíóâàííÿ ïðîìåíåì ç îáìåæåíîþ ³íòåíñèâí³ñòþ line ~ 1. ðÿäêîâå ñêàíóâàííÿ 2. ðÿäêîâà ðîçãîðòêà line-by-line ~ ïîðÿäêîâå ñêàíóâàííÿ parallel ~ ïàðàëåëüíèé ïåðåãëÿä random ~ íåðåãóëÿðíå ñêàíóâàííÿ raster ~ ðàñòðîâå ñêàíóâàííÿ serial ~ ïîñë³äîâíèé ïåðåãëÿä vector ~ âåêòîðíå ñêàíóâàííÿ scan-in ïðÿìèé äîñòóï äî âõîä³â ï³äñõåì, êåðîâàí³ñòü ï³äñõåì scanner 1. ñêàíóþ÷å ïðèñòð³é 2. ðîçãîðòàþ÷å ïðèñòð³é barcode ~ ïðèñòð³é äëÿ ïðî÷èòóâàííÿ øòðèõîâîãî êîäó wafer ~ óñòàíîâêà åëåêòðîííî-ïðîìåíåâî¿ ë³òîãðàô³¿ ç ñêàíóâàííÿì äëÿ ôîðìóâàííÿ ³íòåãðàëüíèõ ñòðóêòóð íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ scanning 1. ñêàíóâàííÿ 2. ðîçãîðòêà (äèâ. ò-æ scan) linear-image ~ ñêàíóâàííÿ (â åëåêòðîííîïðîìåíåâ³é ë³òîãðàô³¿) äëÿ ôîðìóâàííÿ ïðÿìîë³í³éíèõ ñòðóêòóð single-beam ~ îäíîïðîìåíåâå ñêàíóâàííÿ scan-out ïðÿìèé äîñòóï äî âèõîä³â ï³äñõåì, íàáëþäàåìîñòü (ñïîñòåðåæåííÿ) ï³äñõåì
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scr scatter ðîçñ³þâàííÿ; ðîçêèä | ðîçñ³þâàòè back ~ çâîðîòíå ðîçñ³þâàííÿ scatter(ing) ðîçñ³þâàííÿ Coulomb ~ êóëîí³âñüêå ðîçñ³þâàííÿ deformation potential ~ ðîçñ³þâàííÿ íà äåôîðìàö³éíîìó ïîòåíö³àë³ dislocation ~ ðîçñ³þâàííÿ íà äèñëîêàö³ÿõ electron-phonon ~ ðîçñ³þâàííÿ åëåêòðîí³â íà ôîíîíàõ electron-hole ~ åëåêòðîííî-ä³ð÷àñòå ðîçñ³þâàííÿ gas ~ ðîçñ³þâàííÿ ÷àñòèíîê â ãàç³ grain boundary ~ ðîçñ³þâàííÿ íà ìåæ³ çåðåí intervalley ~ ì³æäîìåííå ðîçñ³þâàííÿ ionized impurity ~ ðîçñ³þâàííÿ åëåêòðîí³â íà ³îí³çîâàííèõ äîì³øêàõ mask ~ ðîçñ³þâàííÿ íà øàáëîí³ optical phonon ~ ðîçñ³þâàííÿ åëåêòðîí³â íà îïòè÷íèõ ôîíîíàõ Raman ~ êîìá³íàö³éíå [ðàìàí³âñüêå] ðîçñ³þâàííÿ surface ~ ðîçñ³þâàííÿ íà ïîâåðõí³ two-valley ~ äâîõäîëèííå ðîçñ³þâàííÿ schedule: assembly ~ ãðàô³ê çá³ðêè diffusion ~ 1. ðåæèì (ïðîöåñó) äèôó糿 2. ïîñë³äîâí³ñòü (ïðîöåñó) äèôó糿 scheduler ïëàíóâàëüíèê (ïðîãðàìà) high-level ~ ïëàíóâàëüíèê âåðõíüîãî ð³âíÿ scheduling: event ~ âêëþ÷åííÿ ïî䳿 â ñïèñîê ïîä³é (â àëãîðèòìàõ òèì÷àñîâîãî ìîäåëþâàííÿ) schematic: circuit ~s ïðèíöèïîâ³ åëåêòðè÷í³ ñõåìè custom-supplied ~s ïðèíöèïîâ³ åëåêòðè÷í³ ñõåìè, ùî ïðåäñòàâëÿþòüñÿ çàìîâíèêîì scheme: computer-aided layout ~ òîïîëîã³÷íà ñõåìà, âèãîòîâëåíà çà äîïîìîãîþ ÅÎÌ deposition ~ ïîñë³äîâí³ñòü îïåðàö³é ïðè îñàäæåíí³ fixed-interconnection ~ ìàëþíîê ô³êñîâàíèõ ì³æç’ºäíàíü layout ~ òîïîëîã³÷íå êðåñëåííÿ logic ~ ëîã³÷íà ñõåìà single-error correction, double-error detection ~ ñõåìà (âáóäîâàíîãî êîíòðîëþ ÇÏÏÂ) ç âèïðàâëåííÿì îäèíî÷íèõ ³ âèÿâëåííÿì ïîäâ³éíèõ ïîìèëîê
standard cell ~ ñõåìà ñòàíäàðòíîãî á³áë³îòå÷íîãî åëåìåíòó; àðõ³òåêòóðà íà ñòàíäàðòíèõ á³áë³îòå÷íèõ åëåìåíòàõ (ñïåö³àë³çîâàíî¿ ²Ñ) Schottky 1. ä³îä Øîòê³ 2. òðàíçèñòîðíîòðàíçèñòîðíà ëîã³÷íà ²Ñ ç ä³îäàìè Øîòê³, ÒÒË ²Ñ ç ä³îäàìè Øîòê³, ÒÃËØ ²Ñ advanced ~ âäîñêîíàëåíà ÒÒËØ ²Ñ low-power ~ ìàëîïîòóæíà ÒÒËØ ²Ñ science: solid-state ~ ô³çèêà òâåðäîãî ò³ëà scope 1. îñöèëîãðàô 2. ì³êðîñêîï micro ~ îñöèëîãðàô ç ì³êðîïðîöåñîðíèì óïðàâë³ííÿì scratch 1. ïîäðÿïèíà 2. ë³í³ÿ ñêðàéáóâàííÿ screen 1. òðàôàðåò | ïðîâîäèòè òðàôàðåòíèé äðóê 2. åêðàí | åêðàíóâàòè 3. â³äáðàêóâàííÿ; âèá³ðêîâèé êîíòðîëü | â³äáðàêîâóâàòè; ïðîâîäèòè âèá³ðêîâ³ âèïðîáóâàííÿ 4. ìàñêóâàòè hundred ðårcent ~ 100-â³äñîòêîâèé âèá³ðêîâèé êîíòðîëü stencil ~ òðàôàðåò äëÿ òîâñòîïë³âêîâèõ Ã²Ñ screenabtlity òåõíîëîã³÷í³ñòü òðàôàðåòíîãî äðóêó screener óñòàíîâêà òðàôàðåòíîãî äðóêó screening 1. òðàôàðåòíèé äðóê, ñ³òêîãðàô³ÿ (äèâ. ò-æ printing) 2. åêðàíóâàííÿ 3. â³äáðàêóâàííÿ; âèá³ðêîâ³ âèïðîáóâàííÿ 4. ìàñêóâàííÿ final ~ ô³í³øíà â³äáðàêóâàííÿ; ô³í³øí³ âèá³ðêîâ³ âèïðîáóâàííÿ high-resolution ~ ïðåöèç³éíèé òðàôàðåòíèé äðóê stress test ~ âèá³ðêîâ³ âèïðîáóâàííÿ ï³ä íàâàíòàæåííÿì thick-film ~ òðàôàðåòíèé äðóê äëÿ òîâñòîïë³âêîâèõ Ã²Ñ scribability ñêðàéáóºì³ñòü, ìîæëèâ³ñòü ñêðàéáóâàííÿ (äëÿ ðîçä³ëåííÿ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè íà êðèñòàëè) scriber 1. ñêðàéáåð, óñòàíîâêà ñêðàéáóâàííÿ 2. (àëìàçíèé) ð³çåöü diamond ~ 1. ñêðàéáåð ç àëìàçíèì ð³çöåì 2. àëìàçíèé ð³çåöü laser ~ ëàçåðíèé ñêðàéáåð wafer ~ ñêðàéáåð äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí scribing ñêðàéáóâàííÿ
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sel contact ~ êîíòàêòíå ñêðàéáóâàííÿ (íàïð. àëìàçíèì ð³çöåì) contactless ~ áåçêîíòàêòíå (íàïð. ëàçåðíå) ñêðàéáóâàííÿ diamond(-point)~ ñêðàéáóâàííÿ àëìàçíèì ð³çöåì laser ~ ëàçåðíå ñêðàéáóâàííÿ non-contact ~ áåçêîíòàêòíå (íàïð. ëàçåðíå) ñêðàéáóâàííÿ scrub â³äìèâàííÿ ³ î÷èùåííÿ | â³äìèâàòè ³ î÷èùàòè electromagnetic ~ åëåêòðîìàãí³òíå î÷èùåííÿ scrubber óñòàíîâêà â³äìèâàííÿ ³ î÷èùåííÿ (äëÿ âèäàëåííÿ îêñèäó ³ ôîòîðåçèñòà) brush ~ óñòàíîâêà â³äìèâàííÿ ³ î÷èùåííÿ ù³òêàìè jet ~ óñòàíîâêà ñòðóìåíåâîãî â³äìèâàííÿ ³ î÷èùåííÿ mask ~ óñòàíîâêà äëÿ â³äìèâàííÿ ³ î÷èùåííÿ ôîòîøàáëîí³â modular track wafer ~ óñòàíîâêà â³äìèâàííÿ ³ î÷èùåííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí ç ìîäóëüíèì íàâàíòàæóâàëüíîðîçâàíòàæóâàëüíèì ïðèñòðîºì scrubbing â³äìèâàííÿ ³ î÷èùåííÿ jet ~ ñòðóìåíåâå â³äìèâàííÿ ³ î÷èùåííÿ scum íåïðîÿâëåíèé ôîòîðåçèñò resist ~ íåïðîÿâëåíèé ôîòîðåçèñò scumming: ozone induced ~ ïðîÿâëåííÿ íåïðîÿâëåíîãî ôîòîðåçèñòà ÷åðåç ïðèñóòí³ñòü îçîíó pattern ~ ïîã³ðøåííÿ ÷³òêîñò³ ìàëþíêà ôîòîðåçèñòíî¿ ìàñêè ÷åðåç çàëèøêè íåïðîÿâëåíîãî ôîòîðåçèñòà seal 1. ñïàé; âïàé | ñïàþâàòè; óïàþâàòè 2. óù³ëüíþþ÷à ïðîêëàäêà; óù³ëüíåííÿ | ãåðìåòèçóâàòè; óù³ëüíþâàòè compression ~ ãåðìåòè÷íå ç’ºäíàííÿ, îäåðæàíå õîëîäíîþ çâàðêîþ faulty ~ 1. äåôåêòíèé ñïàé 2. íåÿê³ñíå óù³ëüíåííÿ glass-to-ñåramic ~ ñêëîêåðàì³÷íèé ñïàé hermetic ~ 1. ãåðìåòè÷íèé ñïàé 2. ãåðìåòè÷íå óù³ëüíåííÿ metal-to-ñåramic ~ ìåòàëîêåðàì³÷íèé ñïàé pressure ~ ïðèòèñêíå óù³ëüíåííÿ reducing athmosphere ~ ñïàé, îäåðæàíèé ó â³äíîâí³é àòìîñôåð³
seam-weld ~ ãåðìåòè÷íå ç’ºäíàííÿ, îäåðæàíå ðîëèêîâîþ çâàðêîþ ultrasonic ~ ñïàé, îäåðæàíèé çà äîïîìîãîþ óëüòðàçâóêà weld ~ 1. çâàðíèé ñïàé 2. çâàðíå ç’ºäíàííÿ scalability 1. ãåðìåòèçîâàí³ñòü, çäàòí³ñòü äî ãåðìåòèçàö³¿ 2. çä³áí³ñòü äî óòâîðåííÿ ñïà¿â sealant ãåðìåòèê; óù³ëüíþâà÷ polymeric ~ ïîë³ìåðíèé ãåðìåòèê sealer 1. óñòàíîâêà äëÿ ïàÿííÿ 2. óñòàíîâêà äëÿ ãåðìåòèçàö³¿ perimeter ~ óñòàíîâêà äëÿ ãåðìåòè÷íîãî ç’ºäíàííÿ êðà¿â êðèøêè ç îñíîâîþ êîðïóñó solder ~ óñòàíîâêà äëÿ ãåðìåòèçàö³¿ ìåòîäîì ïàÿííÿ thermal-conductivity ~ óñòàíîâêà äëÿ ãåðìåòèçàö³¿ ìåòîäîì òåðìîêîìïðåñîðíî¿ çâàðêè sealing 1. ôîðìóâàííÿ ñïà¿â 2. ãåðìåòèçàö³ÿ; óù³ëüíåííÿ adhesive ~ ãåðìåòèçàö³ÿ êëåºì braze ~ ãåðìåòèçàö³ÿ ïàÿííÿì ñåðåäíüîïëàâêèì ïðèïîºì parallel seam ~ ãåðìåòèçàö³ÿ ðîëèêîâîþ çâàðêîþ ç ïàðàëåëüíèì øâîì sea-of-cells «ìîðå êîì³ðîê» (òèï áàçîâîãî ìàòðè÷íîãî êðèñòàëà) sea-of-gates «ìîðå âåíòèë³â» (òèï áàçîâîãî ìàòðè÷íîãî êðèñòàëà) section: capture cross ~ ïåðåòèí (ïåðåð³ç) çàõîïëåííÿ metallographic ~ øë³ô sectioning: laser ~ ëàçåðíå çð³çàº; ëàçåðíèé çð³ç security: hardware ~ àïàðàòíèé çàõèñò multilevel ~ áàãàòîð³âíåâèé çàõèñò seed ïðèìàíêà | âèêîðèñòîâóâàòè ïðèìàíêó segment: metal personalized wiring ~ ñåãìåíò òðàñóâàííÿ, íàíåñåíèé ìåòàë³çàö³ºþ segregation ñåãðåãàö³ÿ impurity ~ ñåãðåãàö³ÿ äîì³øêè self-interstitial ~ ñåãðåãàö³ÿ âëàñíèõ ì³æâóçëîâèõ àòîì³â selectivity: chemical ~ âèá³ðêîâ³ñòü 䳿 õ³ì³÷íèõ ðåàêòèâ³â
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sem etch rate ~ ñåëåêòèâí³ñòü [ìîæëèâ³ñòü ï³äáîðó øâèäêîñò³] òðàâëåííÿ self-alignment ñàìîñóì³ùåííÿ self-diagnosis ñàìîä³àãíîñòèêà self-isolation ñàìî³çîëÿö³ÿ (åëåìåíò³â ²Ñ) self-repair ñàìîâ³äíîâëåííÿ self-sufficiency for testability àâòîíîìí³ñòü òåñòóâàííÿ self-testing ñàìîòåñòóâàííÿ; ñàìîä³àãíîñòèêà built-in ~ âáóäîâàíà ñàìîä³àãíîñòèêà self-verification ñàìîêîíòðîëü; ñàìîâåðèô³êàö³ÿ semiarray íàï³âìàòðèöÿ, ñóáìàòðèöÿ (ñêëàäîâà ÷àñòèíà ìàòðèö³) semiconductivity ïèòîìà (åëåêòðè÷íà) ïðîâ³äí³ñòü íàï³âïðîâ³äíèêà semiconductor 1. íàï³âïðîâ³äíèê 2. íàï³âïðîâ³äíèêîâèé ïðèëàä acceptor-type ~ ä³ð÷àñòèé íàï³âïðîâ³äíèê, íàï³âïðîâ³äíèê (ç åëåêòðîïðîâ³äí³ñòþ) ðòèïó amorphous ~ àìîðôíèé íàï³âïðîâ³äíèê bare ~ áåçêîðïóñíèé [íåãåðìåòèçîâàíèé] íàï³âïðîâ³äíèêîâèé ïðèëàä boron ~ íàï³âïðîâ³äíèê, ëåãîâàíèé áîðîì broad-area ~ íàï³âïðîâ³äíèêîâèé ïðèëàä ç êðèñòàëîì âåëèêî¿ ïëîù³ bulk ~ îá’ºìíèé íàï³âïðîâ³äíèê compensated ~ íàï³âïðîâ³äíèê, ùî êîìïåíñóºòüñÿ, êîìïåíñîâàíèé íàï³âïðîâ³äíèê compound ~ íàï³âïðîâ³äíèêîâà ñïîëóêà, ñêëàäíèé íàï³âïðîâ³äíèê cubic ~ íàï³âïðîâ³äíèê ç êóá³÷íèìè êðèñòàë³÷íèìè ãðàòîêàìè degenerate ~ âèðîäæåíèé íàï³âïðîâ³äíèê direct-gap ~ íàï³âïðîâ³äíèê ç ïðÿìèìè ïåðåõîäàìè discrete ~ äèñêðåòíèé íàï³âïðîâ³äíèêîâèé ïðèëàä donor-type ~ åëåêòðîííèé íàï³âïðîâ³äíèê, íàï³âïðîâ³äíèê (ç åëåêòðîïðîâ³äí³ñòþ) nòèïó double-heterojunction ~ íàï³âïðîâ³äíèêîâèé ïðèëàä ç äâîìà ãåòåðîïåðåõîäàìè electronic ~ åëåêòðîííèé íàï³âïðîâ³äíèê, íàï³âïðîâ³äíèê (ç åëåêòðîïðîâ³äí³ñòþ) nòèïó elemental ~ ïðîñòèé íàï³âïðîâ³äíèê
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extrinsic ~ äîì³øêîâèé íàï³âïðîâ³äíèê fused ~ ñïëàâíèé íàï³âïðîâ³äíèêîâèé ïðèëàä graded-gap ~ íàï³âïðîâ³äíèê ç ïëàâíîçì³ííîþ øèðèíîþ çàáîðîíåíî¿ çîíè, group III-V ~ íàï³âïðîâ³äíèê òèïó AIIIBV high-mobility ~ íàï³âïðîâ³äíèê ç âèñîêîþ ðóõëèâ³ñòþ íîñ³¿â high-ohmic ~ âèñîêîîìíèé íàï³âïðîâ³äíèê hole ~ ä³ð÷àñòèé íàï³âïðîâ³äíèê, íàï³âïðîâ³äíèê (ç åëåêòðîïðîâ³äí³ñòþ) ðòèïó impurity ~ äîì³øêîâèé íàï³âïðîâ³äíèê indirect-gap ~ íàï³âïðîâ³äíèê ç íåïðÿìèìè ïåðåõîäàìè intrinsic ~ âëàñíèé íàï³âïðîâ³äíèê large-gap ~ íàï³âïðîâ³äíèê ç øèðîêîþ çàáîðîíåíîþ çîíîþ leadless ~ áåçâ³â³äíèé íàï³âïðîâ³äíèêîâèé ïðèëàä low-bandgap ~ íàï³âïðîâ³äíèê ç âóçüêîþ çàáîðîíåíîþ çîíîþ low-mobility ~ íàï³âïðîâ³äíèê ç íèçüêîþ ðóõëèâ³ñòþ íîñ³¿â low-ohmic [low-resistance] ~ íèçüêîîìíèé íàï³âïðîâ³äíèê microwave ~ íàï³âïðîâ³äíèêîâèé ïðèëàä ÍÂ×-ä³àïàçîíó narrow-bandgap ~ íàï³âïðîâ³äíèê ç âóçüêîþ çàáîðîíåíîþ çîíîþ neutron (transmutation) doped ~ íåéòðîííî-ëåãîâàíèé íàï³âïðîâ³äíèê nondegenerate ~ íåâèðîäæåíèé íàï³âïðîâ³äíèê n-type ~ íàï³âïðîâ³äíèê (ç åëåêòðîïðîâ³äí³ñòþ) n-òèïó, åëåêòðîííèé íàï³âïðîâ³äíèê optoelectronic ~ îïòîåëåêòðîííèé íàï³âïðîâ³äíèêîâèé ïðèëàä organo-metallic ~ ìåòàëîîðãàí³÷íèé íàï³âïðîâ³äíèê power ~ ìîãóòí³é íàï³âïðîâ³äíèêîâèé ïðèëàä p-type ~ íàï³âïðîâ³äíèê (ç åëåêòðîïðîâ³äí³ñòþ) ð-òèïó, ä³ð÷àñòèé íàï³âïðîâ³äíèê resin-mold ~ íàï³âïðîâ³äíèêîâèé ïðèëàä â ïðåñîâàíîìó ïëàñòìàñîâîìó êîðïóñ³ small-gap ~ íàï³âïðîâ³äíèê ç âóçüêîþ çàáîðîíåíîþ çîíîþ
seq stoichiometric ~ íàï³âïðîâ³äíèê ³ç Hall(-åffect)~ äàò÷èê Õîëëà; ïåðåòâîðþâà÷ ñòåõ³îìåòðè÷íèì ñêëàäîì Õîëëà substrate ~ íàï³âïðîâ³äíèêîâà ï³äêëàäêà image ~ ôîðìóâà÷ â³äåîñèãíàë³â, ôîðìóâà÷ synthetic ~ ñèíòåòè÷íèé íàï³âïðîâ³äíèê (ñèãíàë³â) çîáðàæåíü (íàïð. íàäãðàòêà) light ~ ôîòîïðèéìà÷ two-valley ~ äâîõäîëèííèé íàï³âïðîâ³äíèê line-image ~ ë³í³éíèé ôîðìóâà÷ wide-bandgap ~ íàï³âïðîâ³äíèê ç øèðîêîþ â³äåîñèãíàë³â çàáîðîíåíîþ çîíîþ magnetic-bubble domain ~ äåòåêòîð ç ÖÌÄ zink-blende ~ íàï³âïðîâ³äíèê ³ç ñòðóêòóðîþ mark ~ ïðèñòð³é äëÿ ïðî÷èòóâàííÿ ñôàëåð³òó ìàðê³ðîâêè II-VI compound ~ íàï³âïðîâ³äíèêîâå non-contact gap ~ áåçêîíòàêòíèé äàò÷èê II VI ñïîëóêà òèïó A B âåëè÷èíè (ì³êðî) çàçîðà (íàïð. ó semicustom 1. íàï³âçàìîâëåíà ²Ñ 2. ôîòîë³òîãðàô³¿ ³ç çàçîðîì) íàï³âçàìîâëåíèé optoelectronic ~ 1. îïòîåëåêòðîííèé âèì³ðþâàëüíèé ïåðåòâîðþâà÷, master slice ~ íàï³âçàìîâëåíà ²Ñ íà îñíîâ³ áàçîâîãî ìàòðè÷íîãî êðèñòàëà îïòîåëåêòðîííèé äàò÷èê 2. ôîòîïðèéìà÷ semispecialized íàï³âçàìîâëåíèé polychromatic image ~ ôîðìóâà÷ sense ïðî÷èòóâàííÿ | ïðî÷èòóâàòè, ç÷èòóâàòè áàãàòîêîë³ðíèõ â³äåîñèãíàë³â sensibility ÷óòëèâ³ñòü semiconductor ~ íàï³âïðîâ³äíèêîâèé âèì³ðþâàëüíèé ïåðåòâîðþâà÷, sensing: íàï³âïðîâ³äíèêîâèé äàò÷èê image ~ ïðî÷èòóâàííÿ çîáðàæåííÿ nondestructive edge ~ áåçêîíòàêòíå solid-state ~ òâåðäîò³ëüíèé âèì³ðþâàëüíèé ïåðåòâîðþâà÷, òâåðäîò³ëüíèé äàò÷èê; âèçíà÷åííÿ îð³ºíòàö³¿ êðàþ (íàïð. êðèñòàëà) íàï³âïðîâ³äíèêîâèé âèì³ðþâàëüíèé sensitivity: ïåðåòâîðþâà÷, íàï³âïðîâ³äíèêîâèé äàò÷èê alpha ~ ÷óòëèâ³ñòü äî àëüôàwire feed ~ äàò÷èê äëÿ êîíòðîëþ ïîäà÷³ âèïðîì³íþâàííÿ äðîòó (íàïð. â óñòàíîâö³ òåðìîêîìïðåñ³¿) instruction ~ ñïðèéíÿòëèâ³ñòü äî êîìàíäè (äåôåêò â ïðîöåñîðí³é Â²Ñ íà ÌÎÍ- separation: òðàíçèñòîðàõ, îáóìîâëåíèé âèòîêîì çàðÿäó) die ~ ðîçä³ëåííÿ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè íà êðèñòàëè process ~ ÷óòëèâ³ñòü òåõíîëîã³÷íîãî vertical ~ âåðòèêàëüíå ðîçä³ëåííÿ, ïðîöåñó (äî ïàðàìåòð³â ïðîâåäåííÿ ïðîöåñó) ðîçä³ëåííÿ ó âåðòèêàëüí³é ïëîùèí³ (íàïð. radiation ~ ÷óòëèâ³ñòü äî ðàä³àö³¿ åì³òåðíîãî ³ áàçîâîãî êîíòàêò³â refresh ~ ÷óòëèâ³ñòü äî ïåðåçàïèñó òðàíçèñòîðà) soft-error ~ ÷óòëèâ³ñòü äî âèïàäêîâèõ çáî¿â sequence: sensitization 1. ñåíñèá³ë³çàö³ÿ 2. àêòèâàö³ÿ block check ~ ïîñë³äîâí³ñòü ïåðåâ³ðêè øëÿõó (ïðè ëîã³÷íîìó ìîäåëþâàíí³ Â²Ñ) áëîêó (ïðè òåñòóâàíí³ Â²Ñ) IC linear path ~ àêòèâ³çàö³ÿ îäíîâèì³ðíîãî fabrication ~ ïîñë³äîâí³ñòü òåõíîëîã³÷íèõ øëÿõó îïåðàö³é âèãîòîâëåííÿ ²Ñ input pattern ~ âõ³äíà ïîñë³äîâí³ñòü multiple path ~ àêòèâ³çàö³ÿ áàãàòîâèì³ðíîãî øëÿõó ñèãíàë³â one-dimensional [single-path] ~ àêòèâ³çàö³ÿ input vector ~ âõ³äíà âåêòîðíà îäíîâèì³ðíîãî øëÿõó ïîñë³äîâí³ñòü sensitizer: logic ~ ïîñë³äîâí³ñòü ëîã³÷íèõ îïåðàö³é path ~ çàñ³á àêòèâ³çàö³¿ øëÿõ³â (â prefix test ~ ïîïåðåäíÿ òåñòîâà àëãîðèòìàõ ñèíòåçó òåñò³â ²Ñ) ïîñë³äîâí³ñòü sensor 1. âèì³ðþâàëüíèé ïåðåòâîðþâà÷, probing ~ ïîñë³äîâí³ñòü òî÷îê óñòàíîâêè çîíäà íà êðèñòàë³ äàò÷èê 2. ïåðåòâîðþâà÷ array ~ ìàòðè÷íèé äàò÷èê process ~ ïîñë³äîâí³ñòü òåõíîëîã³÷íèõ îïåðàö³é
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sic test ~ òåñòîâà ïîñë³äîâí³ñòü sequencer 1. óñòàíîâêà äëÿ ïðîãðàìîâàíî¿ âêëåéêè êîìïîíåíò³â â ñòð³÷êó 2. ïðèñòð³é çàäàííÿ ïîñë³äîâíîñò³ automatic ~ àâòîìàòè÷íà óñòàíîâêà äëÿ ïðîãðàìîâàíî¿ âêëåéêè êîìïîíåíò³â â ñòð³÷êó field-programmable logic ~ Â²Ñ ïðèñòðîþ çàäàííÿ ïîñë³äîâíî ñò³, ïðîãðàìîâàíà êîðèñòóâà÷åì sequencing 1. ïðîãðàìîâàíà âêëåéêà êîìïîíåíò³â â ñòð³÷êó 2. çàäàííÿ ïîñë³äîâíîñò³ series: electrical ~ ïîñë³äîâíå åëåêòðè÷íå ç’ºäíàííÿ high-speed ~ ñåð³ÿ øâèäêîä³éíèõ ²Ñ low-power ~ ñåð³ÿ ìàëîïîòóæíèõ ²Ñ serigraphy òðàôàðåòíèé äðóê, ñ³òêîãðàô³ÿ set: ~ fault symptoms íàá³ð îçíàê íåñïðàâíîñò³ automatic checkout ~ àâòîìàòè÷íà àïàðàòóðà êîíòðîëþ chip ~ êîìïëåêò [íàá³ð] ²Ñ closed ~ çàìêíóòà áåçë³÷ directed ~ îð³ºíòîâàíà ìíîæèíà finite ~ ê³íöåâà áåçë³÷ microprocessor (chip) ~ ì³êðîïðîöåñîðíèé êîìïëåêò multiple chip ~ êîìïëåêò [íàá³ð] ç âåëèêîãî ÷èñëà ²Ñ tool ~ êîìïëåêò ïðèñòîñóâàíü well-ordered ~ ñòðîãîâïîðÿäêîâàíà ìíîæèíà settability òî÷í³ñòü ðåãóëþâàííÿ; òî÷í³ñòü óñòàíîâêè (ïîêàç³â ïðèëàäó) setting: photomask ~ óñòàíîâêà ôîòîøàáëîíó setup 1. óñòàíîâêà; çá³ðêà; ìîíòàæ 2. óñòàíîâêà; ïðèñòð³é ion-beam lithography ~ óñòàíîâêà ³îííîïðîìåíåâî¿ ë³òîãðàô³¿ quick ~ øâèäêà íàëàäêà; øâèäêà ï³äãîòîâêà (óñòàòêóâàííÿ äî ðîáîòè) shadowing 1. çàò³íþâàííÿ; åêðàíóâàííÿ 2. ìàñêóâàííÿ sidewall ~ çàò³íþâàííÿ á³÷íèìè ñò³íêàìè (íàïð. îòâîðè ïðè îñàäæåíí³ â íüîãî ìàòåð³àëó) shape ôîðìà; êîíô³ãóðàö³ÿ | ôîðìóâàòè;
ïðîô³ëþâàòè groove ~ ïðîô³ëü êàíàâêè shaping ôîðìîóòâîðåííÿ; ïðîô³ë³çàö³ÿ sharpness: image ~ ÷³òê³ñòü [ð³çê³ñòü] çîáðàæåííÿ marginal ~ ÷³òê³ñòü [ð³çê³ñòü] êðà¿â çîáðàæåííÿ sheath: electrode ~ ïðèåëåêòðîäíà îáëàñòü (ïðîñòîðîâîãî çàðÿäó ïëàçìè) sheet 1. ïëàñòèíà; øàð 2. ïëàòà 3. êàðòà; ä³àãðàìà drafting ~ ïë³âêà äëÿ âèãîòîâëåííÿ òîïîëîã³÷íîãî êðåñëåííÿ flow ~ òåõíîëîã³÷íà êàðòà shell: electron ~ åëåêòðîííà îáîëîíêà shield 1. (çàõèñíèé) åêðàí | åêðàíóâàòè 2. ìàñêà | ìàñêóâàòè capture ~ åêðàí-ïàñòêà (íàïð. äëÿ åëåêòðîí³â) shielding 1. åêðàíóâàííÿ 2. ìàñêóâàííÿ photoresist ~ ôîòîðåçèñòíå ìàñêóâàííÿ shift çì³ùåííÿ, çì³ùåííÿ | çñîâóâàòè; çì³ùóâàòè logical ~ ëîã³÷íèé çì³ùåííÿ phase ~ ôàçîâèé çì³ùåííÿ shifter çñóâíèé ðåã³ñòð; çñóâíèé ïðèñòð³é (äèâ. ò-æ register) multibit ~ áàãàòîðîçðÿäíèé çñóâíèé ðåã³ñòð phase ~ ôàçîïîâåðòà÷ short êîðîòêå çàìèêàííÿ edge ~ êîðîòêå çàìèêàííÿ íà êðàÿõ (íàïð. ä³åëåêòðèêà çàòâîðà ) integral ~ ³íòåãðàëüíà çàêîðî÷óþ÷à (çàìèêàþ÷à) ïåðåìè÷êà ohmic ~ îì³÷íà çàêîðî÷óþ÷à (çàìèêàþ÷à) ïåðåìè÷êà short-circuit êîðîòêå çàìèêàííÿ | çàêîðî÷óâàòè, çàìèêàòè shrinkage 1. óñàäêà 2. ìàñøòàáóâàííÿ, ïðîïîðö³éíå çìåíøåííÿ ðîçì³ð³â (åëåìåíò³â ²Ñ) (äèâ. ò-æ scaling) shutter çàòâîð; çàñë³íêà; øòîðêà shuttering (ïåð³îäè÷íå) ïåðåðèâàííÿ (ïðîöåñó) sialon ñ³àëîí (òâåðäèé ðîç÷èí â – SiN ³ Al2O3) sickness:
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sil sleeping ~ «ñîííà õâîðîáà» (äåôåêò â ÌÎÍ self-aligned ~ ñàìîñóì³ùåíèé ñèë³öèäíèé Â²Ñ ÇÏ, ïîâ’ÿçàíèé ç âòðàòîþ ³íôîðìàö³¿ â çàòâîð êîì³ðö³ äî ìîìåíòó ðåãåíåðàö³¿) tantalum ~ ñèë³öèä òàíòàëó, TaSi2 side: silicon êðåìí³é, Si component ~ ñòîðîíà ìîíòàæó (äðóêîâàíî¿ bare ~ êðåìí³é ç â³äêðèòîþ ïîâåðõíåþ (áåç ïëàòè) çàõèñíîãî îêñèäíîãî øàðó) sidewalk base ~ á³÷íà ñò³íêà áàçè black ~ ÷îðíèé êðåìí³é (îïòè÷íèé åôåêò signal ñèãíàë òåìíîãî êðåìí³þ íà äí³ âèòðàâëåíèõ amplitude-modulated ~ àìïë³òóäíîêàíàâîê) ìîäóëüîâàíèé ñèãíàë boron-implanted ~ êðåìí³é ç analog ~ àíàëîãîâèé ñèãíàë ³ìïëàíòîâàíèìè ³îíàìè áîðó clock ~ ñèíõðîí³çóþ÷èé ñèãíàë, bulk ~ îá’ºìíèé êðåìí³é (ñòîñîâíî êðåìí³ºâî¿ ï³äêëàäêè áåç åï³òàêñ³àëüíîãî ñèíõðîñèãíàë; òàêòîâèé ñèãíàë control ~ ñèãíàë óïðàâë³ííÿ, óïðàâëÿþ÷èé øàðó) ñèãíàë capped ~ êðåìí³ºâà ï³äêëàäêà ç ïîêðèòòÿì digital ~ öèôðîâèé ñèãíàë counterdoped ~ êðåìí³é ç ëåãóâàííÿì, ùî êîìïåíñóºòüñÿ distirb ~ ïîðóøóþ÷èé ñèãíàë; ñèãíàë CVD ~ øàð êðåìí³þ, îäåðæàíèé ìåòîäîì ïåðåøêîäè frequency-modulated ~ ÷àñòîòíîõ³ì³÷íîãî îñàäæåííÿ ç ïàðîâî¿ ôàçè CZ [Czochralski] ~ êðåìí³é, îäåðæàíèé ìîäóëüîâàíèé ñèãíàë gate ~ ñåëåêòîðíèé [ñòðîáóþ÷èé] ñèãíàë ìåòîäîì ×îõðàëüñüêîãî line conditioning ~s ñèãíàëè óïðàâë³ííÿ doped ~ ëåãîâàíèé êðåìí³é electron-irradiated ~ êðåìí³é, ï³ääàíèé ñòàíîì êàíàë³â åëåêòðîííî-ïðîìåíåâ³é îáðîáö³ line-out-of-service ~ ñèãíàë, ùî îïîâ³ùຠepitaxial ~ åï³òàêñ³àëüíèé êðåìí³é ïðî âèõ³ä êàíàëó ç ëàäó float(ing)-zone [FZ] ~ êðåìí³é, îäåðæàíèé link inhibit ~ ñèãíàë áëîêóâàííÿ êàíàëó ìåòîäîì çîííî¿ ïëàâêè naught ~ ñèãíàë «0» germanium hardened ~ êðåìí³é, çì³öíåíèé one ~ ñèãíàë «1» pulse ~ ³ìïóëüñíèé ñèãíàë ãåðìàí³ºì glow-discharge ~ (àìîðôíèé) êðåìí³é, reading ~ ñèãíàë ïðî÷èòóâàííÿ îäåðæàíèé â òë³þ÷îìó ðîçðÿä³ refresh ~ ðåãåíåðóþ÷èé ñèãíàë trigger(ing)~ ïóñêîâèé ñèãíàë high-resistivity ~ êðåìí³é ç âèñîêèì write ~ ñèãíàë çàïèñó ïèòîìèì îïîðîì zero ~ ñèãíàë «0» hydrogenated amorphous ~ silane ñèëàí, SiH4 ã³äðîãåí³çîâàíèé àìîðôíèé êðåìí³é silica ä³îêñèä êðåìí³þ, SiO2 implantation-amorphised ~ êðåìí³é, dissolved ~ ðîç÷èííå ñêëî ïåðåòâîðåíèé íà àìîðôíèé ñòàí ï³ä 䳺þ fused ~ ïëàâëåíèé êâàðö, êâàðöîâå ñêëî ³îííî¿ ³ìïëàíòàö³¿ hydrophobic ~ ãèäðîôîáíèé ä³îêñèä ion-implanted ~ ³îííî-³ìïëàíòîâàíèé êðåìí³þ êðåìí³é silicidation ñèë³öèäóâàííÿ, ôîðìóâàííÿ microcrystalline ~ ïîë³êðèñòàë³÷íèé ñèë³öèä³â êðåìí³é silicide ñèë³öèä native ~ âèõ³äíèé êðåìí³é direct-reacted ~ ñèë³öèä, îäåðæàíèé n+ diffused ~ êðåìí³ºâà äèôóçíà îáëàñòü n+áåçïîñåðåäíüîþ ðåàêö³ºþ ì³æ ìåòàëîì ³ òèïó êðåìí³ºì neutron-doped ~ íåéòðîííî-ëåãîâàíèé ion-induced ~ ³îííî-³íäóêîâàíèé ñèë³öèä êðåìí³é metal ~ ñèë³öèä semiconductor-grade ~ êðåìí³é platinum ~ ñèë³öèä ïëàòèíè, PtSi íàï³âïðîâ³äíèêîâî¿ ÷èñòîòè refractory ~s ñèë³öèäè òóãîïëàâêèõ ìåòàë³â silicided ~ êðåìí³é ç øàðîì ñèë³öèäó
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sim single-crystal ~ ìîíîêðèñòàë³÷íèé êðåìí³é hardware ~ ìîäåëþâàííÿ çà äîïîìîãîþ zero-defect ~ áåçäåôåêòíèé êðåìí³é àïàðàòíèõ çàñîá³â 111 ~ êðåìí³é, îð³ºíòîâàíèé â logic ~ ëîã³÷íå ìîäåëþâàííÿ êðèñòàëîãðàô³÷í³é ïëîùèí³ 111 mini-max delay ~ ³íòåðâàëüíå ìîäåëþâàííÿ silicon CZ100 çëèòîê êðåìí³þ ç îð³ºíòàö³ºþ mixed-mode ~ çì³øàíå ìîäåëþâàííÿ 100, âèðîùåíèé ïî ìåòîäó ×îõðàëüñüêîãî Monte-Carlo ~ ìîäåëþâàííÿ ìåòîäîì silicone êðåìí³éîðãàí³÷íà ñïîëóêà Ìîíòå-Êàðëî multidimensional ~ áàãàòîâèì³ðíå silicon-on-insulator ñòðóêòóðà òèïó «êðåìí³é íà ä³åëåêòðèö³», ÊÍÄ-ñòðóêòóðà ìîäåëþâàííÿ laser-processed ~ ÊÍÄ-ñòðóêòóðà, îäåðæàíà multilevel ~ áàãàòîð³âíåâå ìîäåëþâàííÿ ëàçåðíîþ îáðîáêîþ multipass ~ áàãàòîïðîõ³äíå ìîäåëþâàííÿ laser-recrystallized ~ ÊÍÄ-ñòðóêòóðà, multivalued ~ áàãàòîçíà÷íå ìîäåëþâàííÿ next critical event ~ ìîäåëþâàííÿ ïî îäåðæàíà ëàçåðíîþ ðåêðèñòàë³çàö³ºþ íàñòóïí³é êðèòè÷í³é ïî䳿 silicon-on-sapphire ñòðóêòóðà òèïó «êðåìí³é one-dimensional ~ îäíîâèì³ðíå íà ñàïô³ð³», ÊÍÑ-ñòðóêòóðà laser-annealed ~ ÊÍÑ-ñòðóêòóðà, ï³ääàíà ìîäåëþâàííÿ ëàçåðíîìó â³äïàëó one-pass ~ îäíîïðîõ³äíå ìîäåëþâàííÿ silk-screening òðàôàðåòíèé äðóê, ñ³òêîãðàô³ÿ parallel fault ~ ïàðàëåëüíå ìîäåëþâàííÿ silox ä³îêñèä êðåìí³þ, SiO2 íåñïðàâíîñòåé performance ~ ìîäåëþâàííÿ ïðîåêòó Â²Ñ ç heavily-doped ~ ñèëüíîëåãîâàíèé ä³îêñèä ìåòîþ àíàë³çó ê³ëüê³ñíèõ ïîêàçíèê³â êðåìí³þ simulation 1. (³ì³òàö³éíå) ìîäåëþâàííÿ, photoresist image ~ ìîäåëþâàííÿ ìàëþíêà ñèìóëÿö³ÿ 2. ³ì³òàö³ÿ [çîáðàæåííÿ] â øàð³ ôîòîðåçèñòà real-time ~ ìîäåëþâàííÿ â ðåàëüíîìó ÷àñ³ activity-directed ~ ïî䳺âå ìîäåëþâàííÿ backward ~ çâîðîòíå ìîäåëþâàííÿ register-transfer level ~ ìîäåëþâàííÿ íà ð³âí³ ðåã³ñòðîâèõ ïåðåäà÷ behavioral ~ ìîäåëþâàííÿ íà serial fault ~ ïîñë³äîâíå ìîäåëþâàííÿ ïîâåä³íêîâîìó ð³âí³, ïîâåä³íêîâå íåñïðàâíîñòåé ìîäåëþâàííÿ computer ~ ìîäåëþâàííÿ íà ÅÎÌ, ìàøèííå statistical fault ~ ñòàòèñòè÷íå ìîäåëþâàííÿ ìîäåëþâàííÿ íåñïðàâíîñòåé concurrent fault ~ ïàðàëåëüíå ìîäåëþâàííÿ system ~ ìîäåëþâàííÿ íà ð³âí³ ñèñòåì íåñïðàâíîñòåé three valued logic ~ ìîäåëþâàííÿ íà deductwe fault ~ ìîäåëþâàííÿ ëîã³÷íîìó ð³âí³ ³ç çàëó÷åííÿì òðèçíà÷íî¿ íåñïðàâíîñòåé ç âèêîðèñòàííÿì ëîã³êè (0,1,Õ) äåäóêòèâíîãî àëãîðèòìó time-domain ~ ìîäåëþâàííÿ â òèì÷àñîâ³é design verification ~ ìîäåëþâàííÿ îáëàñò³ âåðèô³êàö³¿ ïðîåêòó Â²Ñ timing ~ òèì÷àñîâå ìîäåëþâàííÿ event-driven logic ~ ïî䳺âå ëîã³÷íå transistor-level ~ ìîäåëþâàííÿ íà ð³âí³ ìîäåëþâàííÿ òðàíçèñòîð³â fail-all fault ~ ìîäåëþâàííÿ âñ³õ ìîæëèâèõ two-dimensional device ~ äâîâèì³ðíå íåñïðàâíîñòåé Â²Ñ ìîäåëþâàííÿ òðàíçèñòîð³â fault ~ ³ì³òàö³éíå ìîäåëþâàííÿ worst-case timing ~ òèì÷àñîâå ìîäåëþâàííÿ íåñïðàâíîñòåé íà ÿêíàéã³ðøèé âèïàäîê functional(-level)~ ìîäåëþâàííÿ íà simulator 1. ìîäåëþþ÷à ñèñòåìà; ìîäåëþþ÷å ôóíêö³îíàëüíîìó ð³âí³ ïðèñòð³é 2. ³ì³òàòîð 3. ïðîãðàìà gate-level ~ ìîäåëþâàííÿ íà ð³âí³ ëîã³÷íèõ (³ì³òàö³éíîãî) ìîäåëþâàííÿ, ñèìóëÿòîð åëåìåíò³â event-driven ~ ïðîãðàìà ïî䳺âîãî general-circuit [general-purpose] ~ ìîäåëþâàííÿ ìîäåëþâàííÿ íà ð³âí³ ñõåì, ìîäåëþâàííÿ fault ~ ïðîãðàìà ìîäåëþâàííÿ ñõåìîòåõí³êè íåñïðàâíîñòåé (²Ñ)
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sla functional-level ~ ïðîãðàìà ìîäåëþâàííÿ íà ôóíêö³îíàëüíîìó ð³âí³ gate-level ~ ïðîãðàìà ìîäåëþâàííÿ íà ð³âí³ ëîã³÷íèõ åëåìåíò³â general-circuit ~ ïðîãðàìà ìîäåëþâàííÿ íà ð³âí³ ñõåìîòåõí³êè general-purpose logic ~ óí³âåðñàëüíà ïðîãðàìà ëîã³÷íîãî ìîäåëþâàííÿ high-level ~ ïðîãðàìà ìîäåëþâàííÿ íà âèñîêîìó ð³âí³ ïðåäñòàâëåííÿ Â²Ñ interactive logic ~ ïðîãðàìà ³íòåðàêòèâíîãî ëîã³÷íîãî ìîäåëþâàííÿ load representation ~ ³ì³òàòîð íàâàíòàæåííÿ mixed-mode ~ ïðîãðàìà çì³øàíîãî ìîäåëþâàííÿ multilevel ~ ïðîãðàìà áàãàòîð³âíåâîãî ìîäåëþâàííÿ multipass ~ ïðîãðàìà áàãàòîïðîõ³äíîãî ìîäåëþâàííÿ off-line operating ~ àâòîíîìíèé ³ì³òàòîð one-pass ~ ïðîãðàìà îäíîïåðåõ³äíîãî ìîäåëþâàííÿ register-transfer level ~ ïðîãðàìà ìîäåëþâàííÿ íà ð³âí³ ðåã³ñòðîâèõ ïåðåäà÷ software ~ ïðîãðàìà ìîäåëþâàííÿ ìàòåìàòè÷íîãî çàáåçïå÷åííÿ table-driven ~ ïðîãðàìà òàáëè÷íîãî ïîøóêó three-dimensional ~ ïðîãðàìà òðèâèì³ðíîãî ìîäåëþâàííÿ three-state ~ ïðîãðàìà òð³éêîâîãî ìîäåëþâàííÿ unit delay ~ ëîã³÷íèé àíàë³çàòîð ç îäèíè÷íîþ çàòðèìêîþ zero delay ~ ëîã³÷íèé àíàë³çàòîð ç íóëüîâîþ çàòðèìêîþ single-crystal ìîíîêðèñòàë | ìîíîêðèñòàë³÷íèé silicon ~ êðåìí³ºâèé ìîíîêðèñòàë singulate 1. ðîçì³ùóâàòè (íàïð. ²Ñ íà ïëàò³) â ïåâí³é ïîñë³äîâíîñò³ 2. ðîçä³ëÿòè (íàïð. ôîðìîâàí³ êîðïóñè) 3. çàõîïëþâàòè (íàïð. ²Ñ ç ìàãàçèíà) singulation: substrate ~ çàõîïëåííÿ ï³äêëàäêè (ç êàñåòè) sink 1. ðàä³àòîð; òåïëîâ³äâ³ä 2. ñò³ê bar beat ~ ïëàñòèí÷àñòèé òåïëî-â³äâåäåííÿ blower-forced-cooled heat ~ òåïëîâ³äâ³ä ç ïðèìóñîâèì ïîâ³òðÿíèì îõîëîäæóâàííÿì electron ~ ñò³ê åëåêòðîí³â
fanned heat ~ ðåáðèñòèé òåïëî-â³äâåäåííÿ, òåïëîâ³äâ³ä ç ðàä³àòîðàìè integrated heat ~ ³íòåãðàëüíèé òåïëîâ³äâ³ä sinter ñï³êàòè à to ~-alloy ñï³êàòè ³ç ñïëàâîì sinterability ñïåêàåìîñòú, çäàòí³ñòü äî ñï³êàííÿ sintering ñï³êàííÿ SIT ñòàòè÷íèé ³íäóêö³éíèé òðàíçèñòîð, Ñ²Ò (ïîëüîâèé òðàíçèñòîð ç ð–n-ïåðåõîäîì ³ âåðòèêàëüíèì êàíàëîì) microwave ~ ñòàòè÷íèé ³íäóêö³éíèé òðàíçèñòîð ÍÂ×-ä³àïàçîíó multipurpose ~ ñòàòè÷íèé ³íäóêö³éíèé òðàíçèñòîð øèðîêîãî âæèâàííÿ n-channel ~ n-êàíàëüíûé ñòàòè÷íèé ³íäóêö³éíèé òðàíçèñòîð surface-gate (structure) ~ ñòàòè÷íèé ³íäóêö³éíèé òðàíçèñòîð ç ïîâåðõíåâèì çàòâîðîì site 1. ä³ëÿíêà; ìàéäàí÷èê 2. ïàñòêà, öåíòð çàõîïëåííÿ bond (ing) ~ êîíòàêòíèé ìàéäàí÷èê injection ~ ³íæåêö³éíà ä³ëÿíêà interstitial ~ ì³æâóçëîâèíà lattice ~ âóçîë êðèñòàë³÷íèõ ãðàòîê manufacturing ~ âèðîáíè÷à ä³ëÿíêà vacancy ~ âàêàíñ³ÿ size ðîçì³ð; âåëè÷èíà chip ~ ðîçì³ð êðèñòàëà fatal defect ~ ðîçì³ð äåôåêòó, ùî âèêëèêຠêàòàñòðîô³÷íó â³äìîâó ïðèëàäó feature ~ 1. (òîïîëîã³÷íèé) ðîçì³ð åëåìåíòó (²Ñ) 2. ðîçì³ð, ùî õàðàêòåðèçóº ïðèëàä (íàïð. äîâæèíà êàíàëó â ïîëüîâîìó òðàíçèñòîð³) field ~ ðîçì³ð ïîëÿ çîáðàæåííÿ grit ~ ðîçì³ð çåðíà (íàïð. â ñóñïåí糿) image ~ ðîçì³ð çîáðàæåííÿ; ïîëå ìîäóëÿ (íà ôîòîøàáëîí³) memory ~ ì³ñòê³ñòü ïàì’ÿò³ mesh ~ ðîçì³ð êîì³ðêè ñèòà, íîìåð ñèòà scale ~ ìàñøòàáíèé êîåô³ö³ºíò, êîåô³ö³ºíò ìàñøòàáóâàííÿ screen ~ ðîçì³ð êîì³ðêè â äðîòÿíîìó òðàôàðåò³ yieldable chip ~ ðîçì³ð êðèñòàëà, ùî çàáåçïå÷óº âèñîêèé â³äñîòîê âèõîäó ãîäíèõ slab: silicon ~ êðåìí³ºâà ïëàñòèíà slag:
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sol laser scribing ~ øëàê, ùî óòâîðèâñÿ ïðè ëàçåðíîìó ñêðàéáóâàíí³ (íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) slice 1. íàï³âïðîâ³äíèêîâà ïëàñòèíà | ðîçð³çàòè íàï³âïðîâ³äíèêîâ³ çëèòêè íà ïëàñòèíè 2. êðèñòàë ²Ñ 3. ñåêö³îíîâàíèé ì³êðîïðîöåñîð; ðîçðÿäíà ñåêö³ÿ (â ñåêö³îíîâàíèõ ì³êðîïðîöåñîðàõ) bit ~ ñåêö³îíîâàíèé ì³êðîïðîöåñîð; ðîçðÿäíà ñåêö³ÿ CMOS master ~ 1. íàï³âïðîâ³äíèêîâà ïëàñòèíà ç ÊÌÎÍ-áàçîâèìè ìàòðè÷íèìè êðèñòàëàìè 2. ÊÌÎÍ-áàçîâèé ìàòðè÷íèé êðèñòàë edge(-shaped)~ êðåìí³ºâà ïëàñòèíà ³ç çàêðóãëþþ÷èìè êðàÿìè I 2L ~ ñåêö³îíîâàíèé ì³êðîïðîöåñîð íà åëåìåíòàõ ²2Ë master ~ 1. íàï³âïðîâ³äíèêîâà ïëàñòèíà ç áàçîâèìè ìàòðè÷íèìè êðèñòàëàìè 2. áàçîâèé ìàòðè÷íèé êðèñòàë, ÁÌÊ microprocessor ~ ñåêö³îíîâàíèé ì³êðîïðîöåñîð prediffused (wafer) ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç áàçîâèìè ìàòðè÷íèìè êðèñòàëàìè scored ~ ñêðàéáîâàíà íàï³âïðîâ³äíèêîâà ïëàñòèíà starting silicon ~ âèõ³äíà êðåìí³ºâà ïëàñòèíà substrate ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ÿê ï³äêëàäêà (äëÿ âèðîùóâàííÿ åï³òàêñ³àëüíîãî øàðó) siice-al-à-time ïîñë³äîâíà îáðîáêà íàï³âïðîâ³äíèêîâèõ ïëàñòèí (íà â³äì³íó â³ä ãðóïîâî¿ îáðîáêè) slicer óñòàíîâêà äëÿ ð³çàííÿ íàï³âïðîâ³äíèêîâèõ çëèòê³â íà ïëàñòèíè longitudinal ~ óñòàíîâêà äëÿ ð³çàííÿ íàï³âïðîâ³äíèêîâèõ çëèòê³â óçäîâæ ïîäîâæíüî¿ îñ³ slicing ð³çàííÿ íàï³âïðîâ³äíèêîâèõ çëèòê³â íà ïëàñòèíè slope 1. íàõèë; òàíãåíñ êóòà íàõèëó 2. êðóòèçíà (õàðàêòåðèñòèêè) slot 1. ù³ëèíà; êàíàâêà; âèð³ç 2. îòâ³ð submicron ~ ù³ëèíà ñóáì³êðîííî¿ øèðèíè slurry ñóñïåíç³ÿ alumina ~ ñóñïåíç³ÿ îêñèäó àëþì³í³þ smear 1. ïëÿìà (çàáðóäíåííÿ) 2. ðîçìèâàííÿ
(çîáðàæåííÿ) smoothing: final ~ ô³í³øíà ïîë³ðîâêà (ïîâåðõí³) snowball «ñí³æîê» (ïîâåðõíåâèé äåôåêò íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) soak 1. ïðîñî÷åííÿ, ïðîñî÷åííÿ | ïðîñî÷óâàòè 2. âèòðèìêà, âèòðèìêà | âèòðèìóâàòè (â ðîáî÷îìó ðåæèì³ ïå÷³) heat ~ òåðìîâèòðèìêà high-temperature ~ âèñîêîòåìïåðàòóðíà âèòðèìêà socket 1. ïàíåëüêà, ñóïóòíèê-íîñ³é (äëÿ ²Ñ); ãí³çäî (äèâ. ò-æ receptacle) 2. ðîçåòêà (åëåêòðè÷íîãî ç’ºäíàííÿ) carrier ~ êðèñòàëîíîñ³é, êðèñòàëîòðèìà÷ grid array ~ ïàíåëüêà ç ìàòðè÷íèì ðîçòàøóâàííÿì øòèðüêîâèõ àáî ñòîâï÷èêîâèõ âèâîä³â IC (lead) ~ ïàíåëüêà äëÿ ²Ñ packaging ~ ïàíåëüêà äëÿ ²Ñ â êîðïóñ³ PGA [pin grid array] ~ ïàíåëüêà äëÿ ²Ñ â êîðïóñ³ ç ìàòðè÷íèìè âèâîäàìè pluggable ~ ïàíåëüêà ç øòèðüêîâèìè âèâîäàìè quad-in-line (ðàñkage) [QUIP] ~ ïàíåëüêà äëÿ ²Ñ â ïëîñêîìó êîðïóñ³ ç ÷îòèðèðÿäíèì ðîçòàøóâàííÿì âèâîä³â SIL [single-in-line (ðàñkage)] ~ ïàíåëüêà äëÿ ²Ñ â ïëîñêîìó êîðïóñ³ ç îäíîðÿäíèì ðîçòàøóâàííÿì âèâîä³â wire-wrappable ~ ïàíåëüêà äëÿ ìîíòàæó íàêðóòêîþ zero insertion force ~ â³ëüíà ïàíåëüêà, ùî âñòàâëÿºòüñÿ softbake òåðìîîáðîáêà ïðè íåâèñîê³é òåìïåðàòóð³ software ïðîãðàìíå çàáåçïå÷åííÿ application ~ ïðèêëàäíå ïðîãðàìíå çàáåçïå÷åííÿ bespoke ~ çàìîâëåíå ïðîãðàìíå çàáåçïå÷åííÿ graphic ~ ïðîãðàìíå çàáåçïå÷åííÿ äëÿ âèð³øåííÿ ãðàô³÷íèõ çàäà÷ (ïðîåêòóâàííÿ Â²Ñ íà ïåðñîíàëüíèõ ÅÎÌ) off-the-shelf ~ ñòàíäàðòíå ïðîãðàìíå çàáåçïå÷åííÿ system ~ ñèñòåìíå ïðîãðàìíå çàáåçïå÷åííÿ soil: ionic ~ ³îííå çàáðóäíåííÿ solder 1. ïðèï³é | ïàÿòè 2. ïàéêè (äèâ. ò-æ
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sor soldering) brazing ~ ñåðåäíüîïëàâêèé ïðèï³é ñîðper-loaded ~ ì³äíèé ïðèï³é, ïðèï³é íà îñíîâ³ ì³ä³ eutectic(-temperature)~ åâòåêòè÷íèé ïðèï³é flux-free ~ áåçôëþñîâå ïàÿííÿ hard [high-melting] ~ âèñîêîïëàâêèé ïðèï³é low-melting ~ ëåãêîïëàâêèé ïðèï³é reflowed ~ îïëàâëåíèé ïðèï³é silver ~ ñð³áíèé ïðèï³é, ïðèï³é íà îñíîâ³ ñð³áëà soft ~ ëåãêîïëàâêèé ïðèï³é solderability çä³áí³ñòü äî ïàÿííÿ soldering ïàÿííÿ (äèâ. ò-æ solder) bridge-free (wave) ~ ïàÿííÿ õâèëåþ ïðèïîþ áåç çàìèêàþ÷èõ (çàêîðî÷óþ÷èõ) ïåðåìè÷îê condensation ~ êîíäåíñàö³éíå ïàÿííÿ dip ~ ïàÿííÿ çàíóðåííÿì double-wave ~ ïàÿííÿ ïîäâ³éíîþ õâèëåþ ïðèïîþ flow ~ ïàÿííÿ õâèëåþ ïðèïîþ hard ~ ïàÿííÿ âèñîêîïëàâêèì ïðèïîºì hot belt ~ (êîíòàêòíà) ïàÿííÿ íàãð³òîþ ñòð³÷êîþ hot gas (reflow) ~ ïàÿííÿ îïëàâëåííÿì ïðèïîþ ñòðóìåíåì ãàðÿ÷îãî ãàçó kit ~ ãðóïîâå ïàÿííÿ lambda wave ~ ïàÿííÿ ëÿìáäà-õâèëåþ ïðèïîþ laser-assisted ~ ëàçåðíå ïàÿííÿ mass ~ ãðóïîâå ïàÿííÿ parallel-gap ~ ïàÿííÿ ðîçùåïëåíèì åëåêòðîäîì phase transition ~ ïàÿííÿ ïðèïîºì ç ôàçîâèì ïåðåõîäîì pinpoint ~ òî÷êîâå ïàÿííÿ reflow ~ ïàÿííÿ îïëàâëåííÿì ïðèïîþ resistance ~ ïàÿííÿ åëåêòðîîïîîì soft ~ ïàÿííÿ ëåãêîïëàâêèì ïðèïîºì spot ~ òî÷êîâå ïàÿííÿ ultrasonic ~ óëüòðàçâóêîâå ïàÿííÿ vapor-phase ~ ïàÿííÿ ñòðóìåíåì ãàðÿ÷î¿ ïàðè vapor(-phase) reflow ~ ïàÿííÿ îïëàâëåííÿì ïðèïîþ ñòðóìåíåì ãàðÿ÷î¿ ïàðè wave ~ ïàÿííÿ õâèëåþ ïðèïîþ solder-wrap êîìá³íîâàíèé ìåòîä ïàÿííÿ ³ íàêðóòêè (äëÿ ìîíòàæó êîìïîíåíò³â íà ïëàò³)
solid òâåðäå ò³ëî | òâåðäîò³ëüíèé solidification: directional ~ íàïðàâëåíå çàòâåðä³âàííÿ; íàïðàâëåíà êðèñòàë³çàö³ÿ solid-state òâåðäîò³ëüíèé; íàï³âïðîâ³äíèêîâèé solubility ðîç÷èíí³ñòü solid ~ ðîç÷èíí³ñòü â òâåðä³é ôàç³ solute ðîç÷èíåíà ðå÷îâèíà solution 1. ðîç÷èí 2. ðîç÷èíåííÿ arsenic spin-on ~ ðîç÷èí ìèø’ÿêó, ùî íàíîñèòüñÿ íà ïîâåðõíþ íàï³âïðîâ³äíèêà (äëÿ äèôó糿) buffered etching ~ áóôåðíèé òðàâíèê developing ~ ïðîÿâíèê epitaxial ~ ðîç÷èí äëÿ ð³äèííî¿ åï³òàêñ³¿ etch (ant) ~ òðàâíèê growth ~ ðîç÷èí äëÿ âèðîùóâàííÿ åï³òàêñ³àëüíîãî øàðó precursor ~ ïåðâèííèé [ïî÷àòêîâèé] ðîç÷èí (ùî íàíîñèòüñÿ ïåðåä îñíîâíèì ðîç÷èíîì) silicon etch ~ ð³äêèé òðàâíèê äëÿ êðåìí³þ solid ~ òâåðäèé ðîç÷èí stripping ~ ðîç÷èí äëÿ âèäàëåííÿ ôîòîðåçèñòà wipe ~ ðîç÷èí äëÿ î÷èùåííÿ ïîâåðõí³ (øëÿõîì ðîç÷èíåííÿ ïîâåðõíåâîãî øàðó) solvent ðîç÷èííèê developer ~ ïðîÿâíèê electronic-grade ~ ðîç÷èííèê åëåêòðîííî¿ ÷èñòîòè fluorinated ~ ôòîðóþ÷èé [ôòîðîâì³ñíèé] ðîç÷èííèê hydrocarbon ~ âóãëåâîäíåâèé îðãàí³÷íèé ðîç÷èííèê sonoprobe óëüòðàçâóêîâèé çîíä sort: comparison counting ~ ñîðòóâàííÿ ç ðàõóíêîì (ë³÷áîþ) ïî ïîð³âíÿííþ distribution counting ~ ñîðòóâàííÿ ç ðàõóíêîì (ë³÷áîþ) ïî ðîçì³ùåííþ exchange selection ~ ñîðòóâàííÿ ïðîñòèì îáì³íîì sorter 1. ñîðòóþ÷èé ïðèñòð³é, ñîðòóâàëüíèê 2. êëàñèô³êàòîð (íàïð. íàï³âïðîâ³äíèêîâèõ ïëàñòèí) die ~ óñòàíîâêà äëÿ ïåðåâ³ðêè êðèñòàë³â íà ôóíêö³îíóâàííÿ, ñîðòóâàëüíèê êðèñòàë³â grade ~ 1. ñîðòóþ÷èé ïðèñòð³é, ñîðòóâàëüíèê 2. êëàñèô³êàòîð
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spe thickness/resistivity ~ êëàñèô³êàòîð (íàï³âïðîâ³äíèêîâèõ ïëàñòèí) ïî òîâùèí³ ³ ïèòîìîìó îïîðó sorting 1. ñîðòóâàííÿ 2. êëàñèô³êàö³ÿ (íàïð. íàï³âïðîâ³äíèêîâèõ ïëàñòèí) 3. ðîçáðàêóâàííÿ die ~ ðîçáðàêóâàííÿ êðèñòàë³â (íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³), ïåðåâ³ðêà êðèñòàë³â íà ôóíêö³îíóâàííÿ divide and conquer ~ ñîðòóâàííÿ ç ïîñë³äîâíèì ðîçä³ëåííÿì electrical ~ ðîçáðàêóâàííÿ (²Ñ) ïî åëåêòðè÷íèõ ïàðàìåòðàõ multigrade die ~ 1. ñîðòóâàííÿ êðèñòàë³â ïî äåê³ëüêîõ ãðóïàõ 2. êëàñèô³êàö³ÿ êðèñòàë³â ïî äåê³ëüêîõ ãðóïàõ 3. ðîçáðàêóâàííÿ êðèñòàë³â ïî äåê³ëüêîõ ãðóïàõ source 1. äæåðåëî 2. âèò³ê, âèòîêîâà îáëàñòü (ïîëüîâîãî òðàíçèñòîðà) BN ~ í³òðèä áîðó ÿê äæåðåëî äèôóçàíòà collimated ~ êîë³ìîâàíå äæåðåëî âèïðîì³íþâàííÿ current ~ äæåðåëî ñòðóìó deep-ultraviolet ~ äæåðåëî äàëüíüîãî óëüòðàô³îëåòîâîãî âèïðîì³íþâàííÿ diffusant ~ äæåðåëî äèôóçàíòà diffused ~ äèôóç³éíèé âèò³ê diffusion ~ äæåðåëî äèôóçàíòà discrete ~ äæåðåëî äèñêðåòíî¿ ³íôîðìàö³¿ dopant ~ äæåðåëî (ëåãóþ÷î¿) ïðèì³ñè electron-beam evaporation åëåêòðîííîïðîìåíåâèé âèïàðíèê exposure ~ äæåðåëî åêñïîíóþ÷îãî âèïðîì³íþâàííÿ fanout ~ äæåðåëî ñèãíàëó âóçëà ðîçãàëóæåííÿ high-pressure gas ~ ãàçîâå äæåðåëî âèñîêîãî òèñêó hybrid beam ~ ã³áðèäíå äæåðåëî âèïðîì³íþâàííÿ (íàïð. åëåêòðîí³â ³ ³îí³â) infinite ~ íåîáìåæåíå äæåðåëî äîì³øêè ion-implanted ~ ³îííî-³ìïëàíòîâàíå äæåðåëî laser X-ray ~ ëàçåðíå äæåðåëî ðåíòãåí³âñüêîãî âèïðîì³íþâàííÿ liquid-metal ion ~ ð³äêîìåòàë³÷íå ³îííå äæåðåëî magnetron plasma discharge ~ äæåðåëî ç ïëàçìè ìàãíåòðîíà
ÌÂE-style element ~ äæåðåëî òèïó äæåðåëà â ìîëåêóëÿðíî-ïó÷êîâ³é åï³òàêñ³¿ n-doped ~ âèò³ê (ç åëåêòðîïðîâ³äí³ñòþ) nòèïó oxygen plasma discharge ~ ïëàçìîâå äæåðåëî êèñíþ, äæåðåëî êèñíþ ç êèñíåâî¿ ïëàçìè p-doped ~ âèò³ê (ç åëåêòðîïðîâ³äí³ñòþ) ðòèïó planar ~ ïëîñêå äæåðåëî; îáìåæåíå äæåðåëî äîì³øêè reference (voltage) ~ äæåðåëî îïîðíî¿ íàïðóãè semiconductor ~ íàï³âïðîâ³äíèêîâå äæåðåëî âèïðîì³íþâàííÿ (íàïð. ñâ³òëîä³îä) solid ~ òâåðäå äæåðåëî äîì³øêè sputter(ing)~ äæåðåëî äëÿ ðîçïèëþâàííÿ UV ~ äæåðåëî óëüòðàô³îëåòîâîãî [ÓÔ]âèïðîì³íþâàííÿ voltage ~ äæåðåëî íàïðóãè X-ray ~ äæåðåëî ðåíòãåí³âñüêîãî âèïðîì³íþâàííÿ space ïðîñò³ð; ïðîì³æîê drift ~ äðåéôîâèé ïðîñò³ð; ïðîë³òíèé ïðîñò³ð floor ~ âèðîáíè÷à ïëîùà Langmuir dark ~ òåìíîâèé ïðîñò³ð Ëåíãìþðà logical representation ~ ïðîñò³ð ëîã³÷íîãî ïðåäñòàâëåííÿ wiring ~ ïðîì³æîê äëÿ ðîçì³ùåííÿ spacing ïðîì³æîê; çàçîð; ³íòåðâàë fine-line ~ ìàëà â³äñòàíü, ìàëèé çàçîð grid ~ ðîçì³ð (òåõíîëîã³÷íî¿) ñ³òêè lattice ~ ïîñò³éíà êðèñòàë³÷íèõ ãðàòîê lead ~ â³äñòàíü [çàçîð] ì³æ âèâîäàìè êîðïóñó line ~ â³äñòàíü [çàçîð] ì³æ ñòðóìîïðîâ³äíèìè äîð³æêàìè pin ~ â³äñòàíü [çàçîð] ì³æ øòèðüêîâèìè âèâîäàìè êîðïóñà proximity ~ ì³êðîçàçîð (â ë³òîãðàô³¿) tight ~ ìàëà â³äñòàíü, ìàëèé çàçîð wafer ~ ïðîì³æîê ì³æ íàï³âïðîâ³äíèêîâèìè ïëàñòèíàìè (â êàñåò³) span: mask life ~ òåðì³í ñëóæáè ôîòîøàáëîíó spanning: data ~ ñòÿãóâàííÿ äàíèõ special 1. ñïåö³àë³çîâàíà ²Ñ 2. ñïåö³àë³çîâàíèé
193
spe high-volume ~ ñïåö³àë³çîâàíà ²Ñ, ùî IR ~ ³íôðà÷åðâîíà [²×-]ñïåêòðîìåòð³ÿ âèïóñêàºòüñÿ âåëèêèìè ïàðò³ÿìè laser ionization mass ~ ëàçåðíà ³îí³çàö³éíà low-volume ~ ñïåö³àë³çîâàíà ²Ñ, ùî ìàñ-ñïåêòðîìåòð³ÿ âèïóñêàºòüñÿ ìàëèìè ïàðò³ÿìè secondary-ion mass ~ ìàñ-ñïåêòðîìåòð³ÿ íà species: âòîðèííèõ ³îíàõ chargeless àñtivated ~ íåçàðÿäæåí³ spectrophotometer ñïåêòðîôîòîìåòð àêòèâîâàí³ [çáóäæåí³] ÷àñòèíêè spectropbotometry ñïåêòðîôîòîìåòð³ÿ dopant ~ ëåãóþ÷³ äîì³øêè spectroscopy ñïåêòðîñêîï³ÿ highly electrophilic etchant ~ âèñîêî admittance ~ ñïåêòðîñêîï³ÿ ìåòîäîì ïîâíî¿ åëåêòðîô³ëüíà (åëåêòðîàêöåïòîðíà) ïðîâ³äíîñò³ ÷àñòèíêà òðàâëåííÿ Auger electron ~ åëåêòðîííà îæåradical ~ õ³ì³÷í³ ðàäèêàëè (â ðàäèêàëüíîìó ñïåêòðîñêîï³ÿ òðàâëåíí³) charge transient ~ ñïåêòðîñêîï³ÿ ðåëàêñàö³¿ volatile ~ ãðóïà ëåòó÷èõ ñïîëóê çàðÿäó, çàðÿäíà ñïåêòðîñêîï³ÿ (ãëèáîêèõ specification 1. ñïåöèô³êàö³ÿ; õàðàêòåðèñòèêè ð³âí³â) ðåëàêñàö³¿ 2. pl òåõí³÷í³ óìîâè, ÒÓ; òåõí³÷í³ âèìîãè deep-level transient ~ ñïåêòðîñêîï³ÿ component ~s 1. õàðàêòåðèñòèêè ðåëàêñàö³¿ ãëèáîêèõ ð³âí³â êîìïîíåíòó 2. òåõí³÷í³ âèìîãè äî EDX ~ äèâ. energy dispersive X-ray specêîìïîíåíò³â troscopy design ~ ïðîåêòíà ñïåöèô³êàö³ÿ electron energy loss ~ åëåêòðîííà electrical ~ ñïåöèô³êàö³ÿ ïðèíöèïîâî¿ ñïåêòðîñêîï³ÿ åíåðãåòè÷íèõ âòðàò åëåêòðè÷íî¿ ñõåìè energy dispersive X-ray ~ ñïåêòðîñêîï³ÿ Eurocard ~ çàõ³äíîºâðîïåéñüêà åíåðãåòè÷íî¿ äèñïåðñ³¿ ðåíòãåí³âñüêîãî ñïåöèô³êàö³ÿ «Åâðîêàðä» (íà äðóêîâàí³ âèïðîì³íþâàííÿ ïëàòè òà ²Ñ) energy loss ~ ñïåêòðîñêîï³ÿ åíåðãåòè÷íèõ functional ~ ôóíêö³îíàëüíà ñïåöèô³êàö³ÿ âòðàò Â²Ñ Fourier transform IR ~ ²×-ñïåêòðîñüêîï³ÿ input interface ~ ñïåöèô³êàö³ÿ âõ³äíîãî ç ïåðåòâîðåííÿì Ôóðüå ³íòåðôåéñó gap state ~ ñïåêòðîñêîï³ÿ ñòàí³â â language ~ ñïåöèô³êàö³ÿ ìîâè çàáîðîíåí³é çîí³ output interface ~ ñïåöèô³êàö³ÿ âèõ³äíîãî glancing-angle X-ray ~ ðåíòãåí³âñüêà ³íòåðôåéñó ñïåêòðîñêîï³ÿ ïðè êîâçàþ÷èõ êóòàõ rigorous [tight] ~s æîðñòê³ òåõí³÷í³ âèìîãè; infrared absorption ~ ³íôðà÷åðâîíà æîðñòê³ òåõí³÷í³ óìîâè ñïåêòðîñêîï³ÿ àáñîðáö³¿ worst-case ~ ñïåöèô³êàö³ÿ äëÿ ÿêíàéã³ðøîãî laser ~ ëàçåðíà ñïåêòðîñêîï³ÿ âèïàäêó Mossbauer ~ ìåññáàóåð³âñüêà ñïåêòðîñêîï³ÿ spectrometer ñïåêòðîìåòð MPI-TOF [multiphoton ionization time-ofAuger electron ~ åëåêòðîííèé îæåflight] mass ~ áàãàòîôîòîííà ³îí³çàö³éíà ñïåêòðîìåòð ÷àñîïðîë³òíà ìàññ-ñïåêòðîñêîï³ÿ helium ~ ãå볺âèé ìàñ-ñïåêòðîìåòð photoelectronic ~ ôîòîåëåêòðîííà magnetic-mass ~ ìàãí³òíèé ìàññïåêòðîñêîï³ÿ, ÔÅÑ ñïåêòðîìåòð photoluminescence ~ ôîòîëþì³íåñöåíòíà mass ~ ìàñ-ñïåêòðîìåòð ñïåêòðîñêîï³ÿ quadrupole mass ~ êâàäðóïîëüíèé ìàñRaman ~ ñïåêòðîñêîï³ÿ êîìá³íàö³éíîãî ñïåêòðîìåòð ðîçñ³þâàííÿ, ðàìàí³âñüêà ñïåêòðîñêîï³ÿ spectrometry ñïåêòðîìåòð³ÿ resonant tunneling ~ ñïåêòðîñêîï³ÿ atomic absorption ~ àòîìíà ñïåêòðîìåòð³ÿ ðåçîíàíñíîãî òóíåëþâàííÿ àáñîðáö³¿ thermal desorption ~ òåðìîäåñîðáö³éíà glow-discharge ~ ñïåêòðîìåòð³ÿ òë³þ÷îãî ñïåêòðîñêîï³ÿ ðîçðÿäó tunneling ~ òóíåëüíà ñïåêòðîñêîï³ÿ
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spu ultraviolet photoemission ~ óëüòðàô³îëåòîâà ôîòîåì³ñ³éíà ñïåêòðîñêîï³ÿ X-ray ~ ðåíòãåí³âñüêà ñïåêòðîñêîï³ÿ spectrum: absorption ~ ñïåêòð ïîãëèíàííÿ backscattering ~ ñïåêòð çâîðîòíîãî ðîçñ³þâàííÿ deep-level ~ ñïåêòð ãëèáîêèõ ð³âí³â, ñïåêòð öåíòð³â infrared absorption ~ ñïåêòð ïîãëèíàííÿ â ³íôðà÷åðâîí³é [²×-]îáëàñò³, ³íôðà÷åðâîíèé ñïåêòð ïîãëèíàííÿ mass ~ ìàññ-ñïåêòð programmable logic ~ íîìåíêëàòóðà ïðîãðàìîâàíèõ ëîã³÷íèõ ²Ñ X-ray ~ ñïåêòð ðåíòãåí³âñüêîãî âèïðîì³íþâàííÿ speed 1. øâèäêîä³ÿ 2. øâèäê³ñòü bonding ~ ïðîäóêòèâí³ñòü óñòàíîâêè òåðìîêîìïðåñ³éíî¿ çâàðêè drift ~ øâèäê³ñòü äðåéôó íîñ³¿â gate ~ øâèäêîä³ÿ ëîã³÷íîãî åëåìåíòó operating [operational] ~ øâèäêîä³ÿ; øâèäê³ñòü ñïðàöüîâóâàííÿ switching ~ øâèäê³ñòü ïåðåìèêàííÿ throughput ~ ïðîäóêòèâí³ñòü wavelength scanning ~ øâèäê³ñòü ñêàíóâàííÿ ïî äîâæèí³ õâèë³ spike: current ~ âèêèä ñòðóìó epitaxial ~ âèñòóï íà åï³òàêñ³àëüíîìó øàð³ spiking: Al [aluminum] ~ óòâîðåííÿ àëþì³í³ºâèõ ãîëîê (â ðåçóëüòàò³ äèôó糿 Àl äî ïîâåðõí³ ï³äêëàäêè) spin 1. öåíòðèôóãóâàííÿ | öåíòðèôóãóâàòè 2. ðîçïîä³ë ôîòîðåçèñòà ïî íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ ìåòîäîì öåíòðèôóãóâàííÿ à to ~ 1. öåíòðèôóãóâàòè 2. ðîçïîä³ëÿòè ôîòîðåçèñò ïî íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ ìåòîäîì öåíòðèôóãóâàííÿ spinner öåíòðèôóãà photoresist ~ öåíòðèôóãà äëÿ ðîçïîä³ëó ôîòîðåçèñòà ïî íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ spin-off ðîçò³êàííÿ (íàïð. ôîòîðåçèñòà çà ðàõóíîê îáåðòàííÿ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè); íàò³êàííÿ spin-on çàãîíêè äîì³øêè (ïåðøà ñòàä³ÿ
äâîõñòàä³éíîãî ïðîöåñó äèôó糿) splice: fiber ~ íåðîç’ºìíå ç’ºäíàííÿ îïòè÷íîãî âîëîêíà splitter. beam ~ ðîçùåïëþâà÷ ïðîìåíÿ; ðîçùåïëþâà÷ ïó÷êà spraying ðîçïèëþâàííÿ cathode ~ êàòîäíå ðîçïèëþâàííÿ plasma ~ ïëàçìîâå ðîçïèëþâàííÿ spreading: charge ~ ðîçò³êàííÿ çàðÿäó sputter âàêóóìíà óñòàíîâêà ³îííîãî ðîçïèëþâàííÿ diode ~ äâîõåëåêòðîäíà âàêóóìíà óñòàíîâêà ³îííîãî ðîçïèëþâàííÿ in-line ~ ïîòîêîâà âàêóóìíà óñòàíîâêà ³îííîãî ðîçïèëþâàííÿ microprocessor (automated) ~ âàêóóìíà óñòàíîâêà ³îííîãî ðîçïèëþâàííÿ ç ì³êðîïðîöåñîðíèì óïðàâë³ííÿì triode ~ òðüîõåëåêòðîäíà âàêóóìíà óñòàíîâêà ³îííîãî ðîçïèëþâàííÿ sputtering ðîçïèëþâàííÿ bias ~ ðîçïèëþâàííÿ ï³ä êóòîì bulk ~ ³îííå íàïèëåííÿ ñóö³ëüíî¿ òîíêî¿ ïë³âêè cathode ~ êàòîäíå ðîçïèëþâàííÿ dc ~ ðîçïèëþâàííÿ íà ïîñò³éíîìó ñòðóì³ diode ~ ³îííå ðîçïèëþâàííÿ â äâîõåëåêòðîäí³é âàêóóìí³é óñòàíîâö³, ä³îäíå ðîçïèëþâàííÿ high-rate ~ âèñîêîïðîäóêòèâíå ðîçïèëþâàííÿ ion-beam ~ ³îííå [³îííî-ïðîìåíåâå] ðîçïèëþâàííÿ laser ~ ëàçåðíå ðîçïèëþâàííÿ magnetron ~ ìàãíåòðîííå ðîçïèëþâàííÿ physical ~ ô³çè÷íå ðîçïèëþâàííÿ plasma ~ ïëàçìîâå ðîçïèëþâàííÿ radio-frequency cathode ~ âèñîêî÷àñòîòíå êàòîäíå ðîçïèëþâàííÿ reactive ~ ðåàêòèâíå ³îííå ðîçïèëþâàííÿ RF ~ âèñîêî÷àñòîòíå ³îííå ðîçïèëþâàííÿ secondary ~ ðîçïèëþâàííÿ âòîðèííèìè ³îíàìè thin-film ~ ³îííå íàïèëåííÿ òîíêî¿ ïë³âêè triode ~ ³îííå ðîçïèëþâàííÿ â òðüîõåëåêòðîäí³é âàêóóìí³é óñòàíîâö³, òð³îäíå ðîçïèëþâàííÿ
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sta squash: wire ~ äåôîðìàö³ÿ äðîòÿíèõ (ïðîâ³äíèêîâèõ) âèâîä³â squeegee ðàêåëü printer ~ ðàêåëü óñòàíîâêè òðàôàðåòíîãî äðóêó squeezing: dimensional ~ ìàñøòàáóâàííÿ, ïðîïîðö³éíå çìåíøåííÿ ðîçì³ð³â (åëåìåíò³â ²Ñ) squid íàäïðîâ³äíèé êâàíòîâèé ³íòåðôåðåíö³éíèé äàò÷èê, ÍÊÂ²Ä multiple weak-link ~ áàãàòîåëåìåíòíèé ÍÊÂ²Ä ³ç ñëàáêèìè çâ’ÿçêàìè stabilene ñòàá³ëüíèé (ïë³âêîâèé ïëàñòèê òèïó ìàéëàðó ³ ðóá³ë³òó äëÿ ðó÷íîãî âèãîòîâëåííÿ îðèã³íàë³â ôîòîøàáëîí³â) stability 1. ñò³éê³ñòü 2. ñòàá³ëüí³ñòü chemical ~ õ³ìîñò³éê³ñòü dimension(al) ~ ñòàá³ëüí³ñòü ðîçì³ð³â high-voltage ~ ñòàá³ëüí³ñòü (ïðèëàäó) ïðè âèñîê³é íàïðóç³ long-term ~ äîâãîòðèâàëà ñòàá³ëüí³ñòü temperature ~ òåìïåðàòóðíà ñòàá³ëüí³ñòü trim ~ ñòàá³ëüí³ñòü (ðåçèñòîð³â) ï³ñëÿ ï³äãîíêè stabilization: thermal ~ òåðì³÷íà ñòàá³ë³çàö³ÿ stack 1. íàá³ð; êîìïëåêò 2. ñòåêîâà ïàì’ÿòü ~ blades íàá³ð ð³æó÷èõ äèñê³â mask ~ áàãàòîøàðîâà ìàñêà; ìàñêóþ÷à áàãàòîøàðîâà ñòðóêòóðà stacking ôîðìóâàííÿ áàãàòîð³âíåâî¿ ñòðóêòóðè growth ~ ñõîäèíêà ðîñòó stage: air-bearing ~ êîîðäèíàòíèé ñò³ë íà ïîâ³òðÿíèõ ï³äøèïíèêàõ amplifier ~ ï³äñèëþâàëüíèé êàñêàä design ~ åòàï ïðîåêòóâàííÿ implant-masking ~ åòàï ìàñêóâàííÿ ïåðåä ³ìïëàíòàö³ºþ layout ~ åòàï ðîçðîáêè òîïîëî㳿 photoetching ~ åòàï ôîòîë³òîãðàô³¿ step-and-repeat ~ êîîðäèíàòíèé ñò³ë ç êðîêîâèì ïåðåì³ùåííÿì x-y (workpiece) ~ êîîðäèíàòíèé ñò³ë x-y-z [õ-ó-è] ~ òðüîõêîîðäèíàòíèé ñò³ë staker: pin ~ ïðèñòð³é äëÿ óñòàíîâêè øòèð³â (íàïð. íà äðóêîâàí³é ïëàò³)
stalk îñíîâà êîðïóñó (òèïó ÒÎ-5) standard: dual in-line ~ ñòàíäàðòíèé ïëîñêèé DIPêîðïóñ state 1. ñòàí; ïîëîæåííÿ 2. (åíåðãåòè÷íå) ñòàí; (åíåðãåòè÷íèé) ð³âåíü 3. ðåæèì (ðîáîòè) acceptor ~ àêöåïòîðíèé ð³âåíü allowed ~ äîçâîëåíèé ñòàí amorphous ~ àìîðôíèé ñòàí band-edge ~ åíåðãåòè÷íèé ñòàí íà êðàþ çîíè bulk ~ ãëèáîêèé ð³âåíü bussing ~ 1. ñòàí øèíè 2. ñòàí êàíàëó çâ’ÿçêó crystalline ~ êðèñòàë³÷íèé ñòàí current ~ ñó÷àñíèé ð³âåíü (ðîçâèòêó òåõíîëî㳿) cutoff ~ ðåæèì â³äñ³÷êè defect ~ äîì³øêîâèé ð³âåíü (â çàáîðîíåí³é çîí³) degenerate ~ âèðîäæåíèé ñòàí donor ~ äîíîðíèé ð³âåíü don’t care ~ äîâ³ëüíèé ñòàí (ëîã³÷íîãî åëåìåíòó, øèíè); íåâèçíà÷åíèé ñòàí dopant ~ äîì³øêîâèé ð³âåíü energy ~ åíåðãåòè÷íèé ñòàí; åíåðãåòè÷íèé ð³âåíü excited ~ çáóäæåíèé ñòàí execution ~ ñòàí âèêîíàííÿ ïðîãðàìè filled ~ çàïîâíåíèé ð³âåíü gap ~ ð³âåíü â çàáîðîíåí³é çîí³ ground ~ îñíîâíèé ñòàí highly ordered ~ âïîðÿäêîâàíèé ñòàí interface ~ ïåðåáóâàííÿ íà ïîâåðõí³ ðîçä³ëó inverse ~ ³íâåðñíèé ñòàí logical ~ ëîã³÷íèé ñòàí; ëîã³÷íèé ð³âåíü off ~ çàêðèòèé ñòàí on ~ â³äêðèòèé ñòàí pinch-off ~ ñòàí â³äñ³÷åííÿ (â³äñ³÷êè) êàíàëó rest ~ ñòàí ï³äêëþ÷åííÿ äî çàãàëüíî¿ øèíè âèõîäó Â²Ñ çà â³äñóòíîñò³ âõ³äíîãî ñèãíàëó shallow ~ äð³áíèé (ì³ëêèé) ð³âåíü solid ~ òâåðäå ò³ëî steady ~ ñòàëèé [ñòàö³îíàðíèé] ðåæèì superconducting ~ íàäïðîâ³äíèé ñòàí surface ~ ïîâåðõíåâèé ñòàí trapping ~ ïàñòêà, öåíòð çàõîïëåííÿ x-state ~ äîâ³ëüíèé ñòàí (ëîã³÷íîãî åëåìåíòó, øèíè); íåâèçíà÷åíèé ñòàí station 1. (ðîáî÷à) ïîçèö³ÿ; ðîáî÷å ì³ñöå 2.
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ste ïðèñòð³é; óñòàòêóâàííÿ antistatic ~ ïðèñòð³é äëÿ çàõèñòó â³ä ñòàòè÷íî¿ åëåêòðèêè assembly ~ ðîáî÷å ì³ñöå äëÿ çá³ðêè CAD (work) ~ àâòîìàòèçîâàíå ðîáî÷å ì³ñöå [ÀÐÌ] ïðîåêòóâàëüíèêà cassette-to-cassette end ~ ïîçèö³ÿ ì³æîïåðàö³éíîãî òðàíñïîðòóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí ç êàñåòè â êàñåòó clean work ~ ðîáî÷å ì³ñöå â ÷èñòîìó âèðîáíè÷îìó ïðèì³ùåíí³ color work ~ ÀÐÌ ïðîåêòóâàëüíèêà ç êîëüîðîâèì äèñïëåºì graphic ~ ÀÐÌ ïðîåêòóâàëüíèêà ç ãðàô³÷íèì òåðì³íàëîì interactive display ~ ÀÐÌ ïðîåêòóâàëüíèêà ç ³íòåðàêòèâíèì äèñïëåºì ion etching ~ óñòàíîâêà ³îííîãî òðàâëåííÿ laminar-flow ~ ðîáî÷å ì³ñöå ç ëàìèíàðíèì ïîòîêîì (îá÷èùåíîãî) ïîâ³òðÿ modular ~ ìîäóëüíà òåõíîëîã³÷íà óñòàíîâêà pickup ~ ïðèñòð³é äëÿ çàõîïëåííÿ ³ ïîçèö³îíóâàííÿ êðèñòàëà prefunctional test ~ âíóòð³øíüîñõåìíèé áëîê òåñòóâàííÿ probe ~ çîíäîâà âèì³ðþâàëüíà óñòàíîâêà soldering ~ 1. ïîçèö³ÿ ïàÿííÿ 2. óñòàíîâêà ïàÿííÿ test ~ âèïðîáóâàëüíà óñòàíîâêà wafer handling ~ ïðèñòð³é äëÿ ì³æîïåðàö³éíîãî òðàíñïîðòóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí; ïðèñòð³é äëÿ ïîäà÷³ íàï³âïðîâ³äíèêîâèõ ïëàñòèí wafer inspection ~ óñòàíîâêà êîíòðîëþ íàï³âïðîâ³äíèêîâèõ ïëàñòèí (ïåðåâàæíî â³ÇÏàëüíîãî) WIP ~ äèâ. workpiece-in-process station work ~ ðîáî÷à ïîçèö³ÿ; ðîáî÷å ì³ñöå workpiece-in-process ~ ïðîì³æíèé íàêîïè÷óâà÷; íàêîïè÷óâà÷ äëÿ íåçàâåðøåíî¿ ïðîäóêö³¿ statistics: Boltzman ~ ñòàòèñòèêà Áîëüöìàíà Boose-Einstein ~ ñòàòèñòèêà Áîçå– Åéíøòåéíà Fermi ~ ñòàòèñòèêà Ôåðì³ steel: porcelain-enameled ~ åìàëüîâàíà ñòàëü (ï³äêëàäêà äëÿ òÑ)
stem îñíîâà êîðïóñó (íàïð. òèïó ÒÎ-5) stencil: lift-off ~ øàáëîí äëÿ çâîðîòíî¿ ë³òîãðàô³¿; ìàñêà äëÿ çâîðîòíî¿ ë³òîãðàô³¿ screen (printing) ~ òðàôàðåò (äëÿ âèãîòîâëåííÿ òîâñòîïë³âêîâèõ òÑ) step 1. (òåõíîëîã³÷íà) îïåðàö³ÿ 2. ñõîäèíêà, ñòóï³íü 3. êðîê (íàïð. ìóëüòèïë³êàö³ÿ) 4. ïîñë³äîâíî åêñïîíóâàòè ç êðîêîâèì ïåðåì³ùåííÿì; ïîñë³äîâíî ìóëüòèïë³êóâàòè ç êðîêîâèì ïåðåì³ùåííÿì drive-in diffusion ~ ðîçã³í äîì³øêè (äðóãà ñòàä³ÿ äâîõñòàä³éíî¿ äèôó糿) execute ~ êðîê âèêîíàííÿ (ïðîãðàìè) interconnection ~ ôîðìóâàííÿ ç’ºäíàíü; ìîíòàæ mask ~ 1. ìàñêóâàííÿ 2. ñõîäèíêà íà ìàñö³ mesa ~ ìåçàñòðóêòóðà oxide ~ ñõîäèíêà â îêñèäíîìó øàð³ pattern-printing ~ ôîðìóâàííÿ ìàëþíêà photolithographic ~ ôîòîë³òîãðàô³ÿ photomasking ~ ôîòîìàñêóâàííÿ; ôîòîë³òîãðàô³ÿ predeposit ~ çàãîíêà äîì³øêè (ïåðøà ñòàä³ÿ äâîõñòàä³éíî¿ äèôó糿) process (ing) ~ òåõíîëîã³÷íà îïåðàö³ÿ yellow room’s ~ îïåðàö³ÿ, ùî ïðîâîäèòüñÿ â æîâò³é ê³ìíàò³; îïåðàö³ÿ ôîòîë³òîãðàô³¿ step-and-repeat ïîñë³äîâíå êðîêîâå åêñïîíóâàííÿ; ïîñë³äîâíà êðîêîâà ìóëüòèïë³êàö³ÿ step-on-wafer ïîñë³äîâíå êðîêîâå åêñïîíóâàííÿ direct ~ ïðÿìå ïîñë³äîâíå êðîêîâå åêñïîíóâàííÿ (áåç âæèâàííÿ øàáëîí³â) stepper: high-stepping wafer ~ âèñîêîïðîäóêòèâíà óñòàíîâêà ïîñë³äîâíîãî êðîêîâîãî åêñïîíóâàííÿ optical mask ~ ôîòîïîâòîðþâà÷, ôîòîøòàìï optical wafer ~ óñòàíîâêà ôîòîë³òîãðàô³¿ ç ïîñë³äîâíèì êðîêîâèì åêñïîíóâàííÿì Ultratech ~ óñòàíîâêà ïîñë³äîâíîãî êðîêîâîãî åêñïîíóâàííÿ ô³ðìè Ultratech (ÑØÀ) wafer ~ óñòàíîâêà ïîñë³äîâíîãî êðîêîâîãî åêñïîíóâàííÿ; óñòàíîâêà ïîñë³äîâíîãî êðîêîâîãî ìóëüòèïë³êóâàííÿ X-ray ~ óñòàíîâêà ðåíòãåí³âñüêî¿ ë³òîãðàô³¿ ç ïîñë³äîâíèì êðîêîâèì åêñïîíóâàííÿì
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str 5õ ~ óñòàíîâêà ïðîåêö³éíî¿ ë³òîãðàô³¿ ç 5êðàòíèì çìåíøåííÿì çîáðàæåííÿ stepping ïîñë³äîâíå êðîêîâå åêñïîíóâàííÿ; ïîñë³äîâíà êðîêîâà ìóëüòèïë³êàö³ÿ stick (ë³í³éíèé) ìàãàçèí, òàðà-ïåíàë (íàïð. äëÿ ²Ñ â DIP-êîðïóñ³) sticks ìåòîä «Ñò³êñ» (ô³ðìîâà íàçâà ìåòîäó àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ òîïîëî㳿 ²Ñ) stiffness æîðñòê³ñòü (êðèòåð³é îö³íêè ìàòåìàòè÷íèõ ìîäåëåé Â²Ñ ç ïîñò³éíèìè, ùî ñèëüíî ðîçð³çíÿþòüñÿ, ÷àñó) stitching 1. ôîðìóâàííÿ ç’ºäíàíü ìåòîäîì çøèâàííÿ (íàïð. ïðè òåðìîêîìïðåñ³¿) 2. «çøèâàííÿ ïîë³â» (ïðè àâòîìàòèçîâàíîìó ïðîåêòóâàíí³) ball ~ (òåðìîêîìïðåñ³éíå) çøèâàííÿ (âèâîä³â) êóëüêîþ ultrasonic ~ óëüòðàçâóêîâå çøèâàííÿ (âèâîä³â) stitchwire ñòåæêîâèé ìîíòàæ (áåçñïàéíèé ìåòîä ìîíòàæó ³ ç’ºäíàííÿ êîìïîíåíò³â íà ïëàò³) stop(ðår): channel ~ îáìåæóâà÷ êàíàëó, êàíàëîîáìåæóþ÷à îáëàñòü diffusion ~ îáìåæóâà÷ äèôó糿 storage 1. çàïàì’ÿòîâóþ÷èé ïðèñòð³é, ÇÏ; ïàì’ÿòü 2. çàïàì’ÿòîâóâàííÿ, çáåð³ãàííÿ; íàêîïè÷åííÿ carrier ~ çáåð³ãàííÿ çàðÿäó; íàêîïè÷åííÿ çàðÿäó coordinate-addressable ~ êîîðäèíàòíèé ÇÏ; ìàòðè÷íèé ÇÏ data ~ çàïàì’ÿòîâóâàííÿ [çáåð³ãàííÿ] äàíèõ demountable ~ çì³ííèé ÇÏ dynamic ~ äèíàì³÷íèé ÇÏ; äèíàì³÷íà ïàì’ÿòü extended core ~ ÇÏ âåëèêîãî îá’ºìó floating-gate ~ ÇÏ íà ÌÎÍ-òðàíçèñòîðàõ ç ïëàâàþ÷èì çàòâîðîì monolithic ~ íàï³âïðîâ³äíèêîâèé ÇÏ; íàï³âïðîâ³äíèêîâà ïàì’ÿòü random-àñcess ~ ÇÏ ç äîâ³ëüíîþ âèá³ðêîþ, ÇÏÏÂ; ïàì’ÿòü ç äîâ³ëüíîþ âèá³ðêîþ read-only ~ ïîñò³éíèé ÇÏ, ÏÇÏ; ïîñò³éíà ïàì’ÿòü store 1. çàïàì’ÿòîâóþ÷èé ïðèñòð³é, ÇÏ; ïàì’ÿòü 2. çàïàì’ÿòîâóâàííÿ, çáåð³ãàííÿ; íàêîïè÷åííÿ | çàïàì’ÿòîâóâàòè; çáåð³ãàòè;
íàêîïè÷óâàòè writable control ~ çàïèñóâàíà ïàì’ÿòü áëîêó óïðàâë³ííÿ (â ïðîöåñîðíèõ ²Ñ) straightening: lead ~ âèð³âíþâàííÿ âèâîä³â strain äåôîðìàö³ÿ diffusion-induced ~ äåôîðìàö³ÿ (êðèñòàë³÷íèõ ãðàòîê), âèêëèêàíà äèôó糺þ äîì³øêè lattice ~ äåôîðìàö³ÿ êðèñòàë³÷íèõ ãðàòîê strategy: design ~ ìåòîäîëîã³ÿ [ñòðàòåã³ÿ] ïðîåêòóâàííÿ “divide and conquer” ~ ìåòîäîëîã³ÿ ïðîåêòóâàííÿ «ðîçä³ëÿé ³ âîëîäàðþé» (äèâ. ò-æ “divide and conquer” àðproach) early fault dropping ~ ñòðàòåã³ÿ ðàííüîãî âèêëþ÷åííÿ íåñïðàâíîñòåé (³ç ñïèñêó ìîäåëüîâàíèõ íåñïðàâíîñòåé ïðè ¿õ ïåðøîìó âèÿâëåíí³) stratum: n ~ øàð (ç åëåêòðîïðîâ³äí³ñòþ) n-òèïó ð+ ~ øàð ð+-òèïó stream: plasma ~ ïëàçìîâèé ïó÷îê street ïðîì³æîê ì³æ êðèñòàëàìè (íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³) strength: ~ nodal state ëîã³÷íà «ñèëà» ñòàíó âóçëà ~ value ëîã³÷íà «ñèëà» ñèãíàëó adhesion [adhesive] ~ ñèëà àäãå糿 alpha(-ray) resistant ~ (ðàä³àö³éíà) ñò³éê³ñòü äî àëüôà-âèïðîì³íþâàííÿ bond ~ ì³öí³ñòü çâ’ÿçêó (íàïð. çâàðíîãî ç’ºäíàííÿ) breakdown ~ åëåêòðè÷íà ì³öí³ñòü (íàïð. ä³åëåêòðèêà) dielectric ~ åëåêòðè÷íà ì³öí³ñòü ä³åëåêòðèêà edge ~ êîíòðàñòí³ñòü êðàþ çîáðàæåííÿ field ~ íàïðóæåí³ñòü ïîëÿ high-impedance ~ âèñîêî³ìïåäàíñíà ëîã³÷íà «ñèëà» (ïðèïèñóºòüñÿ âóçëó ç âèñîêèì ³ìïåäàíñîì) latchup ~ ñò³éê³ñòü äî åôåêòó çàùèïóâàííÿ (äëÿ ÊÌÎÍ ²Ñ) logic ~ ëîã³÷íà «ñèëà» (ïðèïèñóºòüñÿ âóçëó, ï³äêëþ÷åíîìó äî äæåðåëà ñòðóìó, ïðè áàãàòîçíà÷íîìó ìîäåëþâàíí³ Â²Ñ) order ~ ì³ðà âïîðÿäêîâàíîñò³ resistive ~ ðåçèñòèâíà ëîã³÷íà «ñèëà»
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str withstand ~ ñò³éê³ñòü; ïðîòèä³ÿ surface-wide ~ âèäàëåííÿ çàëèøê³â stress: ôîòîðåçèñòà ç³ âñ³º¿ ïîâåðõí³ damp heat ~ íàâàíòàæåííÿ ïðè (íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) âèïðîáóâàíí³ â àòìîñôåð³ ãàðÿ÷î¿ ïàðè structure 1. ñòðóêòóðà; êîíñòðóêö³ÿ 2. IC ~ íàâàíòàæåííÿ íà ²Ñ ôîðìóâàòè ñòðóêòóðó striation: air-isolation monolithic ~ ñòðóêòóðà coating ~ ñìóãàñò³ñòü ïîêðèòòÿ íàï³âïðîâ³äíèêîâî¿ ²Ñ ç ïîâ³òðÿíîþ (÷åðãóâàííÿ ñâ³òëèõ ³ òåìíèõ ñìóã íà ³çîëÿö³ºþ ïîêðèòò³) array ~ ìàòðè÷íà ñòðóêòóðà striking çàïàëåííÿ (ðîçðÿäó) band ~ çîííà ñòðóêòóðà strip 1. ñìóæêà; äîð³æêà; ñòð³÷êà 2. âèäàëÿòè basic ~ áàçîâà ñòðóêòóðà [çí³ìàòè] ôîòîðåçèñò (äèâ. ò-æ stripe) bilevel ~ äâîð³âíåâà ñòðóêòóðà backing ~ íåñó÷à ñòð³÷êà bipolar ~ á³ïîëÿðíà ñòðóêòóðà conductor [connector] ~ ñòðóìîïðîâ³äíà bridge ~ òåñòîâà ñòðóêòóðà (íà äîð³æêà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³) diffused ~ äèôóç³éíà ñòðóìîïðîâ³äíà charge-coupled (device) ~ 1. ñòðóêòóðà ÏÇÇ äîð³æêà 2. ñòðóêòóðà íà ÏÇÇ gate ~ äîð³æêà çàòâîðà; ñìóæêà çàòâîðà charge-transfer (device) ~ ñòðóêòóðà lead-frame ~ â³äð³çîê ñòð³÷êè ç âèâ³äíèìè ÏÏÇ ðàìêàìè chip ~ 1. ñòðóêòóðà êðèñòàëà (²Ñ) 2. polysilicon ~ ñòðóìîïðîâ³äíà äîð³æêà ç ñòðóêòóðà ²Ñ ïîë³êðèñòàë³÷íîãî êðåìí³þ CMOS ~ êîìïëåìåíòàðíà ÌÎÍ-ñòðóêòóðà, semiconductor (material) ~ ÊÌÎÍ-ñòðóêòóðà íàï³âïðîâ³äíèêîâà ñìóæêà contiguous-disk propagating ~ ñõåìà ïðîñóâàííÿ [ïðîñóâàþ÷à ñòðóêòóðà] ÖÌÄ stripe ñìóæêà; äîð³æêà; ñòð³÷êà (äèâ. ò-æ íà äîòè÷íèõ äèñêàõ strip) emitter ~ åì³òåðíà ñìóæêà data ~ ñòðóêòóðà äàíèõ metallic ~ ìåòàëåâà ñòðóìîïðîâ³äíà äîð³æêà delta-type doping ~ ñòðóêòóðà ç ðîçïîä³ëîì äîì³øêè ó âèãëÿä³ ä-ôóíêö³¿ resistor ~ äîð³æêà ðåçèñòîðà disordered ~ íåâïîðÿäêîâàíà ñòðóêòóðà stripline ì³êðîñìóæêîâà ë³í³ÿ ïåðåäà÷³ double-barrier parabolic well ~ stripped 1. ñìóæêîâèé 2. âèäàëåíèé äâîõáàð’ºðíà ñòðóêòóðà ç ïàðàáîë³÷íîþ (ôîòîðåçèñò) êâàíòîâîþ ÿìîþ stripper 1. óñòàíîâêà äëÿ âèäàëåííÿ ôîòîðåçèñòà 2. ðåàêòèâ äëÿ âèäàëåííÿ double-implanted ~ ñòðóêòóðà, âèãîòîâëåíà ôîòîðåçèñòà ìåòîäîì ïîäâ³éíî¿ ³îííî¿ ³ìïëàíòàö³¿ aqueous ~ âîäíèé ðîç÷èí äëÿ âèäàëåííÿ functional ~ ôóíêö³îíàëüíà ñòðóêòóðà ôîòîðåçèñòà gate ~ 1. ñòðóêòóðà ëîã³÷íîãî åëåìåíòó 2. dry (plasma) photoresist ~ óñòàíîâêà äëÿ ñòðóêòóðà çàòâîðà (ïîëüîâîãî òðàíçèñòîðà) ñóõîãî [ïëàçìîâîãî] âèäàëåííÿ ôîòîðåçèñòà graded ~ ñòðóêòóðà ç ïðîô³ëåì ðîçïîä³ëó hand ~ ðó÷íèé ³íñòðóìåíò äëÿ çíÿòòÿ (íàïð. äîì³øêè, ùî ïëàâíî çì³íþºòüñÿ ³çîëÿö³¿ ç äðîò³â) (ïëàâíîçì³ííèì ðîçïîä³ëîì) photoresist ~ 1. óñòàíîâêà äëÿ âèäàëåííÿ heterogeneous ~ ãåòåðîãåííà ñòðóêòóðà ôîòîðåçèñòà 2. ðåàêòèâ äëÿ âèäàëåííÿ heterojunction ~ ãåòåðîñòðóêòóðà, ôîòîðåçèñòà ñòðóêòóðà íà ãåòåðîïåðåõîäàõ stripping âèäàëåííÿ [çíÿòòÿ] ôîòîðåçèñòà homogeneous ~ ãîìîãåííà ñòðóêòóðà dry resist ~ âèäàëåííÿ ñóõîãî ðåçèñòà implanted ~ ÌÎÍ-ñòðóêòóðà, âèãîòîâëåíà oxygen-gas plasma ~ âèäàëåííÿ ìåòîäîì ³îííî¿ ³ìïëàíòàö³¿, ³îííîôîòîðåçèñòà â êèñíåâ³é ïëàçì³ ³ìïëàíòîâàíà ñòðóêòóðà plasma ~ ïëàçìîâå âèäàëåííÿ ôîòîðåçèñòà insulated substrate ~ ñòðóêòóðà òèïó «êðåìí³é íà ä³åëåêòðèö³», ÊÍÄ-ñòðóêòóðà
199
str integrated (circuit) ~ ñòðóêòóðà ²Ñ, ³íòåãðàëüíà ñòðóêòóðà interconnection ~ ñòðóêòóðà ì³æç’ºäíàíü interdigital collector ~ ñòð³÷íî-ãðåá³í÷àñòà ñòðóêòóðà êîëåêòîðà interface ~ ñòðóêòóðà ïîâåðõí³ ðîçä³ëó isolation-moat ~ ñòðóêòóðà ç ³çîëþþ÷èìè êàíàâêàìè Josephson-effect ~ ñòðóêòóðà íà åôåêò³ Äæîçåôñîíà junction-isolated ~ ñòðóêòóðà ç ³çîëþþ÷èìè ð–n-ïåðåõîäàìè latchup resistant ~ ÊÌÎÍ-ñòðóêòóðà, ñò³éêà äî åôåêòó çàùèïóâàííÿ lateral ~ ãîðèçîíòàëüíà ñòðóêòóðà lateral transistor ~ ñòðóêòóðà ãîðèçîíòàëüíîãî òðàíçèñòîðà lattice ~ ñòðóêòóðà êðèñòàë³÷íèõ ãðàòîê lattice-strained ~ ñòðóêòóðà íà íàï³âïðîâ³äíèêó ç äåôîðìîâàíèìè êðèñòàë³÷íèìè ãðàòîêàìè lead ~ êîíñòðóêö³ÿ âèâîä³â logic ~ ëîã³÷íà ñòðóêòóðà MAS ~ ñòðóêòóðà ìåòàë–îêñèä àëþì³í³þ– íàï³âïðîâ³äíèê, ÌÀÍ-ñòðóêòóðà mask ~ 1. ñòðóêòóðà ôîòîøàáëîíó 2. ñòðóêòóðà ìàñêè, ñòðóêòóðà ìàñêóþ÷îãî øàðó merged ~ (³íòåãðàëüíà) ñòðóêòóðà ç ôóíêö³îíàëüíî ñóì³ùåíèìè îáëàñòÿìè mesa (-type) ~ ìåçàñòðóêòóðà MIM ~ ñòðóêòóðà ìåòàë–ä³åëåêòðèê–ìåòàë, ÌÄÌ-ñòðóêòóðà MIS ~ ñòðóêòóðà ìåòàë–ä³åëåêòðèê– íàï³âïðîâ³äíèê, ÌÄÍ-ñòðóêòóðà MNOS ~ ñòðóêòóðà ìåòàë–í³òðèä–îêñèä– íàï³âïðîâ³äíèê, ÌÍÎÍ-ñòðóêòóðà monolithic(-type)~ ìîíîë³òíà ñòðóêòóðà; ñòðóêòóðà íàï³âïðîâ³äíèêîâî¿ ²Ñ MOS ~ ñòðóêòóðà ìåòàë–îêñèä– íàï³âïðîâ³äíèê, ÌÎÍ-ñòðóêòóðà (äèâ. ò-æ MOS) MSM ~ ñòðóêòóðà ìåòàë–íàï³âïðîâ³äíèê– ìåòàë MTOS ~ ÌÎÍ-ñòðóêòóðà ç òîâñòèì îêñèäíèì øàðîì multigate ~ ÌÎÍ-ñòðóêòóðà áàãàòîçàòâîðà multilayer [multilevel] ~ áàãàòîøàðîâà ñòðóêòóðà (íàïð. êîíòàêòíîãî ìàéäàí÷èêà); áàãàòîð³âíåâà ñòðóêòóðà (íàïð. ç’ºäíàíü)
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nonhomogeneous-base ~ (òðàíçèñòîðíà) ñòðóêòóðà ç íåãîìîãåííîþ áàçîþ n-p-n ~ n–p–n-ñòðóêòóðà nonresonant surface periodical ~ íåðåçîíàíñíà ïåð³îäè÷íà ïîâåðõíåâà ñòðóêòóðà oxide-isolated ~ ñòðóêòóðà (²Ñ) ç îêñèäíîþ ³çîëÿö³ºþ pin ~ p–i–n-ñòðóêòóðà planar ~ ïëàíàðíà ñòðóêòóðà planar superlattice ~ ñòðóêòóðà ó âèãëÿä³ ïëàíàðíî¿ íàäãðàòêè p-n-p ~ ð-ï-ð-ñòðóêòóðà polycrystalline resistor ~ ñòðóêòóðà ðåçèñòîðà ç ïîë³êðèñòàë³÷íîãî êðåìí³þ propagating ~ ñõåìà ïðîñóâàííÿ [ïðîñóâàþ÷à ñòðóêòóðà] ÖÌÄ quantum-box ~ ñòðóêòóðà ç êâàíòîâèìè ÿùèêàìè quantum well ~ ñòðóêòóðà ç êâàíòîâèìè ÿìàìè quasi-one dimensional ~ êâàç³îäíîâèì³ðíà ñòðóêòóðà recessed ~ ñòðóêòóðà ²Ñ ç ù³ëèñòîþ ³çîëÿö³ºþ regular crystal ~ ìîíîêðèñòàë³÷íà ñòðóêòóðà self-aligned [self-registered] gate ~ ñòðóêòóðà ç ñàìîñóì³ùåíèìè çàòâîðàìè semiconductor ~ íàï³âïðîâ³äíèêîâà ñòðóêòóðà; ñòðóêòóðà íàï³âïðîâ³äíèêîâî¿ ²Ñ semi-ROX ~ ñòðóêòóðà ç îêñèäíèì øàðîì, ùî çàïîâíþº äð³áí³ (ì³ëê³)êàíàâêè series-gated ~ ñòðóêòóðà ç ïîñë³äîâíî ñïîëó÷åíèìè ëîã³÷íèìè åëåìåíòàìè shallow chip ~ ñòðóêòóðà êðèñòàëà ²Ñ ç äð³áíèìè (ì³ëêèìè) îáëàñòÿìè shield ~ 1. åêðàíóþ÷à ñòðóêòóðà 2. ìàñêóþ÷à ñòðóêòóðà short-channel (device) ~ ñòðóêòóðà ç êîðîòêèì êàíàëîì SIC ~ ñòðóêòóðà íàï³âïðîâ³äíèêîâî¿ ²Ñ silicide-on-polysilicon ~ ñòðóêòóðó òèïó «ñèë³öèä íà ïîë³êðåìí³¿» silicon-in-sapphire ~ ñòðóêòóðà òèïó «êðåìí³é â ñàïô³ð³», ÊÂÑ-ñòðóêòóðà silicon-(on-) insulator ~ ñòðóêòóðà òèïó «êðåìí³é íà ä³åëåêòðèö³», ÊÍÄ-ñòðóêòóðà silicon-on-sapphire ~ ñòðóêòóðà òèïó «êðåìí³é íà ñàïô³ð³», ÊÍÑ-ñòðóêòóðà
sub silicon-on-spinel ~ ñòðóêòóðà òèïó «êðåìí³é íà øï³íåë³» silicon-over îõide-semiconductor ~ ñòðóêòóðà òèïó «êðåìí³é íà îêñèä³», ñòðóêòóðà òèïó «êðåìí³é íà îêñèäíîìó ä³åëåêòðèêó» single-crystal ~ ìîíîêðèñòàë³÷íà ñòðóêòóðà slow-wave ~ (ìîíîë³òíà) ñòðóêòóðà íà ïîâ³ëüíèõ õâèëÿõ sphalerite-type ~ (êóá³÷íà) ñòðóêòóðà òèïó ñôàëåðèòó submicrometer [submicron] ~ ñòðóêòóðà ç ñóáì³êðîííèìè ðîçì³ðàìè (åëåìåíò³â ²Ñ), ñóáì³êðîííà ñòðóêòóðà superlattice ~ ñòðóêòóðà íàäãðàòêè surface periodical ~ ïîâåðõíåâà ïåð³îäè÷íà ñòðóêòóðà test ~ òåñòîâà ñòðóêòóðà tiered ~ áàãàòîð³âíåâà ñòðóêòóðà; áàãàòîÿðóñíà ñòðóêòóðà totally ordered ~ ïîâí³ñòþ âïîðÿäêîâàíà ñòðóêòóðà (²Ñ) trench ~ ù³ëèñòà ñòðóêòóðà; ñòðóêòóðà ç êàíàâêàìè trench-gate ~ ñòðóêòóðà (ïàëåâîãî òðàíçèñòîðà) ³ç çàòâîðîì â V-ïîä³áí³é êàíàâö³ trench isolation ~ ñòðóêòóðà ²Ñ ç ù³ëèñòîþ ³çîëÿö³ºþ triple-diffusion ~ ñòðóêòóðà, âèãîòîâëåíà ìåòîäîì ïîòð³éíî¿ äèôó糿 triple-poly ~ ñòðóêòóðà ²Ñ ç òðüîìà ð³âíÿìè ïîë³êðèñòàë³÷íîãî êðåìí³þ twin-well ~ äâîõêèøåíüêîâà ñòðóêòóðà (íàïð. ÊÌÎÍ ²Ñ) ultra-small ~ íàäìàëà ñòðóêòóðà unipolar ~ óí³ïîëÿðíà ñòðóêòóðà van der Pauw ~ òåñòîâà ñòðóêòóðà ó âèãëÿä³ õðåñòà (äëÿ ïåðåâ³ðêè ðåçèñòîð³â) vertical injector ~ ñòðóêòóðà ç âåðòèêàëüíèìè ³íæåêòîðàìè vertically integrated ~ 1. ñòðóêòóðà ²Ñ ç âåðòèêàëüíîþ ³íòåãðàö³ºþ 2. îðãàí³çàö³éíà ñòðóêòóðà (ô³ðìè) ç âåðòèêàëüíîþ ³íòåãðàö³ºþ V-groove ~ ñòðóêòóðà ç V-ïîä³áíîþ êàíàâêîþ wafer acceptance test ~ òåñòîâà ñòðóêòóðà, ùî âèçíà÷ຠÿê³ñòü íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè
wiring layer ~ ñòðóêòóðà øàðó ç’ºäíàíü zinc blende ~ êðèñòàë³÷íà ñòðóêòóðà öèíêîâî¿ îáìàíêè structuring: fine ~ ïðåöèç³éíà ì³êðîñòðóêòóðèçàö³ÿ (çâè÷àéíî â ñóáì³êðîíí³é îáëàñò³ ðîçì³ð³â) stub: contact ~ êîíòàêòíèé ñòîâï÷èê monolithic ~ ìîíîë³òíèé ñòîâï÷èê (âåðòèêàëüíå ç’ºäíàííÿ ì³æ øàðàìè ñïîëó÷íî¿ ìåòàë³çàö³¿) studnite ñòóäí³ò (ïëàñòìàñîâà ïë³âêà äëÿ âèãîòîâëåííÿ îðèã³íàë³â ôîòîøàáëîí³â ðó÷íèì ñïîñîáîì) stuffing óñòàíîâêà [ìîíòàæ] êîìïîíåíò³â (íà äðóêîâàí³é ïëàò³) style: chip ~ íàá³ð ïðàâèë ïðîåêòóâàííÿ íà ð³âí³ êðèñòàëà circuit ~ íàá³ð ïðàâèë ïðîåêòóâàííÿ ñõåìè íà åëåêòðè÷íîìó ð³âí³ design ~ ìåòîä ïðîåêòóâàííÿ; âàð³àíò âèêîíàííÿ ÒÎ case ~ òðàíçèñòîðíèé òèï êîðïóñó, êîðïóñ òèïó ÒÎ styrene ñòèðîë (ìàòåð³àë äëÿ âèãîòîâëåííÿ êàñåò) subband (åíåðãåòè÷íà) ï³äçîíà Hubbard’s ~ ï³äçîíà Õàááàðäà (â ìîäåë³ äîì³øêîâèõ ï³äçîí Õàááàðäà) quantum ~ êâàíòîâà ï³äçîíà subcollector ïðèõîâàíèé øàð êîëåêòîðà As ~ ïðèõîâàíèé øàð êîëåêòîðà, ñôîðìîâàíèé äèôó糺þ ìèø’ÿêó n+ buried ~ ïðèõîâàíèé n+-ñëîé êîëåêòîðà subetching ï³äòðàâëåííÿ sublattice ï³äãðàòîêêà sublayer ï³äøàðîâóé sublimation ñóáë³ìàö³ÿ, ñóáë³ìàö³ÿ light-induced ~ ôîòîñòèìóëþþ÷à ñóáë³ìàö³ÿ subminiaturization ì³êðîì³í³àòþðèçàö³ÿ substance ðå÷îâèíà; ìàòåð³àë oxidizing ~ îêèñëþâà÷ semiconductor ~ íàï³âïðîâ³äíèê starting ~ ïî÷àòêîâà (âèõ³äíà) ðå÷îâèíà; âèõ³äíèé ìàòåð³àë substrate ï³äêëàäêà; îñíîâà active ~ àêòèâíà ï³äêëàäêà amorphous insulating ~ àìîðôíà ³çîëþþ÷à ï³äêëàäêà
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sup blank ~ íåîáðîáëåíà ï³äêëàäêà; íåçìîíòîâàíà ï³äêëàäêà bulk ~ 1. ñóö³ëüíà (íàï³âïðîâ³äíèêîâà) ï³äêëàäêà 2. (íàï³âïðîâ³äíèêîâà) ï³äêëàäêà áåç åï³òàêñ³àëüíîãî øàðó composite ~ áàãàòîøàðîâà ï³äêëàäêà compound semiconductor ~ ï³äêëàäêà ç íàï³âïðîâ³äíèêîâîãî ç’ºäíàííÿ dislocation-free ~ ï³äêëàäêà ç áåçäèñëîêàö³éíîãî êðåìí³þ foreign ~ ï³äêëàäêà ç ÷óæîð³äíîãî ìàòåð³àëó (íàïð. â ãåòåðîñòðóêòóðàõ) garnet ~ ï³äêëàäêà ç ãðàíàòà glass-ñåramic ~ ñêëîêåðàì³÷íà ï³äêëàäêà glazed ~ ãëàçóðîâàíà ï³äêëàäêà, ï³äêëàäêà ç øàðîì ñêëà high-resistivity ~ âèñîêîîìíà ï³äêëàäêà implanted ~ ³îííî-³ìïëàíòîâàíà ï³äêëàäêà insulative ~ (åëåêòðî)³çîëÿö³éíà [ä³åëåêòðè÷íà] ï³äêëàäêà interconnection ~ ï³äêëàäêà ç øàðîì ì³æç’ºäíàíü ion-milled ~ ï³äêëàäêà, ï³ääàíà ³îííîìó ôðåçåðóâàííþ low-resistivity ~ íèçüêîîìíà ï³äêëàäêà mask ~ ï³äêëàäêà äëÿ ôîòîøàáëîíó ÌÐ ~ äèâ. multilayer printed substrate multilayer ~ áàãàòîøàðîâà ï³äêëàäêà multilayer printed ~ áàãàòîøàðîâà äðóêîâàíà ïëàòà n(-type)~ ï³äêëàäêà (ç åëåêòðîïðîâ³äí³ñòþ) n-òèïó passive ~ ïàñèâíà ï³äêëàäêà porcelainized steel ~ åìàëüîâàíà ñòàëåâà ï³äêëàäêà porous polishing ~ ïîðèñòà îñíîâà äëÿ ïîë³ðîâêè preloaded ~ ï³äêëàäêà ç³ âñòàíîâëåíèìè êîìïîíåíòàìè (ïåðåä ïàÿííÿì) prescreened ~ ï³äêëàäêà (òÑ) ç íàäðóêîâàíèìè ç’ºäíàííÿìè ³ êîíòàêòíèìè ìàéäàí÷èêàìè pretinned ~ ëóäæåíà ï³äêëàäêà printed-wiring ~ äðóêîâàíà ïëàòà p-type ~ ï³äêëàäêà (ç åëåêòðîïðîâ³äí³ñòþ) ð-òèïó silicon through-hole ~ êðåìí³ºâà ï³äêëàäêà ç êð³çíèìè îòâîðàìè
SOI ~ ä³åëåêòðè÷íà ï³äêëàäêà ç øàðîì êðåìí³þ, ï³äêëàäêà ³ç ñòðóêòóðîþ òèïó «êðåìí³é íà ä³åëåêòðèö³», ÊÍÄ-ï³äêëàäêà SOS ~ ñàïô³ðîâà ï³äêëàäêà ç øàðîì êðåìí³þ, ï³äêëàäêà ç ñòðóêòóðîþ òèïó «êðåìí³é íà ñàïô³ð³», ÊÍÑ-ï³äêëàäêà stepless ~ ï³äêëàäêà áåç ñõîäèíîê íà ïîâåðõí³; ï³äêëàäêà ç ïëîñêîþ ïîâåðõíåþ thick-film multilevel ~ ï³äêëàäêà ç áàãàòîð³âíåâèìè òîâñòîïë³âêîâèìè ç’ºäíàííÿìè thick-film screened ~ ï³äêëàäêà äëÿ òðàôàðåòíîãî äðóêó òîâñòèõ ïë³âîê thin-film ~ ï³äêëàäêà äëÿ òîíêîïë³âêîâèõ Ã²Ñ V-grooved (silicon) ~ (êðåìí³ºâà) ï³äêëàäêà ç V-ïîä³áíèìè êàíàâêàìè wiring ~ ï³äêëàäêà ç øàðîì ì³æç’ºäíàíü sunburst ðîçåòêà (íåð³âíîì³ðí³ñòü ïîêðèòòÿ íà ïîâåðõí³ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) superarray 1. íàäìàòðèöÿ; ìàòðè÷íà óëüòðàÂ²Ñ 2. íàäãðàòêà supercapacitor êîíäåíñàòîð âåëèêî¿ ºìíîñò³ superchip 1. ñóïåðêðèñòàë 2. ñóïåðâåëèêà ²Ñ, ÍÂ²Ñ supercomponent ñóïåðêîìïîíåíò (áàãàòîôóíêö³îíàëüíà ÂÃ²Ñ ÍÂ×-ä³àïàçîíó â êîðïóñ³) superconductivity íàäïðîâ³äí³ñòü bulk ~ îá’ºìíà íàäïðîâ³äí³ñòü high-Tc [high-temperature] ~ âèñîêîòåìïåðàòóðíà íàäïðîâ³äí³ñòü three-dimensional ~ òðèâèì³ðíà íàäïðîâ³äí³ñòü superconductor íàäïðîâ³äíèê alloy ~ ñïëàâíèé íàäïðîâ³äíèê Bi-based [bismuth-system] ~ â³ñìóòîâèé íàäïðîâ³äíèê fluorine-implanted bismuth îõide ~ íàäïðîâ³äíèê íà îñíîâ³ îêñèä³â â³ñìóòó ç ³ìïëàíòîâàíèì ôòîðîì high-critical temperature ~ íàäïðîâ³äíèê ç âèñîêîþ êðèòè÷íîþ òåìïåðàòóðîþ high-temperature ~ âèñîêîòåìïåðàòóðíèé íàäïðîâ³äíèê perovskite-related high Tc ~ âèñîêîòåìïåðàòóðíèé íàäïðîâ³äíèê íà îñíîâ³ ïåðîâñê³ò³â RVB ~ íàäïðîâ³äíèê ç ðåçîíàíñíèìè âàëåíòíèìè çâ’ÿçêàìè
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sym Tl-based ~ íàäïðîâ³äíèê íà îñíîâ³ òàë³ÿ warm ~ âèñîêîòåìïåðàòóðíèé íàäïðîâ³äíèê weak-coupled ~ ñëàáîçâ’ÿçàíèé íàäïðîâ³äíèê yttrium system ~ ³òð³ºâî-áàð³ºâèé íàäïðîâ³äíèê, íàäïðîâ³äíèê òèïó 1-2-3 superintegration 1. ñóïåð³íòåãðàö³ÿ (ìåòîä ïðîåêòóâàííÿ ñïåö³àë³çîâàíèõ ͲÑ) 1. ñóïåðÁ²Ñ ç âáóäîâàíèì ì³êðîïðîöåñîðîì superlattice íàäãðàòêà disordered ~ ðîçâïîðÿäêîâàíà íàäãðàòêà doping-modulated ~ ìîäóëÿö³éíî-ëåãîâàíà íàäãðàòêà lateral ~ ëàòåðàëüíà ïîâåðõíåâà íàäãðàòêà metal-insulator ~ íàäãðàòêà íà îñíîâ³ ìåòàëåâèõ ³ ä³åëåêòðè÷íèõ øàð³â modulation ~ ìîäóëÿö³éíî-ëåãîâàíà íàäãðàòêà N-layered ~ íàäãðàòêà ç n-÷èñëà øàð³â planar ~ ïëàíàðíà íàäãðàòêà quantum wire ~ íàäãðàòêà êâàíòîâèõ äðîò³â semiconductor ~ íàï³âïðîâ³äíèêîâà íàäãðàòêà short period ~ íàäãðàòêà ç êîðîòêèì ïåð³îäîì silicon-germanium ~ íàäãðàòêà íà îñíîâ³ øàð³â Si–Gå íà êðåìí³¿ strained layer ~ íàäãðàòêà ç íàïðóæåíèìè øàðàìè superposition (ïîñë³äîâíå) ôîðìóâàííÿ øàð³â support: beam-lead ~ ï³äêëàäêà ç áàëî÷íèìè âèâîäàìè design ~ àïàðàòí³ çàñîáè ï³äòðèìêè ïðîöåñó ïðîåêòóâàííÿ glass ~ ñêëÿíà ï³äêëàäêà hierarchical ~ àïàðàòí³ çàñîáè ï³äòðèìêè ³ºðàðõ³÷íîãî ïðîåêòóâàííÿ LSI ~ ïåðèôåð³éíà Â²Ñ teflon ~ òåôëîíîâèé [ôòîðîïëàñòîâèé] óòðèìóâà÷; òåôëîíîâà [ôòîðîïëàñòîâà] êàñåòà surface ïîâåðõíÿ atomically rough ~ ïîâåðõíÿ, ùî ìຠøîðñòê³ñòü ïîðÿäêó îäíîãî àòîìíîãî øàðó edge ~ êðàéîâà [ïåðèôåð³éíà] ïîâåðõíÿ epitaxial ~ ïîâåðõíÿ åï³òàêñ³àëüíîãî øàðó exposed ~ 1. ðîçêðèòà [â³äêðèòà] ïîâåðõíÿ 2. åêñïîíîâàíà ïîâåðõíÿ
Fermi ~ ïîâåðõíÿ Ôåðì³ micro-cleaned ~ íàä÷èñòà ïîâåðõíÿ mounting ~ ìîíòàæíà ïîâåðõíÿ n-type ~ ïîâåðõíÿ (ç åëåêòðîïðîâ³äí³ñòþ) n-òèïó peripheral ~ êðàéîâà [ïåðèôåð³éíà] ïîâåðõíÿ planar ~ 1. ïëîñêà ïîâåðõíÿ 2. ïîâåðõíÿ ïëàíàðíîãî íàï³âïðîâ³äíèêîâîãî ïðèëàäó p-type ~ ïîâåðõíÿ (ç åëåêòðîïðîâ³äí³ñòþ) ð-òèïó surface-mount ïîâåðõíåâèé ìîíòàæ | ïðîâîäèòè ïîâåðõíåâèé ìîíòàæ susceptance ðåàêòèâíà ïðîâ³äí³ñòü susceptibility 1. ñïðèéíÿòëèâ³ñòü 2. ÷óòëèâ³ñòü alpha-radiation ~ ÷óòëèâ³ñòü äî àëüôàâèïðîì³íþâàííÿ susceptor îñíîâà; óòðèìóâà÷ (äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí â åï³òàêñ³àëüíîìó ðåàêòîð³) suspension 1. ñóñïåíç³ÿ 2. ï³äâ³ñêè swapping: program ~ ïåðåêà÷óâàííÿ ïðîãðàìè swelling ðîçáóõàííÿ, çá³ëüøåííÿ â îá’ºì³ (íàïð. ôîòîðåçèñòà); ñïó÷óâàííÿ swing: logic ~ ïåðåïàä ëîã³÷íèõ ð³âí³â signal ~ ðîçìàõ ñèãíàëó; àìïë³òóäà ñèãíàëó voltage ~ ðîçìàõ íàïðóãè switch êîìóòàòîð; ïåðåìèêà÷ | êîìóòóâàòè; ïåðåìèêàòè binary ~ äâ³éêîâèé ïåðåìèêà÷ crosspoint ~ êîîðäèíàòíèé ïåðåìèêà÷ electronic ~ åëåêòðîííèé ïåðåìèêà÷; åëåêòðîííèé êëþ÷ FET ~ ïåðåìèêà÷ íà ïîëüîâèõ òðàíçèñòîðàõ Hall-effect ~ ïåðåìèêà÷ íà åôåêò³ Õîëëà latching ~ ïåðåìèêà÷ ç óòðèìóâàííÿì logic ~ ëîã³÷íèé êëþ÷; ëîã³÷íà ñõåìà ïåðåìèêà÷à semiconductor ~ íàï³âïðîâ³äíèêîâèé ïåðåìèêà÷; íàï³âïðîâ³äíèêîâèé êëþ÷ Shockley-diode ~ ïåðåìèêà÷ íà ä³îäàõ Øîêë³ transistor ~ òðàíçèñòîðíèé ïåðåìèêà÷ switching êîìóòàö³ÿ; ïåðåìèêàííÿ ultrafast ~ íàäøâèäê³ñíå [íàäøâèäêîä³þ÷å] ïåðåìèêàííÿ symbol: generic ~ õàðàêòåðíèé ñèìâîë
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sys logic ~ ëîã³÷íèé ñèìâîë; ëîã³÷íèé çíàê printed layout ~ äðóêàðñüêèé çíàê äëÿ òîïîëîã³÷íèõ êðåñëåíü schematic ~ óìîâíå ïîçíà÷åííÿ symbology: logic ~ óìîâí³ ïîçíà÷åííÿ ëîã³÷íèõ åëåìåíò³â sympton: error ~ îçíàêà ïîìèëêè (íåñï³âïàäàííÿ î÷³êóâàíî¿ ³ ðåàëüíî¿ ðåàêö³é ²Ñ) synchrotron ñèíõðîòðîí compact ~ êîìïàêòíèé ñèíõðîòðîí normal-conducting ~ ñèíõðîòðîí ç íåíàäïðîâ³äíèìè ìàãí³òàìè synthesis ñèíòåç automated layout ~ àâòîìàòèçîâàíèé ñèíòåç òîïîëî㳿 circuit design ~ ñèíòåç ïðîåêòó ñõåìè functional ~ ôóíêö³îíàëüíèé ñèíòåç image ~ ñèíòåç çîáðàæåíü laser-induced ~ ëàçåðíî-ñòèìóëþþ÷èé ñèíòåç logic ~ ëîã³÷íèé ñèíòåç random logic ~ ñèíòåç íà îñíîâ³ äîâ³ëüíî¿ ëîã³êè standard ñåll ~ ñèíòåç (²Ñ) ç âèêîðèñòàííÿì ñòàíäàðòíèõ êîì³ðîê structured ~ ñòðóêòóðíèé ñèíòåç synthesizer: speech [voice] ~ ñèíòåçàòîð ìîâè syringe øïðèö (íàïð. äëÿ íàíåñåííÿ ïàñòè àáî êëåþ) \ øïð³öóâàòè system 1. ñèñòåìà 2. óñòàíîâêà; ïðèñòð³é air-track wafer transport ~ ñèñòåìà òðàíñïîðòóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí íà ïîâ³òðÿí³é ïîäóøö³ assembly ~ ñêëàäàëüíî-ìîíòàæíà óñòàíîâêà autolayout ~ ñèñòåìà àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ òîïîëî㳿 automated àñcounting ~ àâòîìàòèçîâàíà ñèñòåìà ñêëàäàííÿ çâ³ò³â automated photomask(ing)~ 1. àâòîìàòèçîâàíà ñèñòåìà îáðîáêè ôîòîë³òîãðàô³¿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí 2. àâòîìàòèçîâàíà ñèñòåìà âèãîòîâëåííÿ øàáëîí³â automatic data àñquisition ~ àâòîìàòè÷íà ñèñòåìà çáîðó äàíèõ automatic data analysis ~ àâòîìàòè÷íà ñèñòåìà àíàë³çó äàíèõ
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automatic data digitizing ~ àâòîìàòè÷íà ñèñòåìà öèôðîâîãî ïåðåòâîðåííÿ äàíèõ base-metal ~ ñèñòåìà ïàñò íà îñíîâ³ íåáëàãîðîäíèõ ìåòàë³â (äëÿ òîâñòîïë³âêîâîþ òåõíîëî㳿) batch ~ óñòàíîâêà ãðóïîâî¿ îáðîáêè (íàïð. íàï³âïðîâ³äíèêîâèõ ïëàñòèí) bi-etching ~ óñòàíîâêà ïîäâ³éíîãî òðàâëåííÿ bubble test ~ áóëüáàøêîâèé âòðàòîøóêà÷ (äëÿ ïåðåâ³ðêè êîðïóñ³â) building-block layout ~ ñèñòåìà ïðîåêòóâàííÿ òîïîëî㳿 íà îñíîâ³ ñòàíäàðòíèõ áëîê³â CAD ~ äèâ. computer-aided design system cassette-to-cassette ~ ñèñòåìà (ì³æîïåðàö³éíî¿) òðàíñïîðòóâàííÿ òèïó «ç êàñåòè â êàñåòó» chopping ~ ñèñòåìà ïåðåðèâàííÿ, ñòðîáîñêîï³÷íà ñèñòåìà closed-tube îõidation-diffusion ~ ñèñòåìà ïðîâåäåííÿ äèôó糿 ³ îêñèäóâàííÿ ïî ìåòîäó çàêðèòî¿ òðóáè code-translation data ~ ñèñòåìà ïåðåäà÷³ äàíèõ ç òðàíñëÿö³ºþ êîä³â command retrieval ~ ñèñòåìà âèêëèêó êîìàíä computer-aided design ~ ñèñòåìà àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ, ÑÀÏÐ conductor (paste) ~ ñèñòåìà ïàñò äëÿ ôîðìóâàííÿ òîâñòî-ïë³âêîâèõ ïðîâ³äíèê³â continuous stage motion e-beam ~ óñòàíîâêà åëåêòðîííî-ïðîìåíåâî¿ ë³òîãðàô³¿ ç ïîñë³äîâíèì åêñïîíóâàííÿì (ç áåçïåðåðâíèì ïåðåì³ùåííÿì êîîðäèíàòíîãî ñòîëó) Czochralski production ~ óñòàíîâêà äëÿ âèðîùóâàííÿ êðèñòàë³â ìåòîäîì ×îõðàëüñüêîãî damage tolerant ~ â³äìîâîñò³éêà ñèñòåìà data àñquisition and display ~ ñèñòåìà çáîðó ³ â³äîáðàæåííÿ äàíèõ data analysis and reduction ~ ñèñòåìà àíàë³çó ³ ñòèñíåííÿ äàíèõ data collection and processing ~ ñèñòåìà çáîðó ³ îáðîáêè äàíèõ decision data support ~ ñèñòåìà ï³äòðèìêè äàíèõ äëÿ óõâàëåííÿ ð³øåíü decision-support ~ ñèñòåìà ï³äòðèìêè óõâàëåííÿ ð³øåíü
sys deep-UV projection ~ óñòàíîâêà ïðîåêö³éíî¿ ôîòîë³òîãðàô³¿ ç äæåðåëîì äàëüíüîãî óëüòðàô³îëåòîâîãî âèïðîì³íþâàííÿ design automation ~ ñèñòåìà àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ, ÑÀÏÐ die attach ~ óñòàíîâêà äëÿ ìîíòàæó êðèñòàë³â (íàïð. íà ïëàò³ òÑ) dielectric (paste) ~ ñèñòåìà ïàñò äëÿ ôîðìóâàííÿ ä³åëåêòðè÷íèõ øàð³â diffusion ~ äèôóç³éíà ï³÷ direct step-on-wafer ~ óñòàíîâêà ïðÿìî¿ ïðîåêö³éíî¿ ë³òîãðàô³¿ ç ïîñë³äîâíèì êðîêîâèì åêñïîíóâàííÿì direct-write e-beam ~ óñòàíîâêà åëåêòðîííî-ïðîìåíåâî¿ ë³òîãðàô³¿ ç áåçïîñåðåäí³ì ôîðìóâàííÿì ìàëþíêà íà ïëàñòèö³ dopant ~ ñèñòåìà ëåãóþ÷èõ äîì³øîê double-chamber vacuum-deposition ~ äâîêàìåðíà óñòàíîâêà òåðìîâàêóóìíîãî îñàäæåííÿ double-track ~ äâîõêîíâåéºðíà ñèñòåìà (íàïð., àâòîìàòèçîâàíî¿ îáðîáêè ôîòîë³òîãðàô³¿) electron-beam mask ~ åëåêòðîííîïðîìåíåâà óñòàíîâêà äëÿ âèãîòîâëåííÿ ôîòîøàáëîí³â electron-beam projection ~ óñòàíîâêà åëåêòðîííî-ïðîìåíåâî¿ ïðîåêö³éíî¿ ë³òîãðàô³¿ encapsulation welding ~ çâàðþâàëüíà óñòàíîâêà äëÿ ãåðìåòèçàö³¿ êîðïóñ³â epitaxial (growth) ~ óñòàíîâêà åï³òàêñ³àëüíîãî âèðîùóâàííÿ åðîõó dispensing ~ ïðèñòð³é äëÿ äîÇÏâàííÿ åïîêñèäíî¿ ñìîëè etchant regeneration ~ óñòàíîâêà ðåãåíåðàö³¿ òðàâíèêà etching ~ óñòàíîâêà òðàâëåííÿ etch/strip ~ óñòàíîâêà òðàâëåííÿ ³ çíÿòòÿ îêñèäó evaporation ~ óñòàíîâêà äëÿ íàïèëåííÿ, óñòàíîâêà òåðìîâàêóóìíîãî âèïàðîâóâàííÿ exposure ~ óñòàíîâêà ë³òîãðàô³¿; óñòàíîâêà ôîòîë³òîãðàô³¿ fabrication ~ òåõíîëîã³÷íà óñòàíîâêà; òåõíîëîã³÷íå óñòàòêóâàííÿ fault-tolerant ~ â³äìîâîñò³éêà ñèñòåìà
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flex-fab [flexible machining] ~ ãíó÷êà àâòîìàòèçîâàíà ñèñòåìà, ÃÀÑ; ãíó÷êà âèðîáíè÷à ñèñòåìà, ÃÂÑ fly’s eye ~ áàãàòîë³íçîâà ôîòîêàìåðà (äëÿ ìóëüòèïë³êàö³¿ îðèã³íàë³â ôîòîøàáëîí³â) gate-array layout ~ ñèñòåìà ïðîåêòóâàííÿ òîïîëî㳿 íà îñíîâ³ ëîã³÷íî¿ ìàòðèö³ Gaussian-beam e-beam ~ óñòàíîâêà åëåêòðîííî-ïðîìåíåâî¿ ë³òîãðàô³¿ ç òî÷êîâèì ïðîìåíåì Genesil ~ ô³ðì. êðåìí³ºâèé êîìï³ëÿòîð graphite furnace atomic absorption ~ óñòàíîâêà àòîìíî¿ àáñîðáö³¿ ç ãðàô³òíîþ ï³÷÷þ (äëÿ ì³êðîàíàë³ÇÏ øàð³â äîì³øêè) hierarchically [hierarchical-oriented] CAD ~ ÑÀÏÐ, ÿêà ï³äòðèìóº ³ºðàðõ³÷íå ïðîåêòóâàííÿ Â²Ñ high-resolution electron-beam ~ åëåêòðîííî-ïðîìåíåâà óñòàíîâêà ç âèñîêèì äîçâîëîì IC ~ ²Ñ ç âèñîêèì ñòóïåíåì ³íòåãðàö³¿, âåëèêà ²Ñ, ²Ñ; íàäâåëèêà ²Ñ, ÍÂ²Ñ image projection ~ óñòàíîâêà ïðîåêö³éíî¿ ë³òîãðàô³¿ indexing ~ ìåõàí³çì êîîðäèíàòíî¿ ïîäà÷³ ink ~ ñèñòåìà ïàñò (äëÿ òîâñòîïë³âêîâîþ òåõíîëî㳿 òÑ) in-line ~ 1. ñèñòåìà ïîòîêîâî¿ òåõíîëîã³÷íî¿ îáðîáêè 2. ïîòîêîâà òåõíîëîã³÷íà ë³í³ÿ integrated programmable gate-array ~ ïðîãðàìîâàíà Â²Ñ íà îñíîâ³ ìàòðèö³ ëîã³÷íèõ åëåìåíò³â ion-beam ~ óñòàíîâêà ³îííî-ïðîìåíåâî¿ ë³òîãðàô³¿ m: ion-beam sputtering ~ óñòàíîâêà ³îííîïðîìåíåâîãî ðîçïèëþâàííÿ isoplanar ~ ²Ñ, âèãîòîâëåíà çà ³çîïëàíàðíîþ òåõíîëî㳺þ laminar-flow ~ ñèñòåìà ç ëàì³íàðíèì ïîòîêîì lead-forming ~ óñòàíîâêà äëÿ ôîðìóâàííÿ âèâîä³â lead-frame assembly ~ óñòàíîâêà äëÿ çá³ðêè ²Ñ íà âèâ³äíèõ ðàìêàõ lithographic [lithography] ~ óñòàíîâêà ë³òîãðàô³¿; óñòàíîâêà ôîòîë³òîãðàô³¿ logic analysis ~ ñèñòåìà àíàë³çó ëîã³÷íèõ ñõåì; ñèñòåìà ïåðåâ³ðêè ²Ñ ³ ëîã³÷íèõ ìàòðèöü ç âèêîðèñòàííÿì çîâí³øíüî¿ ëîã³êè
sys logic synthesis ~ ñèñòåìà ëîã³÷íîãî ñèíòåçó mask alignment and exposure ~ óñòàíîâêà ñóì³ùåííÿ ³ åêñïîíóâàííÿ; óñòàíîâêà ôîòîë³òîãðàô³¿ metal ~ 1. ìåòàëåâà ñèñòåìà (íàïð. äëÿ ì³æç’ºäíàíü) 2. ñèñòåìà ñïîëó÷íî¿ ìåòàë³çàö³¿ metallization ~ ñèñòåìà ñïîëó÷íî¿ ìåòàë³çàö³¿ Micralign ~ óñòàíîâêà åëåêòðîííîïðîìåíåâî¿ ë³òîãðàô³¿ micropower ~ ì³êðîïîòóæíà ²Ñ; ì³êðîìîãóòíÿ ³íòåãðàëüíà ñèñòåìà multichip ~ áàãàòîêðèñòàëüíà âåëèêà òÑ; áàãàòîêðèñòàëüíà ³íòåãðàëüíà ñèñòåìà multicircuit microprocessor ~ áàãàòîêðèñòàëüíèé ì³êðîïðîöåñîðíèé êîìïëåêò; áàãàòîêðèñòàëüíà ì³êðîïðîöåñîðíà ñèñòåìà multiple-tens camera ~ áàãàòîë³íçîâà ôîòîêàìåðà (äëÿ ìóëüòèïë³êàö³¿ îðèã³íàë³â ôîòîøàáëîí³â) negative-resist ~ ñèñòåìà íåãàòèâíèõ ðåçèñò³â; íåãàòèâí³ ðåçèñòè non-real-time data automation ~ ñèñòåìà àâòîìàòè÷íî¿ îáðîáêè äàíèõ íå â ðåàëüíîìó ÷àñ³ one-step t-fault diagnosable ~ ñèñòåìà, ïðèäàòíà äî ä³àãíîñòèêè t-íåñïðàâíîñòåé çà îäèí öèêë ðîáîòè ïðîãðàìè one-to-one scanning ~ óñòàíîâêà ñêàíóþ÷î¿ ïðîåêö³éíî¿ ë³òîãðàô³¿ áåç ìàñøòàáóâàííÿ on-line circuit analysis ~ ñèñòåìà àíàë³çó ñõåì â ðåàëüíîìó ÷àñ³ on-line circuit design ~ ñèñòåìà ïðîåêòóâàííÿ ñõåì â ðåàëüíîìó ÷àñ³ open-ended CAD ~ ÑÀÏÐ ç ìîæëèâîñòÿìè ðîçøèðåííÿ open-tube ~ ñèñòåìà ïðîâåäåííÿ äèôó糿 ïî ìåòîäó â³äêðèòî¿ òðóáè palladium-silver (thick-film) conductor ~ ñèñòåìà ïàñò íà îñíîâ³ ïàëàä³þ ³ ñð³áëà äëÿ òîâñòîïë³âêîâèõ Ã²Ñ paste ~ ñèñòåìà ïàñò (äëÿ òîâñòîïë³âêîâîþ òåõíîëî㳿) photomasking ~ 1. êîìïëåêò óñòàòêóâàííÿ äëÿ âèãîòîâëåííÿ ôîòîøàáëîí³â 2. óñòàíîâêà ôîòîë³òîãðàô³¿ photorepeating ~ ôîòîïîâòîðþâà÷, ôîòîøòàìï
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pick-and-place ~ óñòàíîâêà ìîíòàæó (ì³êðîêîìïîíåíò³â) ç âàêóóìíèìè ñõîïëþþ÷èìè ³ ïîçèö³îíóþ÷èìè ïðèñòðîÿìè planar plasma ~ ïëàíàðíèé ðåàêòîð ïëàçìîâîãî òðàâëåííÿ plenum flush ~ óñòàíîâêà ñòðóìåíåâî¿ ïðîìèâêè portable CAD ~ ìîá³ëüíà ÑÀÏÐ positive resist ~ ñèñòåìà ïîçèòèâíèõ ðåçèñò³â; ïîçèòèâí³ ðåçèñòè preinsertion processing ~ óñòàíîâêà äëÿ ï³äãîòîâêè êîìïîíåíò³â äî ìîíòàæó printed-circuit (board) assembly ~ óñòàíîâêà äëÿ çá³ðêè äðóêîâàíî¿ ïëàò³ probing ~ çîíäîâà âèì³ðþâàëüíà óñòàíîâêà processing ~ óñòàíîâêà òåõíîëîã³÷íî¿ îáðîáêè; óñòàòêóâàííÿ äëÿ òåõíîëîã³÷íî¿ îáðîáêè production ~ ïðîìèñëîâà óñòàíîâêà; òåõíîëîã³÷íå óñòàòêóâàííÿ projection (printing) ~ óñòàíîâêà ïðîåêö³éíî¿ ë³òîãðàô³¿ quick vacuum ~ âèñîêîïðîäóêòèâíà âàêóóìíà óñòàíîâêà reducing electron (-beam) projection ~ óñòàíîâêà åëåêòðîííî-ïðîìåíåâî¿ ïðîåêö³éíî¿ ë³òîãðàô³¿ ³ç çìåíøåííÿì çîáðàæåííÿ reflow soldering ~ óñòàíîâêà ïàÿííÿ ³ îïëàâëåííÿ ïðèïîþ rinser/dryer ~ óñòàíîâêà ïðîìèâêè ³ ñóøêè (íàï³âïðîâ³äíèêîâèõ ïëàñòèí) screen printing ~ óñòàíîâêà òðàôàðåòíîãî äðóêó scribing ~ ñêðàéáåð, óñòàíîâêà äëÿ ñêðàéáóâàííÿ self-documenting CAD ~ ÑÀÏÐ ùî ñàìîäîêóìåíòóºòüñÿ self-repair, ~ ñèñòåìà, ùî ñàìîâ³äíîâëþºòüñÿ sequentially t-fault diagnosable ~ ñèñòåìà, ïðèäàòíà äî ïîñë³äîâíî¿ ä³àãíîñòèêè tíåñïðàâíîñòåé shaped-beam e-beam ~ óñòàíîâêà åëåêòðîííî-ïðîìåíåâî¿ ë³òîãðàô³¿ ³ç çì³ííèì ïåðåòèíîì åëåêòðîííîãî ïðîìåíÿ single-chip ~ îäíîêðèñòàëüíà ÍÂ²Ñ SMIF ~ ñèñòåìà ³ç ñòàíäàðòíèì ìåõàí³÷íèì ³íòåðôåéñîì
tab software test-bed ~ ñèñòåìà òåñòóâàííÿ vector-scan e-beam ~ óñòàíîâêà åëåêòðîííîïðîãðàì ïðîìåíåâî¿ ë³òîãðàô³¿ ç âåêòîðíèì solder evacuation ~ ïðèñòð³é äëÿ ñêàíóâàííÿì â³äñìîêòóâàííÿ (ðîçïëàâëåíîãî) ïðèïîþ wafer gaging ~ óñòàíîâêà äëÿ êîíòðîëþ ³ solder fusion ~ óñòàíîâêà ïàÿííÿ ñîðòóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí îïëàâëåííÿì ïðèïîþ (âèì³ðþþòüñÿ òîâùèíà, split-chamber vacuum coating ~ ïëîñêîïàðàëåëüí³ñòü ³ ïèòîìèé îï³ð) íàïèëþâàëüíà óñòàíîâêà ç äâîêàìåðíèì wafer routing ~ óñòàíîâêà äëÿ òðàñóâàííÿ âàêóóìíèì îá’ºìîì ç’ºäíàíü íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ split-field alignment ~ ñèñòåìà îïòè÷íîãî wafer-scale ~ (åëåêòðîííà) ñèñòåìà íà ö³ë³é ïîºäíàííÿ ç ðîçùåïëåíèì ïîëåì íàï³âïðîâ³äíèêîâ³é ïëàñòèí³; ²Ñ íà ö³ë³é step-and-repeat ~ 1. ôîòîïîâòîðþâà÷, íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ ôîòîøòàìï 2. óñòàíîâêà ïðîåêö³éíî¿ wafer-stepper projection ~ óñòàíîâêà ë³òîãðàô³¿ ç ïîñë³äîâíèì êðîêîâèì ïðîåêö³éíî¿ ë³òîãðàô³¿ ç ïîñë³äîâíèì åêñïîíóâàííÿì êðîêîâèì åêñïîíóâàííÿì step-and-repeat photomask ~ wave solder ~ óñòàíîâêà ïàÿííÿ õâèëåþ ôîòîïîâòîðþâà÷, ôîòîøòàìï ïðèïîþ step-on-wafer projection ~ óñòàíîâêà wiring ~ 1. ñèñòåìà ç’ºäíàíü (íàïð. â ²Ñ) ïðîåêö³éíî¿ ë³òîãðàô³¿ ç ïîñë³äîâíèì 2. óñòàíîâêà äëÿ ìîíòàæó; óñòàíîâêà äëÿ êðîêîâèì åêñïîíóâàííÿì ôîðìóâàííÿ ç’ºäíàíü surface measurement ~ óñòàíîâêà X-ray exposure ~ óñòàíîâêà ðåíòãåí³âñüêî¿ âèì³ðþâàííÿ ïëîùèííî¿ ³ êîíóñíîñò³ ë³òîãðàô³¿, óñòàíîâêà ðåíòãåíîë³òîãðàô³¿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí system-on-à-chip ³íòåãðàëüíà ñèñòåìà, terminal point detection ~ ïðèñòð³é äëÿ ñèñòåìà íà êðèñòàë³ âèçíà÷åííÿ ìîìåíòó çàê³í÷åííÿ (òåõíîëîã³÷íî¿) îïåðàö³¿ T thermal mapping ~ ïðèëàä äëÿ çíÿòòÿ òåðì³÷íîãî ðåëüºôó (ïîâåðõí³ ²Ñ) tab êîíòàêò; ñòîâï÷èêîâèé âèâ³ä, êîíòàêòíèé thick-film resistor ~ ñèñòåìà ïàñò äëÿ ñòîâï÷èê òîâñòîïë³âêîâèõ ðåçèñòîð³â base ring ~ ê³ëüöåâèé áàçîâèé êîíòàêò transfer [transport] ~ ïðèñòð³é äëÿ table 1. òàáëèöÿ 2. êîîðäèíàòíèé ñò³ë (ì³æîïåðàö³éíî¿) òðàíñïîðòóâàííÿ channel status ~ òàáëèöÿ ñòàíó êàíàëó tri-metal ~ 1. ñèñòåìà ìåòàë³çàö³¿ ç òðüîõ continuous ~ êîîðäèíàòíèé ñò³ë ç ìåòàë³â 2. (ìåòàëåâà) ñèñòåìà ç òðüîõ áåçïåðåðâíèì (íåêðîêîâèì) ïåðåì³ùåííÿì ìåòàë³â coordinate ~ êîîðäèíàòíèé ñò³ë trimming ~ óñòàíîâêà äëÿ ï³äãîíêè drafting ~ êðåñëÿðñüêà òàáëèöÿ turnkey CAD ~ ÑÀÏÐ, ïîâí³ñòþ ãîòîâà äî fan-in ~ òàáëè÷íà ôîðìà ïðåäñòàâëåííÿ âèêîðèñòàííÿ âõ³äíèõ ñèãíàë³â ëîã³÷íèõ åëåìåíò³â ³ UV exposure ~ óñòàíîâêà ë³òîãðàô³¿ ç ôóíêö³îíàëüíèõ áëîê³â âèêîðèñòàííÿì óëüòðàô³îëåòîâîãî [ÓÔfan-out ~ òàáëè÷íà ôîðìà ïðåäñòàâëåííÿ ]âèïðîì³íþâàííÿ âèõ³äíèõ ñèãíàë³â ëîã³÷íèõ åëåìåíò³â ³ vacuum-deposition ~ óñòàíîâêà ôóíêö³îíàëüíèõ áëîê³â òåðìîâàêóóìíîãî îñàäæåííÿ ïë³âîê plotting ~ ïëàíøåòíèé ãðàô³÷íèé ïðèñòð³é; vacuum purge ~ óñòàíîâêà äëÿ ïðîìèâêè ³ ïëàíøåòíèé êîîðäèíàòîãðàô î÷èùåííÿ âàêóóìíèõ ñèñòåì positioning ~ ïîçèö³íóþ÷èé ñò³ë, ñò³ë äëÿ variable-shaped electron-beam exposure ~ ïîçèö³îíóâàííÿ (íàïð. â óñòàíîâö³ óñòàíîâêà åëåêòðîííî-ïðîìåíåâî¿ òåðìîêîìïðåñ³éíî¿ çâàðêè) ë³òîãðàô³¿ ³ç çì³ííèì ïåðåòèíîì singular cover ~ òàáëèöÿ âèðîäæåíèõ åëåêòðîííîãî ïðîìåíÿ ïîêðèòò³â
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tec step-and-repeat ~ 1. êîîðäèíàòíèé ñò³ë ç êðîêîâèì ïåðåì³ùåííÿì 2. ñò³ë [îñíîâà] ôîòîïîâòîðþâà÷à stepping ~ êîîðäèíàòíèé ñò³ë ç êðîêîâèì ïåðåì³ùåííÿì truth ~ òàáëèöÿ ³ñòèííîñò³ vibration-isolated ~ êîîðäèíàòíèé ñò³ë ç â³áðî³çîëÿö³ºþ õ-ó ~ êîîðäèíàòíèé ñò³ë tablet ïëàíøåò tailing: band-edge [band-end] ~ óòâîðåííÿ «õâîñò³â» ãóñòèíè ñòàí³â íà ìåæ³ çîíè, ðîçìèòòÿ êðàþ çîíè tailoring ï³äãîíêà; ï³äñòðîþâàííÿ ~ edge profile ï³äãîíêà êðàéîâîãî ïðîô³ëþ channel ~ ï³äãîíêà êàíàëó field ~ ï³äñòðîþâàííÿ ïîëÿ talk: cross ~ (ïåðåõðåñí³) ïåðåøêîäè; (ïåðåõðåñíà) íàâåäåííÿ tangent: dielectric loss ~ òàíãåíñ êóòà ä³åëåêòðè÷íèõ âòðàò tank: etch ~ òðàâèëüíà âàííà tap â³äâåäåííÿ; â³äãàëóæåííÿ | â³äâîäèòè; â³äãàëóæóâàòè tape 1. ñòð³÷êîâèé íîñ³é (âèâ³äíèõ ðàìîê) 2. ñòð³÷êà assembly ~ 1. ñòð³÷êîâèé íîñ³é ç âèâ³äíèìè ðàìêàìè 2. ìîíòàæíà ñòð³÷êà beam ~ ñòð³÷êîâèé íîñ³é ç áàëî÷íèìè âèâîäàìè blister ~ ñòð³÷êîâèé íîñ³é ç ïðîçîðèìè ãí³çäàìè (ç êîìïîíåíòàìè ïîâåðõíåâîãî ìîíòàæó) bumped ~ ñòð³÷êîâèé íîñ³é ³ç ñòîâï÷èêîâèìè âèâîäàìè carrier ~ ñòð³÷êîâèé íîñ³é checkout ~ êîíòðîëüíà (ìàãí³òíà) ñòð³÷êà compliant bonding ~ ãíó÷êèé ñòð³÷êîâèé íîñ³é äëÿ ìîíòàæó êðèñòàë³â interconnect ~ 1. ñòð³÷êîâèé íîñ³é ç âèâ³äíèìè ðàìêàìè 2. ìîíòàæíà ñòð³÷êà lead ~ ñòð³÷êà äëÿ óïàêîâêè âèâîä³â (íàïð. ðåçèñòîð³â) masking ~ ìàñêóþ÷à ñòð³÷êà test ~ ìàãí³òíà ñòð³÷êà ç ïðîãðàìîþ äëÿ âèïðîáóâàëüíî¿ óñòàíîâêè
transport ~ ñòð³÷êîâèé íîñ³é taper: etch ~ êëèí òðàâëåííÿ taping âêëåþâàííÿ êîìïîíåíò³â â ñòð³÷êó; óïàêîâêà êîìïîíåíò³â â ñòð³÷êó target: diode array ~ ì³øåíü íà ä³îäí³é ìàòðèö³ sputtering ~ ì³øåíü óñòàíîâêè äëÿ ðîçïèëþâàííÿ targeting: crosshair ~ ïîçèö³îíóâàííÿ (åëåìåíòó ²Ñ) çà äîïîìîãîþ ïåðåõðåñòÿ tarnish: silver ~ ïîòüìÿí³ííÿ ñð³áëà technique 1. ìåòîä, ñïîñ³á (äèâ. ò-æ àðproach, method) 2. òåõíîëîã³ÿ (äèâ. ò-æ technology) alloy-diffusion [alloying] ~ ìåòîä ñïëàâó, ìåòîä âïëàâëåííÿ annular sawing ~ ìåòîä ð³çàííÿ (íàï³âïðîâ³äíèêîâèõ çëèòê³â) äèñêîâèìè ïèëàìè ç âíóòð³øíüîþ ð³æó÷îþ êðîìêîþ assembly ~ 1. ìåòîä çá³ðêè 2. òåõíîëîã³ÿ çá³ðêè automatic layout ~ àâòîìàòè÷íèé ìåòîä ðîçðîáêè òîïîëî㳿 automatic test generation ~ ìåòîä àâòîìàòè÷íî¿ ãåíåðàö³¿ òåñò³â BIMOS ~ êîìá³íîâàíà òåõíîëîã³ÿ ²Ñ íà á³ïîëÿðíèõ ³ ÌÎÍ-òðàíçèñòîðàõ bond etchback ~ ìåòîä ç’ºäíàííÿ ³ ï³äáóðþâàííÿ (äâîõ êðåìí³ºâèõ ïëàñòèí äëÿ âèãîòîâëåííÿ ͲÑ) bump-metallization ~ ìåòîä ìåòàë³çàö³¿ äëÿ ôîðìóâàííÿ ñòîâï÷èêîâèõ âèâîä³â CAD ~ ìåòîä àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ GDI ~ äèâ. collector-diffusion isolation technique chip floorplan ~ ìåòîä áàçîâîãî ïëàíó êðèñòàëà chip processing ~ ìåòîä îáðîáêè êðèñòàë³â ²Ñ íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ circuit ~ ñõåìîòåõí³êà CMOS ~ òåõíîëîã³ÿ êîìïëåìåíòàðíèõ ÌÎÍ ²Ñ, òåõíîëîã³ÿ ÊÌÎÍ ²Ñ cold-crucible ~ ìåòîä âèðîùóâàííÿ êðèñòàë³â ç âèêîðèñòàííÿì õîëîäíîãî òèãëÿ (íàïð. ìåòîä ×îõðàëüñüêîãî) cold-processing ~ ìåòîä íèçüêîòåìïåðàòóðíî¿ îáðîáêè
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tec collector-diffusion isolation ~ ìåòîä ³çîëÿö³¿ (åëåìåíò³â ²Ñ) äèôó糺þ êîëåêòîðà commutating auto-zeroing ~ ìåòîä êîìóòàö³éíî¿ àâòîêîðåêö³¿ íóëÿ (â îïåðàö³éíèõ ï³äñèëþâà÷àõ) computerized design ~ ìåòîä àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ CVD ~ ìåòîä õ³ì³÷íîãî îñàäæåííÿ ç ïàðîâî¿ ôàçè decomposition ~ ìåòîä äåêîìïîçèö³õ, ìåòîä ðîçáèòòÿ definition ~ ìåòîä ôîðìóâàííÿ ìàëþíêà development advanced rate ~ ìåòîä ïðèñêîðåííÿ ðîçðîáîê diffused planar ~ ïëàíàðíà òåõíîëîã³ÿ diffusion ~ ìåòîä äèôó糿 double-diffusion ~ ìåòîä ïîäâ³éíî¿ [äâîêðàòíî¿] äèôó糿, äâîõäèôóç³éíèé ìåòîä dry processing ~ ìåòîä ñóõî¿ îáðîáêè (áåç âæèâàííÿ ð³äêèõ ðåàêòèâ³â) electron-beam ~ åëåêòðîííî-ïðîìåíåâà òåõíîëîã³ÿ electroplating ~ åëåêòðîë³òè÷íèé ìåòîä, ìåòîä åëåêòðîë³òè÷íîãî îñàäæåííÿ etch-and-refill ~ ìåòîä âèáîð÷îãî òðàâëåííÿ ³ çàïîâíåííÿ êàíàâîê etchback ~ ìåòîä íàñêð³çíîãî ïðîòðàâëåííÿ (íàïð. ìåòàë³çîâàíèõ îòâîð³â â äðóêîâàí³é ïëàò³) evaporation ~ ìåòîä òåðìîâàêóóìíîãî íàïèëåííÿ fabrication ~ òåõíîëîã³ÿ âèðîáíèöòâà film ~ ïë³âêîâà òåõíîëîã³ÿ flip-chip ~ ìåòîä ïåðåâåðíåíîãî êðèñòàëà floating crucible ~ ìåòîä ïëàâàþ÷îãî òèãëÿ (äëÿ âèðîùóâàííÿ ìîíîêðèñòàë³â) folding ~ ìåòîä çãîðòêè (ïðè ÿêîìó ïëîùà êðèñòàëà ðîçáèâàºòüñÿ íà ä³ëÿíêè, â³äïîâ³äí³ ðîçì³ðíîñò³ ìàøèíè, ³ ìàøèíà ïîñë³äîâíî îáðîáëÿº êîæíó ä³ëÿíêó) four-point probe ~ ÷åòèðüîõçîíäîâèé ìåòîä (âèì³ðþâàííÿ ïèòîìîãî îïîðó) growth ~ ìåòîä âèðîùóâàííÿ implant-isolation ~ ìåòîä ³çîëÿö³¿ ç âèêîðèñòàííÿì ³îííî¿ ³ìïëàíòàö³¿ incremental time ~ ³íêðåìåíòíèé ìåòîä, ìåòîä ïðèðîñòó ÷àñó integrated ~ ³íòåãðàëüíà òåõíîëîã³ÿ, òåõíîëîã³ÿ ²Ñ
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interconnection ~ ìåòîä ôîðìóâàííÿ ì³æç’ºäíàíü; ìåòîä ìîíòàæó internal trace ~ ìåòîä âíóòð³øíüîãî äîñë³äæåííÿ (äëÿ ïîøóêó íåñïðàâíîñòåé â ²Ñ) ion-implantation ~ ìåòîä ³îííî¿ ³ìïëàíòàö³¿ isolation ~ ìåòîä (åëåêòðè÷íî¿) ³çîëÿö³¿ (åëåìåíò³â ²Ñ) laser selective photoionisation ~ ìåòîä ëàçåðíî-ñòèìóëþþ÷î¿ ñåëåêòèâíî¿ ôîòî³îí³çàö³¿ laser-trimming ~ ëàçåðíèé ìåòîä ï³äãîíêè (îïîðè ðåçèñòîð³â) lifting [lift-off] ~ ìåòîä çâîðîòíî¿ ôîòîë³òîãðàô³¿ light-scattering ~ ìåòîä ðîçñ³þâàííÿ ñâ³òëà (äëÿ âèì³ðþâàííÿ êîíöåíòðàö³¿ ì³êðî÷àñòèíîê ïîâ³òðÿ) liquid encapsulation Czochralski ~ ìåòîä ×îõðàëüñüêîãî ç îáâîë³êàííÿì ðîçïëàâó ³íåðòíîþ ð³äèíîþ liquid (-phase) epitaxy ~ ìåòîä åïèòàêñ³¿ ç ð³äêî¿ ôàçè, ìåòîä ð³äèííî¿ åï³òàêñ³¿ lithographic ~ ìåòîä ë³òîãðàô³¿ masked diffusion ~ ìåòîä äèôó糿 ç âèêîðèñòàííÿì îêñèäíèõ ìàñîê masking ~ ìåòîä ìàñêóâàííÿ; ìåòîä ôîðìóâàííÿ ìàñêóþ÷îãî øàðó mask-making ~ ìåòîä âèãîòîâëåííÿ øàáëîí³â masterslice ~ ìåòîä (âèãîòîâëåííÿ ²Ñ) íà îñíîâ³ áàçîâèõ ìàòðè÷íèõ êðèñòàë³â mesa-fabrication ~ òåõíîëîã³ÿ ôîðìóâàííÿ ìåçàñòðóêòóð Minimod ~ ìåòîä «ì³í³ìîä» (äëÿ çá³ðêè ²Ñ íà ñòð³÷êîâèõ íîñ³ÿõ) mixed-level ~ áàãàòîð³âíåâèé ìåòîä ïðîåêòóâàííÿ mixed-mode ~ çì³øàíèé ìåòîä (îá’ºäíóº äâà ìåòîäè â îäíó ñèñòåìó íà îäíîìó ³ òîìó æ ð³âí³) modified (horizontal) Bridgman ~ ìîäèô³êîâàíèé ìåòîä Áð³äæìåíà (ãîðèçîíòàëüíîãî âèðîùóâàííÿ ìîíîêðèñòàë³â) molecular-beam epitaxy ~ ìåòîä ìîëåêóëÿðíî-ïó÷êîâî¿ åï³òàêñ³¿ monolithic ~ òåõíîëîã³ÿ ìîíîë³òíèõ ²Ñ; òåõíîëîã³ÿ íàï³âïðîâ³äíèêîâèõ ²Ñ
tec mounting ~ ìåòîä ìîíòàæó; ìåòîä óñòàíîâêè (íàïð. êîìïîíåíò³â íà äðóêîâàí³é ïëàò³) multichip assembly ~ áàãàòîêðèñòàëüíèé ìåòîä çá³ðêè ²Ñ multiwire ~ òåõíîëîã³ÿ áàãàòîïðîâ³äíèêîâîãî ìîíòàæó íà ïëàò³ native îõide ~ ìåòîä âèõ³äíîãî îêñèäó (ï³äãîòîâêà ïîâåðõí³ ï³äêëàäêè äëÿ ïðîâåäåííÿ ìîëåêóëÿðíî¿ åï³òàêñ³¿) node tearing ~ ìåòîä ðîçðèâó âóçë³â (â ÑÀÏÐ) n-type doping ~ ìåòîä ëåãóâàííÿ äîíîðíîþ äîì³øêîþ open-tube (diffusion) ~ ìåòîä â³äêðèòî¿ òðóáè (äëÿ äèôó糿 äîì³øêè â íàï³âïðîâ³äíèê) optical alignment ~ îïòè÷íèé ìåòîä ñóì³ùåííÿ oxide masking ~ ìåòîä îêñèäíîãî ìàñêóâàííÿ oxygen-plasma îõidation ~ ìåòîä îêñèäóâàííÿ â êèñíåâ³é ïëàçì³ packaging ~ ìåòîä çá³ðêè ³ ãåðìåòèçàö³¿ peripheral sawing ~ ìåòîä ð³çàííÿ (íàï³âïðîâ³äíèêîâèõ çëèòê³â) äèñêîâèìè ïèëàìè ³ç çîâí³øíüîþ ð³æó÷îþ êðîìêîþ photolithographic ~ ìåòîä ôîòîë³òîãðàô³¿ photomasking ~ ìåòîä ôîòîìàñêóâàííÿ; ìåòîä ôîòîë³òîãðàô³¿ photomechanical ~ ìåòîä ôîòîìåõàí³÷íî¿ îáðîáêè photoresist lift-off ~ ìåòîä çâîðîòíî¿ ôîòîë³òîãðàô³¿ piecewise linear modeling ~ øìàòêîâîë³í³éíèé ìåòîä ìîäåëþâàííÿ planar-epitaxial ~ ïëàíàðíî-åï³òàêñ³àëüíà òåõíîëîã³ÿ plasma-oxidation ~ ìåòîä ïëàçìîâîãî îêñèäóâàííÿ plasma-spraying ~ ìåòîä ïëàçìîâîãî ðîçïèëþâàííÿ p-n junction isolation ~ ìåòîä ³çîëÿö³¿ ð–nïåðåõîäàìè positive photoresist masking ~ ìåòîä ôîòîë³òîãðàô³¿ íà îñíîâ³ ïîçèòèâíîãî ôîòîðåçèñòà probe ~ çîíäîâèé ìåòîä (âèì³ðþâàííÿ ïèòîìîãî îïîðó)
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processing ~ 1. ìåòîä (òåõíîëîã³÷íî¿) îáðîáêè 2. òåõíîëîã³ÿ production ~ òåõíîëîã³ÿ âèðîáíèöòâà production soldering ~ ïðîìèñëîâèé ìåòîä ïàÿííÿ reduction ~ ìåòîä çìåíøåííÿ çîáðàæåííÿ (ó ôîòîë³òîãðàô³¿) resist ~ ìåòîä ë³òîãðàô³¿ SBC ~ áàçîâèé òåõíîëîã³÷íèé ìåòîä âèãîòîâëåííÿ ²Ñ ç ïðèõîâàíèì øàðîì êîëåêòîðà scaling ~ ìåòîä ìàñøòàáóâàííÿ, ìåòîä ïðîïîðö³éíîãî çìåíøåííÿ ðîçì³ð³â (åëåìåíò³â ²Ñ) screen-printing [screen-stencil] ~ ìåòîä òðàôàðåòíîãî äðóêó, ìåòîä ñ³òêîãðàô³¿ self-aligned double-diffusion ~ äâîõäèôóç³éíà òåõíîëîã³ÿ ÌÎÍ ²Ñ ç ñàìîñóì³ùåíèìè çàòâîðàìè serial-writing ~ ìåòîä ïîñë³äîâíîãî ôîðìóâàííÿ ìàëþíêà shallow V-groove ~ ìåòîä ³çîëÿö³¿ (åëåìåíò³â ²Ñ) äð³áíèìè V-ïîä³áíèìè êàíàâêàìè shrinking ~ ìåòîä ìàñøòàáóâàííÿ, ìåòîä ïðîïîðö³éíîãî çìåíøåííÿ ðîçì³ð³â (åëåìåíò³â ²Ñ) silk-screen(ing)~ ìåòîä òðàôàðåòíîãî äðóêó, ìåòîä ñ³òêîãðàô³¿ single-layer [single-level] interconnection ~ ìåòîä îäíîð³âíåâèõ ì³æç’ºäíàíü (äëÿ êîìóòàö³¿ åëåìåíò³â ²Ñ) sinking ~ òåõí³êà ñîðòóâàííÿ ç ïðîñòèìè âñòàâêàìè slice ~ ìåòîä (âèãîòîâëåííÿ ²Ñ) íà îñíîâ³ áàçîâîãî ìàòðè÷íîãî êðèñòàëà solder reflow ~ ìåòîä ïàÿííÿ îïëàâëåííÿì ïðèïîþ solute-diffusion ~ ìåòîä äèôó糿 ç ðîç÷èíó äîì³øêè SOS isolation ~ ìåòîä ³çîëÿö³¿ åëåìåíò³â ²Ñ ç ÊÍÑ-ñòðóêòóðîþ sparse matrix ~ ìåòîä ðîçð³äæåíèõ ìàòðèöü staged-diffusion ~ ìåòîä áàãàòîñòàä³éíî¿ äèôó糿 staining ~ ìåòîä ôàðáóâàííÿ (äëÿ âèçíà÷åííÿ òèïó åëåêòðîïðîâ³äíîñò³ îáëàñòåé ð-n-ïåðåõîäó) stencil ~ ìåòîä òðàôàðåòíîãî äðóêó, ìåòîä ñ³òêîãðàô³¿
tec step-and-repeat reduction ~ ìåòîä ïîñë³äîâíîãî êðîêîâîãî çìåíøåííÿ çîáðàæåííÿ (ó ôîòîë³òîãðàô³¿) tape-carrier ~ ìåòîä çá³ðêè ²Ñ íà ñòð³÷êîâèõ íîñ³ÿõ test ~ ìåòîä âèïðîáóâàíü thermal wave ~ ìåòîä òåïëîâèõ õâèëü (äëÿ âèì³ðþâàííÿ äåôåêò³â) trench-etch ~ ìåòîä âèòðàâëåííÿ (³çîëþþ÷èõ) êàíàâîê tri-mask ~ òåõíîëîã³ÿ ²Ñ ç âèêîðèñòàííÿì òðüîõ ôîòîøàáëîí³â trimming ~ ìåòîä ï³äãîíêè (îïîðè ðåçèñòîð³â) two-layer resist ~ ìåòîä ë³òîãðàô³¿ ³ç çàñòîñóâàííÿì äâîõ ðåçèñò³â two-phase ~ äâîôàçíèé ìåòîä (â ÏÇÇ) two-step ~ äâîõñòàä³éíèé ìåòîä vapor-îõidation ~ ìåòîä îêñèäóâàííÿ â ïàðàõ âîäè vapor-phase epitaxial ~ ìåòîä åï³òàêñ³¿ ç ïàðîâî¿ ôàçè V-ATC ~ ìåòîä ³çîëÿö³¿ ç âèêîðèñòàííÿì âåðòèêàëüíîãî àí³çîòðîïíîãî òðàâëåííÿ (äëÿ ôîðìóâàííÿ êàíàâîê), ìåòîä ù³ëèñòî¿ ³çîëÿö³¿ wet ~ ìåòîä ð³äèííî¿ îáðîáêè (³ç çàñòîñóâàííÿì ð³äêèõ ðåàêòèâ³â) wire-bonding ~ ìåòîä äðîòÿíîãî ìîíòàæó wire-wrap (ping) ~ ìåòîä íàêðóòêè wiring ~ ìåòîä ìîíòàæó; ìåòîä ôîðìóâàííÿ ç’ºäíàíü 1:1 photomasking ~ ìåòîä ôîòîë³òîãðàô³¿ áåç ìàñøòàáóâàííÿ, ìåòîä ôîòîë³òîãðàô³¿ ç ìàñøòàáîì 1:1 technologist òåõíîëîã technolog/y 1. òåõíîëîã³ÿ (äèâ. ò-æ àðproach, technique) 2. òåõí³êè additive ~ àääèòèâíà òåõíîëîã³ÿ advanced ~ ïåðåäîâà òåõíîëîã³ÿ alignment ~ ìåòîä ñóì³ùåííÿ (íàïð. ôîòîøàáëîíó ç íàï³âïðîâ³äíèêîâîþ ïëàñòèíîþ) analog ~ 1. òåõíîëîã³ÿ àíàëîãîâèõ ²Ñ 2. àíàëîãîâà òåõí³êà baseline [basic] ~ áàçîâà òåõíîëîã³ÿ batch ~ ãðóïîâà òåõíîëîã³ÿ beam-tape ~ òåõíîëîã³ÿ ïðèºäíàííÿ êðèñòàë³â äî áàëêîâèõ âèâîä³â íà ñòð³÷êîâîìó íîñ³¿
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bi-FET ~ (êîìá³íîâàíà) òåõíîëîã³ÿ ²Ñ íà á³ïîëÿðíèõ ³ ïîëüîâèõ òðàíçèñòîðàõ bi-MOS [BIMOS] ~ (êîìá³íîâàíà) òåõíîëîã³ÿ ²Ñ íà á³ïîëÿðíèõ ³ ÌÎÍòðàíçèñòîðàõ bipolar ~ á³ïîëÿðíà òåõíîëîã³ÿ bit-slice ~ òåõíîëîã³ÿ ñåêö³éíèõ ì³êðîïðîöåñîð³â beardless ~ (ñêëàäàëüíî-ìîíòàæíà) òåõíîëîã³ÿ áåç âæèâàííÿ ñòàíäàðòíî¿ äðóêîâàíî¿ ïëàòè (íàïð. òåõíîëîã³ÿ ïîâåðõíåâîãî ìîíòàæó) BSA ~ òåõíîëîã³ÿ á³ïîëÿðíèõ ²Ñ ç ñàìîñóì³ùåíèìè îáëàñòÿìè bubble ~ òåõíîëîã³ÿ ïðèñòðî¿â íà ÖÌÄ bumping ~ òåõíîëîã³ÿ ïðèºäíàííÿ êðèñòàë³â äî ñòîâï÷èêîâèõ âèâîä³â íà ñòð³÷êîâîìó íîñ³¿ CAD ~ies ìåòîäîëîã³ÿ àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ CCD ~ òåõíîëîã³ÿ ÏÇÇ cell array ~ òåõíîëîã³ÿ ²Ñ íà îñíîâ³ áàçîâîãî êðèñòàëà òèïó ìàòðèö³ ëîã³÷íèõ åëåìåíò³â cermet ~ êåðìåòíà òåõíîëîã³ÿ CMOS ~ òåõíîëîã³ÿ ÊÌÎÍ ²Ñ coating ~ òåõíîëîã³ÿ íàíåñåííÿ ïîêðèòò³â ³ ïë³âîê cryogenic ~ êð³îãåííà òåõí³êà current ~ ñó÷àñíà òåõíîëîã³ÿ custom-design ~ òåõíîëîã³ÿ çàìîâëåíèõ ²Ñ deep-ultraviolet photolithographic ~ ìåòîä ôîòîë³òîãðàô³¿ ç âèêîðèñòàííÿì äàëüíüîãî óëüòðàô³îëåòîâîãî âèïðîì³íþâàííÿ dense LSI ~ òåõíîëîã³ÿ Â²Ñ ç âèñîêîþ ãóñòèíîþ óïàêîâêè diffused epitaxial planar ~ ïëàíàðíîåï³òàêñ³àëüíà òåõíîëîã³ÿ diffusion ~ äèôóç³éíà òåõíîëîã³ÿ digital ~ 1. òåõíîëîã³ÿ öèôðîâèõ ²Ñ 2. öèôðîâà òåõí³êà dominant ~ îñíîâíà òåõíîëîã³ÿ; ïðîâ³äíà òåõíîëîã³ÿ dry ~ ñóõà òåõíîëîã³ÿ (áåç çàñòîñóâàííÿ ð³äêèõ ðåàêòèâ³â) dry chemical etching ~ òåõíîëîã³ÿ ñóõîãî òðàâëåííÿ ÅÑL ~ òåõíîëîã³ÿ ²Ñ íà ÅÇË, òåõíîëîã³ÿ ÅÇË ²Ñ electron ~ 1. åëåêòðîííà òåõíîëîã³ÿ 2. åëåêòðîííà òåõí³êà
tec electron-beam exposure ~ ìåòîä åëåêòðîííî-ïðîìåíåâîãî [åëåêòðîííîãî] åêñïîíóâàííÿ electron-parts ~ òåõíîëîã³ÿ åëåêòðîííèõ êîìïîíåíò³â electro-optical ~ òåõíîëîã³ÿ îïòîåëåêòðîííèõ ïðèëàä³â epibase ~ òåõíîëîã³ÿ âèãîòîâëåííÿ òðàíçèñòîð³â ç åï³òàêñ³àëüíî¿ áàçîþ epiplanar [epitaxial planar] ~ ïëàíàðíîåï³òàêñ³àëüíà òåõíîëîã³ÿ film-carrier ~ òåõíîëîã³ÿ çá³ðêè ²Ñ íà ñòð³÷êîâîìó íîñ³¿ fine-line ~ òåõíîëîã³ÿ ²Ñ ç åëåìåíòàìè çìåíøåíèõ ðîçì³ð³â flip-chip (bonding) ~ òåõíîëîã³ÿ ìîíòàæó ìåòîäîì ïåðåâåðíåíîãî êðèñòàëà full-slice ~ òåõíîëîã³ÿ ²Ñ íà ö³ë³é íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ fuse-link [fusible-link] ~ ìåòîä ïëàâêèõ ïåðåìè÷îê (äëÿ ïðîãðàìóâàííÿ ÏÇÏ) gallium arsenide ~ 1. òåõíîëîã³ÿ ²Ñ íà àðñåí³ä³ ãàë³þ 2. òåõíîëîã³ÿ îòðèìàííÿ àðñåí³äó ãàë³þ gate-array ~ òåõíîëîã³ÿ ²Ñ íà îñíîâ³ áàçîâîãî êðèñòàëà òèïó ìàòðèö³ ëîã³÷íèõ åëåìåíò³â high ~ ïåðåäîâà òåõíîëîã³ÿ high-density ~ òåõíîëîã³ÿ ²Ñ ç âèñîêîþ ãóñòèíîþ óïàêîâêè high-electron mobility transistor ~ òåõíîëîã³ÿ òðàíçèñòîð³â ç âèñîêîþ ðóõëèâ³ñòþ åëåê òðîí³â “high-end” ~ òåõíîëîã³ÿ âèñîêîÿê³ñíèõ ïðèëàä³â high-speed ~ òåõíîëîã³ÿ øâèäêîä³éíèõ ²Ñ hybrid ~ ã³áðèäíà òåõíîëîã³ÿ, òåõíîëîã³ÿ Ã²Ñ industry-standard MOS ~ áàçîâà ïðîìèñëîâà ÌÎÍ-òåõíîëîã³ÿ information ~ òåõí³êà îáðîáêè ³íôîðìàö³¿ inner-lead bonding ~ òåõíîëîã³ÿ ïðèºäíàííÿ âíóòð³øí³õ âèâîä³â äî êðèñòàëà íà ñòð³÷êîâîìó íîñ³¿ integration ~ ³íòåãðàëüíà òåõíîëîã³ÿ, òåõíîëîã³ÿ ²Ñ interconnection ~ òåõíîëîã³ÿ ôîðìóâàííÿ ì³æç’ºäíàíü isopianar ~ ³çîïëàíàðíà òåõíîëîã³ÿ
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J-FET ~ òåõíîëîã³ÿ ïîëüîâèõ òðàíçèñòîð³â ç ð–n-ïåðåõîäàìè Josephson(-junction)~ òåõíîëîã³ÿ ïðèëàä³â íà ïåðåõîäàõ Äæîçåôñîíà leading-edge ~ ïåðåäîâà òåõíîëîã³ÿ lithographic ~ ìåòîä ë³òîãðàô³¿ logic ~ òåõíîëîã³ÿ ëîã³÷íèõ ²Ñ low ~ çàñòàð³ëà òåõíîëîã³ÿ “low-end” ~ òåõíîëîã³ÿ ïðèëàä³â øèðîêîãî âæèâàííÿ low-power ~ òåõíîëîã³ÿ ìàëîïîòóæíèõ ïðèëàä³â magnetic-bubble ~ òåõíîëîã³ÿ ïðèñòðî¿â íà ÖÌÄ mainstream ~ çàãàëüíîïðèéíÿòà òåõíîëîã³ÿ; áàçîâà òåõíîëîã³ÿ mask-fabrication ~ òåõíîëîã³ÿ âèãîòîâëåííÿ øàáëîí³â master-slice ~ òåõíîëîã³ÿ ²Ñ íà îñíîâ³ áàçîâîãî ìàòðè÷íîãî êðèñòàëà merged (bipolar) ~ òåõíîëîã³ÿ á³ïîëÿðíèõ ²Ñ ç ôóíêö³îíàëüíî ñóì³ùåíèìè îáëàñòÿìè (íàïð. òåõíîëîã³ÿ ²2Ë-ñõåì) metal-board ~ òåõíîëîã³ÿ âèãîòîâëåííÿ ïëàòè ç ìåòàëåâîþ îñíîâîþ metallization ~ òåõíîëîã³ÿ ìåòàë³çàö³¿ microcircuit ~ ³íòåãðàëüíà òåõíîëîã³ÿ, òåõíîëîã³ÿ ²Ñ microelectronic ~ ì³êðîåëåêòðîííà òåõíîëîã³ÿ MIS ~ òåõíîëîã³ÿ ÌÄÍ-ñòðóêòóð, ÌÄÍòåõíîëîã³ÿ mixed ~ êîìá³íîâàíà òåõíîëîã³ÿ (íàïð. biMOS) monolithic ~ òåõíîëîã³ÿ ìîíîë³òíèõ ²Ñ; òåõíîëîã³ÿ íàï³âïðîâ³äíèêîâèõ ²Ñ MOS ~ òåõíîëîã³ÿ ÌÎÍ-ñòðóêòóð, ÌÎÍòåõíîëîã³ÿ MTL ~ òåõíîëîã³ÿ ²Ñ íà ²2Ë, òåõíîëîã³ÿ ²2Ëñõåì multilayer-wiring ~ òåõíîëîã³ÿ ôîðìóâàííÿ áàãàòîð³âíåâèõ ç’ºäíàíü multiple-epitaxial planar ~ ïëàíàðíîåï³òàêñ³àëüíà òåõíîëîã³ÿ ç âèêîðèñòàííÿì äåê³ëüêîõ åï³òàêñ³àëüíèõ øàð³â n-channel ~ òåõíîëîã³ÿ n-êà-íàëüíûõ ÌÎÍ ²Ñ, òåõíîëîã³ÿ n-ÌÎÍ ²Ñ optical lithographic ~ ìåòîä ôîòîë³òîãðàô³¿
tec oxide-isolated monolithic ~ òåõíîëîã³ÿ íàï³âïðîâ³äíèêîâèõ ²Ñ ç îêñèäíîþ ³çîëÿö³ºþ passivation ~ ìåòîä ïàñèâàö³¿ ²Ñ p-channel ~ òåõíîëîã³ÿ p-êàíàëüíèõ ÌÎÍ ²Ñ, òåõíîëîã³ÿ p-ÌÎÍ ²Ñ p-channel Si-gate ~ òåõíîëîã³ÿ ð-ÌÎÍ ²Ñ ç êðåìí³ºâèìè çàòâîðàìè photofabrication ~ ìåòîä ôîòîë³òîãðàô³¿ planar (fabrication) ~ ïëàíàðíà òåõíîëîã³ÿ plasma ~ ïëàçìîâà òåõíîëîã³ÿ plating ~ òåõíîëîã³ÿ íàíåñåííÿ ïîêðèòò³â polysilicon-gate ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç ïîë³êðåìí³ºâèìè çàòâîðàìè polysilicon-load ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç ðåçèñòîðàìè íàâàíòàæåíü ç ïîë³êðèñòàë³÷íîãî êðåìí³þ polysilicon self-aligned [PSA] ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç ñàìîñóì³ùåíèìè çàòâîðàìè ç ïîë³êðèñòàë³÷íîãî êðåìí³þ resistless etching ~ òåõíîëîã³ÿ ë³òîãðàô³¿ áåç çàñòîñóâàííÿ ðåçèñò³â (íàïð. ç âèêîðèñòàííÿì åêñèìåðíîãî ëàçåðà) robotic ~ ðîáîòîòåõí³êà scaled (process) ~ òåõíîëîã³ÿ ìàñøòàáîâàíèõ ²Ñ, òåõíîëîã³ÿ ²Ñ ç ïðîïîðö³éíî çìåíøåíèìè ðîçì³ðàìè åëåìåíò³â Schottky transistor logic ~ òåõíîëîã³ÿ ëîã³÷íèõ ²Ñ ç òðàíçèñòîðàìè Øîòê³ Schottky TTL ~ òåõíîëîã³ÿ ²Ñ íà ÒÒË ç ä³îäàìè Øîòê³, òåõíîëîã³ÿ ÒÒËØ screen-and-fire ~ òîâñòîïë³âêîâà òåõíîëîã³ÿ self-aligned source-drain diffusion ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç ñàìîñóì³ùåíèìè äèôóç³éíèìè îáëàñòÿìè ñòîêó ³ âèòîêó shared silicon ~ òåõíîëîã³ÿ ôîðìóâàííÿ íà îäí³é êðåìí³ºâ³é ïëàñòèí³ ²Ñ ð³çíèõ òèï³â silicide-gate ~ òåõíîëîã³ÿ ñòâîðåííÿ ïîëüîâèõ òðàíçèñòîð³â ç ñèë³öèäíèì çàòâîðîì silicon ~ 1. òåõíîëîã³ÿ êðåìí³ºâèõ íàï³âïðîâ³äíèêîâèõ ïðèëàä³â 2. òåõíîëîã³ÿ îòðèìàííÿ êðåìí³þ silicon-gate ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç ïîë³êðåìí³ºâèìè çàòâîðàìè silicon-in-insulator ~ òåõíîëîã³ÿ ²Ñ ³ç ñòðóêòóðîþ òèïó «êðåìí³é â ä³åëåêòðèö³», òåõíîëîã³ÿ ²Ñ íà ÊÂÄ-ñòðóêòóð³, ÊÂÄòåõíîëîã³ÿ
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silicon-in-sapphire ~ òåõíîëîã³ÿ ²Ñ ³ç ñòðóêòóðîþ òèïó «êðåìí³é â ñàïô³ð³», òåõíîëîã³ÿ ²Ñ ç ÊÂÑ-ñòðóêòóðîþ, ÊÂÑòåõíîëîã³ÿ silicon-on-insulator ~ òåõíîëîã³ÿ ²Ñ ³ç ñòðóêòóðîþ òèïó «êðåìí³é íà ä³åëåêòðèö³», òåõíîëîã³ÿ ²Ñ ç ÊÍÄ-ñòðóêòóðîþ, ÊÍÄòåõíîëîã³ÿ silicon-on-sapphire ~ òåõíîëîã³ÿ ²Ñ ³ç ñòðóêòóðîþ òèïó «êðåìí³é íà ñàïô³ð³», òåõíîëîã³ÿ ²Ñ ç ÊÍÑ-ñòðóêòóðîþ, ÊÍÑòåõíîëîã³ÿ silicon wafer ~ òåõíîëîã³ÿ îáðîáêè êðåìí³ºâèõ ïëàñòèí single-diffused (planar) ~ òåõíîëîã³ÿ ²Ñ ³ç çàñòîñóâàííÿì îäíîêðàòíî¿ äèôó糿 solid-state ~ òâåðäîò³ëüíà òåõíîëîã³ÿ; íàï³âïðîâ³äíèêîâà òåõíîëîã³ÿ spider-bonding ~ òåõíîëîã³ÿ ïðèºäíàííÿ êðèñòàë³â äî ïàâó÷êîâèõ âèâîä³â íà ñòð³÷êîâîìó íîñ³¿ standard bipolar ~ áàçîâà á³ïîëÿðíà òåõíîëîã³ÿ submicron (IC) ~ ñóáì³êðîííà òåõíîëîã³ÿ ²Ñ, òåõíîëîã³ÿ ²Ñ ç ñóáì³êðîííèìè åëåìåíòàìè subnanosecond ~ òåõíîëîã³ÿ ²Ñ ç ñóáíàíîñåêóíäíîþ øâèäêî䳺þ substrate ~ òåõíîëîã³ÿ âèãîòîâëåííÿ ï³äêëàäîê subtractive ~ ñóáòðàêòèâíà òåõíîëîã³ÿ superconducting ~ 1. òåõíîëîã³ÿ íàäïðîâ³äíèêîâèõ ïðèëàä³â 2. òåõíîëîã³ÿ o:îòðèìàííÿ íàäïðîâ³äíèê³â surface-mount ~ òåõíîëîã³ÿ ïîâåðõíåâîãî ìîíòàæó system ~ ñèñòåìîòåõí³êè TAB [tape-automated-bonding] ~ òåõíîëîã³ÿ àâòîìàòèçîâàíî¿ çá³ðêè ²Ñ íà ñòð³÷êîâîìó íîñ³¿ tape bumping ~ òåõíîëîã³ÿ ôîðìóâàííÿ ñòîâï÷èêîâèõ âèâîä³â íà ñòð³÷êîâîìó íîñ³¿ thick-film multilayer ~ òåõíîëîã³ÿ òîâñòîïë³âêîâèõ áàãàòîøàðîâèõ ñòðóêòóð thick-film hybrid ~ òåõíîëîã³ÿ òîâñòîïë³âêîâèõ Ã²Ñ thin-film ~ òîíêîïë³âêîâà òåõíîëîã³ÿ trench ~ òåõíîëîã³ÿ ôîðìóâàííÿ (³çîëþþ÷èõ) êàíàâîê
ter trench isolation ~ òåõíîëîã³ÿ ³çîëÿö³¿ (åëåìåíò³â ²Ñ) êàíàâêàìè ç ä³åëåêòðè÷íèì ìàòåð³àëîì TTL ~ òåõíîëîã³ÿ ²Ñ íà ÒÒË, òåõíîëîã³ÿ ÒÒË ²Ñ ULA ~ òåõíîëîã³ÿ ²Ñ íà áàçîâîìó ìàòðè÷íîìó êðèñòàë³ òèïó íåñêîìóòîâàíî¿ ëîã³÷íî¿ ìàòðèö³ ultraviolet photolithography ~ ìåòîä ôîòîë³òîãðàô³¿ ç âèêîðèñòàííÿì óëüòðàô³îëåòîâîãî âèïðîì³íþâàííÿ unipolar ~ óí³ïîëÿðíà òåõíîëîã³ÿ, òåõíîëîã³ÿ ïîëüîâèõ òðàíçèñòîð³â V-groove ~ òåõíîëîã³ÿ ÌÎÍ ²Ñ ç Vïîä³áíèìè êàíàâêàìè, òåõíîëîã³ÿ VÌÎÍ ²Ñ VHSIC ~ òåõíîëîã³ÿ íàäøâèäê³ñíèõ [íàäøâèäêîä³þ÷èõ] ²Ñ, òåõíîëîã³ÿ ÍØ²Ñ wafer bumping ~ òåõíîëîã³ÿ ôîðìóâàííÿ ñòîâï÷èêîâèõ âèâîä³â íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ water treatment ~ òåõíîëîã³ÿ âîäîï³äãîòîâêè wiring ~ òåõíîëîã³ÿ ôîðìóâàííÿ ç’ºäíàíü X-ray ~ 1. ìåòîä ðåíòãåí³âñüêî¿ ë³òîãðàô³¿ 2. òåõí³êè âæèâàííÿ ðåíòãåí³âñüêîãî ïðîì³ííÿ teflon òåôëîí, ïîë³òåòðàôòîðåòèëåí, ôòîðîïëàñò telematics òåëåìàòèêà (îá’ºäíóº àïàðàòóðó ïî îá÷èñëþâàëüí³é òåõí³ö³, òåëåáà÷åííþ ³ çâ’ÿçêó) telluride: cadmium ~ òåëóðèä êàäì³þ, CdTe mercury ~ òåëóðèä ðòóò³, HgTe temperature òåìïåðàòóðà absolute ~ òåðìîäèíàì³÷íà òåìïåðàòóðà alloying ~ òåìïåðàòóðà ñïëàâó ambient ~ òåìïåðàòóðà íàâêîëèøíüîãî ñåðåäîâèùà characteristic ~ õàðàêòåðèñòè÷íà òåìïåðàòóðà, òåìïåðàòóðà Äåáàÿ decomposition ~ òåìïåðàòóðà (òåðì³÷íîãî) ðîçêëàäàííÿ dew-point ~ òî÷êà ðîñè drive-in ~ òåìïåðàòóðà ðîçãîíó (äðóãî¿ ñòà䳿 äâîõñòàä³éíî¿ äèôó糿) epitaxial-deposition ~ òåìïåðàòóðà îñàäæåííÿ åï³òàêñ³àëüíîãî øàðó firing ~ òåìïåðàòóðà âïàëþâàííÿ; òåìïåðàòóðà âèïàëåííÿ
flow ~ òåìïåðàòóðà ðîçò³êàííÿ, òåìïåðàòóðà ðîçì’ÿêøåííÿ (íàïð. ñòåêëà) hardening ~ òåìïåðàòóðà çàòâåðä³ííÿ indoor ~ ê³ìíàòíà òåìïåðàòóðà liquidus ~ òåìïåðàòóðà ïåðåõîäó â ð³äêèé ñòàí noise ~ øóìîâà òåìïåðàòóðà on set ~ òåìïåðàòóðà ïî÷àòêó ñïàäó îïîðó ôàçîâîãî ïåðåõîäó operating ~ ðîáî÷à òåìïåðàòóðà processing ~ òåìïåðàòóðà òåõíîëîã³÷íî¿ îáðîáêè recrystallization ~ òåìïåðàòóðà ðåêðèñòàë³çàö³¿ rotational ~ òåìïåðàòóðà îáåðòàëüíèõ çáóäæåíü sintering ~ òåìïåðàòóðà ñï³êàííÿ softening ~ òåìïåðàòóðà ðîçì’ÿêøåííÿ (íàïð. ñêëà) soldering ~ òåìïåðàòóðà ïàÿííÿ solidus ~ òåìïåðàòóðà ïåðåõîäó â òâåðäèé ñòàí substrate ~ òåìïåðàòóðà ï³äêëàäêè transition ~ òåìïåðàòóðà ïåðåõîäó (íàïð. ôàçîâîãî) vibrational ~ òåìïåðàòóðà êîëèâàëüíèõ çáóäæåíü vitrification ~ òåìïåðàòóðà îñêëîâûâàíèÿ zero resistance ~ òåìïåðàòóðà îïîðó â íóëü template (ñêëÿíà) ïëàñòèíà äëÿ ôîòîøàáëîíó tension 1. íàòÿãíåííÿ; ñèëà íàòÿãíåííÿ; ðîçòÿãóâàííÿ | íàòÿãóâàòè; ðîçòÿãóâàòè 2. (åëåêòðè÷íà) íàïðóãà high ~ âèñîêà íàïðóãà interfacial ~ ì³æôàçíèé íàòÿã (íà ìåæ³ ðîçä³ëó) low ~ íèçüêà íàïðóãà surface ~ ïîâåðõíåâèé íàòÿã Tentype ô³ðì. ïðèëàä äëÿ âèçíà÷åííÿ òèïó åëåêòðîïðîâ³äíîñò³ íàï³âïðîâ³äíèêîâèõ ïëàñòèí terminal 1. ââåäåííÿ; âèâ³ä; âõ³ä; âèõ³ä 2. åëåêòðîä; êîíòàêò; êîíòàêòíèé ìàéäàí÷èê 3. òåðì³íàë bidirectional ~ äâîíàïðàâëåíèé âèâ³ä character-at-à-time ~ òåðì³íàë, ùî ââîäèòü ïîñèìâîëüíî common TDMA ~ çàãàëüíèé òåðì³íàë â ñèñòåì³ áàãàòîñòàíö³éíîãî äîñòóïó ç òèì÷àñîâèì óù³ëüíåííÿì
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tes connection ~ âèâ³ä control ~ óïðàâëÿþ÷èé åëåêòðîä conversational voice ~ ä³àëîãîâèé ìîâíèé òåðì³íàë drain ~ åëåêòðîä ñòîêó gate ~ åëåêòðîä çàòâîðà graphic (art) ~ ãðàô³÷íèé òåðì³íàë IC ~ âèâ³ä ²Ñ input ~ ââåäåííÿ; âõ³ä lead ~ âèâ³ä network ~ ìåðåæíèé òåðì³íàë output ~ âèâ³ä; âèõ³ä package ~ âèâ³ä êîðïóñó source ~ åëåêòðîä âèòîêó termination: junction ~ êîíòàêò (ð–n-)ïåðåõîäó resistor ~ âèâ³ä ðåçèñòîðà terracing îãðàíîâóâàííÿ (êðèñòàëà) test 1. âèïðîáóâàííÿ; âèïðîáóâàííÿ; ïðîâåäåííÿ âèïðîáóâàíü | âèïðîáîâóâàòè 2. ïåðåâ³ðêà; êîíòðîëü |ïåðåâ³ðÿòè; êîíòðîëþâàòè 3. òåñò | òåñòóâàòè accelerated ~ ïðèñêîðåí³ âèïðîáóâàííÿ acceptance ~ ïðèéìàëüíî-çäàâàëüí³ âèïðîáóâàííÿ aging ~ âèïðîáóâàííÿ íà ñòàð³ííÿ algorithmic ~ àëãîðèòì³÷íèé òåñò behavioral ~ ïåðåâ³ðêà ðåæèì³â (²Ñ) íà ïîâåä³íêîâîìó ð³âí³ bidirectional ~ äâîíàïðàâëåíèé òåñò boiling-water ~ âèïðîáóâàííÿ â êèïëÿ÷³é âîä³ (äëÿ ïåðåâ³ðêè âîëîãîñò³éêîñò³ ïëàñòìàñîâèõ êîðïóñ³â) bond pull ~ âèïðîáóâàííÿ âèâîä³â íà â³äðèâ centrifuge ~ âèïðîáóâàííÿ â öåíòðèôóç³ clock rate ~ ïåðåâ³ðêà òàêòîâî¿ ÷àñòîòè conditional ~ óìîâíèé òåñò continuity ~ ïåðåâ³ðêà ö³ë³ñíîñò³ ç’ºäíàíü (íà â³äñóòí³ñòü ðîçðèâ³â) design validation ~s òåñòè ïåðåâ³ðêè ïðîåêòó íà â³äïîâ³äí³ñòü âèìîãàì òåõí³÷íîãî çàâäàííÿ (íà ð³çíèõ åòàïàõ âåðèô³êàö³¿) destructive ~ ðóéíóþ÷èé êîíòðîëü diagnostic ~ ä³àãíîñòè÷íèé òåñò (äëÿ ëîêàë³çàö³¿ íåñïðàâíîñò³) die push ~ âèïðîáóâàííÿ êðèñòàë³â íà â³äðèâ (â³ä îñíîâè) end-to-end ~ äâîñòîðîíí³é êîíòðîëü environmental ~ êë³ìàòè÷í³ âèïðîáóâàííÿ
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evaluation ~ êîíòðîëüí³ âèïðîáóâàííÿ field ~ â³äáðàêóâàëüíèé òåñò fine/gross leak ~ âèïðîáóâàííÿ (íàïð. êîðïóñ³â ïðè ïåðåâ³ðö³ ãåðìåòè÷íîñò³) íà ñëàáêå ³ ñèëüíå íàò³êàííÿ functional ~ ïåðåâ³ðêà ïðàöåçäàòíîñò³ go/no-go ~ â³äáðàêóâàëüíå âèïðîáóâàííÿ goodness-of-fit ~ ïåðåâ³ðêà àäåêâàòíîñò³ goods-inward ~ 1. ïåðåâ³ðêà âíóòð³øí³õ ïàðàìåòð³â 2. âõ³äíèé êîíòðîëü Â²Ñ hand-generated ~ òåñò, ïîáóäîâàíèé (ñòâîðåíèé) âðó÷íó humidity ~ âèïðîáóâàííÿ íà âîëîãîñò³éê³ñòü imperfect ~ íåïîâíèé òåñò leak ~ 1. ïåðåâ³ðêà íà íàò³êàííÿ (âàêóóìíî¿ ñèñòåìè) 2. ïåðåâ³ðêà ãåðìåòè÷íîñò³ life ~ âèïðîáóâàííÿ íà äîâãîâ³÷í³ñòü liquid bubble ~ ïåðåâ³ðêà ãåðìåòè÷íîñò³ ìåòîäîì çàíóðåííÿ â ð³äèíó manufacturing ~ òåñòîâà ïîñë³äîâí³ñòü âõ³äíèõ ä³é ç ìåòîþ ïåðåâ³ðêè ãîòîâî¿ ïðîäóêö³¿ nondestructive ~ íåðóéí³âíèé êîíòðîëü on-wafer ~ ïåðåâ³ðêà êðèñòàë³â (íà ôóíêö³îíóâàííÿ) íà ïëàñòèí³ operational suitability ~ ïåðåâ³ðêà ôóíêö³îíàëüíî¿ ïðèäàòíîñò³ parametric ~ ïàðàìåòðè÷íèé òåñò potential ~ êàíäèäàò â òåñòè production ~ â³äáðàêóâàëüíå âèïðîáóâàííÿ pressure-cooker ~ êë³ìàòè÷í³ âèïðîáóâàííÿ ïðè ï³äâèùåíèõ òèñêó ³ òåìïåðàòóð³ ðåål ~ âèïðîáóâàííÿ íà â³äðèâ probe ~ çîíäîâ³ âèïðîáóâàííÿ salt atmosphere ~ ïåðåâ³ðêà êîðîç³éíî¿ ñò³éêîñò³ (êîðïóñ³â) â ïàðàõ ñîëüîâîãî ðîç÷èíó shock ~ âèïðîáóâàííÿ íà óäàðîñò³éê³ñòü significance ~ ïåðåâ³ðêà ïî êðèòåð³þ çíà÷óùîñò³ sliding-ONE ~ òåñò ÇÏ òèïó îäèíèöÿ, ùî «á³æèòü» Sliding-ZERO ~ òåñò ÇÏ òèïó íóëü, ùî «á³æèòü» sort ~ âèïðîáóâàííÿ êðèñòàë³â íà ôóíêö³îíóâàííÿ (íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³) steam-cook ~ âèïðîáóâàííÿ íà âîëîãîñò³éê³ñòü â ïàðàõ ðîç÷èííèêà
tet stress reliability ~ âèïðîáóâàííÿ íà íàä³éí³ñòü ï³ä íàâàíòàæåííÿì temperature and humidity ~ âèïðîáóâàííÿ íà òðîï³êîñò³éê³ñòü temperature ñócling ~ âèïðîáóâàííÿ íà ñò³éê³ñòü äî òåðìîöèêëþâàííÿ thermal-shock ~ âèïðîáóâàííÿ íà ñò³éê³ñòü äî òåðìîóäàðè two-tailed ~ äâîñòîðîííÿ ïåðåâ³ðêà vacuum-steam-pressure ~ ïåðåâ³ðêà âîëîãîñò³éêîñò³ (ïëàñòìàñîâèõ êîðïóñ³â) â ïàðàõ ï³ä òèñêîì vibration ~ âèïðîáóâàííÿ íà â³áðîñò³éê³ñòü testability 1. ìîæëèâ³ñòü ïðîâåäåííÿ âèïðîáóâàíü, òåñòîâàí³ñòü 2. ìîæëèâ³ñòü ïåðåâ³ðêè tester 1. âèïðîáóâàëüíà óñòàíîâêà, óñòàíîâêà äëÿ âèïðîáóâàííÿ, òåñòåð 2. âèì³ðþâàëüíèé ïðèëàä, âèì³ðþâà÷ ASIC ~ âèïðîáóâàëüíà óñòàíîâêà äëÿ ñïåö³àë³çîâàíèõ ²Ñ bench-top ~ íàñò³ëüíèé âèïðîáóâàëüíèé ïðèñòð³é bubble ~ áóëüáàøêîâèé âòðàòîøóêà÷ (äëÿ ïåðåâ³ðêè ãåðìåòè÷íîñò³ êîðïóñ³â) die shear ~ ïðèëàä äëÿ ïåðåâ³ðêè ì³öíîñò³ ïîñàäêè êðèñòàëà flatness ~ âèì³ðþâà÷ ïëîùèííî¿ high-speed ~ âèñîêîïðîäóêòèâíèé âèïðîáóâàëüíèé ïðèñòð³é laser-based ~ ëàçåðíèé òåñòåð (äëÿ ïåðåâ³ðêè ²Ñ) lead pull ~ óñòàíîâêà äëÿ âèïðîáóâàííÿ âèâîä³â íà â³äðèâ logic ~ âèïðîáóâàëüíà óñòàíîâêà äëÿ ëîã³÷íèõ ²Ñ LSI board ~ âèïðîáóâàëüíèé ïðèñòð³é äëÿ äðóêîâàíî¿ ïëàò³ ç Â²Ñ moisture ~ âîëîãîì³ð; ã³ãðîìåòð stick-to-stick bubble ~ áóëüáàøêîâèé âòðàòîøóêà÷ ç ðîçáðàêîâóâàííÿì ïåðåâ³ðåíèõ êîðïóñ³â ó â³äïîâ³äí³ ìàãàçèíè tape ðåål ~ ïðèëàä äëÿ âèçíà÷åííÿ çóñèëëÿ äëÿ â³äðèâó çàõèñíî¿ ñòð³÷êè (â³ä ñòð³÷êè ç êîìïîíåíòîì ïîâåðõíåâîãî ìîíòàæó) thickness ~ òîâùèíîì³ð testing 1. âèïðîáóâàííÿ 2. ïåðåâ³ðêà; êîíòðîëü 3. òåñòóâàííÿ àñ ~ äèíàì³÷íå òåñòóâàííÿ
bare-board ~ ïåðåâ³ðêà íåçìîíòîâàíî¿ äðóêîâàíî¿ ïëàòè built-in ~ âáóäîâàíå òåñòóâàííÿ burn-in ~ ôîðñîâàí³ âèïðîáóâàííÿ, âèïðîáóâàííÿ íà ïðèìóñîâó â³äìîâó chip ~ ïåðåâ³ðêà êðèñòàë³â (²Ñ) dc VLSI ~ ñòàòè÷íå òåñòóâàííÿ ÍÂ²Ñ (áåç ïåðåâ³ðêè òèì÷àñîâèõ ñï³ââ³äíîøåíü) delay ~ òåñòóâàííÿ òèì÷àñîâèõ ïàðàìåòð³â Â²Ñ dye-ðånetrant ~ ïåðåâ³ðêà ãåðìåòè÷íîñò³ (êîðïóñ³â) ìåòîäîì çàíóðåííÿ ó ôàðáíèê dynamic ~ äèíàì³÷íå òåñòóâàííÿ field ~ òåñòóâàííÿ ïðè âèçíà÷åíí³ ãîäíèõ ñõåì free-race ~ áåçãîíî÷íîå òåñòóâàííÿ (²Ñ) guided-probe ~ 1. òåñòóâàííÿ ç â³äîìèì çîíäîì 2. çîíäîâèé ïîøóê íåñïðàâíîñòåé hard ~ àïàðàòóðíå òåñòóâàííÿ (²Ñ) harness ~ òåñòóâàííÿ äæãóò³â high-throughput ~ âèñîêîïðîäóêòèâí³ âèïðîáóâàííÿ in-isolation ~ àâòîíîìíå òåñòóâàííÿ; ïîçàñõåìíå òåñòóâàííÿ (²Ñ) mutation ~ ìóòàö³éíå òåñòóâàííÿ non-invasive ~ íåðóéí³âíå âèïðîáóâàííÿ on-line ~ ôóíêö³îíàëüíà ä³àãíîñòèêà, ÿêà çä³éñíþºòüñÿ ï³ä ÷àñ ôóíêö³îíóâàííÿ Â²Ñ on-wafer chip ~ ïåðåâ³ðêà êðèñòàë³â (²Ñ) íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ qualification ~ êâàë³ô³êàö³éí³ âèïðîáóâàííÿ seal ~ ïåðåâ³ðêà (êîðïóñó ²Ñ) íà ãåðìåòè÷í³ñòü start-small ~ òåñòóâàííÿ ìåòîäîì ÿäðà, ùî ðîçøèðÿºòüñÿ static ~ ñòàòè÷íå òåñòóâàííÿ stimulus-response ~ òåñòóâàííÿ ìåòîäîì «ñòèìóë–ðåàêö³ÿ–ïîð³âíÿííÿ» temperature-chamber ~ âèïðîáóâàííÿ â êàìåð³ äëÿ êë³ìàòè÷íèõ âèïðîáóâàíü tetraborate: litium ~ òåòðàáîðàò ë³ò³þ (àêòèâíèé ìàòåð³àë äëÿ ïðèëàä³â íà ÏÀÕ) tetrachloride: silicon ~ òåòðàõëîðèä êðåìí³þ, SiCl4 tetrachlorodifluoromethane òåòðàõëîðäèôòîðìåòàí (ðîç÷èííèê) tetrachloroethylene òåòðàõëîðåòèëåí (ðîç÷èííèê) tetrafluoride:
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tim carbon ~ òåòðàôòîðî¿ä âóãëåöþ (äëÿ ðåàêòèâíîãî òîãî, ùî ³îííîãî òðàâëåííÿ) TFT (thin-film transistor) òîíêîïë³âêîâèé òðàíçèñòîð polysilicon ~ ïîë³êðåìí³ºâèé òîíêîïë³âêîâèé òðàíçèñòîð self-aligned silicon gate ~ òîíêîïë³âêîâèé òðàíçèñòîð ç êðåìí³ºâèì ñàìîñóì³ùåíèì çàòâîðîì theorem: fixed-point ~ òåîðåìà ïðî íåðóõîìó òî÷êó gap ~ òåîðåìà ïðî ïðîì³æîê theory òåîð³ÿ band ~ solids çîííà òåîð³ÿ òâåðäèõ ò³ë band tailing ~ òåîð³ÿ çîííîãî ðîçìèòòÿ BCS ~ òåîð³ÿ Áàðä³íà–Êóïåðà–Øð³ôôåðà, òåîð³ÿ ÁÊØ dislocation ~ òåîð³ÿ äèñëîêàö³é domain ~ òåîð³ÿ äîìåí³â scaling ~ òåîð³ÿ ìàñøòàáóâàííÿ, òåîð³ÿ ïðîïîðö³éíîãî çìåíøåííÿ ðîçì³ð³â (åëåìåíò³â ²Ñ) Shockley-Read-Hall ~ òåîð³ÿ Øîê볖гäà– Õîëëà transport ~ òåîð³ÿ ïåðåíîñó thermistor òåðìîðåçèñòîð, òåðì³ñòîð thermocompression òåðìîêîìïðåñ³ÿ, òåðìîêîìïðåñ³éíà çâàðêà thermocycling òåðìîöèêëþâàííÿ thermode òåðìîä (åëåêòðè÷íî íàãð³âíèé åëåìåíò äëÿ ïàÿííÿ êîìïîíåíò³â ïîâåðõíåâîãî ìîíòàæó) thermography òåðìîãðàô³ÿ, ôîòîãðàôóâàííÿ â ²×-ä³àïàçîíå thermometer òåðìîìåòð infrared radiation [IR] ~ ³íôðà÷åðâîíèé [²×-]òåðìîìåòð thermomigration òåðìîì³ãðàö³ÿ thermoplastic 1. òåðìîïëàñò, òåðìîïëàñòè÷íà ïëàñòìàñà 2. òåðìîïëàñòè÷íèé thermopower òåðìîåëåêòðîðóø³éíà ñèëà, òåðìîÅÐÑ thermoset 1. ðåàêòîïëàñò, òåðìîðåàêòèâíà ïëàñòìàñà 2. òâåðäíóòè, òâåðäíóòè thick-film 1. òîâñòîïë³âêîâà Ã²Ñ 2. òîâñòîïë³âêîâèé ðåçèñòîð 3. òîâñòîïë³âêîâèé thickness òîâùèíà coating ~ òîâùèíà ïîêðèòòÿ
critical layer ~ êðèòè÷íà òîâùèíà øàðó (â ìîëåêóëÿðíî-ïðîìåíåâ³é åï³òàêñ³¿) gate-îõide ~ òîâùèíà îêñèäíîãî øàðó çàòâîðà thin-film 1. òîíêîïë³âêîâà Ã²Ñ 2. òîíêîïë³âêîâèé ðåçèñòîð 3. òîíêîïë³âêîâèé on-circuit ~ òîíêîïë³âêîâèé ðåçèñòîð, ñôîðìîâàíèé íà êðèñòàë³ íàï³âïðîâ³äíèêîâî¿ ²Ñ thinning: chemical ~ çìåíøåííÿ òîâùèíè ìàòåð³àëó õ³ì³÷íèì ìåòîäîì (íàïð. õ³ì³÷íèì òðàâëåííÿ) threshold: damage ~ ïîðîãîâå äåôåêòîóòâîðåííÿ field ~ 1. ïîðîãîâà íàïðóãà ïîëüîâîãî òðàíçèñòîðà 2. ïîðîãîâà íàïðóæåí³ñòü ïîëÿ logic ~ ëîã³÷íèé ïîð³ã, ëîã³÷íèé ïîðîãîâèé ð³âåíü voltage ~ ïîðîãîâà íàïðóãà through: feed ~s âåðòèêàëüí³ ç’ºäíàííÿ (ì³æ äåê³ëüêîìà øàðàìè ìåòàë³çàö³¿ ²Ñ) potential ~ ïîòåíö³éíà ÿìà through-hole (ìåòàë³çîâàíå) íàñêð³çíèé îòâ³ð (â äðóêîâàí³é ïëàò³) throughput ïðîäóêòèâí³ñòü bonder ~ ïðîäóêòèâí³ñòü óñòàíîâêè òåðìîêîìïðåñ³éíî¿ çâàðêè channel ~ ïðîïóñêíà ñïðîìîæí³ñòü êàíàëó tightly-ðàñked ç âèñîêîþ ãóñòèíîþ óïàêîâêè, ç âèñîêîþ ãóñòèíîþ ðîçì³ùåííÿ åëåìåíò³â; ç ù³ëüíèì êîìïîíóâàííÿì tightness: leak ~ ãåðìåòè÷í³ñòü vacuum ~ ãåðìåòè÷í³ñòü tile ñòàíäàðòíèé åëåìåíò; êîì³ðêà (â á³áë³îòåö³ ñòàíäàðòíèõ åëåìåíò³â) time 1. ÷àñè 2. òàêò | õðîí³çóâàòè; ñèíõðîí³çàâàòè àñcess ~ ÷àñ äîñòóïó (äî ÇÏ); ÷àñ âèá³ðêè (³ç ÇÏ) àñtuation ~ ÷àñ ñïðàöüîâóâàííÿ bond ~ ÷àñ òåðìîêîìïðåñ³éíî¿ çâàðêè build-up ~ ÷àñ íàðîñòàííÿ; ÷àñ âñòàíîâëåííÿ capture ~ ÷àñ çàõîïëåííÿ íîñ³¿â carrier-transit ~ ÷àñ ïðîëüîòó íîñ³¿â choice reaction ~ ÷àñ óõâàëåííÿ ð³øåííÿ conversation ~ ÷àñ ïåðåòâîðåííÿ
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tom cool-down ~ ÷àñ îõîëîäæóâàííÿ cure ~ ÷àñ çàòâåðä³ííÿ ñócle ~ òðèâàë³ñòü öèêëó delay ~ ÷àñ çàòðèìêè design-to-delivery ~ ÷àñ â³ä ðîçðîáêè ïðèëàäó äî ïîñòàâêè design turnaround ~ ÷àñ ðîçðîáêè ïðèëàäó (â³ä âèäà÷³ ïðîåêòíîãî çàâäàííÿ äî âèïóñêó äîñë³äíèõ çðàçê³â) drive ~ ÷àñ ðîçãîíó äîì³øêè dwell ~ ÷àñ âèêîíàííÿ îïåðàö³¿; ÷àñ 䳿 exposure ~ ÷àñ åêñïîíóâàííÿ fall ~ ÷àñ ñïàäó functional ~ ôóíêö³îíàëüíà ïðîäóêòèâí³ñòü (1. äîáóòîê ÷èñëà ëîã³÷íèõ åëåìåíò³â íà êðèñòàë³ íà òàêòîâó ÷àñòîòó ëîã³÷íîãî åëåìåíòó 2. äëÿ õàðàêòåðèñòèêè ÍزÑ: äîáóòîê ÷èñëà ëîã³÷íèõ åëåìåíò³â íà êðèñòàë³ íà òàêòîâó ÷àñòîòó ëîã³÷íîãî åëåìåíòó, ä³ëåíèé íà ïëîùó êðèñòàëà â ñì2) heat-up ~ ÷àñ ðîç³ãð³âàííÿ hold ~ ÷àñ óòðèìàííÿ (ëîã³÷íîãî ñòàíó) lead ~ ÷àñ â³ä ðîçðîáêè ïðèëàäó äî âèïóñêó life ~ 1. ÷àñ æèòòÿ íîñ³¿ 2. òåðì³í ñëóæáè propagation delay ~ ÷àñ çàòðèìêè ïîøèðåííÿ ñèãíàëó ramp ~ ÷àñ âèâîäó óñòàíîâêè â ðîáî÷èé ðåæèì RC ~ ïîñò³éíà ÷àñó recovery ~ ÷àñ â³äíîâëåííÿ response ~ ÷àñ ñïðàöüîâóâàííÿ rise ~ ÷àñ íàðîñòàííÿ; ÷àñ âñòàíîâëåííÿ run ~ ÷àñ ïðîãîíó ïðîãðàìè setting ~ ÷àñ óñòàíîâêè (â ïåâíå ïîëîæåííÿ) settling ~ ÷àñ âñòàíîâëåííÿ âèõ³äíî¿ íàïðóãè (îïåðàö³éíîãî ï³äñèëþâà÷à) set-up ~ ÷àñ âñòàíîâëåííÿ (â ïåâíèé ñòàí) storage ~ ÷àñ çáåð³ãàííÿ; ÷àñ íàêîïè÷åííÿ çàðÿäó switching delay ~ ÷àñ çàòðèìêè ïåðåìèêàííÿ transit ~ ÷àñ ïðîëüîòó transition ~ 1. ÷àñ ïåðåõîäó (ç îäíîãî ñòàíó â ³íøèé) 2. ÷àñ âñòàíîâëåííÿ triggering ~ ÷àñ ñïðàöüîâóâàííÿ turnaround ~ ÷àñ â³ä ðîçðîáêè ïðèëàäó äî âèïóñêó turn-off ~ ÷àñ âèêëþ÷åííÿ turn-on ~ ÷àñ âêëþ÷åííÿ wire routing ~ ÷àñ ôîðìóâàííÿ ðîçâîäêè
worst-case àñcess ~ ÷àñ âèá³ðêè äëÿ ÿêíàéã³ðøîãî âèïàäêó timing: unit ~ ñèíõðîí³çàö³ÿ ç îäèíè÷íîþ çàòðèìêîþ; ââåäåííÿ îäèíè÷íî¿ çàòðèìêè tin îëîâî, Sn tinned ëóäæåíèé tinning ëóä³ííÿ tip: bonding ~ çâàðþâàëüíèé ³íñòðóìåíò â óñòàíîâö³ òåðìîêîìïðåñ³éíî¿ çâàðêè field-emission ~ â³ñòðÿ ç àâòîåëåêòðîííîþ åì³ñ³ºþ; êàòîä ç àâòîåëåêòðîííîþ åì³ñ³ºþ soldering ~ æàëî ïàÿëüíèêà titanate: barium ~ òèòàíàò áàð³þ, BaTiO3 lead zirconate ~ öèðêîíàò–òèòàíàò ñâèíöþ, ÖÒÑ titania ä³îêñèä òèòàíà, ÒiO2 titanium òèòàí, Òi toggle òðèãåð; á³ñòàá³ëüíà ñõåìà | ïåðåìèêàòè ç îäíîãî ñòàíó â ³íøèé tolerance 1. äîïóñê 2. ñò³éê³ñòü alignment ~ äîïóñê íà ñóì³ùåííÿ alpha ~ ñò³éê³ñòü äî àëüôà-âèïðîì³íþâàííÿ beta ~ ñò³éê³ñòü äî áåòà-âèïðîì³íþâàííÿ close ~ äîïóñê ó âóçüêèõ ìåæàõ, æîðñòêèé äîïóñê design registration ~ ïðîåêòíèé äîïóñê íà ñóì³ùåííÿ fabrication ~ äîïóñê íà âèãîòîâëåííÿ, âèðîáíè÷èé äîïóñê fault ~ â³äìîâîñò³éê³ñòü loose ~ äîïóñê â øèðîêèõ ìåæàõ, âåëèêèé äîïóñê machining ~ äîïóñê ïðè ìåõàí³÷í³é îáðîáö³ manufacturing ~ äîïóñê íà âèãîòîâëåííÿ, âèðîáíè÷èé äîïóñê mask ~ äîïóñê íà òî÷í³ñòü âèãîòîâëåííÿ øàáëîíà parameter ~ äîïóñê ïî ïàðàìåòðó registration ~ äîïóñê íà ñóì³ùåííÿ resistor ~ äîïóñê íà íîì³íàë ðåçèñòîðà scaled ~ äîïóñê ïðè ìàñøòàáóâàíí³ tight ~ äîïóñê ó âóçüêèõ ìåæàõ, æîðñòêèé äîïóñê width ~ äîïóñê íà øèðèíó (íàïð. ñòðóìîïðîâ³äíèõ äîð³æîê) tomography:
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tra infrared ~ ²×-òîìîãðàô³ÿ (äëÿ âèÿâëåííÿ äåôåêò³â â ìàòåð³àë³) tool 1. ³íñòðóìåíò; ïðèñòîñóâàííÿ; îñíàùåííÿ (íàïð. ôîòîøàáëîíó) 2. óñòàíîâêà; âåðñòàò 3. ï³ääàâàòè ìåõàí³÷í³é îáðîáö³ 4. pl (³íñòðóìåíòàëüí³) çàñîáè analysis ~s ïðîöåäóðè àâòîìàòè÷íîãî àáî ³íòåðàêòèâíîãî âèçíà÷åííÿ õàðàêòåðèñòèê ñõåìè antistatic ~ ³íñòðóìåíò ç â³äâåäåííÿì çàðÿä³â ñòàòè÷íî¿ åëåêòðèêè artwork checking ~ ³íñòðóìåíò äëÿ êîíòðîëþ òîïîëî㳿 bonding ~ ³íñòðóìåíò äëÿ òåðìîêîìïðåñ³¿ CAD ~s çàñîáè àâòîìàòèçîâàíîãî ïðîåêòóâàííÿ CAE/CAD ~s çàñîáè àâòîìàòèçîâàíîãî êîíñòðóþâàííÿ ³ ïðîåêòóâàííÿ computer-aided ~ âåðñòàò, êåðîâàíèé ÅÎÌ computer-aided engeneering [computerbased design] ~s çàñîáè àâòîìàòèçîâàíîãî êîíñòðóþâàííÿ design synthesis ~s çàñîáè ñèíòåçó ïðîåêòó desoldering ~ ïðèñòîñóâàííÿ äëÿ äåìîíòàæó diamond scribe ~ 1. àëìàçíèé ð³çåöü 2. ñêðàéáåð ç àëìàçíèì ð³çöåì DIP/IC insertion ~ óñòàíîâêà äëÿ ìîíòàæó ²Ñ â DIP-êîðïóñè extraction ~ ïðèñòîñóâàííÿ äëÿ äåìîíòàæó hand ~ ðó÷íèé ³íñòðóìåíò insertion ~ óñòàíîâêà äëÿ ìîíòàæó êîìïîíåíò³â lead-forming ~ óñòàíîâêà äëÿ ôîðìóâàííÿ âèâîä³â lithography ~ ë³òîãðàô³÷íå óñòàòêóâàííÿ mask inspection ~ ïðèëàä äëÿ êîíòðîëþ ôîòîøàáëîí³â physical layout ~s çàñîáè ïðîåêòóâàííÿ òîïîëî㳿 ç óðàõóâàííÿì ðåàëüíèõ ô³çè÷íèõ ïàðàìåòð³â pick-up ~ ïðèñòîñóâàííÿ äëÿ çàõîïëåííÿ (íàïð. âàêóóìíèé ï³íöåò) placement ~ ìîíòàæíèé âåðñòàò; ìîíòàæíèé ïðèñòð³é process characterization ~ ïðèëàäè äëÿ êîíòðîëþ ÿêîñò³ òåõíîëîã³÷íîãî ïðîöåñó scribing ~ 1. ð³çåöü 2. ñêðàéáåð, óñòàíîâêà äëÿ ñêðàéáóâàííÿ software ~s ïðîãðàìí³ çàñîáè soldering ~ ïàÿëüíèê
sputtering ~ (âàêóóìíà) óñòàíîâêà äëÿ ðîçïèëþâàííÿ step-and-repeat ~ ôîòîïîâòîðþâà÷, ôîòîøòàìï wafer-reading ~ ³íñòðóìåíò äëÿ ïðî÷èòóâàííÿ ìàðê³ðîâêè íà íàï³âïðîâ³äíèêîâèõ ïëàñòèíàõ wire-wrapping ~ ³íñòðóìåíò äëÿ ìîíòàæó ìåòîäîì íàêðóòêè (íàïð. íàêðóòî÷íèé ï³ñòîëåò) work ~ ³íñòðóìåíò; ïðèñòîñóâàííÿ; îñíàùåííÿ tooling: custom ~ ñïåö³àë³çîâàíå îñíàùåííÿ; ñïåö³àë³çîâàí³ øàáëîíè (íàïð. äëÿ âèðîáíèöòâà ìàòðè÷íèõ ²Ñ) topography (ïîâåðõíåâèé) ðåëüºô, òîïîãðàô³ÿ double-crystal X-ray ~ äâîõêðèñòàëüíà ðåíòãåí³âñüêà òîïîãðàô³ÿ mesa-shaped ~ ðåëüºô ç ìåçàñòðóêòóðàìè planar ~ ïëîñêèé ðåëüºô wafer ~ ðåëüºô íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè X-ray ~ ðåíòãåí³âñüêà òîïîãðàô³ÿ topology òîïîëîã³ÿ layout ~ òîïîëîã³ÿ îðèã³íàëó planar silicon ~ òîïîëîã³ÿ ïëàíàðíîãî êðåìí³ºâîãî íàï³âïðîâ³äíèêîâîãî ïðèëàäó tree-line ~ äåðåâîâèäíà òîïîëîã³ÿ (²Ñ) trace: control flow ~ òðàñóâàííÿ ïåðåäà÷ óïðàâë³ííÿ data (flow) ~ òðàñóâàííÿ äàíèõ (â êðåìí³ºâèõ êîìï³ëÿòîðàõ) traceability: batch ~ ìîæëèâ³ñòü êîíòðîëþ ïîñë³äîâíîñò³ òåõíîëîã³÷íî¿ îáðîáêè ïàðò³¿ (íàïð. íàï³âïðîâ³äíèêîâèõ ïëàñòèí) tracing: forward ~ ïðÿìå äîñë³äæåííÿ; äîñë³äæåííÿ (ñèãíàëó) â³ä âõîä³â Â²Ñ äî âèõîä³â reverse ~ çâîðîòíº äîñë³äæåííÿ track 1. ñòðóìîïðîâ³äíà äîð³æêà 2. òðàíñïîðòåð, êîíâåéºð air ~ òðàíñïîðòåð íà ïîâ³òðÿí³é ïîäóøö³ conductive [conductor interconnection] ~ ñòðóìîïðîâ³äíà äîð³æêà polysilicon ~ ñòðóìîïðîâ³äíà äîð³æêà ç ïîë³êðèñòàë³÷íîãî êðåìí³þ
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tra processing ~ òðàíñïîðòåð äëÿ transient (íåñòàëèé) ïåðåõ³äíèé ïðîöåñ (ì³æîïåðàö³éíî¿) òðàíñïîðòóâàííÿ transistor òðàíçèñòîð resistor ~ ðåçèñòèâíà äîð³æêà alloy ~ ñïëàâíèé òðàíçèñòîð abrupt heterojunction bipolar ~ á³ïîëÿðíèé wire ~ äðîòÿíå ç’ºäíàííÿ; ñòðóìîïðîâ³äíà òðàíçèñòîð ç ð³çêèìè ð–n-ïåðåõîäàìè äîð³æêà transconductance êðóòèçíà access ~ âõ³äíèé òðàíçèñòîð conversion ~ êðóòèçíà ïåðåòâîðåííÿ amorphous ~ òðàíçèñòîð íà àìîðôíîìó transducer ïåðåòâîðþâà÷ íàï³âïðîâ³äíèêîâîìó ìàòåð³àë³ avalanche-injector MOS ~ ëàâèííîacoustoelectric ~ àêóñòîåëåêòðè÷íèé ³íæåêö³éíèé ÌÎÍ-òðàíçèñòîð ïåðåòâîðþâà÷ integrated ~ ³íòåãðàëüíèé ïåðåòâîðþâà÷, ²Ñ ballistic ~ òðàíçèñòîð ç áàë³ñòè÷íèì ïåðåíåñåííÿì íîñ³¿â çàðÿäó, áàë³ñòè÷íèé ïåðåòâîðþâà÷à òðàíçèñòîð magnetostriction ~ ìàãí³òîñòðèêö³éíèé barrier-emitter ~ á³ïîëÿðíèé òðàíçèñòîð ç ïåðåòâîðþâà÷ òóíåëüíèì áàð’ºðîì â åì³òåðí³é îáëàñò³ pressure ~ âèì³ðþâàëüíèé ïåðåòâîðþâà÷ beam-lead ~ òðàíçèñòîð ç áàëî÷íèìè [äàò÷èê] òèñêó âèâîäàìè transfer ïåðåäà÷à; ïåðåíåñåííÿ; ïåðåì³ùåííÿ | ïåðåäàâàòè; ïåðåíîñèòè; ïåðåì³ùàòè bipolar (junction) ~ á³ïîëÿðíèé òðàíçèñòîð bipolar quantum resonant tunneling ~ bubble ~ ïåðåäà÷à ÖÌÄ á³ïîëÿðíèé òðàíçèñòîð ç ðåçîíàíñíèì carrier ~ ïåðåíåñåííÿ íîñ³¿â çàðÿäó êâàíòîâèì òóíåëþâàííÿì cassette-based ~ (ì³æîïåðàö³éíà) buried-channel (MOS) ~ ÌÎÍ-òðàíçèñòîð òðàíñïîðòóâàííÿ (íàï³âïðîâ³äíèêîâèõ ç ïðèõîâàíèì êàíàëîì ïëàñòèí) â êàñåòàõ buried-îõide MOS ~ ÌÎÍ-òðàíçèñòîð ç dry ~ ïåðåíåñåííÿ ìàëþíêà ç êëåéêî¿ çàãëèáëåíèì îêñèäíèì øàðîì ñòð³÷êè íà îñíîâó charge-injection ~ ³íæåêö³éíèé òðàíçèñòîð dump ~ ãðóïîâå (ì³æîïåðàö³éíà) chip ~ áåçêîðïóñíèé òðàíçèñòîð òðàíñïîðòóâàííÿ (íàïð. chip-and-wire ~ òðàíçèñòîð ç äðîòÿíèì íàï³âïðîâ³äíèêîâèõ ïëàñòèí) ìîíòàæåì image [pattern] ~ ïåðåíåñåííÿ ìàëþíêà clamped ~ òðàíçèñòîð ç êîëåêòîðîì, pick-up ~ ïåðåíåñåííÿ (íàïð. êðèñòàë³â ²Ñ) øóíòîâàíèì ä³îäîì Øîòê³ çàõîïëåííÿìè (íàïð. âàêóóìíèìè) vacuum ~ ïåðåíåñåííÿ closed-gate MOS ~ ÌÎÍ-òðàíçèñòîð ³ç çàìêíóòèì çàòâîðîì (íàï³âïðîâ³äíèêîâèõ ïëàñòèí) âàêóóìíèìè ï³íöåòàìè collector-grounded ~ á³ïîëÿðíèé wafer ~ (ì³æîïåðàö³éíà) òðàíñïîðòóâàííÿ òðàíçèñòîð ³ç çàçåìëåíèì êîëåêòîðîì íàï³âïðîâ³äíèêîâèõ ïëàñòèí common-base ~ òðàíçèñòîð, âêëþ÷åíèé ïî transform ïåðåòâîðåííÿ | ïåðåòâîðþâàòè ñõåì³ ³ç çàãàëüíîþ áàçîþ discrete Fourier ~ äèñêðåòíå ïåðåòâîðåííÿ common-collector ~ òðàíçèñòîð, âêëþ÷åíèé Ôóðüå ïî ñõåì³ ³ç çàãàëüíèì êîëåêòîðîì fast Fourier ~ øâèäêå ïåðåòâîðåííÿ Ôóðüå common-emitter ~ òðàíçèñòîð, âêëþ÷åíèé inverse Fourier ~ çâîðîòíå ïåðåòâîðåííÿ ïî ñõåì³ ³ç çàãàëüíèì åì³òåðîì Ôóðüå complementary ~s êîìïëåìåíòàðí³ transformation 1. ïåðåòâîðåííÿ 2. ôàçîâèé òðàíçèñòîðè ïåðåõ³ä composite ~ ñêëàäîâèé òðàíçèñòîð laser-induced ~ ëàçåðíî-ñòèìóëþþ÷å Darlington ~ ïàðà Äàðë³íãòîíà ïåðåòâîðåííÿ; ëà-çåðíî-ñòèìóëþþ÷èé deep depletion ~ òðàíçèñòîð ç ôàçîâèé ïåðåõ³ä ãëèáîêîçá³äíåíèì øàðîì tetragonal-to-orthorhombic phase ~ deep-diode ~ òðàíçèñòîð ³ç ñòðóêòóðîþ ôàçîâèé ïåðåõ³ä â³ä ãðàòîê òåòðàãîíà äî ãëèáîêîãî ä³îäà îðòîðîìá³÷íî¿
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tra depletion(-mode) MOS ~ ÌÎÍ-òðàíçèñòîð, ùî ïðàöþº â ðåæèì³ çá³äíåííÿ diffused-emitter-and-base òðàíçèñòîð ç äèôóç³éíèì åì³òåðîì ³ áàçîþ diffused planar ~ ïëàíàðíèé òðàíçèñòîð á-doped field-effect ~ ïîëüîâèé òðàíçèñòîð ç á-ëåãîâàíèì êàíàëîì double-diffused MOS ~ ÌÎÍ-òðàíçèñòîð, âèãîòîâëåíèé ìåòîäîì ïîäâ³éíî¿ äèôó糿, äâîõäèôóç³éíèé ÌÎÍ-òðàíçèñòîð, ÄÌÎÍòðàíçèñòîð double-heterojunction bipolar ~ äâîõãåòåðîïåðåõ³äíèé á³ïîëÿðíèé òðàíçèñòîð double-implanted MOS ~ ÌÎÍ-òðàíçèñòîð, âèãîòîâëåíèé ìåòîäîì ïîäâ³éíî¿ ³îííî¿ ³ìïëàíòàö³¿ downward-scaled MOS ~ ÌÎÍ-òðàíçèñòîð ç ïðîïîðö³éíî çìåíøåíèìè ðîçì³ðàìè åëåìåíò³â electrostatic induction ~ åëåêòðîñòàòè÷íèé ³íäóêö³éíèé òðàíçèñòîð emitter-coupled ~ áàãàòîåì³òåðíèé òðàíçèñòîð enhancement(-mode) MOS ~ ÌÎÍòðàíçèñòîð, ùî ïðàöþº â ðåæèì³ çáàãà÷åííÿ epibase ~ òðàíçèñòîð ç åï³òàêñ³àëüíî¿ áàçîþ epitaxial (planar) ~ (ïëàíàðíî)åï³òàêñ³àëüíèé òðàíçèñòîð fan-out ~ òðàíçèñòîð íàâàíòàæåííÿ fast switching ~ øâèäêîä³éíèé òðàíçèñòîð ïåðåìèêà÷à field-effect ~ ïîëüîâèé òðàíçèñòîð (äèâ. òæ FET) filamentary ~ íèòêîïîä³áíèé òðàíçèñòîð floating-gate MOS ~ ÌÎÍ-òðàíçèñòîð ç ïëàâàþ÷èì çàòâîðîì front-end ~ âõ³äíèé òðàíçèñòîð gate-modulated bipolar ~ á³ïîëÿðíèé òðàíçèñòîð ç ìîäóëüîâàíèì çàòâîðîì (êîìá³íàö³ÿ ïîëüîâîãî ³ á³ïîëÿðíîãî òðàíçèñòîð³â) GIMIC ~ ³íòåãðàëüíèé òðàíçèñòîð ç ³çîëþþ÷èì îõîðîííèì ê³ëüöåì grooved-gate MOS ~ ÌÎÍ-òðàíçèñòîð ç Vîáðàçíîé êàíàâêîþ heterojunction ~ òðàíçèñòîð íà ãåòåðîïåðåõîäàõ, ãåòåðîòðàíçèñòîð high-electron mobility ~ òðàíçèñòîð ç âèñîêîþ ðóõëèâ³ñòþ åëåêòðîí³â
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high-ðårformance ~ âèñîêîÿê³ñíèé òðàíçèñòîð H-MOS ~ âèñîêîÿê³ñíèé ÌÎÍ-òðàíçèñòîð homojunction ~ òðàíçèñòîð íà ãîìîïåðåõîäàõ hot-electron ~ òðàíçèñòîð íà ãàðÿ÷èõ åëåêòðîíàõ integrated (circuit) ~ ³íòåãðàëüíèé òðàíçèñòîð, òðàíçèñòîð ²Ñ interdigitated ~ òðàíçèñòîð ³ç ñòð³÷íîãðåá³í÷àñòîþ åì³òåð íèé ñòðóêòóðîþ inverted ~ îáåðíóòèé òðàíçèñòîð ion-implanted base ~ òðàíçèñòîð ç ³îííî³ìïëàíòîâàíîþ áàçîþ junction ~ ïëîùèííèé òðàíçèñòîð, òðàíçèñòîð ç (ð–n-) ïåðåõîäàìè lateral ~ ãîðèçîíòàëüíèé òðàíçèñòîð, òðàíçèñòîð ç ãîðèçîíòàëüíîþ ñòðóêòóðîþ load ~ òðàíçèñòîð íàâàíòàæåííÿ low-power ~ ìàëîïîòóæíèé òðàíçèñòîð memory ~ ùî çàïàì’ÿòîâóº òðàíçèñòîð merged ~ òðàíçèñòîð ç ôóíêö³îíàëüíîñóì³ùåíèìè îáëàñòÿìè mesa(-type)~ ìåçàòðàíçèñòîð, òðàíçèñòîð ç ìåçàñòðóêòóðîþ mesh-emitter ~ òðàíçèñòîð ç åì³òåðîì êîì³ðêîâîãî òèïó metal-alumina-semiconductor ~ ÌÀÍòðàíçèñòîð ç ³çîëþþ÷èì øàðîì çàòâîðà ç îêñèäó àëþì³í³þ metal-base ~ òðàíçèñòîð ç ìåòàëåâîþ áàçîþ metal-gate MOS ~ ÌÎÍ-òðàíçèñòîð ç ìåòàëåâèì çàòâîðîì metal-insulator-semiconductor ~ òðàíçèñòîð ³ç ñòðóêòóðîþ òèïó ìåòàë– ä³åëåêòðèê–íàï³âïðîâ³äíèê, ÌÄÍòðàíçèñòîð metal-nitride-îõide-semiconductor ~ òðàíçèñòîð ³ç ñòðóêòóðîþ ìåòàë–í³òðèä– îêñèä–íàï³âïðîâ³äíèê, ÌÍÎÍ-òðàíçèñòîð metal-îõide-semiconductor òðàíçèñòîð ³ç ñòðóêòóðîþ ìåòàë–îêñèä–íàï³âïðîâ³äíèê, ÌÎÍ-òðàíçèñòîð micropower ~ ì³êðîìîãóòí³é òðàíçèñòîð monoiythic hot-electron ~ ìîíîë³òíèé òðàíçèñòîð íà ãàðÿ÷èõ åëåêòðîíàõ (äëÿ øèðîêîñìóãîâèõ ³íòåãðàëüíèõ ï³äñèëþâà÷³â) multiemitter [multiple-emitter] ~ áàãàòîåì³òåðíèé òðàíçèñòîð
tra multiple integrated ~ ³íòåãðàëüíèé series(-connected)~s ïîñë³äîâíî ñïîëó÷åí³ êîìá³íîâàíèé òðàíçèñòîð (ùî ñêëàäàºòüñÿ òðàíçèñòîðè ç ãîðèçîíòàëüíîãî ³ âåðòèêàëüíîãî shallow-junction ~ òðàíçèñòîð ç äð³áíèìè òðàíçèñòîð³â) (ì³ëêèìè) ïåðåõîäàìè n-channel MOS ~ ÌÎÍ-òðàíçèñòîð ç silicon-gate (MOS) ~ ÌÎÍ-òðàíçèñòîð ç êàíàëîì n-òèïó, n-êàíàëüíèé ÌÎÍêðåìí³ºâèì çàòâîðîì òðàíçèñòîð, n-ÌÎÍ-òðàíçèñòîð silicon-on-sapphire ~ òðàíçèñòîð ³ç negative-impedance ~ òðàíçèñòîð ç ñòðóêòóðîþ òèïó «êðåìí³é íà ñàïô³ð³», íåãàòèâíèì ïîâíèì îïîðîì òðàíçèñòîð ç ÊÍÑ-ñòðóêòóðîþ n-p-n ~ n–p–n-òðàíçèñòîð stacked ~ áàãàòîð³âíåâèé òðàíçèñòîð off ~ çàêðèòèé òðàíçèñòîð static induction ~ ñòàòè÷íèé ³íäóêö³éíèé on ~ â³äêðèòèé òðàíçèñòîð òðàíçèñòîð, Ñ²Ò (ïîëüîâèé òðàíçèñòîð ç ð– optical [optoelectronic] ~ ôîòîòðàíçèñòîð n-ïåðåõîäîì ³ âåðòèêàëüíèì êàíàëîì) (äèâ. overlay ~ áàãàòîåì³òåðíèé òðàíçèñòîð ò-æ SIT) parasitic ~ ïàðàçèòíèé òðàíçèñòîð stepped electrode ~ òðàíçèñòîð ç pass-gate ~ (³íòåãðàëüíèé) ïåðåìèêàþ÷èé âèñòóïàþ÷èìè åëåêòðîäàìè ïîëüîâèé òðàíçèñòîð superconducting ~ íàäïðîâ³äíèé p-channel (MOS) ~ ÌÎÍ-òðàíçèñòîð ç òðàíçèñòîð êàíàëîì ð-òèïó, ð-êàíàëüíèé ÌÎÍsurface-barrier ~ òðàíçèñòîð ç ïîâåðõíåâèì òðàíçèñòîð, ð-ÌÎÍ-òðàíçèñòîð áàð’ºðîì permeable-base ~ òðàíçèñòîð ç ïðîíèêíîþ surface-charge ~ òðàíçèñòîð ç ïîâåðõíåâèì áàçîþ çàðÿäîì piezo ~ ï’ºçîòðàíçèñòîð switching(-type)~ òðàíçèñòîð ïåðåìèêà÷à planar ~ ïëàíàðíèé òðàíçèñòîð tandem ~ ñêëàäîâèé òðàíçèñòîð planar epitaxial ~ ïëàíàðíî-åï³òàêñ³àëüíèé thin-film ~ òîíêîïë³âêîâèé òðàíçèñòîð òðàíçèñòîð T-MOS ~ ÌÎÍ-òðàíçèñòîð ç ù³ëèñòîþ plastic ~ òðàíçèñòîð â ïëàñòìàñîâîìó (âåðòèêàëüíî¿) ñòðóêòóðîþ êîðïóñ³ trap-controlled ~ òðàíçèñòîð ç p-n-p ~ p–n–p-òðàíçèñòîð êîíòðîëüîâàíèìè ïàñòêàìè pull-up ~ òðàíçèñòîð íàâàíòàæåííÿ tunnel emitter ~ òðàíçèñòîð ç òóíåëüíèì punch-through ~ ïîëüîâèé òðàíçèñòîð ³ç åì³òåðîì ñòóëåííÿì unijunction ~ îäíîïåðåõ³äíèé òðàíçèñòîð, quantum-effect ~ òðàíçèñòîð íà êâàíòîâîìó äâîõáàçîâèé ä³îä åôåêò³, êâàíòîâî-ðîçì³ðíèé òðàíçèñòîð unipolar ~ ïîëüîâèé òðàíçèñòîð (äèâ. ò-æ quantum wire ~ òðàíçèñòîð íà êâàíòîâîìó FET) äðîò³ vertical ~ âåðòèêàëüíèé òðàíçèñòîð, radio-frequency ~ âèñîêî÷àñòîòíèé [Â×òðàíçèñòîð ç âåðòèêàëüíîþ ñòðóêòóðîþ ]òðàíçèñòîð XMOS ~ ÌÎÍ-òðàíçèñòîð ç X-ïîä³áíîþ recessed-gate (MOS) ~ ÌÎÍ-òðàíçèñòîð ç ñòðóêòóðîþ V-ïîä³áíèì çàòâîðîì 3D trench ~ òðèâèì³ðíèé òðàíçèñòîð ç resonant-gate ~ òðàíçèñòîð ç ðåçîíàíñíèì ù³ëèñòîþ ñòðóêòóðîþ (äëÿ ìåãàá³òîâèõ ÇÏ) çàòâîðîì transit: Schottky ~ òðàíçèñòîð Øîòê³ carrier ~ ïðîë³ò íîñ³¿â Schottky(-barrier) collector [Schottky-diode transition (ôàçîâèé) ïåðåõ³ä, (ôàçîâå) clamped] òðàíçèñòîð ç ïåðåõîäîì êîëåêòîðà ïåðåòâîðåííÿ íà áàð’ºð³ Øîòê³ abrupt ~ ð³çêèé ïåðåõ³ä Schottky gated ~ ïîëüîâèé òðàíçèñòîð ³ç Auger ~ îæå-ïåðåõ³ä çàòâîðîì Øîòê³ band-to-band ~ ì³æçîííèé ïåðåõ³ä (íîñ³¿â sealed ~ ãåðìåòèçîâàíèé òðàíçèñòîð çàðÿäó) compositional ~ (ð³çêå) çì³íà ñêëàäó
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tre direct ~ ïðÿìèé ïåðåõ³ä electron ~ åëåêòðîííèé ïåðåõ³ä emission ~ âèïðîì³íþâàëüíèé ïåðåõ³ä high-low ~ ïåðåõ³ä òèïó ñèëüíîëåãîâàíèé íàï³âïðîâ³äíèê–ñëàáîëåãîâàíèé íàï³âïðîâ³äíèê hyper-abrupt (doping) ~ ïåðåõ³ä ç íàäð³çêèì ïðîô³ëåì ëåãóâàííÿ indirect ~ íåïðÿìèé ïåðåõ³ä intervalley (carrier) ~ ì³æäîëèííèé ïåðåõ³ä metal-insulator ~ ïåðåõ³ä ìåòàë–ä³åëåêòðèê nonradiative [radiationless] ~ áåçâèïðîì³íþâàëüíèé ïåðåõ³ä reversible [reversive] ~ çâîðîòíèé ïåðåõ³ä sharp ~ ð³çêèé ïåðåõ³ä superconducting ~ ïåðåõ³ä â íàäïðîâ³äíèé ñòàí (ïðî íàäïðîâ³äíèê) translation 1. çñóâ, çì³ùåííÿ; ïåðåíåñåííÿ; ïåðåì³ùåííÿ 2. ïàðàëåëüíå ïåðåíåñåííÿ, òðàíñëÿö³ÿ (àòîì³â â êðèñòàë³÷íèõ ãðàòîêàõ) transmission: light ~ ïðîïóñêàííÿ ñâ³òëà signal ~ ïåðåäà÷à ñèãíàë³â transport ïåðåíåñåííÿ; ïåðåì³ùåííÿ; (ì³æîïåðàö³éíà) òðàíñïîðòóâàííÿ | ïåðåíîñèòè; ïåðåì³ùàòè; òðàíñïîðòóâàòè air ~ òðàíñïîðòóâàííÿ (íàïð. íàï³âïðîâ³äíèêîâèõ ïëàñòèí) íà ïîâ³òðÿí³é ïîäóøö³; ïíåâìîòðàíñïîðòóâàííÿ ballistic ~ áàë³ñòè÷íå ïåðåíåñåííÿ belt ~ òðàíñïîðòóâàííÿ (íàïð. íàï³âïðîâ³äíèêîâèõ ïëàñòèí) íà ñòð³÷êîâîìó òðàíñïîðòåð³ carrier ~ ïåðåíåñåííÿ íîñ³¿â çàðÿäó cassette-to-cassette wafer ~ òðàíñïîðòóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí ç êàñåòè â êàñåòó; ïîäà÷à íàï³âïðîâ³äíèêîâèõ ïëàñòèí ç êàñåòè â êàñåòó high-field ~ ïåðåíåñåííÿ (íàïð. åëåêòðîí³â) â ñèëüíîìó åëåêòðè÷íîìó ïîë³ jet ~ òðàíñïîðòóâàííÿ (íàïð. íàï³âïðîâ³äíèêîâèõ ïëàñòèí) íà ïîâ³òðÿí³é ïîäóøö³; ïíåâìîòðàíñïîðòóâàííÿ surface-recombination ~ ïåðåíåñåííÿ íîñ³¿ çàðÿäó çà ðàõóíîê ïîâåðõíåâî¿ ðåêîìá³íàö³¿ vapor(-phase)~ ïåðåíåñåííÿ (íàïð. äîì³øêè) â ïàðîâ³é ôàç³
wafer ~ òðàíñïîðòóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí; ïîäà÷à íàï³âïðîâ³äíèêîâèõ ïëàñòèí transporter òðàíñïîðòåð, êîíâåéºð trap ïàñòêà, öåíòð çàõîïëåííÿ | çàõîïëþâàòè carrier ~ öåíòð çàõîïëåííÿ íîñ³¿â cold ~ õîëîäíà ïàñòêà (ä³ëÿíêà ïîâåðõí³, ï³äêëàäêè, íà ÿêîìó êîíäåíñóþòüñÿ ïàðè) deep ~ ãëèáîêà ïàñòêà electron ~ åëåêòðîííà ïàñòêà, öåíòð çàõîïëåííÿ åëåêòðîí³â hole ~ ä³ðêîâà ïàñòêà, öåíòð çàõîïëåííÿ ä³ðîê interface ~ ì³æôàçíà ïàñòêà long-lived ~ ïàñòêà ç âåëèêèì ÷àñîì æèòòÿ shallow ~ äð³áíà (ì³ëêà) ïàñòêà tray ï³ääîí; ëîòîê (ç êîìïîíåíòàìè); êàñåòà transfer ~ ëîòîê äëÿ (ì³æîïåðàö³éíî¿) òðàíñïîðòóâàííÿ; êàñåòà äëÿ (ì³æîïåðàö³éíî¿) ïîäà÷³ vibratory ~ â³áðàö³éíèé ëîòîê; â³áðàö³éíå ïîäàþ÷å ïðèñòð³é wafer ~ êàñåòà äëÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí wash ~ ïðîìèâàëüíèé ëîòîê; ïðîìèâàëüíà êàñåòà treater: electronic water ~ óñòàíîâêà äëÿ âîäîï³äãîòîâêè ó âèðîáíèöòâ³ åëåêòðîííèõ ïðèëàä³â treatment (òåõíîëîã³÷íà) îáðîáêà anodic ~ àíîäóâàííÿ antistatic surface ~ àíòèñòàòè÷íà îáðîáêà ïîâåðõí³ diffusion ~ äèôóç³ÿ etching ~ îáðîáêà òðàâëåííÿì heat ~ òåðì³÷íà îáðîáêà, òåðìîîáðîáêà heat îõidation ~ òåðì³÷íå [âèñîêîòåìïåðàòóðíå] îêñèäóâàííÿ laser ~ ëàçåðíà îáðîáêà plasma ~ ïëàçìîâà îáðîáêà post heat ~ ï³ñëÿîïåðàö³éíà òåðìîîáðîáêà thermal ~ òåðì³÷íà îáðîáêà, òåðìîîáðîáêà treeing ïîòîâùåííÿ (íà êðàÿõ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè ïðè åëåêòðîë³òè÷íîìó îñàäæåíí³ øàð³â) trench êàíàâêà; ïîãëèáëåííÿ isolation ~ ³çîëþþ÷à êàíàâêà oxide isolation ~ ³çîëþþ÷à êàíàâêà, çàïîâíåíà îêñèäîì êðåìí³þ
223
tun recessed ~ ïîãëèáëåíà (V-ïîä³áíà) êàíàâêà silicon ~ êàíàâêà â êðåìí³ºâ³é ï³äêëàäö³ tribromide: boron ~ òðüîõáðîìèñòèé á³ð, ÂBr3 trichloride: boron ~ òðüîõõëîðèñòèé á³ð ÂÑl3 phosphorous ~ òðüîõõëîðèñòèé ôîñôîð, PCl3 trichloroethylene òðèõëîðåòèëåí, òðüîõõëîðèñòèé åòèëåí (ðîç÷èííèê) trichloromonofluoromethane òðèõëîðìîíîôòîðìåòàí (ðîç÷èííèê) trichlorotrifluoroethane òðèõëîðòðèôòîðåòàí (ðîç÷èííèê) trifluoride: bromine ~ òðüîõôòîðèñòèé áðîì, BrF3 chlorine ~ òðüîõôòîðèñòèé õëîð, GlF3 iodine ~ òðüîõôòîðèñòèé éîä, IF3 nitrogen ~ òðüîõôòîðèñòèé àçîò, NF3 trigger 1. òðèãåð; ñõåìà òðèãåðà 2. çàïóñêàþ÷èé ñèãíàë | çàïóñêàòè; â³äìèêàòè; ñïðàöüîâóâàòè Schmitt ~ òðèãåð Øì³òòà triggering çàïóñê; â³äìèêàííÿ; ñïðàöüîâóâàííÿ repeated ~ áàãàòîêðàòíèé çàïóñê trim 1. ï³äãîíêà (íîì³íàë³â) | ï³äãàíÿòè (íîì³íàëè) 2. ï³äñòðîþâàííÿ | ï³äñòðîþâàòè fine ~ 1. òî÷íà ï³äãîíêà 2. òî÷íå ï³äñòðîþâàííÿ trimmability ìîæëèâ³ñòü ï³äãîíêè (íàïð. ïë³âêîâèõ ðåçèñòîð³â) trimmer 1. ï³äñòðîº÷íèé êîíäåíñàòîð 2. ï³äñòðîº÷íèé ðåçèñòîð 3. óñòàíîâêà äëÿ ï³äãîíêè (íîì³íàë³â) cermet ~ êåðìåòíèé ï³äñòðîº÷íèé ðåçèñòîð laser ~ óñòàíîâêà äëÿ ëàçåðíî¿ ï³äãîíêè trimming 1. ï³äãîíêà (íîì³íàë³â) 2. ï³äñòðîþâàííÿ abrasive ~ àáðàçèâíà ï³äãîíêà àñtive substrate ~ ï³äãîíêà (ðåçèñòîð³â) íà àêòèâí³é ï³äêëàäö³ air abrasive jet ~ àáðàçèâíà ñòðóìåíåâà ï³äãîíêà electron-beam ~ åëåêòðîííî-ïðîìåíåâà ï³äãîíêà laser ~ ëàçåðíà ï³äãîíêà laser wafer ~ ëàçåðíà ï³äãîíêà (ðåçèñòîð³â) íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ lead ~ âèð³âíþâàííÿ âèâîä³â
off-chip ~ ï³äñòðîþâàííÿ çà äîïîìîãîþ íàâ³ñíèõ êîìïîíåíò³â on-chip ~ ï³äãîíêà ðåçèñòîð³â íàï³âïðîâ³äíèêîâèõ ²Ñ resistance [resistor] ~ ï³äãîíêà ðåçèñòîð³â triode: CATT [controlled avalanche transit-time] ~ êåðîâàíèé ëàâèííî-ïðîë³òíèé òðàíçèñòîð quantum-well tunnel ~ òóíåëüíèé òð³îä ç êâàíòîâèìè ÿìàìè, êâàíòîâîðàçì³ðíèé òóíåëüíèé òð³îä space-charge limited ~ òð³îä ç îáìåæåíèì îá’ºìíèì çàðÿäîì TED ~ òð³îä ç ïåðåíåñåííÿì åëåêòðîí³â, òð³îä íà åôåêò³ Ãàííà trioxide: antimony ~ òðèîêñèä ñóðìè, Sb2O3 arsenic ~ òðèîêñèä ìèø’ÿêó, As2O3 gallium ~ òðèîêñèä ãàë³þ, Ga2O3 troubleshooting â³äøóêàííÿ ³ óñóíåííÿ íåñïðàâíîñòåé liquid-crystal ~ â³äøóêàííÿ ³ óñóíåííÿ äåôåêò³â çà äîïîìîãîþ øàðó ð³äêîãî êðèñòàëà, íàíåñåíîãî íà âèð³á trough êàíàâêà; ïîãëèáëåííÿ Langmuir(-Blodgett dipping)~ âàííà Ëàíãìþðà–Áëîäæåòà (äëÿ âèðîùóâàííÿ íàäòîíêèõ ìîëåêóëÿðíèõ ïë³âîê) potential ~ ïîòåíö³àëüíà ÿìà silicon ~ êàíàâêà â êðåìí³¿ tub êèøåíÿ (äëÿ ôîðìóâàííÿ åëåìåíò³â ²Ñ) p-diffused [p-doped] ~ äèôóç³éíà êèøåíÿ (ç åëåêòðîïðîâ³äí³ñòþ) ð-òèïó tube òðóáà; òðóáêà diffusion ~ òðóáà äèôóç³éíî¿ ïå÷³ oxidation ~ òðóáà (äèôóç³éíî¿) ïå÷³ äëÿ ïðîâåäåííÿ îêñèäóâàííÿ quartz ~ êâàðöîâà òðóáà (äèôóç³éíî¿ ïå÷³) tubing: PTFE ~ òåôëîíîâ³ [ôòîðîïëàñòîâ³] òðóáêè tunneling òóíåëþâàííÿ carrier ~ òóíåëþâàííÿ íîñ³¿â çàðÿäó electron ~ òóíåëþâàííÿ åëåêòðîí³â high-field ~ òóíåëþâàííÿ â ñèëüíîìó (åëåêòðè÷íîìó) ïîë³ Josephson ~ òóíåëþâàííÿ åëåêòðîí³â â äæîçåôñîí³âñüêèõ ïåðåõîäàõ
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uni photon-assisted ~ òóíåëþâàííÿ åëåêòðîí³â ç ôîòîííîþ ñòèìóëÿö³ºþ (â íàäïðîâ³äíèêàõ) quantum-mechanical ~ êâàíòîâî-ìåõàí³÷íå òóíåëþâàííÿ resonant electron ~ ðåçîíàíñíå òóíåëþâàííÿ åëåêòðîí³â superconducting ~ òóíåëþâàííÿ â íàäïðîâ³äíèêó turbopump òóðáîìîëåêóëÿðíèé íàñîñ turnaround öèêë ñòâîðåííÿ ïðèëàäó (÷àñ â³ä ðîçðîáêè ïðèëàäó äî âèïóñêó) turned-off: normally ~ ïðàöþþ÷èé â ðåæèì³ çá³äíåííÿ (ïðî ïîëüîâèé òðàíçèñòîð) turned-on: normally ~ ïðàöþþ÷èé â ðåæèì³ çáàãà÷åííÿ (ïðî ïîëüîâèé òðàíçèñòîð) turn-off âèêëþ÷åííÿ; â³äêëþ÷åííÿ turn-on âêëþ÷åííÿ latchup ~ (ïàðàçèòíå) âêëþ÷åííÿ (ÊÌÎÍ ²Ñ) çà ðàõóíîê åôåêòó çàùèïóâàííÿ subthreshold ~ âêëþ÷åííÿ ïðè íàïðóç³ íèæ÷å ïîðîãîâîãî turntable êîîðäèíàòíèé ñò³ë; ïîâîðîòíèé ñò³ë single-cassette ~ îäíîêàñåòíèé ïîâîðîòíèé ñò³ë turret êîëîíêà objective ~ êîëîíêà ç îá’ºêòèâàìè (ì³êðîñêîïà) tweezer: vacuum ~ âàêóóìíèé ï³íöåò; âàêóóìíèé çàõîïëåííÿ twin äâ³éíèê | äâ³éíèêóâàòèñÿ crystal ~ äâ³éíèê twinning äâ³éíèêóâàííÿ, óòâîðåííÿ äâ³éíèê³â electrical ~ åëåêòðè÷íå äâ³éíèêóâàííÿ optical ~ îïòè÷íå äâ³éíèêóâàííÿ type: channel ~ òèï åëåêòðîïðîâ³äíîñò³ êàíàëó (ïîëüîâîãî òðàíçèñòîðà) conduction ~ òèï åëåêòðîïðîâ³äíîñò³ conductivity ~ òèï ïèòîìî¿ (åëåêòðè÷íî¿) ïðîâ³äíîñò³ doping ~ òèï ëåãóþ÷î¿ äîì³øêè; òèï äîì³øêîâî¿ åëåêòðîïðîâ³äíîñò³ impurity ~ òèï äîì³øêîâî¿ åëåêòðîïðîâ³äíîñò³; òèï ëåãóþ÷î¿ äîì³øêè part ~ òèïîíîì³íàë; òèï ðàä³îäåòàë³ typer:
wafer ~ ïðèëàä äëÿ âèçíà÷åííÿ òèïó åëåêòðîïðîâ³äíîñò³ íàï³âïðîâ³äíèêîâèõ ïëàñòèí typing: wafer ~ âèçíà÷åííÿ òèïó åëåêòðîïðîâ³äíîñò³ íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè
U ultrafast óëüòðàøâèäêîä³þ÷èé ultrafilter ô³ëüòð íàäòîíêîãî î÷èùåííÿ ultrahigh íàäâèñîêîâàêóóìíèé ultrapurification íàäî÷èùåííÿ ultrascope óëüòðàçâóêîâèé äåôåêòîñêîï (äëÿ âèÿâëåííÿ ì³êðîòð³ùèí) ultraspeed óëüòðàøâèäêîä³þ÷èé ultraviolet óëüòðàô³îëåòîâå [ÓÔ-] âèïðîì³íþâàííÿ deep [far] ~ äàëüíº óëüòðàô³îëåòîâå [äàëüíº ÓÔ-]âèïðîì³íþâàííÿ near ~ áëèæíº óëüòðàô³îëåòîâå [áëèæíº ÓÔ-]âèïðîì³íþâàííÿ uncover ðîçêðèâàòè, â³äêðèâàòè (íàïð. ïîâåðõíþ ï³äêëàäêè); âèäàëÿòè, çí³ìàòè (ìàñêóþ÷èé øàð) undercoat ï³äøàð | ôîðìóâàòè ï³äøàð undercompensation íåäîñòàòíÿ êîìïåíñàö³ÿ undercut 1. ï³äòðàâëåííÿ | ï³äòðàâëÿòè (íàïð. êðåìí³é ï³ä ìàñêóþ÷èì øàðîì) 2. ï³äð³çàòè etch ~ ï³äòðàâëåííÿ isolation ~ ï³äòðàâëåííÿ ³çîëÿö³éíîãî øàðó underdeveloping íåäîïðîÿâëåííÿ, íåäîñòàòíº ïðîÿâëåííÿ underetch 1. ï³äòðàâëåííÿ | ï³äòðàâëÿòè 2. íåäîòðàâëåííÿ | íåäîòðàâëÿòè underlayer ï³äøàð undoped 1. áåçïðèì³ñíèé 2. íåëåãîâàíèé unfailing áåçâ³äìîâíèé uniformity: compositional ~ îäíîð³äí³ñòü (õ³ì³÷íîãî) ñêëàäó doping ~ ð³âíîì³ðí³ñòü ðîçïîä³ëó ëåãóþ÷î¿ äîì³øêè etch ~ ð³âíîì³ðí³ñòü (øâèäêîñò³) òðàâëåííÿ exposure ~ ð³âíîì³ðí³ñòü åêñïîíóâàííÿ run-to-ran ~ â³äòâîðþâàí³ñòü (ïðèëàäó) â³ä ïàðò³¿ äî ïàðò³¿ unit 1. ïðèñòð³é; áëîê; óñòàíîâêà 2. åëåìåíò (²Ñ); êîìïîíåíò; ïðèëàä
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vac arithmetic and logic ~ àðèôìåòè÷íîëîã³÷íèé ïðèñòð³é, ÀËÏ bipolar ~ 1. á³ïîëÿðíèé òðàíçèñòîð 2. á³ïîëÿðíà ²Ñ bus access ~ áëîê äîñòóïó äî øèíè (â ïðîöåñîðíèõ ²Ñ) carrier ~ 1. êàñåòà 2. óòðèìóâà÷; íîñ³é central processing ~ öåíòðàëüíèé ïðîöåñîð control ~ áëîê óïðàâë³ííÿ cut-and-form ~ ïðèñòð³é äëÿ îáð³çàííÿ ³ ôîðìóâàííÿ âèâîä³â desoldering ~ óñòàíîâêà äëÿ äåìîíòàæó êîìïîíåíò³â digital ~ 1. öèôðîâèé ïðèñòð³é 2. öèôðîâà ²Ñ DIP ~ ²Ñ â DIP-êîðïóñ³ discrete ~ äèñêðåòíèé êîìïîíåíò field-replaceable ~ êîìïîíóâàëüíèé âóçîë; ñêëàäàëüíèé âóçîë fume-extraction ~ óñòàíîâêà äëÿ âèäàëåííÿ âîäÿíî¿ ïàðè functional ~ ôóíêö³îíàëüíèé áëîê Gunn(-åffect) ~ ïðèëàä (íà åôåêò³) Ãàííà hybrid ~ ã³áðèäíà ³íòåãðàëüíà ñõåìà, Ã²Ñ individual ~ äèñêðåòíèé êîìïîíåíò integrated circuit ~ 1. ïðèñòð³é íà ²Ñ 2. ³íòåãðàëüíà ñõåìà, ²Ñ interface ~ 1. ïðèñòð³é ñïîëó÷åííÿ (ñïðÿæåííÿ), ³íòåðôåéñ 2. ³íòåðôåéñíà ²Ñ lead-forming ~ ïðèñòð³é äëÿ ôîðìóâàííÿ âèâîä³â êîìïîíåíò³â lead-frame ~ âèâ³äíà ðàìêà lithography ~ óñòàíîâêà ë³òîãðàô³¿ logic ~ 1. ëîã³÷íèé ïðèñòð³é 2. ëîã³÷íà ²Ñ master-slice ~ áàçîâèé ìàòðè÷íèé êðèñòàë, ÁÌÊ memory ~ ïàì’ÿòü; çàïàì’ÿòîâóþ÷èé ïðèñòð³é, ÇÏ microcomputer ~ ì³êðîÅÎÌ nondedicated ~ ïðèëàä çàãàëüíîãî çàñòîñóâàííÿ pilot production ~ äîñë³äíà ïðîìèñëîâà óñòàíîâêà resist dispenser ~ ïðèñòð³é äëÿ äîçóâàííÿ ôîòîðåçèñòà screened ~ ïðèëàä, ùî ïðîéøîâ âèá³ðêîâ³ âèïðîáóâàííÿ SMD assembly ~ óñòàíîâêà ïîâåðõíåâîãî ìîíòàæó
stand-alone ~ 1. àâòîíîìíà óñòàíîâêà 2. àâòîíîìíèé ïðèëàä standby ~ ðåçåðâíèé áëîê supply ~ áëîê æèâëåííÿ vacuum-coating ~ âàêóóìíà óñòàíîâêà äëÿ íàíåñåííÿ ïîêðèòò³â wafer-transfer ~ óñòàíîâêà äëÿ (ì³æîïåðàö³éíîãî) òðàíñïîðòóâàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí unloader ïðèñòð³é äëÿ âèâàíòàæåííÿ unpackaged áåçêîðïóñíèé unprocessed íåîáðîáëåíèé unsoldering äåìîíòàæ; âèäàëåííÿ ïðèïîþ unstable 1. íåñò³éêèé 2. íåñòàá³ëüíèé untreated íåîáðîáëåíèé updating: delayed ~ îíîâëåííÿ ³íôîðìàö³¿ ³ç çàòðèìêîþ up-diffused ðîç³ãíàíèé (ïðî äîì³øêó); ðîçïîä³ëåíèé (ïðî äîì³øêó) up-diffusion: dopant ~ ðîçã³í äîì³øêè (äðóãà ñòàä³ÿ äâîõñòàä³éíî¿ äèôó糿) upgrading óäîñêîíàëåííÿ; ìîäåðí³çàö³ÿ up-integrate ï³äâèùóâàòè ñòóï³íü ³íòåãðàö³¿ upset çá³é; ïîðóøåííÿ uptime 1. ÷àñ ïðèâåäåííÿ â ðîáî÷èé ñòàí (íàïð. óñòàòêóâàííÿ) 2. êîåô³ö³ºíò áåçïåðåðâíî¿ ðîáîòè (íàïð. ëàçåðíîãî êîîðäèíàòîãðàôà) user êîðèñòóâà÷ end ~ êîðèñòóâà÷ àïàðàòóðè novice ~ íåäîñâ³ä÷åíèé êîðèñòóâà÷ utilization: chip ~ âèêîðèñòàííÿ ïëîù³ êðèñòàëà gate ~ ñòóï³íü âèêîðèñòàííÿ ëîã³÷íèõ åëåìåíò³â (â ÁÌÊ)
V vacancy âàêàíñ³ÿ electron ~ ä³ðêà, åëåêòðîííà âàêàíñ³ÿ lattice ~ âàêàíñ³ÿ vacuum âàêóóì hard [high] ~ âèñîêèé âàêóóì oil-free ~ áåçìàñëÿíèé âàêóóì (ñòâîðåíèé áåç çàñòîñóâàííÿ ìàñëÿíèõ äèôóç³éíèõ íàñîñ³â) partial [rough] ~ íèçüêèé âàêóóì ultrahigh ~ íàäâèñîêèé âàêóóì
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ver vacuum-deposit îñàäæóâàòè ó âàêóóì³ vacuum-pump â³äêà÷óâàòè, ñòâîðþâàòè âàêóóì validation: design ~ ïåðåâ³ðêà ïðàâèëüíîñò³ ïðîåêòó Â²Ñ process ~ êîíòðîëü òåõíîëîã³÷íîãî ïðîöåñó test ~ àòåñòàö³ÿ òåñò³â valley 1. äîëèíà 2. êàíàâêà; ïîãëèáëåííÿ conduction-band ~ äîëèíà çîíè åëåêòðîïðîâ³äíîñò³ value (÷èñëîâå) çíà÷åííÿ (ô³çè÷íî¿ âåëè÷èíè) boundary ~ ãðàíè÷íå çíà÷åííÿ component ~ çíà÷åííÿ ïàðàìåòðà (åëåêòðîííîãî) êîìïîíåíòà design ~ ðîçðàõóíêîâå çíà÷åííÿ don’t care ~ äîâ³ëüíå çíà÷åííÿ forced ~ âèìóøåíå çíà÷åííÿ (ñèãíàëó íà ë³í³¿ ²Ñ) ðåak ~ ìàêñèìàëüíå çíà÷åííÿ; àìïë³òóäà rating ~ íîì³íàëüíå çíà÷åííÿ threshold ~ ïîðîãîâå çíà÷åííÿ yield ~ â³äñîòîê âèõîäó ãîäíèõ valve: liquid-crystal light ~ ð³äêîêðèñòàë³÷íèé ñâ³òëîâèé êëàïàí vapor ïàðà; ïàðè impurity ~ ïàðà ëåãóþ÷î¿ äîì³øêè; ïàðî[ãàçî]ïîä³áíà ëåãóþ÷à äîì³øêà vaporization âèïàðîâóâàííÿ; ïàðîóòâîðåííÿ electron-beam ~ 1. åëåêòðîííî-ïðîìåíåâå âèïàðîâóâàííÿ 2. åëåêòðîííî-ïðîìåíåâå íàïèëåííÿ varactor âàðàêòîð abrupt-junction ~ âàðàêòîð ç ð³çêèì ïåðåõîäîì graded-junction ~ âàðàêòîð ç ïëàâíèì ïåðåõîäîì hyperabrupt-junction ~ âàðàêòîð ç íàäð³çêèì ïåðåõîäîì MIS ~ âàðàêòîð ³ç ñòðóêòóðîþ ìåòàë– ä³åëåêòðèê–íàï³âïðîâ³äíèê, ÌÄÏ-âàðàêòîð variability: process-parameter ~ êîëèâàííÿ ïàðàìåòð³â (òåõíîëîã³÷íîãî) ïðîöåñó variance äèñïåðñ³ÿ (íàïð. âèõ³äíèõ äàíèõ) variation: across-wafer ~ çì³íà âëàñòèâîñòåé ìàòåð³àëó ïî ä³àìåòðó íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè
run-to-run ~ çì³íà õàðàêòåðèñòèê (ïðèëàäó) â³ä ïàðò³¿ äî ïàðò³¿ within-run (process) ~ ðîçêèä ïàðàìåòð³â ïðîöåñó â ìåæàõ îäí³º¿ ïàðò³¿ âèðîá³â vector âåêòîð activity ~ âåêòîð àêòèâíîñò³ (â D-àëãîðèòì³) Burgers ~ âåêòîð Áþðãåðñà, âåêòîð çì³ùåííÿ displacement ~ âåêòîð åëåêòðè÷íîãî çì³ùåííÿ test ~s âåêòîðè òåñòîâèõ ïîñë³äîâíîñòåé vehicle 1. ðîç÷èííèê; ðàçáàâèòåëü 2. íîñ³é (íàïð. êðèñòàë³â) technology characterization ~ çàñ³á äëÿ êîíòðîëþ òåõíîëîã³÷íîãî ïðîöåñó velocity øâèäê³ñòü drift ~ øâèäê³ñòü äðåéôó Fermi ~ øâèäê³ñòü Ôåðì³ recombination ~ øâèäê³ñòü ðåêîìá³íàö³¿ scanning ~ øâèäê³ñòü ñêàíóâàííÿ vendor: CAE tool ~ ïîñòà÷àëüíèê ³íñòðóìåíòàëüíèõ çàñîá³â àâòîìàòèçîâàíîãî êîíñòðóþâàííÿ workstation ~ ïîñòà÷àëüíèê ðîáî÷èõ ñòàíö³é verification âåðèô³êàö³ÿ, ï³äòâåðäæåííÿ ïðàâèëüíîñò³ automatic design ~ àâòîìàòè÷íà âåðèô³êàö³ÿ ïðîåêòó (²Ñ) circuit-level ~ âåðèô³êàö³ÿ ²Ñ íà òåõí³÷íîìó ð³âí³ design ~ âåðèô³êàö³ÿ ïðîåêòó ²Ñ (íà ð³çíèõ åòàïàõ ïðîåêòóâàííÿ) design rules ~ âåðèô³êàö³ÿ ïðîåêòó ²Ñ íà äîòðèìàííÿ ïðîåêòíèõ íîðì electrical rule ~ âåðèô³êàö³ÿ íà åëåêòðè÷íîìó ð³âí³ functional ~ ôóíêö³îíàëüíà âåðèô³êàö³ÿ layout ~ âåðèô³êàö³ÿ òîïîëî㳿 logic ~ âåðèô³êàö³ÿ ïðîåêòó ²Ñ íà ëîã³÷íîìó ð³âí³ test ~ âåðèô³êàö³ÿ òåñòó timing ~ òèì÷àñîâà âåðèô³êàö³ÿ verifier âåðèô³êàòîð, ïðîãðàìà ïåðåâ³ðêè (²Ñ) logic ~ ëîã³÷íèé âåðèô³êàòîð timing ~ ÷àñîâèé âåðèô³êàòîð version âàð³àíò discrete ~ âàð³àíò (ðåàë³çàö³¿ ñõåìè) íà äèñêðåòíèõ êîìïîíåíòàõ
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vol hybrid ~ ã³áðèäíèé âàð³àíò, âàð³àíò (ðåàë³çàö³¿ ñõåìè) ó âèãëÿä³ Ã²Ñ monolithic ~ âàð³àíò (ðåàë³çàö³¿ ñõåìè) ó âèãëÿä³ íàï³âïðîâ³äíèêîâî¿ ²Ñ SMD ~ (êîíñòðóêòèâíèé) âàð³àíò (ïðèëàäó) äëÿ ïîâåðõíåâîãî ìîíòàæó updated ~ âäîñêîíàëåíèé âàð³àíò vessel: Dewar ~ ïîñóäèíà Äüþàðà evacuated ~ âàêóóìíèé ðåçåðâóàð; âàêóóìíà êàìåðà quartz ~ êâàðöîâà ïîñóäèíà; êâàðöîâà àìïóëà reaction ~ ðåçåðâóàð äëÿ ïðîâåäåííÿ õ³ì³÷íî¿ ðåàêö³¿, ðåàêö³éíèé ðåçåðâóàð via 1. íàñíàñêð³çíèé îòâ³ð (â äðóêîâàí³é ïëàò³) 2. íàñêð³çíà îáëàñòü contact ~ íàñêð³çíèé îòâ³ð äëÿ êîíòàêòó fixed ~ âåðòèêàëüíà ñèãíàëüíà øèíà, ùî ïðîõîäèòü ÷åðåç âñ³ øàðè ìåòàë³çàö³¿ ³ ñòâîðþºòüñÿ äëÿ âñ³õ ñõåì (êîíñòðóêòèâíî âèêîíóºòüñÿ ó âèãëÿä³ ä³ðêè) floating ~ ïðîâ³äíèé îòâ³ð (âèçíà÷àºòüñÿ ïðè ïðîåêòóâàíí³ êîíêðåòíî¿ òîïîëî㳿) tapered ~ îòâ³ð ç êîíóñíèìè á³÷íèìè ñò³íêàìè vibration 1. â³áðàö³ÿ 2. êîëèâàííÿ lattice ~ êîëèâàííÿ êðèñòàë³÷íèõ ãðàòîê viewing: placement ~ â³çóàëüíèé êîíòðîëü (îïåðàö³¿) ïîçèö³îíóâàííÿ viewpoint vacuum ~ îãëÿäîâå â³êíî âàêóóìíî¿ óñòàíîâêè viscidity 1. â’ÿçê³ñòü 2. êëåéê³ñòü viscometer â³ñêîçèìåòð viscosity 1. â’ÿçê³ñòü 2. êîåô³ö³ºíò â’ÿçêîñò³ visual 1. â³çóàëüíèé êîíòðîëü 2. â³çóàëüíèé process control ~ ï³ñëÿîïåðàö³éíèé â³çóàëüíèé êîíòðîëü X-ray ~ â³çóàëüíèé êîíòðîëü ç âèêîðèñòàííÿì ðåíòãåí³âñüêîãî âèïðîì³íþâàííÿ vitreosil ïëàâëåíèé êâàðö vitrification îñêëîâûâàíèå VLSI: externally programmed ~ ïåðåïðîãðàìîâóâàíà ÍÂ²Ñ standard ñåll ~ ÍÂ²Ñ íà îñíîâ³ ñòàíäàðòíèõ êîì³ðîê
void: interdiffusion ~s ì³æäèôóçí³ ïóñòîòè volatile 1. ëåòó÷èé 2. åíåðãîçàëåæíèé (ïðî ÇÏ) volatility ëåòó÷³ñòü volatization âèäàëåííÿ ëåòó÷èõ ç’ºäíàíü voltage íàïðóãà, ð³çíèöÿ ïîòåíö³àë³â ac ~ çì³ííà íàïðóãà applied ~ ïðèêëàäåíà íàïðóãà avalanche breakdown ~ íàïðóãà ëàâèííîãî ïðîáîþ barrier ~ íàïðóãà â³äìèêàííÿ ð–n-ïåðåõîäó base ~ íàïðóãà áàçè, áàçîâà íàïðóãà bias ~ íàïðóãà çì³ùåííÿ blocking ~ çàïèðàþ÷à íàïðóãó collector-base ~ íàïðóãà ïåðåõîäó êîëåêòîðà collector-substrate ~ íàïðóãà ïðîáîþ ïåðåõîäó êîëåêòîð–ï³äêëàäêà contact ~ êîíòàêòíà ð³çíèöÿ ïîòåíö³àë³â control ~ êåðóþ÷à íàïðóãà cutoff ~ íàïðóãà â³äñ³÷êè dc ~ ïîñò³éíà íàïðóãà dielectric breakdown ~ íàïðóãà ïðîáîþ ä³åëåêòðèêà disruptive ~ íàïðóãà ïðîáîþ, ïðîáèâíà íàïðóãà driving ~ 1. íàïðóãà çàïóñêàþ÷îãî ñèãíàëó 2. íàïðóãà çáóäæåííÿ emitter-base ~ íàïðóãà åì³òåðíîãî ïåðåõîäó field-inversion ~ íàïðóãà, ùî âèêëèêຠ³íâåðñ³þ åëåêòðè÷íîãî ïîëÿ forward ~ ïðÿìà íàïðóãà Hall ~ íàïðóãà Õîëëà impressed ~ ïðèêëàäåíà íàïðóãà inverse ~ çâîðîòíà íàïðóãà junction ~ íàïðóãà íà ïåðåõîä³ logical one ~ íàïðóãà ëîã³÷íî¿ «1» logical zero ~ íàïðóãà ëîã³÷íîãî «0» Lorentz ~ íàïðóãà Ëîðåíöà offset ~ âõ³äíà íàïðóãà çì³ùåííÿ íóëÿ, íàïðóãà çì³ùåííÿ (îïåðàö³éíîãî ï³äñèëþâà÷à) operating ~ ðîáî÷à íàïðóãà pinch-off ~ íàïðóãà â³äñ³÷åííÿ (ïîëüîâîãî òðàíçèñòîðà) punched-through ~ íàïðóãà ïðîêîëó áàçè, íàïðóãà ñòóëåííÿ reference ~ îïîðíà íàïðóãà reverse ~ çâîðîòíà (îáåðíåíà) íàïðóãà reverse-breakdown ~ íàïðóãà çâîðîòíîãî (îáåðíåíîãî) ïðîáîþ
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waf rupture ~ íàïðóãà ïðîáîþ saturation ~ íàïðóãà íàñè÷åííÿ source ~ 1. íàïðóãà âèòîêó (ïîëüîâîãî òðàíçèñòîðà) 2. íàïðóãà æèâëåííÿ supply ~ íàïðóãà æèâëåííÿ threshold ~ ïîðîãîâà íàïðóãà turn-off ~ íàïðóãà âèêëþ÷åííÿ turn-on ~ íàïðóãà âêëþ÷åííÿ voltage-controlled êåðîâàíèé íàïðóãîþ
W wafer 1. íàï³âïðîâ³äíèêîâà ïëàñòèíà 2. ïëàñòèíà; ïëàòà; ï³äêëàäêà bipolar ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç á³ïîëÿðíèìè ³íòåãðàëüíèìè ñòðóêòóðàìè building-block ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç ñôîðìîâàíèìè êîíñòðóêòèâíèìè áëîêàìè bumped ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç ³íòåãðàëüíèìè ñòðóêòóðàìè, ùî ìàþòü ñòîâï÷èêîâ³ âèâîäè chem-mesh polished ~ ïëàñòèíà, ï³ääàíà õ³ì³êî-ìåõàí³÷í³é ïîë³ðîâö³ composite ~ áàãàòîøàðîâà íàï³âïðîâ³äíèêîâà ïëàñòèíà; íàï³âïðîâ³äíèêîâà ïëàñòèíà ç äåê³ëüêîìà åï³òàêñ³àëüíèìè øàðàìè customed ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç áàçîâèìè ìàòðè÷íèìè êðèñòàëàìè device ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç ñôîðìîâàíèìè ïðèëàäàìè enhanced gettered ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç ïîñèëåíèì ãåòåðóâàííÿì epitaxial ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç åï³òàêñ³àëüíèì øàðîì etch-separated ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà, ùî ðîçä³ëÿºòüñÿ íà êðèñòàëè ìåòîäîì òðàâëåííÿ flat ~ ïëàñòèíà ç ïëîñêîïàðàëåëüíèìè ïîâåðõíÿìè foundry ~ çàìîâëåíà íàï³âïðîâ³äíèêîâà ïëàñòèíà frame-mounted (semiconductor) ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà, çàêð³ïëåíà â ðàìö³ grown-junction ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç âèðîùåíèì ð-n-ïåðåõîäîì heavily strained ~ ïëàñòèíà ç ñèëüíèìè ìåõàí³÷íèìè íàïðóãàìè
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IC ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç ³íòåãðàëüíèìè ñòðóêòóðàìè imperfect ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç äåôåêòàìè in-process ~ îáðîáëþâàíà íàï³âïðîâ³äíèêîâà ïëàñòèíà low yielding ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç íèçüêèì âèõîäîì ãîäíèõ êðèñòàë³â LSI ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç Â²Ñ master-slice ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç áàçîâèìè ìàòðè÷íèìè êðèñòàëàìè mixed crystal ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ³ç çì³øàíîãî òâåðäîãî ðîç÷èíó MOS ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç ÌÎÍñòðóêòóðàìè multichip [multi-product] ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç êðèñòàëàìè ²Ñ ð³çíèõ òèï³â optically flat ~ îïòè÷íî ïëîñêà ïëàñòèíà planar ~ ïëàñòèíà ç ïëîñêîïàðàëåëüíèìè ïîâåðõíÿìè p-n ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç ð-nïåðåõîäàìè prediffused ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç âèãîòîâëåíèìè äèôóç³éíèìè ñòðóêòóðàìè; íàï³âïðîâ³äíèêîâà ïëàñòèíà ç áàçîâèìè ìàòðè÷íèìè êðèñòàëàìè process development ~ òåñòîâà ïëàñòèíà, ÿêà çàñòîñîâóºòüñÿ ïðè ðîçðîáö³ òåõíîëîã³÷íîãî ïðîöåñó processed ~ òåñòîâà ïëàñòèíà äëÿ ïåðåâ³ðêè ÿêîñò³ òåõíîëîã³÷íîãî ïðîöåñó process validation ~ ïëàñòèíà, ï³ääàíà (òåõíîëîã³÷íî¿) îáðîáö³ production ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà äëÿ ïðîìèñëîâîãî âèðîáíèöòâà ²Ñ raw ~ íåîáðîáëåíà ïëàñòèíà resist-coated ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç øàðîì ðåçèñòà sample ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà äëÿ âèá³ðêîâèõ âèïðîáóâàíü; òåñòîâà ïëàñòèíà sapphire ~ ñàïô³ðîâà ïëàñòèíà saw-scribed ~ ïëàñòèíà, ùî ðîçä³ëÿºòüñÿ íà êðèñòàëè ìåòîäîì ðîçïèëþâàííÿ scribed ~ ñêðàéáîâàíà ïëàñòèíà SOS ~ ïëàñòèíà ç ñàïô³ðà ç øàðîì êðåìí³þ spin-dry ~ ïëàñòèíà ï³ñëÿ ñóøêè íà öåíòðèôóç³
wel substrate ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ÿê ï³äêëàäêà (íàïð. äëÿ âèðîùóâàííÿ åï³òàêñ³àëüíîãî øàðó) uncommitted ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç áàçîâèìè ìàòðè÷íèìè êðèñòàëàìè vapor-phase epitaxial ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà ç åï³òàêñ³àëüíèì øàðîì, âèðîùåíèì ç ãàçîâî¿ ôàçè (100) ~ íàï³âïðîâ³äíèêîâà ïëàñòèíà, îð³ºíòîâàíà â êðèñòàëîãðàô³÷í³é ïëîùèí³ (100) wafering ð³çàííÿ íàï³âïðîâ³äíèêîâèõ çëèòê³â íà ïëàñòèíè Wafertrac ô³ðì. àâòîìàòèçîâàíà ñèñòåìà îáðîáêè íàï³âïðîâ³äíèêîâèõ ïëàñòèí, êåðîâàíà ì³êðîïðîöåñîðîì wall 1. äîìåííà ìåæà, äîìåííà ñò³íêà 2. ñò³íêà (íàïð. îòâîðè) tapered ~ êîíóñíà ñò³íêà (îòâîðè) wand: vacuum ~ âàêóóìíå ñõîïëåííÿ warpage âèêðèâëåííÿ; âèãèí (íàïð. íàï³âïðîâ³äíèêîâî¿ ïëàñòèíè) wash ïðîìèâêà; â³äìèâàííÿ | ïðîìèâàòè; â³äìèâàòè washer óñòàíîâêà äëÿ ïðîìèâêè; óñòàíîâêà äëÿ â³äìèâàííÿ aqueous ~ óñòàíîâêà äëÿ ïðîìèâêè ó âîä³ àáî âîäíèõ ðîç÷èíàõ conveyorized ~ êîíâåéºðíà óñòàíîâêà äëÿ ïðîìèâêè water âîäà bacteria-free ~ âîäà, îá÷èùåíà â³ä ì³êðîîðãàí³çì³â deionized ~ äå³îí³çîâàíà âîäà demineralized ~ äåì³íåðàë³çîâàíà âîäà; äå³îí³çîâàíà âîäà distilled ~ äèñòèëüîâàíà âîäà electronic-grade ~ âîäà, â³äïîâ³äíà âèìîãàì åëåêòðîííî¿ ïðîìèñëîâîñò³ microelectronics-grade ~ âîäà äëÿ ì³êðîåëåêòðîííî¿ ïðîìèñëîâîñò³ waste ~ ñò³÷íà âîäà waterproof, watertight âîäîíåïðîíèêíèé wave õâèëÿ acoustic ~ àêóñòè÷íà õâèëÿ bulk ~ îá’ºìíà õâèëÿ lattice ~ õâèëÿ êîëèâàíü êðèñòàë³÷íèõ ãðàòîê
magnetoelectric surface ~ ìàãí³òîåëåêòðè÷íà ïîâåðõíåâà õâèëÿ magnetostatic ~ ìàãí³òîñòàòè÷íà õâèëÿ surface àñoustic ~s ïîâåðõíåâ³ àêóñòè÷í³ õâèë³, ÏÀÕ surface plasma ~ ïîâåðõíåâà ïëàçìîâà õâèëÿ ultrasonic ~s óëüòðàçâóêîâ³ õâèë³ waveguide: fiber ~ âîëîêîííèé ñâ³òëîâ³ä liquid-crystal ~ ð³äêîêðèñòàë³÷íèé õâèëåâ³ä optical ~ ñâ³òëîâ³ä, îïòè÷íèé õâèëåâ³ä superlattice ~ õâèëåâ³ä íà íàäãðàòö³ wavelength äîâæèíà õâèë³ printing ~ äîâæèíà õâèë³ åêñïîíóþ÷îãî âèïðîì³íþâàííÿ (â ë³òîãðàô³¿) waxing íàíåñåííÿ âîñêó; çàêð³ïëåííÿ âîñêîì weak-link ñëàáêà ïåðåìè÷êà (ì³æ íàäïðîâ³äíèìè øàðàìè) weakly-doped ñëàáîëåãîâàíèé wear çíîñ | çíîøóâàòè weld 1. çâàðêà, çâàðþâàííÿ ] çâàðþâàòè (äèâ. ò-æ bonding, welding) 2. çâàðíå ç’ºäíàííÿ; çâàðíèé øîâ parallel-gap ~ çâàðêà ðîçùåïëåíèì åëåêòðîäîì parallel seam ~ ïàðàëåëüíà ðîëèêîâà çâàðêà (äëÿ ïðèêð³ïëåííÿ êðèøêè êîðïóñó) split-tip ~ çâàðêà ðîçùåïëåíèì åëåêòðîäîì welder çâàðþâàëüíèé âåðñòàò; óñòàíîâêà çâàðêè fusion ~ óñòàíîâêà çâàðêè ïëàâëåííÿì ultrasonic ~ âåðñòàò óëüòðàçâóêîâî¿ çâàðêè welding çâàðêà, çâàðþâàííÿ (äèâ. ò-æ bonding, weld) arc ~ äóãîâà çâàðêà butt ~ çâàðêà âñòûê cold ~ õîëîäíà çâàðêà diffused ~ äèôóç³éíà çâàðêà electron-beam ~ åëåêòðîííî-ïðîìåíåâà çâàðêà laser ~ ëàçåðíà çâàðêà one-at-à-time ~ ïîñë³äîâíà çâàðêà â³ä òî÷êè äî òî÷êè (íàïð. òåðìîêîìïðåñ³éíà çâàðêà âèâîä³â) resistance ~ çâàðêà åëåêòðîîïîîì seam ~ ðîëèêîâà çâàðêà spot ~ òî÷êîâà çâàðêà stitch ~ çâàðêà «çøèâàííÿì», ñòåæêîâàÿ çâàðêà
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wir ultrasonic ring ~ óëüòðàçâóêîâà ê³ëüöåâà çâàðêà well 1. êèøåíÿ (äëÿ ôîðìóâàííÿ åëåìåíò³â ²Ñ) 2. ïîòåíö³àëüíà ÿìà charge splitter ~ ïîòåíö³àëüíà ÿìà äëÿ ðîçä³ëåííÿ çàðÿä³â charge storage ~ ïîòåíö³àëüíà ÿìà äëÿ íàêîïè÷åííÿ çàðÿä³â CMOS ~ êèøåíÿ äëÿ ôîðìóâàííÿ ÊÌÎÍñòðóêòóðè epitaxially refilled ~ êèøåíÿ, çàïîâíåíà åï³òàêñ³àëüíèì (íàï³âïðîâ³äíèêîâèì) ìàòåð³àëîì n + isolated p ~ ð-êèøåíÿ, ³çîëüîâàíà íàï³âïðîâ³äíèêîì n-òèïó potential ~ ïîòåíö³àëüíà ÿìà p-type ~ êèøåíÿ (ç åëåêòðîïðîâ³äí³ñòþ) ðòèïó quantum ~ êâàíòîâà ÿìà zero-dimensional quantum ~ ïîòåíö³àëüíà ÿìà êâàç³íóëüîâî¿ ðîçì³ðíîñò³ wettability çìî÷óâàí³ñòü wetting çìî÷óâàííÿ (íàïð. ïðèïîºì ïðè ïàÿíí³) wheel 1. äèñê 2. êðóã diamond ~ äèñê ç àëìàçíîþ ð³æó÷îþ êðîìêîþ dicing ~ äèñê äëÿ ð³çàííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí íà êðèñòàëè grinding ~ øë³ôóâàëüíèé êðóã whisker 1. íèòêîïîä³áíèé êðèñòàë, âóñ 2. òî÷êîâèé âîëîñîê, êîíòàêòíà ïðóæèíà (òî÷êîâîãî ä³îäà) wicking: solder ~ (íåáàæàíå) ïðîíèêíåííÿ ïðèïîþ width 1. øèðèíà 2. òðèâàë³ñòü (³ìïóëüñó) depletion ~ øèðèíà çá³äíåíî¿ îáëàñò³ fine-line ~ ìàëà øèðèíà ë³í³¿ (åëåìåíòó ²Ñ) forbidden-band ~ øèðèíà çàáîðîíåíî¿ (åíåðãåòè÷íî¿) çîíè highway ~ øèðèíà ìàã³ñòðàëüíî¿ øèíè pattern line ~ øèðèíà ë³í³¿ ì³êðîñòðóêòóðè pulse ~ òðèâàë³ñòü ³ìïóëüñó submicron channel ~ ñóáì³êðîííà øèðèíà êàíàëó tape ~ øèðèíà ñòð³÷êîâîãî íîñ³ÿ window â³êíî, îòâ³ð (â ìàñêóþ÷îìó øàð³) base contact ~ êîíòàêòíå â³êíî äî áàçîâî¿ îáëàñò³
base diffusion ~ â³êíî äëÿ ïðîâåäåííÿ áàçîâî¿ äèôó糿 collector contact ~ êîíòàêòíå â³êíî äî êîëåêòîðà contact ~ êîíòàêòíå â³êíî doping mask ~ â³êíî â ìàñö³ äëÿ ïðîâåäåííÿ äèôó糿 emitter contact ~ êîíòàêòíå â³êíî äî åì³òåðà gate ~ â³êíî äî çàòâîðà isolation-diffusion ~ â³êíî äëÿ ïðîâåäåííÿ ³çîëþþ÷î¿ äèôó糿 n-p-n base ~ â³êíî äî áàçîâî¿ îáëàñò³ n–ð– n-òðàíçèñòîðà oxide ~ â³êíî â øàð³ îêñèäó p-n-p base ~ â³êíî äî áàçîâî¿ îáëàñò³ ð–n– ð-òðàíçèñòîðà reach-through ~ íàñêð³çíå â³êíî (íàïð. äî îáëàñò³ êîëåêòîðà) via ~ íàñêð³çíå â³êíî (â áàãàòîøàðîâ³é äðóêîâàí³é ïëàò³) write-erase ~ â³êíî (â êîðïóñ³ ÇÏ) äëÿ çàïèñó ³ ñòèðàííÿ äàíèõ. wire 1. äð³ò; ïðîâ³äíèê; øèíà 2. äð³ò; (äðîòÿíå) ç’ºäíàííÿ | ôîðìóâàòè (äðîòÿí³) ç’ºäíàííÿ; ôîðìóâàòè ðîçâîäêó 3. âìîíòîâóâàòè address ~ àäðåñíà øèíà bit ~ ðîçðÿäíà øèíà bonding ~ äðîòÿíèé âèâ³ä, ïðèºäíàíèé ìåòîäîì òåðìîêîìïðåñ³¿ connected ~s 1. ñïîëó÷í³ òðàñè 2. äðîòÿí³ ç’ºäíàííÿ jumper ~ íàâ³ñíèé äðîòÿíèé âèâ³ä lead ~ äðîòÿíèé âèâ³ä overflow ~s ïëàâàþ÷³ ç’ºäíàííÿ quantum ~ êâàíòîâå ïðîâ³äíèê (íàäòîíêèé äð³ò ç àðñåí³äó ãàë³þ) tinned ~ ëóäæåíèé äð³ò wrapped ~ äð³ò äëÿ ìîíòàæó ìåòîäîì íàêðóòêè wireability çä³áí³ñòü äî ôîðìóâàííÿ (äðîòÿíèõ) ç’ºäíàíü wire-ORing îá’ºäíàííÿ ëîã³÷íèõ åëåìåíò³â äëÿ âèêîíàííÿ îïåðàö³¿ ÀÁÎ wiring 1. ðîçâîäêà; (äðîòÿí³) ç’ºäíàííÿ 2. ôîðìóâàííÿ (äðîòÿíèõ) ç’ºäíàíü; ôîðìóâàííÿ ðîçâîäêè 3. ìîíòàæ 4. òðàñóâàííÿ automatic ~ 1. àâòîìàòè÷íèé ìîíòàæ 2. àâòîìàòè÷íå òðàñóâàííÿ, àâòîòðàñóâàííÿ
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yie custom ~ çàìîâëåíà ðîçâîäêà dense ~ ðîçâîäêà âèñîêî¿ ãóñòèíè discrete ~ 1. ìîíòàæ äèñêðåòíèõ êîìïîíåíò³â 2. äèñêðåòíèé ìîíòàæ; ïîñë³äîâíèé ìîíòàæ â³ä òî÷êè äî òî÷êè discretionary ~ âèá³ðêîâà ðîçâîäêà; âèáîð÷³ ç’ºäíàííÿ fixed ~ ô³êñîâàíà [æîðñòêà] ðîçâîäêà high-density ~ ðîçâîäêà âèñîêî¿ ãóñòèíè interconnection ~ ðîçâîäêà; ì³æç’ºäíàííÿ internal ~ âíóòð³øíº òðàñóâàííÿ leading-out ~ ç’ºäíàííÿ ì³æ âíóòð³øí³ìè ³ çîâí³øí³ìè âèâîäàìè (êîðïóñè ²Ñ) • logic chip ~ ðîçâîäêà íà êðèñòàë³ ëîã³÷íî¿ ²Ñ loose ~ ãðóáå òðàñóâàííÿ master-slice chip ~ ðîçâîäêà áàçîâîãî ìàòðè÷íîãî êðèñòàëà multilayer ~ 1. áàãàòîð³âíåâà ðîçâîäêà; áàãàòîð³âíåâ³ ç’ºäíàííÿ 2. áàãàòîøàðîâèé ìîíòàæ multilevel ~ áàãàòîð³âíåâà ðîçâîäêà; áàãàòîð³âíåâ³ ç’ºäíàííÿ path-routed ~ 1. ðîçâîäêà ïî òðàñàõ 2. ìîíòàæ ç’ºäíàíü ïî òðàñàõ point-to-point ~ 1. ç’ºäíàííÿ ì³æ êîíòàêòàìè 2. ïîñë³äîâíèé ìîíòàæ â³ä òî÷êè äî òî÷êè printed ~ 1. äðóêîâàíà ðîçâîäêà; äðóêîâàí³ ç’ºäíàííÿ 2. äðóêàðñüêèé ìîíòàæ solderless ~ áåçñïàéíèé ìîíòàæ thick-film ~ òîâñòîïë³âêîâà ðîçâîäêà; òîâñòîïë³âêîâ³ ç’ºäíàííÿ thin-film ~ òîíêîïë³âêîâà ðîçâîäêà; òîíêîïë³âêîâ³ ç’ºäíàííÿ three-dimensional ~ òðèâèì³ðíà ðîçâîäêà work: cold ~ õîëîäíà îáðîáêà development ~ ðîçðîáêà; ïðîåêòóâàííÿ fine ~ ïðåöèç³éíà îáðîáêà hot ~ òåðì³÷íà îáðîáêà, òåðìîîáðîáêà workability òåõíîëîã³÷í³ñòü; îáðîáëþâàíà workholder óòðèìóâà÷ (íàïð. äåòàë³) workstation ðîáî÷å ì³ñöå CAD ~ àâòîìàòèçîâàíå ðîáî÷å ì³ñöå [ÀÐÌ] ïðîåêòóâàëüíèêà high-function graphic ~ àâòîìàòèçîâàíå ðîáî÷å ì³ñöå [ÀÐÌ] ç áàãàòîôóíêö³îíàëüíèì ãðàô³÷íèì òåðì³íàëîì
worst-case ÿêíàéã³ðøèé âèïàäîê wrap íàêðóòêà, ç’ºäíàííÿ íàêðóòêîþ | ñïîëó÷àòè íàêðóòêîþ writer óñòàíîâêà äëÿ (ïîñë³äîâíîãî êðîêîâîãî) ôîðìóâàííÿ ìàëþíêà electron-beam pattern ~ åëåêòðîííîïðîìåíåâà óñòàíîâêà äëÿ ôîðìóâàííÿ ìàëþíêà pattern ~ óñòàíîâêà äëÿ ôîðìóâàííÿ ìàëþíêà writing 1. ôîðìóâàííÿ ìàëþíêà 2. çàïèñ direct ~ áåçïîñåðåäíº ôîðìóâàííÿ ìàëþíêà electron-beam slice ~ åëåêòðîííî-ïðîìåíåâå ôîðìóâàííÿ ìàëþíêà íà íàï³âïðîâ³äíèêîâ³é ïëàñòèí³ ion-beam ~ ³îííî-ïðîìåíåâå ôîðìóâàííÿ ìàëþíêà serial ~ ïîñë³äîâíå ôîðìóâàííÿ ìàëþíêà
X xenon Êñåíîí, Xe X-ray ðåíòãåí³âñüêå âèïðîì³íþâàííÿ hard ~ æîðñòêå ðåíòãåí³âñüêå âèïðîì³íþâàííÿ soft ~ ì’ÿêå ðåíòãåí³âñüêå âèïðîì³íþâàííÿ SOR [synchrotron] ~ ðåíòãåí³âñüêå âèïðîì³íþâàííÿ â ñèíõðîòðîí³
Y yield 1. âèõ³ä ãîäíèõ 2. âèõ³ä; â³ääà÷à bonding ~ âèõ³ä ãîäíèõ íà îïåðàö³¿ òåðìîêîìïðåñ³éíî¿ çâàðêè chip ~ âèõ³ä ãîäíèõ êðèñòàë³â (²Ñ) chip-separation ~ âèõ³ä ãîäíèõ íà îïåðàö³¿ ðîçä³ëåííÿ íàï³âïðîâ³äíèêîâèõ ïëàñòèí íà êðèñòàëè circuit ~ âèõ³ä ãîäíèõ ñõåì design ~ êîíñòðóêòîðñüêèé âèõ³ä (áåç ìîæëèâîñò³, ïåðåðîáêè ³ âíåñåííÿ çì³í) dice ~ âèõ³ä ãîäíèõ êðèñòàë³â (íà ïëàñòèí³) isodefect ~ (ñåðåäí³é) âèõ³ä ãîäíèõ êðèñòàë³â ïðè îäíàêîâîìó ð³âí³ äåôåêòíîñò³ (ïîêàçíèê ÿêîñò³ âèðîáíèöòâà ²Ñ) ðårcentage ~ â³äñîòîê âèõîäó ãîäíèõ
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zon per-slice ~ âèõ³ä ãîäíèõ êðèñòàë³â íà ïëàñòèí³ probe ~ âèõ³ä ãîäíèõ íà îïåðàö³¿ çîíäîâèõ âèïðîáóâàíü screening ~ âèõ³ä ãîäíèõ íà îïåðàö³¿ â³äáðàêóâàííÿ; âèõ³ä ãîäíèõ íà îïåðàö³¿ âèá³ðêîâèõ âèïðîáóâàíü slice ~ âèõ³ä ãîäíèõ íàï³âïðîâ³äíèêîâèõ ïëàñòèí wafer ~ 1. âèõ³ä ãîäíèõ íàï³âïðîâ³äíèêîâèõ ïëàñòèí 2. âèõ³ä ãîäíèõ êðèñòàë³â íà ïëàñòèí³ “yo-yo” óñòàíîâêà òåðìîöèêëèðîâàíèÿ (òåðìîöèêëþâàííÿ) ²Ñ
Z zapper: laser ~ óñòàíîâêà ëàçåðíî¿ ï³äãîíêè (ðåçèñòîð³â) zapping 1. ïðîãðàìóâàííÿ ïåðåïàëîì ïåðåìè÷îê (íàïð. ÏËÌ) 2. ï³äãîíêà (íàïð. ðåçèñòîð³â) ç âèêîðèñòàííÿì ëàçåðíîãî àáî åëåêòðîííîãî ïðîìåíÿ Zener ~ ï³äãîíêà (ðåçèñòîð³â) ç âèêîðèñòàííÿì ñòàá³ë³òðîí³â Zener ñòàá³ë³òðîí
DLT ~ ä³îäíî-òðàíçèñòîðí³ ëîã³÷í³ ñõåìè ³ç ñòàá³ë³òðîíàìè zero: logical ~ ëîã³÷íèé íóëü zero-encroachment â³äñóòí³ñòü òðàâëåííÿ â ãîðèçîíòàëüíîìó íàïðÿì³, â³äñóòí³ñòü ï³äòðàâëåííÿ zirconate: barium strontium ~ öèðêîíàò áàð³þ ³ ñòðîíö³þ (ìàòåð³àë äëÿ ô³ëüòð³â íà ÏÀÕ) zone çîíà; îáëàñòü avalanche ~ çîíà ëàâèííîãî ïðîáîþ; çîíà ëàâèííîãî ìíîæåííÿ Brillouin ~ çîíà Áð³ëëþåíà buried ~ ïðèõîâàíà îáëàñòü; çàãëèáëåíà îáëàñòü channel ~ êàíàëüíà îáëàñòü, êàíàë defect-free ~ áåçäåôåêòíà çîíà denuded ~ îáëàñòü áåç çàõèñíîãî øàðó diffusion ~ äèôóç³éíà îáëàñòü doped ~ ëåãîâàíà îáëàñòü float ~ ïëàâàþ÷à îáëàñòü injection ~ ³íæåêö³éíà îáëàñòü, ³íæåêòîð localized ~ ëîêàëüíà çîíà nondefective ~ áåçäåôåêòíà çîíà strip-shaped ~ ñìóæêîâà ä³ëÿíêà terminal ~ êîíòàêòíèé ìàéäàí÷èê
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